Dr Tuomas Haggrén

Position Postdoctoral Fellow
Department Electronic Materials Engineering
Research group Semiconductor optoelectronics and nanotechnology group
Office phone (02) 612 54283
Mobile phone 0482 048 565
Email
Office Physics New 3 13

Publications

Journal article

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Characteristics and Thermal Control of Random and Fabry-Prot Lasing in Nanowire Arrays
ACS Photonics ()
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Strain-Engineered Multilayer Epitaxial Lift-Off for Cost-Efficient III-V Photovoltaics and Optoelectronics
ACS Applied Materials and Interfaces ()
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CuI as a Hole-Selective Contact for GaAs Solar Cells
ACS Applied Materials and Interfaces ()
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Thermoelectric Characteristics of InAs Nanowire Networks Directly Grown on Flexible Plastic Substrates
ACS Applied Energy Materials 4, 12() 14727-14734
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Effect of crystal structure on the Young's modulus of GaP nanowires
Nanotechnology 32, 38()
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Topical review: Pathways toward cost-effective single-junction III-V solar cells [DUPLICATION of u9912193xPUB577]
Journal of Physics D: Applied Physics 55, 14() 1-35
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Topical review: pathways toward cost-effective single-junction IIIV solar cells
Journal of Physics D: Applied Physics 55, 14() 35
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Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN
Applied Physics Letters 116, 9()
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Hybrid GaAs nanowire-polymer device on glass: Al-doped ZnO (AZO) as transparent conductive oxide for nanowire based photovoltaic applications
Journal of Crystal Growth 548() 1-4
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Direct Growth of Light-Emitting III-V Nanowires on Flexible Plastic Substrates
ACS Nano 14, 6() 7484-7491
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Management of light and scattering in InP NWs by dielectric polymer shell
Nanotechnology 31, 38()
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Determination of Young's Modulus of Wurtzite III-V Nanowires by the Methods of Scanning Probe Microscopy
Surface Investigation X-Ray, Synchrotron and Neutron Techniques 13, 1() 53-55
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III-V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs
Scientific Reports 8, 1() 1-9
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Electroluminescent cooling in intracavity light emitters: modeling and experiments
Optical and Quantum Electronics 50, 1() 1-8

I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide
Applied Physics Letters 111, 13()
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Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties
Nano Research 10, 8() 2657-2666
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Synthesis and properties of ultra-long InP nanowires on glass
Nanotechnology 27, 50()

Lithography-free shell-substrate isolation for core-shell GaAs nanowires
Nanotechnology 27, 27()
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Influence of surface passivation on electric properties of individual gaas nanowires studied by currentvoltage AFM measurements
Lithuanian Journal of Physics 56, 2() 92-101
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InP nanowire p-type doping via Zinc indiffusion
Journal of Crystal Growth 451() 18-26
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A technique for large-area position-controlled growth of GaAs nanowire arrays
Nanotechnology 27, 13() 1-6

(21 publications)

Conference paper

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Controling the type of lasing modes in disordered media based on GaAs-AlGaAs nanowires
2021 IEEE Photonics Conference (IPC) ?, ?()
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Photodegradation of surface passivated GaAs nanowires
4th International Conference on Metamaterials and Nanophotonics, METANANO 2019 ?, ?()
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Measurement of the bending of thin inclined nanowires as a method for determining elastic modulus
Scanning Probe Microscopy, 2018 ?, ?()
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Modeling of charge and photon transport in coupled intracavity light emitters
International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) ?, ?() 201-202
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Direct measurement of elastic modulus of InP nanowires with Scanning Probe Microscopy in PeakForce QNM mode
18th International Conference PhysicA.SPb ?, ?()

(5 publications)

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