Nanowires are one-dimensional nanostructures with many unique properties such as large surface area-to-volume ratio, very high aspect ratio, and carrier and photon confinement in two dimensions. Nanowire research is a new and emerging field growing at a fast pace. The excitement in this field is due to the unique electronic and optical properties of the nanowires, which could lead to novel devices with superior performance over existing devices to revolutionise our technological world. These include transistors, sensors, light sources/emitters, solar cells, and photodetectors that are used in our everyday life such as mobile phones, large-area displays, solar panels, as well as telecommunication and quantum communication systems. Nanowire devices have all the potentials to make these smaller, faster, cheaper and more energy efficient.
In this project, we will focus on the development of nanowire photodetectors made from III-V compound semiconductors such as GaAs or InP, with numerous potential applications ranging from light sensing, single photon counting, telecommunication to THz imaging. Specific aims of the project include design, fabrication and characterisation of the nanowire photodetectors. The underlying physics of the nanowire photodetector devices will be investigated and understood through a suite of state-of-the-art nanoscale simulation and experimental tools.
Through this project, the students will develop expertise in:
For PhD students 3rd year Condensed matter Physics or Engineering Materials Science/Semiconductor courses are recommended but for undergraduate projects no special requirements.