This project aims to demonstrate semiconductor nanowire based infrared avalanche photodetectors (APDs) with ultra-high sensitivity towards single photon detection. By employing the advantages of their unique one-dimensional nanoscale geometry, the nanowire APDs can be engineered to different device architectures to achieve performance superior to their conventional counterparts. This will contribute to the development of next generation infrared photodetector technology enabling numerous emerging fields in modern transportation, communication, quantum computation and information processing.

In this project we aim to design and demonstrate  III-V compound semiconductor based quantum well nanowire light emitting devices with wavelength ranging from 1.3 to 1.6 μm for optical communication applications.

Flexible GaN for applications in wearable and flexible electronics.

This project aims to investigate the growth of III-V semiconductors on pre-patterned nanotemplates. By using different shapes and geometries, it is envisaged that these nanostructures will provide novel architectures for advanced, next generation optoelectronic devices.

While there have been numerous demonstrations of planar growth of III-V materials on Si substrates, growing III-V nanostructures directly on Si is not a trivial task. In this project, we aim to demonstrate the direct growth of InP/InAsP light-emitting nanostructures on Si substrates by engineering the III-V/Si interfacial energy. 

This project aims to develop high efficiency, cost-effective III-V semiconductor-perovskite tandem solar cells which are flexible and lightweight, while achieving excellent device stability.

In this project, we aim to demonstrate lasing in a bottom-up metasurface device supporting a perturbed symmetry-protected, quasi-BIC mode. The unit cell of the metasurface consists of a pair of InP nanosheet structures that are grown with the selective area epitaxy technique. 

Bottom-up fabrication of lasers via epitaxial growth has been emerging as a promising alternative to the conventional top-down fabrication methods. In this project, we aim to demonstrate electrically-injected lasing in InP/InAsP multi-quantum well micro-ring cavities that are grown by the selective area epitaxy technique.

This project aims to investigate the concepts and strategies required to produce electrically injected semiconductor nanowire lasers by understanding light interaction in nanowires, designing appropriate structures to inject current, engineer the optical profile and developing nano-fabrication technologies. Electrically operated nanowire lasers would enable practical applications in nanophotonics.

In this project, we aim to explore PT-symmetric lasing in III-V semiconductor micro-cavity lasers that are epitaxially grown on their substrates, free from any etching-induced damage. In particular, we aim to demonstrate performance improvements by exploiting some of the unique features of bottom-up grown laser cavities.