Metasurfaces have emerged as a cornerstone for next-generation optics and optoelectronics. III-V semiconductors are particularly suitable for metamaterials and light-emitters due to their high refractive indices, direct band gaps, and suitable manufacturing processes for thin-film and device fabrication. Metasurface lasers have attracted much interest due to the capability to tailor or even tune the emission. For many practical applications, however, electrical injection is essential. This project aims to create III-V semiconductor metasurface lasers with electrical carrier injection.