Semiconductor optoelectronics and nanotechnology group
Department of Electronic Materials Engineering
Book editor
( publications)
Lee E, Eldada L, Razeghi M, Jagadish C (Eds.)
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011)
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011)
Christen J, Jagadish C, Look D, Yao T, Bertram F (Eds.)
Zinc Oxide and Related Materials (Volume 957)
Materials Research Society, USA (2007) ?
Zinc Oxide and Related Materials (Volume 957)
Materials Research Society, USA (2007) ?
Book chapter
( publications)
Lourdudoss S, Bowers J, Jagadish C
SEMICONDUCTORS AND SEMIMETALS Future Directions in Silicon Photonics Preface
The Impact, Legitimacy and Effectiveness of EU Counter-Terrorism
Taylor and Francis Inc., United Kingdom (2019) XV-XVIII
SEMICONDUCTORS AND SEMIMETALS Future Directions in Silicon Photonics Preface
The Impact, Legitimacy and Effectiveness of EU Counter-Terrorism
Taylor and Francis Inc., United Kingdom (2019) XV-XVIII
Lourdudoss S, Chen R, Jagadish C
SERIES EDITORS PREFACE
Silicon Photonics, Volume 99
Academic Press, Cambridge, United States (2018) IX-XI
SERIES EDITORS PREFACE
Silicon Photonics, Volume 99
Academic Press, Cambridge, United States (2018) IX-XI
Mokkapati S, Jagadish C
Nanowires for Energy Applications PREFACE
Nanowires for Energy Applications
Academic Press - Elsevier, San Diego (2018) XI-XII
Nanowires for Energy Applications PREFACE
Nanowires for Energy Applications
Academic Press - Elsevier, San Diego (2018) XI-XII
Kang J, Gao Q, Tan H, Joyce H, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J, Jagadish C
Growth and characterization of GaAs nanowires grown on Si substrates
Nanoelectronic Device Applications Handbook
CRC Press, Boca Raton (2017) 603-614
Growth and characterization of GaAs nanowires grown on Si substrates
Nanoelectronic Device Applications Handbook
CRC Press, Boca Raton (2017) 603-614
Lunardi L, Mokkapati S, Jagadish C
Optoelectronic Devices
Guide to State-of-the-Art Electron Devices
John Wiley & Sons Inc, UK (2013) 265-274
Optoelectronic Devices
Guide to State-of-the-Art Electron Devices
John Wiley & Sons Inc, UK (2013) 265-274
Davis J, Jagadish C
ZnO/MgZnO quantum wells
GaN and ZnO-based Materials and Devices
Springer-Verlag Berlin Heidelberg, London (2012) 413-434
ZnO/MgZnO quantum wells
GaN and ZnO-based Materials and Devices
Springer-Verlag Berlin Heidelberg, London (2012) 413-434
Davis J, Jagadish C
Semiconductors and their nanostructures
Optical Techniques for Solid-State Materials Characterization
CRC Press LLC, Boca Raton Florida USA (2012) 39-78
Semiconductors and their nanostructures
Optical Techniques for Solid-State Materials Characterization
CRC Press LLC, Boca Raton Florida USA (2012) 39-78
Fu L, Mokkapati S, Barik S, Buda M, Tan H, Jagadish C
Disordering of quantum structures for optoelectronic device integration
Comprehensive Semiconductor Science and Technology
Elsevier, Amsterdam Netherlands (2011) 584-621
Disordering of quantum structures for optoelectronic device integration
Comprehensive Semiconductor Science and Technology
Elsevier, Amsterdam Netherlands (2011) 584-621
Fu L, Vandervelde T, Krishna S
Quantum Dot Infared Photodetectors
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011) 1-24
Quantum Dot Infared Photodetectors
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011) 1-24
Mokkapati S, Tan H, Jagadish C
Quantum Dot Integrated Optoelectronic Devices
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011) 11.1-11.34
Quantum Dot Integrated Optoelectronic Devices
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011) 11.1-11.34
Williams J, Wong-Leung J
Voids and Nanocavities in Silicon
Topics in Applied Physics 116: Materials Science with Ion Beams
Springer, Berlin (2010) 113-146
Voids and Nanocavities in Silicon
Topics in Applied Physics 116: Materials Science with Ion Beams
Springer, Berlin (2010) 113-146
Sears K, Mokkapati S, Tan H, Jagadish C
In(Ga)As/GaAs quantum dots grown by MOCVD for optoelectronic device applications
Self-Assembled Quantum Dots
Springer, New York (2008) 359-403
In(Ga)As/GaAs quantum dots grown by MOCVD for optoelectronic device applications
Self-Assembled Quantum Dots
Springer, New York (2008) 359-403
Coleman V, Bradby J, Jagadish C, Phillips M
A Comparison of the Mechanical properties and the impact of contact induced damage in a- and c- Axis ZnO Single crystals
Zinc Oxide and Related Materials (Volume 957)
Materials Research Society, USA (2007) 213-218
A Comparison of the Mechanical properties and the impact of contact induced damage in a- and c- Axis ZnO Single crystals
Zinc Oxide and Related Materials (Volume 957)
Materials Research Society, USA (2007) 213-218
Journal article
( publications)
Gupta B, Lee Y, Black L, Jagadish C, Tan H, Karuturi S
Unveiling the Role of H2 Plasma for Efficient InP Solar Cells
Solar RRL (2023)
Unveiling the Role of H
Solar RRL (2023)
Tan H, Jagadish C
Polarization Conversion of Light Diffracted from InP Nanowire Photonic Crystal Arrays
Advanced Optical Materials (2023)
Polarization Conversion of Light Diffracted from InP Nanowire Photonic Crystal Arrays
Advanced Optical Materials (2023)
Adhikari S, Kremer F, Lysevych M, Jagadish C, Tan H
Core-shell GaN/AlGaN nanowires grown by selective area epitaxy
Nanoscale Horizons (2023)
Core-shell GaN/AlGaN nanowires grown by selective area epitaxy
Nanoscale Horizons (2023)
Liu S, Liu D, Sheng Y
Ferroelectric domain engineering with femtosecond pulses of different wavelengths
Optics Express 31, 4(2023) 5843-5852
Ferroelectric domain engineering with femtosecond pulses of different wavelengths
Optics Express 31, 4(2023) 5843-5852
Zangeneh Kamali K, Xu L, Gagrani N, Tan H, Jagadish C, Miroshnichenko A, Neshev D, Rahmani M
Electrically programmable solid-state metasurfaces via flash localised heating
SCOPUS Not Found 12, 1(2023)
Electrically programmable solid-state metasurfaces via flash localised heating
SCOPUS Not Found 12, 1(2023)
Adhikari S, Lysevych M, Jagadish C, Tan H
Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters
Crystal Growth & Design 22, 9(2022) 5345-5353
Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters
Crystal Growth & Design 22, 9(2022) 5345-5353
Zuo X, Li Z, Wong W, Yu Y, Li X, He J, Fu L, Tan H, Jagadish C, Yuan X
Design of InAs nanosheet arrays with ultrawide polarization-independent high absorption for infrared photodetection
Applied Physics Letters 120, 7(2022)
Design of InAs nanosheet arrays with ultrawide polarization-independent high absorption for infrared photodetection
Applied Physics Letters 120, 7(2022)
Wang D, Fu L, Wu W, Liu S, Fang S, Kang Y, Wang X, Hu W, Yu H, Zhang H, Liu X, Luo Y, He J, Long S, Sun H
Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires
SCOPUS Not Found 11, 1(2022)
Observation of polarity-switchable photoconductivity in III-nitride/MoS
SCOPUS Not Found 11, 1(2022)
Wang N, Liu S, Krolikowski W, Zhao R, Sheng Y, Xu T, Chen F, Arie A
Effect of spatial variation of the duty cycle in transverse second-harmonic generation
Optics Letters 47, 15(2022) 3656-3659
Effect of spatial variation of the duty cycle in transverse second-harmonic generation
Optics Letters 47, 15(2022) 3656-3659
Wei S, Murugappan K, Li Z, Zhang F, Gopakumar Saraswathyvilasam A, Lysevych M, Tan H, Jagadish C, Tricoli A, Fu L
A Self-Powered Portable Nanowire Array Gas Sensor for Dynamic NO2 Monitoring at Room Temperature
Advanced Materials 2207199(2022)
A Self-Powered Portable Nanowire Array Gas Sensor for Dynamic NO2 Monitoring at Room Temperature
Advanced Materials 2207199(2022)
Wong W, Jagadish C, Tan H
III-V Semiconductor Whispering-Gallery Mode Micro-Cavity Lasers: Advances and Prospects
IEEE Journal of Quantum Electronics 58, 4(2022) 18
III-V Semiconductor Whispering-Gallery Mode Micro-Cavity Lasers: Advances and Prospects
IEEE Journal of Quantum Electronics 58, 4(2022) 18
Yi R, Zhang X, Li C, Zhao B, Wang J, Li Z, Gan X, Li L, Zhang F, Fang L, Wang N, Chen P, Lu W, Fu L, Zhao J, Tan H, Jagadish C
Self-frequency-conversion nanowire lasers
Light: Science & Applications 11, 1(2022) 1-9
Self-frequency-conversion nanowire lasers
Light: Science & Applications 11, 1(2022) 1-9
Zhang D, Li H, Riaz A, Sharma A, Liang W, Wang Y, Chen H, Vora K, Yan D, Su Z, Tricoli A, Zhao C, Beck F, Reuter K, Catchpole K, Karuturi S
Unconventional direct synthesis of Ni3N/Ni with N-vacancies for efficient and stable hydrogen evolution
Energy and Environmental Science 15, 1(2022) 185-195
Unconventional direct synthesis of Ni3N/Ni with N-vacancies for efficient and stable hydrogen evolution
Energy and Environmental Science 15, 1(2022) 185-195
Zhou K, Wang B, Tang S, Gao Y, Liu S, Sheng Y, Jinjin C, Dai S, Shen X
Mid-infrared biomimetic moth-eye-shaped polarization-maintaining and angle-insensitive metalens
Optics Express 30, 7(2022) 12048-12060
Mid-infrared biomimetic moth-eye-shaped polarization-maintaining and angle-insensitive metalens
Optics Express 30, 7(2022) 12048-12060
Zhang X, Zhang F, Fu L, Tan H, Jagadish C
Integrating a Nanowire Laser in an on-Chip Photonic Waveguide
Nano Letters 22, 24(2022) 9920-9927
Integrating a Nanowire Laser in an on-Chip Photonic Waveguide
Nano Letters 22, 24(2022) 9920-9927
Tan H
In situ grown hierarchical NiO nanosheet@nanowire arrays for high-performance electrochromic energy storage applications
Nanoscale Advances (2022)
In situ grown hierarchical NiO nanosheet@nanowire arrays for high-performance electrochromic energy storage applications
Nanoscale Advances (2022)
Wong W, Wang N, Jagadish C, Tan H
Directional Lasing in Coupled InP Microring/Nanowire Systems
Laser and Photonics Reviews (2022)
Directional Lasing in Coupled InP Microring/Nanowire Systems
Laser and Photonics Reviews (2022)
Weissflog M, Cai M, Parry M, Rahmani M, Xu L, Marino G, Lysevych M, Tan H, Jagadish C, Miroshnichenko A, Sukhorukov A, Setzpfandt F, Staude I, Neshev D
Far-Field Polarization Engineering from Nonlinear Nanoresonators
Laser and Photonics Reviews (2022)
Far-Field Polarization Engineering from Nonlinear Nanoresonators
Laser and Photonics Reviews (2022)
Tabi G, Pham H, Zhan H, Walter D, Osorio Mayon Y, Peng J, Duong T, Ismael M, Shen H, Duan L, Mozaffari N, White T, Li L, Nguyen H, MAHMUD M, Weber K, Catchpole K
LiI doping of mixed-cation mixed-halide perovskite solar cells: Defect passivation, controlled crystallization and transient ionic response
Materials Today Physics 27(2022)
LiI doping of mixed-cation mixed-halide perovskite solar cells: Defect passivation, controlled crystallization and transient ionic response
Materials Today Physics 27(2022)
Haggrén T, Tournet J, Jagadish C, Tan H
Strain-Engineered Multilayer Epitaxial Lift-Off for Cost-Efficient III-V Photovoltaics and Optoelectronics
ACS Applied Materials and Interfaces (2022)
Strain-Engineered Multilayer Epitaxial Lift-Off for Cost-Efficient III-V Photovoltaics and Optoelectronics
ACS Applied Materials and Interfaces (2022)
Li Z, Wong W, Yu Y, Fu L, Tan H, Jagadish C, Yuan X
Design of InAs nanosheet arrays for high-performance polarization-sensitive infrared photodetection
Journal of Physics D: Applied Physics 55, 1(2022)
Design of InAs nanosheet arrays for high-performance polarization-sensitive infrared photodetection
Journal of Physics D: Applied Physics 55, 1(2022)
Rashidi Shahgoli M, Haggrén T, Jagadish C, Tan H
Characteristics and Thermal Control of Random and Fabry-Pérot Lasing in Nanowire Arrays
ACS Photonics (2022)
Characteristics and Thermal Control of Random and Fabry-Pérot Lasing in Nanowire Arrays
ACS Photonics (2022)
Tan H
Nanoscale 3D Tomography by In-Flight Fluorescence Spectroscopy of Atoms Sputtered by a Focused Ion Beam
Nano Letters 22, 20(2022) 8287-8293
Nanoscale 3D Tomography by In-Flight Fluorescence Spectroscopy of Atoms Sputtered by a Focused Ion Beam
Nano Letters 22, 20(2022) 8287-8293
Tan H
TiO2 nanotubular arrays decorated with ultrafine Ag nanoseeds enabling a stable and dendrite-free lithium metal anode
Nanoscale Advances (2022)
TiO
Nanoscale Advances (2022)
Tu C, Kaveh M, Fränzl M, Gao Q, Tan H, Jagadish C, Schmitzer H, Wagner H
Unique reflection from birefringent uncoated and gold-coated InP nanowire crystal arrays
Optics Express 30, 3(2022) 3172-3182
Unique reflection from birefringent uncoated and gold-coated InP nanowire crystal arrays
Optics Express 30, 3(2022) 3172-3182
Adhikari S, Kremer F, Lee Cheong Lem O, Vora K, Brink F, Tan H, Lysevych M, Jagadish C
Nonpolar Al x Ga1?x N/Al y Ga1?y N multiple quantum wells on GaN nanowire for UV emission
Nano Research 15, 8(2022) 7670 - 7680
Nonpolar Al
Nano Research 15, 8(2022) 7670 - 7680
Stern H, Gu Q, Jarman J, Eizagirre Barker S, Mendelson N, Chugh D, Schott S, Tan H, Sirringhaus H, Aharonovich I, Atatüre M
Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride
Nature Communications 13, 1(2022) 1-9
Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride
Nature Communications 13, 1(2022) 1-9
Jiang Y, Tan H, Shen R, Jagadish C, Tian J, Li T, Li S, Qing C
Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y2O3
Nanoscale 14, 35(2022) 12830-12840
Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y2O3
Nanoscale 14, 35(2022) 12830-12840
Soo J, Gupta B, Riaz A, Jagadish C, Tan H, Karuturi S
Facile Substrate-Agnostic Preparation of High-Performance Regenerative Water Splitting (Photo)electrodes
Chemistry of Materials 34, 15(2022) 6792-6801
Facile Substrate-Agnostic Preparation of High-Performance Regenerative Water Splitting (Photo)electrodes
Chemistry of Materials 34, 15(2022) 6792-6801
Bera K, Chugh D, Tan H, Roy A, Jagadish C
Non-thermal and thermal effects on mechanical strain in substrate-transferred wafer-scale hBN films
Journal of Applied Physics 132, 10(2022)
Non-thermal and thermal effects on mechanical strain in substrate-transferred wafer-scale hBN films
Journal of Applied Physics 132, 10(2022)
Chen X, Mazur L, Liu D, Liu S, Liu X, Xu Z, Wei X, Wang J, Sheng Y, Wei Z, Krolikowski W
Quasi-phase matched second harmonic generation in a PMN-38PT crystal
Optics Letters 47, 8(2022) 2056-2059
Quasi-phase matched second harmonic generation in a PMN-38PT crystal
Optics Letters 47, 8(2022) 2056-2059
Gagrani N, Vora K, Adhikari S, Jiang Y, Jagadish C, Tan H
n-SnOx as a Transparent Electrode and Heterojunction for p-InP Nanowire Light Emitting Diodes
Advanced Optical Materials 10, 11(2022)
n-SnOx as a Transparent Electrode and Heterojunction for p-InP Nanowire Light Emitting Diodes
Advanced Optical Materials 10, 11(2022)
Gagrani N, Vora K, Fu L, Jagadish C, Tan H
Flexible InP-ZnO nanowire heterojunction light emitting diodes
Nanoscale Horizons 7, 4(2022)
Flexible InP-ZnO nanowire heterojunction light emitting diodes
Nanoscale Horizons 7, 4(2022)
Gagrani N, Vora K, Jagadish C, Tan H
Thin SnxNiyOz Films as p-Type Transparent Conducting Oxide and Their Application in Light-Emitting Diodes
ACS Applied Materials and Interfaces 14, 32(2022) 37101-37109
Thin SnxNiyOz Films as p-Type Transparent Conducting Oxide and Their Application in Light-Emitting Diodes
ACS Applied Materials and Interfaces 14, 32(2022) 37101-37109
Gopakumar Saraswathyvilasam A, Prasanna P, Yuan X, Azimi Z, Kremer F, Jagadish C, Chakraborty S, Tan H
Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal-Organic Chemical Vapor Deposition
ACS Applied Materials & Interfaces 14, 2(2022) 3395�¢â?¬â??3403
Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal-Organic Chemical Vapor Deposition
ACS Applied Materials & Interfaces 14, 2(2022) 3395�¢â?¬â??3403
Guo R, Li Z, Dalton L, Crandall D, McClure J, Wang H, Chen C
Role of heterogeneous surface wettability on dynamic immiscible displacement, capillary pressure, and relative permeability in a CO2-water-rock system
Advances in Water Resources 165(2022)
Role of heterogeneous surface wettability on dynamic immiscible displacement, capillary pressure, and relative permeability in a CO2-water-rock system
Advances in Water Resources 165(2022)
Gupta B, Hossain M, Riaz A, Sharma A, Zhang D, Tan H, Jagadish C, Catchpole K, Hoex B, Karuturi S
Recent Advances in Materials Design Using Atomic Layer Deposition for Energy Applications
Advanced Functional Materials 32, 3(2022) 1-39
Recent Advances in Materials Design Using Atomic Layer Deposition for Energy Applications
Advanced Functional Materials 32, 3(2022) 1-39
Haggrén T, Raj V, Haggren A, Gagrani N, Jagadish C, Tan H
CuI as a Hole-Selective Contact for GaAs Solar Cells
ACS Applied Materials and Interfaces 14, 47(2022) 52918 - 52926
CuI as a Hole-Selective Contact for GaAs Solar Cells
ACS Applied Materials and Interfaces 14, 47(2022) 52918 - 52926
Azimi Z, Gopakumar Saraswathyvilasam A, Li L, Kremer F, Lockrey M, Wibowo A, Nguyen H, Tan H, Jagadish C, Wong-Leung J
Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics
Advanced Optical Materials 10, 18(2022) 1-9
Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics
Advanced Optical Materials 10, 18(2022) 1-9
Wan Ahmad Kamil W, Tan H, Jagadish C, Dawes J, Zhao B, Ismail W
A hybrid random laser using dye with self-organized GaN nanorods
Semiconductor Science and Technology 37, 2(2022) 8
A hybrid random laser using dye with self-organized GaN nanorods
Semiconductor Science and Technology 37, 2(2022) 8
Pan W, Nath S, Ma S, Lei W, Gu R, Zhang Z, Fu L, Faraone L
Non-invasive and non-destructive characterization of MBE-grown CdZnTe/CdTe superlattice-based dislocation filtering layers
Journal of Applied Physics 131, 20(2022)
Non-invasive and non-destructive characterization of MBE-grown CdZnTe/CdTe superlattice-based dislocation filtering layers
Journal of Applied Physics 131, 20(2022)
Kaushik S, Chugh D, Karmakar S, Jagadish C, Varshney R, Tan H, Sheoran H, Singh R
Deep-Ultraviolet Photodetectors Based on Hexagonal Boron Nitride Nanosheets Enhanced by Localized Surface Plasmon Resonance in Al Nanoparticles
ACS Applied Nano Materials 5, 5(2022) 7481-7491
Deep-Ultraviolet Photodetectors Based on Hexagonal Boron Nitride Nanosheets Enhanced by Localized Surface Plasmon Resonance in Al Nanoparticles
ACS Applied Nano Materials 5, 5(2022) 7481-7491
Potočnik T, Jagadish C, Christopher P, Tan H, Mouthaan R, Joyce H, Albrow-Owen T, Burton O, Wilkinson T, Hofmann S, Alexander-Webber J
Automated Computer Vision-Enabled Manufacturing of Nanowire Devices
ACS Nano 16(2022) 18009 - 18017
Automated Computer Vision-Enabled Manufacturing of Nanowire Devices
ACS Nano 16(2022) 18009 - 18017
Pham H, Weber K, Duong T, Wong-Leung J
Impact of Halide Anions in CsX (X?=?I, Br, Cl) on the Microstructure and Photovoltaic Performance of FAPbI3-Based Perovskite Solar Cells
RRL Solar 6, 8(2022) 2200345
Impact of Halide Anions in CsX (X?=?I, Br, Cl) on the Microstructure and Photovoltaic Performance of FAPbI3-Based Perovskite Solar Cells
RRL Solar 6, 8(2022) 2200345
Peng J, Kremer F, Walter D, Wu Y, Ji Y, Xiang J, Liu W, Duong T, Shen H, Lu T, Brink F, Zhong D, Li L, Lee Cheong Lem O, Liu Y, Weber K, White T, Catchpole K
Centimetre-scale perovskite solar cells with fill factors of more than 86 per cent
Nature 601, 7894(2022) 573-578
Centimetre-scale perovskite solar cells with fill factors of more than 86 per cent
Nature 601, 7894(2022) 573-578
Rocco D, Camacho Morales M, Xu L, Zilli A, Vinel V, Finazzi M, Celebrano M, Leo G, Rahmani M, Jagadish C, Tan H, Neshev D, De Angelis C
Second order nonlinear frequency generation at the nanoscale in dielectric platforms
Advances in Physics: X 7, 1(2022)
Second order nonlinear frequency generation at the nanoscale in dielectric platforms
Advances in Physics: X 7, 1(2022)
Pan W, Liu J, Zhang Z, Gu R, Suvorova A, Gain S, Wang H, Li Z, Fu L, Faraone L, Lei W
Large area van der Waals epitaxy of II–VI CdSe thin films for flexible optoelectronics and full-color imaging
Nano Research 15, 1(2022) 368�¢â?¬â??376
Large area van der Waals epitaxy of II–VI CdSe thin films for flexible optoelectronics and full-color imaging
Nano Research 15, 1(2022) 368�¢â?¬â??376
McClure J, Li Z, Fan M, Berg S, Armstrong R, Berg C, Ramstad T
Relative permeability as a stationary process: Energy fluctuations in immiscible displacement
Physics of Fluids 34, 9(2022)
Relative permeability as a stationary process: Energy fluctuations in immiscible displacement
Physics of Fluids 34, 9(2022)
Li Z, Li L, Wang F, Xu L, Gao Q, Alabadla A, Peng K, Vora K, Hattori H, Tan H, Jagadish C, Fu L
Investigation of light-matter interaction in single vertical nanowires in ordered nanowire arrays
Nanoscale 14, 9(2022) 3527-3536
Investigation of light-matter interaction in single vertical nanowires in ordered nanowire arrays
Nanoscale 14, 9(2022) 3527-3536
Lee Y, Gupta B, Tan H, Jagadish C, Oh J, Karuturi S
Ultrathin transparent metal capping layer on metal oxide carrier-selective contacts for Si solar cells
European Physical Journal - Special Topics 231(2022)
Ultrathin transparent metal capping layer on metal oxide carrier-selective contacts for Si solar cells
European Physical Journal - Special Topics 231(2022)
Wei H, Zhang Y, Zhang G, Cui J, Wang Y, Qin Y, Zhang X, Tan H, Liu J, Wu Y
In situ W/O Co-doped hollow carbon nitride tubular structures with enhanced visible-light-driven photocatalytic performance for hydrogen evolution
International Journal of Hydrogen Energy 46, -(2021) 234-246
In situ W/O Co-doped hollow carbon nitride tubular structures with enhanced visible-light-driven photocatalytic performance for hydrogen evolution
International Journal of Hydrogen Energy 46, -(2021) 234-246
Tournet J, Butson J, Narangari P, Dontu S, Gupta B, Lysevych M, Karuturi S, Tan H, Jagadish C
Narrow-Bandgap InGaAsP Solar Cell with TiO2 Carrier-Selective Contact
Physica Status Solidi: Rapid Research Letters 15, 11(2021)
Narrow-Bandgap InGaAsP Solar Cell with TiO2 Carrier-Selective Contact
Physica Status Solidi: Rapid Research Letters 15, 11(2021)
Trendafilov S, Allen J, Allen M, Dev S, Li Z, Fu L, Jagadish C
Light Absorption in Nanowire Photonic Crystal Slabs and the Physics of Exceptional Points: The Shape Shifter Modes
Sensors 21, 16(2021) 1-10
Light Absorption in Nanowire Photonic Crystal Slabs and the Physics of Exceptional Points: The Shape Shifter Modes
Sensors 21, 16(2021) 1-10
Tu C, Fränzl M, Gao Q, Tan H, Jagadish C, Schmitzer H, Wagner H
Lasing from InP Nanowire Photonic Crystals on InP Substrate
Advanced Optical Materials 9, 2001745(2021)
Lasing from InP Nanowire Photonic Crystals on InP Substrate
Advanced Optical Materials 9, 2001745(2021)
Wang B, Hong X, Wang K, Chen X, Liu S, Krolikowski W, Lu P, Sheng Y
Nonlinear detour phase holography
Nanoscale 13, 4(2021) 2693-2702
Nonlinear detour phase holography
Nanoscale 13, 4(2021) 2693-2702
Wang B, Liu S, Xu T, Zhao R, Lu P, Krolikowski W, Sheng Y
Nonlinear Talbot self-healing in periodically poled LiNbO3 crystal [Invited]
Chinese Optics Letters 19, 6(2021)
Nonlinear Talbot self-healing in periodically poled LiNbO3 crystal [Invited]
Chinese Optics Letters 19, 6(2021)
Wang D, Liu X, Kang Y, Wang X, Wu Y, Fang S, Yu H, Memon M, Zhang H, Hu W, Fu L
Bidirectional photocurrent in p–n heterojunction nanowires
Nature Electronics 4, 9(2021) 645-652
Bidirectional photocurrent in p–n heterojunction nanowires
Nature Electronics 4, 9(2021) 645-652
Su Z, Wang N, Tan H, Jagadish C
2D Carrier Localization at the Wurtzite-Zincblende Interface in Novel Layered InP Nanomembranes
ACS Photonics 8, 6(2021) 1735-1745
2D Carrier Localization at the Wurtzite-Zincblende Interface in Novel Layered InP Nanomembranes
ACS Photonics 8, 6(2021) 1735-1745
Wang H, Fang W, Xu T, Xia H, Xie R, Zhou X, Ge X, Liu W, Zhu Y, Sun L, Fu L
Slowing Hot-Electron Relaxation in Mix-Phase Nanowires for Hot-Carrier Photovoltaics
Nano Letters 21, 18(2021) 7761-7768
Slowing Hot-Electron Relaxation in Mix-Phase Nanowires for Hot-Carrier Photovoltaics
Nano Letters 21, 18(2021) 7761-7768
Wang H, Wang F, Xia H, Wang P, Li T, Li J, Wang Z, Sun J, Wu P, Ye J, Fu L
Direct observation and manipulation of hot electrons at room temperature
National Science Review 8, 9(2021) 1-9
Direct observation and manipulation of hot electrons at room temperature
National Science Review 8, 9(2021) 1-9
Wang N, Wong W, Yuan X, Li L, Jagadish C, Tan H
Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy
Small 17, 21(2021)
Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy
Small 17, 21(2021)
Zhang D, Liang W, Sharma A, Butson J, Gopakumar Saraswathyvilasam A, Beck F, Catchpole K, Karuturi S
Ultrathin HfO2 passivated silicon photocathodes for efficient alkaline water splitting
Applied Physics Letters 119, 19(2021) 1-7
Ultrathin HfO2 passivated silicon photocathodes for efficient alkaline water splitting
Applied Physics Letters 119, 19(2021) 1-7
Wei S, John A, Karawdeniya B, Li Z, Zhang F, Vora K, Tan H, Jagadish C, Murugappan K, Tricoli A, Fu L
Semiconductor Nanowire Arrays for High-Performance Miniaturized Chemical Sensing
Advanced Functional Materials 32, 5(2021)
Semiconductor Nanowire Arrays for High-Performance Miniaturized Chemical Sensing
Advanced Functional Materials 32, 5(2021)
Wong W, Su Z, Wang N, Jagadish C, Tan H
Epitaxially Grown InP Micro-Ring Lasers
Nano Letters 21, 13(2021) 5681-5688
Epitaxially Grown InP Micro-Ring Lasers
Nano Letters 21, 13(2021) 5681-5688
Yao S, Wei H, Zhang Y, Zhang X, Wang Y, Liu J, Tan H, Xie T, Wu Y
Controlled growth of porous oxygen-deficient NiCo2O4 nanobelts as high-efficiency electrocatalysts for oxygen evolution reaction
Catalysis Science and Technology 11, 1(2021) 264-271
Controlled growth of porous oxygen-deficient NiCo2O4 nanobelts as high-efficiency electrocatalysts for oxygen evolution reaction
Catalysis Science and Technology 11, 1(2021) 264-271
Yuan X, Liu H, Liu S, Zhang R, Wang Y, He J, Tan H, Jagadish C
Thermodynamic properties of metastable wurtzite InP nanosheets
Journal of Physics D: Applied Physics 54, 50(2021) 1-9
Thermodynamic properties of metastable wurtzite InP nanosheets
Journal of Physics D: Applied Physics 54, 50(2021) 1-9
Yuan X, Pan D, Zhou Y, Zhang X, Peng K, Zhao B, Deng M, He J, Tan H, Jagadish C
Selective area epitaxy of III-V nanostructure arrays and networks: Growth, applications, and future directions
Applied Physics Reviews 8, 2(2021) 1-25
Selective area epitaxy of III-V nanostructure arrays and networks: Growth, applications, and future directions
Applied Physics Reviews 8, 2(2021) 1-25
Zhang F, Zhang X, Li Z, Yi R, Wang N, Xu X, Azimi Z, Li L, Lysevych M, Gan X, Lu Y, Tan H, Jagadish C, Fu L
A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications
Advanced Functional Materials 32, 3(2021)
A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications
Advanced Functional Materials 32, 3(2021)
Zhang X, Han H, Fu B, Wang N, Liu Y, Yang C
Growth Mechanism of InP Nanostructure Arrays by Self-Catalyzed Selective Area Epitaxy: A Deep Understanding of Thermodynamic and Kinetic Theories
Crystal Growth & Design 21, 2(2021) 988-994
Growth Mechanism of InP Nanostructure Arrays by Self-Catalyzed Selective Area Epitaxy: A Deep Understanding of Thermodynamic and Kinetic Theories
Crystal Growth & Design 21, 2(2021) 988-994
Zhang X, Yi R, Gagrani N, Li Z, Zhang F, Gan X, Yao X, Yuan X, Wang N, Zhao J, Chen P, Lu W, Fu L, Tan H, Jagadish C
Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers
ACS Nano 15, 5(2021) 9126-9133
Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers
ACS Nano 15, 5(2021) 9126-9133
Zhu Y, Raj V, Li Z, Tan H, Jagadish C, Fu L
Self-Powered InP Nanowire Photodetector for Single-Photon Level Detection at Room Temperature
Advanced Materials 33, 49(2021) 1-9
Self-Powered InP Nanowire Photodetector for Single-Photon Level Detection at Room Temperature
Advanced Materials 33, 49(2021) 1-9
Zhu Y, SUN X, Tang Y, Fu L, Lu Y
Two-dimensional materials for light emitting applications: Achievement, challenge and future perspectives
Nano Research 14, 6(2021) 1912-1936
Two-dimensional materials for light emitting applications: Achievement, challenge and future perspectives
Nano Research 14, 6(2021) 1912-1936
Zhu Y, Wang B, Li Z, Zhang J, Tang Y, Torres Alvarez J, Lipinski W, Fu L, Lu Y
A High-Efficiency Wavelength-Tunable Monolayer LED with Hybrid Continuous-Pulsed Injection
Advanced Materials 33, 29(2021)
A High-Efficiency Wavelength-Tunable Monolayer LED with Hybrid Continuous-Pulsed Injection
Advanced Materials 33, 29(2021)
Seidl J, Gluschke J, Yuan X, Tan H, Jagadish C, Caroff-Gaonac'h P, Micolich A
Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins
ACS Nano 15, 4(2021) 7226�¢â?¬â??7236
Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins
ACS Nano 15, 4(2021) 7226�¢â?¬â??7236
Sharma A, Duong T, Liu P, Soo J, Yan D, Zhang D, Riaz A, Samundsett C, Shen H, Yang C, Karuturi S, Catchpole K, Beck F
Direct solar to hydrogen conversion enabled by silicon photocathodes with carrier selective passivated contacts
Sustainable Energy & Fuels 6, 2(2021) 349-360
Direct solar to hydrogen conversion enabled by silicon photocathodes with carrier selective passivated contacts
Sustainable Energy & Fuels 6, 2(2021) 349-360
Raj V, Chugh D, Black L, Ismael M, Li L, Kremer F, MacDonald D, Tan H, Jagadish C
Passivation of InP solar cells using large area hexagonal-BN layers
npj 2D Materials and Applications 5(2021) 1-8
Passivation of InP solar cells using large area hexagonal-BN layers
npj 2D Materials and Applications 5(2021) 1-8
Rashidi Shahgoli M, Tan H, Mokkapati S
Stable, multi-mode lasing in the strong localization regime from InP random nanowire arrays at low temperature
Optica 8, 9(2021) 1160-1166
Stable, multi-mode lasing in the strong localization regime from InP random nanowire arrays at low temperature
Optica 8, 9(2021) 1160-1166
Rashidi Shahgoli M, Li Z, Jagadish C, Mokkapati S, Tan H
Controlling the lasing modes in random lasers operating in the Anderson localization regime
Optics Express 29, 21(2021) 33548-33557
Controlling the lasing modes in random lasers operating in the Anderson localization regime
Optics Express 29, 21(2021) 33548-33557
Lee Y, Tan H, Jagadish C, Karuturi S
Controlled Cracking for Large-Area Thin Film Exfoliation: Working Principles, Status, and Prospects
ACS Applied Electronic Materials 3, 1(2021) 145-162
Controlled Cracking for Large-Area Thin Film Exfoliation: Working Principles, Status, and Prospects
ACS Applied Electronic Materials 3, 1(2021) 145-162
Lee Y, Gupta B, Tan H, Jagadish C, Oh J, Karuturi S
Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting
iScience 24, 8(2021)
Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting
iScience 24, 8(2021)
Kret J, Parola S, Martinez F, Vauthelin A, Tournet J, Rouillard Y, Tournie E, Cuminal Y
Modeling and Characterization of an MBE-Grown Concentrator P-N GaSb Solar Cells Using a Pseudo-3D Model
IEEE Journal of Photovoltaics 11, 4(2021) 1032-1039
Modeling and Characterization of an MBE-Grown Concentrator P-N GaSb Solar Cells Using a Pseudo-3D Model
IEEE Journal of Photovoltaics 11, 4(2021) 1032-1039
Koskinen T, Khayrudinov V, Emadi F, Jiang H, Haggrén T, Lipsanen H, Tittonen I
Thermoelectric Characteristics of InAs Nanowire Networks Directly Grown on Flexible Plastic Substrates
ACS Applied Energy Materials 4, 12(2021) 14727-14734
Thermoelectric Characteristics of InAs Nanowire Networks Directly Grown on Flexible Plastic Substrates
ACS Applied Energy Materials 4, 12(2021) 14727-14734
Jevtics D, Smith J, McPhillimy J, Guilhabert B, Hill P, Klitis C, Hurtado A, Sorel M, Tan H, Jagadish C, Dawson M, Strain M
Spatially dense integration of micron-scale devices from multiple materials on a single chip via transfer-printing
Optical Materials Express 11, 10(2021) 3567-3576
Spatially dense integration of micron-scale devices from multiple materials on a single chip via transfer-printing
Optical Materials Express 11, 10(2021) 3567-3576
Herring A, Sun C, Armstrong R, Li Z, McClure J, Saadatfar M
Evolution of Bentheimer Sandstone Wettability During Cyclic scCO2-Brine Injections
Water Resources Research 57, 11(2021) 1-22
Evolution of Bentheimer Sandstone Wettability During Cyclic scCO2-Brine Injections
Water Resources Research 57, 11(2021) 1-22
Duong T, Pham H, Yin Y, Peng J, MAHMUD M, Wu Y, Shen H, Zheng J, Tran P, Lu T, Li L, Kumar A, Andersson G, Ho-Baillie A, Liu Y, White T, Weber K, Catchpole K
Efficient and stable wide bandgap perovskite solar cells through surface passivation with long alkyl chain organic cations
Journal of Materials Chemistry A 9, 34(2021) 18454�¢â?¬â??18465
Efficient and stable wide bandgap perovskite solar cells through surface passivation with long alkyl chain organic cations
Journal of Materials Chemistry A 9, 34(2021) 18454�¢â?¬â??18465
Chen X, Liu D, Liu S, Mazur L, Liu X, Wei X, Xu Z, Wang J, Sheng Y, Wei Z, Krolikowski W
Optical Induction and Erasure of Ferroelectric Domains in Tetragonal PMN-38PT Crystals
Advanced Optical Materials 10, 4(2021)
Optical Induction and Erasure of Ferroelectric Domains in Tetragonal PMN-38PT Crystals
Advanced Optical Materials 10, 4(2021)
Li Y, Wang Y, Cai R, Yu C, Zhang J, Wu J, Zhang Y, Tan H, Jagadish C, Wu Y
Tunable Synthesis of 3D Niobium Oxynitride Nanosheets for Lithium-Ion Hybrid Capacitors with High Energy/Power Density
ACS Sustainable Chemistry & Engineering 9, 43(2021) 14569-14578
Tunable Synthesis of 3D Niobium Oxynitride Nanosheets for Lithium-Ion Hybrid Capacitors with High Energy/Power Density
ACS Sustainable Chemistry & Engineering 9, 43(2021) 14569-14578
Camacho Morales M, Rocco D, Xu L, Gili V, Dimitrov N, Stoyanov L, Ma Z, Komar A, Lysevych M, Karouta F, Dreischuh A, Tan H, Leo G, De Angelis C, Jagadish C, Miroshnichenko A, Rahmani M, Neshev D
Infrared upconversion imaging in nonlinear metasurfaces
Advanced Photonics 3, 3(2021)
Infrared upconversion imaging in nonlinear metasurfaces
Advanced Photonics 3, 3(2021)
Cai J, Wei H, Zhang Y, Cai R, Zhang X, Wang Y, Liu J, Tan H, Xie T, Wu Y
Designed Construction of SrTiO3/SrSO4/Pt Heterojunctions with Boosted Photocatalytic H2 Evolution Activity
Chemistry, A European Journal 27, 25(2021) 7300�¢â?¬â??7306
Designed Construction of SrTiO3/SrSO4/Pt Heterojunctions with Boosted Photocatalytic H2 Evolution Activity
Chemistry, A European Journal 27, 25(2021) 7300�¢â?¬â??7306
Butson J, Sharma A, Chen H, Wang Y, Lee Y, Varadhan P, Tsampas M, Zhao C, Tricoli A, Tan H, Jagadish C, Karuturi S
Surface-Structured Cocatalyst Foils Unraveling a Pathway to High-Performance Solar Water Splitting
Advanced Energy Materials 12, 1(2021) 1-11
Surface-Structured Cocatalyst Foils Unraveling a Pathway to High-Performance Solar Water Splitting
Advanced Energy Materials 12, 1(2021) 1-11
Bera K, Roy A, Chugh D, Wong-Leung J, Tan H, Jagadish C
Role of defects and grain boundaries in the thermal response of wafer-scale hBN films
Nanotechnology 32, 7(2021)
Role of defects and grain boundaries in the thermal response of wafer-scale hBN films
Nanotechnology 32, 7(2021)
Azimi Z, Gopakumar Saraswathyvilasam A, Ameruddin A, Li L, Truong T, Nguyen H, Tan H, Jagadish C, Wong-Leung J
Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires
Nano Research 15(2021) 3695-3703
Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires
Nano Research 15(2021) 3695-3703
Azimi Z, Gagrani N, Qu J, Lee Cheong Lem O, Mokkapati S, Cairney J, Zheng R, Tan H, Jagadish C, Wong-Leung J
Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications
Nanoscale Horizons 6, 7(2021) 559-567
Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications
Nanoscale Horizons 6, 7(2021) 559-567
Aman G, Mohammadi F, Fraenzl M, Lysevych M, Tan H, Jagadish C, Schmitzer H, Cahay M, Wagner H
Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires
Scientific Reports 11, 1(2021)
Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires
Scientific Reports 11, 1(2021)
Alekseev P, Geydt P, Khayrudinov V, Bespalova K, Borodin B, Kirilenko , Reznik R, Nashchekin , Haggrén T, Lähderanta E, Cirlin G, Lipsanen H, Dunaevskiy M
Effect of crystal structure on the Young's modulus of GaP nanowires
Nanotechnology 32, 38(2021)
Effect of crystal structure on the Young's modulus of GaP nanowires
Nanotechnology 32, 38(2021)
Li C, Zhang X, Zhang Q, Xiao Y, Fu Y, Tan H, Liu J, Wu Y
Theoretical understanding for anchoring effect of MOFs for lithium-sulfur batteries
Computational and Theoretical Chemistry 1196(2021) 1-9
Theoretical understanding for anchoring effect of MOFs for lithium-sulfur batteries
Computational and Theoretical Chemistry 1196(2021) 1-9
Chen X, Yin H, Liu S, Zhao B, Wang J, Sheng Y, Wei Z, Krolikowski W
Experimental and theoretical research on second harmonic optical vortex generated by laser inscribed 3D holograms
International Journal of Infrared and Millimeter Waves 40, 1(2021) 102-107
Experimental and theoretical research on second harmonic optical vortex generated by laser inscribed 3D holograms
International Journal of Infrared and Millimeter Waves 40, 1(2021) 102-107
Zhang M, Hu X, Li X, Li R, Yu L, Fan X, Wang N, Huang C, Li Y
Graphdiyne Visible-Light Photodetector with Ultrafast Detectivity
Advanced Optical Materials 9(2021)
Graphdiyne Visible-Light Photodetector with Ultrafast Detectivity
Advanced Optical Materials 9(2021)
Peng J, Walter D, Ren Y, Tebyetekerwa M, Wu Y, Duong T, Lin Q, Juntao L, Lu T, MAHMUD M, Lee Cheong Lem O, Zhao S, Liu W, Liu Y, Shen H, Li L, Kremer F, Nguyen H, Choi D, Weber K, Catchpole K, White T
Nanoscale localized contacts for high fill factors in polymer-passivated perovskite solar cells
Science 371, 6527(2021) 390-395
Nanoscale localized contacts for high fill factors in polymer-passivated perovskite solar cells
Science 371, 6527(2021) 390-395
Li Z, Trendafilov S, Zhang F, Allen M, Allen J, Dev S, Pan W, Yu Y, Gao Q, Yuan X, Yang I, Zhu Y, Peng S, Bhat A, Lei W, Tan H, Jagadish C, Fu L
Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging
Nano Letters 21(2021) 7388-7395
Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging
Nano Letters 21(2021) 7388-7395
Rashidi Shahgoli M, Haggren T, Su Z, Jagadish C, Mokkapati S, Tan H
Managing Resonant and Nonresonant Lasing Modes in GaAs Nanowire Random Lasers
Nano Letters 21, 9(2021) 3901-3907
Managing Resonant and Nonresonant Lasing Modes in GaAs Nanowire Random Lasers
Nano Letters 21, 9(2021) 3901-3907
Raj V, Jagadish C, Gautam V
"Understanding, engineering, and modulatingthe growth of neural networks: Aninterdisciplinary approach"
Biophysics Reviews 2, 2(2021)
"Understanding, engineering, and modulatingthe growth of neural networks: Aninterdisciplinary approach"
Biophysics Reviews 2, 2(2021)
Raj V, Haggrén T, Wong W, Tan H, Jagadish C
Topical review: pathways toward cost-effective single-junction III–V solar cells
Journal of Physics D: Applied Physics 55, 14(2021) 35
Topical review: pathways toward cost-effective single-junction III–V solar cells
Journal of Physics D: Applied Physics 55, 14(2021) 35
Raj V, Haggrén T, Wong W, Tan H, Jagadish C
Topical review: Pathways toward cost-effective single-junction III-V solar cells [DUPLICATION of u9912193xPUB577]
Journal of Physics D: Applied Physics 55, 14(2021) 1-35
Topical review: Pathways toward cost-effective single-junction III-V solar cells [DUPLICATION of u9912193xPUB577]
Journal of Physics D: Applied Physics 55, 14(2021) 1-35
Raj V, Haggren T, Tournet J, Tan H, Jagadish C
Electron-Selective Contact for GaAs Solar Cells
ACS Applied Energy Materials 4(2021) 1356-1364
Electron-Selective Contact for GaAs Solar Cells
ACS Applied Energy Materials 4(2021) 1356-1364
Pham H, Yin Y, Andersson G, Weber K, Duong T, Wong-Leung J
Unraveling the influence of CsCl/MACl on the formation of nanotwins, stacking faults and cubic supercell structure in FA-based perovskite solar cells
Nano Energy 87(2021) 1-12
Unraveling the influence of CsCl/MACl on the formation of nanotwins, stacking faults and cubic supercell structure in FA-based perovskite solar cells
Nano Energy 87(2021) 1-12
Narangari P, Butson J, Tan H, Jagadish C, Karuturi S
Surface-Tailored InP Nanowires via Self-Assembled Au Nanodots for Efficient and Stable Photoelectrochemical Hydrogen Evolution
Nano Letters 21, 16(2021) 6967-6974
Surface-Tailored InP Nanowires via Self-Assembled Au Nanodots for Efficient and Stable Photoelectrochemical Hydrogen Evolution
Nano Letters 21, 16(2021) 6967-6974
Mendelson N, Chugh D, Reimers J, Cheng T, Gottscholl A, Long H, Mellor C, Zettl A, Dyakonov V, Beton P, Novikov S, Jagadish C, Tan H
Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride
Nature Materials 20(2021) 321-328
Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride
Nature Materials 20(2021) 321-328
McClure J, Li Z, Berrill M, Ramstad T
The LBPM software package for simulatingmultiphase flow on digital images of porous rocks
Computational Geosciences 25(2021) 871�¢â?¬â??895
The LBPM software package for simulatingmultiphase flow on digital images of porous rocks
Computational Geosciences 25(2021) 871�¢â?¬â??895
Mazur L, Liu S, Chen X, Krolikowski W, Sheng Y
Localized Ferroelectric Domains via Laser Poling in Monodomain Calcium Barium Niobate Crystal
Laser and Photonics Reviews 15, 9(2021) 1-7
Localized Ferroelectric Domains via Laser Poling in Monodomain Calcium Barium Niobate Crystal
Laser and Photonics Reviews 15, 9(2021) 1-7
MAHMUD M, Pham H, Duong T, Yin Y, Peng J, Wu Y, Liang W, Li L, Kumar A, Shen H, Walter D, Nguyen H, Mozaffari N, Tabi G, Andersson G, Catchpole K, Weber K, White T
Combined Bulk and Surface Passivation in Dimensionally Engineered 2D-3D Perovskite Films via Chlorine Diffusion
Advanced Functional Materials 31, 46(2021)
Combined Bulk and Surface Passivation in Dimensionally Engineered 2D-3D Perovskite Films via Chlorine Diffusion
Advanced Functional Materials 31, 46(2021)
Lu H, Tournet J, Dastafkan K, Liu Y, Ng Y, Karuturi S, Zhao C, Yin Z
Noble-Metal-Free Multicomponent Nanointegration for Sustainable Energy Conversion
Chemical Reviews 121, 17(2021) 10271�¢â?¬â??10366
Noble-Metal-Free Multicomponent Nanointegration for Sustainable Energy Conversion
Chemical Reviews 121, 17(2021) 10271�¢â?¬â??10366
Liu Z, Yuan X, Wang S, Liu S, Tan H, Jagadish C
Nanomechanical behavior of single taper-free GaAs nanowires unravelled by in-situ TEM mechanical testing and molecular dynamics simulation
Materials Science and Engineering A 806(2021)
Nanomechanical behavior of single taper-free GaAs nanowires unravelled by in-situ TEM mechanical testing and molecular dynamics simulation
Materials Science and Engineering A 806(2021)
Liu J, Xiaonan L, Zhang Q, Liang X, Yan J, Tan H, Yu Y, Wu Y
Integration of nickel phosphide nanodot-enriched 3D graphene-like carbon with carbon fibers as self-supported sulfur hosts for advanced lithium sulfur batteries
Electrochimica Acta 382(2021)
Integration of nickel phosphide nanodot-enriched 3D graphene-like carbon with carbon fibers as self-supported sulfur hosts for advanced lithium sulfur batteries
Electrochimica Acta 382(2021)
Liu J, Li K, Zhang Q, Zhang X, Liang X, Yan J, Tan H, Yu Y, Wu Y
3D Tungsten Disulfide/Carbon Nanotube Networks as Separator Coatings and Cathode Additives for Stable and Fast Lithium-Sulfur Batteries
ACS Applied Materials and Interfaces 13, 38(2021) 45547-45557
3D Tungsten Disulfide/Carbon Nanotube Networks as Separator Coatings and Cathode Additives for Stable and Fast Lithium-Sulfur Batteries
ACS Applied Materials and Interfaces 13, 38(2021) 45547-45557
Liu G, Narangari P, Trinh Q, Tu W, Kraft M, Tan H, Jagadish C, Choksi T, Ager J, Karuturi S, Xu R
Manipulating Intermediates at the Au-TiO2 Interface over InP Nanopillar Array for Photoelectrochemical CO2 Reduction
ACS Catalysis 11, 18(2021) 11416-11428
Manipulating Intermediates at the Au-TiO2 Interface over InP Nanopillar Array for Photoelectrochemical CO2 Reduction
ACS Catalysis 11, 18(2021) 11416-11428
Soo J, Chai L, Ang B, Ong B
Enhancing the Antibacterial Performance of Titanium Dioxide Nanofibers by Coating with Silver Nanoparticles
ACS Applied Nano Materials 3, 6(2020) 5743-5751
Enhancing the Antibacterial Performance of Titanium Dioxide Nanofibers by Coating with Silver Nanoparticles
ACS Applied Nano Materials 3, 6(2020) 5743-5751
Tournet J, Lee Y, Karuturi S, Tan H, Jagadish C
III-V Semiconductor Materials for Solar Hydrogen Production: Status and Prospects
ACS Energy Letters 5, 2(2020) 611-622
III-V Semiconductor Materials for Solar Hydrogen Production: Status and Prospects
ACS Energy Letters 5, 2(2020) 611-622
Tedeschi D, Fonseka H, Blundo E, del Aguila A, Guo Y, Tan H, Christianen P, Jagadish C, Polimeni A, De Luca M
Hole and Electron Effective Masses in Single InP Nanowires with a Wurtzite-Zincblende Homojunction
ACS Nano 14, 9(2020) 11613-11622
Hole and Electron Effective Masses in Single InP Nanowires with a Wurtzite-Zincblende Homojunction
ACS Nano 14, 9(2020) 11613-11622
Tang K, Zhang Y, Shi Y, Cui J, Shu X, Wang Y, Qin Y, Liu J, Tan H, Wu Y
Fabrication of WO3/TiO2 core-shell nanowire arrays: Structure design and high electrochromic performance
Electrochimica Acta 330, 0(2020)
Fabrication of WO3/TiO2 core-shell nanowire arrays: Structure design and high electrochromic performance
Electrochimica Acta 330, 0(2020)
Raj V, Tan H, Jagadish C
Non-epitaxial carrier selective contacts for III-V solar cells: A review
Applied Materials Today 18(2020)
Non-epitaxial carrier selective contacts for III-V solar cells: A review
Applied Materials Today 18(2020)
Smith L, Batey J, Alexander-Webber J, Fan Y, Hsieh Y, Fung S, Jevtics D, Robertson J, Guilhabert B, Strain M, Dawson M, Hurtado A, Griffiths J, Jagadish C, Beere H, Burton O, Hofmann S, Chen T, Ritchie D, Kelly M, Joyce H, Smith C
High-throughput electrical characterization of nanomaterials from room to cryogenic temperatures
ACS Nano 14, 11(2020) 15293-15305
High-throughput electrical characterization of nanomaterials from room to cryogenic temperatures
ACS Nano 14, 11(2020) 15293-15305
Shi Y, Sun M, Zhang Y, Cui J, Shu X, Wang Y, Qin Y, Liu J, Tan H, Wu Y
Rational Design of Oxygen Deficiency-Controlled Tungsten Oxide Electrochromic Films with an Exceptional Memory Effect
ACS Applied Materials and Interfaces 12, 29(2020) 32658-32665
Rational Design of Oxygen Deficiency-Controlled Tungsten Oxide Electrochromic Films with an Exceptional Memory Effect
ACS Applied Materials and Interfaces 12, 29(2020) 32658-32665
Shi Y, Sun M, Zhang Y, Cui J, Wang Y, Shu X, Qin Y, Tan H, Liu J, Wu Y
Structure modulated amorphous/crystalline WO3 nanoporous arrays with superior electrochromic energy storage performance
Solar Energy Materials and Solar Cells 212(2020) 1-10
Structure modulated amorphous/crystalline WO3 nanoporous arrays with superior electrochromic energy storage performance
Solar Energy Materials and Solar Cells 212(2020) 1-10
Xu L, Saerens G, Timofeeva M, Smirnova D, Volkovskaya I, Lysevych M, Camacho Morales M, Cai M, Zangeneh Kamali K, Huang L, Karouta F, Tan H, Jagadish C, Miroshnichenko A, Grange R, Neshev D, Rahmani M
Forward and Backward Switching of Nonlinear Unidirectional Emission from GaAs Nanoantennas
ACS Nano 14(2020) 1379-1389
Forward and Backward Switching of Nonlinear Unidirectional Emission from GaAs Nanoantennas
ACS Nano 14(2020) 1379-1389
Wang W, He J, Cai L, Wang Z, Karuturi S, Gao P, Shen W
Solution-Processed Electron-Selective Contacts Enabling 21.8% Efficiency Crystalline Silicon Solar Cells
RRL Solar 4, 12(2020)
Solution-Processed Electron-Selective Contacts Enabling 21.8% Efficiency Crystalline Silicon Solar Cells
RRL Solar 4, 12(2020)
Zhao B, Lockrey M, Wang N, Caroff-Gaonac'h P, Yuan X, Li L, Wong-Leung J, Tan H, Jagadish C
Highly regular rosette-shaped cathodoluminescence in GaN self-assembled nanodisks and nanorods
Nano Research 13, 9(2020) 2500-2505
Highly regular rosette-shaped cathodoluminescence in GaN self-assembled nanodisks and nanorods
Nano Research 13, 9(2020) 2500-2505
Yang I, Kim S, Niihori M, Alabadla A, Li Z, Li L, Lockrey M, Choi D, Aharonovich I, Wong-Leung J, Tan H, Jagadish C, Fu L
Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes
Nano Energy 71(2020)
Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes
Nano Energy 71(2020)
Yew R, Tan H, Jagadish C, Karuturi S
Three-dimensional ordered macroporous TiO2-TaOxNy heterostructure for photoelectrochemical water splitting
Journal of Physical Chemistry C 124, 44(2020) 24135-24144
Three-dimensional ordered macroporous TiO2-TaOxNy heterostructure for photoelectrochemical water splitting
Journal of Physical Chemistry C 124, 44(2020) 24135-24144
Yuan X, Liu K, Skalsky S, Parkinson P, Fang L, He J, Tan H, Jagadish C
Carrier dynamics and recombination mechanisms in InP twinning superlattice nanowires
Optics Express 28, 11(2020) 16795-16804
Carrier dynamics and recombination mechanisms in InP twinning superlattice nanowires
Optics Express 28, 11(2020) 16795-16804
Yuan X, Wang N, Tian Z, Zhang F, Li L, Lockrey M, He J, Jagadish C, Tan H
Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays
Nanoscale Horizons 5, 11(2020) 1530-1537
Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays
Nanoscale Horizons 5, 11(2020) 1530-1537
Zhang D, Soo J, Tan H, Jagadish C, Catchpole K, Karuturi S
Earth-Abundant Amorphous Electrocatalysts for Electrochemical Hydrogen Production: A Review
Advanced Energy & Sustainability Research 2, 3(2020) 1-27
Earth-Abundant Amorphous Electrocatalysts for Electrochemical Hydrogen Production: A Review
Advanced Energy & Sustainability Research 2, 3(2020) 1-27
Zhang M, Li Y, Li X, Wang N, Huang C
Graphdiyne Ink for Ionic Liquid Gated Printed Transistor
Advanced Electronic Materials 6, 7(2020)
Graphdiyne Ink for Ionic Liquid Gated Printed Transistor
Advanced Electronic Materials 6, 7(2020)
Zhang M, Wang X, Sun H, He J, Wang N, Long Y, Huang C, Li Y
Induced Ferromagnetic Order of Graphdiyne Semiconductors by Introducing a Heteroatom
ACS Central Science 6, 6(2020) 950-958
Induced Ferromagnetic Order of Graphdiyne Semiconductors by Introducing a Heteroatom
ACS Central Science 6, 6(2020) 950-958
Zhang Q, Zhang X, Xiao Y, Li C, Tan H, Liu J, Wu Y
Theoretical Insights into the Favorable Functionalized Ti2 C-Based MXenes for Lithium-Sulfur Batteries
ACS Omega 5, 45(2020) 29272-29283
Theoretical Insights into the Favorable Functionalized Ti
ACS Omega 5, 45(2020) 29272-29283
Zhang X, Yao X, Li Z, Zhou C, Yuan X, Tang Z, Hu W, Gan X, Zou J, Chen P, Lu W
Surface-States-Modulated High-Performance InAs Nanowire Phototransistor
Journal of Physical Chemistry Letters 11, 15(2020) 6413-6419
Surface-States-Modulated High-Performance InAs Nanowire Phototransistor
Journal of Physical Chemistry Letters 11, 15(2020) 6413-6419
Pournia S, Linser S, Jnawali G, Jackson H, Smith L, Ameruddin A, Caroff-Gaonac'h P, Wong-Leung J, Tan H, Jagadish C, Joyce H
Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy
Nano Research 13, 6(2020) 1586-1591
Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy
Nano Research 13, 6(2020) 1586-1591
Raj V, Rougieux F, Fu L, Tan H, Jagadish C
Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts
IEEE Journal of Photovoltaics 10, 6(2020) 1657-1666
Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts
IEEE Journal of Photovoltaics 10, 6(2020) 1657-1666
Khayrudinov V, Remennyi M, Raj V, Alekseev P, Matveev B, Lipsanen H, Haggrén T
Direct Growth of Light-Emitting III-V Nanowires on Flexible Plastic Substrates
ACS Nano 14, 6(2020) 7484-7491
Direct Growth of Light-Emitting III-V Nanowires on Flexible Plastic Substrates
ACS Nano 14, 6(2020) 7484-7491
Postorino S, Sun J, Fiedler S, Lee Cheong Lem O, Palummo M, Camilli L
Interlayer bound wannier excitons in germanium sulfide
Materials 13, 16(2020) 1-11
Interlayer bound wannier excitons in germanium sulfide
Materials 13, 16(2020) 1-11
Fiedler S, Lee Cheong Lem O, Ton-That C, Schleuning M, Hofmann A, Phillips M
Correlative Study of Enhanced Excitonic Emission in ZnO Coated with Al Nanoparticles using Electron and Laser Excitation
Scientific Reports 10(2020)
Correlative Study of Enhanced Excitonic Emission in ZnO Coated with Al Nanoparticles using Electron and Laser Excitation
Scientific Reports 10(2020)
Jiang N, Joyce H, Parkinson P, Wong-Leung J, Tan H, Jagadish C
Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires
Frontiers in Chemistry 8(2020)
Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires
Frontiers in Chemistry 8(2020)
Chugh D, Adhikari S, Wong-Leung J, Lysevych M, Jagadish C, Tan H
Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN
Crystal Growth & Design 20, 3(2020) 1811-1819
Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN
Crystal Growth & Design 20, 3(2020) 1811-1819
Debroy S, Sivasubramani S, Vaidya G, Acharyya S, Acharyya A
Temperature and Size Effect on the Electrical Properties of Monolayer Graphene based Interconnects for Next Generation MQCA based Nanoelectronics
Scientific Reports 10, 1(2020)
Temperature and Size Effect on the Electrical Properties of Monolayer Graphene based Interconnects for Next Generation MQCA based Nanoelectronics
Scientific Reports 10, 1(2020)
Debroy S, Sivasubramani S, Vaidya G, Acharyya S, Acharyya A
Temperature and Size Effect on the Electrical Properties of Monolayer Graphene based Interconnects for Next Generation MQCA based Nanoelectronics
Scientific Reports 10, 1(2020)
Temperature and Size Effect on the Electrical Properties of Monolayer Graphene based Interconnects for Next Generation MQCA based Nanoelectronics
Scientific Reports 10, 1(2020)
Duong T, Pham H, Kho T, Phang S, Fong K, Yan D, Yin Y, Peng J, MAHMUD M, Gharibzadeh S, Nejand B, Hossain I, Khan M, Mozaffari N, Wu Y, Shen H, Zheng J, Mai H, Liang W, Samundsett C, Stocks M, McIntosh K, Andersson G, Lemmer U, Richards B, Liu Y, MacDonald D, Blakers A, Wong-Leung J, White T, Weber K, Catchpole K
High Efficiency Perovskite-Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite
Advanced Energy Materials 10, 9(2020) 1-15
High Efficiency Perovskite-Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite
Advanced Energy Materials 10, 9(2020) 1-15
Fiedler S, Lee Cheong Lem O, Ton-That C, Hoffmann A, Phillips M
Enhancement of the UV emission from gold/ZnO nanorods exhibiting no green luminescence
Optical Materials Express 10, 6(2020) 1476-1487
Enhancement of the UV emission from gold/ZnO nanorods exhibiting no green luminescence
Optical Materials Express 10, 6(2020) 1476-1487
Ghediya P, Chaudhuri T, Raj V, Vankhade D, Tan H, Jagadish C
Electrical Properties of Compact Drop-Casted Cu2SnS3 Films
Journal of Electronic Materials 49, 11(2020) 6403-6409
Electrical Properties of Compact Drop-Casted Cu2SnS3 Films
Journal of Electronic Materials 49, 11(2020) 6403-6409
Kauppinen C, Haggrén T, Lipsanen H, Sopanen M
Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN
Applied Physics Letters 116, 9(2020)
Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN
Applied Physics Letters 116, 9(2020)
Gluschke J, Seidl J, Tan H, Jagadish C, Caroff-Gaonac'h P, Micolich A
Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
Nanoscale 12, 39(2020) 20317-20325
Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
Nanoscale 12, 39(2020) 20317-20325
Gustafsson A, Jiang N, Zheng C, Etheridge J, Gao Q, Tan H, Jagadish C, Wong-Leung J
Cathodoluminescence visualisation of local thickness variations of GaAs/AlGaAs quantum-well tubes on nanowires
Nanotechnology 31, 42(2020) 1-10
Cathodoluminescence visualisation of local thickness variations of GaAs/AlGaAs quantum-well tubes on nanowires
Nanotechnology 31, 42(2020) 1-10
Haggrén T, Anttu N, Mantynen H, Tossi C, Kim M, Khayrudinov V, Lipsanen H
Management of light and scattering in InP NWs by dielectric polymer shell
Nanotechnology 31, 38(2020)
Management of light and scattering in InP NWs by dielectric polymer shell
Nanotechnology 31, 38(2020)
Hao J, Ma T, Chen X, Kuang Y, Li L, Li J, Ren F, Gu S, Tan H, Jagadish C, Ye J
Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum ?-Ga2 O3 on sapphire
Applied Surface Science 513(2020)
Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum ?-Ga
Applied Surface Science 513(2020)
He J, Wang W, Cai L, Lin H, Wang Z, Karuturi S, Gao P
Stable Electron-Selective Contacts for Crystalline Silicon Solar Cells Enabling Efficiency over 21.6%
Advanced Functional Materials 30, 50(2020)
Stable Electron-Selective Contacts for Crystalline Silicon Solar Cells Enabling Efficiency over 21.6%
Advanced Functional Materials 30, 50(2020)
Jevtics D, McPhillimy J, Guilhabert B, Alanis J, Tan H, Jagadish C, Dawson M, Hurtado A, Parkinson P, Strain M
Characterization, Selection, and Microassembly of Nanowire Laser Systems
Nano Letters 20, 3(2020) 1862-1868
Characterization, Selection, and Microassembly of Nanowire Laser Systems
Nano Letters 20, 3(2020) 1862-1868
Pham H, Duong T, Weber K, Wong-Leung J
Insights into Twinning Formation in Cubic and Tetragonal Multi-cation Mixed-Halide Perovskite
ACS Materials Letters 2, 4(2020) 415-424
Insights into Twinning Formation in Cubic and Tetragonal Multi-cation Mixed-Halide Perovskite
ACS Materials Letters 2, 4(2020) 415-424
Karuturi S, Shen H, Sharma A, Beck F, Varadhan P, Duong T, Narangari P, Zhang D, Wan Y, He J, Tan H, Jagadish C, Catchpole K
Over 17% Efficiency Stand-Alone Solar Water Splitting Enabled by Perovskite-Silicon Tandem Absorbers
Advanced Energy Materials 10, 28(2020) 1-9
Over 17% Efficiency Stand-Alone Solar Water Splitting Enabled by Perovskite-Silicon Tandem Absorbers
Advanced Energy Materials 10, 28(2020) 1-9
Fiedler S, Lee Cheong Lem O, Ton-That C, Phillips M
The role of surface depletion layer effects on the enhancement of the UV emission in ZnO induced by a nanostructured Al surface coating
Applied Surface Science 504(2020)
The role of surface depletion layer effects on the enhancement of the UV emission in ZnO induced by a nanostructured Al surface coating
Applied Surface Science 504(2020)
Khayrudinov V, Mäntynen H, Dhaka V, Perros A, Haggrén T, Jussila H, Lipsanen H
Hybrid GaAs nanowire-polymer device on glass: Al-doped ZnO (AZO) as transparent conductive oxide for nanowire based photovoltaic applications
Journal of Crystal Growth 548(2020) 1-4
Hybrid GaAs nanowire-polymer device on glass: Al-doped ZnO (AZO) as transparent conductive oxide for nanowire based photovoltaic applications
Journal of Crystal Growth 548(2020) 1-4
Liu G, Karuturi S, Chen H, Wang D, Ager J, Simonov A, Tricoli A
Enhancement of the photoelectrochemical water splitting by perovskite BiFeO3 via interfacial engineering
Solar Energy 202(2020) 198-203
Enhancement of the photoelectrochemical water splitting by perovskite BiFeO3 via interfacial engineering
Solar Energy 202(2020) 198-203
Peng K, Jevtics D, Zhang F, Sterzl S, Damry D, Rothmann M, Guilhabert B, Strain M, Tan H, Herz L, Fu L, Dawson M, Hurtado A, Jagadish C, Johnston M
Three-dimensional cross-nanowire networks recover full terahertz state
Science 368, 6490(2020) 510-513
Three-dimensional cross-nanowire networks recover full terahertz state
Science 368, 6490(2020) 510-513
Bera J, Chugh D, Patra A, Tan H, Jagadish C, Roy A
Strain distribution in wrinkled hBN films
Solid State Communications 310(2020)
Strain distribution in wrinkled hBN films
Solid State Communications 310(2020)
Patel J, Wright A, Lohmann K, Peng K, Xia C, Ball J, Noel N, Crothers T, Wong-Leung J, Snaith H, Herz L, Johnston M
Light Absorption and Recycling in Hybrid Metal Halide Perovskite Photovoltaic Devices
Advanced Energy Materials 10, 10(2020)
Light Absorption and Recycling in Hybrid Metal Halide Perovskite Photovoltaic Devices
Advanced Energy Materials 10, 10(2020)
McClure J, Ramstad T, Li Z, Armstrong R, Berg S
Modeling Geometric State for Fluids in Porous Media: Evolution of the Euler Characteristic
Transport in Porous Media 133(2020) 229�¢â?¬â??250
Modeling Geometric State for Fluids in Porous Media: Evolution of the Euler Characteristic
Transport in Porous Media 133(2020) 229�¢â?¬â??250
McClure J, Li Z, Sheppard A, Miller C
An adaptive volumetric flux boundary condition for lattice Boltzmann methods
Computers and Fluids 210(2020) 1-8
An adaptive volumetric flux boundary condition for lattice Boltzmann methods
Computers and Fluids 210(2020) 1-8
Luo M, Ren F, Gagrani N, Qiu K, Wang Q, Yu L, Ye J, Yan F, Zhang R, Tan H, Jagadish C, Ji X
Polarization-Independent Indium Phosphide Nanowire Photodetectors
Advanced Optical Materials 8, 17(2020) 8
Polarization-Independent Indium Phosphide Nanowire Photodetectors
Advanced Optical Materials 8, 17(2020) 8
Liu S, Mazur L, Krolikowski W, Sheng Y
Nonlinear Volume Holography in 3D Nonlinear Photonic Crystals
Laser and Photonics Reviews 14, 11(2020)
Nonlinear Volume Holography in 3D Nonlinear Photonic Crystals
Laser and Photonics Reviews 14, 11(2020)
Luo J, Cui J, Wang Y, Yu D, Qin Y, Zheng H, Shu X, Tan H, Zhang Y, Wu Y
Metal-organic framework-derived porous Cu2 O/Cu@C core-shell nanowires and their application in uric acid biosensor
Applied Surface Science 506(2020)
Metal-organic framework-derived porous Cu
Applied Surface Science 506(2020)
Liu D, Liu S, Mazur L, Wang B, Lu P, Krolikowski W, Sheng Y
Smart optically induced nonlinear photonic crystals for frequency conversion and control
Applied Physics Letters 116(2020)
Smart optically induced nonlinear photonic crystals for frequency conversion and control
Applied Physics Letters 116(2020)
Li Z, Yuan X, Gao Q, Yang I, Li L, Caroff-Gaonac'h P, Allen M, Allen J, Tan H, Jagadish C, Fu L
In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse
Nanotechnology 31, 24(2020)
In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse
Nanotechnology 31, 24(2020)
Li Z, McClure J, Middleton J, Varslot T, Sheppard A
Discretization limits of lattice-Boltzmann methods for studying immiscible two-phase flow in porous media
International Journal for Numerical Methods in Fluids 92(2020) 1162-1197
Discretization limits of lattice-Boltzmann methods for studying immiscible two-phase flow in porous media
International Journal for Numerical Methods in Fluids 92(2020) 1162-1197
Li Z, Allen J, Allen M, Tan H, Jagadish C, Fu L
Review on III-V semiconductor single nanowire-based room temperature infrared photodetectors
Materials 13, 6(2020)
Review on III-V semiconductor single nanowire-based room temperature infrared photodetectors
Materials 13, 6(2020)
Li Y, Wang Y, Cui G, Zhu T, Zhang J, Yu C, Cui J, Wu J, Tan H, Zhang Y, Wu Y
Carbon-Coated Self-Assembled Ultrathin T-Nb2 O5 Nanosheets for High-Rate Lithium-Ion Storage with Superior Cycling Stability
ACS Applied Energy Materials 3, 12(2020) 12037�¢�?â??12045
Carbon-Coated Self-Assembled Ultrathin T-Nb
ACS Applied Energy Materials 3, 12(2020) 12037�¢�?â??12045
Lee Y, Yang I, Tan H, Jagadish C, Karuturi S
Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap
ACS Applied Materials and Interfaces 12, 32(2020) 36380-36388
Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap
ACS Applied Materials and Interfaces 12, 32(2020) 36380-36388
Krishnamurthi V, Khan H, Ahmed T, Zavabeti A, Tawfik S, Jain S, Spencer M, Balendhran S, Crozier K, Li Z, Fu L, Mohiuddin M
Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors
Advanced Materials 32, -(2020) 1-10
Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors
Advanced Materials 32, -(2020) 1-10
Shi Y, Zhang Y, Tang K, Cui J, Shu X, Wang Y, Liu J, Jiang Y, Tan H, Wu Y
Designed growth of WO3/PEDOT core/shell hybrid nanorod arrays with modulated electrochromic properties
Chemical Engineering Journal 355(2019) 942-951
Designed growth of WO3/PEDOT core/shell hybrid nanorod arrays with modulated electrochromic properties
Chemical Engineering Journal 355(2019) 942-951
Wen B, Zhu Y, Yudistira D, Boes A, Zhang L, Yidirim T, Liu B, Yan H, SUN X, Zhou Y, Xue Y, Zhang Y, Fu L, Mitchell A, Zhang H, Lu Y
Ferroelectric-Driven Exciton and Trion Modulation in Monolayer Molybdenum and Tungsten Diselenides
ACS Nano 13, 5(2019) 5335-5343
Ferroelectric-Driven Exciton and Trion Modulation in Monolayer Molybdenum and Tungsten Diselenides
ACS Nano 13, 5(2019) 5335-5343
Stutz E, Friedl M, Burgess T, Tan H, Caroff-Gaonac'h P, Jagadish C, Fontcuberta i Morral A
Nanosails Showcasing Zn3As2 as an Optoelectronic-Grade Earth Abundant Semiconductor
Physica Status Solidi: Rapid Research Letters 13, 7(2019) 1-5
Nanosails Showcasing Zn3As2 as an Optoelectronic-Grade Earth Abundant Semiconductor
Physica Status Solidi: Rapid Research Letters 13, 7(2019) 1-5
Tang K, Zhang Y, Shi Y, Cui J, Shu X, Wang Y, Qin Y, Liu J, Tan H, Wu Y
Crystalline WO3 nanowires array sheathed with sputtered amorphous shells for enhanced electrochromic performance
Applied Surface Science 498(2019)
Crystalline WO3 nanowires array sheathed with sputtered amorphous shells for enhanced electrochromic performance
Applied Surface Science 498(2019)
Tedeschi D, De Luca M, Faria Junior P, del Águila A, Gao Q, Tan H, Scharf B, Christianen P, Jagadish C, Fabian J, Polimeni A
Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy
Physical Review B 99, 16(2019) 1-7
Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy
Physical Review B 99, 16(2019) 1-7
Truong T, Yan D, Samundsett C, Basnet R, Tebyetekerwa M, Li L, Kremer F, Cuevas A, MacDonald D, Nguyen H
Hydrogenation of Phosphorus-Doped Polycrystalline Silicon Films for Passivating Contact Solar Cells
ACS Applied Materials and Interfaces 11, 5(2019) 5554-5560
Hydrogenation of Phosphorus-Doped Polycrystalline Silicon Films for Passivating Contact Solar Cells
ACS Applied Materials and Interfaces 11, 5(2019) 5554-5560
Wang N, Yuan X, Zhang X, Gao Q, Zhao B, Li L, Lockrey M, Tan H, Jagadish C, Caroff-Gaonac'h P
Shape Engineering of InP Nanostructures by Selective Area Epitaxy
ACS Nano 13, 6(2019) 7261-7269
Shape Engineering of InP Nanostructures by Selective Area Epitaxy
ACS Nano 13, 6(2019) 7261-7269
Zhong Z, Li X, Wu J, Li C, Xie R, Yuan X, Niu X, Wang W, Luo X, Zhang G, Wang Z, Tan H, Jagadish C
Wavelength-tunable InAsP quantum dots in InP nanowires
Applied Physics Letters 115, 5(2019) 1-5
Wavelength-tunable InAsP quantum dots in InP nanowires
Applied Physics Letters 115, 5(2019) 1-5
Wong-Leung J, Yang I, Li Z, Karuturi S, Fu L, Tan H, Jagadish C
Engineering III-V Semiconductor Nanowires for Device Applications
Advanced Materials 32, 18(2019) 1904359
Engineering III-V Semiconductor Nanowires for Device Applications
Advanced Materials 32, 18(2019) 1904359
Yang I, Li Z, Wong-Leung J, Zhu Y, Gagrani A, Li L, Lockrey M, Nguyen H, Lu Y, Tan H, Jagadish C, Fu L
Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes
Nano Letters 19, 6(2019) 3821-3829
Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes
Nano Letters 19, 6(2019) 3821-3829
Yew R, Karuturi S, Liu J, Tan H, Wu Y, Jagadish C
Exploiting defects in TiO2 inverse opal for enhanced photoelectrochemical water splitting
Optics Express 27, 2(2019) 761-773
Exploiting defects in TiO2 inverse opal for enhanced photoelectrochemical water splitting
Optics Express 27, 2(2019) 761-773
Yu P, Besteiro L, Huang Y, Wu J, Fu L, Tan H, Jagadish C, Wiederrecht P, Govorov A, Wang Z
Broadband Metamaterial Absorbers
Advanced Optical Materials 7, 3(2019) 1-32
Broadband Metamaterial Absorbers
Advanced Optical Materials 7, 3(2019) 1-32
Yu P, Li Z, Wu T, Wang Y, Tong X, Li C, Wei S, Zhang Y, Liu H, Fu L, Wu J, Tan H, Jagadish C, Wang Z
Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission
Journal of Spectroscopy and Dynamics 13, 11(2019) 13492-13500
Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission
Journal of Spectroscopy and Dynamics 13, 11(2019) 13492-13500
Yuan X, Li L, Li Z, Wang F, Wang N, Fu L, He J, Tan H, Jagadish C
Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires
Nanoscale 11, 18(2019) 9207-9215
Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires
Nanoscale 11, 18(2019) 9207-9215
Zhang X, Huang H, Yao X, Li Z, Zhou C, Chen P, Fu L, Zhou X, Wang J, Hu W, Lu W, Zou J, Tan H, Jagadish C
Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire
ACS Nano 13, 3(2019) 3492-3499
Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire
ACS Nano 13, 3(2019) 3492-3499
Zhang X, Li Z, Yao X, Huang H, Wei D, Zhou C, Tang Z, Yuan X, Chen P, Hu W, Zou J, Lu W, Fu L
Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory
ACS Applied Electronic Materials 1, 9(2019) 1825-1831
Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory
ACS Applied Electronic Materials 1, 9(2019) 1825-1831
Seidl J, Gluschke J, Yuan X, Naureen S, Shahid N, Tan H, Jagadish C, Micolich A, Caroff-Gaonac'h P
Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy
Nano Letters 19, 7(2019) 4666-4677
Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy
Nano Letters 19, 7(2019) 4666-4677
Shi Y, Ren F, Xu W, Chen X, Ye J, Li L, Zhou D, Zhang R, Zheng Y, Tan H, Jagadish C, Lu H
Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices
Scientific Reports 9, 0(2019)
Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices
Scientific Reports 9, 0(2019)
Raj V, Lu T, Lockrey M, Liu R, Kremer F, Li L, Liu Y, Tan H, Jagadish C
Introduction of TiO2 in CuI for Its Improved Performance as a p-Type Transparent Conductor
ACS Applied Materials and Interfaces 11, 27(2019) 24254-24263
Introduction of TiO2 in CuI for Its Improved Performance as a p-Type Transparent Conductor
ACS Applied Materials and Interfaces 11, 27(2019) 24254-24263
Sautter J, Xu L, Miroshnichenko A, Lysevych M, Volkovskaya I, Smirnova D, Camacho Morales M, Zangeneh Kamali K, Karouta F, Vora K, Tan H, Kauranen M, Staude I, Jagadish C, Neshev D, Rahmani M
Tailoring Second-Harmonic Emission from (111)-GaAs Nanoantennas
Nano Letters 19, 6(2019) 3905-3911
Tailoring Second-Harmonic Emission from (111)-GaAs Nanoantennas
Nano Letters 19, 6(2019) 3905-3911
Haque A, Morshed M, Li Z, Li L, Vora K, Xu L, Fu L, Miroshnichenko A, Hattori H
Damage analysis of a perfect broadband absorber by a femtosecond laser
Scientific Reports 9, 15880(2019) 1-8
Damage analysis of a perfect broadband absorber by a femtosecond laser
Scientific Reports 9, 15880(2019) 1-8
Abbasian Shojaei I, Linser S, Jnawali G, Wickramasuriya N, Jackson H, Smith L, Kargar F, Balandin A, Yuan X, Caroff-Gaonac'h P, Tan H, Jagadish C
Strong Hot Carrier Effects in Single Nanowire Heterostructures
Nano Letters 19, 8(2019) 5062-5069
Strong Hot Carrier Effects in Single Nanowire Heterostructures
Nano Letters 19, 8(2019) 5062-5069
Alanis J, Chen Q, Lysevych M, Burgess T, Li L, Liu Z, Tan H, Jagadish C, Parkinson P
Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization
Nanoscale Advances 1, 11(2019) 4393-4397
Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization
Nanoscale Advances 1, 11(2019) 4393-4397
Alanis J, Lysevych M, Burgess T, Saxena D, Mokkapati S, Skalsky S, Tang X, Mitchell P, Walton A, Tan H, Jagadish C, Parkinson P
Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing
Nano Letters 19, 1(2019) 362-368
Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing
Nano Letters 19, 1(2019) 362-368
Butson J, Narangari P, Lysevych M, Wong-Leung J, Wan Y, Karuturi S, Tan H, Jagadish C
InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting
ACS Applied Materials and Interfaces 11, 28(2019) 25236-25242
InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting
ACS Applied Materials and Interfaces 11, 28(2019) 25236-25242
Camacho Morales M, Bautista G, Zang X, Xu L, Turquet L, Miroshnichenko A, Tan H, Lamprianidis A, Rahmani M, Jagadish C, Neshev D, Kauranen M
Resonant harmonic generation in AlGaAs nanoantennas probed by cylindrical vector beams
Nanoscale 11, 4(2019) 1745-1753
Resonant harmonic generation in AlGaAs nanoantennas probed by cylindrical vector beams
Nanoscale 11, 4(2019) 1745-1753
Chen B, Fu X, Lysevych M, Tan H, Jagadish C
Four-Dimensional Probing of Phase-Reaction Dynamics in Au/GaAs Nanowires
Nano Letters 19, 2(2019) 781-786
Four-Dimensional Probing of Phase-Reaction Dynamics in Au/GaAs Nanowires
Nano Letters 19, 2(2019) 781-786
Chen X, Chen Y, Ren F, Gu S, Tan H, Jagadish C, Ye J
Band alignment and band bending at a-Ga2O3/ZnO n-n isotype hetero-interface
Applied Physics Letters 115, 20(2019) 1-5
Band alignment and band bending at a-Ga2O3/ZnO n-n isotype hetero-interface
Applied Physics Letters 115, 20(2019) 1-5
Raj V, Vora K, Fu L, Tan H, Jagadish C
High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture
ACS Nano 13, 10(2019) 12015-12023
High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture
ACS Nano 13, 10(2019) 12015-12023
Fonseka H, Caroff-Gaonac'h P, Guo Y, Sanchez A, Tan H, Jagadish C
Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures
Nanoscale Research Letters 14(2019) 1-10
Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures
Nanoscale Research Letters 14(2019) 1-10
Gao H, Sun Q, Lysevych M, Tan H, Jagadish C, Zou J
Effect of Sn Addition on Epitaxial GaAs Nanowire Grown at Different Temperatures in Metal-Organic Chemical Vapor Deposition
Crystal Growth & Design 19, 9(2019) 5314-5319
Effect of Sn Addition on Epitaxial GaAs Nanowire Grown at Different Temperatures in Metal-Organic Chemical Vapor Deposition
Crystal Growth & Design 19, 9(2019) 5314-5319
Gao H, Sun Q, Sun W, Tan H, Jagadish C, Zou J
Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires
Nano Letters 19, 11(2019) 8262-8269
Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires
Nano Letters 19, 11(2019) 8262-8269
Gao H, Sun W, Sun Q, Tan H, Jagadish C, Zou J
Compositional Varied Core-Shell InGaP Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Nano Letters 19, 6(2019) 3782-3788
Compositional Varied Core-Shell InGaP Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Nano Letters 19, 6(2019) 3782-3788
Gao Q, Li Z, Li L, Vora K, Alabadla A, Wang F, Guo Y, Peng K, Wenas Y, Mokkapati S, Karouta F, Tan H, Jagadish C, Fu L
Axial p-n junction design and characterization for InP nanowire array solar cells
Progress in Photovoltaics: Research and Applications 27, 3(2019) 237-244
Axial p-n junction design and characterization for InP nanowire array solar cells
Progress in Photovoltaics: Research and Applications 27, 3(2019) 237-244
Haggrén T, Dunaevskiy M, Alekseev P, Geydt P, Lahderanta E, Lipsanen H
Determination of Young's Modulus of Wurtzite III-V Nanowires by the Methods of Scanning Probe Microscopy
Surface Investigation X-Ray, Synchrotron and Neutron Techniques 13, 1(2019) 53-55
Determination of Young's Modulus of Wurtzite III-V Nanowires by the Methods of Scanning Probe Microscopy
Surface Investigation X-Ray, Synchrotron and Neutron Techniques 13, 1(2019) 53-55
Chugh D, Jagadish C, Tan H
Large-Area Hexagonal Boron Nitride for Surface Enhanced Raman Spectroscopy
Advanced Materials Technologies 4, 8(2019) 1-7
Large-Area Hexagonal Boron Nitride for Surface Enhanced Raman Spectroscopy
Advanced Materials Technologies 4, 8(2019) 1-7
Haque A, Morshed M, Li Z, Vora K, Li L, Miroshnichenko A, Hattori H
Broadband and thermally stable tungsten boride absorber
Journal of the Optical Society of America B 36, 10(2019) 2744-2749
Broadband and thermally stable tungsten boride absorber
Journal of the Optical Society of America B 36, 10(2019) 2744-2749
Narangari P, Karuturi S, Wu Y, Wong-Leung J, Vora K, Lysevych M, Wan Y, Tan H, Jagadish C, Mokkapati S
Ultrathin Ta 2 O 5 electron-selective contacts for high efficiency InP solar cells
Nanoscale 11, 15(2019) 7497-7505
Ultrathin Ta 2 O 5 electron-selective contacts for high efficiency InP solar cells
Nanoscale 11, 15(2019) 7497-7505
Hattori H, As'ham K, Haque A, Li Z, Olbricht B
A Tale of Two Tantalum Borides as Potential Saturable Absorbers for Q-Switched Fiber Lasers
IEEE Photonics Journal 11, 3(2019) 1-12
A Tale of Two Tantalum Borides as Potential Saturable Absorbers for Q-Switched Fiber Lasers
IEEE Photonics Journal 11, 3(2019) 1-12
Raj V, Tan H, Jagadish C
Axial vs. Radial Junction Nanowire Solar Cells
Asian Journal of Physics 28, 7-9(2019) 719-746
Axial vs. Radial Junction Nanowire Solar Cells
Asian Journal of Physics 28, 7-9(2019) 719-746
Raj V, Jagadish C, Tan H
Axial vs radial junction nanowire solar cell
Asian Journal of Physics 28, 7 - 9(2019) 719-746
Axial vs radial junction nanowire solar cell
Asian Journal of Physics 28, 7 - 9(2019) 719-746
Raj V, Fu L, Tan H, Jagadish C
Design Principles for Fabrication of InP-Based Radial Junction Nanowire Solar Cells Using an Electron Selective Contact
IEEE Journal of Photovoltaics 9, 4(2019) 980-991
Design Principles for Fabrication of InP-Based Radial Junction Nanowire Solar Cells Using an Electron Selective Contact
IEEE Journal of Photovoltaics 9, 4(2019) 980-991
Patra N, Karuturi S, Vasa N, Nakamura D, Higashihata M, Singh V, Palani I
Influence of Ni, Ti and NiTi alloy nanoparticles on hydrothermally grown ZnO nanowires for photoluminescence enhancement
Journal of Alloys and Compounds 770(2019) 1119-1129
Influence of Ni, Ti and NiTi alloy nanoparticles on hydrothermally grown ZnO nanowires for photoluminescence enhancement
Journal of Alloys and Compounds 770(2019) 1119-1129
Pham H, Duong T, Rickard W, Kremer F, Weber K, Wong-Leung J
Understanding the Chemical and Structural Properties of Multiple-Cation Mixed Halide Perovskite
Journal of Physical Chemistry C 123, 43(2019) 26718-26726
Understanding the Chemical and Structural Properties of Multiple-Cation Mixed Halide Perovskite
Journal of Physical Chemistry C 123, 43(2019) 26718-26726
Morshed M, Li Z, Olbricht B, Fu L, Haque A, Li L, Aoni R, Rahmani M, Miroshnichenko A, Hattori H
High Fluence Chromium and Tungsten Bowtie Nano-antennas
Scientific Reports 9, 1(2019)
High Fluence Chromium and Tungsten Bowtie Nano-antennas
Scientific Reports 9, 1(2019)
Mirkhaydarov B, Votsi H, Sahu A, Caroff-Gaonac'h P, Young P, Stolojan V, King S, Ng C, Devabhaktuni V, Tan H, Jagadish C, Aaen P, Shkunov M
Solution-Processed InAs Nanowire Transistors as Microwave Switches
Advanced Electronic Materials 5, 1(2019) 1-8
Solution-Processed InAs Nanowire Transistors as Microwave Switches
Advanced Electronic Materials 5, 1(2019) 1-8
Ma T, Chen X, Kuang Y, Li L, Kremer F, Tan H, Jagadish C
On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire
Applied Physics Letters 115, 18(2019) 1-5
On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire
Applied Physics Letters 115, 18(2019) 1-5
Liu Z, Papadimitriou I, Castillo-Rodríguez M, Wang C, Esteban-Manzanares G, Yuan X, Tan H, Molina-Aldareguía J, Llorca J
Mechanical Behavior of InP Twinning Superlattice Nanowires
Nano Letters 19, 7(2019) 4490-4497
Mechanical Behavior of InP Twinning Superlattice Nanowires
Nano Letters 19, 7(2019) 4490-4497
Liu S, Switkowski K, Xu C, Tian J, Wang B, Lu P, Krolikowski W, Sheng Y
Nonlinear wavefront shaping with optically induced three-dimensional nonlinear photonic crystals
Nature Communications 10(2019)
Nonlinear wavefront shaping with optically induced three-dimensional nonlinear photonic crystals
Nature Communications 10(2019)
Kho T, Fong K, McIntosh K, Franklin E, Grant N, Stocks M, Phang S, Wan Y, Wang E, Zin N, Vora K, Blakers A
Exceptional silicon surface passivation by an ONO dielectric stack
Solar Energy Materials and Solar Cells 189(2019) 245-253
Exceptional silicon surface passivation by an ONO dielectric stack
Solar Energy Materials and Solar Cells 189(2019) 245-253
He J, Hossain M, Lin H, Wang W, Karuturi S, Hoex B, Ye J, Gao P, Bullock J, Wan Y
15% Efficiency Ultrathin Silicon Solar Cells with Fluorine-Doped Titanium Oxide and Chemically Tailored Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) as Asymmetric Heterocontact
ACS Nano 13, 6(2019) 6356-6362
15% Efficiency Ultrathin Silicon Solar Cells with Fluorine-Doped Titanium Oxide and Chemically Tailored Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) as Asymmetric Heterocontact
ACS Nano 13, 6(2019) 6356-6362
Yang H, Yang J, Ren X, Chen H, Jagadish C, Guo G, Jin C, Niu X
Three-leaf dart-shaped single-crystal BN formation promoted by surface oxygen
Applied Physics Letters 113, 16(2018) 5
Three-leaf dart-shaped single-crystal BN formation promoted by surface oxygen
Applied Physics Letters 113, 16(2018) 5
Tang K, Zhang Y, Shi Y, Cui J, Shu X, Wang Y, Liu J, Wang J, Tan H, Wu Y
Preparation of V2O5 dot-decorated WO3 nanorod arrays for high performance multi-color electrochromic devices
Journal of Materials Chemistry C: materials for optical and electronic devices 6, 45(2018) 12206-12216
Preparation of V2O5 dot-decorated WO3 nanorod arrays for high performance multi-color electrochromic devices
Journal of Materials Chemistry C: materials for optical and electronic devices 6, 45(2018) 12206-12216
Wan Y, Karuturi S, Samundsett C, Bullock J, Hettick M, Yan D, Peng J, Narangari P, Mokkapati S, Tan H, Jagadish C, Javey A, Cuevas A
Tantalum Oxide Electron-Selective Heterocontacts for Silicon Photovoltaics and Photoelectrochemical Water Reduction
Journal of Environmental Chemical Engineering 3, 1(2018) 125-131
Tantalum Oxide Electron-Selective Heterocontacts for Silicon Photovoltaics and Photoelectrochemical Water Reduction
Journal of Environmental Chemical Engineering 3, 1(2018) 125-131
Wei T, Mokkapati S, Li T, Lin C, Lin G, Jagadish C, He J
Nonlinear Absorption Applications of CH3NH3PbBr3 Perovskite Crystals
Advanced Functional Materials 28, 18(2018) 8
Nonlinear Absorption Applications of CH3NH3PbBr3 Perovskite Crystals
Advanced Functional Materials 28, 18(2018) 8
Xu T, Switkowski K, Chen X, Liu S, Koynov K, Yu H, Zhang H, Wang J, Sheng Y, Krolikowski W
Three-dimensional nonlinear photonic crystal in ferroelectric barium calcium titanate
Nature Photonics 12, 10(2018) 591-595
Three-dimensional nonlinear photonic crystal in ferroelectric barium calcium titanate
Nature Photonics 12, 10(2018) 591-595
Xu W, Ren F, Jevtics D, Hurtado A, Li L, Gao Q, Ye J, Wang F, Guilhabert B, Fu L, Lu H, Zhang R, Tan H, Dawson M, Jagadish C
Vertically Emitting Indium Phosphide Nanowire Lasers
Nano Letters 18, 6(2018) 3414-3420
Vertically Emitting Indium Phosphide Nanowire Lasers
Nano Letters 18, 6(2018) 3414-3420
Yan S, Zhou H, Xing B, Zhang S, Li L, Qin Q
Crystal plasticity in fusion zone of a hybrid laser welded Al alloys joint: From nanoscale to macroscale
Materials and Design 160(2018) 313-324
Crystal plasticity in fusion zone of a hybrid laser welded Al alloys joint: From nanoscale to macroscale
Materials and Design 160(2018) 313-324
Shen H, Duong T, Peng J, Jacobs D, Wu N, Gong J, Wu Y, Karuturi S, Fu X, Weber K, Xiao X, White T, Catchpole K
Mechanically-stacked perovskite/CIGS tandem solar cells with efficiency of 23.9% and reduced oxygen sensitivity
Energy and Environmental Science 2, 2018(2018) 394-406
Mechanically-stacked perovskite/CIGS tandem solar cells with efficiency of 23.9% and reduced oxygen sensitivity
Energy and Environmental Science 2, 2018(2018) 394-406
Yang I, Zhang X, Zheng C, Gao Q, Li Z, Li L, Lockrey M, Nguyen H, Caroff-Gaonac'h P, Etheridge J, Tan H, Jagadish C, Wong-Leung J, Fu L
Radial Growth Evolution of InGaAs/InP Multi Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy
ACS Nano 12, 10(2018) 10374-10382
Radial Growth Evolution of InGaAs/InP Multi Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy
ACS Nano 12, 10(2018) 10374-10382
Yu P, Zhang F, Li Z, Zhong Z, Govorov A, Fu L, Tan H, Jagadish C, Wang Z
Giant optical pathlength enhancement in plasmonic thin film solar cells using core-shell nanoparticles
Journal of Physics D: Applied Physics 51, 29(2018) 8
Giant optical pathlength enhancement in plasmonic thin film solar cells using core-shell nanoparticles
Journal of Physics D: Applied Physics 51, 29(2018) 8
Yuan X, Yang J, He J, Tan H, Jagadish C
Role of surface energy in nanowire growth
Journal of Physics D: Applied Physics 51, 28(2018) 15
Role of surface energy in nanowire growth
Journal of Physics D: Applied Physics 51, 28(2018) 15
Zhao B, Lockrey M, Caroff-Gaonac'h P, Wang N, Li L, Wong-Leung J, Tan H, Jagadish C
The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods
Nanoscale 10, 23(2018) 11205-11210
The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods
Nanoscale 10, 23(2018) 11205-11210
Zhou W, Roelkens G, Yoo S, Gerhold M, Fu L, Hu J
Introduction to the Special Issue on Emerging Areas in Integrated Photonics
IEEE Journal of Selected Topics in Applied Earth Observations and Remote Sensing 24, 6(2018) 1-3
Introduction to the Special Issue on Emerging Areas in Integrated Photonics
IEEE Journal of Selected Topics in Applied Earth Observations and Remote Sensing 24, 6(2018) 1-3
Zhu Y, Li Z, Zhang L, Wang B, Luo Z, Long J, Yang J, Fu L, Lu Y
High-Efficiency Monolayer Molybdenum Ditelluride Light-Emitting Diode and Photodetector
ACS Applied Materials and Interfaces 10, 50(2018) 43291-43298
High-Efficiency Monolayer Molybdenum Ditelluride Light-Emitting Diode and Photodetector
ACS Applied Materials and Interfaces 10, 50(2018) 43291-43298
Tan H
Preparation of V2 O5 dot-decorated WO3 nanorod arrays for high performance multi-color electrochromic devices
Journal of Materials Chemistry C 6, 45(2018) 12206-12216
Preparation of V
Journal of Materials Chemistry C 6, 45(2018) 12206-12216
Sun Z, Burgess T, Tan H, Jagadish C, Kogan A
Temperature effects in contacts between a metal and a semiconductor nanowire near the degenerate doping
Nanotechnology 29, 16(2018) 13
Temperature effects in contacts between a metal and a semiconductor nanowire near the degenerate doping
Nanotechnology 29, 16(2018) 13
Zhang L, Sharma A, Zhu Y, Zhang Y, Wang B, Dong M, Nguyen H, Wang Z, Wen B, Cao Y, Liu B, SUN X, Yang J, Li Z, Kar A, Shi Y, MacDonald D, Yu Z, Wang X, Lu Y
Efficient and Layer-Dependent Exciton Pumping across Atomically Thin Organic?Inorganic Type-I Heterostructures
Advanced Materials 30, 40(2018) 1-8
Efficient and Layer-Dependent Exciton Pumping across Atomically Thin Organic?Inorganic Type-I Heterostructures
Advanced Materials 30, 40(2018) 1-8
Sadi T, Kivisaari P, Tiira J, Radevici I, Haggrén T, Oksanen J
Electroluminescent cooling in intracavity light emitters: modeling and experiments
Optical and Quantum Electronics 50, 1(2018) 1-8
Electroluminescent cooling in intracavity light emitters: modeling and experiments
Optical and Quantum Electronics 50, 1(2018) 1-8
Chugh D, Wong-Leung J, Li L, Lysevych M, Tan H, Jagadish C
Flow modulation epitaxy of hexagonal boron nitride
2D Materials 5, 4(2018) 1-10
Flow modulation epitaxy of hexagonal boron nitride
2D Materials 5, 4(2018) 1-10
Li Z, Tan H, Jagadish C, Fu L
III-V Semiconductor Single Nanowire Solar Cells: A Review
Advanced Materials Technologies 3, 9(2018) 12
III-V Semiconductor Single Nanowire Solar Cells: A Review
Advanced Materials Technologies 3, 9(2018) 12
Li J, Chen X, Ma T, Ren F, Gu S, Zhang R, Zheng Y, Ringer S, Fu L, Tan H, Jagadish C, Ye J, Cui X
Identification and modulation of electronic band structures of single-phase ?-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy
Applied Physics Letters 113, 4(2018) 1-6
Identification and modulation of electronic band structures of single-phase ?-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy
Applied Physics Letters 113, 4(2018) 1-6
Li F, Xie X, Gao Q, Tan L, Zhou Y, Yang Q, Ma J, Fu L, Jagadish C, Tan H
Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires
Nanotechnology 29, 22(2018) 1-10
Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires
Nanotechnology 29, 22(2018) 1-10
Karuturi S, Yew R, Narangari P, Wong-Leung J, Li L, Vora K, Tan H, Jagadish C
CdS/TiO2 photoanodes via solution ion transfer method for highly efficient solar hydrogen generation
Nano Futures 2, 1(2018) 8
CdS/TiO2 photoanodes via solution ion transfer method for highly efficient solar hydrogen generation
Nano Futures 2, 1(2018) 8
Raj V, Santos T, Rougieux F, Vora K, Lysevych M, Fu L, Mokkapati S, Tan H, Jagadish C
Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer
Journal of Physics D: Applied Physics 51, 39(2018) 1-9
Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer
Journal of Physics D: Applied Physics 51, 39(2018) 1-9
Karuturi S, Shen H, Duong T, Narangari P, Yew R, Wong-Leung J, Catchpole K, Tan H, Jagadish C
Perovskite Photovoltaic Integrated CdS/TiO2 Photoanode for Unbiased Photoelectrochemical Hydrogen Generation
ACS Applied Materials and Interfaces 10, 28(2018) 23766-23773
Perovskite Photovoltaic Integrated CdS/TiO2 Photoanode for Unbiased Photoelectrochemical Hydrogen Generation
ACS Applied Materials and Interfaces 10, 28(2018) 23766-23773
Hurtado A, Jevtics D, Guilhabert B, Gao Q, Tan H, Jagadish C, Dawson M
Transfer printing of semiconductor nanowire lasers
I E T Optoelectronics 12, 1(2018) 30-35
Transfer printing of semiconductor nanowire lasers
I E T Optoelectronics 12, 1(2018) 30-35
Herring A, Gilby F, Li Z, McClure J, Turner M, Veldkamp J, Beeching L, Sheppard A
Observations of nonwetting phase snap-off during drainage
Advances in Water Resources 121(2018) 32-43
Observations of nonwetting phase snap-off during drainage
Advances in Water Resources 121(2018) 32-43
Hattori H, Haque A, Olbricht B, Li Z
Zirconium Boride as a High Fluence Saturable Absorber for Q-Switched Fiber Lasers
IEEE Photonics Technology Letters 30, 1(2018) 11-14
Zirconium Boride as a High Fluence Saturable Absorber for Q-Switched Fiber Lasers
IEEE Photonics Technology Letters 30, 1(2018) 11-14
Hattori H, Haque A, Olbricht B, Li Z
Zirconium Boride as a High Fluence Saturable Absorber for Q-Switched Fiber Lasers
IEEE Photonics Technology Letters 30, 1(2018) 11-14
Zirconium Boride as a High Fluence Saturable Absorber for Q-Switched Fiber Lasers
IEEE Photonics Technology Letters 30, 1(2018) 11-14
Haggrén T, Khayrudinov V, Dhaka V, Jiang H, Shah A, Kim M, Lipsanen H
III-V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs
Scientific Reports 8, 1(2018) 1-9
III-V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs
Scientific Reports 8, 1(2018) 1-9
Ghediya P, Chaudhuri T, Raj V, Chugh D, Vora K, Li L, Tan H, Jagadish C
Direct-coated Cu2SnS3 films from molecular solution inks for solar photovoltaics
Materials Science in Semiconductor Processing 88(2018) 120-126
Direct-coated Cu2SnS3 films from molecular solution inks for solar photovoltaics
Materials Science in Semiconductor Processing 88(2018) 120-126
Gao H, Lysevych M, Tan H, Jagadish C, Zou J
The effect of Sn addition on GaAs nanowire grown by vapor-liquid-solid growth mechanism
Nanotechnology 29, 46(2018) 1-8
The effect of Sn addition on GaAs nanowire grown by vapor-liquid-solid growth mechanism
Nanotechnology 29, 46(2018) 1-8
Fan M, McClure J, Han Y, Li Z, Chen C
Interaction Between Proppant Compaction and Single-/Multiphase Flows in a Hydraulic Fracture
SPE Journal 23, 4(2018) 1290-1303
Interaction Between Proppant Compaction and Single-/Multiphase Flows in a Hydraulic Fracture
SPE Journal 23, 4(2018) 1290-1303
Li Z, Yang I, Li L, Gao Q, Chong J, Lockrey M, Tan H, Jagadish C, Fu L
Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance
Progress in Natural Science: Materials International 28, 2(2018) 178-182
Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance
Progress in Natural Science: Materials International 28, 2(2018) 178-182
Nguyen H, Liu A, Yan D, Guthrey H, Truong T, Tebyetekerwa M, Li Z, Al-Jassim M, Cuevas A, MacDonald D
Sub-Bandgap Luminescence from Doped Polycrystalline and Amorphous Silicon Films and Its Application to Understanding Passivating-Contact Solar Cells
ACS Applied Energy Materials 1, 11(2018) 6619-6625
Sub-Bandgap Luminescence from Doped Polycrystalline and Amorphous Silicon Films and Its Application to Understanding Passivating-Contact Solar Cells
ACS Applied Energy Materials 1, 11(2018) 6619-6625
Liu S, Switkowski K, Chen X, Xu T, Krolikowski W, Sheng Y
Broadband enhancement of Cerenkov second harmonic generation in a sunflower spiral nonlinear photonic crystal
Optics Express 26, 7(2018) 8628-8633
Broadband enhancement of Cerenkov second harmonic generation in a sunflower spiral nonlinear photonic crystal
Optics Express 26, 7(2018) 8628-8633
Pickering E, Bo A, Zhan H, Liao X, Tan H, Gu Y
In situ mechanical resonance behaviour of pristine and defective zinc blende GaAs nanowires
Nanoscale 10, 5(2018) 2588-2595
In situ mechanical resonance behaviour of pristine and defective zinc blende GaAs nanowires
Nanoscale 10, 5(2018) 2588-2595
Peng K, Parkinson P, Fu L, Gao Q, Boland J, Guo Y, Jiang N, Tan H, Johnston M, Jagadish C
Distinguishing cap and core contributions to the photoconductive terahertz response of single GaAs based core–shell–cap nanowire detectors
Lithuanian Journal of Physics 58, 1(2018) 15-23
Distinguishing cap and core contributions to the photoconductive terahertz response of single GaAs based core–shell–cap nanowire detectors
Lithuanian Journal of Physics 58, 1(2018) 15-23
Parkinson P, Alanis J, Peng K, Saxena D, Mokkapati S, Jiang N, Fu L, Tan H, Jagadish C
Modal refractive index measurement in nanowire lasers - a correlative approach
Nano Futures 2, 035004(2018)
Modal refractive index measurement in nanowire lasers - a correlative approach
Nano Futures 2, 035004(2018)
Nie K, Tu X, Li J, Chen X, Ren F, Zhang G, Kang L, Gu S, Zhang R, Wu P, Zheng Y, Tan H, Jagadish C, Ye J
Tailored Emission Properties of ZnTe/ZnTe:O/ZnO Core-Shell Nanowires Coupled with an Al Plasmonic Bowtie Antenna Array
ACS Nano 12, 7(2018) 7327-7334
Tailored Emission Properties of ZnTe/ZnTe:O/ZnO Core-Shell Nanowires Coupled with an Al Plasmonic Bowtie Antenna Array
ACS Nano 12, 7(2018) 7327-7334
Mai H, Lu T, Li Q, Sun Q, Vu K, Chen H, Wang G, Humphrey M, Kremer F, Li L, Withers R, Liu Y
Photovoltaic Effect of a Ferroelectric-Luminescent Heterostructure under Infrared Light Illumination
ACS Applied Materials and Interfaces 10, 35(2018) 29786-29794
Photovoltaic Effect of a Ferroelectric-Luminescent Heterostructure under Infrared Light Illumination
ACS Applied Materials and Interfaces 10, 35(2018) 29786-29794
Mai H, Lu T, Li Q, Liu Z, Li Y, Kremer F, Li L, Withers R, Wen H, Liu Y
Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains
ACS Applied Materials and Interfaces 10, 15(2018) 12781-12789
Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains
ACS Applied Materials and Interfaces 10, 15(2018) 12781-12789
Liu J, Li J, Dai M, Hu Y, Cui J, Wang Y, Tan H, Wu Y
Photo-assisted synthesis of coaxial-structured polypyrrole/electrochemically hydrogenated TiO2 nanotube arrays as a high performance supercapacitor electrode
RSC Advances 8, 24(2018) 13393-13400
Photo-assisted synthesis of coaxial-structured polypyrrole/electrochemically hydrogenated TiO2 nanotube arrays as a high performance supercapacitor electrode
RSC Advances 8, 24(2018) 13393-13400
Butson J, Narangari P, Karuturi S, Yew R, Lysevych M, Tan H, Jagadish C
Photoelectrochemical studies of InGaN/GaN MQW photoanodes
Nanotechnology 29, 4(2018) 8
Photoelectrochemical studies of InGaN/GaN MQW photoanodes
Nanotechnology 29, 4(2018) 8
Liu J, Dai M, Wu J, Hu Y, Zhang Q, Cui J, Wang Y, Tan H, Wu Y
Electrochemical hydrogenation of mixed-phase TiO2 nanotube arrays enables remarkably enhanced photoelectrochemical water splitting performance
Science Bulletin 63, 3(2018) 194-202
Electrochemical hydrogenation of mixed-phase TiO2 nanotube arrays enables remarkably enhanced photoelectrochemical water splitting performance
Science Bulletin 63, 3(2018) 194-202
Liu G, Karuturi S, Chen H, Spiccia L, Tan H, Jagadish C, Wang D, Simonov A, Tricoli A
Tuning the morphology and structure of disordered hematite photoanodes for improved water oxidation: A physical and chemical synergistic approach
Nano Energy 53(2018) 745-752
Tuning the morphology and structure of disordered hematite photoanodes for improved water oxidation: A physical and chemical synergistic approach
Nano Energy 53(2018) 745-752
Liu A, Yan D, Wong-Leung J, Li L, Phang S, Cuevas A, MacDonald D
Direct observation of the impurity gettering layers in polysilicon-based passivating contacts for silicon solar cells
ACS Applied Energy Materials 1(2018) 2275-2282
Direct observation of the impurity gettering layers in polysilicon-based passivating contacts for silicon solar cells
ACS Applied Energy Materials 1(2018) 2275-2282
Rahmani M, Leo G, Brener I, Zayats A, Maier S, De Angelis C, Tan H, Gili V, Karouta F, Oulton R, Vora K, Lysevych M, Staude I, Xu L, Miroshnichenko A, Jagadish C, Neshev D
Nonlinear frequency conversion in optical nanoantennas and metasurfaces: materials evolution and fabrication
Opto-Electronic Advances 1, 10(2018) 1-12
Nonlinear frequency conversion in optical nanoantennas and metasurfaces: materials evolution and fabrication
Opto-Electronic Advances 1, 10(2018) 1-12
Yuan X, Guo Y, Caroff-Gaonac'h P, He J, Tan H, Jagadish C
Dopant-Free Twinning Superlattice Formation in InSb and InP Nanowires
Physica Status Solidi: Rapid Research Letters 11, 11(2017) 6
Dopant-Free Twinning Superlattice Formation in InSb and InP Nanowires
Physica Status Solidi: Rapid Research Letters 11, 11(2017) 6
Yew R, Karuturi S, Tan H, Jagadish C
Nanostructured Photoelectrodes via Template-Assisted Fabrication
Semiconductors and Semimetals 97(2017) 289-313
Nanostructured Photoelectrodes via Template-Assisted Fabrication
Semiconductors and Semimetals 97(2017) 289-313
Xu W, Shi Y, Ye J, Ren F, Shadrivov I, Lu H, Liang L, Hu X, Jin B, Zhang R, Zheng Y, Tan H, Jagadish C
A Terahertz Controlled-NOT Gate Based on Asymmetric Rotation of Polarization in Chiral Metamaterials
Advanced Optical Materials 5, 18(2017) 1700108 7
A Terahertz Controlled-NOT Gate Based on Asymmetric Rotation of Polarization in Chiral Metamaterials
Advanced Optical Materials 5, 18(2017) 1700108 7
Ullah A, Joyce H, Tan H, Jagadish C, Micolich A
The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors
Nanotechnology 28, 45(2017) 454001 8
The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors
Nanotechnology 28, 45(2017) 454001 8
Shen H, Jacobs D, Wu Y, Duong T, Peng J, Wen X, Fu X, Karuturi S, White T, Weber K, Catchpole K
Inverted Hysteresis in CH3NH3PbI3 Solar Cells: Role of Stoichiometry and Band Alignment
Journal of Physical Chemistry Letters 8, 12(2017) 2672-2680
Inverted Hysteresis in CH3NH3PbI3 Solar Cells: Role of Stoichiometry and Band Alignment
Journal of Physical Chemistry Letters 8, 12(2017) 2672-2680
Alexander-Webber J, Groschner C, Sagade A, Tainter G, Gonzalez-Zalba M, Di Pietro R, Wong-Leung J, Tan H, Jagadish C, Hofmann S, Joyce H
Engineering the Photoresponse of InAs Nanowires
ACS Applied Materials and Interfaces 9, 50(2017) 43993-44000
Engineering the Photoresponse of InAs Nanowires
ACS Applied Materials and Interfaces 9, 50(2017) 43993-44000
Yuan X, Saxena D, Caroff-Gaonac'h P, Wang F, Lockrey M, Mokkapati S, Tan H, Jagadish C
Strong Amplified Spontaneous Emission from High Quality GaAs1-xSbx Single Quantum Well Nanowires
Journal of Physical Chemistry C 121, 15(2017) 8636-8644
Strong Amplified Spontaneous Emission from High Quality GaAs1-xSbx Single Quantum Well Nanowires
Journal of Physical Chemistry C 121, 15(2017) 8636-8644
Rota M, Ameruddin A, Wong-Leung J, Belabbes A, Gao Q, Miriametro A, Mura F, Tan H, Polimeni A, Bechstedt F, Jagadish C, Capizzi M
Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires
Journal of Physical Chemistry C 121, 30(2017) 16650-16656
Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires
Journal of Physical Chemistry C 121, 30(2017) 16650-16656
Alanis J, Saxena D, Mokkapati S, Jiang N, Peng K, Tang X, Fu L, Tan H, Jagadish C, Parkinson P
Large-scale statistics for threshold optimization of optically pumped nanowire lasers
Nano Letters 17, 8(2017) 4860-4865
Large-scale statistics for threshold optimization of optically pumped nanowire lasers
Nano Letters 17, 8(2017) 4860-4865
Yuan X, Saxena D, Caroff-Gaonac'h P, Wang F, Lockrey M, Mokkapati S, Tan H, Jagadish C
Strong Amplified Spontaneous Emission from High Quality GaAs1-xSbx Single Quantum Well Nanowires
Journal of Physical Chemistry C 121, 15(2017) 8636-8644
Strong Amplified Spontaneous Emission from High Quality GaAs1-xSbx Single Quantum Well Nanowires
Journal of Physical Chemistry C 121, 15(2017) 8636-8644
Alkhaldi H, Kluth P, Kremer F, Lysevych M, Li L, Ridgway M, Williams J
Void evolution and porosity under arsenic ion irradiation in GaAs1-xSbx alloys
Journal of Physics D: Applied Physics 50, 12(2017) 125101-125108
Void evolution and porosity under arsenic ion irradiation in GaAs1-xSbx alloys
Journal of Physics D: Applied Physics 50, 12(2017) 125101-125108
Schifano R, Riise H, Domaga?a J, Azarov A, Ratajczak R, Monakhov E, Venkatachalapathy V, Vines L, Chan K, Wong-Leung J, Svensson B
Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering
Journal of Applied Physics 121, 1(2017) 8
Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering
Journal of Applied Physics 121, 1(2017) 8
Wong-Leung J, Patel J, Reenen S, Sakai N, Wang J, Parrot E, Liu M, Snaith H, Herz L, Johnston M
Influence of Interface Morphology on Hysteresis in Vapor-Deposited Perovskite Solar Cells
Advanced Electronic Materials 3, 2(2017) 1-6
Influence of Interface Morphology on Hysteresis in Vapor-Deposited Perovskite Solar Cells
Advanced Electronic Materials 3, 2(2017) 1-6
Qu J, Du S, Burgess T, Wang C, Cui X, Gao Q, Wang W, Tan H, Liu H, Jagadish C, Zhang Y, Chen H, Khan M, Ringer S, Zheng R
3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Advanced Materials 29, 31(2017) 1-8
3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Advanced Materials 29, 31(2017) 1-8
Haggrén T
I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide
Applied Physics Letters 111, 13(2017)
I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide
Applied Physics Letters 111, 13(2017)
Baig S, Boland J, Damry D, Tan H, Jagadish C, Joyce H, Johnston M
An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires
Nano Letters 17, 4(2017) 2603-2610
An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires
Nano Letters 17, 4(2017) 2603-2610
Baig S, Boland J, Damry D, Tan H, Jagadish C, Johnston M, Joyce H
Choice of Polymer Matrix for a Fast Switchable III-V Nanowire Terahertz Modulator
MRS Advances 2, 28(2017) 1475-1480
Choice of Polymer Matrix for a Fast Switchable III-V Nanowire Terahertz Modulator
MRS Advances 2, 28(2017) 1475-1480
Berg A, Caroff-Gaonac'h P, Shahid N, Lockrey M, Yuan X, Borgström M, Tan H, Jagadish C
Growth and optical properties of InxGa1-xP nanowires synthesized by selective-area epitaxy
Nano Research 10, 2(2017) 672-682
Growth and optical properties of InxGa1-xP nanowires synthesized by selective-area epitaxy
Nano Research 10, 2(2017) 672-682
Bo R, Nasiri-Varg N, Chen H, Caputo D, Fu L, Tricoli A
Low-Voltage High-Performance UV Photodetectors: An Interplay between Grain Boundaries and Debye Length
ACS Applied Materials and Interfaces 9, 3(2017) 2606-2615
Low-Voltage High-Performance UV Photodetectors: An Interplay between Grain Boundaries and Debye Length
ACS Applied Materials and Interfaces 9, 3(2017) 2606-2615
Carrad D, Mostert A, Ullah A, Burke A, Joyce H, Tan H, Jagadish C, Krogstrup P, Nygård J, Meredith P, Micolich A
Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry
Nano Letters 17, 2(2017) 827-833
Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry
Nano Letters 17, 2(2017) 827-833
Chen B, Fu X, Tang J, Lysevych M, Tan H, Jagadish C, Zewail A
Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy
PNAS - Proceedings of the National Academy of Sciences of the United States of America 114, 49(2017) 12876-12881
Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy
PNAS - Proceedings of the National Academy of Sciences of the United States of America 114, 49(2017) 12876-12881
Fonseka H, Ameruddin A, Caroff-Gaonac'h P, Tedeschi D, De Luca M, Mura F, Guo Y, Lysevych M, Wang F, Tan H, Polimeni A, Jagadish C
InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 µm wavelength range
Nanoscale 9, 36(2017) 13554-13562
InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 µm wavelength range
Nanoscale 9, 36(2017) 13554-13562
Gao Q, Tan H, Jagadish C, Wagner H, Kaveh M, Langbein W
Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires
Physical Review B 95, 4(2017)
Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires
Physical Review B 95, 4(2017)
Qu J, Du S, Burgess T, Wang C, Cui X, Gao Q, Wang W, Tan H, Liu H, Jagadish C, Zhang Y, Chen H, Khan M, Ringer S, Zheng R
3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Advanced Materials 29, 31(2017) 1-8
3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Advanced Materials 29, 31(2017) 1-8
Gareso P, Tan H, Jagadish C
Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs quantum well laser structures
ECS Journal of Solid State Science and Technology 6, 8(2017) 122-126
Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs quantum well laser structures
ECS Journal of Solid State Science and Technology 6, 8(2017) 122-126
Gautam V, Naureen S, Shahid N, Gao Q, Wang Y, Nisbet D, Jagadish C, Daria V
Engineering Highly Interconnected Neuronal Networks on Nanowire Scaffolds
Nano Letters 17, 6(2017) 3369-3375
Engineering Highly Interconnected Neuronal Networks on Nanowire Scaffolds
Nano Letters 17, 6(2017) 3369-3375
Gareso P, Buda M, Tan H, Jagadish C
The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes
Indian Journal of Pure & Applied Physics 55, 5(2017) 333-338
The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes
Indian Journal of Pure & Applied Physics 55, 5(2017) 333-338
Haggrén T, Shah A, Autere A, Kakko J, Dhaka V, Kim M, Huhtio T, Sun Z, Lipsanen H
Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties
Nano Research 10, 8(2017) 2657-2666
Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties
Nano Research 10, 8(2017) 2657-2666
Joyce H, Baig S, Parkinson P, Davies C, Boland J, Tan H, Jagadish C, Herz L, Johnston M
The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires
Journal of Physics D: Applied Physics 50, 22(2017)
The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires
Journal of Physics D: Applied Physics 50, 22(2017)
Khaleque A, Mironov E, Osorio J, Li Z, Cordeiro C, Liu L, Franco M, Liow J, Hattori H
Integration of bow-tie plasmonic nanoantennas on tapered fibers
Optics Express 25, 8(2017) 8986-8996
Integration of bow-tie plasmonic nanoantennas on tapered fibers
Optics Express 25, 8(2017) 8986-8996
Kruk S, Camacho Morales M, Xu L, Rahmani M, Smirnova D, Wang L, Tan H, Jagadish C, Neshev D, Kivshar Y
Nonlinear Optical Magnetism Revealed by Second-Harmonic Generation in Nanoantennas
Nano Letters 17, 6(2017) 3914-3918
Nonlinear Optical Magnetism Revealed by Second-Harmonic Generation in Nanoantennas
Nano Letters 17, 6(2017) 3914-3918
Li F, Li Z, Tan L, Zhou Y, Ma J, Lysevych M, Fu L, Tan H, Jagadish C
Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors
Nanotechnology 28, 12(2017) 9
Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors
Nanotechnology 28, 12(2017) 9
Liu J, Xu J, Wang Y, Cui J, Tan H, Wu Y
Electrochemical hydrogenated TiO2 nanotube arrays decorated with 3D cotton-like porous MnO2 enables superior supercapacitive performance
RSC Advances 7, 50(2017) 31512-31518
Electrochemical hydrogenated TiO2 nanotube arrays decorated with 3D cotton-like porous MnO2 enables superior supercapacitive performance
RSC Advances 7, 50(2017) 31512-31518
Narangari P, Karuturi S, Lysevych M, Tan H, Jagadish C
Improved photoelectrochemical performance of GaN nanopillar photoanodes
Nanotechnology 28, 15(2017)
Improved photoelectrochemical performance of GaN nanopillar photoanodes
Nanotechnology 28, 15(2017)
Nasiri-Varg N, Bo R, Fu L, Tricoli A
Three-dimensional nano-heterojunction networks: A highly performing structure for fast visible-blind UV photodetectors
Nanoscale 9, 5(2017) 2059-2067
Three-dimensional nano-heterojunction networks: A highly performing structure for fast visible-blind UV photodetectors
Nanoscale 9, 5(2017) 2059-2067
Nie K, Li J, Chen X, Xu Y, Tu X, Ren F, Du Q, Fu L, Kang L, Tang K, Gu S, Zhang R, Wu P, Zheng Y, Tan H, Jagadish C, Ye J
Extreme absorption enhancement in ZnTe:O/ZnO intermediate band core-shell nanowires by interplay of dielectric resonance and plasmonic bowtie nanoantennas
Scientific Reports 7, 1(2017) 7503-7503
Extreme absorption enhancement in ZnTe:O/ZnO intermediate band core-shell nanowires by interplay of dielectric resonance and plasmonic bowtie nanoantennas
Scientific Reports 7, 1(2017) 7503-7503
Jevtics D, Hurtado A, Guilhabert B, McPhillimy J, Cantarella G, Gao Q, Tan H, Jagadish C, Strain M, Dawson M
Integration of Semiconductor Nanowire Lasers with Polymeric Waveguide Devices on a Mechanically Flexible Substrate
Nano Letters 17, 10(2017) 5990-5994
Integration of Semiconductor Nanowire Lasers with Polymeric Waveguide Devices on a Mechanically Flexible Substrate
Nano Letters 17, 10(2017) 5990-5994
Pei J, Yang J, Wang X, Wang F, Mokkapati S, Lu T, Zheng J, Qin Q, Neshev D, Tan H, Jagadish C, Lu Y
Excited State Biexcitons in Atomically Thin MoSe2
ACS Nano 11, 7(2017) 7468-7475
Excited State Biexcitons in Atomically Thin MoSe2
ACS Nano 11, 7(2017) 7468-7475
Peng K, Parkinson P, Gao Q, Boland J, Li Z, Wang F, Mokkapati S, Fu L, Johnston M, Tan H, Jagadish C
Single n+-i-n+ InP Nanowires for Highly Sensitive Terahertz Detection
Nanotechnology 28, 12(2017) 9
Single n+-i-n+ InP Nanowires for Highly Sensitive Terahertz Detection
Nanotechnology 28, 12(2017) 9
Xu W, Ren F, Ye J, Lu H, Liang L, Huang X, Liu M, Shadrivov I, Powell D, Yu G, Jin B, Zhang R, Zheng Y, Tan H, Jagadish C
Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays
Scientific Reports 6(2016)
Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays
Scientific Reports 6(2016)
Tran P, Alkhaldi H, Gandhi H, Pastor D, Huston L, Wong-Leung J, Aziz M, Williams J
Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer
Applied Physics Letters 109, 8(2016)
Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer
Applied Physics Letters 109, 8(2016)
Wang S, Yin Y, Gu H, Wang N, Liu L
Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes
Journal of Display Technology 12, 10(2016) 1112-1116
Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes
Journal of Display Technology 12, 10(2016) 1112-1116
Xu R, Zhang S, Wang F, Yang J, Wang Z, Pei J, Win Myint Y, Xing B, Yu Z, Fu L, Qin Q, Lu Y
Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors
ACS Nano 10, 2(2016) 2046-2053
Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors
ACS Nano 10, 2(2016) 2046-2053
Zhong Z, Li Z, Gao Q, Peng K, Li L, Mokkapati S, Vora K, Wu J, Zhang G, Wang Z, Fu L, Tan H, Jagadish C
Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating
Nano Energy 28, -(2016) 106-114
Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating
Nano Energy 28, -(2016) 106-114
Yang J, Wang Z, Wang F, Xu R, Tao J, Zhang S, Qin Q, Luther-Davies B, Jagadish C, Yu Z, Lu Y
Atomically thin optical lenses and gratings
Light: Science & Applications 5(2016)
Atomically thin optical lenses and gratings
Light: Science & Applications 5(2016)
Ye J, Gu S, Tan H, Jagadish C, Xian F
Structural transition, subgap states, and carrier transport in anion-engineered zinc oxynitride nanocrystalline films
Applied Physics Letters 109, 2(2016) 1-5
Structural transition, subgap states, and carrier transport in anion-engineered zinc oxynitride nanocrystalline films
Applied Physics Letters 109, 2(2016) 1-5
Zhang G, Guo X, Ren F, Li Y, Liu B, Ye J, Ge H, Xie Z, Zhang R, Tan H, Jagadish C
High-Brightness Polarized Green InGaN/GaN Light-Emitting Diode Structure with Al-Coated p-GaN Grating
ACS Photonics 3, 10(2016) 1912-1918
High-Brightness Polarized Green InGaN/GaN Light-Emitting Diode Structure with Al-Coated p-GaN Grating
ACS Photonics 3, 10(2016) 1912-1918
Zhang G, Li Z, Yuan X, Wang F, Fu L, Zhuang Z, Ren F, Liu B, Zhang R, Tan H, Jagadish C
Single nanowire green InGaN/GaN light emitting diodes
Nanotechnology 27, 43(2016) 1-7
Single nanowire green InGaN/GaN light emitting diodes
Nanotechnology 27, 43(2016) 1-7
Tedeschi D, De Luca M, Fonseka H, Gao Q, Mura F, Tan H, Rubini S, Martelli F, Jagadish C, Capizzi M, Polimeni A
Long-Lived Hot Carriers in III-V Nanowires
Nano Letters 16, 5(2016) 3085-3093
Long-Lived Hot Carriers in III-V Nanowires
Nano Letters 16, 5(2016) 3085-3093
Toe W, Ortega-Piwonka I, Angstmann C, Gao Q, Tan H, Jagadish C, Henry B, Reece P
Nonconservative dynamics of optically trapped high-aspect-ratio nanowires
Physical Review E 93, 2(2016) 1-7
Nonconservative dynamics of optically trapped high-aspect-ratio nanowires
Physical Review E 93, 2(2016) 1-7
Soo M, Zheng K, Gao Q, Tan H, Jagadish C, Zou J
Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks
Nano Letters 16, 7(2016) 4189-4193
Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks
Nano Letters 16, 7(2016) 4189-4193
Tedeschi D, De Luca M, del Águila A, Gao Q, Ambrosio G, Capizzi M, Tan H, Christianen P, Jagadish C, Polimeni A
Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires
Nano Letters 16, 10(2016) 6213-6221
Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires
Nano Letters 16, 10(2016) 6213-6221
Geydt P, Haggrén T, Alekseev P, Dunaevskiy M, Kakko J, Lähderanta E, Lipsanen H
Influence of surface passivation on electric properties of individual GaAs nanowires studied by current-voltage AFM measurements
Lithuanian Journal of Physics 56, 2(2016) 92-101
Influence of surface passivation on electric properties of individual GaAs nanowires studied by current-voltage AFM measurements
Lithuanian Journal of Physics 56, 2(2016) 92-101
Kaveh M, Gao Q, Jagadish C, Ge J, Duscher G, Wagner H
Controlling the exciton emission of gold coated GaAs-AlGaAs core-shell nanowires with an organic spacer layer
Nanotechnology 27, 48(2016)
Controlling the exciton emission of gold coated GaAs-AlGaAs core-shell nanowires with an organic spacer layer
Nanotechnology 27, 48(2016)
Kauppinen C, Haggrén T, Kravchenko A, Jiang H, Huhtio T, Kauppinen E, Dhaka V, Suihkonen S, Kaivola M, Lipsanen H, Sopanen M
A technique for large-area position-controlled growth of GaAs nanowire arrays
Nanotechnology 27, 13(2016) 1-6
A technique for large-area position-controlled growth of GaAs nanowire arrays
Nanotechnology 27, 13(2016) 1-6
Jagadish C, Yu P, Wu J, Liu S, Xiong J, Wang Z
Design and fabrication of silicon nanowires towards efficient solar cells
Nano Today 11, 6(2016) 704-737
Design and fabrication of silicon nanowires towards efficient solar cells
Nano Today 11, 6(2016) 704-737
Haggrén T, Otnes G, Mourao R, Dagyte V, Hultin O, Lindelow F, Borgstrom M, Samuelson L
InP nanowire p-type doping via Zinc indiffusion
Journal of Crystal Growth 451(2016) 18-26
InP nanowire p-type doping via Zinc indiffusion
Journal of Crystal Growth 451(2016) 18-26
Haggrén T
Lithography-free shell-substrate isolation for core-shell GaAs nanowires
Nanotechnology 27, 27(2016)
Lithography-free shell-substrate isolation for core-shell GaAs nanowires
Nanotechnology 27, 27(2016)
Guilhabert B, Hurtado A, Jevtics D, Gao Q, Tan H, Jagadish C, Dawson M
Transfer Printing of Semiconductor Nanowires with Lasing Emission for Controllable Nanophotonic Device Fabrication
ACS Nano 10, 4(2016) 3951-3958
Transfer Printing of Semiconductor Nanowires with Lasing Emission for Controllable Nanophotonic Device Fabrication
ACS Nano 10, 4(2016) 3951-3958
Gao Q, Dubrovskii V, Caroff-Gaonac'h P, Wong-Leung J, Li L, Guo Y, Fu L, Tan H, Jagadish C
Simultaneous Selective-Area and Vapor?Liquid?Solid Growth of InP Nanowire Arrays
Nano Letters 16, 7(2016) 4361-4367
Simultaneous Selective-Area and Vapor?Liquid?Solid Growth of InP Nanowire Arrays
Nano Letters 16, 7(2016) 4361-4367
Soo M, Zheng K, Gao Q, Tan H, Jagadish C, Zou J
Mirror-twin induced bicrystalline InAs nanoleaves
Nano Research 9, 3(2016) 766-773
Mirror-twin induced bicrystalline InAs nanoleaves
Nano Research 9, 3(2016) 766-773
Dhaka V, Pale V, Khayrudinov V, Kakko J, Haggrén T, Jiang H, Kauppinen E, Lipsanen H
Synthesis and properties of ultra-long InP nanowires on glass
Nanotechnology 27, 50(2016)
Synthesis and properties of ultra-long InP nanowires on glass
Nanotechnology 27, 50(2016)
Chen Y, Burgess T, An X, Mai Y, Tan H, Zou J, Ringer S, Jagadish C, Liao X
Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires
Nano Letters 16, 3(2016) 1911-1916
Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires
Nano Letters 16, 3(2016) 1911-1916
Chan K, Vines L, Li L, Jagadish C, Svensson B, Wong-Leung J
Zn precipitation and Li depletion in Zn implanted ZnO
Applied Physics Letters 109, 2(2016) 022102-1-4
Zn precipitation and Li depletion in Zn implanted ZnO
Applied Physics Letters 109, 2(2016) 022102-1-4
Camacho Morales M, Kruk S, Rahmani M, Wang L, Xu L, Smirnova D, Solntsev A, Miroshnichenko A, Tan H, Karouta F, Naureen S, Vora K, De Angelis C, Jagadish C, Kivshar Y, Neshev D, Carletti L
Nonlinear Generation of Vector Beams from AlGaAs Nanoantennas
Nano Letters 16, 11(2016) 7191-7197
Nonlinear Generation of Vector Beams from AlGaAs Nanoantennas
Nano Letters 16, 11(2016) 7191-7197
Cai Q, Du A, Gao G, Mateti s, Cowie B, Qian D, Zhang S, Lu Y, Fu L, Taniguchi T, Huang S, Chen Y, Ruoff R, Li L
Molecule-Induced Conformational Change in Boron Nitride Nanosheets with Enhanced Surface Adsorption
Advanced Functional Materials 26, 45(2016) 8202-8210
Molecule-Induced Conformational Change in Boron Nitride Nanosheets with Enhanced Surface Adsorption
Advanced Functional Materials 26, 45(2016) 8202-8210
Burgess T, Saxena D, Mokkapati S, Li Z, Hall C, Davis J, Wang Y, Smith L, Fu L, Caroff-Gaonac'h P, Tan H, Jagadish C
Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
Nature Communications 7(2016)
Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
Nature Communications 7(2016)
Liu G, Karuturi S, Simonov A, Fekete M, Chen H, Nasiri-Varg N, Le N, Narangari P, Lysevych M, Gengenbach T, Lowe A, Tan H, Jagadish C, Spiccia L, Tricoli A
Robust Sub-Monolayers of Co3O4 Nano-Islands: A Highly Transparent Morphology for Efficient Water Oxidation Catalysis
Advanced Energy Materials 6, 15(2016)
Robust Sub-Monolayers of Co3O4 Nano-Islands: A Highly Transparent Morphology for Efficient Water Oxidation Catalysis
Advanced Energy Materials 6, 15(2016)
Narangari P, Naureen S, Mokkapati S, Vora K, Shahid N, Karouta F, Tan H, Jagadish C
Enhanced luminescence from GaN nanopillar arrays fabricated using a top-down process
Nanotechnology 27, 6(2016) 1-6
Enhanced luminescence from GaN nanopillar arrays fabricated using a top-down process
Nanotechnology 27, 6(2016) 1-6
Nasiri-Varg N, Bo R, Chen H, White T, Fu L, Tricoli A
Structural Engineering of Nano-Grain Boundaries for Low-Voltage UV-Photodetectors with Gigantic Photo- to Dark-Current Ratios
Advanced Optical Materials 4, 11(2016) 1787-1795
Structural Engineering of Nano-Grain Boundaries for Low-Voltage UV-Photodetectors with Gigantic Photo- to Dark-Current Ratios
Advanced Optical Materials 4, 11(2016) 1787-1795
Soo M, Zheng K, Gao Q, Tan H, Jagadish C, Zou J
Temperature-dependent side-facets of GaAs nanopillars
Semiconductor Science and Technology 31, 9(2016)
Temperature-dependent side-facets of GaAs nanopillars
Semiconductor Science and Technology 31, 9(2016)
Shi T, Jackson H, Smith L, Jiang N, Tan H, Jagadish C
Thermal Delocalization of Excitons in GaAs/AlGaAs Quantum Well Tube Nanowires
Nano Letters 16, 2(2016) 1392-1397
Thermal Delocalization of Excitons in GaAs/AlGaAs Quantum Well Tube Nanowires
Nano Letters 16, 2(2016) 1392-1397
Saxena D, Jiang N, Yuan X, Mokkapati S, Guo Y, Tan H, Jagadish C
Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers
Nano Letters 16, 8(2016) 5080-5086
Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers
Nano Letters 16, 8(2016) 5080-5086
Rota M, Ameruddin A, Fonseka H, Gao Q, Mura F, Polimeni A, Miriametro A, Tan H, Jagadish C, Capizzi M
Bandgap Energy of Wurtzite InAs Nanowires
Nano Letters 16, 8(2016) 5197-5203
Bandgap Energy of Wurtzite InAs Nanowires
Nano Letters 16, 8(2016) 5197-5203
Peng K, Parkinson P, Boland J, Gao Q, Wenas Y, Davies C, Li Z, Fu L, Johnston M, Tan H, Jagadish C
Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors
Nano Letters 16, 8(2016) 4925-4931
Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors
Nano Letters 16, 8(2016) 4925-4931
Nguyen H, Phang S, Wong-Leung J, MacDonald D
Photoluminescence Excitation Spectroscopy of Diffused Layers on Crystalline Silicon Wafers
IEEE Journal of Photovoltaics 6, 3(2016) 746-753
Photoluminescence Excitation Spectroscopy of Diffused Layers on Crystalline Silicon Wafers
IEEE Journal of Photovoltaics 6, 3(2016) 746-753
Nasiri-Varg N, Bo R, Hung T, Roy V, Fu L, Tricoli A
Tunable Band-Selective UV-Photodetectors by 3D Self-Assembly of Heterogeneous Nanoparticle Networks
Advanced Functional Materials 26, 40(2016) 7359-7366
Tunable Band-Selective UV-Photodetectors by 3D Self-Assembly of Heterogeneous Nanoparticle Networks
Advanced Functional Materials 26, 40(2016) 7359-7366
Mokkapati S, Jagadish C
Review on photonic properties of nanowires for photovoltaics
Optics Express 24, 15(2016) 17345-17358
Review on photonic properties of nanowires for photovoltaics
Optics Express 24, 15(2016) 17345-17358
Badada B, Shi T, Jackson H, Smith L, Zheng C, Etheridge J, Gao Q, Tan H, Jagadish C
Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Localization
Nano Letters 15, 12(2015) 7847-7852
Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Localization
Nano Letters 15, 12(2015) 7847-7852
Zilli A, De Luca M, Tedeschi D, Fonseka H, Miriametro A, Tan H, Jagadish C, Capizzi M, Polimeni A
Temperature dependence of interband transitions in wurtzite InP nanowires
ACS Nano 9, 4(2015) 4277-4287
Temperature dependence of interband transitions in wurtzite InP nanowires
ACS Nano 9, 4(2015) 4277-4287
Chan K, Vines L, Li L, Jagadish C, Svensson B, Wong-Leung J
Equilibrium shape of nano-cavities in H implanted ZnO
Applied Physics Letters 106, 21(2015)
Equilibrium shape of nano-cavities in H implanted ZnO
Applied Physics Letters 106, 21(2015)
Burgess T, Caroff-Gaonac'h P, Wang Y, Badada B, Jackson H, Smith L, Guo Y, Tan H, Jagadish C
Zn3As2 Nanowires and Nanoplatelets: Highly Efficient Infrared Emission and Photodetection by an Earth Abundant Material
Nano Letters 15, 1(2015) 378-385
Zn3As2 Nanowires and Nanoplatelets: Highly Efficient Infrared Emission and Photodetection by an Earth Abundant Material
Nano Letters 15, 1(2015) 378-385
Davies C, Parkinson P, Jiang N, Boland J, Conesa-Boj S, Tan H, Jagadish C, Herz L, Johnston M
Low ensemble disorder in quantum well tube nanowires
Nanoscale 7, 48(2015) 20531-20538
Low ensemble disorder in quantum well tube nanowires
Nanoscale 7, 48(2015) 20531-20538
Badada B, Shi T, Jackson H, Smith L, Zheng C, Etheridge J, Gao Q, Tan H, Jagadish C
Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Localization
Nano Letters 15, 12(2015) 7847-7852
Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Localization
Nano Letters 15, 12(2015) 7847-7852
Ameruddin A, Fonseka H, Caroff-Gaonac'h P, Wong-Leung J, Op het Veld R, Boland J, Johnston M, Tan H, Jagadish C
Inx Ga1-x As nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology
Nanotechnology 26, 20(2015) 1-10
In
Nanotechnology 26, 20(2015) 1-10
Ameruddin A, Caroff-Gaonac'h P, Tan H, Jagadish C, Dubrovskii V
Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires
Nanoscale 7, 39(2015) 16266-16272
Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires
Nanoscale 7, 39(2015) 16266-16272
Yuan X, Caroff-Gaonac'h P, Wong-Leung J, Tan H, Jagadish C
Controlling the morphology, composition and crystal structure in gold-seeded GaAs1-xSbx nanowires
Nanoscale 7, 11(2015) 4995-5003
Controlling the morphology, composition and crystal structure in gold-seeded GaAs1-xSbx nanowires
Nanoscale 7, 11(2015) 4995-5003
Yuan X, Caroff-Gaonac'h P, Wong-Leung J, Fu L, Tan H, Jagadish C
Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering
Advanced Materials 27, 40(2015) 6096-6103
Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering
Advanced Materials 27, 40(2015) 6096-6103
Yuan X, Caroff-Gaonac'h P, Wang F, Guo Y, Wang Y, Jackson H, Smith L, Tan H, Jagadish C
Antimony Induced {112}A Faceted Triangular GaAs1-x Sbx /InP Core/Shell Nanowires and Their Enhanced Optical Quality
Advanced Functional Materials 25, 33(2015) 5300-5308
Antimony Induced {112}A Faceted Triangular GaAs
Advanced Functional Materials 25, 33(2015) 5300-5308
De Luca M, Zilli A, Fonseka H, Mokkapati S, Miriametro A, Tan H, Smith L, Jagadish C, Capizzi M, Polimeni A
Polarized light absorption in wurtzite InP nanowire ensembles
Nano Letters 15, 2(2015) 998-1005
Polarized light absorption in wurtzite InP nanowire ensembles
Nano Letters 15, 2(2015) 998-1005
Mokkapati S, Saxena D, Jiang N, Li L, Tan H, Jagadish C
An Order of Magnitude Increase in the Quantum Efficiency of (AI)GaAs Nanowires Using Hybrid Photonic-Plasmonic Modes
Nano Letters 15, 1(2015) 307-312
An Order of Magnitude Increase in the Quantum Efficiency of (AI)GaAs Nanowires Using Hybrid Photonic-Plasmonic Modes
Nano Letters 15, 1(2015) 307-312
Gupta N, Veettil B, Xia H, Karuturi S, Conibeer G, Shrestha S
Synthesis of nano-crystalline germanium carbide using radio frequency magnetron sputtering
Thin Solid Films 592(2015) 162-166
Synthesis of nano-crystalline germanium carbide using radio frequency magnetron sputtering
Thin Solid Films 592(2015) 162-166
Hu W, Lau K, Liu Y, Withers R, Chen H, Fu L, Gong B, Hutchison W
Colossal Dielectric Permittivity in (Nb+Al) Codoped Rutile TiO2 Ceramics: Compositional Gradient and Local Structure
Chemistry of Materials 27, 14(2015) 4934-4942
Colossal Dielectric Permittivity in (Nb+Al) Codoped Rutile TiO2 Ceramics: Compositional Gradient and Local Structure
Chemistry of Materials 27, 14(2015) 4934-4942
Kaveh M, Dyck O, Duscher G, Gao Q, Jagadish C, Wagner H
Exciton emission from hybrid organic and plasmonic polytype InP nanowire heterostructures
Materials Research Express 2, 4(2015) 1-13
Exciton emission from hybrid organic and plasmonic polytype InP nanowire heterostructures
Materials Research Express 2, 4(2015) 1-13
Li T, Lu H, Fu L, Tan H, Jagadish C, Dagenais M
Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells
Applied Physics Letters 106, 5(2015) 1-5
Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells
Applied Physics Letters 106, 5(2015) 1-5
Li Z, Wenas Y, Fu L, Mokkapati S, Tan H, Jagadish C
Influence of Electrical Design on Core-Shell GaAs Nanowire Array Solar Cells
IEEE Journal of Photovoltaics 5, 3(2015) 854-864
Influence of Electrical Design on Core-Shell GaAs Nanowire Array Solar Cells
IEEE Journal of Photovoltaics 5, 3(2015) 854-864
Li Z, Yuan X, Fu L, Peng K, Wang F, Fu X, Caroff-Gaonac'h P, White T, Jagadish C, Tan H
Room temperature GaAsSb single nanowire infrared photodetectors
Nanotechnology 26, 44(2015)
Room temperature GaAsSb single nanowire infrared photodetectors
Nanotechnology 26, 44(2015)
Lloyd-Hughes J, Failla M, Ye J, Jones S, Teo K, Jagadish C
Interfacial and bulk polaron masses in Zn1- x Mgx O/ZnO heterostructures examined by terahertz time-domain cyclotron spectroscopy
Applied Physics Letters 106, 20(2015) 1-4
Interfacial and bulk polaron masses in Zn
Applied Physics Letters 106, 20(2015) 1-4
Mokkapati S, Saxena D, Tan H, Jagadish C
Optical design of nanowire absorbers for wavelength selective photodetectors
Scientific Reports 5(2015)
Optical design of nanowire absorbers for wavelength selective photodetectors
Scientific Reports 5(2015)
Wang F, Gao Q, Peng K, Li Z, Guo Y, Fu L, Smith L, Tan H, Jagadish C
Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping
Nano Letters 15, 5(2015) 3017-3023
Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping
Nano Letters 15, 5(2015) 3017-3023
Chen Y, Gao Q, Wang Y, An X, Liao X, Mai Y, Tan H, Zou J, Ringer S, Jagadish C
Determination of Young's Modulus of Ultrathin Nanomaterials
Nano Letters 15, 8(2015) 5279-5283
Determination of Young's Modulus of Ultrathin Nanomaterials
Nano Letters 15, 8(2015) 5279-5283
Nguyen H, Rougieux F, Wang F, Tan H, MacDonald D
Micrometer-Scale Deep-Level Spectral Photoluminescence from Dislocations in Multicrystalline Silicon
IEEE Journal of Photovoltaics 5, 3(2015) 799-804
Micrometer-Scale Deep-Level Spectral Photoluminescence from Dislocations in Multicrystalline Silicon
IEEE Journal of Photovoltaics 5, 3(2015) 799-804
Niu W, Li X, Karuturi S, Fam D, Fan H, Shrestha S, Wong L, Tok A
Applications of atomic layer deposition in solar cells
Nanotechnology 26, 6(2015) 1-13
Applications of atomic layer deposition in solar cells
Nanotechnology 26, 6(2015) 1-13
Pemasiri K, Jackson H, Smith L, Wong B, Paiman S, Gao Q, Tan H, Jagadish C
Quantum confinement of excitons in wurtzite InP nanowires
Journal of Applied Physics 117, 19(2015) 1-4
Quantum confinement of excitons in wurtzite InP nanowires
Journal of Applied Physics 117, 19(2015) 1-4
Peng K, Parkinson P, Fu L, Gao Q, Jiang N, Guo Y, Wang F, Joyce H, Boland J, Tan H, Jagadish C, Johnston M
Single nanowire photoconductive terahertz detectors
Nano Letters 15, 1(2015) 206-210
Single nanowire photoconductive terahertz detectors
Nano Letters 15, 1(2015) 206-210
Saxena D, Wang F, Gao Q, Mokkapati S, Tan H, Jagadish C
Mode Profiling of Semiconductor Nanowire Lasers
Nano Letters 15, 8(2015) 5342-5348
Mode Profiling of Semiconductor Nanowire Lasers
Nano Letters 15, 8(2015) 5342-5348
Shi T, Jackson H, Smith L, Jiang N, Gao Q, Tan H, Jagadish C, Zheng C, Etheridge J
Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes
Nano Letters 15, 3(2015) 1876-1882
Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes
Nano Letters 15, 3(2015) 1876-1882
Sun W, Huang Y, Guo Y, Liao Z, Gao Q, Tan H, Jagadish C, Liao X, Zou J
Spontaneous formation of core-shell GaAsP nanowires and their enhanced electrical conductivity
Journal of Materials Chemistry C: materials for optical and electronic devices 3, 8(2015) 1745-1750
Spontaneous formation of core-shell GaAsP nanowires and their enhanced electrical conductivity
Journal of Materials Chemistry C: materials for optical and electronic devices 3, 8(2015) 1745-1750
Nasiri-Varg N, Bo R, Wang F, Fu L, Tricoli A
Ultraporous Electron-Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible-Blind UV Photodetectors
Advanced Materials 27, 29(2015) 4336-4343
Ultraporous Electron-Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible-Blind UV Photodetectors
Advanced Materials 27, 29(2015) 4336-4343
Lysevych M, Tan H, Karouta F, Jagadish C
Effect of active region position in Fabry-Perot single transverse mode broad-waveguide InGaAsP/InP lasers
Optics Express 22, 7(2014) 8156-8164
Effect of active region position in Fabry-Perot single transverse mode broad-waveguide InGaAsP/InP lasers
Optics Express 22, 7(2014) 8156-8164
Carrad D, Burke A, Lyttleton R, Joyce H, Tan H, Jagadish C, Storm K, Linke H, Samuelson L, Micolich A
Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors
Nano Letters 14, 1(2014) 94-100
Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors
Nano Letters 14, 1(2014) 94-100
Joyce H, Parkinson P, Jiang N, Docherty C, Gao Q, Tan H, Jagadish C, Herz L, Johnston M
"Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires"
Nano Letters 14, 10(2014) 5989-5994
"Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires"
Nano Letters 14, 10(2014) 5989-5994
Bao P, Wang Y, Cui X, Gao Q, Yen H, Liu H, Yeoh W, Liao X, Du S, Tan H, Jagadish C, Zou J, Ringer S, Zheng R
Atomic-scale observation of parallel development of super elasticity and reversible plasticity in GaAs nanowires
Applied Physics Letters 104, 2(2014) 1-4
Atomic-scale observation of parallel development of super elasticity and reversible plasticity in GaAs nanowires
Applied Physics Letters 104, 2(2014) 1-4
Chan K, Ton-That C, Vines L, Choi S, Phillips M, Svensson B, Jagadish C, Wong-Leung J
Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO
Journal of Physics D: Applied Physics 47, 34(2014) 1-6
Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO
Journal of Physics D: Applied Physics 47, 34(2014) 1-6
Chen Z, Lei W, Chen B, Wang Y, Liao X, Tan H, Zou J, Ringer S, Jagadish C
Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition
Applied Physics Letters 104, 2(2014) 022108
Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition
Applied Physics Letters 104, 2(2014) 022108
De Luca M, Polimeni A, Fonseka H, Meaney A, Christianen P, Maan J, Paiman S, Tan H, Mura F, Jagadish C, Capizzi M
Magneto-optical properties of wurtzite-phase InP nanowires
Nano Letters 14, 8(2014) 4250-4256
Magneto-optical properties of wurtzite-phase InP nanowires
Nano Letters 14, 8(2014) 4250-4256
Fonseka H, Caroff-Gaonac'h P, Wong-Leung J, Ameruddin A, Tan H, Jagadish C
Nanowires grown on InP (100): Growth Directions, Facets, Crystal Structures, and Relative Yield Control
ACS Nano 8, 7(2014) 6945-6954
Nanowires grown on InP (100): Growth Directions, Facets, Crystal Structures, and Relative Yield Control
ACS Nano 8, 7(2014) 6945-6954
Gao Q, Saxena D, Wang F, Fu L, Mokkapati S, Guo Y, Li L, Wong-Leung J, Caroff-Gaonac'h P, Tan H, Jagadish C
Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Nano Letters 14, 9(2014) 5206-5211
Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Nano Letters 14, 9(2014) 5206-5211
Jiang N, Wong-Leung J, Joyce H, Gao Q, Tan H, Jagadish C
Understanding the true shape of Au-catalyzed GaAs nanowires
Nano Letters 14, 10(2014) 5865-5872
Understanding the true shape of Au-catalyzed GaAs nanowires
Nano Letters 14, 10(2014) 5865-5872
Khaleque A, Li Z
Tailoring the properties of photonic nanojets by changing the material and geometry of the concentrator
Progress in Electromagnetics Research Letters 48(2014) 7-13
Tailoring the properties of photonic nanojets by changing the material and geometry of the concentrator
Progress in Electromagnetics Research Letters 48(2014) 7-13
McKerracher I, Fu L, Tan H, Jagadish C
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors with bandpass guided-mode resonance filters
Physica Status Solidi: Rapid Research Letters 8, 1(2014) 69-73
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors with bandpass guided-mode resonance filters
Physica Status Solidi: Rapid Research Letters 8, 1(2014) 69-73
Menelaou C, Tierney S, Blouin N, Mitchell W, Tiwana P, McKerracher I, Jagadish C, Carrasco M, Herz L
Effect of nanocrystalline domains in photovoltaic devices with benzodithiophene-based donor-acceptor copolymers
Journal of Physical Chemistry C 118, 31(2014) 17351-17361
Effect of nanocrystalline domains in photovoltaic devices with benzodithiophene-based donor-acceptor copolymers
Journal of Physical Chemistry C 118, 31(2014) 17351-17361
Ren F, Xu W, Ye J, Ang K, Lu H, Zhang R, Yu M, Lo G, Tan H, Jagadish C
Second-order surface-plasmon assisted responsivity enhancement in germanium nano-photodetectors with bull's eye antennas
Optics Express 22, 13(2014) 15949-15956
Second-order surface-plasmon assisted responsivity enhancement in germanium nano-photodetectors with bull's eye antennas
Optics Express 22, 13(2014) 15949-15956
Wang Y, Jackson H, Smith L, Burgess T, Paiman S, Gao Q, Tan H, Jagadish C
Carrier thermalization dynamics in single zincblende and wurtzite InP nanowires
Nano Letters 14, 12(2014) 7153-7160
Carrier thermalization dynamics in single zincblende and wurtzite InP nanowires
Nano Letters 14, 12(2014) 7153-7160
Staude I, Decker M, Ventura M, Jagadish C, Neshev D, Gu M, Kivshar Y
Hybrid high-resolution three-dimensional nanofabrication for metamaterials and nanoplasmonics
Advanced Materials 25, 9(2013) 1260-1264
Hybrid high-resolution three-dimensional nanofabrication for metamaterials and nanoplasmonics
Advanced Materials 25, 9(2013) 1260-1264
Ullah A, Joyce H, Burke A, Wong-Leung J, Tan H, Jagadish C, Micolich A
Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
Physica Status Solidi: Rapid Research Letters 7, 10(2013) 911-914
Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
Physica Status Solidi: Rapid Research Letters 7, 10(2013) 911-914
Saxena D, Mokkapati S, Parkinson P, Jiang N, Gao Q, Tan H, Jagadish C
Optically pumped room-temperature GaAs nanowire lasers
Nature Photonics 7, 12(2013) 963-968
Optically pumped room-temperature GaAs nanowire lasers
Nature Photonics 7, 12(2013) 963-968
Sun W, Guo Y, Xu H, Liao Z, Gao Q, Tan H, Jagadish C, Zou J
Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Journal of Physical Chemistry C 117, 37(2013) 19234-19238
Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Journal of Physical Chemistry C 117, 37(2013) 19234-19238
Perera S, Fickenscher M, Shi T, Jackson H, Smith L, Yarrison-Rice J, Paiman S, Gao Q, Tan H, Jagadish C
Illuminating the second conduction band and spin-orbit energy in single wurtzite InP nanowires
Nano Letters 13, 11(2013) 5367-5372
Illuminating the second conduction band and spin-orbit energy in single wurtzite InP nanowires
Nano Letters 13, 11(2013) 5367-5372
Sun W, Guo Y, Xu H, Gao Q, Tan H, Jagadish C, Zou J
Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate
Applied Physics Letters 103, 22(2013)
Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate
Applied Physics Letters 103, 22(2013)
Sun W, Guo Y, Xu H, Liao Z, Gao Q, Tan H, Jagadish C, Zou J
Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Journal of Physical Chemistry C 117, 37(2013) 19234-19238
Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Journal of Physical Chemistry C 117, 37(2013) 19234-19238
Sun W, Guo Y, Xu H, Gao Q, Tan H, Jagadish C, Zou J
Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate
Applied Physics Letters 103, 22(2013)
Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate
Applied Physics Letters 103, 22(2013)
Turner S, Mokkapati S, Jolley G, Fu L, Tan H, Jagadish C
Periodic dielectric structures for light-trapping in InGaAs/GaAs quantum well solar cells
Optics Express 21, 9(2013) A324-A335
Periodic dielectric structures for light-trapping in InGaAs/GaAs quantum well solar cells
Optics Express 21, 9(2013) A324-A335
Chen B, Gao Q, Chang L, Wang Y, Chen Z, Liao X, Tan H, Zou J, Ringer S, Jagadish C
Attraction of semiconductor nanowires: An in situ observation
Acta Materialia 61, 19(2013) 7166-7172
Attraction of semiconductor nanowires: An in situ observation
Acta Materialia 61, 19(2013) 7166-7172
Wang F, Toe W, Lee W, Gao Q, McGloin D, Tan H, Jagadish C, Reece P
Resolving stable axial trapping points of nanowires in an optical tweezers using photoluminescence mapping
Nano Letters 13, 3(2013) 1185-1191
Resolving stable axial trapping points of nanowires in an optical tweezers using photoluminescence mapping
Nano Letters 13, 3(2013) 1185-1191
Wang F, Toe W, Lee W, Gao Q, McGloin D, Tan H, Jagadish C, Reece P
Resolving stable axial trapping points of nanowires in an optical tweezers using photoluminescence mapping
Nano Letters 13, 3(2013) 1185-1191
Resolving stable axial trapping points of nanowires in an optical tweezers using photoluminescence mapping
Nano Letters 13, 3(2013) 1185-1191
Xu H, Guo Y, Liao Z, Sun W, Gao Q, Tan H, Jagadish C, Zou J
Catalyst size dependent growth of Pd-catalyzed one-dimensional InAs nanostructures
Applied Physics Letters 102, 20(2013) 1-5
Catalyst size dependent growth of Pd-catalyzed one-dimensional InAs nanostructures
Applied Physics Letters 102, 20(2013) 1-5
Ye J, Lim S, Gu S, Tan H, Jagadish C, Teo K
Origin and transport properties of two-dimensional electron gas at ZnMgO/ZnO interface grown by MOVPE
Physica Status Solidi C 10, 10(2013) 1268-1271
Origin and transport properties of two-dimensional electron gas at ZnMgO/ZnO interface grown by MOVPE
Physica Status Solidi C 10, 10(2013) 1268-1271
Yong C, Wong-Leung J, Joyce H, Lloyd-Hughes J, Gao Q, Tan H, Jagadish C, Johnson M, Herz L
Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions
Nano Letters 13, 9(2013) 4280-4287
Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions
Nano Letters 13, 9(2013) 4280-4287
Zheng C, Wong-Leung J, Gao Q, Tan H, Jagadish C, Etheridge J
Polarity-driven 3-fold symmetry of GaAs/AlGaAs core multishell nanowires
Nano Letters 13, 8(2013) 3742-3748
Polarity-driven 3-fold symmetry of GaAs/AlGaAs core multishell nanowires
Nano Letters 13, 8(2013) 3742-3748
Paiman S, Gao Q, Tan H, Jagadish C, Zhang X, Zou J
Effects of growth rate on InP nanowires morphology and crystal structure
Journal of Crystal Growth 383(2013) 100-105
Effects of growth rate on InP nanowires morphology and crystal structure
Journal of Crystal Growth 383(2013) 100-105
Chen B, Gao Q, Wang Y, Liao X, Mai Y, Tan H, Zou J, Jagadish C, Ringer S
Anelastic behavior in GaAs semiconductor nanowires
Nano Letters 13, 7(2013) 3169-3172
Anelastic behavior in GaAs semiconductor nanowires
Nano Letters 13, 7(2013) 3169-3172
Burgess T, Breuer S, Caroff-Gaonac'h P, Wong-Leung J, Gao Q, Tan H, Jagadish C
Twinning superlattice formation in GaAs nanowires
ACS Nano 7, 9(2013) 8105-8114
Twinning superlattice formation in GaAs nanowires
ACS Nano 7, 9(2013) 8105-8114
Chan K, Vines L, Johansen K, Monakhov E, Ye J, Parkinson P, Jagadish C, Svensson B, Wong-Leung J
Defect formation and thermal stability of H in high dose H implanted ZnO
Journal of Applied Physics 114, 8(2013)
Defect formation and thermal stability of H in high dose H implanted ZnO
Journal of Applied Physics 114, 8(2013)
Parkinson P, Lee Y, Fu L, Breuer S, Tan H, Jagadish C
Three-dimensional in situ photocurrent mapping for nanowire photovoltaics
Nano Letters 13, 4(2013) 1405-1409
Three-dimensional in situ photocurrent mapping for nanowire photovoltaics
Nano Letters 13, 4(2013) 1405-1409
Su L, Karuturi S, Luo J, Liu L, Liu X, Guo J, Sum T, Deng R, Fan H, Tok Iing Yoong A
Photon upconversion in hetero-nanostructured photoanodes for enhanced near-infrared light harvesting
Advanced Materials 25, 11(2013) 1603-1607
Photon upconversion in hetero-nanostructured photoanodes for enhanced near-infrared light harvesting
Advanced Materials 25, 11(2013) 1603-1607
Mokkapati S, Saxena D, Tan H, Jagadish C
Design considerations for semiconductor nanowire-plasmonic nanoparticle coupled systems for high quantum efficiency nanowires
Small 9, 23(2013) 3964-3969
Design considerations for semiconductor nanowire-plasmonic nanoparticle coupled systems for high quantum efficiency nanowires
Small 9, 23(2013) 3964-3969
Du S, Burgess T, Loi S, Gault B, Gao Q, Bao P, Li L, Cui X, Yeoh W, Tan H, Jagadish C, Ringer S, Zheng R
Full tip imaging in atom probe tomography
Ultramicroscopy 124(2013) 96-101
Full tip imaging in atom probe tomography
Ultramicroscopy 124(2013) 96-101
Guo Y, Burgess T, Gao Q, Tan H, Jagadish C, Zou J
Polarity-driven Nonuniform Composition in InGaAs Nanowires
Nano Letters 13, 11(2013) 5085-5089
Polarity-driven Nonuniform Composition in InGaAs Nanowires
Nano Letters 13, 11(2013) 5085-5089
Guo Y, Burgess T, Gao Q, Tan H, Jagadish C, Zou J
Polarity-driven nonuniform composition in InGaAs nanowires
Nano Letters 13, 11(2013) 5085-5089
Polarity-driven nonuniform composition in InGaAs nanowires
Nano Letters 13, 11(2013) 5085-5089
Mironov E, Li Z, Hattori H, Vora K, Tan H, Jagadish C
Titanium Nano-Antenna for High-Power Pulsed Operation
Journal of Lightwave Technology 31, 15(2013) 2459-2466
Titanium Nano-Antenna for High-Power Pulsed Operation
Journal of Lightwave Technology 31, 15(2013) 2459-2466
Fickenscher M, Shi T, Jackson H, Smith L, Yarrison-Rice J, Zheng C, Miller P, Etheridge J, Gao Q, Wong B, Deshpande S, Tan H, Jagadish C
Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes
Nano Letters 13, 3(2013) 1016-1022
Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes
Nano Letters 13, 3(2013) 1016-1022
Fair K, Cui X, Li L, Shieh C, Zheng R, Liu Z, Delley B, Ford M, Ringer S, Stampfl C
Hydrogen adsorption capacity of adatoms on double carbon vacancies of graphene: A trend study from first principles
Physical Review B 87, 1(2013) 0147102-1 to 04102-7
Hydrogen adsorption capacity of adatoms on double carbon vacancies of graphene: A trend study from first principles
Physical Review B 87, 1(2013) 0147102-1 to 04102-7
Du S, Burgess T, Loi S, Gault B, Gao Q, Bao P, Li L, Cui X, Yeoh W, Tan H, Jagadish C, Ringer S, Zheng R
Full tip imaging in atom probe tomography
Ultramicroscopy 124(2013) 96-101
Full tip imaging in atom probe tomography
Ultramicroscopy 124(2013) 96-101
Du S, Burgess T, Gault B, Gao Q, Bao P, Li L, Cui X, Yeoh W, Liu H, Yao L, Ceguerra A, Tan H, Jagadish C, Ringer S, Zheng R
Quantitative dopant distributions in GaAs nanowires using atom probe tomography
Ultramicroscopy 132(2013) 186-192
Quantitative dopant distributions in GaAs nanowires using atom probe tomography
Ultramicroscopy 132(2013) 186-192
Hattori H, Li Z
Arrays of recycled power TM polarized nano-antennas
Optics Express 21, 14(2013) 16273-16281
Arrays of recycled power TM polarized nano-antennas
Optics Express 21, 14(2013) 16273-16281
Du S, Burgess T, Gault B, Gao Q, Bao P, Li L, Cui X, Yeoh W, Liu H, Yao L, Ceguerra A, Tan H, Jagadish C, Ringer S, Zheng R
Quantitative dopant distributions in GaAs nanowires using atom probe tomography
Ultramicroscopy 132(2013) 186-192
Quantitative dopant distributions in GaAs nanowires using atom probe tomography
Ultramicroscopy 132(2013) 186-192
Decker M, Staude I, Shishkin I, Samusev K, Parkinson P, Sreenivasan V, Minovich A, Miroshnichenko A, Zvyagin A, Jagadish C, Neshev D, Kivshar Y
Dual-channel spontaneous emission of quantum dots in magnetic metamaterials
Nature Communications 4(2013) 10
Dual-channel spontaneous emission of quantum dots in magnetic metamaterials
Nature Communications 4(2013) 10
Decker M, Kremers C, Minovich A, Staude I, Miroshnichenko A, Chigrin D, Neshev D, Jagadish C, Kivshar Y
Electro-optical switching by liquid-crystal controlled metasurfaces
Biomedical Optics Express 21, 7(2013) 8879-8885
Electro-optical switching by liquid-crystal controlled metasurfaces
Biomedical Optics Express 21, 7(2013) 8879-8885
Cui X, Li L, Zheng R, Liu Z, Stampfl C, Ringer S
Graphene based dots and antidots: A comparative study from first principles
Journal of Nanoscience and Nanotechnology 13, 2(2013) 1251-1255
Graphene based dots and antidots: A comparative study from first principles
Journal of Nanoscience and Nanotechnology 13, 2(2013) 1251-1255
Chen Z, Lei W, Chen B, Wang Y, Liao X, Tan H, Zhou J, Ringer S, Jagadish C
Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy
Scripta Materialia 69, 8(2013) 638-641
Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy
Scripta Materialia 69, 8(2013) 638-641
Chen B, Wang J, Gao Q, Chen Y, Liao X, Lu C, Tan H, Mai Y, Zou J, Ringer S, Gao H, Jagadish C
Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing
Nano Letters 13, 9(2013) 4369-4373
Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing
Nano Letters 13, 9(2013) 4369-4373
Guo Y, Xu H, Auchterlonie G, Burgess T, Joyce H, Tan H, Gao Q, Jagadish C, Shu H, Chen X, Lu W, Kim Y, Zou J
Phase separation induced by Au catalysts in ternary InGaAs nanowires
Nano Letters 13, 2(2013) 643-650
Phase separation induced by Au catalysts in ternary InGaAs nanowires
Nano Letters 13, 2(2013) 643-650
Fonseka H, Tan H, Wong-Leung J, Kang J, Parkinson P, Jagadish C
High vertical yield InP nanowire growth on Si(111) using a thin buffer layer
Nanotechnology 24, 46(2013) 9
High vertical yield InP nanowire growth on Si(111) using a thin buffer layer
Nanotechnology 24, 46(2013) 9
Hu W, Liu Y, Withers R, Frankcombe T, Noren L, Snashall A, Kitchin M, Smith P, Gong B, Chen H, Schiemer J, Brink F, Wong-Leung J
Electron-pinned defect-dipoles for high-performance colossal permittivity materials
Nature Materials 12, 9(2013) 821-826
Electron-pinned defect-dipoles for high-performance colossal permittivity materials
Nature Materials 12, 9(2013) 821-826
Li Z, Hattori H, Mironov E
Charnia-like broadband plasmonic nano-antenna
Journal of Modern Optics 60, 10(2013) 790-796
Charnia-like broadband plasmonic nano-antenna
Journal of Modern Optics 60, 10(2013) 790-796
Mironov E, Li Z, Hattori H, Vora K, Tan H, Jagadish C
Titanium Nano-Antenna for High-Power Pulsed Operation
Journal of Lightwave Technology 31, 15(2013) 2459-2466
Titanium Nano-Antenna for High-Power Pulsed Operation
Journal of Lightwave Technology 31, 15(2013) 2459-2466
McKerracher I, Fu L, Tan H, Jagadish C
Integration of bandpass guided-mode resonance filters with mid-wavelength infrared photodetectors
Journal of Physics D: Applied Physics 46, 9(2013) 1-8
Integration of bandpass guided-mode resonance filters with mid-wavelength infrared photodetectors
Journal of Physics D: Applied Physics 46, 9(2013) 1-8
Jiang N, Gao Q, Parkinson P, Wong-Leung J, Mokkapati S, Breuer S, Tan H, Zheng C, Jagadish C, Etheridge J
Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell Nanowires through shell growth optimization
Nano Letters 13, 11(2013) 5135-5140
Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell Nanowires through shell growth optimization
Nano Letters 13, 11(2013) 5135-5140
Liu L, Li Z, Hattori H
Modal domains and selectivity in large square lasers
Journal of Microwaves, Optoelectronics and Electromagnetic Applications 12, 2(2013) 256-268
Modal domains and selectivity in large square lasers
Journal of Microwaves, Optoelectronics and Electromagnetic Applications 12, 2(2013) 256-268
Little D, Kuruwita R, Joyce A, Gao Q, Burgess T, Jagadish C, Kane D
Phase-stepping interferometry of GaAs nanowires: Determining nano-wire radius
Applied Physics Letters 103, 16(2013) 161107
Phase-stepping interferometry of GaAs nanowires: Determining nano-wire radius
Applied Physics Letters 103, 16(2013) 161107
Li Z, Liu L, Hattori H
Excitacao assimetrica de monopolos nanometricos
Revista Telecomunicacoes 15, 1(2013) 18-22
Excitacao assimetrica de monopolos nanometricos
Revista Telecomunicacoes 15, 1(2013) 18-22
Lysevych M, Tan H, Karouta F, Fu L, Jagadish C
Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers
Optics Express 21, 7(2013) 8276-8285
Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers
Optics Express 21, 7(2013) 8276-8285
Li Z, Hattori H
Analysis of interference between two optical beams in a quasi-zero electric permittivity photonic crystal superlattice
Applied Optics 52, 4(2013) 854-861
Analysis of interference between two optical beams in a quasi-zero electric permittivity photonic crystal superlattice
Applied Optics 52, 4(2013) 854-861
Kruk S, Helgert C, Decker M, Staude I, Menzel C, Etrich C, Rockstuhl C, Jagadish C, Pertsch T, Neshev D, Kivshar Y
Optical metamaterials with quasicrystalline symmetry: Symmetry-induced optical isotropy
Physical Review B: Condensed Matter and Materials 88, 20(2013) 1-5
Optical metamaterials with quasicrystalline symmetry: Symmetry-induced optical isotropy
Physical Review B: Condensed Matter and Materials 88, 20(2013) 1-5
Khaleque A, Li Z, Hattori H
Controlling the electric field enhancement factor of photonic nanojets by using the magneto-optical effect
Journal of Modern Optics 60, 21(2013) 1922-1926
Controlling the electric field enhancement factor of photonic nanojets by using the magneto-optical effect
Journal of Modern Optics 60, 21(2013) 1922-1926
Joyce H, Docherty C, Gao Q, Tan H, Jagadish C, Lloyd-Hughes J, Herz L, Johnston M
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
Nanotechnology 24, 21(2013) 7
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
Nanotechnology 24, 21(2013) 7
Jolley G, Fu L, Lu H, Tan H, Jagadish C
The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells
Progress in Photovoltaics: Research and Applications 21, 4(2013) 736-746
The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells
Progress in Photovoltaics: Research and Applications 21, 4(2013) 736-746
Jolley G, Faraone L, Fu L, Lu H, Tan H, Jagadish C
A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination
Applied Physics Letters 102, 21(2013) 1-4
A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination
Applied Physics Letters 102, 21(2013) 1-4
Lei W, Tan H, Jagadish C
Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique
Applied Physics Letters 102, 3(2013) 1-4
Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique
Applied Physics Letters 102, 3(2013) 1-4
Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Jiang N, Tan H, Jagadish C, Zou J
High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films
Crystal Growth & Design 12, 4(2012) 2018-2022
High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films
Crystal Growth & Design 12, 4(2012) 2018-2022
Xia H, Lu S, Li T, Parkinson P, Liao Z, Liu F, Lu W, Hu W, Chen P, Xu H, Zou J, Jagadish C
Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping
ACS Nano 6, 7(2012) 6005-6013
Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping
ACS Nano 6, 7(2012) 6005-6013
Xu H, Guo Y, Sun W, Liao Z, Burgess T, Lu H, Gao Q, Tan H, Jagadish C, Zou J
Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
Nanoscale Research Letters 7, 1(2012) 1-6
Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
Nanoscale Research Letters 7, 1(2012) 1-6
Xu H, Guo Y, Sun W, Liao Z, Burgess T, Lu H, Gao Q, Tan H, Jagadish C, Zou J
Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
Nanoscale Research Letters 7, 1(2012) 1-6
Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
Nanoscale Research Letters 7, 1(2012) 1-6
Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Tan H, Jagadish C, Zou J
Defect-Free < 110 > Zinc-Blende Structured InAs Nanowires Catalyzed by Palladium
Nano Letters 12, 11(2012) 5744-5749
Defect-Free < 110 > Zinc-Blende Structured InAs Nanowires Catalyzed by Palladium
Nano Letters 12, 11(2012) 5744-5749
Yong C, Joyce H, Lloyd-Hughes J, Gao Q, Tan H, Jagadish C, Johnston M, Herz L
Ultrafast Dynamics of Exciton Formation in Semiconductor Nanowires
Small 8, 11(2012) 1725-1731
Ultrafast Dynamics of Exciton Formation in Semiconductor Nanowires
Small 8, 11(2012) 1725-1731
Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Jiang N, Tan H, Jagadish C, Zou J
High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films
Crystal Growth & Design 12, 4(2012) 2018-2022
High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films
Crystal Growth & Design 12, 4(2012) 2018-2022
Ye J, Lim S, Bosman M, Gu S, Zheng Y, Tan H, Jagadish C, Sun X, Teo K
Spin-polarized Wide Electron Slabs in Functionally Graded Polar Oxide Heterostructures
Scientific Reports 2(2012)
Spin-polarized Wide Electron Slabs in Functionally Graded Polar Oxide Heterostructures
Scientific Reports 2(2012)
Ye J, Parkinson P, Ren F, Gu S, Tan H, Jagadish C
Raman probing of competitive laser heating and local recrystallization effect in ZnO nanocrystals
Biomedical Optics Express 20, 21(2012) 23281-23289
Raman probing of competitive laser heating and local recrystallization effect in ZnO nanocrystals
Biomedical Optics Express 20, 21(2012) 23281-23289
Yong C, Noori K, Gao Q, Joyce H, Tan H, Jagadish C, Giustino F, Johnston M, Herz L
Strong Carrier Lifetime Enhancement in GaAs Nanowires coated with Semiconducting Polymer
Nano Letters 12, 12(2012) 6293-6301
Strong Carrier Lifetime Enhancement in GaAs Nanowires coated with Semiconducting Polymer
Nano Letters 12, 12(2012) 6293-6301
Zuber K, Merkens K, Frölich K, Murphy P, Wong-Leung J, Evans D
Anderson-like localization in ultrathin nanocomposite alloy films on polymeric substrates
Scripta Materialia 67, 10(2012) 866-869
Anderson-like localization in ultrathin nanocomposite alloy films on polymeric substrates
Scripta Materialia 67, 10(2012) 866-869
Vines L, Wong-Leung J, Jagadish C, Quemener V, Monakhov E, Svensson B
Acceptor-like deep level defects in ion-implanted ZnO
Applied Physics Letters 100, 21(2012)
Acceptor-like deep level defects in ion-implanted ZnO
Applied Physics Letters 100, 21(2012)
Vines L, Wong-Leung J, Jagadish C, Monakhov E, Svensson B
Ion implantation induced defects in ZnO
Physica B 407, 10(2012) 1481-1484
Ion implantation induced defects in ZnO
Physica B 407, 10(2012) 1481-1484
Kang J, Gao Q, Parkinson P, Joyce H, Tan H, Jagadish C, Guo Y, Xu H, Zou J, Kim Y
Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates
Nanotechnology 23, 41(2012) 1-11
Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates
Nanotechnology 23, 41(2012) 1-11
Tao Z, Zhang R, Xiu X, Cui X, Li L, Li X, Xie Z, Zheng Y, Zheng R, Ringer S
Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD
Journal of Semiconductors (previously Chinese Journal of Semiconductors) 33, 7(2012) 1-4
Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD
Journal of Semiconductors (previously Chinese Journal of Semiconductors) 33, 7(2012) 1-4
Kim J, Moon S, Yoon H, Jung J, Kim Y, Chen Z, Zou J, Choi D, Joyce H, Gao Q, Tan H, Jagadish C
Taper-free and Vertically Oriented Ge Nanowires on Ge/Si Substrates Grown by a Two-Temperature Process
Crystal Growth & Design 12, 1(2012) 135-141
Taper-free and Vertically Oriented Ge Nanowires on Ge/Si Substrates Grown by a Two-Temperature Process
Crystal Growth & Design 12, 1(2012) 135-141
Bao P, Zheng R, Du S, Li L, Yeoh W, Cui X, Ringer S
Single crystal kinked ZnO [001] and [110] nanowires: Synthesis, characterization, and growth/kinking mechanism
Crystal Growth & Design 12, 6(2012) 3153-3157
Single crystal kinked ZnO [001] and [110] nanowires: Synthesis, characterization, and growth/kinking mechanism
Crystal Growth & Design 12, 6(2012) 3153-3157
Burke A, Waddington D, Carrad D, Lyttleton R, Tan H, Reece P, Klochan O, Hamilton A, Rai A, Reuter D, Wieck A, Micolich A
Origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
Physical Review B: Condensed Matter and Materials 86, 16(2012) 1-13
Origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
Physical Review B: Condensed Matter and Materials 86, 16(2012) 1-13
Charnvanichborikarn S, Wong-Leung J, Jagadish C, Williams J
Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon
MRS Communications 2, 3(2012) 101-105
Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon
MRS Communications 2, 3(2012) 101-105
Chen Z, Lei W, Chen B, Wang Y, Liao X, Tan H, Zou J, Ringer S, Jagadish C
Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
Nanoscale Research Letters 7, 1(2012) 486-486
Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
Nanoscale Research Letters 7, 1(2012) 486-486
Cheng C, Karuturi S, Liu L, Li H, Su L, Tok A, Fan H
Quantum-Dot-Sensitized TiO2 Inverse Opals for Photoelectrochemical Hydrogen Generation
Small 8, 1(2012) 37-42
Quantum-Dot-Sensitized TiO2 Inverse Opals for Photoelectrochemical Hydrogen Generation
Small 8, 1(2012) 37-42
Jiang N, Parkinson P, Breuer S, Gao Q, Tan H, Wong-Leung J, Jagadish C
Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1?xAs core-shell nanowires
Applied Physics Letters 101, 2(2012) 02311-1 to 02311-4
Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1?xAs core-shell nanowires
Applied Physics Letters 101, 2(2012) 02311-1 to 02311-4
Johnson B, Villis B, Burgess J, Stavrias N, McCallum J, Charnvanichborikarn S, Wong-Leung J, Jagadish C, Williams J
Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
Journal of Applied Physics 111, 9(2012) 094910/1-8
Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
Journal of Applied Physics 111, 9(2012) 094910/1-8
Jolley G, McKerracher I, Fu L, Tan H, Jagadish C
The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors
Journal of Applied Physics 111, 12(2012)
The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors
Journal of Applied Physics 111, 12(2012)
Sun M, Joyce H, Gao Q, Tan H, Jagadish C, Ning C
Removal of Surface States and Recovery of Band-Edge Emission in InAs Nanowires through Surface Passivation
Nano Letters 12, 7(2012) 3378-3384
Removal of Surface States and Recovery of Band-Edge Emission in InAs Nanowires through Surface Passivation
Nano Letters 12, 7(2012) 3378-3384
Karouta F, Vora K, Tian J, Jagadish C
Structural, Compositional and Optical properties of PECVD silicon nitride layers
Journal of Physics D: Applied Physics 45, 44(2012) 1-10
Structural, Compositional and Optical properties of PECVD silicon nitride layers
Journal of Physics D: Applied Physics 45, 44(2012) 1-10
Karuturi S, Cheng C, Liu L, Su L, Fan H, Tok A
Inverse opals coupled with nanowires as photoelectrochemical anode
Nano Energy 1, 2(2012) 322-327
Inverse opals coupled with nanowires as photoelectrochemical anode
Nano Energy 1, 2(2012) 322-327
Karuturi S, Luo J, Cheng C, Liu L, Su L, Tok A, Fan H
A novel photoanode with three-dimensionally, hierarchically ordered nanobushes for highly efficient photoelectrochemical cells
Advanced Materials 24, 30(2012) 4157-4162
A novel photoanode with three-dimensionally, hierarchically ordered nanobushes for highly efficient photoelectrochemical cells
Advanced Materials 24, 30(2012) 4157-4162
Kim J, Moon S, Kim Y, Chen Z, Zou J, Choi D, Joyce H, Gao Q, Tan H, Jagadish C
Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process
Nanotechnology 23, 11(2012) 115603-115603
Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process
Nanotechnology 23, 11(2012) 115603-115603
Joyce H, Wong-Leung J, Yong C, Docherty C, Paiman S, Gao Q, Tan H, Jagadish C, Lloyd-Hughes J, Herz L, Johnston M
Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy
Nano Letters 12, 10(2012) 5325-5330
Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy
Nano Letters 12, 10(2012) 5325-5330
Li L, Guo Y, Cui X, Zheng R, Ohtani K, Kong C, Ceguerra A, Moody M, Ye J, Tan H, Jagadish C, Liu H, Stampfl C, Ohno H, Ringer S, Matsukura F
Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
Physical Review B: Condensed Matter and Materials 85, 17(2012) 1-8
Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
Physical Review B: Condensed Matter and Materials 85, 17(2012) 1-8
Mokkapati S, Saxena D, Jiang N, Parkinson P, Wong-Leung J, Gao Q, Tan H, Jagadish C
Polarization Tunable, Multicolor Emission from Core-Shell Photonic III-V Semiconductor Nanowires
Nano Letters 12, 12(2012) 6428-6431
Polarization Tunable, Multicolor Emission from Core-Shell Photonic III-V Semiconductor Nanowires
Nano Letters 12, 12(2012) 6428-6431
Li L, Guo Y, Cui X, Zheng R, Ohtani K, Kong C, Ceguerra A, Moody M, Ye J, Tan H, Jagadish C, Liu H, Stampfl C, Ohno H, Ringer S, Matsukura F
Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
Physical Review B 85, 17(2012) 1-8
Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
Physical Review B 85, 17(2012) 1-8
Ren Q, Lu J, Tan H, Wu S, Sun L, Zhang W, Xie W, Sun Z, Zhu Y, Jagadish C, Shen S, Chen Z
Spin-resolved purcell effect in a quantum dot microcavity system
Nano Letters 12, 7(2012) 3455-3459
Spin-resolved purcell effect in a quantum dot microcavity system
Nano Letters 12, 7(2012) 3455-3459
Parkinson P, Jiang N, Gao Q, Tan H, Jagadish C
Direct-write non-linear photolithography for semiconductor nanowire characterization
Nanotechnology 23, 33(2012) 1-5
Direct-write non-linear photolithography for semiconductor nanowire characterization
Nanotechnology 23, 33(2012) 1-5
Montazeri M, Jackson H, Smith L, Yarrison-Rice J, Kang J, Gao Q, Tan H, Jagadish C
Transient Rayleigh scattering: A new probe of picosecond carrier dynamics in a single semiconductor nanowire
Nano Letters 12, 10(2012) 5389-5395
Transient Rayleigh scattering: A new probe of picosecond carrier dynamics in a single semiconductor nanowire
Nano Letters 12, 10(2012) 5389-5395
Staude I, Maksymov I, Decker M, Miroshnichenko A, Neshev D, Jagadish C, Kivshar Y
Broadband scattering by tapered nanoantennas
Physica Status Solidi: Rapid Research Letters 6, 12(2012) 466-468
Broadband scattering by tapered nanoantennas
Physica Status Solidi: Rapid Research Letters 6, 12(2012) 466-468
Minovich A, Farnell J, Neshev D, McKerracher I, Karouta F, Tian J, Powell D, Shadrivov I, Tan H, Jagadish C, Kivshar Y
Liquid crystal based nonlinear fishnet metamaterials
Applied Physics Letters 100, 12(2012) 121113-1-4
Liquid crystal based nonlinear fishnet metamaterials
Applied Physics Letters 100, 12(2012) 121113-1-4
Luo J, Karuturi S, Liu L, Su L, Tok A, Fan H
Homogeneous Photosensitization of Complex TiO2 Nanostructures for Efficient Solar Energy Conversion
Scientific Reports 2, 451(2012) 1-6
Homogeneous Photosensitization of Complex TiO2 Nanostructures for Efficient Solar Energy Conversion
Scientific Reports 2, 451(2012) 1-6
Lu H, Mokkapati S, Fu L, Jolley G, Tan H, Jagadish C
Plasmonic quantum dot solar cells for enhanced infrared response
Applied Physics Letters 100, 10(2012) 1 - 4
Plasmonic quantum dot solar cells for enhanced infrared response
Applied Physics Letters 100, 10(2012) 1 - 4
Liu M, Li X, Karuturi S, Tok Iing Yoong A, Fan H
Atomic layer deposition for nanofabrication and interface engineering
Nanoscale 4, 5(2012) 1522-1528
Atomic layer deposition for nanofabrication and interface engineering
Nanoscale 4, 5(2012) 1522-1528
Li Z, Hattori H, Parkinson P, Tian J, Fu L, Tan H, Jagadish C
A plasmonic staircase nano-antenna device with strong electric field enhancement for surface enhanced Raman scattering (SERS) applications
Journal of Physics D: Applied Physics 45, 30(2012) 1-5
A plasmonic staircase nano-antenna device with strong electric field enhancement for surface enhanced Raman scattering (SERS) applications
Journal of Physics D: Applied Physics 45, 30(2012) 1-5
McKerracher I, Fu L, Tan H, Jagadish C
Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers
Journal of Applied Physics 112, 11(2012) 1-11
Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers
Journal of Applied Physics 112, 11(2012) 1-11
Wang F, Reece P, Paiman S, Gao Q, Tan H, Jagadish C
Nonlinear Optical Processes in Optically Trapped InP Nanowires
Nano Letters 11, 10(2011) 4149-4153
Nonlinear Optical Processes in Optically Trapped InP Nanowires
Nano Letters 11, 10(2011) 4149-4153
Raihan M, Li Z, Liu D, Hattori H, Premaratne M
Combining different in-plane photonic wire lasers and coupling the resulting field into a single-mode waveguide
Progress in Electromagnetics Research C 21(2011) 191-203
Combining different in-plane photonic wire lasers and coupling the resulting field into a single-mode waveguide
Progress in Electromagnetics Research C 21(2011) 191-203
Reece P, Toe W, Wang F, Paiman S, Gao Q, Tan H, Jagadish C
Characterization of Semiconductor Nanowires Using Optical Tweezers
Nano Letters 11, 6(2011) 2375-2381
Characterization of Semiconductor Nanowires Using Optical Tweezers
Nano Letters 11, 6(2011) 2375-2381
Reece P, Toe W, Wang F, Paiman S, Gao Q, Tan H, Jagadish C
Characterization of Semiconductor Nanowires Using Optical Tweezers
Nano Letters 11, 6(2011) 2375-2381
Characterization of Semiconductor Nanowires Using Optical Tweezers
Nano Letters 11, 6(2011) 2375-2381
Su L, Ye J, Karuturi S, Liu L, Zhao Y, Guo J, Ah Qune L, Sum T, Tok A
High index, reactive facet-controlled synthesis of one-dimensional single crystalline rare earth hydroxide nanobelts
CrystEngComm 13, 17(2011) 5367-5373
High index, reactive facet-controlled synthesis of one-dimensional single crystalline rare earth hydroxide nanobelts
CrystEngComm 13, 17(2011) 5367-5373
Wu W, Xiao D, Wu J, Liang W, Li J, Zhang C, Wang Z, Li Z, Zhu J
Investigation of the low-temperature synthesis and the properties of BNT-BT ceramics
Gongneng Cailiao /Journal of Functional Materials 42, 11(2011) 2050-2052+2056
Investigation of the low-temperature synthesis and the properties of BNT-BT ceramics
Gongneng Cailiao /Journal of Functional Materials 42, 11(2011) 2050-2052+2056
Wang F, Reece P, Paiman S, Gao Q, Tan H, Jagadish C
Nonlinear Optical Processes in Optically Trapped InP Nanowires
Nano Letters 11, 10(2011) 4149-4153
Nonlinear Optical Processes in Optically Trapped InP Nanowires
Nano Letters 11, 10(2011) 4149-4153
Wang Y, Joyce H, Gao Q, Liao X, Tan H, Zou J, Ringer S, Shan Z, Jagadish C
Self-healing of fractured GaAs nanowires
Nano Letters 11, 4(2011) 1546-1549
Self-healing of fractured GaAs nanowires
Nano Letters 11, 4(2011) 1546-1549
Wang Y, Wang L, Joyce H, Gao Q, Liao X, Mai Y, Tan H, Zou J, Ringer S, Gao H, Jagadish C
Super Deformability and Young's Modulus of GaAs Nanowires
Advanced Materials Research 23, 11(2011) 1356-1360
Super Deformability and Young's Modulus of GaAs Nanowires
Advanced Materials Research 23, 11(2011) 1356-1360
Yeoh W, Gault B, Cui X, Zhu C, Moody M, Li L, Zheng R, Wang X, Li W, Dou S, Sun G, Lin C, Ringer S
Direct Observation of Local Potassium Variation and Its Correlation to Electronic Inhomogeneity in (Ba1-xKx)Fe2As2 Pnictide
Physical Review Letters 106, 24(2011) 047002-1 to 247002-4
Direct Observation of Local Potassium Variation and Its Correlation to Electronic Inhomogeneity in (Ba1-xKx)Fe2As2 Pnictide
Physical Review Letters 106, 24(2011) 047002-1 to 247002-4
Zhao Q, Wen G, Liu Z, Fan Y, Zou G, Li L, Zheng R, Ringer S, Mao H
Synthesis of dense, single-crystalline CrO2 nanowire arrays using AAO template-assisted chemical vapor deposition
Nanotechnology 22, 12(2011) 125603-125603
Synthesis of dense, single-crystalline CrO2 nanowire arrays using AAO template-assisted chemical vapor deposition
Nanotechnology 22, 12(2011) 125603-125603
Messing M, Wong-Leung J, Zanolli Z, Joyce H, Tan H, Gao Q, Wallenberg L, Johansson J, Jagadish C
Growth of Straight InAs-on-GaAs Nanowire Heterostructures
Nano Letters 11, 9(2011) 3899-3905
Growth of Straight InAs-on-GaAs Nanowire Heterostructures
Nano Letters 11, 9(2011) 3899-3905
Montazeri M, Wade A, Fickenscher M, Jackson H, Smith L, Yarrison-Rice J, Gao Q, Tan H, Jagadish C
Photomodulated Rayleigh Scattering of Single Semiconductor Nanowires: Probing Electronic Band Structure
Nano Letters 11, 10(2011) 4329-4336
Photomodulated Rayleigh Scattering of Single Semiconductor Nanowires: Probing Electronic Band Structure
Nano Letters 11, 10(2011) 4329-4336
Fickenscher M, Jackson H, Smith L, Yarrison-Rice J, Kang J, Paiman S, Gao Q, Tan H, Jagadish C
Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires
Applied Physics Letters 99, 26(2011) 1-4
Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires
Applied Physics Letters 99, 26(2011) 1-4
Menon R, Gupta V, Tan H, Sreenivas K, Jagadish C
Origin of stress in radio frequency magnetron sputtered zinc oxide thin films
Journal of Applied Physics 109, 6(2011) 064905 6
Origin of stress in radio frequency magnetron sputtered zinc oxide thin films
Journal of Applied Physics 109, 6(2011) 064905 6
Joyce H, Gao Q, Wong-Leung J, Kim Y, Tan H, Jagadish C
Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 17, 4(2011) 766-778
Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 17, 4(2011) 766-778
Andres-Arroyo A, Reece P, Johnson C, Vora K, Karouta F, Jagadish C
Wavelength selective filter based on polarization control in a photonic bandgap structure with a defect
Optics Express 19, 25(2011) 25643 - 25650
Wavelength selective filter based on polarization control in a photonic bandgap structure with a defect
Optics Express 19, 25(2011) 25643 - 25650
Cui X, Zheng R, Liu Z, Li L, Stampfl C, Ringer S
Quantification of graphene based core/shell quantum dots from first principles
Applied Physics Letters 99, 18(2011) 1-3
Quantification of graphene based core/shell quantum dots from first principles
Applied Physics Letters 99, 18(2011) 1-3
Cui X, Zheng R, Liu Z, Li L, Delley B, Stampfl C, Ringer S
Magic numbers of nanoholes in graphene: Tunable magnetism and semiconductivity
Physical Review B 84, 12(2011) 125410-1 to 125410-7
Magic numbers of nanoholes in graphene: Tunable magnetism and semiconductivity
Physical Review B 84, 12(2011) 125410-1 to 125410-7
Davis J, Hall C, Dao L, Nugent K, Quiney H, Tan H, Jagadish C
Three-dimensional electronic spectroscopy of excitons in asymmetric double quantum wells
Journal of Chemical Physics 135, 4(2011) 1-9
Three-dimensional electronic spectroscopy of excitons in asymmetric double quantum wells
Journal of Chemical Physics 135, 4(2011) 1-9
Du S, Fu L, Tan H, Jagadish C
Investigation of ion implantation induced intermixing in InP based quaternary quantum wells
Journal of Physics D: Applied Physics 44, 47(2011) 1-7
Investigation of ion implantation induced intermixing in InP based quaternary quantum wells
Journal of Physics D: Applied Physics 44, 47(2011) 1-7
Fraser M, Tan H, Jagadish C
Selective confinement of macroscopic long-lifetime exciton and trion populations
Physical Review B 84, 24(2011) 1-5
Selective confinement of macroscopic long-lifetime exciton and trion populations
Physical Review B 84, 24(2011) 1-5
McKerracher I, Wong-Leung J, Jolley G, Fu L, Tan H, Jagadish C
Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors
IEEE Journal of Quantum Electronics 47, 5(2011) 577-590
Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors
IEEE Journal of Quantum Electronics 47, 5(2011) 577-590
Gao Q, Joyce H, Paiman S, Kang J, Tan H, Kim Y, Smith L, Jackson H, Yarrison-Rice J, Zou J, Jagadish C
III-V compound semiconductor nanowires for optoelectronic device applications
International Journal of High Speed Electronics and Systems 20, 1(2011) 131-141
III-V compound semiconductor nanowires for optoelectronic device applications
International Journal of High Speed Electronics and Systems 20, 1(2011) 131-141
Gao Q, Tan H, Jackson H, Smith L, Yarrison-Rice J, Zou J, Jagadish C
Growth and properties of III-V compound semiconductor heterostructure nanowires
Semiconductor Science and Technology 26, 1(2011) 1-10
Growth and properties of III-V compound semiconductor heterostructure nanowires
Semiconductor Science and Technology 26, 1(2011) 1-10
Handapangoda D, Premaratne M, Rukhlenko I, Jagadish C
Optimal design of composite nanowires for extended reach of surface plasmon-polaritons
Optics Express 19, 17(2011) 16058 -16074
Optimal design of composite nanowires for extended reach of surface plasmon-polaritons
Optics Express 19, 17(2011) 16058 -16074
Headley C, Fu L, Parkinson P, Xu X, Lloyd-Hughes J, Jagadish C, Johnston M
Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1(2011) 17-21
Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1(2011) 17-21
Joyce H, Gao Q, Tan H, Jagadish C, Kim Y, Zou J, Smith L, Jackson H, Yarrison-Rice J, Parkinson P, Johnston M
III-V semiconductor nanowires for optoelectronic device applications
Progress in Quantum Electronics 35, 2-3(2011) 23-75
III-V semiconductor nanowires for optoelectronic device applications
Progress in Quantum Electronics 35, 2-3(2011) 23-75
Joyce H, Gao Q, Tan H, Jagadish C, Kim Y, Zou J, Smith L, Jackson H, Yarrison-Rice J, Parkinson P, Johnston M
III-V semiconductor nanowires for optoelectronic device applications
Progress in Quantum Electronics 35, 2-3(2011) 23-75
III-V semiconductor nanowires for optoelectronic device applications
Progress in Quantum Electronics 35, 2-3(2011) 23-75
Headley C, Fu L, Parkinson P, Xu X, Lloyd-Hughes J, Jagadish C, Johnston M
Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1(2011) 17-21
Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1(2011) 17-21
Kang J, Gao Q, Joyce H, Tan H, Jagadish C, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Defect-free GaAs/AlGaAs Core-shell nanowires on Si substrates
Crystal Growth & Design 11, 7(2011) 3109-3114
Defect-free GaAs/AlGaAs Core-shell nanowires on Si substrates
Crystal Growth & Design 11, 7(2011) 3109-3114
Liu L, Karuturi S, Su L, Tok A
TiO2 inverse-opal electrode fabricated by atomic layer deposition for dye-sensitized solar cell applications
Energy and Environmental Science 4, 1(2011) 209-215
TiO2 inverse-opal electrode fabricated by atomic layer deposition for dye-sensitized solar cell applications
Energy and Environmental Science 4, 1(2011) 209-215
McCallum J, Villis B, Johnson B, Stavrias N, Burgess J, Charnvanichborikarn S, Wong-Leung J, Williams J, Jagadish C
Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon
Physica Status Solidi A 208, 3(2011) 620-623
Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon
Physica Status Solidi A 208, 3(2011) 620-623
Lysevych M, Tan H, Karouta F, Jagadish C
Single-step RIE fabrication process of low loss InP waveguide using CH4/H2 chemistry
Journal of the Electrochemical Society 158, 3(2011) H281-H284
Single-step RIE fabrication process of low loss InP waveguide using CH4/H2 chemistry
Journal of the Electrochemical Society 158, 3(2011) H281-H284
Lu H, Fu L, Jolley G, Tan H, Rao Tatavarti S, Jagadish C
Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells
Applied Physics Letters 98, 18(2011) 183509/1-3
Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells
Applied Physics Letters 98, 18(2011) 183509/1-3
Kang J, Gao Q, Joyce H, Tan H, Jagadish C, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
Crystal Growth and Design 11, 7(2011) 3109-3114
Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
Crystal Growth and Design 11, 7(2011) 3109-3114
Liu L, Karuturi S, Su L, Wang Q, Tok A
Electrochromic photonic crystal displays with versatile color tunability
Electrochemistry Communications 13, 11(2011) 1163-1165
Electrochromic photonic crystal displays with versatile color tunability
Electrochemistry Communications 13, 11(2011) 1163-1165
Liu Y, Withers R, Chen H, Li Q, Tan H
Raman spectra, photoluminescence and dielectric relaxation in Bi1.5ZnNb1.5O7 pyrochlore
Current Applied Physics 11, 3(2011) S171-S174
Raman spectra, photoluminescence and dielectric relaxation in Bi1.5ZnNb1.5O7 pyrochlore
Current Applied Physics 11, 3(2011) S171-S174
Liu G, Fu L, Rode A, Craig V
Water droplet motion control on superhydrophobic surfaces: Exploiting the Wenzel-to-Cassie transition
Langmuir 27, 6(2011) 2595-2600
Water droplet motion control on superhydrophobic surfaces: Exploiting the Wenzel-to-Cassie transition
Langmuir 27, 6(2011) 2595-2600
Li Z, He Z, Xiao D, Wu W, Zhu J
Preparation, microstructure, piezoelectric and ferroelectric properties of piezoelectric ceramics with low-lead component
Gongneng Cailiao /Journal of Functional Materials 42, 10(2011) 1869-1872
Preparation, microstructure, piezoelectric and ferroelectric properties of piezoelectric ceramics with low-lead component
Gongneng Cailiao /Journal of Functional Materials 42, 10(2011) 1869-1872
Li Z, Hattori H, Fu L, Tan H, Jagadish C
Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18(2011) 2690-2697
Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18(2011) 2690-2697
Li Z, Hattori H, Fu L, Tan H, Jagadish C
Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18(2011) 2690-2697
Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18(2011) 2690-2697
Lei W, Tan H, Jagadish C
Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures via Sb exposure
Applied Physics Letters 99, 19(2011) 1-3
Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures via Sb exposure
Applied Physics Letters 99, 19(2011) 1-3
Karuturi S, Liu L, Su L, Chutinan A, Kherani N, Kuei Chan T, Osipowicz T, Tok A
Gradient inverse opal photonic crystals via spatially controlled template replication of self-assembled opals
Nanoscale 3, 12(2011) 4951-4954
Gradient inverse opal photonic crystals via spatially controlled template replication of self-assembled opals
Nanoscale 3, 12(2011) 4951-4954
Montazeri M, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J, Kang J, Gao Q, Tan H, Jagadish C, Guo Y, Zou J, Pistol M, Pryor C
Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires
Nano Letters 10, 3(2010) 880-886
Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires
Nano Letters 10, 3(2010) 880-886
Zhang P, Song Y, Zhang X, Tan J, Jagadish C, Tan H, Zhang Z
Tunable, high beam quality and narrow linewidth semiconductor disk laser
Optical Engineering 49, 10(2010) 5
Tunable, high beam quality and narrow linewidth semiconductor disk laser
Optical Engineering 49, 10(2010) 5
Smith L, Jackson H, Yarrison-Rice J, Jagadish C
Insights into single semiconductor nanowire heterostructures using time-resolved photoluminescence
Semiconductor Science and Technology 25, 2(2010) 1-13
Insights into single semiconductor nanowire heterostructures using time-resolved photoluminescence
Semiconductor Science and Technology 25, 2(2010) 1-13
Saha S, Gupta V, Sreenivas K, Tan H, Jagadish C
Third generation biosensing matrix based on Fe-implanted ZnO thin film
Applied Physics Letters 97, 13(2010) 3
Third generation biosensing matrix based on Fe-implanted ZnO thin film
Applied Physics Letters 97, 13(2010) 3
Perera S, Pemasiri K, Fickenscher M, Jackson H, Smith L, Yarrison-Rice J, Paiman S, Gao Q, Tan H, Jagadish C
Probing valence band structure in wurtzite InP nanowires using excitation spectroscopy
Applied Physics Letters 97, 2(2010)
Probing valence band structure in wurtzite InP nanowires using excitation spectroscopy
Applied Physics Letters 97, 2(2010)
Paiman S, Gao Q, Joyce H, Kim Y, Tan H, Jagadish C, Zhang X, Guo Y, Zou J
Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
Journal of Physics D: Applied Physics 43, 44(2010) 1-6
Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
Journal of Physics D: Applied Physics 43, 44(2010) 1-6
Paiman S, Gao Q, Joyce H, Kim Y, Tan H, Jagadish C, Zhang X, Guo Y, Zou J
Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
Journal of Physics D: Applied Physics 43, 44(2010) 1-6
Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
Journal of Physics D: Applied Physics 43, 44(2010) 1-6
Neshev D, Minovich A, Dieing T, Hattori H, McKerracher I, Tan H, Jagadish C, Kivshar Y
Near-field studies of arrays of chirped subwavelength apertures
Physica Status Solidi: Rapid Research Letters 4, 10(2010) 253-255
Near-field studies of arrays of chirped subwavelength apertures
Physica Status Solidi: Rapid Research Letters 4, 10(2010) 253-255
McKerracher I, Fu L, Tan H, Jagadish C
Thermal expansion coefficients and composition of sputter-deposited silicon oxynitride thin films
Journal of Physics D: Applied Physics 43, 33(2010) 8
Thermal expansion coefficients and composition of sputter-deposited silicon oxynitride thin films
Journal of Physics D: Applied Physics 43, 33(2010) 8
Montazeri M, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J, Kang J, Gao Q, Tan H, Jagadish C, Guo Y, Zou J, Pistol M, Pryor C
Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires
Nano Letters 10, 3(2010) 880-886
Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires
Nano Letters 10, 3(2010) 880-886
Joyce H, Wong-Leung J, Gao Q, Tan H, Jagadish C
Phase Perfection in Zinc Blende and Wurtzite III-V Nanowires Using Basic Growth Parameters
Nano Letters 10, 3(2010) 908-915
Phase Perfection in Zinc Blende and Wurtzite III-V Nanowires Using Basic Growth Parameters
Nano Letters 10, 3(2010) 908-915
Amaratunga V, Premaratne M, Tan H, Hattori H, Jagadish C
Performance assessment of hybrid surface emitting lasers with lateral one-dimensional photonic-crystal mirrors
Journal of the Optical Society of America B 27, 4(2010) 806-817
Performance assessment of hybrid surface emitting lasers with lateral one-dimensional photonic-crystal mirrors
Journal of the Optical Society of America B 27, 4(2010) 806-817
Barik S, Tan H, Wong-Leung J, Jagadish C
Growth and characterization of self-assembled InAs/InP quantum dot structures
Journal of Nanoscience and Nanotechnology 10, 3(2010) 1525-1536
Growth and characterization of self-assembled InAs/InP quantum dot structures
Journal of Nanoscience and Nanotechnology 10, 3(2010) 1525-1536
Charnvanichborikarn S, Villis B, Johnson B, Wong-Leung J, McCallum J, Williams J, Jagadish C
Effect of boron on interstitial-related luminescence centers in silicon
Applied Physics Letters 96, 5(2010) 051906
Effect of boron on interstitial-related luminescence centers in silicon
Applied Physics Letters 96, 5(2010) 051906
Dong H, Chen Z, Sun L, Xie W, Tan H, Lu J, Jagadish C, Shen X
Single-crystalline hexagonal ZnO microtube optical resonators
Journal of Materials Chemistry 20, 26(2010) 5510-5515
Single-crystalline hexagonal ZnO microtube optical resonators
Journal of Materials Chemistry 20, 26(2010) 5510-5515
Du S, Fu L, Tan H, Jagadish C
Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells
Semiconductor Science and Technology 25, 5(2010) 7
Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells
Semiconductor Science and Technology 25, 5(2010) 7
Hakkarainen T, Douheret O, Anand S, Fu L, Tan H, Jagadish C
Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy
Applied Physics Letters 97, 4(2010) 3
Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy
Applied Physics Letters 97, 4(2010) 3
Hall C, Dao L, Koike K, Sasa S, Tan H, Inoue M, Yano M, Jagadish C, Davis J
Using graded barriers to control the optical properties of ZnO/ Zn 0.7 Mg0.3 O quantum wells with an intrinsic internal electric field
Applied Physics Letters 96, 19(2010) 3
Using graded barriers to control the optical properties of ZnO/ Zn 0.7 Mg0.3 O quantum wells with an intrinsic internal electric field
Applied Physics Letters 96, 19(2010) 3
Minovich A, Neshev D, Powell D, Shadrivov I, Lapine M, McKerracher I, Hattori H, Tan H, Jagadish C, Kivshar Y
Tilted response of fishnet metamaterials at near-infrared optical wavelengths
Physical Review B: Condensed Matter and Materials 81, 11(2010) 6
Tilted response of fishnet metamaterials at near-infrared optical wavelengths
Physical Review B: Condensed Matter and Materials 81, 11(2010) 6
Jolley G, Fu L, Tan H, Jagadish C
The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Nanoscale 2, 7(2010) 1128-1133
The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Nanoscale 2, 7(2010) 1128-1133
Jolley G, Lu H, Fu L, Tan H, Jagadish C
Electron-hole recombination properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage
Applied Physics Letters 97, 12(2010) 3
Electron-hole recombination properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage
Applied Physics Letters 97, 12(2010) 3
Handapangoda D, Rukhlenko I, Premaratne M, Jagadish C
Optimization of gain-assisted waveguiding in metal-dielectric nanowires
Optics Letters 35, 24(2010) 4190-4192
Optimization of gain-assisted waveguiding in metal-dielectric nanowires
Optics Letters 35, 24(2010) 4190-4192
Jung J, Yoon H, Kim Y, Song M, Chen Z, Zou J, Choi D, Kang J, Joyce H, Gao Q, Tan H, Jagadish C
Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers
Nanotechnology 21, 29(2010) 295602-295602
Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers
Nanotechnology 21, 29(2010) 295602-295602
Lei W, Tan H, Jagadish C, Ren Q, Lu J, Chen Z
Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition
Applied Physics Letters 97, 22(2010) 3
Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition
Applied Physics Letters 97, 22(2010) 3
Kang J, Gao Q, Joyce H, Tan H, Jagadish C, Kim Y, Choi D, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Novel growth and properties of GaAs nanowires on Si substrates
Nanotechnology 21, 3(2010) 1-6
Novel growth and properties of GaAs nanowires on Si substrates
Nanotechnology 21, 3(2010) 1-6
Liu D, Hattori H, Fu L, Tan H, Jagadish C
Increasing the coupling efficiency of a microdisk laser to waveguides by using well designed spiral structures
Journal of Applied Physics 107, 4(2010) 043105-1 - 043105-8
Increasing the coupling efficiency of a microdisk laser to waveguides by using well designed spiral structures
Journal of Applied Physics 107, 4(2010) 043105-1 - 043105-8
Li Q, Tan H, Jagadish C
A new optical front-end compensation technique for suppression of spurious signal in photoreflectance spectroscopy using an antiphase signal
Review of Scientific Instruments 81, 4(2010) 43102-43102
A new optical front-end compensation technique for suppression of spurious signal in photoreflectance spectroscopy using an antiphase signal
Review of Scientific Instruments 81, 4(2010) 43102-43102
Liu D, Hattori H, Fu L, Tan H, Jagadish C
The temperature dependence of InGaAs single-wavelength quantum well and multi-wavelength quantum dot square resonator microlasers
Journal of Physics D: Applied Physics 43, 13(2010) 135102/ 1-6
The temperature dependence of InGaAs single-wavelength quantum well and multi-wavelength quantum dot square resonator microlasers
Journal of Physics D: Applied Physics 43, 13(2010) 135102/ 1-6
Lei W, Tan H, Jagadish C
Emission wavelength extension of mid-infrared InAsSb/InP nanostructures using InGaAsSb sandwich layers
Journal of Physics D: Applied Physics 43, 30(2010) 5
Emission wavelength extension of mid-infrared InAsSb/InP nanostructures using InGaAsSb sandwich layers
Journal of Physics D: Applied Physics 43, 30(2010) 5
Lei W, Tan H, Jagadish C
Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer
Applied Physics Letters 96, 21(2010) 3
Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer
Applied Physics Letters 96, 21(2010) 3
Kim Y, Jung J, Yoon H, Song M, Bae S, Chen Z, Zou J, Joyce H, Gao Q, Tan H, Jagadish C
CdS/CdSe lateral heterostructure nanobelts by a two-step physical vapor transport method
Nanotechnology 21, 14(2010) 145602-145602
CdS/CdSe lateral heterostructure nanobelts by a two-step physical vapor transport method
Nanotechnology 21, 14(2010) 145602-145602
Karuturi S, Liu L, Su L, Zhao Y, Fan H, Ge X, He S, Yoong A
Kinetics of Stop-Flow Atomic Layer Deposition for High Aspect Ratio Template Filling through Photonic Band Gap Measurements
Journal of Physical Chemistry C 114, 35(2010) 14843-14848
Kinetics of Stop-Flow Atomic Layer Deposition for High Aspect Ratio Template Filling through Photonic Band Gap Measurements
Journal of Physical Chemistry C 114, 35(2010) 14843-14848
Kang J, Gao Q, Joyce H, Tan H, Jagadish C, Kim Y, Choi D, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Novel growth and properties of GaAs nanowires on Si substrates
Nanotechnology 21, 3(2010) 1-6
Novel growth and properties of GaAs nanowires on Si substrates
Nanotechnology 21, 3(2010) 1-6
Parkinson P, Joyce H, Gao Q, Tan H, Zhang X, Jagadish C, Herz L, Johnston M
Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy
Nano Letters 9, 9(2009) 3349-3353
Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy
Nano Letters 9, 9(2009) 3349-3353
Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Evolution of epitaxial InAs nanowires on GaAs (111)B
Small 5, 3(2009) 366-369
Evolution of epitaxial InAs nanowires on GaAs (111)B
Small 5, 3(2009) 366-369
Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Evolution of Epitaxial InAs Nanowires on GaAs (111)B
Small 5, 3(2009) 366-369
Evolution of Epitaxial InAs Nanowires on GaAs (111)B
Small 5, 3(2009) 366-369
Xu H, Guo Y, Wang Y, Zou J, Kang J, Gao Q, Tan H, Jagadish C
Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si
Journal of Applied Physics 106, 083514(2009) 1-4
Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si
Journal of Applied Physics 106, 083514(2009) 1-4
Xu H, Guo Y, Wang Y, Zou J, Kang J, Gao Q, Tan H, Jagadish C
Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si
Journal of Applied Physics 106, 083514(2009) 1-4
Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si
Journal of Applied Physics 106, 083514(2009) 1-4
Wen X, Davis J, Dao L, Hannaford P, Coleman V, Tan H, Jagadish C, Koike K, Sasa S, Inoue M, Yano M
Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing
Journal of Luminescence 129, 2(2009) 153-157
Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing
Journal of Luminescence 129, 2(2009) 153-157
Rukhlenko I, Handapangoda D, Premaratne M, Fedorov A, Baranov A, Jagadish C
Spontaneous emission of guided polaritons by quantum dot coupled to metallic nanowire: Beyond the dipole approximation
Optics Express 17, 20(2009) 17570-1
Spontaneous emission of guided polaritons by quantum dot coupled to metallic nanowire: Beyond the dipole approximation
Optics Express 17, 20(2009) 17570-1
Reece P, Paiman S, Abdul-Nabi O, Gao Q, Gal M, Tan H, Jagadish C
Combined optical trapping and microphotoluminescence of single InP nanowires
Applied Physics Letters 95, 10(2009) 101109-1 - 101109-3
Combined optical trapping and microphotoluminescence of single InP nanowires
Applied Physics Letters 95, 10(2009) 101109-1 - 101109-3
Pemasiri K, Montazeri M, Gass R, Smith L, Jackson H, Yarrison-Rice J, Paiman S, Gao Q, Tan H, Jagadish C, Zhang X, Zou J
Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures
Nano Letters 9, 2(2009) 648-654
Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures
Nano Letters 9, 2(2009) 648-654
Parkinson P, Joyce H, Gao Q, Tan H, Zhang X, Jagadish C, Herz L, Johnston M
Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy
Nano Letters 9, 9(2009) 3349-3353
Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy
Nano Letters 9, 9(2009) 3349-3353
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Nanoscale Research Letters 4, 8(2009) 846-849
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Nanoscale Research Letters 4, 8(2009) 846-849
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Evolution of wurtzite structured GaAs shells around InAs nanowire cores
Nanoscale Research Letters 4, 8(2009) 846-849
Evolution of wurtzite structured GaAs shells around InAs nanowire cores
Nanoscale Research Letters 4, 8(2009) 846-849
Dong H, Chen Z, Sun L, Zhong L, Ling Y, Yu C, Tan H, Jagadish C, Shen X
Nanosheets-Based Rhombohedral In2O3 3D Hierarchical Microspheres: Synthesis, Growth Mechanism, and Optical Properties
Journal of Physical Chemistry C 113, 24(2009) 10511-10516
Nanosheets-Based Rhombohedral In2O3 3D Hierarchical Microspheres: Synthesis, Growth Mechanism, and Optical Properties
Journal of Physical Chemistry C 113, 24(2009) 10511-10516
Liu D, Hattori H, Fu L, Tan H, Jagadish C
Coupling Analysis of GaAs-Based Microdisk Lasers With Different External Claddings
Journal of Lightwave Technology 27, 22(2009) 5090-5098
Coupling Analysis of GaAs-Based Microdisk Lasers With Different External Claddings
Journal of Lightwave Technology 27, 22(2009) 5090-5098
Liu D, Hattori H, Fu L, Tan H, Jagadish C
Single-mode operation of a large optically pumped triangular laser with lateral air trenches
Journal of the Optical Society of America B 26, 7(2009) 1417-1422
Single-mode operation of a large optically pumped triangular laser with lateral air trenches
Journal of the Optical Society of America B 26, 7(2009) 1417-1422
Lei W, Tan H, Jagadish C
Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures
Applied Physics Letters 95, 14(2009) 143124-143124/3
Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures
Applied Physics Letters 95, 14(2009) 143124-143124/3
Lei W, Tan H, Jagadish C
Formation and shape control of InAsSb/InP (001) nanostructures
Applied Physics Letters 95, 013108(2009) 1-3
Formation and shape control of InAsSb/InP (001) nanostructures
Applied Physics Letters 95, 013108(2009) 1-3
Lei W, Notthoff C, Offer M, Meier C, Lorke A, Jagadish C, Wieck A
Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation
Journal of Materials Research 24, 7(2009) 2179-2184
Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation
Journal of Materials Research 24, 7(2009) 2179-2184
Joyce H, Gao Q, Tan H, Jagadish C, Kim Y, Fickenscher M, Perera S, Hoang T, Smith L, Jackson H, Yarrison-Rice J, Zhang X, Zou J
Unexpected Benefits of Rapid Growth Rate for III-V Nanowires
Nano Letters 9, 2(2009) 695-701
Unexpected Benefits of Rapid Growth Rate for III-V Nanowires
Nano Letters 9, 2(2009) 695-701
Jolley G, Xiao B, Fu L, Tan H, Jagadish C
Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Journal of Physics D: Applied Physics 42, 11(2009) 5
Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Journal of Physics D: Applied Physics 42, 11(2009) 5
Jolley G, Fu L, Tan H, Jagadish C
Properties of In0.5Ga0.5As/GaAs/ Al0.2Ga0.8 As quantum-dots-in-a-well infrared photodetectors
Journal of Physics D: Applied Physics 42, 9(2009) 8
Properties of In0.5Ga0.5As/GaAs/ Al0.2Ga0.8 As quantum-dots-in-a-well infrared photodetectors
Journal of Physics D: Applied Physics 42, 9(2009) 8
Hattori H, Liu D, Tan H, Jagadish C
Large Square Resonator Laser With Quasi-Single-Mode Operation
IEEE Photonics Technology Letters 21, 6(2009) 359-361
Large Square Resonator Laser With Quasi-Single-Mode Operation
IEEE Photonics Technology Letters 21, 6(2009) 359-361
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
Journal of Applied Physics 105, 073503(2009) 1-4
Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
Journal of Applied Physics 105, 073503(2009) 1-4
Hall C, Dao L, Koike K, Sasa S, Tan H, Inoue M, Yano M, Hannaford P, Jagadish C, Davis J
Recombination dynamics and screening of the internal electric field in ZnO/ZnxMg1-xO multiple quantum wells
Physical Review B: Condensed Matter and Materials 80, 23(2009) 6
Recombination dynamics and screening of the internal electric field in ZnO/ZnxMg1-xO multiple quantum wells
Physical Review B: Condensed Matter and Materials 80, 23(2009) 6
Hattori H, Li Z, Liu D, Rukhlenko I, Premaratne M
Coupling of light from microdisk lasers into plasmonic nano-antennas
Optics Express 17, 23(2009) 20878-84
Coupling of light from microdisk lasers into plasmonic nano-antennas
Optics Express 17, 23(2009) 20878-84
Dong H, Chen Z, Sun L, Lu J, Xie W, Tan H, Jagadish C, Shen X
Whispering gallery modes in indium oxide hexagonal microcavities
Applied Physics Letters 94, 173115(2009) 1-3
Whispering gallery modes in indium oxide hexagonal microcavities
Applied Physics Letters 94, 173115(2009) 1-3
Paiman S, Gao Q, Tan H, Jagadish C, Pemasiri K, Montazeri M, Jackson H, Smith L, Yarrison-Rice J, Zhang X, Zou J
The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires
Nanotechnology 20, 22(2009) 7
The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires
Nanotechnology 20, 22(2009) 7
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures
Angewandte Chemie International Edition 48, 4(2009) 780-783
Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures
Angewandte Chemie International Edition 48, 4(2009) 780-783
Amaratunga V, Hattori H, Premaratne M, Tan H, Jagadish C
Directional Optically Pumped Laterally Coupled DFB Lasers With Circular Mirrors
Journal of Lightwave Technology 27, 11(2009) 1425-1433
Directional Optically Pumped Laterally Coupled DFB Lasers With Circular Mirrors
Journal of Lightwave Technology 27, 11(2009) 1425-1433
Davis J, Jagadish C
Ultrafast spectroscopy of ZnO/ZnMgO quantum wells
Laser and Photonics Reviews 3, 1-2(2009) 85-96
Ultrafast spectroscopy of ZnO/ZnMgO quantum wells
Laser and Photonics Reviews 3, 1-2(2009) 85-96
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Formation of Hierarchical InAs Nanoring/GaAs Nanowire Heterostructures
Angewandte Chemie International Edition 48, 4(2009) 780-783
Formation of Hierarchical InAs Nanoring/GaAs Nanowire Heterostructures
Angewandte Chemie International Edition 48, 4(2009) 780-783
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
Journal of Applied Physics 105, 073503(2009) 1-4
Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
Journal of Applied Physics 105, 073503(2009) 1-4
Mokkapati S, Jagadish C
III-V Compound SC for Optoelectronic Devices
Materials Today 12, 4(2009) 22-32
III-V Compound SC for Optoelectronic Devices
Materials Today 12, 4(2009) 22-32
Minovich A, Hattori H, McKerracher I, Tan H, Neshev D, Jagadish C, Kivshar Y
Enhanced transmission of light through periodic and chirped lattices of nanoholes
Optics Communications 282(2009) 2023-2027
Enhanced transmission of light through periodic and chirped lattices of nanoholes
Optics Communications 282(2009) 2023-2027
Maharjan A, Pemasiri K, Kumar P, Wade A, Smith L, Jackson H, Yarrison-Rice J, Kogan A, Paiman S, Gao Q, Tan H, Jagadish C
Room temperature photocurrent spectroscopy of single zincblende and wurtzite InP nanowires
Applied Physics Letters 94, 19(2009) 3
Room temperature photocurrent spectroscopy of single zincblende and wurtzite InP nanowires
Applied Physics Letters 94, 19(2009) 3
Charnvanichborikarn S, Conway M, Wong-Leung J, Williams J
Achieving a narrow size distribution of Au particles at a precise depth in SiO2 by segregation of Au precipitates
Nanotechnology 20, 18(2009) 6
Achieving a narrow size distribution of Au particles at a precise depth in SiO2 by segregation of Au precipitates
Nanotechnology 20, 18(2009) 6
Charnvanichborikarn S, Wong-Leung J, Williams J
Self-assembled Au nanoparticles in SiO2 by ion implantation and wet oxidation
Journal of Applied Physics 106, 10(2009) 103526/1-8
Self-assembled Au nanoparticles in SiO2 by ion implantation and wet oxidation
Journal of Applied Physics 106, 10(2009) 103526/1-8
Zubiaga A, Tuomisto F, Coleman V, Tan H, Jagadish C, Koike K, Sasa S, Inoue M, Yano M
Mechanisms of electrical isolation in O+-irradiated ZnO
Physical Review B: Condensed Matter and Materials 78, 3(2008) 1-5
Mechanisms of electrical isolation in O+-irradiated ZnO
Physical Review B: Condensed Matter and Materials 78, 3(2008) 1-5
Zubiaga A, Tuomisto F, Coleman V, Jagadish C
Clusterization of vacancy defects in ZnO irradiated with 2 MeV O+
Applied Surface Science 255(2008) 234-236
Clusterization of vacancy defects in ZnO irradiated with 2 MeV O+
Applied Surface Science 255(2008) 234-236
Wong-Leung J, Janson M, Kuznetsov A, Svensson B, Linnarsson M, Hallen A, Jagadish C, Cockayne D
Ion implantation in 4H-SiC
Nuclear Instruments and Methods in Physics Research: Section B 266(2008) 1367-1372
Ion implantation in 4H-SiC
Nuclear Instruments and Methods in Physics Research: Section B 266(2008) 1367-1372
Wong-Leung J, Svensson B
Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC
Applied Physics Letters 92, 14(2008) 1-3
Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC
Applied Physics Letters 92, 14(2008) 1-3
Wen X, Dao L, Hannaford P, Mokkapati S, Tan H, Jagadish C
Electron dynamics in modulation p-doped InGaAs/GaAs quantum dots
European Physical Journal B 62(2008) 65-70
Electron dynamics in modulation p-doped InGaAs/GaAs quantum dots
European Physical Journal B 62(2008) 65-70
Vora K, Shew B, Lochel B, Harvey E, Hayes J, Peele A
Sidewall slopes and roughness of SU-8 HARMST
Microsystem Technologies 14, 9-11(2008) 1701-1708
Sidewall slopes and roughness of SU-8 HARMST
Microsystem Technologies 14, 9-11(2008) 1701-1708
Vora K, Shew B, Harvey E, Hayes J, Peele A
Sidewall slopes of SU-8 HARMST using deep x-ray lithography
Journal of Micromechanics and Microengineering 18(2008) 1-7
Sidewall slopes of SU-8 HARMST using deep x-ray lithography
Journal of Micromechanics and Microengineering 18(2008) 1-7
Song M, Jung J, Kim Y, Wang Y, Zou J, Joyce H, Gao Q, Tan H, Jagadish C
Vertically standing Ge nanowires on GaAs(110) substrates
Nanotechnology 19, 125602(2008) 1-6
Vertically standing Ge nanowires on GaAs(110) substrates
Nanotechnology 19, 125602(2008) 1-6
Hattori H, Tan H, Jagadish C
Optically Pumped In-Plane Photonic Crystal Microcavity Laser Arrays Coupled to Waveguides
Journal of Lightwave Technology 26, 11(2008) 1374-1380
Optically Pumped In-Plane Photonic Crystal Microcavity Laser Arrays Coupled to Waveguides
Journal of Lightwave Technology 26, 11(2008) 1374-1380
Amaratunga V, Hattori H, Premaratne M, Tan H, Jagadish C
Photonic crystal phase detectors
Journal of the Optical Society of America B 25, 9(2008) 1532-1536
Photonic crystal phase detectors
Journal of the Optical Society of America B 25, 9(2008) 1532-1536
Buda M, Iordache G, Mokkapati S, Tan H, Jagadish C, Stancu V, Botila T
Capacitance spectroscopy study of InGaAs/GaAs quantum dot structures
Journal of Optoelectronics and Advanced Materials 10, 2(2008) 323-326
Capacitance spectroscopy study of InGaAs/GaAs quantum dot structures
Journal of Optoelectronics and Advanced Materials 10, 2(2008) 323-326
Buda M, Iordache G, Mokkapati S, Fu L, Jolley G, Tan H, Jagadish C
Analytical expression for the quantum dot contribution to the quasi static capacitance for conduction band characterization
Journal of Applied Physics 104, 2(2008) 1-11
Analytical expression for the quantum dot contribution to the quasi static capacitance for conduction band characterization
Journal of Applied Physics 104, 2(2008) 1-11
Burgess T, Jagadish C
Nanoscale Materials: How Small is Big
Proceedings of the IEEE 96, 12(2008) 1895-1897
Nanoscale Materials: How Small is Big
Proceedings of the IEEE 96, 12(2008) 1895-1897
Castro-Camus E, Fu L, Lloyd-Hughes J, Tan H, Jagadish C, Johnston M
Photoconductive response correction for detectors of terahertz radiation
Journal of Applied Physics 104, 053113(2008) 1-7
Photoconductive response correction for detectors of terahertz radiation
Journal of Applied Physics 104, 053113(2008) 1-7
Chen H, Chen Y, Liu Y, Fu L, Huang C, Llewellyn D
Over 1.0 mm-long boron nitride nanotubes
Chemical Physics Letters 463, 1-3(2008) 130-133
Over 1.0 mm-long boron nitride nanotubes
Chemical Physics Letters 463, 1-3(2008) 130-133
Perera S, Fickenscher M, Jackson H, Smith L, Yarrison-Rice J, Joyce H, Gao Q, Tan H, Jagadish C, Zhang X, Zou J
Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
Applied Physics Letters 93, 5(2008) 1-3
Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
Applied Physics Letters 93, 5(2008) 1-3
Davis J, Dao L, Wen X, Ticknor C, Hannaford P, Coleman V, Tan H, Jagadish C, Koike K, Sasa S, Inoue M, Yano M
Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing
Nanotechnology 19, 5(2008) 1-4
Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing
Nanotechnology 19, 5(2008) 1-4
Fu L, Li Q, Kuffner P, Jolley G, Gareso P, Tan H, Jagadish C
Two-color InGaAs/GaAs quantum dot infrared photodetectors by selective area interdiffusion
Applied Physics Letters 93, 1(2008) 1-3
Two-color InGaAs/GaAs quantum dot infrared photodetectors by selective area interdiffusion
Applied Physics Letters 93, 1(2008) 1-3
Chen H, Zhang H, Fu L, Chen Y, Williams J, Yu C, Yu D
Nano Au-decorated boron nitride nanotubes: Conductance modification and field-emission enhancement
Applied Physics Letters 92, 243105(2008) 1-3
Nano Au-decorated boron nitride nanotubes: Conductance modification and field-emission enhancement
Applied Physics Letters 92, 243105(2008) 1-3
Jolley G, Fu L, Tan H, Jagadish C
Effects of well thickness on the spectral properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Applied Physics Letters 92, 19(2008) 1-3
Effects of well thickness on the spectral properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Applied Physics Letters 92, 19(2008) 1-3
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
Applied Physics Letters 93, 201908(2008) 1-3
Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
Applied Physics Letters 93, 201908(2008) 1-3
Jolley G, Fu L, Tan H, Jagadish C
Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors
Journal of Physics D: Applied Physics 41, 215101(2008) 1-7
Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors
Journal of Physics D: Applied Physics 41, 215101(2008) 1-7
Paladugu M, Zou J, Guo Y, Zhang X, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
Applied Physics Letters 93, 101911(2008) 1-3
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
Applied Physics Letters 93, 101911(2008) 1-3
Paladugu M, Zou J, Guo Y, Zhang X, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
Applied Physics Letters 93, 101911(2008) 1-3
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
Applied Physics Letters 93, 101911(2008) 1-3
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
Applied Physics Letters 93, 201908(2008) 1-3
Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
Applied Physics Letters 93, 201908(2008) 1-3
Mokkapati S, Wong-Leung J, Tan H, Jagadish C, McBean K, Phillips M
Tuning the bandgap of InAs quantum dots by selective-area MOCVD
Journal of Physics D: Applied Physics 41, 085104(2008) 1-4
Tuning the bandgap of InAs quantum dots by selective-area MOCVD
Journal of Physics D: Applied Physics 41, 085104(2008) 1-4
Mokkapati S, Tan H, Jagadish C, Buda M
Self-sustained output power pulsations in InGaAs quantum dot ridge-waveguide lasers
Applied Physics Letters 92, 021104(2008) 1-3
Self-sustained output power pulsations in InGaAs quantum dot ridge-waveguide lasers
Applied Physics Letters 92, 021104(2008) 1-3
Li Q, Barik S, Tan H, Jagadish C
Effect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots
Journal of Physics D: Applied Physics 41, 205107(2008) 1-6
Effect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots
Journal of Physics D: Applied Physics 41, 205107(2008) 1-6
Lei W, Jagadish C
Lasers and photodetectors for mid-infrared 2-3 um applications
Journal of Applied Physics 104, 9(2008) 1-11
Lasers and photodetectors for mid-infrared 2-3 um applications
Journal of Applied Physics 104, 9(2008) 1-11
Joyce H, Gao Q, Tan H, Jagadish C, Kim Y, Fickenscher M, Perera S, Hoang T, Smith L, Jackson H, Yarrison-Rice J, Zhang X, Zou J
High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization
Advanced Functional Materials 18(2008) 3794-3800
High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization
Advanced Functional Materials 18(2008) 3794-3800
Wen X, Dao L, Hannaford P, Mokkapati S, Tan H, Jagadish C
The state filling effect in p-doped InGaAs/GaAs quantum dots
Journal of Physics: Condensed Matter 19(2007) 386213/ 1-10
The state filling effect in p-doped InGaAs/GaAs quantum dots
Journal of Physics: Condensed Matter 19(2007) 386213/ 1-10
Kim Y, Joyce H, Jagadish C
Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
AIP Conference Proceedings 893(2007) 869-870
Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
AIP Conference Proceedings 893(2007) 869-870
Guo Y, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process
Nano Letters 7, 4(2007) 921-926
Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process
Nano Letters 7, 4(2007) 921-926
Vora K
Fabrication of support structures to prevent SU-8 stiction in high aspect ratio structures
Microsystem Technologies 13, 5-6(2007) 487-493
Fabrication of support structures to prevent SU-8 stiction in high aspect ratio structures
Microsystem Technologies 13, 5-6(2007) 487-493
Vora K
Production issues for high aspect ratio Lobster-eye optics using LIGA
Microsystem Technologies 13, 5-6(2007) 511-515
Production issues for high aspect ratio Lobster-eye optics using LIGA
Microsystem Technologies 13, 5-6(2007) 511-515
Vora K, Shew B
Effect of process parameters and packing density on development times for densely packed high-aspect-ratio SU-8 microstructures in x-ray lithography
Journal of Micro/ Nanolithography, MEMS, and MOEMS 6, 1(2007)
Effect of process parameters and packing density on development times for densely packed high-aspect-ratio SU-8 microstructures in x-ray lithography
Journal of Micro/ Nanolithography, MEMS, and MOEMS 6, 1(2007)
Zou J, Paladugu M, Wang H, Auchterlonie G, Guo Y, Kim Y, Gao Q, Joyce H, Tan H, Jagadish C
Growth Mechanism of Truncated Triangular III-V Nanowires
Small 3, 3(2007) 389-393
Growth Mechanism of Truncated Triangular III-V Nanowires
Small 3, 3(2007) 389-393
Zou J, Paladugu M, Wang H, Auchterlonie G, Guo Y, Kim Y, Gao Q, Joyce H, Tan H, Jagadish C
Growth mechanism of truncated triangular III-V nanowires
Small 3, 3(2007) 389-393
Growth mechanism of truncated triangular III-V nanowires
Small 3, 3(2007) 389-393
Wen X, Davis J, McDonald D, Dao L, Hannaford P, Coleman V, Tan H, Jagadish C, Koike K, Sasa S, Inoue M, Yano M
Ultrafast dynamics in ZnO/ZnMgO multiple quantum wells
Nanotechnology 18(2007) 315403 1-5
Ultrafast dynamics in ZnO/ZnMgO multiple quantum wells
Nanotechnology 18(2007) 315403 1-5
Wen X, Davis J, Dao L, Hannaford P, Coleman V, Tan H, Jagadish C, Koike K, Sasa S, Inoue M, Yano M
Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells
Applied Physics Letters 90(2007) 221914/ 1-3
Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells
Applied Physics Letters 90(2007) 221914/ 1-3
Fu L, McKerracher I, Tan H, Jagadish C, Vukmirovic N, Harrison P
Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition
Applied Physics Letters 91(2007) 073515 1-3
Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition
Applied Physics Letters 91(2007) 073515 1-3
Wen X, Dao L, Davis J, Hannaford P, Mokkapati S, Tan H, Jagadish C
Carrier dynamics in p-type InGaAs/GaAs quantum dots
Journal of Materials Science: Materials in Electronics 18(2007) S363-S365
Carrier dynamics in p-type InGaAs/GaAs quantum dots
Journal of Materials Science: Materials in Electronics 18(2007) S363-S365
Jolley G, Fu L, Tan H, Jagadish C
Influence of quantum well and barrier composition on the spectral behavior in InGasAs quantum dots-in-a-well infrared photodetectors
Applied Physics Letters 91(2007) 173508 1-3
Influence of quantum well and barrier composition on the spectral behavior in InGasAs quantum dots-in-a-well infrared photodetectors
Applied Physics Letters 91(2007) 173508 1-3
Titova L, Hoang T, Yarrison-Rice J, Jackson H, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C, Zhang X, Zou J, Smith L
Dynamics of Strongly Degenerate Electron-Hole Plasmas and Excitons in Single InP Nanowires
Nano Letters 7, 11(2007) 3383-3387
Dynamics of Strongly Degenerate Electron-Hole Plasmas and Excitons in Single InP Nanowires
Nano Letters 7, 11(2007) 3383-3387
Ashrafi A, Jagadish C
Review of zincblende ZnO: Stability of metastable ZnO phases
Journal of Applied Physics 102(2007) 071101 1-12
Review of zincblende ZnO: Stability of metastable ZnO phases
Journal of Applied Physics 102(2007) 071101 1-12
Barik S, Fu L, Tan H, Jagadish C
Impurity-free disordering of InAs/InP quantum dots
Applied Physics Letters 90(2007) 243114 1-3
Impurity-free disordering of InAs/InP quantum dots
Applied Physics Letters 90(2007) 243114 1-3
Barik S, Tan H, Jagadish C
Comparison of proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots
Nanotechnology 18(2007) 175305 1-4
Comparison of proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots
Nanotechnology 18(2007) 175305 1-4
Barik S, Tan H, Jagadish C
High temperature rapid thermal annealing of phosphorous ion implanted InAs/InP quantum dots
Applied Physics Letters 90(2007) 093106 1-3
High temperature rapid thermal annealing of phosphorous ion implanted InAs/InP quantum dots
Applied Physics Letters 90(2007) 093106 1-3
Castro-Camus E, Lloyd-Hughes J, Fu L, Tan H, Jagadish C, Johnston M
An ion-implanted InP receiver for polarization resolved terahertz spectroscopy
Optics Express 15, 11(2007) 1-11
An ion-implanted InP receiver for polarization resolved terahertz spectroscopy
Optics Express 15, 11(2007) 1-11
Chen Y, Fu L, Zou J, Li J, Duan W
Tunable Electric Conductivities of Au-Doped Boron Nitride Nanotubes
NANO 2, 6(2007) 1-6
Tunable Electric Conductivities of Au-Doped Boron Nitride Nanotubes
NANO 2, 6(2007) 1-6
Coleman P, Harding R, Davies G, Tan J, Wong-Leung J
The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si
Journal of Materials Science 18(2007) 695-700
The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si
Journal of Materials Science 18(2007) 695-700
Gareso P, Buda M, Fu L, Tan H, Jagadish C
Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures
Semiconductor Science and Technology 22(2007) 988-992
Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures
Semiconductor Science and Technology 22(2007) 988-992
Hattori H, McKerracher I, Tan H, Jagadish C, De La Rue R
In-plane coupling of light from InP-based photonic crystal band-edge lasers into single-mode waveguides
IEEE Journal of Quantum Electronics 43, 4(2007) 279-286
In-plane coupling of light from InP-based photonic crystal band-edge lasers into single-mode waveguides
IEEE Journal of Quantum Electronics 43, 4(2007) 279-286
Hattori H, Tan H, Jagadish C
Analysis of optically pumped compact laterally coupled distributed feedback lasers with three symmetric defect regions
Journal of Applied Physics 102(2007) 083109 1-8
Analysis of optically pumped compact laterally coupled distributed feedback lasers with three symmetric defect regions
Journal of Applied Physics 102(2007) 083109 1-8
Hoang T, Titova L, Yarrison-Rice J, Jackson H, Govorov A, Kim Y, Joyce H, Tan H, Jagadish C, Smith L
Resonant Excitation and Imaging of Nonequilibrium Exciton Spins in Single Core-Shell GaAs-AlGaAs Nanowires
Nano Letters 7, 3(2007) 588-595
Resonant Excitation and Imaging of Nonequilibrium Exciton Spins in Single Core-Shell GaAs-AlGaAs Nanowires
Nano Letters 7, 3(2007) 588-595
Joyce H, Gao Q, Tan H, Jagadish C, Kim Y, Zhang X, Guo Y, Zou J
Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process
Nano Letters 7, 4(2007) 921-926
Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process
Nano Letters 7, 4(2007) 921-926
Paladugu M, Zou J, Auchterlonie G, Guo Y, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Evolution of InAs branches in InAs/GaAs nanowire heterostructures
Applied Physics Letters 91, 13(2007) 133115 1-3
Evolution of InAs branches in InAs/GaAs nanowire heterostructures
Applied Physics Letters 91, 13(2007) 133115 1-3
Sathish N, Dhamodaran S, Pathak A, Krishna G, Khan S, Avasthi D, Pandey A, Muralidharan R, Jagadish C, Li G
HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers
Nuclear Instruments and Methods in Physics Research: Section B 256(2007) 281-287
HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers
Nuclear Instruments and Methods in Physics Research: Section B 256(2007) 281-287
Parkinson P, Lloyd-Hughes J, Gao Q, Tan H, Jagadish C, Johnston M, Herz L
Transient Terahertz Conductivity of GaAs Nanowires
Nano Letters 7, 7(2007) 2162-2165
Transient Terahertz Conductivity of GaAs Nanowires
Nano Letters 7, 7(2007) 2162-2165
Parkinson P, Lloyd-Hughes J, Gao Q, Tan H, Jagadish C, Johnston M, Herz L
Transient Terahertz Conductivity of GaAs Nanowires
Nano Letters 7, 7(2007) 2162-2165
Transient Terahertz Conductivity of GaAs Nanowires
Nano Letters 7, 7(2007) 2162-2165
Paladugu M, Zou J, Guo Y, Auchterlonie G, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
Small 3, 11(2007) 1873-1877
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
Small 3, 11(2007) 1873-1877
Song M, Kim Y, Jung J, Gao Q, Tan H, Jagadish C
Epitaxial Germanium Nanowires on GaAs Grown by Chemical Vapor Deposition
Journal of the Korean Physical Society 51, 1(2007) 120-124
Epitaxial Germanium Nanowires on GaAs Grown by Chemical Vapor Deposition
Journal of the Korean Physical Society 51, 1(2007) 120-124
Paladugu M, Zou J, Guo Y, Auchterlonie G, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
Small 3, 11(2007) 1873-1877
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
Small 3, 11(2007) 1873-1877
Paladugu M, Zou J, Auchterlonie G, Guo Y, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Evolution of InAs branches in InAs/GaAs nanowire heterostructures
Applied Physics Letters 91, 13(2007) 133115 1-3
Evolution of InAs branches in InAs/GaAs nanowire heterostructures
Applied Physics Letters 91, 13(2007) 133115 1-3
Mokkapati S, Tan H, Jagadish C
Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy
Applied Physics Letters 90(2007) 171104 1-3
Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy
Applied Physics Letters 90(2007) 171104 1-3
Mokkapati S, Du S, Buda M, Fu L, Tan H, Jagadish C
Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
Nanoscale Research Letters 2(2007) 550-553
Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
Nanoscale Research Letters 2(2007) 550-553
Mishra A, Titova L, Hoang T, Jackson H, Smith L, Yarrison-Rice J, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
Applied Physics Letters 91(2007) 263104 1-3
Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
Applied Physics Letters 91(2007) 263104 1-3
Matsik S, Rinzan M, Perera A, Tan H, Jagadish C, Liu H
Effects of a p-n junction on heterojunction far infrared detectors
Infrared Physics and Technology 50(2007) 274-278
Effects of a p-n junction on heterojunction far infrared detectors
Infrared Physics and Technology 50(2007) 274-278
Sears K, Tan H, Wong-Leung J, Jagadish C
The Role of Arsine in the Self-assembled Growth of InAs/GaAs Quantum Dots by Metal Organic Chemical Vapor Deposition
Journal of Applied Physics 99, 4(2006) 044908-1-5
The Role of Arsine in the Self-assembled Growth of InAs/GaAs Quantum Dots by Metal Organic Chemical Vapor Deposition
Journal of Applied Physics 99, 4(2006) 044908-1-5
Williams J, Conway M, Wong-Leung J
Nanocavities and nanoparticles formed in silicon by ion irradiation
Journal of Environmental Chemical Engineering 70, 6(2006) 881-884
Nanocavities and nanoparticles formed in silicon by ion irradiation
Journal of Environmental Chemical Engineering 70, 6(2006) 881-884
Titova L, Hoang T, Jackson H, Smith L, Yarrison-Rice J, Kim Y, Joyce H, Tan H, Jagadish C
Temperature Dependence of Photoluminescence from Single Core-shell GaAs-AlGaAs Nanowires
Applied Physics Letters 89, 17(2006) 173126-1-3
Temperature Dependence of Photoluminescence from Single Core-shell GaAs-AlGaAs Nanowires
Applied Physics Letters 89, 17(2006) 173126-1-3
Tan H, Sears K, Mokkapati S, Fu L, Kim Y, McGowan P, Buda M, Jagadish C
Quantum Dots and Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 12, 6(2006) 1242-1254
Quantum Dots and Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 12, 6(2006) 1242-1254
Sears K, Wong-Leung J, Tan H, Jagadish C
A Transmission Electron Microscopy Study of Defects formed through the Capping Layer of Self-assembled InAs/GaAs Quantum Dot Samples
Journal of Applied Physics 99, 11(2006) 113503-1-8
A Transmission Electron Microscopy Study of Defects formed through the Capping Layer of Self-assembled InAs/GaAs Quantum Dot Samples
Journal of Applied Physics 99, 11(2006) 113503-1-8
Vora K
AFM-measured surface roughness of SU-8 structures produced by deep x-ray lithography
Journal of Micromechanics and Microengineering 16, 10(2006) 1975-1983
AFM-measured surface roughness of SU-8 structures produced by deep x-ray lithography
Journal of Micromechanics and Microengineering 16, 10(2006) 1975-1983
Sears K, Buda M, Tan H, Jagadish C
Modeling and Characterization of InAs/GaAs Quantum Dot Lasers grown using Metal Organic Chemical Vapor Deposition
Journal of Applied Physics 101, 1(2006) 013112-1-9
Modeling and Characterization of InAs/GaAs Quantum Dot Lasers grown using Metal Organic Chemical Vapor Deposition
Journal of Applied Physics 101, 1(2006) 013112-1-9
Gareso P, Buda M, Petravic M, Tan H, Jagadish C
Effect of Rapid Thermal Annealing on the Atomic Intermixing of Zn- and C-Doped InGaAs/AlGaAs Quantum Well Laser Structures
Journal of the Electrochemical Society 153, 9(2006) G879-G882
Effect of Rapid Thermal Annealing on the Atomic Intermixing of Zn- and C-Doped InGaAs/AlGaAs Quantum Well Laser Structures
Journal of the Electrochemical Society 153, 9(2006) G879-G882
Huang S, Chen Z, Wang F, Shen S, Tan H, Fu L, Fraser M, Jagadish C
Carrier Transfer and Magneto-transport in Single Modulation-doped V-grooved Quantum Wire modified by Ion Implantation
Journal of Luminescence 119-120(2006) 198-203
Carrier Transfer and Magneto-transport in Single Modulation-doped V-grooved Quantum Wire modified by Ion Implantation
Journal of Luminescence 119-120(2006) 198-203
Huang S, Chen Z, Bai L, Chen X, Tan H, Fu L, Fraser M, Jagadish C
Micro-photoluminescence Confocal Mapping of Single V-grooved GaAs Quantum Wire
Chinese Physics Letters 23, 12(2006) 3341-3344
Micro-photoluminescence Confocal Mapping of Single V-grooved GaAs Quantum Wire
Chinese Physics Letters 23, 12(2006) 3341-3344
Harding R, Davies G, Tan J, Coleman P, Burrows C, Wong-Leung J
Identification by Photoluminescence and Positron Annihilation of Vacancy and Interstitial Instrinsic Defects in Ion-implanted Silicon
Journal of Applied Physics 100(2006) 073501-1-4
Identification by Photoluminescence and Positron Annihilation of Vacancy and Interstitial Instrinsic Defects in Ion-implanted Silicon
Journal of Applied Physics 100(2006) 073501-1-4
Harding R, Davies G, Hayama S, Coleman P, Burrows C, Wong-Leung J
Photoluminescence Response of Ion-implanted Silicon
Applied Physics Letters 89, 18(2006) 181917-1-3
Photoluminescence Response of Ion-implanted Silicon
Applied Physics Letters 89, 18(2006) 181917-1-3
Guo Y, Zou J, Paladugu M, Wang H, Gao Q, Tan H, Jagadish C
Structural characteristics of GaSb/GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition
Applied Physics Letters 89, 23(2006) 231917-1-3
Structural characteristics of GaSb/GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition
Applied Physics Letters 89, 23(2006) 231917-1-3
Guo Y, Zou J, Paladugu M, Wang H, Gao Q, Tan H, Jagadish C
Structural characteristics of GaSb/GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition
Applied Physics Letters 89, 23(2006) 231917-1-3
Structural characteristics of GaSb/GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition
Applied Physics Letters 89, 23(2006) 231917-1-3
Gareso P, Buda M, Tan H, Jagadish C, Ilyas S, Gal M
On Quantifying the Group-V to Group-III Interdiffusion Rates in InxGa1-xAs/InP Quantum Wells
Semiconductor Science and Technology 21(2006) 829-832
On Quantifying the Group-V to Group-III Interdiffusion Rates in InxGa1-xAs/InP Quantum Wells
Semiconductor Science and Technology 21(2006) 829-832
Gareso P, Buda M, Fu L, Tan H, Jagadish C, Dao L, Wen X, Hannaford P
Proton Irradiation-induced Intermixing in InxGa1-xAs/InP Quantum Wells - the Effect of In Composition
Semiconductor Science and Technology 21(2006) 1441-1446
Proton Irradiation-induced Intermixing in InxGa1-xAs/InP Quantum Wells - the Effect of In Composition
Semiconductor Science and Technology 21(2006) 1441-1446
Laird J, Jagadish C, Jamieson D, Legge G
Scanning Ion Deep Level Transient Spectroscopy: II. Ion Irradiated Au-Si Schottky Junctions
Journal of Physics D: Applied Physics 39(2006) 1352-1362
Scanning Ion Deep Level Transient Spectroscopy: II. Ion Irradiated Au-Si Schottky Junctions
Journal of Physics D: Applied Physics 39(2006) 1352-1362
Fu L, Tan H, McKerracher I, Wong-Leung J, Jagadish C, Vukmirovic N, Harrison P
Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors
Journal of Applied Physics 99, 11(2006) 114517-1-8
Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors
Journal of Applied Physics 99, 11(2006) 114517-1-8
Drozdowicz-Tomsia K, Goldys E, Fu L, Jagadish C
Doping Effect on Dark Currents in In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-organic Chemical Vapor Deposition
Applied Physics Letters 89, 11(2006) 113510-1-3
Doping Effect on Dark Currents in In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-organic Chemical Vapor Deposition
Applied Physics Letters 89, 11(2006) 113510-1-3
Davis J, Dao L, Wen X, Hannaford P, Coleman V, Tan H, Jagadish C, Koike K, Sasa S, Inoue M, Yano M
Observation of Coherent Biexcitons in ZnO/ZnMgO Multiple Quantum Wells at Room Temperature
Applied Physics Letters 89, 18(2006) 182109-1-3
Observation of Coherent Biexcitons in ZnO/ZnMgO Multiple Quantum Wells at Room Temperature
Applied Physics Letters 89, 18(2006) 182109-1-3
Coleman V, Buda M, Tan H, Jagadish C, Phillips M, Koike K, Sasa S, Inoue M, Yano M
Observation of Blue Shifts in ZnO/ZnMgO Multiple Quantum Well Structures by Ion-implantation Induced Intermixing
Semiconductor Science and Technology 21(2006) L25-L28
Observation of Blue Shifts in ZnO/ZnMgO Multiple Quantum Well Structures by Ion-implantation Induced Intermixing
Semiconductor Science and Technology 21(2006) L25-L28
Coleman V, Bradby J, Jagadish C, Phillips M
Observation of Enhanced Defect Emission and Excitonic Quenching from spherically Indented ZnO
Applied Physics Letters 89, 8(2006) 082102-1-3
Observation of Enhanced Defect Emission and Excitonic Quenching from spherically Indented ZnO
Applied Physics Letters 89, 8(2006) 082102-1-3
Barik S, Tan H, Jagadish C, Vukmirovic N, Harrison P
Selective Wavelength Tuning of Self-assembled InAs Quantum Dots grown on InP
Applied Physics Letters 88, 19(2006) 193112-1-3
Selective Wavelength Tuning of Self-assembled InAs Quantum Dots grown on InP
Applied Physics Letters 88, 19(2006) 193112-1-3
Barik S, Tan H, Jagadish C
Comparison of InAs Quantum Dots Grown on GaInAsP and InP
Nanotechnology 17(2006) 1867-1870
Comparison of InAs Quantum Dots Grown on GaInAsP and InP
Nanotechnology 17(2006) 1867-1870
Barik S, Tan H, Jagadish C
Proton Implantation-induced Intermixing of InAs/InP Quantum Dots
Applied Physics Letters 88, 22(2006) 223101-1-3
Proton Implantation-induced Intermixing of InAs/InP Quantum Dots
Applied Physics Letters 88, 22(2006) 223101-1-3
Siegert J, Marcinkevicius S, Fu L, Jagadish C
Recombination Properties of Si-doped InGaAs/GaAs Quantum Dots
Nanotechnology 17(2006) 5373-5377
Recombination Properties of Si-doped InGaAs/GaAs Quantum Dots
Nanotechnology 17(2006) 5373-5377
Kim Y, Joyce H, Gao Q, Tan H, Jagadish C, Paladugu M, Zou J, Suvorova A
Influence of Nanowire Density on the Shape and Optical Properties of Ternary InGaAs Nanowires
Nano Letters 6, 4(2006) 599-604
Influence of Nanowire Density on the Shape and Optical Properties of Ternary InGaAs Nanowires
Nano Letters 6, 4(2006) 599-604
Laird J, Jagadish C, Jamieson D, Legge G
Scanning Ion Deep Level Transient Spectroscopy: I. Theory
Journal of Physics D: Applied Physics 39(2006) 1342-1351
Scanning Ion Deep Level Transient Spectroscopy: I. Theory
Journal of Physics D: Applied Physics 39(2006) 1342-1351
Linnarsson M, Janson M, Nordell N, Wong-Leung J, Schoner A
Formation of Precipitates in Heavily Boron Doped 4H-SiC
Applied Surface Science 252(2006) 5316-5320
Formation of Precipitates in Heavily Boron Doped 4H-SiC
Applied Surface Science 252(2006) 5316-5320
Lloyd-Hughes J, Merchant S, Fu L, Tan H, Jagadish C, Castro-Camus E, Johnston M
Influence of Surface Passivation on Ultrafast Carrier Dynamics and Terahertz Radiation Generation in GaAs
Applied Physics Letters 89, 23(2006) 232201-1-3
Influence of Surface Passivation on Ultrafast Carrier Dynamics and Terahertz Radiation Generation in GaAs
Applied Physics Letters 89, 23(2006) 232201-1-3
Petravic M, Deenapanray P, Coleman V, Jagadish C, Kim K, Kim B, Koike K, Sasa S, Inoue M, Yano M
Chemical States of Nitrogen in ZnO Studied by near-edge X-ray Absorption Fine Structure and Core-level Photoemission Spectroscopies
Surface Science 600(2006) L81-L85
Chemical States of Nitrogen in ZnO Studied by near-edge X-ray Absorption Fine Structure and Core-level Photoemission Spectroscopies
Surface Science 600(2006) L81-L85
Mokkapati S, Tan H, Jagadish C
Integration of an InGaAs Quantum-Dot Laser with a Low-Loss Passive Waveguide using Selective-Area Epitaxy
IEEE Photonics Technology Letters 18, 15(2006) 1648-1650
Integration of an InGaAs Quantum-Dot Laser with a Low-Loss Passive Waveguide using Selective-Area Epitaxy
IEEE Photonics Technology Letters 18, 15(2006) 1648-1650
Mokkapati S, Buda M, Tan H, Jagadish C
Effect of Auger Recombination on the Performance of p-doped Quantum Dot Lasers
Applied Physics Letters 88(2006) 161121-1-3
Effect of Auger Recombination on the Performance of p-doped Quantum Dot Lasers
Applied Physics Letters 88(2006) 161121-1-3
Vora K
Optimisation of SU-8 processing parameters for deep X-ray lithography
Microsystem Technologies 11, 4-5(2005) 303-310
Optimisation of SU-8 processing parameters for deep X-ray lithography
Microsystem Technologies 11, 4-5(2005) 303-310
Jagadish C, Fu L
InGaP/GaAs negative differential resistance heterojunction bipolar transistor with a new structure
Journal of Environmental Chemical Engineering 26, 9(2005) 1783-1788
InGaP/GaAs negative differential resistance heterojunction bipolar transistor with a new structure
Journal of Environmental Chemical Engineering 26, 9(2005) 1783-1788
Vora K
Overcoming SU-8 stiction in high aspect ratio structures
Microsystem Technologies 11, 2-3(2005) 221-224
Overcoming SU-8 stiction in high aspect ratio structures
Microsystem Technologies 11, 2-3(2005) 221-224
Vora K
Specification of mechanical support structures to prevent SU-8 stiction in high aspect ratio structures
Journal of Micromechanics and Microengineering 15, 5(2005) 978-983
Specification of mechanical support structures to prevent SU-8 stiction in high aspect ratio structures
Journal of Micromechanics and Microengineering 15, 5(2005) 978-983
Buda M, Jagadish C
Computation of the Modal Reflectivity for a Partially Etched Mirror: Application for Integration of a Laser Diode and a Waveguide
Applied Optics 44, 6(2005) 1039-1050
Computation of the Modal Reflectivity for a Partially Etched Mirror: Application for Integration of a Laser Diode and a Waveguide
Applied Optics 44, 6(2005) 1039-1050
Castro-Camus E, Lloyd-Hughes J, Johnston M, Fraser M, Tan H, Jagadish C
Polarization-Sensitive Terahertz Detection by Multicontact Photoconductive Receivers
Applied Physics Letters 86, 25(2005) 254102-1-3
Polarization-Sensitive Terahertz Detection by Multicontact Photoconductive Receivers
Applied Physics Letters 86, 25(2005) 254102-1-3
Deenapanray P, Petravic M, Jagadish C, Krispin M, Auret F
Electrical Characterization of p-GaAs Epilayers Disordered by Doped Spin-On-Glass
Journal of Applied Physics 97, 3(2005) 033524-1-7
Electrical Characterization of p-GaAs Epilayers Disordered by Doped Spin-On-Glass
Journal of Applied Physics 97, 3(2005) 033524-1-7
Coleman V, Tan H, Jagadish C, Kucheyev S, Zou J
Thermal Stability of Ion-Implanted ZnO
Applied Physics Letters 87, 23(2005) 231912-1-3
Thermal Stability of Ion-Implanted ZnO
Applied Physics Letters 87, 23(2005) 231912-1-3
Fu L, McGowan P, Sears K, Tan H, Jagadish C
In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition
IEEE Electron Device Letters 26, 9(2005) 628-630
In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition
IEEE Electron Device Letters 26, 9(2005) 628-630
Fu L, McGowan P, Tan H, Jagadish C, Reece P, Gal M
Study of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration
IEE Proceedings - Circuits, Devices and Systems 152, 5(2005) 491-496
Study of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration
IEE Proceedings - Circuits, Devices and Systems 152, 5(2005) 491-496
Gao Q, Buda M, Tan H, Jagadish C
Room-Temperature Preperation of InGaAsN Quantum Dot Lasers Grown by MOCVD
Electrochemical and Solid-State Letters 8, 2(2005) G57-G59
Room-Temperature Preperation of InGaAsN Quantum Dot Lasers Grown by MOCVD
Electrochemical and Solid-State Letters 8, 2(2005) G57-G59
Mokkapati S, McGowan P, Tan H, Jagadish C, McBean K, Phillips M
Controlling the Properties of InGaAs Quantum Dots by Selective-Area Epitaxy
Applied Physics Letters 86, 11(2005) 113102-1-3
Controlling the Properties of InGaAs Quantum Dots by Selective-Area Epitaxy
Applied Physics Letters 86, 11(2005) 113102-1-3
Slotte J, Saarinen K, Janson M, Hallen A, Kuznetsov A, Svensson B, Wong-Leung J, Jagadish C
Fluence, Flux and Implantation Temperature Dependence of Ion-Implantation-Induced Defect Production in 4H-SiC
Journal of Applied Physics 97, 3(2005) 033513-1-7
Fluence, Flux and Implantation Temperature Dependence of Ion-Implantation-Induced Defect Production in 4H-SiC
Journal of Applied Physics 97, 3(2005) 033513-1-7
Sears K, Wong-Leung J, Tan H, Jagadish C
InAs Quantum Dots Grown on InGaAs Buffer Layers by Metal-Organic Chemical Vapor Deposition
Journal of Crystal Growth 281(2005) 290-296
InAs Quantum Dots Grown on InGaAs Buffer Layers by Metal-Organic Chemical Vapor Deposition
Journal of Crystal Growth 281(2005) 290-296
Tan H, McGowan P, Jagadish C
Growth of Highly Strained InGaAs Quantum Wells on GaAs Substrates - Effect of Growth Rate
Journal of Crystal Growth 274(2005) 85-89
Growth of Highly Strained InGaAs Quantum Wells on GaAs Substrates - Effect of Growth Rate
Journal of Crystal Growth 274(2005) 85-89
Williams J, Kucheyev S, Tan H, Wong-Leung J, Jagadish C
Ion Irradiation-induced Disordering of Semiconductors: Defect Structures and Applications
Philosophical Magazine 85, 4-7(2005) 677-687
Ion Irradiation-induced Disordering of Semiconductors: Defect Structures and Applications
Philosophical Magazine 85, 4-7(2005) 677-687
Wong-Leung J, Linnarsson M, Svensson B, Cockayne D
Ion-Implantation-Induced Extended Defect Formation in (0001) and (1120) 4H-SiC
Physical Review B: Condensed Matter and Materials 71, 16(2005) 165210-1-13
Ion-Implantation-Induced Extended Defect Formation in (0001) and (1120) 4H-SiC
Physical Review B: Condensed Matter and Materials 71, 16(2005) 165210-1-13
Coleman V, Bradby J, Jagadish C, Munroe P, Heo Y, Pearton S, Norton D, Inoue M, Yano M
Mechanical Properties of ZnO Epitaxial Layers Grown on a- and c-axis Sapphire
Applied Physics Letters 86, 20(2005) 203105-1-3
Mechanical Properties of ZnO Epitaxial Layers Grown on a- and c-axis Sapphire
Applied Physics Letters 86, 20(2005) 203105-1-3
Bogaart E, Haverkort J, Mano T, Notzel R, Wolter J, McGowan P, Tan H, Jagadish C
Picosecond Time-Resolved Bleaching Dynamics of Self-Assembled Quantum Dots
IEEE Transactions on Nanotechnology 3, 3(2004) 348-352
Picosecond Time-Resolved Bleaching Dynamics of Self-Assembled Quantum Dots
IEEE Transactions on Nanotechnology 3, 3(2004) 348-352
Fraser M, Jagadish C
Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
Physical Review B: Condensed Matter and Materials 70, 23(2004) 1-6
Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
Physical Review B: Condensed Matter and Materials 70, 23(2004) 1-6
Kucheyev S, Williams J, Jagadish C
Ion-Beam-Defect Processes in Group-III Nitrides and ZnO
Vacuum 73(2004) 93-104
Ion-Beam-Defect Processes in Group-III Nitrides and ZnO
Vacuum 73(2004) 93-104
Carmody C, Tan H, Jagadish C, Douheret O, Maknys K, Anand S, Zou J, Dao L, Gal M
Structural, Electrical, and Optical Analysis of Ion Implanted Semi-insulating InP
Journal of Applied Physics 95, 2(2004) 477-482
Structural, Electrical, and Optical Analysis of Ion Implanted Semi-insulating InP
Journal of Applied Physics 95, 2(2004) 477-482
Coelho A, Boudinov H, Lippen T, Tan H, Jagadish C
Implant Isolation of AlGaAs Multilayer DBR
Nuclear Instruments and Methods in Physics Research: Section B 218(2004) 381-385
Implant Isolation of AlGaAs Multilayer DBR
Nuclear Instruments and Methods in Physics Research: Section B 218(2004) 381-385
Gao Q, Tan H, Fu L, Jagadish C
Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots
Applied Physics Letters 84, 24(2004) 4950-4952
Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots
Applied Physics Letters 84, 24(2004) 4950-4952
Gao Q, Tan H, Jagadish C, Sun B, Gal M, Ouyang L, Zou J
Metalorganic Chemical Vapor Deposition of GaAsN Epilayers: Microstructures and Optical Properties
Journal of Crystal Growth 264(2004) 92-97
Metalorganic Chemical Vapor Deposition of GaAsN Epilayers: Microstructures and Optical Properties
Journal of Crystal Growth 264(2004) 92-97
Gao Q, Tan H, Jagadish C, Sun B, Gal M, Ouyang L, Zou J
Enhanced Optical Properties of the GaAsN/GaAs Quantum-Well Structure by the Insertion of InAs Monolayers
Applied Physics Letters 84, 14(2004) 2536-2538
Enhanced Optical Properties of the GaAsN/GaAs Quantum-Well Structure by the Insertion of InAs Monolayers
Applied Physics Letters 84, 14(2004) 2536-2538
Gareso P, Buda M, Fu L, Tan H, Jagadish C
Supression of Thermal Atomic Interdiffusion in C-doped InGaAs/AIGaAs Quantum Well Laser Structures using TiO2 Dielectric Layers
Applied Physics Letters 85, 23(2004) 5583-5585
Supression of Thermal Atomic Interdiffusion in C-doped InGaAs/AIGaAs Quantum Well Laser Structures using TiO2 Dielectric Layers
Applied Physics Letters 85, 23(2004) 5583-5585
Kucheyev S, Timmers H, Zou J, Williams J, Jagadish C, Li G
Lattice Damage Produced in GaN by Swift Heavy Ions
Journal of Applied Physics 95, 10(2004) 5360-5365
Lattice Damage Produced in GaN by Swift Heavy Ions
Journal of Applied Physics 95, 10(2004) 5360-5365
Kucheyev S, Williams J, Zou J, Jagadish C
Dynamic Annealing in III-Nitrides Under Ion Bombardment
Journal of Applied Physics 95, 6(2004) 3048-3054
Dynamic Annealing in III-Nitrides Under Ion Bombardment
Journal of Applied Physics 95, 6(2004) 3048-3054
McGowan P, Buda M, Tan H, Jagadish C
Characteristics of MOCVD-Grown Thin p-Clad InGaAs Quantum-Dot Lasers
IEEE Photonics Technology Letters 16, 12(2004) 2589-2591
Characteristics of MOCVD-Grown Thin p-Clad InGaAs Quantum-Dot Lasers
IEEE Photonics Technology Letters 16, 12(2004) 2589-2591
McGowan P, Buda M, Tan H, Jagadish C
Investigation of the Blueshift in Electroluminescence Spectra from MOCVD Grown InGaAs Quantum Dots
IEEE Journal of Quantum Electronics 40, 10(2004) 1410-1416
Investigation of the Blueshift in Electroluminescence Spectra from MOCVD Grown InGaAs Quantum Dots
IEEE Journal of Quantum Electronics 40, 10(2004) 1410-1416
McGowan P, Tan H, Jagadish C
Impurity Free Vacancy Disordering of InGaAs Quantum Dots
Journal of Applied Physics 96, 12(2004) 7544-7548
Impurity Free Vacancy Disordering of InGaAs Quantum Dots
Journal of Applied Physics 96, 12(2004) 7544-7548
McGowan P, Tan H, Jagadish C
InGaAs Quantum Dots Grown with GaP Strain Compensation Layers
Journal of Applied Physics 95, 10(2004) 5710-5714
InGaAs Quantum Dots Grown with GaP Strain Compensation Layers
Journal of Applied Physics 95, 10(2004) 5710-5714
Li X, Li N, Demiguel S, Zheng X, Campbell J, Tan H, Jagadish C
A Partially Depleted Absorber Photodiode with Graded Doping Injection Regions
IEEE Photonics Technology Letters 16, 10(2004) 2326-2328
A Partially Depleted Absorber Photodiode with Graded Doping Injection Regions
IEEE Photonics Technology Letters 16, 10(2004) 2326-2328
Lloyd-Hughes J, Castro-Camus E, Fraser M, Jagadish C, Johnston M
Carrier Dynamics in Ion-Implanted GaAs Studied by Simulation and Observation of Terahertz Emission
Physical Review B: Condensed Matter and Materials 70(2004) 235330-1-6
Carrier Dynamics in Ion-Implanted GaAs Studied by Simulation and Observation of Terahertz Emission
Physical Review B: Condensed Matter and Materials 70(2004) 235330-1-6
Presenti G, Boudinov H, Carmody C, Jagadish C
Variable Temperature Hall-effect Measurements in Ion Bombarded InP
Nuclear Instruments and Methods in Physics Research: Section B 218(2004) 386-390
Variable Temperature Hall-effect Measurements in Ion Bombarded InP
Nuclear Instruments and Methods in Physics Research: Section B 218(2004) 386-390
Reece P, Gal M, Tan H, Jagadish C
Optical properties of erbium-implanted porous silicon microcavities
Applied Physics Letters 85, 16(2004) 3363-3365
Optical properties of erbium-implanted porous silicon microcavities
Applied Physics Letters 85, 16(2004) 3363-3365
Lederer M, Kolev V, Luther-Davies B, Tan H, Jagadish C
Passively mode-locked, self-frequency doubled, diode-pumped Yb:YAl3(BO3)4 laser
Journal of Environmental Chemical Engineering 71(2003) 158-160
Passively mode-locked, self-frequency doubled, diode-pumped Yb:YAl3(BO3)4 laser
Journal of Environmental Chemical Engineering 71(2003) 158-160
Wong-Leung J, Janson M, Svensson B
Effect of Crystal Orientation on the Implant Profile of 60keV Al into 4H-SiC Crystals
Journal of Applied Physics 93, 11(2003) 8914-8917
Effect of Crystal Orientation on the Implant Profile of 60keV Al into 4H-SiC Crystals
Journal of Applied Physics 93, 11(2003) 8914-8917
Wong-Leung J, Linnarsson M, Svensson B
A Comparison of Extended Defect Formation Induced by Ion Implantation in (0001) and (1120)4H-SiC
Physica B 340-342(2003) 132-136
A Comparison of Extended Defect Formation Induced by Ion Implantation in (0001) and (1120)4H-SiC
Physica B 340-342(2003) 132-136
Kim S, Han I, Chung S, Jagadish C
Growth of Triangular Shaped InGaAs/GaAs Quantum Wire Structures
Journal of Materials Science Letters 22(2003) 467-469
Growth of Triangular Shaped InGaAs/GaAs Quantum Wire Structures
Journal of Materials Science Letters 22(2003) 467-469
Wang Y, Zou J, Kucheyev S, Williams J, Jagadish C, Li G
Nature of Planar Defects in Ion-implanted GaN
Electrochemical and Solid-State Letters 6, 3(2003) G34-G36
Nature of Planar Defects in Ion-implanted GaN
Electrochemical and Solid-State Letters 6, 3(2003) G34-G36
Fu L, McGowan P, Tan H, Jagadish C, Reece P, Gal M
Suppression of Interdiffusion in InGaAs/GaAs Quantum Dots using Dielectric Layer of Titanium Dioxide
Applied Physics Letters 82, 16(2003) 2613-2615
Suppression of Interdiffusion in InGaAs/GaAs Quantum Dots using Dielectric Layer of Titanium Dioxide
Applied Physics Letters 82, 16(2003) 2613-2615
Buda M, Hay J, Tan H, Fu L, Jagadish C, Reece P, Gal M
Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures
Journal of the Electrochemical Society 150, 8(2003) G481-G487
Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures
Journal of the Electrochemical Society 150, 8(2003) G481-G487
Buda M, Hay J, Tan H, Wong-Leung J, Jagadish C
Low Loss, Thin p-clad 980-nm InGaAs Semiconductor Laser Diodes with an Asymmetric Structure Design
IEEE Journal of Quantum Electronics 39, 5(2003) 625-633
Low Loss, Thin p-clad 980-nm InGaAs Semiconductor Laser Diodes with an Asymmetric Structure Design
IEEE Journal of Quantum Electronics 39, 5(2003) 625-633
Buda M, Tan H, Fu L, Josyula L, Jagadish C
Improvement of the Kink-free Operation in Ridge-waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge
IEEE Photonics Technology Letters 15, 12(2003) 1686-1688
Improvement of the Kink-free Operation in Ridge-waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge
IEEE Photonics Technology Letters 15, 12(2003) 1686-1688
Carmody C, Tan H, Jagadish C
Electrical Isolation of n- and p-In0.53Ga0.47As Epilayers using Ion Irradiation
Journal of Applied Physics 94, 10(2003) 6616-6620
Electrical Isolation of n- and p-In0.53Ga0.47As Epilayers using Ion Irradiation
Journal of Applied Physics 94, 10(2003) 6616-6620
Carmody C, Tan H, Jagadish C
Influence of Cap Layer on Implantation Induced Interdiffusion in InP/InGaAs Quantum Wells
Journal of Applied Physics 93, 8(2003) 4468-4470
Influence of Cap Layer on Implantation Induced Interdiffusion in InP/InGaAs Quantum Wells
Journal of Applied Physics 93, 8(2003) 4468-4470
Carmody C, Tan H, Jagadish C, Gaarder A, Marcinkevicius S
Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
Applied Physics Letters 82, 22(2003) 3913-3915
Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
Applied Physics Letters 82, 22(2003) 3913-3915
Carmody C, Tan H, Jagadish C, Gaarder A, Marcinkevicius S
Ultrafast carrier trapping and recombination in highly resistive ion implanted InP
Journal of Applied Physics 94, 2(2003) 1074-1078
Ultrafast carrier trapping and recombination in highly resistive ion implanted InP
Journal of Applied Physics 94, 2(2003) 1074-1078
Deenapanray P, Coleman V, Jagadish C
Electrical Characterization of Impurity-free Disordered p-type GaAs
Electrochemical and Solid-State Letters 6, 3(2003) G37-G40
Electrical Characterization of Impurity-free Disordered p-type GaAs
Electrochemical and Solid-State Letters 6, 3(2003) G37-G40
Deenapanray P, Gao Q, Jagadish C
Implant Isolation of Zn-doped GaAs Epilayers: Effects of Ion Species, Doping Concentration, and Implantation Temperature
Journal of Applied Physics 93, 11(2003) 9123-9129
Implant Isolation of Zn-doped GaAs Epilayers: Effects of Ion Species, Doping Concentration, and Implantation Temperature
Journal of Applied Physics 93, 11(2003) 9123-9129
Deenapanray P, Meyer W, Auret F, Krispin M, Jagadish C
Electron emission properties of a defect at ~(Ec?0.23eV) in impurity-free disorded n-GaAs
Physica B 340-342(2003) 315-319
Electron emission properties of a defect at ~(Ec?0.23eV) in impurity-free disorded n-GaAs
Physica B 340-342(2003) 315-319
Deenapanray P, Svensson B, Tan H, Jagadish C
A Comparison of Low-energy As Ion Implantation and Impurity-free Disordering Induced Defects in N-type GaAs Epitaxial Layers
Japanese Journal of Applied Physics 42, 3(2003) 1158-1163
A Comparison of Low-energy As Ion Implantation and Impurity-free Disordering Induced Defects in N-type GaAs Epitaxial Layers
Japanese Journal of Applied Physics 42, 3(2003) 1158-1163
Deenapanray P, Tan H, Jagadish C
Electrical Characterization of Impurity-free Disordering-induced Defects in n-GaAs using Native Oxide Layers
Applied Physics A: Materials Science and Processing 76(2003) 961-964
Electrical Characterization of Impurity-free Disordering-induced Defects in n-GaAs using Native Oxide Layers
Applied Physics A: Materials Science and Processing 76(2003) 961-964
Doshi S, Deenapanray P, Tan H, Jagadish C
Towards a Better Understanding of the Operative Mechanisms Underlying Impurity-free Disordering of GaAs: Effect of Stress
Journal of Vacuum Science and Technology B 21, 1(2003) 198-203
Towards a Better Understanding of the Operative Mechanisms Underlying Impurity-free Disordering of GaAs: Effect of Stress
Journal of Vacuum Science and Technology B 21, 1(2003) 198-203
Gao Q, Deenapanray P, Tan H, Jagadish C
Implantation-induced Electrical Isolation of GaAsN Epilayers Grown by Metalorganic Chemical Vapor Deposition
Applied Physics Letters 83, 16(2003) 3386-3388
Implantation-induced Electrical Isolation of GaAsN Epilayers Grown by Metalorganic Chemical Vapor Deposition
Applied Physics Letters 83, 16(2003) 3386-3388
Sears K, Buda M, Wong-Leung J, Fu L, Jagadish C, Stiff-Roberts A, Bhattacharya P
Influence of Rapid Thermal Annealing on a 30 Stack InAs/GaAs Quantum Dot Infrared Photodetector
Journal of Applied Physics 94, 8(2003) 5283-5289
Influence of Rapid Thermal Annealing on a 30 Stack InAs/GaAs Quantum Dot Infrared Photodetector
Journal of Applied Physics 94, 8(2003) 5283-5289
Gao Q, Tan H, Jagadish C, Deenapanray P
Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition
Japanese Journal of Applied Physics 42(2003) 6827-6832
Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition
Japanese Journal of Applied Physics 42(2003) 6827-6832
Harding R, Davies G, Coleman P, Burrows C, Wong-Leung J
Study of defects in ion-implanted silicon using photoluminescence and positron annihilation
Physica B 340-342(2003) 738-742
Study of defects in ion-implanted silicon using photoluminescence and positron annihilation
Physica B 340-342(2003) 738-742
Sun B, Gal M, Gao Q, Tan H, Jagadish C, Puzzer T, Ouyang L, Zou J
Epitaxially Grown GaAsN Random Laser
Journal of Applied Physics 93, 10(2003) 5855-5858
Epitaxially Grown GaAsN Random Laser
Journal of Applied Physics 93, 10(2003) 5855-5858
Ip K, Overberg M, Baik K, Wilson R, Kucheyev S, Williams J, Jagadish C, Ren F, Heo Y, Norton D, Zavada J, Pearton S
ICP Dry Etching of ZnO and Effects of Hydrogen
Solid-State Electronics 47(2003) 2289-2294
ICP Dry Etching of ZnO and Effects of Hydrogen
Solid-State Electronics 47(2003) 2289-2294
Ip K, Overberg M, Heo Y, Norton D, Pearton S, Stutz C, Kucheyev S, Jagadish C, Williams J, Luo B, Ren F, Look D, Zavada J
Hydrogen Incorporation, Diffusivity and Evolution in Bulk ZnO
Solid-State Electronics 47(2003) 2255-2259
Hydrogen Incorporation, Diffusivity and Evolution in Bulk ZnO
Solid-State Electronics 47(2003) 2255-2259
Kucheyev S, Jagadish C, Williams J, Deenapanray P, Yano M, Koike K, Sasa S, Inoue M, Ogata K
Implant Isolation of ZnO
Journal of Applied Physics 93, 5(2003) 2972-2976
Implant Isolation of ZnO
Journal of Applied Physics 93, 5(2003) 2972-2976
Kucheyev S, Williams J, Jagadish C, Zou J, Evans C, Nelson A, Hamza A
Ion-Beam-Produced Structural Defects in ZnO
Physical Review B 67, 9(2003) 094115-1-11
Ion-Beam-Produced Structural Defects in ZnO
Physical Review B 67, 9(2003) 094115-1-11
Kuznetsov A, Wong-Leung J, Hallen A, Jagadish C, Svensson B
Dynamic Annealing in Ion Implanted SiC: Flux versus Temperature Dependance
Journal of Applied Physics 94, 11(2003) 7112-7115
Dynamic Annealing in Ion Implanted SiC: Flux versus Temperature Dependance
Journal of Applied Physics 94, 11(2003) 7112-7115
Lay M, McCallum J, Jagadish C
Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon
Physica B 340-342(2003) 748-751
Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon
Physica B 340-342(2003) 748-751
Leveque P, Hallen A, Svensson B, Wong-Leung J, Jagadish C, Privitera V
Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon
European Physical Journal - Applied Physics 23(2003) 5-9
Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon
European Physical Journal - Applied Physics 23(2003) 5-9
Leveque P, Kortegaard-Nielsen H, Pellegrino P, Hallen A, Svensson B, Kuznetsov A, Wong-Leung J, Jagadish C, Privitera V
Vacancy and Interstitial Depth Profiles in Ion-implanted Silicon
Journal of Applied Physics 93, 2(2003) 871-877
Vacancy and Interstitial Depth Profiles in Ion-implanted Silicon
Journal of Applied Physics 93, 2(2003) 871-877
McGowan P, Tan H, Jagadish C, Reece P, Gal M
Proton-Irradiation-Induced Intermixing in InGaAs Quantum Dots
Applied Physics Letters 82(2003) 2053-2055
Proton-Irradiation-Induced Intermixing in InGaAs Quantum Dots
Applied Physics Letters 82(2003) 2053-2055
Li Z, Lu W, Liu Q, Chen X, Shen S, Fu Y, Willander M, Tan H, Jagadish C
Determination of Carrier-transfer Length from Side-wall Quantum Well to Quantum Wire by Micro-photoluminescence Scanning
Journal of Electronic Materials 32, 8(2003) 913-916
Determination of Carrier-transfer Length from Side-wall Quantum Well to Quantum Wire by Micro-photoluminescence Scanning
Journal of Electronic Materials 32, 8(2003) 913-916
Boudinov H, Coelho A, Tan H, Jagadish C
Characterization of Deep Level Traps Responsible for Isolation of Proton Implanted GaAs
Journal of Applied Physics 93, 6(2003) 3234-3238
Characterization of Deep Level Traps Responsible for Isolation of Proton Implanted GaAs
Journal of Applied Physics 93, 6(2003) 3234-3238
Linnarsson M, Zimmermann U, Wong-Leung J, Schoner A, Janson M, Jagadish C, Svensson B
Solubility Limits of Dopants in 4H-SiC
Applied Surface Science 203-204(2003) 427-432
Solubility Limits of Dopants in 4H-SiC
Applied Surface Science 203-204(2003) 427-432
Kucheyev S, Williams J, Jagadish C, Zou J, Li G
Blistering of H-implanted GaN
Journal of Applied Physics 91, 6(2002) 3928-3930
Blistering of H-implanted GaN
Journal of Applied Physics 91, 6(2002) 3928-3930
Kucheyev S, Bradby J, Williams J, Jagadish C, Swain M
Mechanical Deformation of Single-crystal ZnO
Applied Physics Letters 80, 6(2002) 956-958
Mechanical Deformation of Single-crystal ZnO
Applied Physics Letters 80, 6(2002) 956-958
Tan H, Jagadish C
Electrical isolation of Al xGa 1-xAs by ion irradiation
Applied Physics Letters 80, 2(2002) 264-266
Electrical isolation of Al xGa 1-xAs by ion irradiation
Applied Physics Letters 80, 2(2002) 264-266
Jagadish C, Svensson B, Wong-Leung J
"Response to "comment on 'Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation'" [Appl. Phys. Lett. 80, 1492 (2002)]"
Applied Physics Letters 80, 8(2002) 1494-1495
"Response to "comment on 'Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation'" [Appl. Phys. Lett. 80, 1492 (2002)]"
Applied Physics Letters 80, 8(2002) 1494-1495
Sun B, Gal M, Gao Q, Tan H, Jagadish C
On the Nature of Radiative Recombination in GaAsN
Applied Physics Letters 81, 23(2002) 4368-4370
On the Nature of Radiative Recombination in GaAsN
Applied Physics Letters 81, 23(2002) 4368-4370
Pellegrino P, Leveque P, Kortegaard-Nielsen H, Hallen A, Wong-Leung J, Jagadish C, Svensson B
Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon
Nuclear Instruments and Methods in Physics Research: Section B 186(2002) 334-338
Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon
Nuclear Instruments and Methods in Physics Research: Section B 186(2002) 334-338
Monakhov E, Wong-Leung J, Kuznetsov A, Jagadish C, Svensson B
Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation
Physical Review B 65(2002) 245201-1-9
Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation
Physical Review B 65(2002) 245201-1-9
Lippen T, Boudinov H, Tan H, Jagadish C
Electrical Isolation of AlxGa1-xAs by Ion Irradiation
Applied Physics Letters 80(2002) 264-266
Electrical Isolation of AlxGa1-xAs by Ion Irradiation
Applied Physics Letters 80(2002) 264-266
Lederer M, Hildebrandt M, Kolev V, Luther-Davies B, Taylor B, Dawes J, Dekker P, Piper J, Tan H, Jagadish C
Passive Mode Locking of a Self-frequency-doubling Yb:Yal3 (BO3)4 Laser
Optics Letters 27, 6(2002) 436-438
Passive Mode Locking of a Self-frequency-doubling Yb:Yal3 (BO3)4 Laser
Optics Letters 27, 6(2002) 436-438
Kucheyev S, Williams J, Zou J, Li G, Jagadish C, Titov A
Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 782-786
Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 782-786
Kucheyev S, Williams J, Zou J, Jagadish C, Pophristic M, Guo S, Ferguson I, Manasreh M
Ion-beam-produced Damage and its Stability in AIN Films
Journal of Applied Physics 92, 7(2002) 3554-3558
Ion-beam-produced Damage and its Stability in AIN Films
Journal of Applied Physics 92, 7(2002) 3554-3558
Kucheyev S, Williams J, Zou J, Li G, Jagadish C, Manasreh M, Pophristic M, Guo S, Ferguson I
Structural Disorder in Ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5(2002) 787-789
Structural Disorder in Ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5(2002) 787-789
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C, Li G
Chemical Origin of the Yellow Luminescence in GaN
Journal of Applied Physics 91, 9(2002) 5857-5874
Chemical Origin of the Yellow Luminescence in GaN
Journal of Applied Physics 91, 9(2002) 5857-5874
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C, Li G
X-ray Spectrometry Investigation of Electrical Isolation in GaN
Journal of Applied Physics 91, 6(2002) 3940-3942
X-ray Spectrometry Investigation of Electrical Isolation in GaN
Journal of Applied Physics 91, 6(2002) 3940-3942
Kucheyev S, Deenapanray P, Jagadish C, Williams J, Yano M, Koike K, Sasa S, Inoue M, Ogata K
Electrical Isolation of ZnO by Ion Bombardment
Applied Physics Letters 81, 18(2002) 3350-3352
Electrical Isolation of ZnO by Ion Bombardment
Applied Physics Letters 81, 18(2002) 3350-3352
Kucheyev S, Boudinov H, Williams J, Jagadish C, Li G
Effect of Irradiation Temperature and Ion Flux on Electrical Isolation of GaN
Journal of Applied Physics 91, 7(2002) 4117-4120
Effect of Irradiation Temperature and Ion Flux on Electrical Isolation of GaN
Journal of Applied Physics 91, 7(2002) 4117-4120
Ip K, Overberg M, Heo Y, Norton D, Pearton S, Kucheyev S, Jagadish C, Williams J, Wilson R, Zavada J
Thermal Stability of Ion-implanted Hydrogen in ZnO
Applied Physics Letters 81, 21(2002) 3996-3998
Thermal Stability of Ion-implanted Hydrogen in ZnO
Applied Physics Letters 81, 21(2002) 3996-3998
Bradby J, Kucheyev S, Williams J, Wong-Leung J, Swain M, Munroe P, Li G, Phillips M
Indentation-induced Damage in GaN Epilayers
Applied Physics Letters 80, 3(2002) 383-385
Indentation-induced Damage in GaN Epilayers
Applied Physics Letters 80, 3(2002) 383-385
Bradby J, Kucheyev S, Williams J, Jagadish C, Swain M, Munroe P, Phillips M
Contact-induced Defect Propagation in ZnO
Applied Physics Letters 80, 24(2002) 4537-4539
Contact-induced Defect Propagation in ZnO
Applied Physics Letters 80, 24(2002) 4537-4539
Bradby J, Williams J, Wong-Leung J, Kucheyev S, Swain M, Munroe P
Spherical Indentation of Compound Semiconductors
Philosophical Magazine A 82, 10(2002) 1931-1939
Spherical Indentation of Compound Semiconductors
Philosophical Magazine A 82, 10(2002) 1931-1939
Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Nanoindentation-induced Deformation of Ge
Applied Physics Letters 80, 15(2002) 2651-2653
Nanoindentation-induced Deformation of Ge
Applied Physics Letters 80, 15(2002) 2651-2653
Carmody C, Boudinov H, Tan H, Jagadish C, Lederer M, Kolev V, Luther-Davies B, Dao L, Gal M
Ultrafast Trapping Times in Ion Implanted InP
Journal of Applied Physics 92, 5(2002) 2420-2423
Ultrafast Trapping Times in Ion Implanted InP
Journal of Applied Physics 92, 5(2002) 2420-2423
Davies G, Harding R, Jin T, Mainwood A, Wong-Leung J
Optical Studies of Ion-Implantation Centres in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 186(2002) 1-9
Optical Studies of Ion-Implantation Centres in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 186(2002) 1-9
Deenapanray P, Gong B, Lamb R, Martin A, Fu L, Tan H, Jagadish C
Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers
Applied Physics Letters 80, 23(2002) 4351-4353
Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers
Applied Physics Letters 80, 23(2002) 4351-4353
Deenapanray P, Martin A, Doshi S, Tan H, Jagadish C
Atomic Relocation Processes in Impurity-Free Disordered p-GaAs Epilayers Studied by Deep Level Transient Spectroscopy
Applied Physics Letters 81, 19(2002) 3573-3575
Atomic Relocation Processes in Impurity-Free Disordered p-GaAs Epilayers Studied by Deep Level Transient Spectroscopy
Applied Physics Letters 81, 19(2002) 3573-3575
Deenapanray P, Martin A, McGowan P, Jagadish C
On the Pulsed Anodic Oxidation of n+-InP
Electrochemical and Solid-State Letters 5, 6(2002) G41-G44
On the Pulsed Anodic Oxidation of n+-InP
Electrochemical and Solid-State Letters 5, 6(2002) G41-G44
Fu L, Heijden R, Tan H, Jagadish C, Dao L, Gal M
Study of Intermixing in a GaAs/AlGaAs Quantum-well Structure using Dope Spin-on Silica Layers
Applied Physics Letters 80, 7(2002) 1171-1173
Study of Intermixing in a GaAs/AlGaAs Quantum-well Structure using Dope Spin-on Silica Layers
Applied Physics Letters 80, 7(2002) 1171-1173
Fu L, Wong-Leung J, Deenapanray P, Tan H, Jagadish C, Gong B, Lamb R, Cohen R, Reichert W, Dao L, Gal M
Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide
Journal of Applied Physics 92, 7(2002) 3579-3583
Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide
Journal of Applied Physics 92, 7(2002) 3579-3583
Gal M, Dao L, Kraft E, Johnston M, Carmody C, Tan H, Jagadish C
Thermally Stimulated Luminescence in Ion-Implanted GaAs
Journal of Luminescence 96(2002) 287-293
Thermally Stimulated Luminescence in Ion-Implanted GaAs
Journal of Luminescence 96(2002) 287-293
Williams J, Jagadish C, Li G
Structural disorder in ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5(2002) 787-789
Structural disorder in ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5(2002) 787-789
Tan H, Jagadish C
Application of Selective Implantation in Al 0.5Ga 0.5As/In 0.25Ga 0.75As/GaAs Pseudomorphic Single Quantum Wire Structures
Journal of Nanoscience and Nanotechnology 1, 4(2001) 389-392
Application of Selective Implantation in Al 0.5Ga 0.5As/In 0.25Ga 0.75As/GaAs Pseudomorphic Single Quantum Wire Structures
Journal of Nanoscience and Nanotechnology 1, 4(2001) 389-392
Tan H, Jagadish C
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4(2001) 2351-2356
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4(2001) 2351-2356
Deenapanray P, Martin A, Jagadish C
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16(2001) 2561-2563
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16(2001) 2561-2563
Deenapanray P, Jagadish C
Impurity-free intermixing of GaAs/AIGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5(2001) 1962-1966
Impurity-free intermixing of GaAs/AIGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5(2001) 1962-1966
Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Mechanical Deformation in Silicon by Micro-indentation
Journal of Materials Research 16, 5(2001) 1500-1507
Mechanical Deformation in Silicon by Micro-indentation
Journal of Materials Research 16, 5(2001) 1500-1507
Bradby J, Williams J, Wong-Leung J, Swain M
Mechanical deformation of crystalline silicon during nanoindentation
Materials Research Society Symposium Proceedings 649(2001) Q8.10.1-Q8.10.6
Mechanical deformation of crystalline silicon during nanoindentation
Materials Research Society Symposium Proceedings 649(2001) Q8.10.1-Q8.10.6
Bradby J, Williams J, Jagadish C, Swain M, Phillips M
Mechanical properties of As-grown and ion-beam-modified GaN films
Materials Research Society Symposium Proceedings 649(2001) Q5.5.1-Q5.5.6
Mechanical properties of As-grown and ion-beam-modified GaN films
Materials Research Society Symposium Proceedings 649(2001) Q5.5.1-Q5.5.6
Boudinov H, Kucheyev S, Williams J, Jagadish C, Li G
Electrical isolation of GaN by MeV ion irradiation
Applied Physics Letters 78, 7(2001) 943-945
Electrical isolation of GaN by MeV ion irradiation
Applied Physics Letters 78, 7(2001) 943-945
Boudinov H, de Souza J, Jagadish C
Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 235-240
Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 235-240
Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Mechanical Deformation of InP and GaAs by Spherical Indentation
Applied Physics Letters 78, 21(2001) 3235-3237
Mechanical Deformation of InP and GaAs by Spherical Indentation
Applied Physics Letters 78, 21(2001) 3235-3237
Williams J, Ridgway M, Conway M, Wong-Leung J, Williams B, Petravic M
Interactions of point defects and impurities with open volume defects in silicon
Materials Research Society Symposium Proceedings 647(2001) O2.4.1-O2.4.11
Interactions of point defects and impurities with open volume defects in silicon
Materials Research Society Symposium Proceedings 647(2001) O2.4.1-O2.4.11
Liu Q, Sasaki A, Ohno N, Li Z, Lu W, Shen S, Fu Y, Willander M, Tan H, Jagadish C
Evidence of Blocking Effect on Carrier Trapping Process by Necking Region in a Very Narrow AIGaAs/GaAs V-grooved Quantum Wire Structure
Journal of Applied Physics 90, 10(2001) 5438-5440
Evidence of Blocking Effect on Carrier Trapping Process by Necking Region in a Very Narrow AIGaAs/GaAs V-grooved Quantum Wire Structure
Journal of Applied Physics 90, 10(2001) 5438-5440
Li N, Fu L, Chan Y, Lu W, Shen S, Tan H, Jagadish C
The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
Journal of Crystal Growth 222(2001) 786-790
The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
Journal of Crystal Growth 222(2001) 786-790
Kucheyev S, Williams J, Zou J, Bradby J, Jagadish C, Li G
Ion-beam-induced reconstruction of amorphous GaN
Physical Review B 63(2001) 113202-1-4
Ion-beam-induced reconstruction of amorphous GaN
Physical Review B 63(2001) 113202-1-4
Linnarsson M, Janson M, Zimmermann U, Svensson B, Persson P, Hultman L, Wong-Leung J, Karlsson S, Schoner A, Bleichner H, Olsson E
Solubility Limit and Precipitate Formation in Al-doped 4H-SiC Epitaxial Material
Applied Physics Letters 79, 13(2001) 2016-2018
Solubility Limit and Precipitate Formation in Al-doped 4H-SiC Epitaxial Material
Applied Physics Letters 79, 13(2001) 2016-2018
Fu L, Tan H, Jagadish C, Li N, Liu Q, Lu W, Shen S
Tuning the detection wavelength of quantum-well infrared photodetectors by single-high energy implantation
Applied Physics Letters 78, 1(2001) 10-12
Tuning the detection wavelength of quantum-well infrared photodetectors by single-high energy implantation
Applied Physics Letters 78, 1(2001) 10-12
Lederer M, Kolev V, Luther-Davies B, Tan H, Jagadish C
Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking
Journal of Physics D: Applied Physics 34, 16(2001) 2455-2464
Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking
Journal of Physics D: Applied Physics 34, 16(2001) 2455-2464
Kuznetsov A, Janson M, Hallen A, Svensson B, Jagadish C, Grunleitner H, Pensl G
Channeling Measurements of Ion Implantation Damage in 4H-SiC
Materials Science Forum 353-356(2001) 595-598
Channeling Measurements of Ion Implantation Damage in 4H-SiC
Materials Science Forum 353-356(2001) 595-598
Kucheyev S, Williams J, Zou J, Jagadish C, Li G
High-dose ion implantation into GaN
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 214-218
High-dose ion implantation into GaN
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 214-218
Kucheyev S, Williams J, Zou J, Jagadish C, Li G
Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures
Applied Physics Letters 78, 10(2001) 1373-1375
Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures
Applied Physics Letters 78, 10(2001) 1373-1375
Kucheyev S, Williams J, Zou J, Jagadish C, Li G
The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN
Nuclear Instruments and Methods in Physics Research: Section B 178(2001) 209-213
The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN
Nuclear Instruments and Methods in Physics Research: Section B 178(2001) 209-213
Liu A, McCallum J, Wong-Leung J
Defect Formation Due to the Crystallization of Deep Amorphous Volumes Formed in Silicon by Mega Electron Volt (MeV) Ion Implantation
Journal of Materials Research 16, 11(2001) 3229-3237
Defect Formation Due to the Crystallization of Deep Amorphous Volumes Formed in Silicon by Mega Electron Volt (MeV) Ion Implantation
Journal of Materials Research 16, 11(2001) 3229-3237
Kucheyev S, Williams J, Titov A, Li G, Jagadish C
Effect of the density of collision cascades on implantation damage in GaN
Applied Physics Letters 78, 18(2001) 2694-2696
Effect of the density of collision cascades on implantation damage in GaN
Applied Physics Letters 78, 18(2001) 2694-2696
Kucheyev S, Williams J, Jagadish C, Zou J, Li G, Titov A
Effect of ion species on the accumulation of ion-beam damage in GaN
Physical Review B 64(2001) 035202/1-10
Effect of ion species on the accumulation of ion-beam damage in GaN
Physical Review B 64(2001) 035202/1-10
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C
Effects of excitation density on cathodoluminescence from GaN
Applied Physics Letters 79, 14(2001) 2154-2156
Effects of excitation density on cathodoluminescence from GaN
Applied Physics Letters 79, 14(2001) 2154-2156
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C, Li G
Cathodoluminescence Depth Profiling of Ion-Implanted GaN
Applied Physics Letters 78, 1(2001) 34-36
Cathodoluminescence Depth Profiling of Ion-Implanted GaN
Applied Physics Letters 78, 1(2001) 34-36
Kucheyev S, Bradby J, Williams J, Jagadish C, Swain M, Li G
Deformation Behavior of Ion-Beam-Modified GaN
Applied Physics Letters 78, 2(2001) 156-158
Deformation Behavior of Ion-Beam-Modified GaN
Applied Physics Letters 78, 2(2001) 156-158
Giniunas L, Danielius R, Tan H, Jagadish C, Adomavicius R, Krotkus A
Electron and trap dynamics in As-ion-implanted and annealed GaAs
Applied Physics Letters 78, 12(2001) 1667-1669
Electron and trap dynamics in As-ion-implanted and annealed GaAs
Applied Physics Letters 78, 12(2001) 1667-1669
Gal M, Wengler M, Ilyas S, Rofii I, Tan H, Jagadish C
Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler
Nuclear Instruments and Methods in Physics Research: Section B 173(2001) 528-532
Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler
Nuclear Instruments and Methods in Physics Research: Section B 173(2001) 528-532
Liu A, McCallum J, Wong-Leung J
The crystallisation of deep amorphous wells in silicon produced by ion implantation
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 164-168
The crystallisation of deep amorphous wells in silicon produced by ion implantation
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 164-168
Boudinov H, Tan H, Jagadish C
Electrical isolation of n-type and p-type InP layers by proton bombardment
Journal of Applied Physics 89, 10(2001) 5343-5347
Electrical isolation of n-type and p-type InP layers by proton bombardment
Journal of Applied Physics 89, 10(2001) 5343-5347
Fu L, Tan H, Jagadish C, Li N, Liu Q, Lu W, Shen S
Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing
Infrared Physics and Technology 42(2001) 171-175
Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing
Infrared Physics and Technology 42(2001) 171-175
Williams J, Ridgway M, Conway M, Wong-Leung J, Zhu X, Petravic M, Fortuna F, Ruault M, Bernas H, Kinomura A, Nakano Y, Hayashi Y
Interaction of Defects and Metals with Nanocavities in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 178(2001) 33-43
Interaction of Defects and Metals with Nanocavities in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 178(2001) 33-43
Cohen M, Allerman A, Choquette K, Jagadish C
Electrically Steerable Lasers using Wide-Aperture VCSELs
IEEE Photonics Technology Letters 13, 6(2001) 544-546
Electrically Steerable Lasers using Wide-Aperture VCSELs
IEEE Photonics Technology Letters 13, 6(2001) 544-546
Dao L, Gal M, Fu L, Tan H, Jagadish C
Possibility of improved frequency response from intermixed quantum-well devices
Superlattices and Microstructures 29, 2(2001) 105-110
Possibility of improved frequency response from intermixed quantum-well devices
Superlattices and Microstructures 29, 2(2001) 105-110
Deenapanray P, Jagadish C
Effect of Stress on Impurity-free quantum well intermixing
Electrochemical and Solid-State Letters 4(2001) G11-G13
Effect of Stress on Impurity-free quantum well intermixing
Electrochemical and Solid-State Letters 4(2001) G11-G13
Deenapanray P, Jagadish C
Impurity free intermixing of GaAs/AlGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5(2001) 1962-1966
Impurity free intermixing of GaAs/AlGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5(2001) 1962-1966
Deenapanray P, Lay M, Aberg D, Tan H, Svensson B, Auret F, Jagadish C
Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition
Physica B 308-310(2001) 776-779
Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition
Physica B 308-310(2001) 776-779
Deenapanray P, Martin A, Jagadish C
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16(2001) 2561-2563
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16(2001) 2561-2563
Wong-Leung J, Jagadish C, Conway M, Fitzgerald J
Effect of implant temperature on secondary defects created by MeV Sn implantation is silicon
Journal of Applied Physics 89(2001) 2556-2559
Effect of implant temperature on secondary defects created by MeV Sn implantation is silicon
Journal of Applied Physics 89(2001) 2556-2559
Williams J, Conway M, Williams B, Wong-Leung J
Direct Observation of Voids in the Vacancy Excess Region of Ion Bombarded Silicon
Applied Physics Letters 78, 19(2001) 2867-2869
Direct Observation of Voids in the Vacancy Excess Region of Ion Bombarded Silicon
Applied Physics Letters 78, 19(2001) 2867-2869
Liu X, Lu W, Shen S, Tan H, Jagadish C, Zou J
Application of Selective Implantation in AIGaAs/InGaAs/GaAs Pseudomorphic Single Quantum Wire Structures
Nanotechnology 1(2001) 389-392
Application of Selective Implantation in AIGaAs/InGaAs/GaAs Pseudomorphic Single Quantum Wire Structures
Nanotechnology 1(2001) 389-392
Svensson B, Hallen A, Linnarsson M, Kuznetsov A, Janson M, Aberg D, Osterman J, Persson P, Hultman L, Storasta L, Carlsson F, Bergman J, Jagadish C, Morvan E
Doping of Silicon Carbide by Ion Implantation
Materials Science Forum 353-356(2001) 549-554
Doping of Silicon Carbide by Ion Implantation
Materials Science Forum 353-356(2001) 549-554
Stritzker B, Petravic M, Wong-Leung J, Williams J
Efficiency of dislocations and cavities for gettering of Cu and Fe in silico
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 154-158
Efficiency of dislocations and cavities for gettering of Cu and Fe in silico
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 154-158
Stritzker B, Petravic M, Wong-Leung J, Williams J
Selectivity of Nanocavities and Dislocations for Gettering of Cu and Fe in Silicon
Applied Physics Letters 78, 18(2001) 2682-2684
Selectivity of Nanocavities and Dislocations for Gettering of Cu and Fe in Silicon
Applied Physics Letters 78, 18(2001) 2682-2684
Pellegrino P, Leveque P, Wong-Leung J, Jagadish C, Svensson B
Separation of vacancy and interstitial depth profiles in ion-implanted silicon: experimental observation
Applied Physics Letters 78, 22(2001) 3442-3444
Separation of vacancy and interstitial depth profiles in ion-implanted silicon: experimental observation
Applied Physics Letters 78, 22(2001) 3442-3444
Pellegrino P, Leveque P, Lalita J, Hallen A, Jagadish C, Svensson B
Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Physical Review B 64(2001) 195211/1-10
Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Physical Review B 64(2001) 195211/1-10
MacDonald D, Cuevas A, Wong-Leung J
Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements
Journal of Applied Physics 89, 12(2001) 7932-7939
Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements
Journal of Applied Physics 89, 12(2001) 7932-7939
Lu W, Liu Q, Li Z, Shen S, Zhao Q, Fu Y, Willander M, Tan H, Jagadish C, Zou J, Cockayne D
Carrier transfer between V-grooved quantum wire and vertical quantum well
Physics Letters A 280(2001) 77-80
Carrier transfer between V-grooved quantum wire and vertical quantum well
Physics Letters A 280(2001) 77-80
Fu Y, Willander M, Liu Q, Lu W, Shen S, Tan H, Jagadish C, Zou J, Cockayne D
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4(2001) 2351-2356
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4(2001) 2351-2356
Tan H, Jagadish C
The micro-photoluminescence of a single V-groove GaAs/AlGaAs quantum wire
Wuli Xuebao/Acta Physica Sinica 49, 9(2000) 1812-1813
The micro-photoluminescence of a single V-groove GaAs/AlGaAs quantum wire
Wuli Xuebao/Acta Physica Sinica 49, 9(2000) 1812-1813
Tan H, Jagadish C
Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures
Japanese Journal of Applied Physics 39, 9 A(2000) 5124-5127
Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures
Japanese Journal of Applied Physics 39, 9 A(2000) 5124-5127
Williams J, Jagadish C
The use of micro-raman spectroscopy to monitor high-pressure hightemperature annealing of ion-implanted GaN films
Materials Research Society Symposium Proceedings 595(2000) W11461-W11466
The use of micro-raman spectroscopy to monitor high-pressure hightemperature annealing of ion-implanted GaN films
Materials Research Society Symposium Proceedings 595(2000) W11461-W11466
Fu L, Tan H, Jagadish C
Application of high energy implantation in tuning the detection wavelength of quantum well infrared photodetectors
Journal of Environmental Chemical Engineering 1(2000) 88-89
Application of high energy implantation in tuning the detection wavelength of quantum well infrared photodetectors
Journal of Environmental Chemical Engineering 1(2000) 88-89
Tan H, Williams J, Jagadish C
The use of micro-raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1(2000)
The use of micro-raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1(2000)
Deenapanray P, Tan H, Gaff K, Petravic M, Jagadish C
Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147, 5(2000) 1950-1956
Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147, 5(2000) 1950-1956
Dou H, Fu L, Jagadish C, Tan H
Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector
Journal of Environmental Chemical Engineering 19, 1(2000) 25-28
Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector
Journal of Environmental Chemical Engineering 19, 1(2000) 25-28
Williams J, Jagadish C
Ion-beam-induced dissociation and bubble formation in GaN
Applied Physics Letters 77, 22(2000) 3577-3579
Ion-beam-induced dissociation and bubble formation in GaN
Applied Physics Letters 77, 22(2000) 3577-3579
Dou H, Tan H, Fu L, Jagadish C
Performance comparison of GaAs/AlGaAs quantum well infrared photodetectors grown by MOCVD and MBE
Journal of Environmental Chemical Engineering 21, 5(2000) 441-444
Performance comparison of GaAs/AlGaAs quantum well infrared photodetectors grown by MOCVD and MBE
Journal of Environmental Chemical Engineering 21, 5(2000) 441-444
Kucheyev S, Bradby J, Williams J, Jagadish C, Toth M, Phillips M, Swain M
Nanoindentation of Epitaxial GaN Films
Applied Physics Letters 77(2000) 3373-3375
Nanoindentation of Epitaxial GaN Films
Applied Physics Letters 77(2000) 3373-3375
Liu Q, Li N, Lu W, Yuan X, Shen S, Fu L, Tan H, Jagadish C
Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing
Japanese Journal of Applied Physics 39(2000) 1687-1689
Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing
Japanese Journal of Applied Physics 39(2000) 1687-1689
Gingrich H, Morath C, Manasreh M, Ballet P, Smathers J, Salamo G, Jagadish C
Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/A10.3Ga0.7As Multiple Quantum Wells
Materials Research Society Symposium Proceedings 607(2000) 217-222
Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/A10.3Ga0.7As Multiple Quantum Wells
Materials Research Society Symposium Proceedings 607(2000) 217-222
Kucheyev S, Williams J, Jagadish C, Zou J, Craig V, Li G
Ion-Beam-Induced Porosity of GaN
Applied Physics Letters 77(2000) 1455-1457
Ion-Beam-Induced Porosity of GaN
Applied Physics Letters 77(2000) 1455-1457
Kucheyev S, Williams J, Jagadish C, Zou J, Li G
Damage Buildup in GaN under Ion Bombardment
Physical Review B 62(2000) 7510-7522
Damage Buildup in GaN under Ion Bombardment
Physical Review B 62(2000) 7510-7522
Kucheyev S, Williams J, Jagadish C, Zou J, Li G
Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment
Journal of Applied Physics 88(2000) 5493-5495
Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment
Journal of Applied Physics 88(2000) 5493-5495
Kucheyev S, Williams J, Zou J, Jagadish C, Li G
Ion beam induced dissociation and bubble formation in GaN
Applied Physics Letters 77(2000) 3577-3579
Ion beam induced dissociation and bubble formation in GaN
Applied Physics Letters 77(2000) 3577-3579
Liu Q, Li N, Li Z, Lu W, Shen S, Fu Y, Willander M, Tan H, Jagadish C, Zou J
Investigation of AlGaAs/GaAs V-grooved Quantum Wire Infrared
Japanese Journal of Applied Physics 39(2000) 5124-5127
Investigation of AlGaAs/GaAs V-grooved Quantum Wire Infrared
Japanese Journal of Applied Physics 39(2000) 5124-5127
Hegeler F, Manasreh M, Morath C, Ballet P, Yang H, Salamo G, Tan H, Jagadish C
Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells
Applied Physics Letters 77(2000) 2867-2869
Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells
Applied Physics Letters 77(2000) 2867-2869
Liu Q, Li Z, Chen X, Lu W, Shen S, Tan H, Yuan S, Jagadish C
Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures
Physics Letters A 271(2000) 213-216
Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures
Physics Letters A 271(2000) 213-216
Liu Q, Lu W, Chen X, Shen S, Tan H, Yuan S, Jagadish C, Johnston M, Dao L, Gal M, Zou J, Cockayne D
Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
Journal of Applied Physics 87(2000) 1566-1568
Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
Journal of Applied Physics 87(2000) 1566-1568
Marcinkevicius S, Jagadish C, Tan H, Kaminska M, Korona K, Adomavicius R, Krotkus A
Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers
Applied Physics Letters 76(2000) 1306-1308
Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers
Applied Physics Letters 76(2000) 1306-1308
Schmidt D, Svensson B, Seibt M, Jagadish C, Davies G
Photoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Micrsocopy Measurements on MeV Self-Ion Implanted and Annealed n-type Silicon
Journal of Applied Physics 88(2000) 2309-2317
Photoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Micrsocopy Measurements on MeV Self-Ion Implanted and Annealed n-type Silicon
Journal of Applied Physics 88(2000) 2309-2317
Toth M, Kucheyev S, Williams J, Jagadish C, Phillips M, Li G
Imaging Charge Trap Distributions in GaN Using Environmental Scanning Electron Micrsocopy
Applied Physics Letters 77(2000) 1342-1344
Imaging Charge Trap Distributions in GaN Using Environmental Scanning Electron Micrsocopy
Applied Physics Letters 77(2000) 1342-1344
Wong-Leung J, Fatima S, Jagadish C, Fitzgerald J
Effect of implant temperature on extended defects created by ion implantation in silicon
Defects and Diffusion Forum Part A: Defect and Diffusion Forum 183, 1(2000) 163-169
Effect of implant temperature on extended defects created by ion implantation in silicon
Defects and Diffusion Forum Part A: Defect and Diffusion Forum 183, 1(2000) 163-169
Wong-Leung J, Fatima S, Jagadish C, Fitzgerald J, Chou C, Zou J, Cockayne D
Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon
Journal of Applied Physics 88(2000) 1312-1318
Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon
Journal of Applied Physics 88(2000) 1312-1318
Zhao Q, Willander M, Lu W, Liu Q, Shen S, Tan H, Jagadish C, Zou J, Cockayne D
Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
Journal of Applied Physics 88(2000) 2519-2522
Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
Journal of Applied Physics 88(2000) 2519-2522
Fu Y, Willander M, Lu W, Liu Q, Shen S, Jagadish C, Gal M, Zou J, Cockayne D
Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
Physical Review B 61(2000) 8306-8311
Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
Physical Review B 61(2000) 8306-8311
Kuball M, Hayes J, Suski T, Jun J, Leszczynski M, Domagala J, Tan H, Williams J, Jagadish C
High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering
Journal of Applied Physics 87(2000) 2736-2741
High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering
Journal of Applied Physics 87(2000) 2736-2741
Fu L, Deenapanray P, Tan H, Jagadish C, Dao L, Gal M
Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing
Applied Physics Letters 76(2000) 837-839
Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing
Applied Physics Letters 76(2000) 837-839
Deenapanray P, Tan H, Jagadish C, Auret F
Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition
Applied Physics Letters 77(2000) 696-698
Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition
Applied Physics Letters 77(2000) 696-698
Deenapanray P, Tan H, Jagadish C, Auret F
Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers
Journal of Applied Physics 88(2000) 5255-5261
Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers
Journal of Applied Physics 88(2000) 5255-5261
Deenapanray P, Tan H, Fu L, Jagadish C
Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
Electrochemical and Solid-State Letters 3(2000) 196-199
Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
Electrochemical and Solid-State Letters 3(2000) 196-199
Deenapanray P, Tan H, Cohen M, Gaff K, Petravic M, Jagadish C
Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147(2000) 1950-1956
Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147(2000) 1950-1956
Deenapanray P, Tan H, Jagadish C
Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells
Materials Research Society Symposium Proceedings 607(2000) 491-502
Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells
Materials Research Society Symposium Proceedings 607(2000) 491-502
Deenapanray P, Fu L, Petravic M, Jagadish C, Gong B, Lamb R
Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells
Surface and Interface Analysis 29(2000) 754-760
Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells
Surface and Interface Analysis 29(2000) 754-760
Dao L, Gal M, Li G, Jagadish C
Photoluminescence in delta-doped InGaAs/GaAs single quantum wells
Journal of Applied Physics 87(2000) 3896-3899
Photoluminescence in delta-doped InGaAs/GaAs single quantum wells
Journal of Applied Physics 87(2000) 3896-3899
Dao L, Gal M, Carmody C, Tan H, Jagadish C
A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells
Journal of Applied Physics 88(2000) 5252-5254
A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells
Journal of Applied Physics 88(2000) 5252-5254
Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Transmission Electron Microscopy Observation of Deformation Microstructure under Spherical Indentation in Silicon
Applied Physics Letters 77(2000) 3749-3751
Transmission Electron Microscopy Observation of Deformation Microstructure under Spherical Indentation in Silicon
Applied Physics Letters 77(2000) 3749-3751
Babinski M, Siwiec-Matuszyk J, Baranowski J, Li G, Jagadish C
Transport and quantum electron mobility in the modulation Si d-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy
Applied Physics Letters 77(2000) 999-1001
Transport and quantum electron mobility in the modulation Si d-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy
Applied Physics Letters 77(2000) 999-1001
Kucheyev S, Williams J, Jagadish C, Li G, Pearton S
Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN
Applied Physics Letters 76(2000) 3899-3901
Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN
Applied Physics Letters 76(2000) 3899-3901
Fu L, Tan H, Jagadish C
Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation
Griffith Asia Quarterly (1999) 355-357
Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation
Griffith Asia Quarterly (1999) 355-357
Fu L, Tan H, Jagadish C
Interdiffused quantum-well infrared photodetectors for color sensitive arrays
Applied Physics Letters 75, 7(1999) 923-925
Interdiffused quantum-well infrared photodetectors for color sensitive arrays
Applied Physics Letters 75, 7(1999) 923-925
Fatima S, Jagadish C, Wong-Leung J
Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions
Griffith Asia Quarterly (1999) 505-508
Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions
Griffith Asia Quarterly (1999) 505-508
Fu L, Tan H, Jagadish C, Gal M
Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices
Griffith Asia Quarterly (1999) 352-354
Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices
Griffith Asia Quarterly (1999) 352-354
Dou H, Jagadish C
Photoluminescence of InGaAs/GaAs with double lights
Journal of Environmental Chemical Engineering 20, 8(1999) 656-661
Photoluminescence of InGaAs/GaAs with double lights
Journal of Environmental Chemical Engineering 20, 8(1999) 656-661
Lederer M, Luther-Davies B, Tan H, Jagadish C
Nonlinear optical properties of ion-implanted GaAs
Griffith Asia Quarterly (1999) 151-153
Nonlinear optical properties of ion-implanted GaAs
Griffith Asia Quarterly (1999) 151-153