Dr Naiyin Wang

Position Postdoctoral Fellow
Department Electronic Materials Engineering
Research group Semiconductor optoelectronics and nanotechnology group
Office phone (02) 612 58159
Email
Office John Carver 4 16E

Publications

Journal article

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Graphdiyne Visible-Light Photodetector with Ultrafast Detectivity
Advanced Optical Materials 9()
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2D Carrier Localization at the Wurtzite-Zincblende Interface in Novel Layered InP Nanomembranes
ACS Photonics 8, 6() 1735-1745
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Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy
Small 17, 21()
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Epitaxially Grown InP Micro-Ring Lasers
Nano Letters 21, 13() 5681-5688
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A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications
Advanced Functional Materials 32, 3()
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Growth Mechanism of InP Nanostructure Arrays by Self-Catalyzed Selective Area Epitaxy: A Deep Understanding of Thermodynamic and Kinetic Theories
Crystal Growth & Design 21, 2() 988-994
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Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers
ACS Nano 15, 5() 9126-9133
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Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays
Nanoscale Horizons 5, 11() 1530-1537
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Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays
Nanoscale Horizons 5, 11() 1530-1537
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Graphdiyne Ink for Ionic Liquid Gated Printed Transistor
Advanced Electronic Materials 6, 7()
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Induced Ferromagnetic Order of Graphdiyne Semiconductors by Introducing a Heteroatom
ACS Central Science 6, 6() 950-958
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Highly regular rosette-shaped cathodoluminescence in GaN self-assembled nanodisks and nanorods
Nano Research 13, 9() 2500-2505
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Shape Engineering of InP Nanostructures by Selective Area Epitaxy
ACS Nano 13, 6() 7261-7269
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Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires
Nanoscale 11, 18() 9207-9215
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The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods
Nanoscale 10, 23() 11205-11210

(15 publications)

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