Dr Sonachand Adhikari

Position	Postdoctoral Fellow
Department	Electronic Materials Engineering
Research group	Semiconductor optoelectronics and nanotechnology group
Office phone	(02) 612 50374
Email
Office	Physics New 3 14

Publications

Publications

Journal article

Adhikari S, Kremer F, Lysevych M, Jagadish C, Tan H
Core-shell GaN/AlGaN nanowires grown by selective area epitaxy
Nanoscale Horizons 8, 4(2023) 530-542

Gopakumar Saraswathyvilasam A, Adhikari S, Gupta B, Balendhran S, Higashitarumizu N, Tournet J, Li L, Javey A, Crozier K, Karuturi S, Jagadish C, Tan H
Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition
Nanotechnology 34, 49(2023) 1-10

Adhikari S, Lee Cheong Lem O, Kremer F, Vora K, Brink F, Lysevych M, Tan H, Jagadish C
Nonpolar Al xGa1?xN/Al yGa1?yN multiple quantum wells on GaN nanowire for UV emission
Nano Research 15, 8(2022) 7670 - 7680

Adhikari S, Lysevych M, Jagadish C, Tan H
Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters
Crystal Growth & Design 22, 9(2022) 5345-5353

Gagrani N, Vora K, Adhikari S, Jiang Y, Jagadish C, Tan H
n-SnOx as a Transparent Electrode and Heterojunction for p-InP Nanowire Light Emitting Diodes
Advanced Optical Materials 10, 11(2022)

Mondal R, Adhikari S, Chatterjee V, Pal S
Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies
Materials Research Bulletin 140(2021) 1-28

Chugh D, Adhikari S, Wong-Leung J, Lysevych M, Jagadish C, Tan H
Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN
Crystal Growth & Design 20, 3(2020) 1811-1819

(7 publications)