Ultraviolet (UV) photodetectors capable of detecting wavelength in the range of 200 to 400 nm have significant applications in the field of environmental monitoring, civil as well as military applications. For instance, such UV photodetectors can warn of harmful UV exposure under the sun in our daily lives. GaN with a direct bandgap of 3.4 eV is a potential candidate for UV photodetector. Herein, we will work on GaN-based photodetectors, that can be easily delaminated using a scotch tape from the sapphire substrate and then transferred onto another flexible substrate for applications in wearable and flexible electronics.