Bottom-up fabrication of lasers via epitaxial growth is emerging as a promising alternative to conventional top-down methods, offering potential to realize micro-lasers with ultra-low optical losses. In this project, we aim to demonstrate electrically injected lasing in InP/InAsP multi-quantum well micro-ring cavities, grown using the selective area epitaxy technique.

This project aims to investigate the concepts and strategies required to produce electrically injected semiconductor nanowire lasers by understanding light interaction in nanowires, designing appropriate structures to inject current, engineer the optical profile and developing nano-fabrication technologies. Electrically operated nanowire lasers would enable practical applications in nanophotonics.

In this project we aim to design and demonstrate  III-V compound semiconductor based quantum well nanowire light emitting devices with wavelength ranging from 1.3 to 1.6 μm for optical communication applications.

This project aims to develop high efficiency, cost-effective III-V semiconductor-perovskite tandem solar cells which are flexible and lightweight, while achieving excellent device stability.

This project aims to demonstrate lasing in a bottom-up metasurface supporting a perturbed symmetry-protected quasi-BIC mode, while exploring its unique optical properties. We will also develop fabrication processes to achieve electrically injected lasing, highlighting the advantages of bottom-up metasurface design over conventional top-down laser fabrication approaches.

This project aims to demonstrate semiconductor nanowire based infrared avalanche photodetectors (APDs) with ultra-high sensitivity towards single photon detection. By employing the advantages of their unique one-dimensional nanoscale geometry, the nanowire APDs can be engineered to different device architectures to achieve performance superior to their conventional counterparts. This will contribute to the development of next generation infrared photodetector technology enabling numerous emerging fields in modern transportation, communication, quantum computation and information processing.

Flexible GaN for applications in wearable and flexible electronics.

In this project, we aim to explore PT-symmetric lasing in III-V semiconductor micro-cavity lasers that are epitaxially grown on their substrates, free from any etching-induced damage. In particular, we aim to demonstrate performance improvements by exploiting some of the unique features of bottom-up grown laser cavities.

This project aims to investigate the growth of III-V semiconductors on pre-patterned nanotemplates. By using different shapes and geometries, it is envisaged that these nanostructures will provide novel architectures for advanced, next generation optoelectronic devices.

Although planar growth of III-V materials on Si has been widely demonstrated, direct growth of III-V nanostructures on Si remains challenging. This project aims to realize InP/InAsP light-emitting nanostructures on Si substrates by engineering the III-V/Si interfacial energy, enabling monolithic integration of active photonic components on silicon.

We demonstrate directional emission from III-V nanowire lasers by engineering waveguide modes in optically coupled nanowire pairs. Arrays of such pairs enhance far-field directionality via non-local resonance, highlighting the potential of metasurface lasers as compact, coherent light sources for applications such as LiDAR and beam steering.

In this project, we aim to demonstrate photonic crystal surface-emitting lasers (PCSELs) constructed from vertically-standing III-V semiconductor nanowires as the fundamental building blocks. We will also explore more advanced nanowire-based PCSEL designs, including hetero-lattice PCSELs with enhanced in-plane optical feedback and topological PCSELs.