Monolithic integration of III-V semiconductor lasers on silicon platforms has been the "holy grail" in Si photonics, as it could resolve the long-standing light source issue in the technology. While planar growth of III-V materials on Si substrates has been widely demonstrated, growing III-V nanostructures directly on Si remains a significant challenge. This project aims to demonstrate the direct growth of InP/InAsP light-emitting nanostructures on Si substrates by engineering the III-V/Si interfacial energy, paving the way for efficient monolithic integration of active photonic components on silicon.