This project aims to develop high efficiency, cost-effective III-V semiconductor-perovskite tandem solar cells which are flexible and lightweight, while achieving excellent device stability.

In this project, we aim to explore PT-symmetric lasing in III-V semiconductor micro-cavity lasers that are epitaxially grown on their substrates, free from any etching-induced damage. In particular, we aim to demonstrate performance improvements by exploiting some of the unique features of bottom-up grown laser cavities.

In this project, we aim to demonstrate lasing in a bottom-up metasurface device supporting a perturbed symmetry-protected, quasi-BIC mode. The unit cell of the metasurface consists of a pair of InP nanosheet structures that are grown with the selective area epitaxy technique. 

Flexible GaN for applications in wearable and flexible electronics.

Semiconductor nanowires are emerging nano-materials with substantial opportunities for novel photonic and quantum device applications. This project aims at developing a new generation of high performance NW based photodetectors for a wide range of applications.

While there have been numerous demonstrations of planar growth of III-V materials on Si substrates, growing III-V nanostructures directly on Si is not a trivial task. In this project, we aim to demonstrate the direct growth of InP/InAsP light-emitting nanostructures on Si substrates by engineering the III-V/Si interfacial energy. 

Bottom-up fabrication of lasers via epitaxial growth has been emerging as a promising alternative to the conventional top-down fabrication methods. In this project, we aim to demonstrate electrically-injected lasing in InP/InAsP multi-quantum well micro-ring cavities that are grown by the selective area epitaxy technique.

This project aims to develop high efficiency, cost-effective III-V semiconductor-perovskite tandem solar cells which are flexible and lightweight, while achieving excellent device stability.

This project aims to investigate the growth of III-V semiconductors on pre-patterned nanotemplates. By using different shapes and geometries, it is envisaged that these nanostructures will provide novel architectures for advanced, next generation optoelectronic devices.

In this project we aim to design and demonstrate  III-V compound semiconductor based quantum well nanowire light emitting devices with wavelength ranging from 1.3 to 1.6 μm for optical communication applications.

This project aims to demonstrate semiconductor nanowire based infrared avalanche photodetectors (APDs) with ultra-high sensitivity towards single photon detection. By employing the advantages of their unique one-dimensional nanoscale geometry, the nanowire APDs can be engineered to different device architectures to achieve performance superior to their conventional counterparts. This will contribute to the development of next generation infrared photodetector technology enabling numerous emerging fields in modern transportation, communication, quantum computation and information processing.

Experimental and theoretical work on the development of novel nanostructured materials with unusual optical properties. Special attention to our research is the development of tunable and functional nanostructured metamaterials that interact strongly with light. Such materials underpin novel optical technologies ranging from wearable sensors to night-vision devices.

This project aims to investigate the concepts and strategies required to produce electrically injected semiconductor nanowire lasers by understanding light interaction in nanowires, designing appropriate structures to inject current, engineer the optical profile and developing nano-fabrication technologies. Electrically operated nanowire lasers would enable practical applications in nanophotonics.

This project aims to investigate the growth of III-V semiconductors on pre-patterned nanotemplates. By using different shapes and geometries, it is envisaged that these nanostructures will provide novel architectures for advanced, next generation optoelectronic devices.

In this project, we aim to explore PT-symmetric lasing in III-V semiconductor micro-cavity lasers that are epitaxially grown on their substrates, free from any etching-induced damage. In particular, we aim to demonstrate performance improvements by exploiting some of the unique features of bottom-up grown laser cavities.

In this project, we aim to demonstrate lasing in a bottom-up metasurface device supporting a perturbed symmetry-protected, quasi-BIC mode. The unit cell of the metasurface consists of a pair of InP nanosheet structures that are grown with the selective area epitaxy technique. 

Metasurface can the generation and manipulation of polarization-entangled photon pairs at the nanoscale.

The project bridges the fundamental physics of topological phases with nonlinear optics. This promising synergy is expected to unlock advanced functionalities for applications in optical sources, frequency combs, isolators and multiplexers, switches and modulators, both for classical and quantum light. 

This project goal is to investigate, theoretically and experimentally, photonic systems with synthetic dimensionality exceeding the three spatial dimensions, and reveal new opportunities for applications in optical signal switching and sensing in classical and quantum photonics.

Semiconductor nanowires are emerging nano-materials with substantial opportunities for novel photonic and quantum device applications. This project aims at developing a new generation of high performance NW based photodetectors for a wide range of applications.

In this project we aim to design and demonstrate  III-V compound semiconductor based quantum well nanowire light emitting devices with wavelength ranging from 1.3 to 1.6 μm for optical communication applications.

This project aims to demonstrate semiconductor nanowire based infrared avalanche photodetectors (APDs) with ultra-high sensitivity towards single photon detection. By employing the advantages of their unique one-dimensional nanoscale geometry, the nanowire APDs can be engineered to different device architectures to achieve performance superior to their conventional counterparts. This will contribute to the development of next generation infrared photodetector technology enabling numerous emerging fields in modern transportation, communication, quantum computation and information processing.

Experimental and theoretical work on the development of novel nanostructured materials with unusual optical properties. Special attention to our research is the development of tunable and functional nanostructured metamaterials that interact strongly with light. Such materials underpin novel optical technologies ranging from wearable sensors to night-vision devices.

While there have been numerous demonstrations of planar growth of III-V materials on Si substrates, growing III-V nanostructures directly on Si is not a trivial task. In this project, we aim to demonstrate the direct growth of InP/InAsP light-emitting nanostructures on Si substrates by engineering the III-V/Si interfacial energy. 

Bottom-up fabrication of lasers via epitaxial growth has been emerging as a promising alternative to the conventional top-down fabrication methods. In this project, we aim to demonstrate electrically-injected lasing in InP/InAsP multi-quantum well micro-ring cavities that are grown by the selective area epitaxy technique.

This project aims to investigate the concepts and strategies required to produce electrically injected semiconductor nanowire lasers by understanding light interaction in nanowires, designing appropriate structures to inject current, engineer the optical profile and developing nano-fabrication technologies. Electrically operated nanowire lasers would enable practical applications in nanophotonics.

The goal of the project is to understand new physical phenomena arising from quantum and nonlinear optical integration. In the future this research may open doors to new types of computers and simulators with information capacity exceeding the number of elementary particles in the entire universe.

Antennas are at the heart of modern radio and microwave frequency communications technologies. They are the front-ends in satellites, cell-phones, laptops and other devices that make communication by sending and receiving radio waves. This project aims to design analog of optical nanoantennas for visible light for advanced optical communiction. 

Metasurface can the generation and manipulation of polarization-entangled photon pairs at the nanoscale.

This project goal is to investigate, theoretically and experimentally, photonic systems with synthetic dimensionality exceeding the three spatial dimensions, and reveal new opportunities for applications in optical signal switching and sensing in classical and quantum photonics.

The goal of the project is to understand new physical phenomena arising from quantum and nonlinear optical integration. In the future this research may open doors to new types of computers and simulators with information capacity exceeding the number of elementary particles in the entire universe.

Antennas are at the heart of modern radio and microwave frequency communications technologies. They are the front-ends in satellites, cell-phones, laptops and other devices that make communication by sending and receiving radio waves. This project aims to design analog of optical nanoantennas for visible light for advanced optical communiction. 

The project bridges the fundamental physics of topological phases with nonlinear optics. This promising synergy is expected to unlock advanced functionalities for applications in optical sources, frequency combs, isolators and multiplexers, switches and modulators, both for classical and quantum light.