Monolithic integration of III-V semiconductor lasers on Si platforms has been the "holy grail" in Si photonics, as it could potentially solve the long-standing light source problem in the technology. While there have been numerous demonstrations of planar growth of III-V materials on Si substrates, growing III-V nanostructures directly on Si is not a trivial task. In this project, we aim to demonstrate the direct growth of InP/InAsP light-emitting nanostructures on Si substrates by engineering the III-V/Si interfacial energy.