The project aims at establishing the possibilities of high-energy electron scattering in the analysis of thin layers. 

Auger electrons are emitted after nuclear decay and are used for medical purposes. The number of Auger electrons generated per nuclear decay is not known accurately, a fact that  hinders medical applications.  This project aims to obtain a experimental estimate of the number of Auger electrons emitted per nuclear decay.

This project aims to investigate how the mechnical properties of plant cells change with 'poking' from an external source. In nature the poking is by a pathogen. We mimic this effect with a diamond tip.

Simplify nanowire solar cell fabrication by eliminating the need for p-n junctions to increase the ultimate device efficiency.

This project aims to develop III-V semiconductors for applicaiton in solar fuels generation. 

In this project, we will characterise actual device solar cell structures with electron microscopy techniques and seek to understand the microscopic effects behind the device performance and reliability

This is an all-encompassing program to integrate highly sophisticated theoretical modelling, material growth and nanofabrication capabilities to develop high performance semiconductor nanowire array solar cells. It will lead to understanding of the underlying photovoltaic mechanisms in nanowires and design of novel solar cell architectures.

This projects combines ion implantation and deep level transient spectroscopy to study electrically active deep level defects in wide bandgap semiconductors.

Interest in biomimetic computing has led to interest in an excting new range of of solid-state neurons and synapses based on non-volatile resistive-switching and volatile threshold-switching in metal-oxide thin films.  This project will explore the operation and functionality of these new devices.

The project aims at establishing the possibilities of high-energy electron scattering in the analysis of thin layers. 

This project will combine experimental work, computer simulation and modelling to investigate the physical processes underpinning resistive switching in transition metal oxides (e.g. Ta₂O₅, HfO_2, Nb₂O₅ and NbO₂) and to explore its application in future non-volatile memory (i.e. ReRAM) devices.

Simplify nanowire solar cell fabrication by eliminating the need for p-n junctions to increase the ultimate device efficiency.

Development of nanowire LEDs for small, robust and highly portable UV sources.

This projects combines ion implantation and deep level transient spectroscopy to study electrically active deep level defects in wide bandgap semiconductors.

New forms of materials can be made using extreme pressures via diamond anvil cells.

This new system was built at ANU as part of an ARC Linkage project with a US nanoindentation company.

This project aims to develop III-V semiconductors for applicaiton in solar fuels generation. 

In this project, we will characterise actual device solar cell structures with electron microscopy techniques and seek to understand the microscopic effects behind the device performance and reliability

Contact resistance is becoming a major limitation to device performance and new strategies are required to meet the needs of next-generation devices.  Existing contacts typically exploit the thermal and chemical stability of silicide/Si interfaces and take the form of a metal/silicide/Si heterostructure (e.g. W/TiN/TiSi₂/Si), with the contact resistance dominated by the silicide/Si interface. The contact resistance of this interface is limited by the doping concentration in the Si substrate and the Schottky barrier height (SBH) of the heterojunction.  However, doping concentrations already exceed equilibrium solid solubility limits and further increases achieve only minor improvements.  Instead, any further reduction in contact resistivity relies on reducing the SBH.  This project will explore methods for controlling the SBH and develop device structures for measuring ultra-low contact resistivities.

We have shown that this fascinating material has different properties depending on the thermal pathways. The effect on how this influences the new phased formed under pressure has not been investigated.

Investigate the fascinating porous structures of ion irradiated antimony based semiconductors and utlise them to built proptotype sensing devices or thermolectric generators.

This project aims to investigate the growth of III-V semiconductors on pre-patterned nanotemplates. By using different shapes and geometries, it is envisaged that these nanostructures will provide novel architectures for advanced, next generation optoelectronic devices.

The hexagonal form of sp3 bonded carbon is predicted to be harder than 'normal' cubic diamond. We can make tiny amounts of this new form of diamond and want to know if it really is harder than diamond.

The equilibrium shape of voids or crystals is largely influenced by the total surface energies encompassing these 3D objects. This aim of this project is to extract the surface energies of different planes from transmission electron microscopy images of faceted voids and nanowires.

Uniform composition and tunability over the emission wavelength of ternary nanowires is an important challenge for nanowire growth. Growth of nanowires combined with a range of characterisation techniques including electron microscopy will be used for this project. PhD studentships currently available. 

This project aims to investigate how the mechnical properties of plant cells change with 'poking' from an external source. In nature the poking is by a pathogen. We mimic this effect with a diamond tip.

This project investigates the structure and density of defects created in 2D materials by energetic ion irradiation, and studies how such defects affect the physical properties of this important class of materials.

Study the formation and stability of high energy ion tracks in minerals under controlled environments with importance for geological dating techniques.

Scanning electron microscopy is a powerful tool for materials and this method is believed to correctly identify depletion regions in semiconductor devices. This project links the electron microscopy contrast  to the depletion regions measured by capacitance-voltage measurements in some devices with an aim to understanding the source of contrast. 

Development of novel composite nanopore membranes.

Interest in biomimetic computing has led to interest in an excting new range of of solid-state neurons and synapses based on non-volatile resistive-switching and volatile threshold-switching in metal-oxide thin films.  This project will explore the operation and functionality of these new devices.

This project aims to investigate the concepts and strategies required to produce electrically injected semiconductor nanowire lasers by understanding light interaction in nanowires, designing appropriate structures to inject current, engineer the optical profile and developing nano-fabrication technologies. Electrically operated nanowire lasers would enable practical applications in nanophotonics.

Auger electrons are emitted after nuclear decay and are used for medical purposes. The number of Auger electrons generated per nuclear decay is not known accurately, a fact that  hinders medical applications.  This project aims to obtain a experimental estimate of the number of Auger electrons emitted per nuclear decay.

The project aims to investigate compound semiconductor micro-ring lasers on silicon substrates using selective area growth to engineer the shape of the lasing cavity at the nano/micro-scale. This project will open up new doors to the industry since an integrated laser which is reliable, efficient and easily manufacturable is still elusive in Si photonics.

This project will combine experimental work, computer simulation and modelling to investigate the physical processes underpinning resistive switching in transition metal oxides (e.g. Ta₂O₅, HfO_2, Nb₂O₅ and NbO₂) and to explore its application in future non-volatile memory (i.e. ReRAM) devices.

Development of nanowire LEDs for small, robust and highly portable UV sources.

Develop and utilise computer simulations to analyse synchrotron based scattering from nano-sized objects.

Contact resistance is becoming a major limitation to device performance and new strategies are required to meet the needs of next-generation devices.  Existing contacts typically exploit the thermal and chemical stability of silicide/Si interfaces and take the form of a metal/silicide/Si heterostructure (e.g. W/TiN/TiSi₂/Si), with the contact resistance dominated by the silicide/Si interface. The contact resistance of this interface is limited by the doping concentration in the Si substrate and the Schottky barrier height (SBH) of the heterojunction.  However, doping concentrations already exceed equilibrium solid solubility limits and further increases achieve only minor improvements.  Instead, any further reduction in contact resistivity relies on reducing the SBH.  This project will explore methods for controlling the SBH and develop device structures for measuring ultra-low contact resistivities.

Investigate the fascinating porous structures of ion irradiated antimony based semiconductors and utlise them to built proptotype sensing devices or thermolectric generators.

This project aims to investigate the growth of III-V semiconductors on pre-patterned nanotemplates. By using different shapes and geometries, it is envisaged that these nanostructures will provide novel architectures for advanced, next generation optoelectronic devices.

Semiconductor nanowires are emerging nano-materials with substantial opportunities for novel photonic and electronic device applications. This project aims at developing a new generation of high performance NW based photodetectors for a wide range of applications.

The equilibrium shape of voids or crystals is largely influenced by the total surface energies encompassing these 3D objects. This aim of this project is to extract the surface energies of different planes from transmission electron microscopy images of faceted voids and nanowires.

Uniform composition and tunability over the emission wavelength of ternary nanowires is an important challenge for nanowire growth. Growth of nanowires combined with a range of characterisation techniques including electron microscopy will be used for this project. PhD studentships currently available. 

In this project we aim to design and demonstrate  III-V compound semiconductor based quantum well nanowire light emitting devices with wavelength ranging from 1.3 to 1.6 μm for optical communication applications.

This project investigates the structure and density of defects created in 2D materials by energetic ion irradiation, and studies how such defects affect the physical properties of this important class of materials.

Study the formation and stability of high energy ion tracks in minerals under controlled environments with importance for geological dating techniques.

Scanning electron microscopy is a powerful tool for materials and this method is believed to correctly identify depletion regions in semiconductor devices. This project links the electron microscopy contrast  to the depletion regions measured by capacitance-voltage measurements in some devices with an aim to understanding the source of contrast. 

Development of novel composite nanopore membranes.

This is an all-encompassing program to integrate highly sophisticated theoretical modelling, material growth and nanofabrication capabilities to develop high performance semiconductor nanowire array solar cells. It will lead to understanding of the underlying photovoltaic mechanisms in nanowires and design of novel solar cell architectures.

This project aims to investigate the concepts and strategies required to produce electrically injected semiconductor nanowire lasers by understanding light interaction in nanowires, designing appropriate structures to inject current, engineer the optical profile and developing nano-fabrication technologies. Electrically operated nanowire lasers would enable practical applications in nanophotonics.

The project aims to investigate compound semiconductor micro-ring lasers on silicon substrates using selective area growth to engineer the shape of the lasing cavity at the nano/micro-scale. This project will open up new doors to the industry since an integrated laser which is reliable, efficient and easily manufacturable is still elusive in Si photonics.

Semiconductor nanowires are emerging nano-materials with substantial opportunities for novel photonic and electronic device applications. This project aims at developing a new generation of high performance NW based photodetectors for a wide range of applications.

In this project we aim to design and demonstrate  III-V compound semiconductor based quantum well nanowire light emitting devices with wavelength ranging from 1.3 to 1.6 μm for optical communication applications.

Develop and utilise computer simulations to analyse synchrotron based scattering from nano-sized objects.