Mr Tom Ratcliff

Department Electronic Materials Engineering
Research group Electronic materials group
Office phone (02) 612 50362
Email
Office Cockcroft 4 41

Publications

Journal article

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Possible permanent Dirac- to Weyl-semimetal phase transition by ion implantation
Asia Materials NPG 14, 1() 1-8
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Thermal Conductivity of Amorphous NbOxThin Films and Its Effect on Volatile Memristive Switching
ACS Applied Materials and Interfaces ()
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Engineering the Threshold Switching Response of Nb2O5?Based Memristors by Ti Doping
ACS Applied Materials and Interfaces 13, 2() 2845-2852
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Electric Field- And Current-Induced Electroforming Modes in NbOx
ACS Applied Materials and Interfaces 12, 7() 8422-8428
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Schottky-Barrier-Induced Asymmetry in the Negative-Differential-Resistance Response of Nb/NbOx/Pt Cross-Point Devices
Physical Review Applied 13, 6() 1-10
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The effect of annealing ambient on carrier recombination in boron implanted silicon
Physica Status Solidi: Rapid Research Letters 8, 10() 827-830
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Influence of implantation damage on emitter recombination
Energy Procedia 55() 272-279
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Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence
Journal of Applied Physics 114, 5() 6

(8 publications)

Conference paper

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Ion implanted dielectric films for an improved optical and electronic silicon photovoltaic response
2012 MRS Fall Meeting 1493() 105-110

(1 publications)

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