Mr Tom Ratcliff

Department	Electronic Materials Engineering
Research group	Electronic materials group
Office phone	(02) 612 50362
Email
Office	Cockcroft 4 41

Publications

Journal article

Salek A, Haberl B, Salek A, Haberl B, Le P, Bradby J, Le P, Bradby J, Ratcliff T, Partridge J, Ratcliff T, Partridge J, Elliman R, Raeber T, Elliman R, Raeber T, Haberl B, Haberl B, Boehler R, Boehler R, Murdoch B, Murdoch B, Bradby J, Bradby J, Ratcliff T, Ratcliff T, Elliman R, Elliman R, McKenzie D, McKenzie D, McCulloch D, McCulloch D
The structure and electronic properties of tetrahedrally bonded hydrogenated amorphous carbon
Applied Physics Letters 122, 18(2023)

Das S, Das S, Das S, Nandi S, Nandi S, Nandi S, Marquez C, Nath S, Marquez C, Nath S, Marquez C, Nath S, Rua A, Ratcliff T, Rua A, Ratcliff T, Rua A, Ratcliff T, Uenuma M, Elliman R, Uenuma M, Elliman R, Uenuma M, Elliman R, Puyoo E, Puyoo E, Puyoo E, Nath S, Nath S, Nath S, Albertini D, Albertini D, Albertini D, Ratcliff T, Baboux N, Ratcliff T, Baboux N, Ratcliff T, Baboux N, Lu T, Elliman R, Lu T, Elliman R, Lu T, Elliman R, Liu Y, Liu Y, Liu Y, Haeger T, Haeger T, Haeger T, Riedl T, Riedl T, Riedl T, Ratcliff T, Ratcliff T, Ratcliff T, Elliman R, Elliman R, Elliman R
Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid-State Oscillator
Advanced Materials 35, 8(2022) 2208477

Jun Lee W, Adeyemi Salawu Y, Kim H, Jang C, Kim S, Ratcliff T, Elliman R, Yue Z, Wang X, Lee S, Jung M, Rhyee J
Possible permanent Dirac- to Weyl-semimetal phase transition by ion implantation
Asia Materials NPG 14, 1(2022) 1-8

Nandi S, Nandi S, Das S, Das S, Das S, Das S, Cui Y, Nath S, Cui Y, Nath S, El Helou A, Ratcliff T, El Helou A, Ratcliff T, Nath S, Elliman R, Nath S, Elliman R, Ratcliff T, Ratcliff T, Raad P, Elliman R, Raad P, Elliman R, Elliman R, Raad P, Elliman R, Raad P
Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching
ACS Applied Materials and Interfaces 14, 18(2022) 21270 - 21277

Nandi S, Nandi S, Puyoo E, Nath S, Puyoo E, Nath S, Nath S, Das S, Nath S, Das S, Albertini D, Ratcliff T, Albertini D, Ratcliff T, Baboux N, Elliman R, Baboux N, Elliman R, Das S, Das S, Ratcliff T, Ratcliff T, Elliman R, Elliman R
High Spatial Resolution Thermal Mapping of Volatile Switching in NbOx-Based Memristor Using In Situ Scanning Thermal Microscopy
ACS Applied Materials and Interfaces 14, 25(2022) 29025-29031

Nath S, Nandi S, Ratcliff T, Elliman R
Engineering the Threshold Switching Response of Nb2O5?Based Memristors by Ti Doping
ACS Applied Materials and Interfaces 13, 2(2021) 2845-2852

Nandi S, Nath S, El-Helou A, Li S, Ratcliff T, Uenuma M, Raad P, Elliman R
Electric Field- And Current-Induced Electroforming Modes in NbOx
ACS Applied Materials and Interfaces 12, 7(2020) 8422-8428

Nath S, Nandi S, El-Helou A, Liu X, Li S, Ratcliff T, Raad P, Elliman R
Schottky-Barrier-Induced Asymmetry in the Negative-Differential-Resistance Response of Nb/NbOx/Pt Cross-Point Devices
Physical Review Applied 13, 6(2020) 1-10

Ratcliff T, Fong K, Shalav A, Elliman R, Blakers A
The effect of annealing ambient on carrier recombination in boron implanted silicon
Physica Status Solidi: Rapid Research Letters 8, 10(2014) 827-830

Ratcliff T, Shalav A, Fong K, Elliman R, Blakers A
Influence of implantation damage on emitter recombination
Energy Procedia 55(2014) 272-279

Yang X, MacDonald D, Fell A, Shalav A, Xu L, Walter D, Ratcliff T, Franklin E, Weber K, Elliman R
Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence
Journal of Applied Physics 114, 5(2013) 6

(11 publications)

Conference paper

Shalav A, Henderson C, Ratcliff T, Thomson A
Ion implanted dielectric films for an improved optical and electronic silicon photovoltaic response
2012 MRS Fall Meeting 1493(2013) 105-110

(1 publications)