Mr Tom Ratcliff

Ratcliff, Tom profile
Department Electronic Materials Engineering
Research group Electronic materials group
Office phone (02) 612 50362
Email
Office Cockcroft 4 41

Publications

Journal article

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Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb2O5/Pt Memristors
ACS Applied Materials and Interfaces 15, 50() 58613 - 58622
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The structure and electronic properties of tetrahedrally bonded hydrogenated amorphous carbon
Applied Physics Letters 122, 18()
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Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid-State Oscillator
Advanced Materials 35, 8() 2208477
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Possible permanent Dirac- to Weyl-semimetal phase transition by ion implantation
Asia Materials NPG 14, 1() 1-8
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Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching
ACS Applied Materials and Interfaces 14, 18() 21270 - 21277
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High Spatial Resolution Thermal Mapping of Volatile Switching in NbOx-Based Memristor Using In Situ Scanning Thermal Microscopy
ACS Applied Materials and Interfaces 14, 25() 29025-29031
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Electric Field- And Current-Induced Electroforming Modes in NbOx
ACS Applied Materials and Interfaces 12, 7() 8422-8428
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The effect of annealing ambient on carrier recombination in boron implanted silicon
Physica Status Solidi: Rapid Research Letters 8, 10() 827-830
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Influence of implantation damage on emitter recombination
Energy Procedia 55() 272-279
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Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence
Journal of Applied Physics 114, 5() 6

(12 publications)

Conference paper

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Ion implanted dielectric films for an improved optical and electronic silicon photovoltaic response
2012 MRS Fall Meeting 1493() 105-110

(1 publications)