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Physics databaseMr Tom Ratcliff is a past member of RSPE. Contact details and information may no longer be correct.
Mr Tom Ratcliff
| Department | Electronic Materials Engineering |
|---|---|
| Research group | Electronic materials group |
| Office phone | (02) 612 50362 |
| Office | Cockcroft 4 41 |
Publications
Journal article
Jun Lee W, Adeyemi Salawu Y, Kim H, Jang C, Kim S, Ratcliff T, Elliman R, Yue Z, Wang X, Lee S, Jung M, Rhyee J
Possible permanent Dirac- to Weyl-semimetal phase transition by ion implantation
Asia Materials NPG 14, 1(2022) 1-8
Possible permanent Dirac- to Weyl-semimetal phase transition by ion implantation
Asia Materials NPG 14, 1(2022) 1-8
Nandi S, Nandi S, Das S, Das S, Das S, Das S, Cui Y, Nath S, Cui Y, Nath S, El Helou A, Ratcliff T, El Helou A, Ratcliff T, Nath S, Elliman R, Nath S, Elliman R, Ratcliff T, Ratcliff T, Raad P, Elliman R, Raad P, Elliman R, Elliman R, Raad P, Elliman R, Raad P
Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching
ACS Applied Materials and Interfaces 14, 18(2022) 21270 - 21277
Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching
ACS Applied Materials and Interfaces 14, 18(2022) 21270 - 21277
Das S, Nandi S, Nath S, Ratcliff T, Elliman R
Physical Origin of Negative Differential Resistance in V3 O5 and Its Application as a Solid-State Oscillator
Advanced Materials (2022)
Physical Origin of Negative Differential Resistance in V
Advanced Materials (2022)
Nandi S, Nath S, Das S, Ratcliff T, Elliman R
High Spatial Resolution Thermal Mapping of Volatile Switching in NbOx ?Based Memristor Using In Situ Scanning Thermal Microscopy
ACS Applied Materials and Interfaces 14, 25(2022) 29025-29031
High Spatial Resolution Thermal Mapping of Volatile Switching in NbO
ACS Applied Materials and Interfaces 14, 25(2022) 29025-29031
Nath S, Nandi S, Ratcliff T, Elliman R
Engineering the Threshold Switching Response of Nb2O5?Based Memristors by Ti Doping
ACS Applied Materials and Interfaces 13, 2(2021) 2845-2852
Engineering the Threshold Switching Response of Nb2O5?Based Memristors by Ti Doping
ACS Applied Materials and Interfaces 13, 2(2021) 2845-2852
Nandi S, Nath S, El-Helou A, Li S, Ratcliff T, Uenuma M, Raad P, Elliman R
Electric Field- And Current-Induced Electroforming Modes in NbOx
ACS Applied Materials and Interfaces 12, 7(2020) 8422-8428
Electric Field- And Current-Induced Electroforming Modes in NbOx
ACS Applied Materials and Interfaces 12, 7(2020) 8422-8428
Nath S, Nandi S, El-Helou A, Liu X, Li S, Ratcliff T, Raad P, Elliman R
Schottky-Barrier-Induced Asymmetry in the Negative-Differential-Resistance Response of Nb/NbOx/Pt Cross-Point Devices
Physical Review Applied 13, 6(2020) 1-10
Schottky-Barrier-Induced Asymmetry in the Negative-Differential-Resistance Response of Nb/NbOx/Pt Cross-Point Devices
Physical Review Applied 13, 6(2020) 1-10
Ratcliff T, Fong K, Shalav A, Elliman R, Blakers A
The effect of annealing ambient on carrier recombination in boron implanted silicon
Physica Status Solidi: Rapid Research Letters 8, 10(2014) 827-830
The effect of annealing ambient on carrier recombination in boron implanted silicon
Physica Status Solidi: Rapid Research Letters 8, 10(2014) 827-830
Ratcliff T, Shalav A, Fong K, Elliman R, Blakers A
Influence of implantation damage on emitter recombination
Energy Procedia 55(2014) 272-279
Influence of implantation damage on emitter recombination
Energy Procedia 55(2014) 272-279
Yang X, MacDonald D, Fell A, Shalav A, Xu L, Walter D, Ratcliff T, Franklin E, Weber K, Elliman R
Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence
Journal of Applied Physics 114, 5(2013) 6
Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence
Journal of Applied Physics 114, 5(2013) 6
(10 publications)
Conference paper
Shalav A, Henderson C, Ratcliff T, Thomson A
Ion implanted dielectric films for an improved optical and electronic silicon photovoltaic response
2012 MRS Fall Meeting 1493(2013) 105-110
Ion implanted dielectric films for an improved optical and electronic silicon photovoltaic response
2012 MRS Fall Meeting 1493(2013) 105-110
(1 publications)
Updated: 8 February 2023/ Responsible Officer: Director, RSPhys/ Page Contact: Physics Webmaster
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