Dr Tuomas Haggrén

Dr Tuomas Haggrén
Position Postdoctoral Fellow
Department Electronic Materials Engineering
Research group Semiconductor optoelectronics and nanotechnology group
Office phone (02) 612 54283
Mobile phone 0482 048 565
Email
Office Leonard Huxley 4 01

Publications

Journal article

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Topical review: Pathways toward cost-effective single-junction III-V solar cells
Journal of Physics D: Applied Physics 55, 14() 1-35
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Electron-Selective Contact for GaAs Solar Cells (DUPLICATION)
ACS Applied Energy Materials 4, 2() 1356-1364
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Thermoelectric Characteristics of InAs Nanowire Networks Directly Grown on Flexible Plastic Substrates
ACS Applied Energy Materials 4, 12() 14727-14734

NEW PUB FOR [Haggren, Tuomas] - [Effect of crystal structure on the Young's modulus of GaP nanowires]
Nanotechnology 32, 38()
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Management of light and scattering in InP NWs by dielectric polymer shell
Nanotechnology 31, 38()
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Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN
Applied Physics Letters 116, 9()
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Direct Growth of Light-Emitting III-V Nanowires on Flexible Plastic Substrates
ACS Nano 14, 6() 7484-7491

NEW PUB FOR [Haggren, Tuomas] - [Hybrid GaAs nanowire-polymer device on glass: Al-doped ZnO (AZO) as transparent conductive oxide for nanowire based photovoltaic applications]
Journal of Crystal Growth 548()

NEW PUB FOR [Haggren, Tuomas] - [InAs-Nanowire-Based Broadband Ultrafast Optical Switch]
Journal of Physical Chemistry Letters 10, 15() 4429-4436

NEW PUB FOR [Haggren, Tuomas] - [Determination of Young’s Modulus of Wurtzite III–V Nanowires by the Methods of Scanning Probe Microscopy]
Surface Investigation X-Ray, Synchrotron and Neutron Techniques 13, 1() 53-55

NEW PUB FOR [Haggren, Tuomas] - [III-V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs]
Scientific Reports 8, 1()

NEW PUB FOR [Haggren, Tuomas] - [Electroluminescent cooling in intracavity light emitters: modeling and experiments]
Optical and Quantum Electronics 50, 1()

I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide
Applied Physics Letters 111, 13()
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Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties
Nano Research 10, 8() 2657-2666

NEW PUB FOR [Haggren, Tuomas] - [Young's Modulus of Wurtzite and Zinc Blende InP Nanowires]
Nano Letters 17, 6() 3441-3446

NEW PUB FOR [Haggren, Tuomas] - [Synthesis and properties of ultra-long InP nanowires on glass]
Nanotechnology 27, 50()
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InP nanowire p-type doping via Zinc indiffusion
Journal of Crystal Growth 451() 18-26
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Influence of surface passivation on electric properties of individual gaas nanowires studied by current–voltage AFM measurements
Lithuanian Journal of Physics 56, 2() 92-101

Lithography-free shell-substrate isolation for core-shell GaAs nanowires
Nanotechnology 27, 27()

NEW PUB FOR [Haggren, Tuomas] - [A technique for large-area position-controlled growth of GaAs nanowire arrays]
Nanotechnology 27, 13()

(20 publications)

Updated:  2 July 2022/ Responsible Officer:  Director, RSPhys/ Page Contact:  Physics Webmaster