Semiconductor optoelectronics and nanotechnology group

Department of Electronic Materials Engineering

Book editor

( publications)

, , (Eds.)
Advances in Infrared Photodetectors
Elsevier, USA (2011)
, , , (Eds.)
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011)
, , , , (Eds.)
Zinc Oxide and Related Materials (Volume 957)
Materials Research Society, USA (2007) ?

Book chapter

( publications)

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SEMICONDUCTORS AND SEMIMETALS Future Directions in Silicon Photonics Preface
The Impact, Legitimacy and Effectiveness of EU Counter-Terrorism
Taylor and Francis Inc., United Kingdom (2019) XV-XVIII
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SERIES EDITORS PREFACE
Silicon Photonics, Volume 99
Academic Press, Cambridge, United States (2018) IX-XI
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Optoelectronic Devices
Guide to State-of-the-Art Electron Devices
John Wiley & Sons Inc, UK (2013) 265-274
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ZnO/MgZnO quantum wells
GaN and ZnO-based Materials and Devices
Springer-Verlag Berlin Heidelberg, London (2012) 413-434
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Semiconductors and their nanostructures
Optical Techniques for Solid-State Materials Characterization
CRC Press LLC, Boca Raton Florida USA (2012) 39-78
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Disordering of quantum structures for optoelectronic device integration
Comprehensive Semiconductor Science and Technology
Elsevier, Amsterdam Netherlands (2011) 584-621
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Quantum Dot Infared Photodetectors
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011) 1-24
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Quantum Dot Integrated Optoelectronic Devices
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011) 11.1-11.34
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Voids and Nanocavities in Silicon
Topics in Applied Physics 116: Materials Science with Ion Beams
Springer, Berlin (2010) 113-146
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In(Ga)As/GaAs quantum dots grown by MOCVD for optoelectronic device applications
Self-Assembled Quantum Dots
Springer, New York (2008) 359-403
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A Comparison of the Mechanical properties and the impact of contact induced damage in a- and c- Axis ZnO Single crystals
Zinc Oxide and Related Materials (Volume 957)
Materials Research Society, USA (2007) 213-218

Journal article

( publications)

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A hybrid random laser using dye with self-organized GaN nanorods
Semiconductor Science and Technology 37, 2() 8
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Unique reflection from birefringent uncoated and gold-coated InP nanowire crystal arrays
Optics Express 30, 3() 3172-3182
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Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting
STAR Protocols 3, 1()
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III-V Semiconductor Whispering-Gallery Mode Micro-Cavity Lasers: Advances and Prospects
IEEE Journal of Quantum Electronics ()
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Investigation of light-matter interaction in single vertical nanowires in ordered nanowire arrays
Nanoscale 14, 9() 3527-3536
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Topical review: Pathways toward cost-effective single-junction III-V solar cells
Journal of Physics D: Applied Physics 55, 14()

Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride
Nature Communications 13, 1()
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Large area van der Waals epitaxy of IIVI CdSe thin films for flexible optoelectronics and full-color imaging
Nano Research 15, 1() 368?¢â?¬â??376
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Direct solar to hydrogen conversion enabled by silicon photocathodes with carrier selective passivated contacts
Sustainable Energy & Fuels 6, 2() 349-360
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A High-Efficiency Wavelength-Tunable Monolayer LED with Hybrid Continuous-Pulsed Injection
Advanced Materials 33, 29()
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Slowing Hot-Electron Relaxation in Mix-Phase Nanowires for Hot-Carrier Photovoltaics
Nano Letters 21, 18() 7761-7768
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Direct observation and manipulation of hot electrons at room temperature
National Science Review 8, 9() 1-9
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Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy
Small 17, 21()
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In situ W/O Co-doped hollow carbon nitride tubular structures with enhanced visible-light-driven photocatalytic performance for hydrogen evolution
International Journal of Hydrogen Energy 46, -() 234-246
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Epitaxially Grown InP Micro-Ring Lasers
Nano Letters 21, 13() 5681-5688
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Controlled growth of porous oxygen-deficient NiCo2O4 nanobelts as high-efficiency electrocatalysts for oxygen evolution reaction
Catalysis Science and Technology 11, 1() 264-271
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Controlled growth of porous oxygen-deficient NiCo2O4 nanobelts as high-efficiency electrocatalysts for oxygen evolution reaction
Catalysis Science and Technology 11, 1() 264-271
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Selective area epitaxy of III-V nanostructure arrays and networks: Growth, applications, and future directions
Applied Physics Reviews 8, 2() 1-25
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Ultrathin HfO2passivated silicon photocathodes for efficient alkaline water splitting
Applied Physics Letters 119, 19()
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A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications
Advanced Functional Materials 32, 3()
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Growth Mechanism of InP Nanostructure Arrays by Self-Catalyzed Selective Area Epitaxy: A Deep Understanding of Thermodynamic and Kinetic Theories
Crystal Growth & Design 21, 2() 988-994
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Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers
ACS Nano 15, 5() 9126-9133
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Self-Powered InP Nanowire Photodetector for Single-Photon Level Detection at Room Temperature
Advanced Materials 33, 49() 9
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Two-dimensional materials for light emitting applications: Achievement, challenge and future perspectives
Nano Research 14, 6() 1912-1936
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Infrared upconversion imaging in nonlinear metasurfaces
Advanced Photonics 3, 3()
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Nonlinear Talbot self-healing in periodically poled LiNbO3 crystal [Invited]
Chinese Optics Letters 19, 6()
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Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires
Scientific Reports 11, 1()
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Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications
Nanoscale Horizons 6, 7() 559-567
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Role of defects and grain boundaries in the thermal response of wafer-scale hBN films
Nanotechnology 32, 7()
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Designed Construction of SrTiO3/SrSO4/Pt Heterojunctions with Boosted Photocatalytic H2 Evolution Activity
Chemistry, A European Journal 27, 25() 7300?¢â?¬â??7306
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Designed Construction of SrTiO3/SrSO4/Pt Heterojunctions with Boosted Photocatalytic H-2 Evolution Activity
Chemistry, A European Journal 27, 25() 7300-7306
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Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires
Nano Research ()
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Optical Induction and Erasure of Ferroelectric Domains in Tetragonal PMN-38PT Crystals
Advanced Optical Materials ()

Improving our Peer Review Process-Editorial
Applied Physics Reviews 8, 4()

Spatially dense integration of micron-scale devices from multiple materials on a single chip via transfer-printing
Optical Materials Express 11, 10 October()

Special issue in honor of the 70th birthday of Professor J. Gary Eden
Progress in Quantum Electronics ()
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Recent Advances in Materials Design Using Atomic Layer Deposition for Energy Applications
Advanced Functional Materials ()
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Semiconductor Nanowire Arrays for High-Performance Miniaturized Chemical Sensing
Advanced Functional Materials ()
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Author Correction: Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires (Scientific Reports, (2021), 11, 1, (21378), 10.1038/s41598-021-00855-w)
Scientific Reports 11, 1()
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Optical and radiative characterisation of alumina-silica based ceramic materials for high-temperature solar thermal applications
Journal of Quantitative Spectroscopy & Radiative Transfer 272() 1-11
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Bidirectional photocurrent in pn heterojunction nanowires
Nature Electronics 4, 9() 645-652
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Thermodynamic properties of metastable wurtzite InP nanosheets
Journal of Physics D: Applied Physics 54, 50() 1-9
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Nonlinear detour phase holography
Nanoscale 13, 4() 2693-2702
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Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging
Nano Letters 21() 7388-7395
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Combined Bulk and Surface Passivation in Dimensionally Engineered 2D-3D Perovskite Films via Chlorine Diffusion
Advanced Functional Materials 31, 46()
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Noble-Metal-Free Multicomponent Nanointegration for Sustainable Energy Conversion
Chemical Reviews 121, 17() 10271?¢â?¬â??10366
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Nanomechanical behavior of single taper-free GaAs nanowires unravelled by in-situ TEM mechanical testing and molecular dynamics simulation
Materials Science and Engineering A 806()
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Integration of nickel phosphide nanodot-enriched 3D graphene-like carbon with carbon fibers as self-supported sulfur hosts for advanced lithium sulfur batteries
Electrochimica Acta 382()
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3D Tungsten Disulfide/Carbon Nanotube Networks as Separator Coatings and Cathode Additives for Stable and Fast Lithium-Sulfur Batteries
ACS Applied Materials and Interfaces 13, 38() 45547-45557
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Manipulating Intermediates at the Au-TiO2 Interface over InP Nanopillar Array for Photoelectrochemical CO2 Reduction
ACS Catalysis 11, 18() 11416-11428
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Lasing from InP Nanowire Photonic Crystals on InP Substrate
Advanced Optical Materials 9, 2001745()
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Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride
Nature Materials 20() 321-328
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Tunable Synthesis of 3D Niobium Oxynitride Nanosheets for Lithium-Ion Hybrid Capacitors with High Energy/Power Density
ACS Sustainable Chemistry & Engineering 9, 43() 14569-14578
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Controlled Cracking for Large-Area Thin Film Exfoliation: Working Principles, Status, and Prospects
ACS Applied Electronic Materials 3, 1() 145-162
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Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting
iScience 24, 8()
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Modeling and Characterization of an MBE-Grown Concentrator P-N GaSb Solar Cells Using a Pseudo-3D Model
IEEE Journal of Photovoltaics 11, 4() 1032-1039
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Efficient and stable wide bandgap perovskite solar cells through surface passivation with long alkyl chain organic cations
Journal of Materials Chemistry A 9, 34() 18454?¢â?¬â??18465
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Experimental and theoretical research on second harmonic optical vortex generated by laser inscribed 3D holograms
International Journal of Infrared and Millimeter Waves 40, 1() 102-107
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Localized Ferroelectric Domains via Laser Poling in Monodomain Calcium Barium Niobate Crystal
Laser and Photonics Reviews 15, 9() 1-7
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Graphdiyne Visible-Light Photodetector with Ultrafast Detectivity
Advanced Optical Materials 9()
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Surface-Tailored InP Nanowires via Self-Assembled Au Nanodots for Efficient and Stable Photoelectrochemical Hydrogen Evolution
Nano Letters 21, 16() 6967-6974
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Redox Performance of Ceria-Vanadia Mixed-Phase Reticulated Porous Ceramics for Solar Thermochemical Syngas Production
Energy and Fuels 35, 20() 16791-16798
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Nanoscale localized contacts for high fill factors in polymer-passivated perovskite solar cells
Science 371, 6527() 390-395
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Light Absorption in Nanowire Photonic Crystal Slabs and the Physics of Exceptional Points: The Shape Shifter Modes
Sensors 21, 16() 1-10
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Narrow-Bandgap InGaAsP Solar Cell with TiO2 Carrier-Selective Contact
Physica Status Solidi: Rapid Research Letters 15, 11()
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2D Carrier Localization at the Wurtzite-Zincblende Interface in Novel Layered InP Nanomembranes
ACS Photonics 8, 6() 1735-1745
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Cyclic oxygen exchange capacity of Ce-doped V2O5 materials for syngas production: Via high-temperature thermochemical-looping reforming of methane
RSC Advances 11, 37() 23095-23104
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Experimental demonstration of vanadium-doped nanostructured ceria for enhanced solar thermochemical syngas production
Nano Energy 81()
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Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins
ACS Nano 15, 4() 7226?¢â?¬â??7236
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Stable, multi-mode lasing in the strong localization regime from InP random nanowire arrays at low temperature
Optica 8, 9() 1160-1166
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Controlling the lasing modes in random lasers operating in the Anderson localization regime
Optics Express 29, 21() 33548-33557
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Electron-Selective Contact for GaAs Solar Cells
ACS Applied Energy Materials 4() 1356-1364
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Electron-Selective Contact for GaAs Solar Cells (DUPLICATION)
ACS Applied Energy Materials 4, 2() 1356-1364
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Passivation of InP solar cells using large area hexagonal-BN layers
npj 2D Materials and Applications 5() 1-8
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Unraveling the influence of CsCl/MACl on the formation of nanotwins, stacking faults and cubic supercell structure in FA-based perovskite solar cells
Nano Energy 87() 1-12
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Concentration-Dependent Solar Thermochemical CO2/H2O Splitting Performance by Vanadia-Ceria Multiphase Metal Oxide Systems
Research 2020() 1-12
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Forward and Backward Switching of Nonlinear Unidirectional Emission from GaAs Nanoantennas
ACS Nano 14() 1379-1389
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Structural Rearrangement in LSM Perovskites for Enhanced Syngas Production via Solar Thermochemical Redox Cycles
ACS Catalysis 10, 15() 8263-8276
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Rational Design of Oxygen Deficiency-Controlled Tungsten Oxide Electrochromic Films with an Exceptional Memory Effect
ACS Applied Materials and Interfaces 12, 29() 32658-32665
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High-throughput electrical characterization of nanomaterials from room to cryogenic temperatures
ACS Nano 14, 11() 15293-15305
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Enhancing the Antibacterial Performance of Titanium Dioxide Nanofibers by Coating with Silver Nanoparticles
ACS Applied Nano Materials 3, 6() 5743-5751
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Fabrication of WO3/TiO2 core-shell nanowire arrays: Structure design and high electrochromic performance
Electrochimica Acta 330, 0()
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Hole and Electron Effective Masses in Single InP Nanowires with a Wurtzite-Zincblende Homojunction
ACS Nano 14, 9() 11613-11622
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III-V Semiconductor Materials for Solar Hydrogen Production: Status and Prospects
ACS Energy Letters 5, 2() 611-622
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Solution-Processed Electron-Selective Contacts Enabling 21.8% Efficiency Crystalline Silicon Solar Cells
RRL Solar 4, 12()
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Induced Ferromagnetic Order of Graphdiyne Semiconductors by Introducing a Heteroatom
ACS Central Science 6, 6() 950-958
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Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes
Nano Energy 71()
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Three-dimensional ordered macroporous TiO2-TaOxNy heterostructure for photoelectrochemical water splitting
Journal of Physical Chemistry C 124, 44() 24135-24144
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Carrier dynamics and recombination mechanisms in InP twinning superlattice nanowires
Optics Express 28, 11() 16795-16804
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Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays
Nanoscale Horizons 5, 11() 1530-1537
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Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays
Nanoscale Horizons 5, 11() 1530-1537
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Earth-Abundant Amorphous Electrocatalysts for Electrochemical Hydrogen Production: A Review
Advanced Energy & Sustainability Research 2, 3() 1-27
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Graphdiyne Ink for Ionic Liquid Gated Printed Transistor
Advanced Electronic Materials 6, 7()
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Surface-States-Modulated High-Performance InAs Nanowire Phototransistor
Journal of Physical Chemistry Letters 11, 15() 6413-6419
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Highly regular rosette-shaped cathodoluminescence in GaN self-assembled nanodisks and nanorods
Nano Research 13, 9() 2500-2505
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Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts
IEEE Journal of Photovoltaics 10, 6() 1657-1666
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Non-epitaxial carrier selective contacts for III-V solar cells: A review
Applied Materials Today 18()
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Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap
ACS Applied Materials and Interfaces 12, 32() 36380-36388
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Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts
IEEE Journal of Photovoltaics 10, 6() 57-66
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Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
Nanoscale 12, 39() 20317-20325
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Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires
Frontiers in Chemistry 8()
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Characterization, Selection, and Microassembly of Nanowire Laser Systems
Nano Letters 20, 3() 1862-1868
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Stable Electron-Selective Contacts for Crystalline Silicon Solar Cells Enabling Efficiency over 21.6%
Advanced Functional Materials 30, 50()
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Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum ?-Ga2O3 on sapphire
Applied Surface Science 513()
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Management of light and scattering in InP NWs by dielectric polymer shell
Nanotechnology 31, 38()
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Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy
Nano Research 13, 6() 1586-1591
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Electrical Properties of Compact Drop-Casted Cu2SnS3 Films
Journal of Electronic Materials 49, 11() 6403-6409
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Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN
Applied Physics Letters 116, 9()
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Correlative Study of Enhanced Excitonic Emission in ZnO Coated with Al Nanoparticles using Electron and Laser Excitation
Scientific Reports 10()
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The role of surface depletion layer effects on the enhancement of the UV emission in ZnO induced by a nanostructured Al surface coating
Applied Surface Science 504()
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Enhancement of the UV emission from gold/ZnO nanorods exhibiting no green luminescence
Optical Materials Express 10, 6() 1476-1487
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High Efficiency Perovskite-Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite
Advanced Energy Materials 10, 9() 1-15
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Temperature and Size Effect on the Electrical Properties of Monolayer Graphene based Interconnects for Next Generation MQCA based Nanoelectronics
Scientific Reports 10, 1()
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Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN
Crystal Growth & Design 20, 3() 1811-1819
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Strain distribution in wrinkled hBN films
Solid State Communications 310()
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Over 17% Efficiency Stand-Alone Solar Water Splitting Enabled by Perovskite-Silicon Tandem Absorbers
Advanced Energy Materials 10, 28() 1-9
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Cathodoluminescence visualisation of local thickness variations of GaAs/AlGaAs quantum-well tubes on nanowires
Nanotechnology 31, 42() 1-10
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Direct Growth of Light-Emitting III-V Nanowires on Flexible Plastic Substrates
ACS Nano 14, 6() 7484-7491
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Nonlinear Volume Holography in 3D Nonlinear Photonic Crystals
Laser and Photonics Reviews 14, 11()
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Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors
Advanced Materials 32, -() 1-10
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Interlayer bound wannier excitons in germanium sulfide
Materials 13, 16() 1-11
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Insights into Twinning Formation in Cubic and Tetragonal Multi-cation Mixed-Halide Perovskite
ACS Materials Letters 2, 4() 415-424
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Three-dimensional cross-nanowire networks recover full terahertz state
Science 368, 6490() 510-513
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Light Absorption and Recycling in Hybrid Metal Halide Perovskite Photovoltaic Devices
Advanced Energy Materials 10, 10()
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An adaptive volumetric flux boundary condition for lattice Boltzmann methods
Computers and Fluids 210() 1-8
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Metal-organic framework-derived porous Cu2O/Cu@C core-shell nanowires and their application in uric acid biosensor
Applied Surface Science 506()
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Polarization-Independent Indium Phosphide Nanowire Photodetectors
Advanced Optical Materials 8, 17() 8
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Nonlinear Volume Holography in 3D Nonlinear Photonic Crystals
Laser and Photonics Reviews 14, 11()
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Enhancement of the photoelectrochemical water splitting by perovskite BiFeO3 via interfacial engineering
Solar Energy 202() 198-203
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Smart optically induced nonlinear photonic crystals for frequency conversion and control
Applied Physics Letters 116()
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In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse
Nanotechnology 31, 24()
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Discretization limits of lattice-Boltzmann methods for studying immiscible two-phase flow in porous media
International Journal for Numerical Methods in Fluids 92() 1162-1197
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Review on III-V semiconductor single nanowire-based room temperature infrared photodetectors
Materials 13, 6()
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Carbon-Coated Self-Assembled Ultrathin T-Nb2O5 Nanosheets for High-Rate Lithium-Ion Storage with Superior Cycling Stability
ACS Applied Energy Materials 3, 12() 12037?¢??â??12045
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Ferroelectric-Driven Exciton and Trion Modulation in Monolayer Molybdenum and Tungsten Diselenides
ACS Nano 13, 5() 5335-5343
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Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices
Scientific Reports 9, 0()
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Designed growth of WO3/PEDOT core/shell hybrid nanorod arrays with modulated electrochromic properties
Chemical Engineering Journal 355() 942-951
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Nanosails Showcasing Zn3As2 as an Optoelectronic-Grade Earth Abundant Semiconductor
Physica Status Solidi: Rapid Research Letters 13, 7() 1-5
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Crystalline WO3 nanowires array sheathed with sputtered amorphous shells for enhanced electrochromic performance
Applied Surface Science 498()
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Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy
Physical Review B 99, 16() 1-7
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Hydrogenation of Phosphorus-Doped Polycrystalline Silicon Films for Passivating Contact Solar Cells
ACS Applied Materials and Interfaces 11, 5() 5554-5560
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Shape Engineering of InP Nanostructures by Selective Area Epitaxy
ACS Nano 13, 6() 7261-7269
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Wavelength-tunable InAsP quantum dots in InP nanowires
Applied Physics Letters 115, 5() 1-5
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Engineering III-V Semiconductor Nanowires for Device Applications
Advanced Materials 32, 18() 1904359
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Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes
Nano Letters 19, 6() 3821-3829
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Exploiting defects in TiO2 inverse opal for enhanced photoelectrochemical water splitting
Optics Express 27, 2() 761-773
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Broadband Metamaterial Absorbers
Advanced Optical Materials 7, 3() 1-32
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Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission
Journal of Spectroscopy and Dynamics 13, 11() 13492-13500
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Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires
Nanoscale 11, 18() 9207-9215
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Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire
ACS Nano 13, 3() 3492-3499
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Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory
ACS Applied Electronic Materials 1, 9() 1825-1831
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Tailoring Second-Harmonic Emission from (111)-GaAs Nanoantennas
Nano Letters 19, 6() 3905-3911
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Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy
Nano Letters 19, 7() 4666-4677
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Resonant harmonic generation in AlGaAs nanoantennas probed by cylindrical vector beams
Nanoscale 11, 4() 1745-1753
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Tailoring directional scattering of second-harmonic generation from (111)-GaAs nanoantennas
Proceedings of SPIE - International Society for Optical Engineering 11200()
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Broadband and thermally stable tungsten boride absorber
Journal of the Optical Society of America B 36, 10() 2744-2749
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Electrospun Manganese-Based Perovskites as Efficient Oxygen Exchange Redox Materials for Improved Solar Thermochemical CO 2 Splitting
ACS Applied Energy Materials 2, 4() 2494-2505
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Damage analysis of a perfect broadband absorber by a femtosecond laser
Scientific Reports 9, 15880() 1-8
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Axial p-n junction design and characterization for InP nanowire array solar cells
Progress in Photovoltaics: Research and Applications 27, 3() 237-244
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Compositional Varied Core-Shell InGaP Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Nano Letters 19, 6() 3782-3788
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Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires
Nano Letters 19, 11() 8262-8269
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Effect of Sn Addition on Epitaxial GaAs Nanowire Grown at Different Temperatures in Metal-Organic Chemical Vapor Deposition
Crystal Growth & Design 19, 9() 5314-5319
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Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures
Nanoscale Research Letters 14()
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Large-Area Hexagonal Boron Nitride for Surface Enhanced Raman Spectroscopy
Advanced Materials Technologies 4, 8() 1-7
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Band alignment and band bending at a-Ga2O3/ZnO n-n isotype hetero-interface
Applied Physics Letters 115, 20() 1-5
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InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting
ACS Applied Materials and Interfaces 11, 28() 25236-25242
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Interrogation of the Effect of Polymorphism of a Metal-Organic Framework Host on the Structure of Embedded Pd Guest Nanoparticles
ChemPhysChem 20, 5() 745-751
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Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing
Nano Letters 19, 1() 362-368
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Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization
Nanoscale Advances 1, 11() 4393-4397
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Nano Letters 19, 8() 5062-5069
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Four-Dimensional Probing of Phase-Reaction Dynamics in Au/GaAs Nanowires
Nano Letters 19, 2() 781-786
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A Tale of Two Tantalum Borides as Potential Saturable Absorbers for Q-Switched Fiber Lasers
IEEE Photonics Journal 11, 3() 1-12
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Ultrathin Ta 2 O 5 electron-selective contacts for high efficiency InP solar cells
Nanoscale 11, 15() 7497-7505
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High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture
ACS Nano 13, 10() 12015-12023
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15% Efficiency Ultrathin Silicon Solar Cells with Fluorine-Doped Titanium Oxide and Chemically Tailored Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) as Asymmetric Heterocontact
ACS Nano 13, 6() 6356-6362
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Introduction of TiO2 in CuI for Its Improved Performance as a p-Type Transparent Conductor
ACS Applied Materials and Interfaces 11, 27() 24254-24263
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IEEE Journal of Photovoltaics 9, 4() 980-991
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Understanding the Chemical and Structural Properties of Multiple-Cation Mixed Halide Perovskite
Journal of Physical Chemistry C 123, 43() 26718-26726
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Influence of Ni, Ti and NiTi alloy nanoparticles on hydrothermally grown ZnO nanowires for photoluminescence enhancement
Journal of Alloys and Compounds 770() 1119-1129
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Asian Journal of Physics 28, 7-9() 719-746
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High Fluence Chromium and Tungsten Bowtie Nano-antennas
Scientific Reports 9, 1()
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On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire
Applied Physics Letters 115, 18() 1-5
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Nano Letters 19, 7() 4490-4497
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Nonlinear wavefront shaping with optically induced three-dimensional nonlinear photonic crystals
Nature Communications 10()
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Proceedings of SPIE - International Society for Optical Engineering 11200()
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Exceptional silicon surface passivation by an ONO dielectric stack
Solar Energy Materials and Solar Cells 189() 245-253
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Solution-Processed InAs Nanowire Transistors as Microwave Switches
Advanced Electronic Materials 5, 1() 1-8
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Three-leaf dart-shaped single-crystal BN formation promoted by surface oxygen
Applied Physics Letters 113, 16() 5
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Tantalum Oxide Electron-Selective Heterocontacts for Silicon Photovoltaics and Photoelectrochemical Water Reduction
Journal of Environmental Chemical Engineering 3, 1() 125-131
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Advanced Functional Materials 28, 18() 8
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Three-dimensional nonlinear photonic crystal in ferroelectric barium calcium titanate
Nature Photonics 12, 10() 591-595
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Nano Letters 18, 6() 3414-3420
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Crystal plasticity in fusion zone of a hybrid laser welded Al alloys joint: From nanoscale to macroscale
Materials and Design 160() 313-324
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Journal of Physics D: Applied Physics 51, 28() 15
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Radial Growth Evolution of InGaAs/InP Multi Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy
ACS Nano 12, 10() 10374-10382
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Giant optical pathlength enhancement in plasmonic thin film solar cells using core-shell nanoparticles
Journal of Physics D: Applied Physics 51, 29() 8
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Efficient and Layer-Dependent Exciton Pumping across Atomically Thin Organic?Inorganic Type-I Heterostructures
Advanced Materials 30, 40() 1-8
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The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods
Nanoscale 10, 23() 11205-11210
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IEEE Journal of Selected Topics in Applied Earth Observations and Remote Sensing 24, 6() 1-3
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High-Efficiency Monolayer Molybdenum Ditelluride Light-Emitting Diode and Photodetector
ACS Applied Materials and Interfaces 10, 50() 43291-43298
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Temperature effects in contacts between a metal and a semiconductor nanowire near the degenerate doping
Nanotechnology 29, 16() 13
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Preparation of V2O5 dot-decorated WO3 nanorod arrays for high performance multi-color electrochromic devices
Journal of Materials Chemistry C: materials for optical and electronic devices 6, 45() 12206-12216
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Distinguishing cap and core contributions to the photoconductive terahertz response of single gaas based coreshellcap nanowire detectors [Apvalkalo ir erdies ind?li? atskyrimas teraherciniame gaas erdies-kevalo-apvalkalo tipo vieno nanolaido detektoriaus f
Lithuanian Journal of Physics 58, 1() 15-23
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Mechanically-stacked perovskite/CIGS tandem solar cells with efficiency of 23.9% and reduced oxygen sensitivity
Energy and Environmental Science 2, 2018() 394-406
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Identification and modulation of electronic band structures of single-phase ?-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy
Applied Physics Letters 113, 4() 1-6
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Photoelectrochemical studies of InGaN/GaN MQW photoanodes
Nanotechnology 29, 4() 8
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2D Materials 5, 4() 1-10
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Interaction Between Proppant Compaction and Single-/Multiphase Flows in a Hydraulic Fracture
SPE Journal 23, 4() 1290-1303
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The effect of Sn addition on GaAs nanowire grown by vapor-liquid-solid growth mechanism
Nanotechnology 29, 46() 1-8
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Direct-coated Cu2SnS3 films from molecular solution inks for solar photovoltaics
Materials Science in Semiconductor Processing 88() 120-126
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IEEE Photonics Technology Letters 30, 1() 11-14
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IEEE Photonics Technology Letters 30, 1() 11-14
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Advances in Water Resources 121() 32-43
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Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer
Journal of Physics D: Applied Physics 51, 39() 1-9
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Perovskite Photovoltaic Integrated CdS/TiO2 Photoanode for Unbiased Photoelectrochemical Hydrogen Generation
ACS Applied Materials and Interfaces 10, 28() 23766-23773
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CdS/TiO2 photoanodes via solution ion transfer method for highly efficient solar hydrogen generation
Nano Futures 2, 1() 8
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Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires
Nanotechnology 29, 22() 1-10
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I E T Optoelectronics 12, 1() 30-35
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Advanced Materials Technologies 3, 9() 12
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ACS Applied Materials and Interfaces 10, 35() 29786-29794
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Nanoscale 10, 5() 2588-2595
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Lithuanian Journal of Physics 58, 1() 15-23
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Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance
Progress in Natural Science: Materials International 28, 2() 178-182
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Tailored Emission Properties of ZnTe/ZnTe:O/ZnO Core-Shell Nanowires Coupled with an Al Plasmonic Bowtie Antenna Array
ACS Nano 12, 7() 7327-7334
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Sub-Bandgap Luminescence from Doped Polycrystalline and Amorphous Silicon Films and Its Application to Understanding Passivating-Contact Solar Cells
ACS Applied Energy Materials 1, 11() 6619-6625
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Nano Futures 2, 035004()
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ACS Applied Materials and Interfaces 10, 15() 12781-12789
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Optics Express 26, 7() 8628-8633
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Photo-assisted synthesis of coaxial-structured polypyrrole/electrochemically hydrogenated TiO2 nanotube arrays as a high performance supercapacitor electrode
RSC Advances 8, 24() 13393-13400
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Electrochemical hydrogenation of mixed-phase TiO2 nanotube arrays enables remarkably enhanced photoelectrochemical water splitting performance
Science Bulletin 63, 3() 194-202
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Tuning the morphology and structure of disordered hematite photoanodes for improved water oxidation: A physical and chemical synergistic approach
Nano Energy 53() 745-752
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Direct observation of the impurity gettering layers in polysilicon-based passivating contacts for silicon solar cells
ACS Applied Energy Materials 1() 2275-2282
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Advanced Electronic Materials 3, 2() 1-6
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Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering
Journal of Applied Physics 121, 1() 8
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Inverted Hysteresis in CH3NH3PbI3 Solar Cells: Role of Stoichiometry and Band Alignment
Journal of Physical Chemistry Letters 8, 12() 2672-2680
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The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors
Nanotechnology 28, 45() 454001 8
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Physica Status Solidi: Rapid Research Letters 11, 11() 6
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A Terahertz Controlled-NOT Gate Based on Asymmetric Rotation of Polarization in Chiral Metamaterials
Advanced Optical Materials 5, 18() 1700108 7
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Semiconductors and Semimetals 97() 289-313
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3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Advanced Materials 29, 31() 1-8
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Strong Amplified Spontaneous Emission from High Quality GaAs1-xSbx Single Quantum Well Nanowires
Journal of Physical Chemistry C 121, 15() 8636-8644
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Journal of Physical Chemistry C 121, 15() 8636-8644
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Journal of Physical Chemistry C 121, 30() 16650-16656
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Nano Letters 17, 6() 3914-3918
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Advanced Materials 29, 31() 1-8
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Nanotechnology 28, 12() 9
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Large-scale statistics for threshold optimization of optically pumped nanowire lasers
Nano Letters 17, 8() 4860-4865
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Engineering the Photoresponse of InAs Nanowires
ACS Applied Materials and Interfaces 9, 50() 43993-44000
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Journal of Physics D: Applied Physics 50, 12() 125101-125108
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An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires
Nano Letters 17, 4() 2603-2610
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Choice of Polymer Matrix for a Fast Switchable III-V Nanowire Terahertz Modulator
MRS Advances 2, 28() 1475-1480
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Nano Research 10, 2() 672-682
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ACS Applied Materials and Interfaces 9, 3() 2606-2615
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Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry
Nano Letters 17, 2() 827-833
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Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy
PNAS - Proceedings of the National Academy of Sciences of the United States of America 114, 49() 12876-12881
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InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 m wavelength range
Nanoscale 9, 36() 13554-13562
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Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires
Physical Review B 95, 4()
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Indian Journal of Pure & Applied Physics 55, 5() 333-338
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ECS Journal of Solid State Science and Technology 6, 8() 122-126
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Engineering Highly Interconnected Neuronal Networks on Nanowire Scaffolds
Nano Letters 17, 6() 3369-3375
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Integration of Semiconductor Nanowire Lasers with Polymeric Waveguide Devices on a Mechanically Flexible Substrate
Nano Letters 17, 10() 5990-5994
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Excited State Biexcitons in Atomically Thin MoSe2
ACS Nano 11, 7() 7468-7475
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Extreme absorption enhancement in ZnTe:O/ZnO intermediate band core-shell nanowires by interplay of dielectric resonance and plasmonic bowtie nanoantennas
Scientific Reports 7, 1() 7503-7503
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Nanoscale 9, 5() 2059-2067
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Improved photoelectrochemical performance of GaN nanopillar photoanodes
Nanotechnology 28, 15()
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Electrochemical hydrogenated TiO2 nanotube arrays decorated with 3D cotton-like porous MnO2 enables superior supercapacitive performance
RSC Advances 7, 50() 31512-31518
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Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors
Nanotechnology 28, 12() 9
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Integration of bow-tie plasmonic nanoantennas on tapered fibers
Optics Express 25, 8() 8986-8996
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The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires
Journal of Physics D: Applied Physics 50, 22()
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Nano Letters 16, 3() 1911-1916
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Structural transition, subgap states, and carrier transport in anion-engineered zinc oxynitride nanocrystalline films
Applied Physics Letters 109, 2() 1-5
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Single nanowire green InGaN/GaN light emitting diodes
Nanotechnology 27, 43() 1-7
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Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating
Nano Energy 28, -() 106-114
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Transfer Printing of Semiconductor Nanowires with Lasing Emission for Controllable Nanophotonic Device Fabrication
ACS Nano 10, 4() 3951-3958
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Nano Letters 16, 7() 4361-4367
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Applied Physics Letters 109, 2() 022102-1-4
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Nonlinear Generation of Vector Beams from AlGaAs Nanoantennas
Nano Letters 16, 11() 7191-7197
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Molecule-Induced Conformational Change in Boron Nitride Nanosheets with Enhanced Surface Adsorption
Advanced Functional Materials 26, 45() 8202-8210
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Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
Nature Communications 7()
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Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays
Scientific Reports 6()
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Atomically thin optical lenses and gratings
Light: Science & Applications 5()
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High-Brightness Polarized Green InGaN/GaN Light-Emitting Diode Structure with Al-Coated p-GaN Grating
ACS Photonics 3, 10() 1912-1918
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Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors
ACS Nano 10, 2() 2046-2053
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Nano Letters 16, 8() 4925-4931
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Design and fabrication of silicon nanowires towards efficient solar cells
Nano Today 11, 6() 704-737
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Controlling the exciton emission of gold coated GaAs-AlGaAs core-shell nanowires with an organic spacer layer
Nanotechnology 27, 48()
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Robust Sub-Monolayers of Co3O4 Nano-Islands: A Highly Transparent Morphology for Efficient Water Oxidation Catalysis
Advanced Energy Materials 6, 15()
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Optics Express 24, 15() 17345-17358
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Enhanced luminescence from GaN nanopillar arrays fabricated using a top-down process
Nanotechnology 27, 6() 1-6
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Structural Engineering of Nano-Grain Boundaries for Low-Voltage UV-Photodetectors with Gigantic Photo- to Dark-Current Ratios
Advanced Optical Materials 4, 11() 1787-1795
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Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer
Applied Physics Letters 109, 8()
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IEEE Journal of Photovoltaics 6, 3() 746-753
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Advanced Functional Materials 26, 40() 7359-7366
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Nano Letters 16, 8() 5197-5203
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Thermal Delocalization of Excitons in GaAs/AlGaAs Quantum Well Tube Nanowires
Nano Letters 16, 2() 1392-1397
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Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks
Nano Letters 16, 7() 4189-4193
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Semiconductor Science and Technology 31, 9()
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Nano Research 9, 3() 766-773
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Nano Letters 16, 10() 6213-6221
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Nano Letters 16, 5() 3085-3093
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Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers
Nano Letters 16, 8() 5080-5086
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Physical Review E 93, 2() 1-7
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Antimony Induced {112}A Faceted Triangular GaAs1-xSbx/InP Core/Shell Nanowires and Their Enhanced Optical Quality
Advanced Functional Materials 25, 33() 5300-5308
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Nano Letters 15, 3() 1876-1882
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Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping
Nano Letters 15, 5() 3017-3023
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Single nanowire photoconductive terahertz detectors
Nano Letters 15, 1() 206-210
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Nanoscale 7, 11() 4995-5003
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Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering
Advanced Materials 27, 40() 6096-6103
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ACS Nano 9, 4() 4277-4287
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Mode Profiling of Semiconductor Nanowire Lasers
Nano Letters 15, 8() 5342-5348
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Journal of Materials Chemistry C: materials for optical and electronic devices 3, 8() 1745-1750
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Journal of Applied Physics 117, 19() 1-4
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IEEE Journal of Photovoltaics 5, 3() 854-864
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Nanoscale 7, 39() 16266-16272
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Nanotechnology 26, 20() 1-10
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Nano Letters 15, 12() 7847-7852
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Nano Letters 15, 12() 7847-7852
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Zn3As2 Nanowires and Nanoplatelets: Highly Efficient Infrared Emission and Photodetection by an Earth Abundant Material
Nano Letters 15, 1() 378-385
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Applied Physics Letters 106, 21()
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Nano Letters 15, 8() 5279-5283
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Nanoscale 7, 48() 20531-20538
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Nano Letters 15, 2() 998-1005
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Nanotechnology 26, 6() 1-13
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Chemistry of Materials 27, 14() 4934-4942

III-V semiconductor nanowires: Plasmonics and optoelectronics
Australian Physics 52, 3() 84-90
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Materials Research Express 2, 4() 1-13
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Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells
Applied Physics Letters 106, 5() 1-5
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Thin Solid Films 592() 162-166
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IEEE Journal of Photovoltaics 5, 3() 799-804
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Ultraporous Electron-Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible-Blind UV Photodetectors
Advanced Materials 27, 29() 4336-4343
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Scientific Reports 5()
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Nano Letters 15, 1() 307-312
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Interfacial and bulk polaron masses in Zn1-xMgxO/ZnO heterostructures examined by terahertz time-domain cyclotron spectroscopy
Applied Physics Letters 106, 20() 1-4
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Nanotechnology 26, 44()
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Nano Letters 14, 10() 5989-5994
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Journal of Physics D: Applied Physics 47, 34() 1-6
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Progress in Electromagnetics Research Letters 48() 7-13
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Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors
Nano Letters 14, 1() 94-100
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Atomic-scale observation of parallel development of super elasticity and reversible plasticity in GaAs nanowires
Applied Physics Letters 104, 2() 1-4
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Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition
Applied Physics Letters 104, 2() 022108
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Optics Express 22, 13() 15949-15956
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Optics Express 22, 7() 8156-8164
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Nano Letters 14, 8() 4250-4256
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Journal of Physical Chemistry C 118, 31() 17351-17361
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Physica Status Solidi: Rapid Research Letters 8, 1() 69-73
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Nano Letters 14, 12() 7153-7160
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Nano Letters 14, 10() 5865-5872
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Nano Letters 14, 9() 5206-5211
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Nanowires grown on InP (100): Growth Directions, Facets, Crystal Structures, and Relative Yield Control
ACS Nano 8, 7() 6945-6954
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Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate
Applied Physics Letters 103, 22()
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Journal of Crystal Growth 383() 100-105
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Nano Letters 13, 4() 1405-1409
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Nano Letters 13, 11() 5367-5372
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Nature Photonics 7, 12() 963-968
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Advanced Materials 25, 9() 1260-1264
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Photon upconversion in hetero-nanostructured photoanodes for enhanced near-infrared light harvesting
Advanced Materials 25, 11() 1603-1607
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Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Journal of Physical Chemistry C 117, 37() 19234-19238
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Nano Letters 13, 8() 3742-3748
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Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Journal of Physical Chemistry C 117, 37() 19234-19238
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Applied Physics Letters 103, 22()
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Optics Express 21, 9() A324-A335
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Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
Physica Status Solidi: Rapid Research Letters 7, 10() 911-914
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Resolving stable axial trapping points of nanowires in an optical tweezers using photoluminescence mapping
Nano Letters 13, 3() 1185-1191
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Journal of Lightwave Technology 31, 15() 2459-2466
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Nano Letters 13, 3() 1185-1191
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Applied Physics Letters 102, 20() 1-5
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Origin and transport properties of two-dimensional electron gas at ZnMgO/ZnO interface grown by MOVPE
Physica Status Solidi C 10, 10() 1268-1271
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Nano Letters 13, 9() 4280-4287
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Small 9, 23() 3964-3969
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Physical Review B: Condensed Matter and Materials 88, 20() 1-5
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Journal of Lightwave Technology 31, 15() 2459-2466
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Electro-optical switching by liquid-crystal controlled metasurfaces
Biomedical Optics Express 21, 7() 8879-8885
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Journal of Physics D: Applied Physics 46, 9() 1-8
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Ultramicroscopy 124() 96-101
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Ultramicroscopy 124() 96-101
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Ultramicroscopy 132() 186-192
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Ultramicroscopy 132() 186-192
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Nature Communications 4() 10
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Journal of Nanoscience and Nanotechnology 13, 2() 1251-1255
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Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes
Nano Letters 13, 3() 1016-1022
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Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy
Scripta Materialia 69, 8() 638-641
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Nano Letters 13, 9() 4369-4373
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Nano Letters 13, 7() 3169-3172
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Acta Materialia 61, 19() 7166-7172
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Defect formation and thermal stability of H in high dose H implanted ZnO
Journal of Applied Physics 114, 8()
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ACS Nano 7, 9() 8105-8114
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Hydrogen adsorption capacity of adatoms on double carbon vacancies of graphene: A trend study from first principles
Physical Review B 87, 1() 0147102-1 to 04102-7
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Nano Letters 13, 2() 643-650
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High vertical yield InP nanowire growth on Si(111) using a thin buffer layer
Nanotechnology 24, 46() 9
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Journal of Modern Optics 60, 21() 1922-1926
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Optics Express 21, 14() 16273-16281
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Polarity-driven nonuniform composition in InGaAs nanowires
Nano Letters 13, 11() 5085-5089
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Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell Nanowires through shell growth optimization
Nano Letters 13, 11() 5135-5140
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A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination
Applied Physics Letters 102, 21() 1-4
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The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells
Progress in Photovoltaics: Research and Applications 21, 4() 736-746
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Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
Nanotechnology 24, 21() 7
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Electron-pinned defect-dipoles for high-performance colossal permittivity materials
Nature Materials 12, 9() 821-826
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Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique
Applied Physics Letters 102, 3() 1-4
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Charnia-like broadband plasmonic nano-antenna
Journal of Modern Optics 60, 10() 790-796
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Revista Telecomunicacoes 15, 1() 18-22
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Phase-stepping interferometry of GaAs nanowires: Determining nano-wire radius
Applied Physics Letters 103, 16() 161107
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Modal domains and selectivity in large square lasers
Journal of Microwaves, Optoelectronics and Electromagnetic Applications 12, 2() 256-268
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Nano Letters 13, 11() 5085-5089
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Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers
Optics Express 21, 7() 8276-8285
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Analysis of interference between two optical beams in a quasi-zero electric permittivity photonic crystal superlattice
Applied Optics 52, 4() 854-861
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Defect-Free < 110 > Zinc-Blende Structured InAs Nanowires Catalyzed by Palladium
Nano Letters 12, 11() 5744-5749
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Acceptor-like deep level defects in ion-implanted ZnO
Applied Physics Letters 100, 21()
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Physica B 407, 10() 1481-1484
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Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping
ACS Nano 6, 7() 6005-6013
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Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
Nanoscale Research Letters 7, 1() 1-6
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Spin-polarized Wide Electron Slabs in Functionally Graded Polar Oxide Heterostructures
Scientific Reports 2()
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Crystal Growth & Design 12, 4() 2018-2022
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Crystal Growth & Design 12, 4() 2018-2022
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Raman probing of competitive laser heating and local recrystallization effect in ZnO nanocrystals
Biomedical Optics Express 20, 21() 23281-23289
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Small 8, 11() 1725-1731
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Strong Carrier Lifetime Enhancement in GaAs Nanowires coated with Semiconducting Polymer
Nano Letters 12, 12() 6293-6301
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Anderson-like localization in ultrathin nanocomposite alloy films on polymeric substrates
Scripta Materialia 67, 10() 866-869
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Removal of Surface States and Recovery of Band-Edge Emission in InAs Nanowires through Surface Passivation
Nano Letters 12, 7() 3378-3384
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Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD
Journal of Semiconductors (previously Chinese Journal of Semiconductors) 33, 7() 1-4
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Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
Nanoscale Research Letters 7, 1() 1-6
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Broadband scattering by tapered nanoantennas
Physica Status Solidi: Rapid Research Letters 6, 12() 466-468
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A novel photoanode with three-dimensionally, hierarchically ordered nanobushes for highly efficient photoelectrochemical cells
Advanced Materials 24, 30() 4157-4162
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Single crystal kinked ZnO [001] and [110] nanowires: Synthesis, characterization, and growth/kinking mechanism
Crystal Growth & Design 12, 6() 3153-3157
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Origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
Physical Review B: Condensed Matter and Materials 86, 16() 1-13
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Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon
MRS Communications 2, 3() 101-105
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Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
Nanoscale Research Letters 7, 1() 486-486
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Quantum-Dot-Sensitized TiO2 Inverse Opals for Photoelectrochemical Hydrogen Generation
Small 8, 1() 37-42
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Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1?xAs core-shell nanowires
Applied Physics Letters 101, 2() 02311-1 to 02311-4
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Journal of Applied Physics 111, 9() 094910/1-8
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IEEE Photonics Journal 4, 2() 582-585
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Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy
Nano Letters 12, 10() 5325-5330
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Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates
Nanotechnology 23, 41() 1-11
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Journal of Physics D: Applied Physics 45, 44() 1-10
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Nano Energy 1, 2() 322-327
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The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors
Journal of Applied Physics 111, 12()
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Direct-write non-linear photolithography for semiconductor nanowire characterization
Nanotechnology 23, 33() 1-5
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Homogeneous Photosensitization of Complex TiO2 Nanostructures for Efficient Solar Energy Conversion
Scientific Reports 2, 451() 1-6
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Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process
Nanotechnology 23, 11() 115603-115603
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Spin-resolved purcell effect in a quantum dot microcavity system
Nano Letters 12, 7() 3455-3459
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Transient Rayleigh scattering: A new probe of picosecond carrier dynamics in a single semiconductor nanowire
Nano Letters 12, 10() 5389-5395
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Polarization Tunable, Multicolor Emission from Core-Shell Photonic III-V Semiconductor Nanowires
Nano Letters 12, 12() 6428-6431
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Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers
Journal of Applied Physics 112, 11() 1-11
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Liquid crystal based nonlinear fishnet metamaterials
Applied Physics Letters 100, 12() 121113-1-4
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Plasmonic quantum dot solar cells for enhanced infrared response
Applied Physics Letters 100, 10() 1 - 4
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Atomic layer deposition for nanofabrication and interface engineering
Nanoscale 4, 5() 1522-1528
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A plasmonic staircase nano-antenna device with strong electric field enhancement for surface enhanced Raman scattering (SERS) applications
Journal of Physics D: Applied Physics 45, 30() 1-5
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Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
Physical Review B 85, 17() 1-8
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Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
Physical Review B: Condensed Matter and Materials 85, 17() 1-8
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Taper-free and Vertically Oriented Ge Nanowires on Ge/Si Substrates Grown by a Two-Temperature Process
Crystal Growth & Design 12, 1() 135-141
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High index, reactive facet-controlled synthesis of one-dimensional single crystalline rare earth hydroxide nanobelts
CrystEngComm 13, 17() 5367-5373
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Nano Letters 11, 9() 3899-3905
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Photomodulated Rayleigh Scattering of Single Semiconductor Nanowires: Probing Electronic Band Structure
Nano Letters 11, 10() 4329-4336
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Combining different in-plane photonic wire lasers and coupling the resulting field into a single-mode waveguide
Progress in Electromagnetics Research C 21() 191-203
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Characterization of Semiconductor Nanowires Using Optical Tweezers
Nano Letters 11, 6() 2375-2381
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Characterization of Semiconductor Nanowires Using Optical Tweezers
Nano Letters 11, 6() 2375-2381
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Origin of stress in radio frequency magnetron sputtered zinc oxide thin films
Journal of Applied Physics 109, 6() 064905 6
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Nano Letters 11, 10() 4149-4153
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Nano Letters 11, 10() 4149-4153
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Self-healing of fractured GaAs nanowires
Nano Letters 11, 4() 1546-1549
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Advanced Materials Research 23, 11() 1356-1360
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Investigation of the low-temperature synthesis and the properties of BNT-BT ceramics
Gongneng Cailiao /Journal of Functional Materials 42, 11() 2050-2052+2056
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Direct Observation of Local Potassium Variation and Its Correlation to Electronic Inhomogeneity in (Ba1-xKx)Fe2As2 Pnictide
Physical Review Letters 106, 24() 047002-1 to 247002-4
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Synthesis of dense, single-crystalline CrO2 nanowire arrays using AAO template-assisted chemical vapor deposition
Nanotechnology 22, 12() 125603-125603
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Single-step RIE fabrication process of low loss InP waveguide using CH4/H2 chemistry
Journal of the Electrochemical Society 158, 3() H281-H284
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Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors
IEEE Journal of Quantum Electronics 47, 5() 577-590
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III-V semiconductor nanowires for optoelectronic device applications
Progress in Quantum Electronics 35, 2-3() 23-75
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Wavelength selective filter based on polarization control in a photonic bandgap structure with a defect
Optics Express 19, 25() 25643 - 25650
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Quantification of graphene based core/shell quantum dots from first principles
Applied Physics Letters 99, 18() 1-3
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Magic numbers of nanoholes in graphene: Tunable magnetism and semiconductivity
Physical Review B 84, 12() 125410-1 to 125410-7
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Three-dimensional electronic spectroscopy of excitons in asymmetric double quantum wells
Journal of Chemical Physics 135, 4() 1-9
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Physica Status Solidi A 208, 3() 620-623
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Journal of Physics D: Applied Physics 44, 47() 1-7
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Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires
Applied Physics Letters 99, 26() 1-4
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Physical Review B 84, 24() 1-5
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International Journal of High Speed Electronics and Systems 20, 1() 131-141
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Semiconductor Science and Technology 26, 1() 1-10
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Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1() 17-21
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IEEE Journal on Selected Topics in Quantum Electronics 17, 1() 17-21
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Optimal design of composite nanowires for extended reach of surface plasmon-polaritons
Optics Express 19, 17() 16058 -16074
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III-V semiconductor nanowires for optoelectronic device applications
Progress in Quantum Electronics 35, 2-3() 23-75
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Preparation, microstructure, piezoelectric and ferroelectric properties of piezoelectric ceramics with low-lead component
Gongneng Cailiao /Journal of Functional Materials 42, 10() 1869-1872
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Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells
Applied Physics Letters 98, 18() 183509/1-3
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Current Applied Physics 11, 3() S171-S174
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Electrochemistry Communications 13, 11() 1163-1165
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IEEE Journal on Selected Topics in Quantum Electronics 17, 4() 766-778
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Water droplet motion control on superhydrophobic surfaces: Exploiting the Wenzel-to-Cassie transition
Langmuir 27, 6() 2595-2600
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TiO2 inverse-opal electrode fabricated by atomic layer deposition for dye-sensitized solar cell applications
Energy and Environmental Science 4, 1() 209-215
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Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18() 2690-2697
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Journal of Lightwave Technology 29, 18() 2690-2697
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Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures via Sb exposure
Applied Physics Letters 99, 19() 1-3
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Gradient inverse opal photonic crystals via spatially controlled template replication of self-assembled opals
Nanoscale 3, 12() 4951-4954
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Crystal Growth and Design 11, 7() 3109-3114
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Crystal Growth & Design 11, 7() 3109-3114
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Nano Letters 10, 3() 880-886
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Tunable, high beam quality and narrow linewidth semiconductor disk laser
Optical Engineering 49, 10() 5
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Semiconductor Science and Technology 25, 2() 1-13
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Applied Physics Letters 97, 13() 3
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Probing valence band structure in wurtzite InP nanowires using excitation spectroscopy
Applied Physics Letters 97, 2()
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Journal of Physics D: Applied Physics 43, 44() 1-6
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Journal of Physics D: Applied Physics 43, 44() 1-6
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Physica Status Solidi: Rapid Research Letters 4, 10() 253-255
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Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires
Nano Letters 10, 3() 880-886
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The temperature dependence of InGaAs single-wavelength quantum well and multi-wavelength quantum dot square resonator microlasers
Journal of Physics D: Applied Physics 43, 13() 135102/ 1-6
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Physical Review B: Condensed Matter and Materials 81, 11() 6
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Nano Letters 10, 3() 908-915
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Performance assessment of hybrid surface emitting lasers with lateral one-dimensional photonic-crystal mirrors
Journal of the Optical Society of America B 27, 4() 806-817
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Journal of Nanoscience and Nanotechnology 10, 3() 1525-1536
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Applied Physics Letters 96, 5() 051906
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Single-crystalline hexagonal ZnO microtube optical resonators
Journal of Materials Chemistry 20, 26() 5510-5515
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Semiconductor Science and Technology 25, 5() 7
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Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy
Applied Physics Letters 97, 4() 3
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Journal of Physics D: Applied Physics 43, 33() 8
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Optics Letters 35, 24() 4190-4192
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The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Nanoscale 2, 7() 1128-1133
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Electron-hole recombination properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage
Applied Physics Letters 97, 12() 3
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Using graded barriers to control the optical properties of ZnO/ Zn 0.7 Mg0.3 O quantum wells with an intrinsic internal electric field
Applied Physics Letters 96, 19() 3
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Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers
Nanotechnology 21, 29() 295602-295602
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Nanotechnology 21, 3() 1-6
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Kinetics of Stop-Flow Atomic Layer Deposition for High Aspect Ratio Template Filling through Photonic Band Gap Measurements
Journal of Physical Chemistry C 114, 35() 14843-14848
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Nanotechnology 21, 14() 145602-145602
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Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer
Applied Physics Letters 96, 21() 3
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Emission wavelength extension of mid-infrared InAsSb/InP nanostructures using InGaAsSb sandwich layers
Journal of Physics D: Applied Physics 43, 30() 5
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Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition
Applied Physics Letters 97, 22() 3
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A new optical front-end compensation technique for suppression of spurious signal in photoreflectance spectroscopy using an antiphase signal
Review of Scientific Instruments 81, 4() 43102-43102
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Increasing the coupling efficiency of a microdisk laser to waveguides by using well designed spiral structures
Journal of Applied Physics 107, 4() 043105-1 - 043105-8
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Nanotechnology 21, 3() 1-6
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Optics Express 17, 20() 17570-1
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Nano Letters 9, 9() 3349-3353
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IEEE Photonics Technology Letters 21, 6() 359-361
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Applied Physics Letters 94, 19() 3
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Nanotechnology 20, 18() 6
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Nuclear Instruments and Methods in Physics Research: Section B 266() 1367-1372
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Microsystem Technologies 14, 9-11() 1701-1708
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Nanotechnology 19, 125602() 1-6
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Proceedings of the IEEE 96, 12() 1895-1897
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Applied Physics Letters 93, 201908() 1-3
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Applied Physics Letters 92, 243105() 1-3
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Applied Physics Letters 93, 1() 1-3
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Chemical Physics Letters 463, 1-3() 130-133
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Advanced Functional Materials 18() 3794-3800
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Applied Physics Letters 92, 021104() 1-3
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Applied Physics Letters 93, 201908() 1-3
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Applied Physics Letters 93, 101911() 1-3
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Applied Physics Letters 93, 101911() 1-3
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Applied Physics Letters 90() 221914/ 1-3
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Nanotechnology 18() 315403 1-5
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Production issues for high aspect ratio Lobster-eye optics using LIGA
Microsystem Technologies 13, 5-6() 511-515

Fabrication of support structures to prevent SU-8 stiction in high aspect ratio structures
Microsystem Technologies 13, 5-6() 487-493
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Nano Letters 7, 4() 921-926
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AIP Conference Proceedings 893() 869-870
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Nano Letters 7, 11() 3383-3387
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Nuclear Instruments and Methods in Physics Research: Section B 256() 281-287
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Journal of Applied Physics 102() 071101 1-12
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Applied Physics Letters 90() 243114 1-3
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Nanotechnology 18() 175305 1-4
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Applied Physics Letters 90() 093106 1-3
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Optics Express 15, 11() 1-11
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Applied Physics Letters 91() 073515 1-3
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IEEE Journal of Quantum Electronics 43, 4() 279-286
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Nano Letters 7, 3() 588-595
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Applied Physics Letters 91() 173508 1-3
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Nano Letters 7, 4() 921-926
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Journal of the Korean Physical Society 51, 1() 120-124
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Nano Letters 7, 7() 2162-2165
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Infrared Physics and Technology 50() 274-278
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Applied Physics Letters 91() 263104 1-3
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Nanoscale Research Letters 2() 550-553
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Applied Physics Letters 90() 171104 1-3
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Applied Physics Letters 91, 13() 133115 1-3
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Applied Physics Letters 91, 13() 133115 1-3
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Small 3, 11() 1873-1877
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Nano Letters 7, 7() 2162-2165
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IEEE Journal on Selected Topics in Quantum Electronics 12, 6() 1242-1254
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Applied Physics Letters 89, 17() 173126-1-3

AFM-measured surface roughness of SU-8 structures produced by deep x-ray lithography
Journal of Micromechanics and Microengineering 16, 10() 1975-1983
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Journal of Applied Physics 99, 4() 044908-1-5
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Journal of Environmental Chemical Engineering 70, 6() 881-884
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Journal of Applied Physics 99, 11() 113503-1-8
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Chemical States of Nitrogen in ZnO Studied by near-edge X-ray Absorption Fine Structure and Core-level Photoemission Spectroscopies
Surface Science 600() L81-L85
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Journal of Applied Physics 101, 1() 013112-1-9
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Nanotechnology 17() 5373-5377
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Applied Physics Letters 88, 22() 223101-1-3
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Nanotechnology 17() 1867-1870
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Applied Physics Letters 88, 19() 193112-1-3
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Observation of Enhanced Defect Emission and Excitonic Quenching from spherically Indented ZnO
Applied Physics Letters 89, 8() 082102-1-3
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Semiconductor Science and Technology 21() L25-L28
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Applied Physics Letters 89, 18() 182109-1-3
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Applied Physics Letters 89, 11() 113510-1-3
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Journal of Applied Physics 99, 11() 114517-1-8
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Semiconductor Science and Technology 21() 1441-1446
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Journal of the Electrochemical Society 153, 9() G879-G882
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Applied Physics Letters 89, 23() 231917-1-3
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Applied Physics Letters 89, 23() 231917-1-3
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Applied Physics Letters 89, 18() 181917-1-3
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Identification by Photoluminescence and Positron Annihilation of Vacancy and Interstitial Instrinsic Defects in Ion-implanted Silicon
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Chinese Physics Letters 23, 12() 3341-3344
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Nano Letters 6, 4() 599-604
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Scanning Ion Deep Level Transient Spectroscopy: II. Ion Irradiated Au-Si Schottky Junctions
Journal of Physics D: Applied Physics 39() 1352-1362
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Formation of Precipitates in Heavily Boron Doped 4H-SiC
Applied Surface Science 252() 5316-5320
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Applied Physics Letters 89, 23() 232201-1-3
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Applied Physics Letters 88() 161121-1-3
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IEEE Photonics Technology Letters 18, 15() 1648-1650

Specification of mechanical support structures to prevent SU-8 stiction in high aspect ratio structures
Journal of Micromechanics and Microengineering 15, 5() 978-983

Optimisation of SU-8 processing parameters for deep X-ray lithography
Microsystem Technologies 11, 4-5() 303-310
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Overcoming SU-8 stiction in high aspect ratio structures
Microsystem Technologies 11, 2-3() 221-224
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Polarization-Sensitive Terahertz Detection by Multicontact Photoconductive Receivers
Applied Physics Letters 86, 25() 254102-1-3
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Applied Physics Letters 86, 20() 203105-1-3
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Applied Physics Letters 87, 23() 231912-1-3
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IEEE Electron Device Letters 26, 9() 628-630
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Electrochemical and Solid-State Letters 8, 2() G57-G59
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Applied Physics Letters 86, 11() 113102-1-3
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IEEE Transactions on Nanotechnology 3, 3() 348-352
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IEEE Journal of Quantum Electronics 40, 10() 1410-1416
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Nuclear Instruments and Methods in Physics Research: Section B 218() 381-385
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IEEE Circuits and Devices 20, 1() 38-43
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IEEE Photonics Technology Letters 16, 10() 2326-2328
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Applied Physics Letters 84, 14() 2536-2538
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IEEE Photonics Technology Letters 16, 12() 2589-2591
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Nuclear Instruments and Methods in Physics Research: Section B 218() 386-390
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IEEE Photonics Technology Letters 15, 12() 1686-1688
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Electrical Isolation of n- and p-In0.53Ga0.47As Epilayers using Ion Irradiation
Journal of Applied Physics 94, 10() 6616-6620
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Influence of Cap Layer on Implantation Induced Interdiffusion in InP/InGaAs Quantum Wells
Journal of Applied Physics 93, 8() 4468-4470
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Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
Applied Physics Letters 82, 22() 3913-3915
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Ultrafast carrier trapping and recombination in highly resistive ion implanted InP
Journal of Applied Physics 94, 2() 1074-1078
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Electrical Characterization of Impurity-free Disordered p-type GaAs
Electrochemical and Solid-State Letters 6, 3() G37-G40
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Implant Isolation of Zn-doped GaAs Epilayers: Effects of Ion Species, Doping Concentration, and Implantation Temperature
Journal of Applied Physics 93, 11() 9123-9129
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Electron emission properties of a defect at ~(Ec?0.23eV) in impurity-free disorded n-GaAs
Physica B 340-342() 315-319
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A Comparison of Low-energy As Ion Implantation and Impurity-free Disordering Induced Defects in N-type GaAs Epitaxial Layers
Japanese Journal of Applied Physics 42, 3() 1158-1163
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Electrical Characterization of Impurity-free Disordering-induced Defects in n-GaAs using Native Oxide Layers
Applied Physics A: Materials Science and Processing 76() 961-964
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Suppression of Interdiffusion in InGaAs/GaAs Quantum Dots using Dielectric Layer of Titanium Dioxide
Applied Physics Letters 82, 16() 2613-2615
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Determination of Carrier-transfer Length from Side-wall Quantum Well to Quantum Wire by Micro-photoluminescence Scanning
Journal of Electronic Materials 32, 8() 913-916
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Implantation-induced Electrical Isolation of GaAsN Epilayers Grown by Metalorganic Chemical Vapor Deposition
Applied Physics Letters 83, 16() 3386-3388
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Influence of Rapid Thermal Annealing on a 30 Stack InAs/GaAs Quantum Dot Infrared Photodetector
Journal of Applied Physics 94, 8() 5283-5289
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Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition
Japanese Journal of Applied Physics 42() 6827-6832
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Study of defects in ion-implanted silicon using photoluminescence and positron annihilation
Physica B 340-342() 738-742
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Hydrogen Incorporation, Diffusivity and Evolution in Bulk ZnO
Solid-State Electronics 47() 2255-2259
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Growth of Triangular Shaped InGaAs/GaAs Quantum Wire Structures
Journal of Materials Science Letters 22() 467-469
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Implant Isolation of ZnO
Journal of Applied Physics 93, 5() 2972-2976
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Ion-Beam-Produced Structural Defects in ZnO
Physical Review B 67, 9() 094115-1-11
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Dynamic Annealing in Ion Implanted SiC: Flux versus Temperature Dependance
Journal of Applied Physics 94, 11() 7112-7115
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Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon
Physica B 340-342() 748-751
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Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon
European Physical Journal - Applied Physics 23() 5-9
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Vacancy and Interstitial Depth Profiles in Ion-implanted Silicon
Journal of Applied Physics 93, 2() 871-877
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Characterization of Deep Level Traps Responsible for Isolation of Proton Implanted GaAs
Journal of Applied Physics 93, 6() 3234-3238
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Proton-Irradiation-Induced Intermixing in InGaAs Quantum Dots
Applied Physics Letters 82() 2053-2055
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Solubility Limits of Dopants in 4H-SiC
Applied Surface Science 203-204() 427-432
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Chemical Origin of the Yellow Luminescence in GaN
Journal of Applied Physics 91, 9() 5857-5874
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Electrical Isolation of ZnO by Ion Bombardment
Applied Physics Letters 81, 18() 3350-3352
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Structural disorder in ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5() 787-789
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Electrical isolation of Al xGa 1-xAs by ion irradiation
Applied Physics Letters 80, 2() 264-266
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On the Nature of Radiative Recombination in GaAsN
Applied Physics Letters 81, 23() 4368-4370
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"Response to "comment on 'Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation'" [Appl. Phys. Lett. 80, 1492 (2002)]"
Applied Physics Letters 80, 8() 1494-1495
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Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon
Nuclear Instruments and Methods in Physics Research: Section B 186() 334-338
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Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation
Physical Review B 65() 245201-1-9
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Electrical Isolation of AlxGa1-xAs by Ion Irradiation
Applied Physics Letters 80() 264-266
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Passive Mode Locking of a Self-frequency-doubling Yb:Yal3 (BO3)4 Laser
Optics Letters 27, 6() 436-438
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Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature
Nuclear Instruments and Methods in Physics Research: Section B 190() 782-786
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Ion-beam-produced Damage and its Stability in AIN Films
Journal of Applied Physics 92, 7() 3554-3558
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Structural Disorder in Ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5() 787-789
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Blistering of H-implanted GaN
Journal of Applied Physics 91, 6() 3928-3930
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X-ray Spectrometry Investigation of Electrical Isolation in GaN
Journal of Applied Physics 91, 6() 3940-3942
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Mechanical Deformation of Single-crystal ZnO
Applied Physics Letters 80, 6() 956-958
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Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers
Applied Physics Letters 80, 23() 4351-4353
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Indentation-induced Damage in GaN Epilayers
Applied Physics Letters 80, 3() 383-385
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Thermal Stability of Ion-implanted Hydrogen in ZnO
Applied Physics Letters 81, 21() 3996-3998
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Thermally Stimulated Luminescence in Ion-Implanted GaAs
Journal of Luminescence 96() 287-293
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Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide
Journal of Applied Physics 92, 7() 3579-3583
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Study of Intermixing in a GaAs/AlGaAs Quantum-well Structure using Dope Spin-on Silica Layers
Applied Physics Letters 80, 7() 1171-1173
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On the Pulsed Anodic Oxidation of n+-InP
Electrochemical and Solid-State Letters 5, 6() G41-G44
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Atomic Relocation Processes in Impurity-Free Disordered p-GaAs Epilayers Studied by Deep Level Transient Spectroscopy
Applied Physics Letters 81, 19() 3573-3575
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Effect of Irradiation Temperature and Ion Flux on Electrical Isolation of GaN
Journal of Applied Physics 91, 7() 4117-4120
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Optical Studies of Ion-Implantation Centres in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 186() 1-9
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Ultrafast Trapping Times in Ion Implanted InP
Journal of Applied Physics 92, 5() 2420-2423
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Nanoindentation-induced Deformation of Ge
Applied Physics Letters 80, 15() 2651-2653
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Spherical Indentation of Compound Semiconductors
Philosophical Magazine A 82, 10() 1931-1939
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Contact-induced Defect Propagation in ZnO
Applied Physics Letters 80, 24() 4537-4539
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Application of Selective Implantation in Al 0.5Ga 0.5As/In 0.25Ga 0.75As/GaAs Pseudomorphic Single Quantum Wire Structures
Journal of Nanoscience and Nanotechnology 1, 4() 389-392
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Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16() 2561-2563
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Interactions of point defects and impurities with open volume defects in silicon
Materials Research Society Symposium Proceedings 647() O2.4.1-O2.4.11
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Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4() 2351-2356
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Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 235-240
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Impurity-free intermixing of GaAs/AIGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5() 1962-1966
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Mechanical deformation of crystalline silicon during nanoindentation
Materials Research Society Symposium Proceedings 649() Q8.10.1-Q8.10.6
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Mechanical properties of As-grown and ion-beam-modified GaN films
Materials Research Society Symposium Proceedings 649() Q5.5.1-Q5.5.6
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Effect of implant temperature on secondary defects created by MeV Sn implantation is silicon
Journal of Applied Physics 89() 2556-2559
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Electrical isolation of GaN by MeV ion irradiation
Applied Physics Letters 78, 7() 943-945
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Defect Formation Due to the Crystallization of Deep Amorphous Volumes Formed in Silicon by Mega Electron Volt (MeV) Ion Implantation
Journal of Materials Research 16, 11() 3229-3237
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Interaction of Defects and Metals with Nanocavities in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 178() 33-43
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Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing
Infrared Physics and Technology 42() 171-175
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The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN
Nuclear Instruments and Methods in Physics Research: Section B 178() 209-213
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Effect of the density of collision cascades on implantation damage in GaN
Applied Physics Letters 78, 18() 2694-2696
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Effect of ion species on the accumulation of ion-beam damage in GaN
Physical Review B 64() 035202/1-10
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Effects of excitation density on cathodoluminescence from GaN
Applied Physics Letters 79, 14() 2154-2156
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Cathodoluminescence Depth Profiling of Ion-Implanted GaN
Applied Physics Letters 78, 1() 34-36
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Deformation Behavior of Ion-Beam-Modified GaN
Applied Physics Letters 78, 2() 156-158
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Electron and trap dynamics in As-ion-implanted and annealed GaAs
Applied Physics Letters 78, 12() 1667-1669
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Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler
Nuclear Instruments and Methods in Physics Research: Section B 173() 528-532
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Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4() 2351-2356
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Tuning the detection wavelength of quantum-well infrared photodetectors by single-high energy implantation
Applied Physics Letters 78, 1() 10-12
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Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures
Applied Physics Letters 78, 10() 1373-1375
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Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16() 2561-2563
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Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition
Physica B 308-310() 776-779
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Impurity free intermixing of GaAs/AlGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5() 1962-1966
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Effect of Stress on Impurity-free quantum well intermixing
Electrochemical and Solid-State Letters 4() G11-G13
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Possibility of improved frequency response from intermixed quantum-well devices
Superlattices and Microstructures 29, 2() 105-110
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Electrically Steerable Lasers using Wide-Aperture VCSELs
IEEE Photonics Technology Letters 13, 6() 544-546
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Mechanical Deformation of InP and GaAs by Spherical Indentation
Applied Physics Letters 78, 21() 3235-3237
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Mechanical Deformation in Silicon by Micro-indentation
Journal of Materials Research 16, 5() 1500-1507
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Electrical isolation of n-type and p-type InP layers by proton bombardment
Journal of Applied Physics 89, 10() 5343-5347
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Ion-beam-induced reconstruction of amorphous GaN
Physical Review B 63() 113202-1-4
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High-dose ion implantation into GaN
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 214-218
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Selectivity of Nanocavities and Dislocations for Gettering of Cu and Fe in Silicon
Applied Physics Letters 78, 18() 2682-2684
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Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Physical Review B 64() 195211/1-10
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Direct Observation of Voids in the Vacancy Excess Region of Ion Bombarded Silicon
Applied Physics Letters 78, 19() 2867-2869
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Doping of Silicon Carbide by Ion Implantation
Materials Science Forum 353-356() 549-554
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Efficiency of dislocations and cavities for gettering of Cu and Fe in silico
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 154-158
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Channeling Measurements of Ion Implantation Damage in 4H-SiC
Materials Science Forum 353-356() 595-598
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Separation of vacancy and interstitial depth profiles in ion-implanted silicon: experimental observation
Applied Physics Letters 78, 22() 3442-3444
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Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements
Journal of Applied Physics 89, 12() 7932-7939
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Carrier transfer between V-grooved quantum wire and vertical quantum well
Physics Letters A 280() 77-80
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Application of Selective Implantation in AIGaAs/InGaAs/GaAs Pseudomorphic Single Quantum Wire Structures
Nanotechnology 1() 389-392
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Evidence of Blocking Effect on Carrier Trapping Process by Necking Region in a Very Narrow AIGaAs/GaAs V-grooved Quantum Wire Structure
Journal of Applied Physics 90, 10() 5438-5440
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The crystallisation of deep amorphous wells in silicon produced by ion implantation
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 164-168
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Solubility Limit and Precipitate Formation in Al-doped 4H-SiC Epitaxial Material
Applied Physics Letters 79, 13() 2016-2018
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The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
Journal of Crystal Growth 222() 786-790
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Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking
Journal of Physics D: Applied Physics 34, 16() 2455-2464
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Performance comparison of GaAs/AlGaAs quantum well infrared photodetectors grown by MOCVD and MBE
Journal of Environmental Chemical Engineering 21, 5() 441-444
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Ion-beam-induced dissociation and bubble formation in GaN
Applied Physics Letters 77, 22() 3577-3579
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Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures
Japanese Journal of Applied Physics 39, 9 A() 5124-5127
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The use of micro-raman spectroscopy to monitor high-pressure hightemperature annealing of ion-implanted GaN films
Materials Research Society Symposium Proceedings 595() W11461-W11466
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Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector
Journal of Environmental Chemical Engineering 19, 1() 25-28
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Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147, 5() 1950-1956
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The use of micro-raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1()
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Application of high energy implantation in tuning the detection wavelength of quantum well infrared photodetectors
Journal of Environmental Chemical Engineering 1() 88-89
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The micro-photoluminescence of a single V-groove GaAs/AlGaAs quantum wire
Wuli Xuebao/Acta Physica Sinica 49, 9() 1812-1813
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High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering
Journal of Applied Physics 87() 2736-2741
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Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing
Japanese Journal of Applied Physics 39() 1687-1689
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Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/A10.3Ga0.7As Multiple Quantum Wells
Materials Research Society Symposium Proceedings 607() 217-222
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Ion-Beam-Induced Porosity of GaN
Applied Physics Letters 77() 1455-1457
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Damage Buildup in GaN under Ion Bombardment
Physical Review B 62() 7510-7522
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Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment
Journal of Applied Physics 88() 5493-5495
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Ion beam induced dissociation and bubble formation in GaN
Applied Physics Letters 77() 3577-3579
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Investigation of AlGaAs/GaAs V-grooved Quantum Wire Infrared
Japanese Journal of Applied Physics 39() 5124-5127
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Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells
Applied Physics Letters 77() 2867-2869
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Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures
Physics Letters A 271() 213-216
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Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
Journal of Applied Physics 87() 1566-1568
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Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers
Applied Physics Letters 76() 1306-1308
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Photoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Micrsocopy Measurements on MeV Self-Ion Implanted and Annealed n-type Silicon
Journal of Applied Physics 88() 2309-2317
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Imaging Charge Trap Distributions in GaN Using Environmental Scanning Electron Micrsocopy
Applied Physics Letters 77() 1342-1344
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Effect of implant temperature on extended defects created by ion implantation in silicon
Defects and Diffusion Forum Part A: Defect and Diffusion Forum 183, 1() 163-169
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Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon
Journal of Applied Physics 88() 1312-1318
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Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
Journal of Applied Physics 88() 2519-2522
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Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
Physical Review B 61() 8306-8311
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Nanoindentation of Epitaxial GaN Films
Applied Physics Letters 77() 3373-3375
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Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing
Applied Physics Letters 76() 837-839
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Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition
Applied Physics Letters 77() 696-698
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Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers
Journal of Applied Physics 88() 5255-5261
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Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
Electrochemical and Solid-State Letters 3() 196-199
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Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147() 1950-1956
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Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells
Materials Research Society Symposium Proceedings 607() 491-502
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Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells
Surface and Interface Analysis 29() 754-760
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Photoluminescence in delta-doped InGaAs/GaAs single quantum wells
Journal of Applied Physics 87() 3896-3899
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A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells
Journal of Applied Physics 88() 5252-5254
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Transmission Electron Microscopy Observation of Deformation Microstructure under Spherical Indentation in Silicon
Applied Physics Letters 77() 3749-3751
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Transport and quantum electron mobility in the modulation Si d-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy
Applied Physics Letters 77() 999-1001
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Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN
Applied Physics Letters 76() 3899-3901
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Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation
Griffith Asia Quarterly () 355-357
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Interdiffused quantum-well infrared photodetectors for color sensitive arrays
Applied Physics Letters 75, 7() 923-925
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Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions
Griffith Asia Quarterly () 505-508

Selective intermixing of ion irradiated semiconductor heterostructures
Materials Research Society Symposium Proceedings 540() 15-26
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Photoluminescence of InGaAs/GaAs with double lights
Journal of Environmental Chemical Engineering 20, 8() 656-661
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Nonlinear optical properties of ion-implanted GaAs
Griffith Asia Quarterly () 151-153

Changes in interdiffusion associated with thermally oxidized GaAs
Griffith Asia Quarterly () 218-221

Proton irradiation effects on the intersubband transition in GaAs/AlGaAs multiple quantum wells with bulk or superlattice barriers
Applied Physics Letters 75, 4() 525-527

Scanning ion deep level transient spectroscopy
Nuclear Instruments and Methods in Physics Research: Section B 158, 1() 464-469
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Inter-facet noise correlation measurement as a diagnostic tool for semiconductor laser studies
Griffith Asia Quarterly () 236-239
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Observation of state filling effects in the carrier dynamics of self-assembled quantum dots
Griffith Asia Quarterly () 344-347
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High power CW output from low confinement asymmetric structure diode laser
Electronics Letters 35, 2() 148-149
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Ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers
Griffith Asia Quarterly () 105-108
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Optical properties of self-organized InGaAs/GaAs quantum dots in field-effect structures
Materials Research Society Symposium Proceedings 536() 269-274
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Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices
Griffith Asia Quarterly () 352-354
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Intermixing induced resonance shift in GaAs/Al xO y DBR resonators
Griffith Asia Quarterly () 365-368
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Fabrication and characterization of delta-doped In 0.2Ga 0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy
Griffith Asia Quarterly () 140-143
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Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence
Griffith Asia Quarterly () 187-190
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Comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy
Griffith Asia Quarterly () 348-351
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Application of selective implantation induced intermixing on V-grooved AlGaAs/GaAs coupled quantum wire
Griffith Asia Quarterly () 513-515
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TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wells
Griffith Asia Quarterly () 358-360
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Tuning of detection wavelength of GaAs/AlGaAs quantum-well IR photo-detectors by thermal interdiffusion
Griffith Asia Quarterly () 128-130
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Radiative recombination in p-type d-doped layers in GaAs
Physical Review B 60, 4() R2193-R2196
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Energy Sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As Quantum Wire
Superlattices and Microstructures 26, 5() 307-315
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Photoluminescence of selectively Si d-doped In0.2Ga0.8As heterostructure at 77K
Journal of Environmental Chemical Engineering 20, 7() 573-577
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The Role of Fe on the Crystallisation of a-Si3N4 from Amorphous Si-N Formed by Ion Implantation
Nuclear Instruments and Methods in Physics Research: Section B 148() 534-539
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Intermixing induced resonance shift in GaAs/AlxOy distributed Bragg resonators
Journal of Applied Physics 85() 7964-7966
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Photomodulation spectroscopy of Zn d-doped GaAs
Griffith Asia Quarterly () 519-521
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Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si
Applied Physics Letters 74() 1141-1143
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Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers
Journal of Applied Physics 85() 6786-6789
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Continuous wave operation of low confinement asymmetric structure diode lasers
Electronics Letters 35() 148-149
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Interdiffused quantum well infrared photodetector tuning for colour sensitive arrays
Applied Physics Letters 75() 923-925
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Vertical Integration of Dual Wavelength Index Guided GaAs-Lasers
Electronics Letters 35() 815-817
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Multipulse Operation of a Ti:sapphire Laser Mode locked by an Ion-Implanted Semiconductor Saturable-Absorber Mirror
Journal of the Optical Society of America B 16, 6() 895-904
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Nonlinear Optical Absorption and Temporal Response of Arsenic-and Oxygen-Implantated GaAs
Applied Physics Letters 74, 14() 1993-1995
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Hydrogen Interaction with Implantation Induced Point Defects in p-type Silicon
Journal of Applied Physics 85, 5() 2562-2567
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Wavelength tuning of GaAs/AlGaAs quantum well infrared photodetectors by thermal interdiffusion
Japanese Journal of Applied Physics 38() 5044-5045
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Radiative recombination in p-type delta doped layers in GaAs
Physical Review B 60() R2193-R2196
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Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealing
Applied Physics Letters 75() 3339-3341
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Photoluminescence of Si d-doped InGaAs/GaAs heterostructures with double beam excitation
Griffith Asia Quarterly () 516-518
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Impurity-free interdiffusion in GaAs/Al 0.54Ga 0.46As multiple quantum wells capped with PECVD SiO x: Effect of nitrous oxide flow
Griffith Asia Quarterly () 361-364
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Characterization of low-temperature PECVD silicon dioxide films
Materials Research Society Symposium Proceedings 555() 197-202
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Diffusion and Transient Trapping of Metals in Silicon
Physical Review B 59, 11() 7990-7998
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The Role of Oxygen on the Stability of Gettering of Metals to Cavities in Silicon
Applied Physics Letters 75, 16() 2424-2426
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Ultra-Micro-Indentation of Silicon and Compound Semiconductors with Spherical Indenters
Journal of Materials Research 14, 6() 2338-2343
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Role of Implantation-Induced Defects on the Response Time of Semiconductor Saturable Absorbers
Applied Physics Letters 75, 10() 1437-1439
, , , ,
Proton irradiation effects on the inter sub-band transitions in GaAs/AlGaAs multiple quantum wells with bulk and superlattice barriers
Applied Physics Letters 75() 525-527
,
Annealing of ion implanted gallium nitride
Applied Physics Letters 72, 10() 1190-1192
, , ,
Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures
IEEE Journal on Selected Topics in Quantum Electronics 4, 4() 629-634
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Efficient gettering of low concentrations of copper contamination to hydrogen induced nanocavities in silicon
Applied Physics Letters 73, 18() 2639-2641
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The influence of cavities and point defects on boron diffusion in silicon
Applied Physics Letters 72, 19() 2418-2420
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Microstructural difference between platinum and silver trapped in hydrogen induced cavities in silicon
Applied Physics Letters 72, 21() 2713-2715
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Analysis of semiconductors by ion channelling: Applications and pitfalls
Nuclear Instruments and Methods in Physics Research: Section B 136-138() 453-459
,
The precipitation of Fe at the Si-SiO2 interface
Journal of Applied Physics 83, 1() 580-584
,
Si-implantation activation annealing of GaN up to 1400?C
Journal of Electronic Materials 27, 4() 179-184
,
Urbach tail in InP with nanometer metallic precipitates
Physica Status Solidi (A) Applied Research 168, 2() 475-477
,
Electrically modulated photoluminescence in self-organized InGaAs/GaAs quantum dots
Applied Physics Letters 73, 19() 2811-2813
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Si and C d-doping for device applications
Journal of Crystal Growth 195, 1-Apr() 54-57
,
Electron transfer efficiency of Si d-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum wells
Applied Physics Letters 72, 18() 2322-2324
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An antiresonant Fabry-Perot saturable absorber for passive mode-locking fabricated by metal-organic vapor phase epitaxy and ion implantation design, characterization, and mode-locking
IEEE Journal of Quantum Electronics 34, 11() 2150-2161
,
Si and C d-doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlattices
Materials Science and Engineering B 51, 1-Mar() 103-105

Native defect engineering of interdiffusion using thermally grown oxides of GaAs
Applied Physics Letters 73, 6() 803-805
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Improved carrier collection in intermixed InGaAs/GaAs quantum wells
Applied Physics Letters 73, 23() 3408-3410
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Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ions
Applied Physics Letters 72, 23() 3044-3046
,
Effect of anodization of photoluminescence of GaAs/AlGaAs quantum wires
Journal of Environmental Chemical Engineering 19, 1() 72-75
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Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells
Journal of Applied Physics 83, 3() 1305-1311

Conference paper

( publications)

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Nanowires: A New Horizon for Polarization-resolved Terahertz Time-domain Spectroscopy
"2021 Conference on Lasers and Electro-Optics (CLEO)" ?, ?()
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