Emeritus Professor Jim Williams

Position Emeritus Professor
Department Department of Electronic Materials Engineering
Qualifications BSc PhD NSW, FAA, FTSE, FAIP, FIEAust
Office phone (02) 612 50373
Email
Office Cockcroft 4 39

Publications

Book chapter


Damage Formation, Amorphization and Crystallization in Semiconductors at Elevated Temperatures
Ion Beam Modification of Solids
Springer International Publishing Switzerland, Switzerland (2016) 243-285
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Nanoindentation of Silicon and Germanium
Semiconductors and Semimetals: Defects in Semiconductors
Elsevier Inc., Burlington (2015) 165-203
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Ultrafast Laser Induced Confined Microexplosion: A New Route to Form Super-Dense Material Phases
Fundamentals of Laser-Assisted Micro- and Nanotechnologies
Springer International Publishing AG, Berlin (2014) 3-26
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Voids and Nanocavities in Silicon
Topics in Applied Physics 116: Materials Science with Ion Beams
Springer, Berlin (2010) 113-146
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Ion-Beam-Induced Amorphization and Epitaxial Crystallization of Silicon
Topics in Applied Physics 116: Materials Science with Ion Beams
Springer, Berlin (2010) 73-111
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Synthesis of Boron Nitride Nanotubes Using a Ball-Milling and Annealing Method
Nanoengineering of Structural, Functional, and Smart Materials
CRC Press LLC, Boca Raton USA (2006) 169-195

(6 publications)

Journal article

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The high pressure phase transformation behavior of silicon nanowires
Applied Physics Letters 113, 12() 5
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Hyperdoping of Si by ion implantation and pulsed laser melting
Materials Science in Semiconductor Processing 62() 103-114
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Ion-beam synthesis and thermal stability of highly tin-concentrated germanium - tin alloys
Materials Science in Semiconductor Processing 62() 192-195
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Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si
Physical Review Materials 1, 7() 10
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Cold nanoindentation of germanium
Applied Physics Letters 111, 2() 021901 1-4
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Void evolution and porosity under arsenic ion irradiation in GaAs1-xSbx alloys
Journal of Physics D: Applied Physics 50, 12() 8
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Void evolution and porosity under arsenic ion irradiation in GaAs1−xSbx alloys
Journal of Physics D: Applied Physics 50, 12() 125101-125108
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Thermal stability of simple tetragonal and hexagonal diamond germanium
Journal of Applied Physics 122, 17() 1-7
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Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material
Journal of Applied Physics 119, 18() 183102
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Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer
Applied Physics Letters 109, 8()
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The influence of capping layers on pore formation in Ge during ion implantation
Journal of Applied Physics 120, 21() 1-10
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Dependence of short and intermediate-range order on preparation in experimental and modeled pure a-Si
Journal of Non-crystalline Solids 438() 26-36
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Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys
Journal of Applied Physics 119, 9()
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Crystal structure of laser-induced subsurface modifications in Si
Applied Physics A: Materials Science and Processing 120, 2() 683-691
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The influence of hold time on the onset of plastic deformation in silicon
Journal of Applied Physics 118, 24()
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Phase transformation as the single-mode mechanical deformation of silicon
Applied Physics Letters 106, 25() 1-4
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Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation
Journal of Applied Physics 117, 20() 1-9
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Advances in ion beam modification of semiconductors
Current Opinion in Solid State and Materials Science 19, 1() 49-67
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Single-Phase Filamentary Cellular Breakdown Via Laser-Induced Solute Segregation
Advanced Functional Materials 25, 29() 4642-4649
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Thermal evolution of the metastable r8 and bc8 polymorphsofsilicon
High Pressure Research 35, 2() 99-116
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Confined micro-explosion induced by ultrashort laser pulse at SiO2/Si interface
Applied Physics A: Materials Science and Processing 114, 1() 33-43
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Quantitative electromechanical characterization of materials using conductive ceramic tips
Acta Materialia 71() 153-163
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Room-temperature sub-band gap optoelectronic response of hyperdoped silicon
Nature Communications 5, 3011() 1-8
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Phase transformation pathways in amorphous germanium under indentation pressure
Journal of Applied Physics 115, 15() 153502/1-10
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Controlled formation of metastable germanium polymorphs
Physical Review B 89, 14() 1-6
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Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens
Journal of Applied Physics 113, 21() 213501

Ion beams and channelling: The early days with Jak Kelly
Journal and Proceedings of the Royal Society of New South Wales 146, 449-450() 110-115
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Supersaturating silicon with transition metals by ion implantation and pulsed laser melting
Journal of Applied Physics 114, 12()
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New insight into pressure-induced phase transitions of amorphous silicon: the role of impurities
Journal of Applied Crystallography 46, 3() 758-768
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Evidence for the R8 phase of germanium
Physical Review Letters 110, 8() 1-5
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Hexagonal germanium formed via a pressure-induced phase transformation of amorphous germanium under controlled nanoindentation
Physica Status Solidi: Rapid Research Letters 7, 5() 355-359
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Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
Journal of Applied Physics 111, 9() 094910/1-8
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Photocarrier lifetime and transport in silicon supersaturated with sulfur
Applied Physics Letters 101, 11()
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The indentation hardness of silicon measured by instrumented indentation: What does it mean?
Journal of Materials Research 27, 24() 3066-3072
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Structural characterization of B-doped diamond nanoindentation tips
Journal of Materials Research 26, 24() 3051-3057
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Experimental evidence for semiconducting behavior of Si-XII
Physical Review B: Condensed Matter and Materials 83, 7() 075316
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Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing
Journal of Applied Physics 110, 9() 1-3
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Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation
Physical Review B: Condensed Matter and Materials 83, 23() 235205-1 - 235205-8
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Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon
Physica Status Solidi A 208, 3() 620-623
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Effect of boron on interstitial-related luminescence centers in silicon
Applied Physics Letters 96, 5() 051906
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Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting
Journal of Applied Physics 107, 12() 1-5
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Nanoindentation of ion-implanted crystalline germanium
Physical Review B: Condensed Matter and Materials 80, 115210() 1-8
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Nanoindentation-induced phase transformations in silicon at elevated temperatures
Nanotechnology 20, 135603() 1-5
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Structural characterization of pressure-induced amorphous silicon
Physical Review B: Condensed Matter and Materials 79, 155209() 1-8
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Thickness-dependent phase transformation in nanoindented germanium thin films
Nanotechnology 19, 475709() 1-8
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In-situ electrical probing of zones of nanoindentation-induced phases of silicon
Materials Research Society Symposium Proceedings 1146() 1-6
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Giant pop-ins in nanoindented silicon and germanium caused by lateral cracking
Journal of Materials Research 23, 2() 297-300
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Indentation-induced phase transformations in silicon as a function of history of unloading
Journal of Materials Research 23, 10() 2645-2649
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Rare-earth doped boron nitride nanotubes
Materials Science and Engineering B 146, 1-3() 189-192
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Cathodoluminescence of Boron Nitride Nanotubes Doped by Europium
Journal of the Australian Ceramics Society 44, 2() 68-70
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Eu-doped Boron Nitride Nanotubes as a Nanometer-Sized Visible-Light Source
Advanced Materials 19, 14() 1845-1848
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Giant pop-ins and amorphization in germanium during indentation
Journal of Applied Physics 101() 043524 1-9
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Point defect engineered Si sub-bandgap light-emitting diode
Optics Express 15, 11() 6727-6733
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On the cyclic indentation behavior of crystalline silicon with a sharp tip
Journal of Materials Research 22, 11() 2992-2997
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Nanocavities and nanoparticles formed in silicon by ion irradiation
Journal of Environmental Chemical Engineering 70, 6() 881-884
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Purification of Boron Nitride Nanotubes
Chemical Physics Letters 425() 315-319
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Gettering of Copper to Hydrogen-induced Cavities in Multicrystalline Silicon
Journal of Applied Physics 98, 6() 066102-1-3
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Pop-In Events Induced by Spherical Indentation in Compound Semiconductors
Journal of Materials Research 19, 1() 380-386
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Lattice Damage Produced in GaN by Swift Heavy Ions
Journal of Applied Physics 95, 10() 5360-5365
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The Nucleation and Growth of Carbon Nanotubes in a Mechano-Thermal Process
Carbon 42() 1543-1548
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In-situ Microscopy Study of Nanocavity Shrinkage in Si under Ion Beam Irradiation
European Physical Journal - Applied Physics 23() 39-40
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Nature of Planar Defects in Ion-implanted GaN
Electrochemical and Solid-State Letters 6, 3() G34-G36
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Shrinkage Mechanism of Nanocavities in Amorphous Si under Ion Irradiation: An in situ Study
Nuclear Instruments and Methods in Physics Research: Section B 206() 912-915
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Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon
Applied Physics Letters 82, 18() 2987-2989
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Ion-Beam-Produced Structural Defects in ZnO
Physical Review B 67, 9() 094115-1-11
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ICP Dry Etching of ZnO and Effects of Hydrogen
Solid-State Electronics 47() 2289-2294
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In Situ Electrical Characterization of Phase Transformations in Si during Indentation
Physical Review B 67() 085205-1-9
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Hydrogen Incorporation, Diffusivity and Evolution in Bulk ZnO
Solid-State Electronics 47() 2255-2259
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Implant Isolation of ZnO
Journal of Applied Physics 93, 5() 2972-2976
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Blistering of H-implanted GaN
Journal of Applied Physics 91, 6() 3928-3930
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Electrical Isolation of ZnO by Ion Bombardment
Applied Physics Letters 81, 18() 3350-3352
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Structural Disorder in Ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5() 787-789
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X-ray Spectrometry Investigation of Electrical Isolation in GaN
Journal of Applied Physics 91, 6() 3940-3942
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Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature
Nuclear Instruments and Methods in Physics Research: Section B 190() 782-786
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Structural disorder in ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5() 787-789
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How Nanocavities in Amorphous Si Shrink Under Ion Beam Irradiation: An in situ Study
Applied Physics Letters 81, 14() 2617-2619
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Ion-beam-produced Damage and its Stability in AIN Films
Journal of Applied Physics 92, 7() 3554-3558
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Chemical Origin of the Yellow Luminescence in GaN
Journal of Applied Physics 91, 9() 5857-5874
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Spherical Indentation of Compound Semiconductors
Philosophical Magazine A 82, 10() 1931-1939
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Contact-induced Defect Propagation in ZnO
Applied Physics Letters 80, 24() 4537-4539
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Indentation-induced Damage in GaN Epilayers
Applied Physics Letters 80, 3() 383-385
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Large-quantity Production of High-yield Boron Nitride Nanotubes
Journal of Materials Research 17, 8() 1896-1899
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In Situ Measurements of the Channeling Dependence of Ion-beam-induced Recrystallization in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 190() 772-776
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Thermal Stability of Ion-implanted Hydrogen in ZnO
Applied Physics Letters 81, 21() 3996-3998
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The Effect of Crystal Orientation on Thermal Shock-induced Fracture and Properties of Ion Implated Sapphire
Nuclear Instruments and Methods in Physics Research: Section B 190() 751-755
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Platinum Atom Location on the Internal Walls of Nanocavities Investigated by Ion Channeling Analysis
Nuclear Instruments and Methods in Physics Research: Section B 190() 606-610
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Interaction of Defects and Metals with Nanocavities in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 178() 33-43
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Direct Observation of Irradiation-Induced Nanocavity Shrinkage in Si
Applied Physics Letters 79, 21() 3416-3418
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Efficiency of dislocations and cavities for gettering of Cu and Fe in silico
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 154-158
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Mechanical properties of As-grown and ion-beam-modified GaN films
Materials Research Society Symposium Proceedings 649() Q5.5.1-Q5.5.6
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Implantation-Produced Structural Damage in InxGa1-xN
Applied Physics Letters 79, 5() 602-604
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Mechanical deformation of crystalline silicon during nanoindentation
Materials Research Society Symposium Proceedings 649() Q8.10.1-Q8.10.6

Crystalline-to-amorphous phase transformation in ion-irradiated GaAs
Physical Review B 64, 15() 1552021-1552026

Implantation-produced structural damage in InxGa1-xN
Applied Physics Letters 79, 5() 602-604
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Interactions of point defects and impurities with open volume defects in silicon
Materials Research Society Symposium Proceedings 647() O2.4.1-O2.4.11
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Ion Beam Modification of Thermal Stress Resistance of MgO Single Crystals with Different Crystallographic Faces
Nuclear Instruments and Methods in Physics Research: Section B 178() 138-143
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Ion Implantation into GaN
Materials Science and Engineering R-Reports 33() 51-107
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High-dose ion implantation into GaN
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 214-218
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Effects of excitation density on cathodoluminescence from GaN
Applied Physics Letters 79, 14() 2154-2156
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Cathodoluminescence Depth Profiling of Ion-Implanted GaN
Applied Physics Letters 78, 1() 34-36
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Deformation Behavior of Ion-Beam-Modified GaN
Applied Physics Letters 78, 2() 156-158
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Mechanical Deformation in Silicon by Micro-indentation
Journal of Materials Research 16, 5() 1500-1507
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Electrical isolation of GaN by MeV ion irradiation
Applied Physics Letters 78, 7() 943-945
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Ion-beam-induced reconstruction of amorphous GaN
Physical Review B 63() 113202-1-4
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The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN
Nuclear Instruments and Methods in Physics Research: Section B 178() 209-213
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Effect of ion species on the accumulation of ion-beam damage in GaN
Physical Review B 64() 035202/1-10
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The use of micro-raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1()
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The use of micro-raman spectroscopy to monitor high-pressure hightemperature annealing of ion-implanted GaN films
Materials Research Society Symposium Proceedings 595() W11461-W11466
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Ion-beam-induced dissociation and bubble formation in GaN
Applied Physics Letters 77, 22() 3577-3579
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Preferential Amorphization and Defect Annihilation at Nanocavities in Silicon Durion Ion Irradiation
Applied Physics Letters 77() 4280-4282
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Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment
Journal of Applied Physics 88() 5493-5495
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Ion beam induced dissociation and bubble formation in GaN
Applied Physics Letters 77() 3577-3579
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Imaging Charge Trap Distributions in GaN Using Environmental Scanning Electron Micrsocopy
Applied Physics Letters 77() 1342-1344
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Ion-Beam-Induced Porosity of GaN
Applied Physics Letters 77() 1455-1457
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Nanoindentation of Epitaxial GaN Films
Applied Physics Letters 77() 3373-3375
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Transmission Electron Microscopy Observation of Deformation Microstructure under Spherical Indentation in Silicon
Applied Physics Letters 77() 3749-3751
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Solid-State Formation of Carbon and Boron Nitride Nanotubes
Materials Science Forum 343-346() 63-67
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High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering
Journal of Applied Physics 87() 2736-2741
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Ion Beam Induced Epitaxy Experiments in Silicon under Channeling and Random Alignments
Nuclear Instruments and Methods in Physics Research: Section B 161-163() 505-509
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Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN
Applied Physics Letters 76() 3899-3901
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A solid-state process for formation of boron nitride nanotubes
Applied Physics Letters 74() 2960-2962
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Synthesis of boron nitride nanotubes at low temperatures using reactive ball milling
Chemical Physics Letters 299(3-4)() 260-264
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Increased Dissolution of Ilmenite Induced by High-Energy Ball Milling
Materials Science and Engineering A 271/1-2() 485-490
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Preferential Amorphization at Extended Defects of Self-Ion-Irradiated-Silicon
Physical Review Letters 82, 4() 771-774
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Ultra-Micro-Indentation of Silicon and Compound Semiconductors with Spherical Indenters
Journal of Materials Research 14, 6() 2338-2343
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Characterization of low-temperature PECVD silicon dioxide films
Materials Research Society Symposium Proceedings 555() 197-202
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Thermal fatigue of ion implanted magnesium oxide crystals
Nuclear Instruments and Methods in Physics Research: Section B 148, 1-Apr() 773-777
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Thermal stress resistance of ion implanted sapphire crystals
Nuclear Instruments and Methods in Physics Research: Section B 147, 1-Apr() 221-225

Instability of nanocavities in disordered and amorphous silicon under ion irradiation
Materials Research Society Symposium Proceedings 540() 127-132
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Carbothermic reduction of llmenite (FeTiO3) and rutile (TiO2)
Metallurgical and Materials Transactions B 30, 6() 1075-1082
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Mechanochemical Reactions in the System FETiO3-Si
Journal of Materials Research 13, 12() 3499-4503
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A dlts investigation of the effect of ion mass, fluence and energy on the introduction of a higher-order vacancy cluster in noble gas ion bombarded n-Si
Materials Research Society Symposium Proceedings 540() 121-126
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Structural Changes in Ultra-High-Dose Self-Implanted Crystalline and Amorphous Silicon
Nuclear Instruments and Methods in Physics Research: Section B 148() 268-272
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Mechanochemical synthesis of boron nitride nanotubes
Materials Science Forum () 173-178
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The Role of Oxygen on the Stability of Gettering of Metals to Cavities in Silicon
Applied Physics Letters 75, 16() 2424-2426
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Thermal Fatigue of Ion Implanted Magnesium Oxide Crystals
Nuclear Instruments and Methods in Physics Research: Section B 148() 773-777
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Instability of Nanocavities in Amorphous Silicon
Applied Physics Letters 74, 16() 2313-2315
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Diffusion and Transient Trapping of Metals in Silicon
Physical Review B 59, 11() 7990-7998
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Mass Effects on Regrowth Rates and Activation Energies of Solid-Phase Epitaxy Induced by Ion Beams in Silicon
Physical Review B 59, 23() 15 214-15 224
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Low-Temperature Thermopower in Nanostructured Silver
Applied Physics Letters 75, 1() 136-138
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Mechanochemical Reaction and Formation of an Amorphous Nitride Phase During Ball Milling of Si in NH3
Applied Physics Letters 75, 20() 3111-3113
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Activation Energies for Light Ions in Ion Beam Induced Epitaxial Crystallization
Nuclear Instruments and Methods in Physics Research: Section B 148() 370-374
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The Role of Fe on the Crystallisation of a-Si3N4 from Amorphous Si-N Formed by Ion Implantation
Nuclear Instruments and Methods in Physics Research: Section B 148() 534-539
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Analysis of semiconductors by ion channelling: Applications and pitfalls
Nuclear Instruments and Methods in Physics Research: Section B 136-138() 453-459
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The precipitation of Fe at the Si-SiO2 interface
Journal of Applied Physics 83, 1() 580-584
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Si-implantation activation annealing of GaN up to 1400?C
Journal of Electronic Materials 27, 4() 179-184
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Mechanically alloyed and rapidly quenched Fe-Zr-B-Cu: M?ssbauer investigation
Materials Science Forum 269-272, PART 1() 425-430
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On the nitridation of silicon by low energy nitrogen bombardment
Applied Physics Letters 73, 9() 1287-1289
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Annealing of ion implanted gallium nitride
Applied Physics Letters 72, 10() 1190-1192
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Extended milling of graphite and activated carbon
Carbon 36, 9() 1309-1315

Ion implantation of semiconductors
Materials Science and Engineering A 253, 1-2() 8-15

The amorphization kinetics of GaAs irradiated with Si ions
Journal of Applied Physics 83, 12() 7533-7536

(198 publications)

Patent granted

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A Semiconductor Doping Process
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(1 publications)

Conference paper

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Evaluating carrier lifetimes in laser hyperdoped silicon using terahertz spectroscopy
2018 Conference on Lasers and Electro-Optics, CLEO 2018 ?, ?() 2
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Hyperdoped silicon characterization and photodetectors
Frontiers in Optics, FiO 2017 ?, ?()
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Experimental observation for new polymorphs of silicon formed through ultrafast-laser-induced microexplosion
2014 IEEE International Conference Laser Optics, LO 2014 ?, ?() 1
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Hyperdoped silicon sub-band gap photoresponse for an intermediate band solar cell in silicon
40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ?, ?() 1073-1076
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Selective localised modifications of silicon crystal by ultrafast laser induced micro-explosion
XVIII Laser Applications in Microelectronic and Optoelectronic Manufacturing LAMOM 2013 8607() 1-6
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Evidence of new high-pressure silicon phases in Fs-laser induced confined microexplosion
CLEO: Science and Innovations, CLEO_SI 2013 ?, ?() 2
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Controlled Temperature Indentation of Si to Investigate the Phase Transformations
Australian Institute of Physics Congress (AIP 2012) ?, ?() 1
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Raman study on the phase transformations of the meta-stable phases of Si induced by indentation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 89-90
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Silicon High-Pressure Phases under High Load Nanoindentation
Australian Institute of Physics Congress (AIP 2012) ?, ?() 1
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Deformation of Amorphous Germanium by Nanoindentation
Australian Institute of Physics Congress (AIP 2012) ?, ?() 1
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A New Crystalline Phase of Silicon Formed from Indentation-Induced High-Pressure Phases
Australian Institute of Physics Congress (AIP 2012) ?, ?() 1
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Structural Relaxation of Ion-implanted Amorphous Silicon
Australian Institute of Physics Congress (AIP 2012) ?, ?() 1
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Measuring the Hardness of Silicon
Australian Institute of Physics Congress (AIP 2012) ?, ?() 1
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Strong mid-infrared optical absorption by supersaturated sulfur doping in silicon
International Conference on the Physics of Semiconductors 2010 1399() 51-52
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Electrical properties of Si-XII and Si-III formed by nanoindentation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 105-106
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Comparison between implanted boron and phosphorus in silicon wafers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 225-226
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Effect of oxygen on nanoscale indentation-induced phase transformations in amorphous silicon
2009 MRS Spring Meeting 1185() 1-6
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Point Defect Engineered Si Sub-Bandgap Light-emitting Diodes
Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV 2007 6800() 1-8
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Excimer laser processing of novel materials for optoelectronic and spintronic applications
Photon Processing in Microelectronics and Photonics 6458() 645803
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Indentation-Induced Damage Mechanisms in Germanium
Materials Research Society Meeting Fall 2006 983() 6
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Efficient point defect engineered si light-emitting diode at 1.218 μm
Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science/Conference on Photonic Applications, Systems and Technologies (CLEO/QELS 2007) ?, ?() 1-2
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Some Ion-beam Modification Issues: Ion-induced Amorphisation and Crystallisation of Silicon
Ion Beam Science Symposium 2006 ?, ?() 227-261
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Nanoindentation-Induced Phase Transformation in Silicon
European Society for Neurochemistry Conference (ENS 2006) ?, ?() 46-49
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Implantion-Induced Nanocavities and Au Nanoparticles in Si and Si02
International Conference on Nanoscience and Nanotechnology (ICONN 2006) ?, ?() 130-133
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High-Yield Boron Nitride Bamboo Nanotubes
Annual Condensed Matter and Materials Meeting 2006 ?, ?() 1-3
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Optical Properties of BN Nanotubes
International Conference on Nanoscience and Nanotechnology (ICONN 2006) ?, ?() 64-67
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Production and Processing of Semiconductor Nanocrystals and Nanostructures for Photonic Applications
National Conference and Exhibition on Nanotechnology 2003 ?, ?() 74-80
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Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities
199th Meeting of the Electrochemical Society ?, ?() 147-155
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Interactions of Point Defects and Impurities With Open Volume Defects in Silicon
Materials Research Society Meeting Fall 2000 ?, ?() 02.4.1-02.4.11
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Mechanical Properties of As-Grown and Ion-Beam-Modified GaN Films
Materials Research Society Meeting Fall 2000 ?, ?() Q5.5.1-Q5.5.6
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Ion Beam Damage Processes in GaN
III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) ?, ?() 150-160
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Mechanical Deformation of Crystalline Silicon During Nanoindentation
Materials Research Society Meeting Fall 2000 ?, ?() Q8.10.1-6
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Charge Contrast in SE Images Obtained Using the ESEM
Institute of Physics Conference No 165 (2000) ?, ?() 275-276

(33 publications)

Journal short contribution (non refereed)

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Porosity as a function of stoichiometry and implantation temperature in Ge/Si1-xGex alloys (vol 119, 094303, 2016)
Journal of Applied Physics 121, 4() 2

(1 publications)

Journal short contribution

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John Henry Carver 1926 - 2004
Historical Records of Australian Science 22, 1() 53-79

(1 publications)

Journal article (non-refereed)

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Investigation of Combustion Reactions under Different Milling Conditions
Journal of Metastable and Nanocrystalline Materials 2-6() 79-84

(2 publications)

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