A/Prof Jennifer Wong-Leung

Department	Electronic Materials Engineering
Research group	Semiconductor optoelectronics and nanotechnology group
Qualifications	BSc Hons Physics Bristol, PhD ANU
Office phone	(02) 612 50360
Email
Webpage	https://scholar.google.com.au/citat...

Publications

Book chapter

Williams J, Wong-Leung J
Voids and Nanocavities in Silicon
Topics in Applied Physics 116: Materials Science with Ion Beams
Springer, Berlin (2010) 113-146

(1 publications)

Journal article

Li Z, Azimi Z, Li Z, Yu Y, Tan H, Jin W, Jagadish C, Wong-Leung J, Fu L
InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection
Nanoscale 15, -(2023) 10033 - 10041

Tran T, Wong-Leung J, Smillie L, Hallen A, Grimaldi M, Williams J
High hole mobility and non-localized states in amorphous germanium
APL Materials 11, 4(2023)

Azimi Z, Gopakumar Saraswathyvilasam A, Li L, Kremer F, Lockrey M, Wibowo A, Nguyen H, Tan H, Jagadish C, Wong-Leung J
Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics
Advanced Optical Materials 10, 18(2022) 1-9

Pham H, Weber K, Duong T, Wong-Leung J
Impact of Halide Anions in CsX (X?=?I, Br, Cl) on the Microstructure and Photovoltaic Performance of FAPbI3-Based Perovskite Solar Cells
RRL Solar 6, 8(2022) 2200345

Azimi Z, Gagrani N, Qu J, Lee Cheong Lem O, Mokkapati S, Cairney J, Zheng R, Tan H, Jagadish C, Wong-Leung J
Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications
Nanoscale Horizons 6, 7(2021) 559-567

Azimi Z, Gopakumar Saraswathyvilasam A, Ameruddin A, Li L, Truong T, Nguyen H, Tan H, Jagadish C, Wong-Leung J
Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires
Nano Research 15(2021) 3695-3703

Bera K, Roy A, Chugh D, Wong-Leung J, Tan H, Jagadish C
Role of defects and grain boundaries in the thermal response of wafer-scale hBN films
Nanotechnology 32, 7(2021)

Pham H, Yin Y, Andersson G, Weber K, Duong T, Wong-Leung J
Unraveling the influence of CsCl/MACl on the formation of nanotwins, stacking faults and cubic supercell structure in FA-based perovskite solar cells
Nano Energy 87(2021) 1-12

Chugh D, Adhikari S, Wong-Leung J, Lysevych M, Jagadish C, Tan H
Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN
Crystal Growth & Design 20, 3(2020) 1811-1819

Duong T, Pham H, Kho T, Phang S, Fong K, Yan D, Yin Y, Peng J, MAHMUD M, Gharibzadeh S, Nejand B, Hossain I, Khan M, Mozaffari N, Wu Y, Shen H, Zheng J, Mai H, Liang W, Samundsett C, Stocks M, McIntosh K, Andersson G, Lemmer U, Richards B, Liu Y, MacDonald D, Blakers A, Wong-Leung J, White T, Weber K, Catchpole K
High Efficiency Perovskite-Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite
Advanced Energy Materials 10, 9(2020) 1-15

Gustafsson A, Jiang N, Zheng C, Etheridge J, Gao Q, Tan H, Jagadish C, Wong-Leung J
Cathodoluminescence visualisation of local thickness variations of GaAs/AlGaAs quantum-well tubes on nanowires
Nanotechnology 31, 42(2020) 1-10

Jiang N, Joyce H, Parkinson P, Wong-Leung J, Tan H, Jagadish C
Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires
Frontiers in Chemistry 8(2020)

Patel J, Wright A, Lohmann K, Peng K, Xia C, Ball J, Noel N, Crothers T, Wong-Leung J, Snaith H, Herz L, Johnston M
Light Absorption and Recycling in Hybrid Metal Halide Perovskite Photovoltaic Devices
Advanced Energy Materials 10, 10(2020)

Pham H, Duong T, Weber K, Wong-Leung J
Insights into Twinning Formation in Cubic and Tetragonal Multi-cation Mixed-Halide Perovskite
ACS Materials Letters 2, 4(2020) 415-424

Pournia S, Linser S, Jnawali G, Jackson H, Smith L, Ameruddin A, Caroff-Gaonac'h P, Wong-Leung J, Tan H, Jagadish C, Joyce H
Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy
Nano Research 13, 6(2020) 1586-1591

Yang I, Kim S, Niihori M, Alabadla A, Li Z, Li L, Lockrey M, Choi D, Aharonovich I, Wong-Leung J, Tan H, Jagadish C, Fu L
Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes
Nano Energy 71(2020)

Zhao B, Lockrey M, Wang N, Caroff-Gaonac'h P, Yuan X, Li L, Wong-Leung J, Tan H, Jagadish C
Highly regular rosette-shaped cathodoluminescence in GaN self-assembled nanodisks and nanorods
Nano Research 13, 9(2020) 2500-2505

Butson J, Narangari P, Lysevych M, Wong-Leung J, Wan Y, Karuturi S, Tan H, Jagadish C
InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting
ACS Applied Materials and Interfaces 11, 28(2019) 25236-25242

Narangari P, Karuturi S, Wu Y, Wong-Leung J, Vora K, Lysevych M, Wan Y, Tan H, Jagadish C, Mokkapati S
Ultrathin Ta 2 O 5 electron-selective contacts for high efficiency InP solar cells
Nanoscale 11, 15(2019) 7497-7505

Pham H, Duong T, Rickard W, Kremer F, Weber K, Wong-Leung J
Understanding the Chemical and Structural Properties of Multiple-Cation Mixed Halide Perovskite
Journal of Physical Chemistry C 123, 43(2019) 26718-26726

Wong-Leung J, Yang I, Li Z, Karuturi S, Fu L, Tan H, Jagadish C
Engineering III-V Semiconductor Nanowires for Device Applications
Advanced Materials 32, 18(2019) 1904359

Yang I, Li Z, Wong-Leung J, Zhu Y, Li Z, Gagrani A, Li L, Lockrey M, Nguyen H, Lu Y, Tan H, Jagadish C, Fu L
Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes
Nano Letters 19, 6(2019) 3821-3829

Chugh D, Wong-Leung J, Li L, Lysevych M, Tan H, Jagadish C
Flow modulation epitaxy of hexagonal boron nitride
2D Materials 5, 4(2018) 1-10

Karuturi S, Shen H, Duong T, Narangari P, Yew R, Wong-Leung J, Catchpole K, Tan H, Jagadish C
Perovskite Photovoltaic Integrated CdS/TiO2 Photoanode for Unbiased Photoelectrochemical Hydrogen Generation
ACS Applied Materials and Interfaces 10, 28(2018) 23766-23773

Karuturi S, Yew R, Narangari P, Wong-Leung J, Li L, Vora K, Tan H, Jagadish C
CdS/TiO2 photoanodes via solution ion transfer method for highly efficient solar hydrogen generation
Nano Futures 2, 1(2018) 8

Liu A, Yan D, Wong-Leung J, Li L, Phang S, Cuevas A, MacDonald D
Direct observation of the impurity gettering layers in polysilicon-based passivating contacts for silicon solar cells
ACS Applied Energy Materials 1(2018) 2275-2282

Yang I, Zhang X, Zheng C, Gao Q, Li Z, Li L, Lockrey M, Nguyen H, Caroff-Gaonac'h P, Etheridge J, Tan H, Jagadish C, Wong-Leung J, Fu L
Radial Growth Evolution of InGaAs/InP Multi Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy
ACS Nano 12, 10(2018) 10374-10382

Zhao B, Lockrey M, Caroff-Gaonac'h P, Wang N, Li L, Wong-Leung J, Tan H, Jagadish C
The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods
Nanoscale 10, 23(2018) 11205-11210

Alexander-Webber J, Groschner C, Sagade A, Tainter G, Gonzalez-Zalba M, Di Pietro R, Wong-Leung J, Tan H, Jagadish C, Hofmann S, Joyce H
Engineering the Photoresponse of InAs Nanowires
ACS Applied Materials and Interfaces 9, 50(2017) 43993-44000

Rota M, Ameruddin A, Wong-Leung J, Belabbes A, Gao Q, Miriametro A, Mura F, Tan H, Polimeni A, Bechstedt F, Jagadish C, Capizzi M
Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires
Journal of Physical Chemistry C 121, 30(2017) 16650-16656

Schifano R, Riise H, Domaga?a J, Azarov A, Ratajczak R, Monakhov E, Venkatachalapathy V, Vines L, Chan K, Wong-Leung J, Svensson B
Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering
Journal of Applied Physics 121, 1(2017) 8

Wong-Leung J, Patel J, Reenen S, Sakai N, Wang J, Parrot E, Liu M, Snaith H, Herz L, Johnston M
Influence of Interface Morphology on Hysteresis in Vapor-Deposited Perovskite Solar Cells
Advanced Electronic Materials 3, 2(2017) 1-6

Chan K, Vines L, Li L, Jagadish C, Svensson B, Wong-Leung J
Zn precipitation and Li depletion in Zn implanted ZnO
Applied Physics Letters 109, 2(2016) 022102-1-4

Gao Q, Dubrovskii V, Caroff-Gaonac'h P, Wong-Leung J, Li L, Guo Y, Fu L, Tan H, Jagadish C
Simultaneous Selective-Area and Vapor?Liquid?Solid Growth of InP Nanowire Arrays
Nano Letters 16, 7(2016) 4361-4367

Nguyen H, Phang S, Wong-Leung J, MacDonald D
Photoluminescence Excitation Spectroscopy of Diffused Layers on Crystalline Silicon Wafers
IEEE Journal of Photovoltaics 6, 3(2016) 746-753

Tran P, Alkhaldi H, Gandhi H, Pastor D, Huston L, Wong-Leung J, Aziz M, Williams J
Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer
Applied Physics Letters 109, 8(2016)

Ameruddin A, Fonseka H, Caroff-Gaonac'h P, Wong-Leung J, Op het Veld R, Boland J, Johnston M, Tan H, Jagadish C
InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology
Nanotechnology 26, 20(2015) 1-10

Chan K, Vines L, Li L, Jagadish C, Svensson B, Wong-Leung J
Equilibrium shape of nano-cavities in H implanted ZnO
Applied Physics Letters 106, 21(2015)

Yuan X, Caroff-Gaonac'h P, Wong-Leung J, Tan H, Jagadish C
Controlling the morphology, composition and crystal structure in gold-seeded GaAs1-xSbx nanowires
Nanoscale 7, 11(2015) 4995-5003

Yuan X, Caroff-Gaonac'h P, Wong-Leung J, Fu L, Tan H, Jagadish C
Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering
Advanced Materials 27, 40(2015) 6096-6103

Chan K, Ton-That C, Vines L, Choi S, Phillips M, Svensson B, Jagadish C, Wong-Leung J
Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO
Journal of Physics D: Applied Physics 47, 34(2014) 1-6

Fonseka H, Caroff-Gaonac'h P, Wong-Leung J, Ameruddin A, Tan H, Jagadish C
Nanowires grown on InP (100): Growth Directions, Facets, Crystal Structures, and Relative Yield Control
ACS Nano 8, 7(2014) 6945-6954

Gao Q, Saxena D, Wang F, Fu L, Mokkapati S, Guo Y, Li L, Wong-Leung J, Caroff-Gaonac'h P, Tan H, Jagadish C
Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Nano Letters 14, 9(2014) 5206-5211

Jiang N, Wong-Leung J, Joyce H, Gao Q, Tan H, Jagadish C
Understanding the true shape of Au-catalyzed GaAs nanowires
Nano Letters 14, 10(2014) 5865-5872

Burgess T, Breuer S, Caroff-Gaonac'h P, Wong-Leung J, Gao Q, Tan H, Jagadish C
Twinning superlattice formation in GaAs nanowires
ACS Nano 7, 9(2013) 8105-8114

Chan K, Vines L, Johansen K, Monakhov E, Ye J, Parkinson P, Jagadish C, Svensson B, Wong-Leung J
Defect formation and thermal stability of H in high dose H implanted ZnO
Journal of Applied Physics 114, 8(2013)

Fonseka H, Tan H, Wong-Leung J, Kang J, Parkinson P, Jagadish C
High vertical yield InP nanowire growth on Si(111) using a thin buffer layer
Nanotechnology 24, 46(2013) 9

Hu W, Liu Y, Withers R, Frankcombe T, Noren L, Snashall A, Kitchin M, Smith P, Gong B, Chen H, Schiemer J, Brink F, Wong-Leung J
Electron-pinned defect-dipoles for high-performance colossal permittivity materials
Nature Materials 12, 9(2013) 821-826

Jiang N, Gao Q, Parkinson P, Wong-Leung J, Mokkapati S, Breuer S, Tan H, Zheng C, Jagadish C, Etheridge J
Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell Nanowires through shell growth optimization
Nano Letters 13, 11(2013) 5135-5140

Ullah A, Joyce H, Burke A, Wong-Leung J, Tan H, Jagadish C, Micolich A
Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
Physica Status Solidi: Rapid Research Letters 7, 10(2013) 911-914

Yong C, Wong-Leung J, Joyce H, Lloyd-Hughes J, Gao Q, Tan H, Jagadish C, Johnson M, Herz L
Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions
Nano Letters 13, 9(2013) 4280-4287

Zheng C, Wong-Leung J, Gao Q, Tan H, Jagadish C, Etheridge J
Polarity-driven 3-fold symmetry of GaAs/AlGaAs core multishell nanowires
Nano Letters 13, 8(2013) 3742-3748

Charnvanichborikarn S, Wong-Leung J, Jagadish C, Williams J
Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon
MRS Communications 2, 3(2012) 101-105

Jiang N, Parkinson P, Breuer S, Gao Q, Tan H, Wong-Leung J, Jagadish C
Long minority carrier lifetime in Au-catalyzed GaAs/Al_xGa_1?xAs core-shell nanowires
Applied Physics Letters 101, 2(2012) 02311-1 to 02311-4

Johnson B, Villis B, Burgess J, Stavrias N, McCallum J, Charnvanichborikarn S, Wong-Leung J, Jagadish C, Williams J
Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
Journal of Applied Physics 111, 9(2012) 094910/1-8

Joyce H, Wong-Leung J, Yong C, Docherty C, Paiman S, Gao Q, Tan H, Jagadish C, Lloyd-Hughes J, Herz L, Johnston M
Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy
Nano Letters 12, 10(2012) 5325-5330

Mokkapati S, Saxena D, Jiang N, Parkinson P, Wong-Leung J, Gao Q, Tan H, Jagadish C
Polarization Tunable, Multicolor Emission from Core-Shell Photonic III-V Semiconductor Nanowires
Nano Letters 12, 12(2012) 6428-6431

Vines L, Wong-Leung J, Jagadish C, Quemener V, Monakhov E, Svensson B
Acceptor-like deep level defects in ion-implanted ZnO
Applied Physics Letters 100, 21(2012)

Vines L, Wong-Leung J, Jagadish C, Monakhov E, Svensson B
Ion implantation induced defects in ZnO
Physica B 407, 10(2012) 1481-1484

Zuber K, Merkens K, Frölich K, Murphy P, Wong-Leung J, Evans D
Anderson-like localization in ultrathin nanocomposite alloy films on polymeric substrates
Scripta Materialia 67, 10(2012) 866-869

Joyce H, Gao Q, Wong-Leung J, Kim Y, Tan H, Jagadish C
Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 17, 4(2011) 766-778

McCallum J, Villis B, Johnson B, Stavrias N, Burgess J, Charnvanichborikarn S, Wong-Leung J, Williams J, Jagadish C
Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon
Physica Status Solidi A 208, 3(2011) 620-623

McKerracher I, Wong-Leung J, Jolley G, Fu L, Tan H, Jagadish C
Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors
IEEE Journal of Quantum Electronics 47, 5(2011) 577-590

Messing M, Wong-Leung J, Zanolli Z, Joyce H, Tan H, Gao Q, Wallenberg L, Johansson J, Jagadish C
Growth of Straight InAs-on-GaAs Nanowire Heterostructures
Nano Letters 11, 9(2011) 3899-3905

Barik S, Tan H, Wong-Leung J, Jagadish C
Growth and characterization of self-assembled InAs/InP quantum dot structures
Journal of Nanoscience and Nanotechnology 10, 3(2010) 1525-1536

Charnvanichborikarn S, Villis B, Johnson B, Wong-Leung J, McCallum J, Williams J, Jagadish C
Effect of boron on interstitial-related luminescence centers in silicon
Applied Physics Letters 96, 5(2010) 051906

Joyce H, Wong-Leung J, Gao Q, Tan H, Jagadish C
Phase Perfection in Zinc Blende and Wurtzite III-V Nanowires Using Basic Growth Parameters
Nano Letters 10, 3(2010) 908-915

Charnvanichborikarn S, Conway M, Wong-Leung J, Williams J
Achieving a narrow size distribution of Au particles at a precise depth in SiO2 by segregation of Au precipitates
Nanotechnology 20, 18(2009) 6

Charnvanichborikarn S, Wong-Leung J, Williams J
Self-assembled Au nanoparticles in SiO₂ by ion implantation and wet oxidation
Journal of Applied Physics 106, 10(2009) 103526/1-8

Mokkapati S, Wong-Leung J, Tan H, Jagadish C, McBean K, Phillips M
Tuning the bandgap of InAs quantum dots by selective-area MOCVD
Journal of Physics D: Applied Physics 41, 085104(2008) 1-4

Wong-Leung J, Svensson B
Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC
Applied Physics Letters 92, 14(2008) 1-3

Wong-Leung J, Janson M, Kuznetsov A, Svensson B, Linnarsson M, Hallen A, Jagadish C, Cockayne D
Ion implantation in 4H-SiC
Nuclear Instruments and Methods in Physics Research: Section B 266(2008) 1367-1372

Coleman P, Harding R, Davies G, Tan J, Wong-Leung J
The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si
Journal of Materials Science 18(2007) 695-700

Fu L, Tan H, McKerracher I, Wong-Leung J, Jagadish C, Vukmirovic N, Harrison P
Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors
Journal of Applied Physics 99, 11(2006) 114517-1-8

Harding R, Davies G, Hayama S, Coleman P, Burrows C, Wong-Leung J
Photoluminescence Response of Ion-implanted Silicon
Applied Physics Letters 89, 18(2006) 181917-1-3

Harding R, Davies G, Tan J, Coleman P, Burrows C, Wong-Leung J
Identification by Photoluminescence and Positron Annihilation of Vacancy and Interstitial Instrinsic Defects in Ion-implanted Silicon
Journal of Applied Physics 100(2006) 073501-1-4

Linnarsson M, Janson M, Nordell N, Wong-Leung J, Schoner A
Formation of Precipitates in Heavily Boron Doped 4H-SiC
Applied Surface Science 252(2006) 5316-5320

Sears K, Tan H, Wong-Leung J, Jagadish C
The Role of Arsine in the Self-assembled Growth of InAs/GaAs Quantum Dots by Metal Organic Chemical Vapor Deposition
Journal of Applied Physics 99, 4(2006) 044908-1-5

Sears K, Wong-Leung J, Tan H, Jagadish C
A Transmission Electron Microscopy Study of Defects formed through the Capping Layer of Self-assembled InAs/GaAs Quantum Dot Samples
Journal of Applied Physics 99, 11(2006) 113503-1-8

Williams J, Conway M, Wong-Leung J
Nanocavities and nanoparticles formed in silicon by ion irradiation
Journal of Environmental Chemical Engineering 70, 6(2006) 881-884

Slotte J, Saarinen K, Janson M, Hallen A, Kuznetsov A, Svensson B, Wong-Leung J, Jagadish C
Fluence, Flux and Implantation Temperature Dependence of Ion-Implantation-Induced Defect Production in 4H-SiC
Journal of Applied Physics 97, 3(2005) 033513-1-7

Sears K, Wong-Leung J, Tan H, Jagadish C
InAs Quantum Dots Grown on InGaAs Buffer Layers by Metal-Organic Chemical Vapor Deposition
Journal of Crystal Growth 281(2005) 290-296

Williams J, Kucheyev S, Tan H, Wong-Leung J, Jagadish C
Ion Irradiation-induced Disordering of Semiconductors: Defect Structures and Applications
Philosophical Magazine 85, 4-7(2005) 677-687

Wong-Leung J, Linnarsson M, Svensson B, Cockayne D
Ion-Implantation-Induced Extended Defect Formation in (0001) and (1120) 4H-SiC
Physical Review B: Condensed Matter and Materials 71, 16(2005) 165210-1-13

Buda M, Hay J, Tan H, Wong-Leung J, Jagadish C
Low Loss, Thin p-clad 980-nm InGaAs Semiconductor Laser Diodes with an Asymmetric Structure Design
IEEE Journal of Quantum Electronics 39, 5(2003) 625-633

Harding R, Davies G, Coleman P, Burrows C, Wong-Leung J
Study of defects in ion-implanted silicon using photoluminescence and positron annihilation
Physica B 340-342(2003) 738-742

Kuznetsov A, Wong-Leung J, Hallen A, Jagadish C, Svensson B
Dynamic Annealing in Ion Implanted SiC: Flux versus Temperature Dependance
Journal of Applied Physics 94, 11(2003) 7112-7115

Leveque P, Hallen A, Svensson B, Wong-Leung J, Jagadish C, Privitera V
Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon
European Physical Journal - Applied Physics 23(2003) 5-9

Leveque P, Kortegaard-Nielsen H, Pellegrino P, Hallen A, Svensson B, Kuznetsov A, Wong-Leung J, Jagadish C, Privitera V
Vacancy and Interstitial Depth Profiles in Ion-implanted Silicon
Journal of Applied Physics 93, 2(2003) 871-877

Linnarsson M, Zimmermann U, Wong-Leung J, Schoner A, Janson M, Jagadish C, Svensson B
Solubility Limits of Dopants in 4H-SiC
Applied Surface Science 203-204(2003) 427-432

Sears K, Buda M, Wong-Leung J, Fu L, Jagadish C, Stiff-Roberts A, Bhattacharya P
Influence of Rapid Thermal Annealing on a 30 Stack InAs/GaAs Quantum Dot Infrared Photodetector
Journal of Applied Physics 94, 8(2003) 5283-5289

Wong-Leung J, Janson M, Svensson B
Effect of Crystal Orientation on the Implant Profile of 60keV Al into 4H-SiC Crystals
Journal of Applied Physics 93, 11(2003) 8914-8917

Wong-Leung J, Linnarsson M, Svensson B
A Comparison of Extended Defect Formation Induced by Ion Implantation in (0001) and (1120)4H-SiC
Physica B 340-342(2003) 132-136

Bradby J, Kucheyev S, Williams J, Wong-Leung J, Swain M, Munroe P, Li G, Phillips M
Indentation-induced Damage in GaN Epilayers
Applied Physics Letters 80, 3(2002) 383-385

Bradby J, Williams J, Wong-Leung J, Kucheyev S, Swain M, Munroe P
Spherical Indentation of Compound Semiconductors
Philosophical Magazine A 82, 10(2002) 1931-1939

Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Nanoindentation-induced Deformation of Ge
Applied Physics Letters 80, 15(2002) 2651-2653

Davies G, Harding R, Jin T, Mainwood A, Wong-Leung J
Optical Studies of Ion-Implantation Centres in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 186(2002) 1-9

Fu L, Wong-Leung J, Deenapanray P, Tan H, Jagadish C, Gong B, Lamb R, Cohen R, Reichert W, Dao L, Gal M
Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide
Journal of Applied Physics 92, 7(2002) 3579-3583

Monakhov E, Wong-Leung J, Kuznetsov A, Jagadish C, Svensson B
Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation
Physical Review B 65(2002) 245201-1-9

Pellegrino P, Leveque P, Kortegaard-Nielsen H, Hallen A, Wong-Leung J, Jagadish C, Svensson B
Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon
Nuclear Instruments and Methods in Physics Research: Section B 186(2002) 334-338

Jagadish C, Svensson B, Wong-Leung J
"Response to "comment on 'Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation'" [Appl. Phys. Lett. 80, 1492 (2002)]"
Applied Physics Letters 80, 8(2002) 1494-1495

Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Mechanical Deformation in Silicon by Micro-indentation
Journal of Materials Research 16, 5(2001) 1500-1507

Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Mechanical Deformation of InP and GaAs by Spherical Indentation
Applied Physics Letters 78, 21(2001) 3235-3237

Linnarsson M, Janson M, Zimmermann U, Svensson B, Persson P, Hultman L, Wong-Leung J, Karlsson S, Schoner A, Bleichner H, Olsson E
Solubility Limit and Precipitate Formation in Al-doped 4H-SiC Epitaxial Material
Applied Physics Letters 79, 13(2001) 2016-2018

Liu A, McCallum J, Wong-Leung J
The crystallisation of deep amorphous wells in silicon produced by ion implantation
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 164-168

Liu A, McCallum J, Wong-Leung J
Defect Formation Due to the Crystallization of Deep Amorphous Volumes Formed in Silicon by Mega Electron Volt (MeV) Ion Implantation
Journal of Materials Research 16, 11(2001) 3229-3237

MacDonald D, Cuevas A, Wong-Leung J
Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements
Journal of Applied Physics 89, 12(2001) 7932-7939

Pellegrino P, Leveque P, Wong-Leung J, Jagadish C, Svensson B
Separation of vacancy and interstitial depth profiles in ion-implanted silicon: experimental observation
Applied Physics Letters 78, 22(2001) 3442-3444

Stritzker B, Petravic M, Wong-Leung J, Williams J
Selectivity of Nanocavities and Dislocations for Gettering of Cu and Fe in Silicon
Applied Physics Letters 78, 18(2001) 2682-2684

Stritzker B, Petravic M, Wong-Leung J, Williams J
Efficiency of dislocations and cavities for gettering of Cu and Fe in silico
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 154-158

Williams J, Conway M, Williams B, Wong-Leung J
Direct Observation of Voids in the Vacancy Excess Region of Ion Bombarded Silicon
Applied Physics Letters 78, 19(2001) 2867-2869

Williams J, Ridgway M, Conway M, Wong-Leung J, Zhu X, Petravic M, Fortuna F, Ruault M, Bernas H, Kinomura A, Nakano Y, Hayashi Y
Interaction of Defects and Metals with Nanocavities in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 178(2001) 33-43

Wong-Leung J, Jagadish C, Conway M, Fitzgerald J
Effect of implant temperature on secondary defects created by MeV Sn implantation is silicon
Journal of Applied Physics 89(2001) 2556-2559

Bradby J, Williams J, Wong-Leung J, Swain M
Mechanical deformation of crystalline silicon during nanoindentation
Materials Research Society Symposium Proceedings 649(2001) Q8.10.1-Q8.10.6

Williams J, Ridgway M, Conway M, Wong-Leung J, Williams B, Petravic M
Interactions of point defects and impurities with open volume defects in silicon
Materials Research Society Symposium Proceedings 647(2001) O2.4.1-O2.4.11

Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Transmission Electron Microscopy Observation of Deformation Microstructure under Spherical Indentation in Silicon
Applied Physics Letters 77(2000) 3749-3751

Wong-Leung J, Fatima S, Jagadish C, Fitzgerald J
Effect of implant temperature on extended defects created by ion implantation in silicon
Defects and Diffusion Forum Part A: Defect and Diffusion Forum 183, 1(2000) 163-169

Wong-Leung J, Fatima S, Jagadish C, Fitzgerald J, Chou C, Zou J, Cockayne D
Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon
Journal of Applied Physics 88(2000) 1312-1318

Fatima S, Wong-Leung J, Fitzgerald J, Jagadish C
Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si
Applied Physics Letters 74(1999) 1141-1143

Li Z, Wong-Leung J, Deenapanray P, Conway M, Chivers D, Fitzgerald J, Williams J
The Role of Fe on the Crystallisation of a-Si3N4 from Amorphous Si-N Formed by Ion Implantation
Nuclear Instruments and Methods in Physics Research: Section B 148(1999) 534-539

Williams J, Chen Y, Wong-Leung J, Kerr-Menz A, Swain M
Ultra-Micro-Indentation of Silicon and Compound Semiconductors with Spherical Indenters
Journal of Materials Research 14, 6(1999) 2338-2343

Williams J, Conway M, Wong-Leung J, Deenapanray P, Petravic M, Brown R, Eaglesham D, Jacobson D
The Role of Oxygen on the Stability of Gettering of Metals to Cavities in Silicon
Applied Physics Letters 75, 16(1999) 2424-2426

Wong-Leung J, Williams J, Kinomura A, Nakano Y, Hayashi Y, Eaglesham D
Diffusion and Transient Trapping of Metals in Silicon
Physical Review B 59, 11(1999) 7990-7998

Fatima S, Jagadish C, Wong-Leung J
Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions
Griffith Asia Quarterly (1999) 505-508

Fatima S, Fitzgerald J, Jagadish C, Wong-Leung J
Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ions
Applied Physics Letters 72, 23(1998) 3044-3046

Williams J, Wong-Leung J
The precipitation of Fe at the Si-SiO2 interface
Journal of Applied Physics 83, 1(1998) 580-584

Williams J, Conway M, Petravic M, Tan H, Wong-Leung J
Analysis of semiconductors by ion channelling: Applications and pitfalls
Nuclear Instruments and Methods in Physics Research: Section B 136-138(1998) 453-459

Williams J, Petravic M, Wong-Leung J
Microstructural difference between platinum and silver trapped in hydrogen induced cavities in silicon
Applied Physics Letters 72, 21(1998) 2713-2715

Williams J, Petravic M, Wong-Leung J
The influence of cavities and point defects on boron diffusion in silicon
Applied Physics Letters 72, 19(1998) 2418-2420

Williams J, Petravic M, Wong-Leung J
Efficient gettering of low concentrations of copper contamination to hydrogen induced nanocavities in silicon
Applied Physics Letters 73, 18(1998) 2639-2641

(130 publications)

Conference paper

Joyce H, Uswachoke C, Adeyemo S, Kar S, Damry D, Peng K, Johnston M, Wong-Leung J, Tan H, Jagadish C
Engineering III-V Nanowires for optoelectronics: From visible to terahertz
Novel Optical Materials and Applications, NOMA 2019 Part F135-NOMA 2019(2019) 1-2

Joyce H, Uswachoke C, Baig S, Adeyemo S, Boland J, Damry D, Davies C, Wong-Leung J, Tan H, Jagadish C, Herz L, Johnston M
Engineering III-V nanowires for optoelectronics: From epitaxy to terahertz photonics
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV 2018 ?, ?(2018)

Liu A, Yan D, Wong-Leung J, Li L, Phang S, Cuevas A, MacDonald D
Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cells
7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ?, ?(2018) 1667-1671

Fonseka H, Caroff-Gaonac'h P, Guo Y, Wang F, Wong-Leung J, Tan H, Jagadish C
InP-Based Radial Heterostructures Grown on [100] Nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?(2014) 168-170

Jiang N, Wong-Leung J, Gao Q, Tan H, Jagadish C
Sidewall evolution in VLS grown GaAs Nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?(2014) 87-89

Ullah A, Joyce H, Burke A, Wong-Leung J, Tan H, Jagadish C, Micolich A
How InAs Crystal Phase affects the Electrical Performance of InAs Nanowire FETs
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?(2014) 283-285

Gao Q, Jiang N, Joyce H, Paiman S, Wong-Leung J, Lee Y, Fu L, Tan H, Jagadish C
Compound semiconductor nanowires for optoelectronic devices
10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 ?, ?(2013) 1-2

Jiang N, Gao Q, Parkinson P, Wong-Leung J, Tan H, Jagadish C
High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
2013 26th IEEE Photonics Conference, IPC 2013 ?, ?(2013) 476-477

Joyce H, Docherty C, Yong C, Wong-Leung J, Gao Q, Paiman S, Tan H, Jagadish C, Lloyd-Hughes J, Herz L, Johnston M
Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 ?, ?(2013) 1-2

Joyce H, Docherty C, Yong C, Wong-Leung J, Gao Q, Paiman S, Tan H, Jagadish C, Lloyd-Hughes J, Herz L, Johnston M
Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy
SPIE Micro+Nano Materials, Devices, and Applications 2013 Conference 8923(2013) 1-6

Ameruddin A, Tan H, Fonseka H, Gao Q, Wong-Leung J, Parkinson P, Breuer S, Jagadish C
Influence of growth temperature and V/III ratio on Au-assisted In_xGa_1-xAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?(2012) 37-38

Chan K, Ye J, Parkinson P, Monakhov E, Johansen K, Vines L, Svensson B, Jagadish C, Wong-Leung J
Structural and Optical properties of H implanted ZnO
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?(2012) 219-220

Gao Q, Tan H, Fu L, Parkinson P, Breuer S, Wong-Leung J, Jagadish C
InP Nanowires Grown by SA-MOVPE
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?(2012) 45-46

Jiang N, Parkinson P, Gao Q, Wong-Leung J, Breuer S, Tan H, Jagadish C
Improvement of Minority Carrier Lifetime in GaAs/Al_xGal_1-xAs Core-Shell Nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?(2012) 33-34

Linnarsson M, Wong-Leung J, Hallen A, Khartsev S, Grishin A
Mn implantation for new applications of 4H-SiC
International Conference on Silicon Carbide and Related Materials (ICSCRM 2011) 717-720(2012) 221-224

Vines L, Neuvonen P, Kuznetsov A, Wong-Leung J, Jagadish C, Svensson B
Anomalous diffusion of intrinsic defects in K+ implanted ZnO using Li as tracer
Materials Research Society Fall Meeting 2011 1394(2012) 75-80

Yuan X, Tan H, Parkinson P, Wong-Leung J, Breuer S, Gao Q, Jagadish C
Growth and characterization of GaAx_1-xSb_x nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?(2012) 141-142

Burgess J, Johnson B, Villis B, McCallum J, Charnvanichborikarn S, Wong-Leung J, Williams J
Comparison between implanted boron and phosphorus in silicon wafers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?(2010) 225-226

McKerracher I, Wong-Leung J, Jolley G, Fu L, Tan H, Jagadish C
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?(2010) 2

Bao J, Charnvanichborikarn S, Yang Y, Tabbal M, Shin B, Wong-Leung J, Williams J, Aziz M, Capasso F
Point Defect Engineered Si Sub-Bandgap Light-emitting Diodes
Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV 2007 6800(2008) 1-8

Sears K, Tan H, Buda M, Wong-Leung J, Jagadish C
Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers
International Conference on Nanoscience and Nanotechnology (ICONN 2006) ?, ?(2006) 505-508

Gareso P, Tan H, Wong-Leung J, Jagadish C, Dao L
Proton Irradiation Induced Intermixing in InxGa1_xAs/InP Quantum Wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) ?, ?(2005) 93-96

Sears K, Wong-Leung J, Buda M, Tan H, Jagadish C
Growth and Characterisation of InAs/GaAs Quantum Dots grown by MOCVD
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) ?, ?(2005) 1-4

Williams J, Elliman R, Tan H, McGowan P, Wong-Leung J, Jagadish C
Production and Processing of Semiconductor Nanocrystals and Nanostructures for Photonic Applications
National Conference and Exhibition on Nanotechnology 2003 ?, ?(2003) 74-80

Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Mechanical Deformation of Crystalline Silicon During Nanoindentation
Materials Research Society Meeting Fall 2000 ?, ?(2001) Q8.10.1-6

Williams J, Ridgway M, Conway M, Wong-Leung J, Williams B, Petravic M, Fortuna F, Ruault M, Bernas H
Interactions of Point Defects and Impurities With Open Volume Defects in Silicon
Materials Research Society Meeting Fall 2000 ?, ?(2001) 02.4.1-02.4.11

(26 publications)