This project addresses the LED “green gap” problem by engineering GaP and AlInP nanostructures to adopt the hexagonal wurtzite phase, transforming them into direct bandgap semiconductors. Using the crystal structure transfer technique, it aims to achieve efficient green emission, enabling true white RGB displays, advanced lighting, and next-generation microdisplays.

This project aims to develop high efficiency, cost-effective III-V semiconductor-perovskite tandem solar cells which are flexible and lightweight, while achieving excellent device stability.

Semiconductor nanowires are emerging nano-materials with substantial opportunities for novel photonic and quantum device applications. This project aims at developing a new generation of high performance NW based photodetectors for a wide range of applications.

This project aims to demonstrate electrically injected InP/InAsP micro-ring nanolasers grown by selective area epitaxy. By combining atomically smooth, low-loss cavities with scalable on-chip integration, it addresses a key challenge in nanophotonics. The resulting light sources promise transformative applications in telecommunications, sensing, and next-generation photonic integrated circuits.

This project tackles the long-standing challenge of integrating efficient light sources on silicon by enabling direct epitaxy of InP/InAsP nanostructures. By engineering the III-V/Si interface to overcome lattice and polarity mismatch, it aims to unlock scalable, energy-efficient Si photonics critical for AI data centres and next-generation computing infrastructure.

This project aims to investigate the concepts and strategies required to produce electrically injected semiconductor nanowire lasers by understanding light interaction in nanowires, designing appropriate structures to inject current, engineer the optical profile and developing nano-fabrication technologies. Electrically operated nanowire lasers would enable practical applications in nanophotonics.

This project aims to investigate the growth of III-V semiconductors on pre-patterned nanotemplates. By using different shapes and geometries, it is envisaged that these nanostructures will provide novel architectures for advanced, next generation optoelectronic devices.

This project develops bottom-up, epitaxially-grown nanolaser cavities with atomically smooth facets that overcome scattering losses in top-down fabricated devices. By exploring advanced cavity concepts—including flatband and topological nanolasers—it aims to deliver robust, scalable, and low-threshold light sources, redefining nanolaser technology for next-generation integrated photonic systems.

This project aims to demonstrate semiconductor nanowire based infrared avalanche photodetectors (APDs) with ultra-high sensitivity towards single photon detection. By employing the advantages of their unique one-dimensional nanoscale geometry, the nanowire APDs can be engineered to different device architectures to achieve performance superior to their conventional counterparts. This will contribute to the development of next generation infrared photodetector technology enabling numerous emerging fields in modern transportation, communication, quantum computation and information processing.

In this project we aim to design and demonstrate  III-V compound semiconductor based quantum well nanowire light emitting devices with wavelength ranging from 1.3 to 1.6 μm for optical communication applications.