Professor Hoe Tan

Position Professor
Department Department of Electronic Materials Engineering
Qualifications BE (Melb.), PhD (ANU)
Office phone (02) 612 50356
Email
Office John Carver 4 17

Publications

Book chapter

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Disordering of quantum structures for optoelectronic device integration
Comprehensive Semiconductor Science and Technology
Elsevier, Amsterdam Netherlands (2011) 584-621
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Quantum Dot Integrated Optoelectronic Devices
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011) 11.1-11.34
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In(Ga)As/GaAs quantum dots grown by MOCVD for optoelectronic device applications
Self-Assembled Quantum Dots
Springer, New York (2008) 359-403

(3 publications)

Journal article

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III-V Semiconductor Materials for Solar Hydrogen Production: Status and Prospects
ACS Energy Letters 5, 2() 611-622
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Fabrication of WO3/TiO2 core-shell nanowire arrays: Structure design and high electrochromic performance
Electrochimica Acta 330, 0()
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Forward and Backward Switching of Nonlinear Unidirectional Emission from GaAs Nanoantennas
ACS Nano 14() 1379-1389
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Carrier dynamics and recombination mechanisms in InP twinning superlattice nanowires
Optics Express 28, 11() 16795-16804
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Strain distribution in wrinkled hBN films
Solid State Communications 310()
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Highly regular rosette-shaped cathodoluminescence in GaN self-assembled nanodisks and nanorods
Nano Research ()
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Non-epitaxial carrier selective contacts for III-V solar cells: A review
Applied materials today 18()
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Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes
Nano Energy 71()
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Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN
Crystal Growth & Design 20, 3() 1811-1819
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Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy [IN PRESS]
Nano Research ()
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Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum α-Ga2O3 on sapphire
Applied Surface Science 513()
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Characterization, Selection, and Microassembly of Nanowire Laser Systems
Nano Letters 20, 3() 1862-1868
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Metal-organic framework-derived porous Cu2O/Cu@C core-shell nanowires and their application in uric acid biosensor
Applied Surface Science 506, 0169-4332()
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Review on III-V semiconductor single nanowire-based room temperature infrared photodetectors
Materials 13, 6()
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Nanosails Showcasing Zn3As2 as an Optoelectronic-Grade Earth Abundant Semiconductor
Physica Status Solidi: Rapid Research Letters 13, 7() 1-5
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Crystalline WO3 nanowires array sheathed with sputtered amorphous shells for enhanced electrochromic performance
Applied Surface Science 498, 0()
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Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy
Physical Review B 99, 16() 1-7
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Designed growth of WO3/PEDOT core/shell hybrid nanorod arrays with modulated electrochromic properties
Chemical Engineering Journal 355() 942-951
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Tailoring directional scattering of second-harmonic generation from (111)-GaAs nanoantennas
Proceedings of SPIE - International Society for Optical Engineering 11200()
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Shape Engineering of InP Nanostructures by Selective Area Epitaxy
ACS Nano 13, 6() 7261-7269
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Tailoring Second-Harmonic Emission from (111)-GaAs Nanoantennas
Nano Letters 19, 6() 3905-3911
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Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy
Nano Letters 19, 7() 4666-4677
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Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices
Scientific Reports 9, 0()
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Wavelength-tunable InAsP quantum dots in InP nanowires
Applied Physics Letters 115, 5() 1-5
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Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires
Nanoscale 11, 18() 9207-9215
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Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire
ACS Nano 13, 3() 3492-3499
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High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture
ACS Nano 13, 10() 12015-12023
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Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission
Journal of Spectroscopy and Dynamics 13, 11() 13492-13500
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Broadband Metamaterial Absorbers
Advanced Optical Materials 7, 3() 1-32
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Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes
Nano Letters 19, 6() 3821-3829
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Exploiting defects in TiO2 inverse opal for enhanced photoelectrochemical water splitting
Optics Express 27, 2() 761-773
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Engineering III-V Semiconductor Nanowires for Device Applications [IN PRESS]
Advanced Materials 0, 0()
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Introduction of TiO2 in CuI for Its Improved Performance as a p-Type Transparent Conductor
ACS Applied Materials and Interfaces 11, 27() 24254-24263
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Band alignment and band bending at a-Ga2O3/ZnO n-n isotype hetero-interface
Applied Physics Letters 115, 20() 1-5
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Large-Area Hexagonal Boron Nitride for Surface Enhanced Raman Spectroscopy
Advanced Materials Technologies 4, 8() 1-7
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Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures
Nanoscale Research Letters 14()
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Four-Dimensional Probing of Phase-Reaction Dynamics in Au/GaAs Nanowires
Nano Letters 19, 2() 781-786
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Resonant harmonic generation in AlGaAs nanoantennas probed by cylindrical vector beams
Nanoscale 11, 4() 1745-1753
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Strong Hot Carrier Effects in Single Nanowire Heterostructures
Nano Letters 19, 8() 5062-5069
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Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization
Nanoscale Advances 1, 11() 4393-4397
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Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing
Nano Letters 19, 1() 362-368
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Effect of Sn Addition on Epitaxial GaAs Nanowire Grown at Different Temperatures in Metal-Organic Chemical Vapor Deposition
Crystal Growth & Design 19, 9() 5314-5319
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InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting
ACS Applied Materials and Interfaces 11, 28() 25236-25242
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Solution-Processed InAs Nanowire Transistors as Microwave Switches
Advanced Electronic Materials 5, 1() 1-8
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Design Principles for Fabrication of InP-Based Radial Junction Nanowire Solar Cells Using an Electron Selective Contact
IEEE Journal of Photovoltaics 9, 4() 980-991
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Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires
Nano Letters 19, 11() 8262-8269
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On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire
Applied Physics Letters 115, 18() 1-5
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Ultrathin Ta 2 O 5 electron-selective contacts for high efficiency InP solar cells
Nanoscale 11, 15() 7497-7505
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Axial p-n junction design and characterization for InP nanowire array solar cells
Progress in Photovoltaics: Research and Applications 27, 3() 237-244
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Compositional Varied Core-Shell InGaP Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Nano Letters 19, 6() 3782-3788
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Mechanical Behavior of InP Twinning Superlattice Nanowires
Nano Letters 19, 7() 4490-4497
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Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer
Journal of Physics D: Applied Physics 51, 39() 1-9
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Temperature effects in contacts between a metal and a semiconductor nanowire near the degenerate doping
Nanotechnology 29, 16() 13
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In situ mechanical resonance behaviour of pristine and defective zinc blende GaAs nanowires
Nanoscale 10, 5() 2588-2595
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Distinguishing cap and core contributions to the photoconductive terahertz response of single gaas based coreshellcap nanowire detectors [Apvalkalo ir erdies ind?li? atskyrimas teraherciniame gaas erdies-kevalo-apvalkalo tipo vieno nanolaido detektoriau
Lithuanian Journal of Physics 58, 1() 15-23
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Preparation of V2O5 dot-decorated WO3 nanorod arrays for high performance multi-color electrochromic devices
Journal of Materials Chemistry C: materials for optical and electronic devices 6, 45() 12206-12216
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Modal refractive index measurement in nanowire lasers - a correlative approach
Nano Futures 2, 035004()
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Distinguishing cap and core contributions to the photoconductive terahertz response of single GaAs based core–shell–cap nanowire detectors
Lithuanian Journal of Physics 58, 1() 15-23
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Role of surface energy in nanowire growth
Journal of Physics D: Applied Physics 51, 28() 15
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The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods
Nanoscale 10, 23() 11205-11210
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Modal refractive index measurement in nanowire lasersa correlative approach
Nano Futures 2, 3()
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Giant optical pathlength enhancement in plasmonic thin film solar cells using core-shell nanoparticles
Journal of Physics D: Applied Physics 51, 29() 8
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Radial Growth Evolution of InGaAs/InP Multi Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy
ACS Nano 12, 10() 10374-10382
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Vertically Emitting Indium Phosphide Nanowire Lasers
Nano Letters 18, 6() 3414-3420
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Tantalum Oxide Electron-Selective Heterocontacts for Silicon Photovoltaics and Photoelectrochemical Water Reduction
Journal of Environmental Chemical Engineering 3, 1() 125-131
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Identification and modulation of electronic band structures of single-phase ?-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy
Applied Physics Letters 113, 4() 1-6
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Perovskite Photovoltaic Integrated CdS/TiO2 Photoanode for Unbiased Photoelectrochemical Hydrogen Generation
ACS Applied Materials and Interfaces 10, 28() 23766-23773
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CdS/TiO2 photoanodes via solution ion transfer method for highly efficient solar hydrogen generation
Nano Futures 2, 1() 8
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Transfer printing of semiconductor nanowire lasers
I E T Optoelectronics 12, 1() 30-35
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Direct-coated Cu2SnS3 films from molecular solution inks for solar photovoltaics
Materials Science in Semiconductor Processing 88() 120-126
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Tailored Emission Properties of ZnTe/ZnTe:O/ZnO Core-Shell Nanowires Coupled with an Al Plasmonic Bowtie Antenna Array
ACS Nano 12, 7() 7327-7334
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The effect of Sn addition on GaAs nanowire grown by vapor-liquid-solid growth mechanism
Nanotechnology 29, 46() 1-8
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Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires
Nanotechnology 29, 22() 1-10
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Flow modulation epitaxy of hexagonal boron nitride
2D Materials 5, 4() 1-10
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Electrochemical hydrogenation of mixed-phase TiO2 nanotube arrays enables remarkably enhanced photoelectrochemical water splitting performance
Science Bulletin 63, 3() 194-202
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Photo-assisted synthesis of coaxial-structured polypyrrole/electrochemically hydrogenated TiO2 nanotube arrays as a high performance supercapacitor electrode
RSC Advances 8, 24() 13393-13400
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Photoelectrochemical studies of InGaN/GaN MQW photoanodes
Nanotechnology 29, 4() 8
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Tuning the morphology and structure of disordered hematite photoanodes for improved water oxidation: A physical and chemical synergistic approach
Nano Energy 53() 745-752
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III-V Semiconductor Single Nanowire Solar Cells: A Review
Advanced Materials Technologies 3, 9() 12
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Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance
Progress in Natural Science: Materials International 28, 2() 178-182
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Single n+-i-n+ InP Nanowires for Highly Sensitive Terahertz Detection
Nanotechnology 28, 12() 9
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3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Advanced Materials 29, 31() 1-8
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Improved photoelectrochemical performance of GaN nanopillar photoanodes
Nanotechnology 28, 15()
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3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Advanced Materials 29, 31() 1-8
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Extreme absorption enhancement in ZnTe:O/ZnO intermediate band core-shell nanowires by interplay of dielectric resonance and plasmonic bowtie nanoantennas
Scientific Reports 7, 1() 7503-7503
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Excited State Biexcitons in Atomically Thin MoSe2
ACS Nano 11, 7() 7468-7475
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Nanostructured Photoelectrodes via Template-Assisted Fabrication
Semiconductors and Semimetals 97() 289-313
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Strong Amplified Spontaneous Emission from High Quality GaAs1-xSbx Single Quantum Well Nanowires
Journal of Physical Chemistry C 121, 15() 8636-8644
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Electrochemical hydrogenated TiO2 nanotube arrays decorated with 3D cotton-like porous MnO2 enables superior supercapacitive performance
RSC Advances 7, 50() 31512-31518
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Strong Amplified Spontaneous Emission from High Quality GaAs1-xSbx Single Quantum Well Nanowires
Journal of Physical Chemistry C 121, 15() 8636-8644
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Dopant-Free Twinning Superlattice Formation in InSb and InP Nanowires
Physica Status Solidi: Rapid Research Letters 11, 11() 6
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The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors
Nanotechnology 28, 45() 454001 8
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A Terahertz Controlled-NOT Gate Based on Asymmetric Rotation of Polarization in Chiral Metamaterials
Advanced Optical Materials 5, 18() 1700108 7
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Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires
Journal of Physical Chemistry C 121, 30() 16650-16656
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The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires
Journal of Physics D: Applied Physics 50, 22()
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Growth and optical properties of InxGa1-xP nanowires synthesized by selective-area epitaxy
Nano Research 10, 2() 672-682
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Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry
Nano Letters 17, 2() 827-833
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Choice of Polymer Matrix for a Fast Switchable III-V Nanowire Terahertz Modulator
MRS Advances 2, 28() 1475-1480
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Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors
Nanotechnology 28, 12() 9
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Large-scale statistics for threshold optimization of optically pumped nanowire lasers
Nano Letters 17, 8() 4860-4865
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Engineering the Photoresponse of InAs Nanowires
ACS Applied Materials and Interfaces 9, 50() 43993-44000
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Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy
PNAS - Proceedings of the National Academy of Sciences of the United States of America 114, 49() 12876-12881
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An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires
Nano Letters 17, 4() 2603-2610
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Integration of Semiconductor Nanowire Lasers with Polymeric Waveguide Devices on a Mechanically Flexible Substrate
Nano Letters 17, 10() 5990-5994
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InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 µm wavelength range
Nanoscale 9, 36() 13554-13562
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Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs quantum well laser structures
ECS Journal of Solid State Science and Technology 6, 8() 122-126
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Nonlinear Optical Magnetism Revealed by Second-Harmonic Generation in Nanoantennas
Nano Letters 17, 6() 3914-3918
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The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes
Indian Journal of Pure & Applied Physics 55, 5() 333-338
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Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires
Physical Review B 95, 4()
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Nonconservative dynamics of optically trapped high-aspect-ratio nanowires
Physical Review E 93, 2() 1-7
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Long-Lived Hot Carriers in III-V Nanowires
Nano Letters 16, 5() 3085-3093
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Mirror-twin induced bicrystalline InAs nanoleaves
Nano Research 9, 3() 766-773
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Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays
Scientific Reports 6()
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Temperature-dependent side-facets of GaAs nanopillars
Semiconductor Science and Technology 31, 9()
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Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating
Nano Energy 28, -() 106-114
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Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks
Nano Letters 16, 7() 4189-4193
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Single nanowire green InGaN/GaN light emitting diodes
Nanotechnology 27, 43() 1-7
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High-Brightness Polarized Green InGaN/GaN Light-Emitting Diode Structure with Al-Coated p-GaN Grating
ACS Photonics 3, 10() 1912-1918
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Structural transition, subgap states, and carrier transport in anion-engineered zinc oxynitride nanocrystalline films
Applied Physics Letters 109, 2() 1-5
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Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires
Nano Letters 16, 10() 6213-6221
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Transfer Printing of Semiconductor Nanowires with Lasing Emission for Controllable Nanophotonic Device Fabrication
ACS Nano 10, 4() 3951-3958
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Simultaneous Selective-Area and Vapor−Liquid−Solid Growth of InP Nanowire Arrays
Nano Letters 16, 7() 4361-4367
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Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires
Nano Letters 16, 3() 1911-1916
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Thermal Delocalization of Excitons in GaAs/AlGaAs Quantum Well Tube Nanowires
Nano Letters 16, 2() 1392-1397
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Robust Sub-Monolayers of Co3O4 Nano-Islands: A Highly Transparent Morphology for Efficient Water Oxidation Catalysis
Advanced Energy Materials 6, 15()
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Nonlinear Generation of Vector Beams from AlGaAs Nanoantennas
Nano Letters 16, 11() 7191-7197
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Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers
Nano Letters 16, 8() 5080-5086
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Enhanced luminescence from GaN nanopillar arrays fabricated using a top-down process
Nanotechnology 27, 6() 1-6
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Bandgap Energy of Wurtzite InAs Nanowires
Nano Letters 16, 8() 5197-5203
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Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors
Nano Letters 16, 8() 4925-4931
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Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
Nature Communications 7()
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Single nanowire photoconductive terahertz detectors
Nano Letters 15, 1() 206-210
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Mode Profiling of Semiconductor Nanowire Lasers
Nano Letters 15, 8() 5342-5348
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Micrometer-Scale Deep-Level Spectral Photoluminescence from Dislocations in Multicrystalline Silicon
IEEE Journal of Photovoltaics 5, 3() 799-804
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Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes
Nano Letters 15, 3() 1876-1882
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Quantum confinement of excitons in wurtzite InP nanowires
Journal of Applied Physics 117, 19() 1-4
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Controlling the morphology, composition and crystal structure in gold-seeded GaAs1-xSbx nanowires
Nanoscale 7, 11() 4995-5003
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Optical design of nanowire absorbers for wavelength selective photodetectors
Scientific Reports 5()
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Temperature dependence of interband transitions in wurtzite InP nanowires
ACS Nano 9, 4() 4277-4287
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Antimony Induced {112}A Faceted Triangular GaAs1-xSbx/InP Core/Shell Nanowires and Their Enhanced Optical Quality
Advanced Functional Materials 25, 33() 5300-5308
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Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping
Nano Letters 15, 5() 3017-3023
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Spontaneous formation of core-shell GaAsP nanowires and their enhanced electrical conductivity
Journal of Materials Chemistry C: materials for optical and electronic devices 3, 8() 1745-1750
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Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering
Advanced Materials 27, 40() 6096-6103
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Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Localization
Nano Letters 15, 12() 7847-7852
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Zn3As2 Nanowires and Nanoplatelets: Highly Efficient Infrared Emission and Photodetection by an Earth Abundant Material
Nano Letters 15, 1() 378-385
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Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires
Nanoscale 7, 39() 16266-16272
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InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology
Nanotechnology 26, 20() 1-10
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An Order of Magnitude Increase in the Quantum Efficiency of (AI)GaAs Nanowires Using Hybrid Photonic-Plasmonic Modes
Nano Letters 15, 1() 307-312
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Determination of Young's Modulus of Ultrathin Nanomaterials
Nano Letters 15, 8() 5279-5283
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Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Localization
Nano Letters 15, 12() 7847-7852
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Low ensemble disorder in quantum well tube nanowires
Nanoscale 7, 48() 20531-20538
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Room temperature GaAsSb single nanowire infrared photodetectors
Nanotechnology 26, 44()
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Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells
Applied Physics Letters 106, 5() 1-5
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Influence of Electrical Design on Core-Shell GaAs Nanowire Array Solar Cells
IEEE Journal of Photovoltaics 5, 3() 854-864
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Polarized light absorption in wurtzite InP nanowire ensembles
Nano Letters 15, 2() 998-1005
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"Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires"
Nano Letters 14, 10() 5989-5994
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Effect of active region position in Fabry-Perot single transverse mode broad-waveguide InGaAsP/InP lasers
Optics Express 22, 7() 8156-8164
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Second-order surface-plasmon assisted responsivity enhancement in germanium nano-photodetectors with bull's eye antennas
Optics Express 22, 13() 15949-15956
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Carrier thermalization dynamics in single zincblende and wurtzite InP nanowires
Nano Letters 14, 12() 7153-7160
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Understanding the true shape of Au-catalyzed GaAs nanowires
Nano Letters 14, 10() 5865-5872
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Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors with bandpass guided-mode resonance filters
Physica Status Solidi: Rapid Research Letters 8, 1() 69-73
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Atomic-scale observation of parallel development of super elasticity and reversible plasticity in GaAs nanowires
Applied Physics Letters 104, 2() 1-4
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Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Nano Letters 14, 9() 5206-5211
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Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition
Applied Physics Letters 104, 2() 022108
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Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors
Nano Letters 14, 1() 94-100
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Nanowires grown on InP (100): Growth Directions, Facets, Crystal Structures, and Relative Yield Control
ACS Nano 8, 7() 6945-6954
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Magneto-optical properties of wurtzite-phase InP nanowires
Nano Letters 14, 8() 4250-4256
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Illuminating the second conduction band and spin-orbit energy in single wurtzite InP nanowires
Nano Letters 13, 11() 5367-5372
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Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Journal of Physical Chemistry C 117, 37() 19234-19238
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Three-dimensional in situ photocurrent mapping for nanowire photovoltaics
Nano Letters 13, 4() 1405-1409
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Optically pumped room-temperature GaAs nanowire lasers
Nature Photonics 7, 12() 963-968
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Titanium Nano-Antenna for High-Power Pulsed Operation
Journal of Lightwave Technology 31, 15() 2459-2466
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Journal of Lightwave Technology 31, 15() 2459-2466
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Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate
Applied Physics Letters 103, 22()
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Design considerations for semiconductor nanowire-plasmonic nanoparticle coupled systems for high quantum efficiency nanowires
Small 9, 23() 3964-3969
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Integration of bandpass guided-mode resonance filters with mid-wavelength infrared photodetectors
Journal of Physics D: Applied Physics 46, 9() 1-8
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Journal of Crystal Growth 383() 100-105
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Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
Physica Status Solidi: Rapid Research Letters 7, 10() 911-914
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Origin and transport properties of two-dimensional electron gas at ZnMgO/ZnO interface grown by MOVPE
Physica Status Solidi C 10, 10() 1268-1271
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Nano Letters 13, 9() 4280-4287
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Polarity-driven 3-fold symmetry of GaAs/AlGaAs core multishell nanowires
Nano Letters 13, 8() 3742-3748
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Applied Physics Letters 102, 20() 1-5
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Resolving stable axial trapping points of nanowires in an optical tweezers using photoluminescence mapping
Nano Letters 13, 3() 1185-1191
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Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate
Applied Physics Letters 103, 22()
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Periodic dielectric structures for light-trapping in InGaAs/GaAs quantum well solar cells
Optics Express 21, 9() A324-A335
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Resolving stable axial trapping points of nanowires in an optical tweezers using photoluminescence mapping
Nano Letters 13, 3() 1185-1191
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Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Journal of Physical Chemistry C 117, 37() 19234-19238
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The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells
Progress in Photovoltaics: Research and Applications 21, 4() 736-746
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Quantitative dopant distributions in GaAs nanowires using atom probe tomography
Ultramicroscopy 132() 186-192
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Ultramicroscopy 132() 186-192
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Ultramicroscopy 124() 96-101
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Scripta Materialia 69, 8() 638-641
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Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing
Nano Letters 13, 9() 4369-4373
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Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers
Optics Express 21, 7() 8276-8285
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ACS Nano 7, 9() 8105-8114
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Acta Materialia 61, 19() 7166-7172
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Ultramicroscopy 124() 96-101
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Nano Letters 13, 7() 3169-3172
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Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
Nanotechnology 24, 21() 7
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Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes
Nano Letters 13, 3() 1016-1022
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Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique
Applied Physics Letters 102, 3() 1-4
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Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell Nanowires through shell growth optimization
Nano Letters 13, 11() 5135-5140
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A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination
Applied Physics Letters 102, 21() 1-4
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Polarity-driven Nonuniform Composition in InGaAs Nanowires
Nano Letters 13, 11() 5085-5089
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Nano Letters 13, 11() 5085-5089
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High vertical yield InP nanowire growth on Si(111) using a thin buffer layer
Nanotechnology 24, 46() 9
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Phase separation induced by Au catalysts in ternary InGaAs nanowires
Nano Letters 13, 2() 643-650
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Removal of Surface States and Recovery of Band-Edge Emission in InAs Nanowires through Surface Passivation
Nano Letters 12, 7() 3378-3384
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Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
Nanoscale Research Letters 7, 1() 1-6
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Direct-write non-linear photolithography for semiconductor nanowire characterization
Nanotechnology 23, 33() 1-5
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Transient Rayleigh scattering: A new probe of picosecond carrier dynamics in a single semiconductor nanowire
Nano Letters 12, 10() 5389-5395
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Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
Nanoscale Research Letters 7, 1() 1-6
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Spin-resolved purcell effect in a quantum dot microcavity system
Nano Letters 12, 7() 3455-3459
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Raman probing of competitive laser heating and local recrystallization effect in ZnO nanocrystals
Biomedical Optics Express 20, 21() 23281-23289
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Nano Letters 12, 12() 6293-6301
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Polarization Tunable, Multicolor Emission from Core-Shell Photonic III-V Semiconductor Nanowires
Nano Letters 12, 12() 6428-6431
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Ultrafast Dynamics of Exciton Formation in Semiconductor Nanowires
Small 8, 11() 1725-1731
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Scientific Reports 2()
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Crystal Growth & Design 12, 4() 2018-2022
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Crystal Growth & Design 12, 4() 2018-2022
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Defect-Free < 110 > Zinc-Blende Structured InAs Nanowires Catalyzed by Palladium
Nano Letters 12, 11() 5744-5749
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A plasmonic staircase nano-antenna device with strong electric field enhancement for surface enhanced Raman scattering (SERS) applications
Journal of Physics D: Applied Physics 45, 30() 1-5
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The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors
Journal of Applied Physics 111, 12()
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Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy
Nano Letters 12, 10() 5325-5330
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Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires
Applied Physics Letters 101, 2() 02311-1 to 02311-4
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Nanoscale Research Letters 7, 1() 486-486
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Liquid crystal based nonlinear fishnet metamaterials
Applied Physics Letters 100, 12() 121113-1-4
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Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates
Nanotechnology 23, 41() 1-11
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Physical Review B: Condensed Matter and Materials 86, 16() 1-13
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Plasmonic quantum dot solar cells for enhanced infrared response
Applied Physics Letters 100, 10() 1 - 4
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Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process
Nanotechnology 23, 11() 115603-115603
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Physical Review B 85, 17() 1-8
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Journal of Applied Physics 112, 11() 1-11
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Taper-free and Vertically Oriented Ge Nanowires on Ge/Si Substrates Grown by a Two-Temperature Process
Crystal Growth & Design 12, 1() 135-141
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Physical Review B: Condensed Matter and Materials 85, 17() 1-8
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Journal of Applied Physics 109, 6() 064905 6
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IEEE Journal of Quantum Electronics 47, 5() 577-590
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Applied Physics Letters 98, 18() 183509/1-3
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Nano Letters 11, 9() 3899-3905
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Current Applied Physics 11, 3() S171-S174
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Journal of the Electrochemical Society 158, 3() H281-H284
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Nano Letters 11, 10() 4149-4153
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Nano Letters 11, 4() 1546-1549
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Advanced Materials Research 23, 11() 1356-1360
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Nano Letters 11, 10() 4149-4153
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Nano Letters 11, 6() 2375-2381
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Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18() 2690-2697
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Photomodulated Rayleigh Scattering of Single Semiconductor Nanowires: Probing Electronic Band Structure
Nano Letters 11, 10() 4329-4336
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Characterization of Semiconductor Nanowires Using Optical Tweezers
Nano Letters 11, 6() 2375-2381
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Physical Review B 84, 24() 1-5
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III-V compound semiconductor nanowires for optoelectronic device applications
International Journal of High Speed Electronics and Systems 20, 1() 131-141
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Applied Physics Letters 99, 26() 1-4
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Journal of Physics D: Applied Physics 44, 47() 1-7
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Three-dimensional electronic spectroscopy of excitons in asymmetric double quantum wells
Journal of Chemical Physics 135, 4() 1-9
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Semiconductor Science and Technology 26, 1() 1-10
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Journal of Lightwave Technology 29, 18() 2690-2697
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III-V semiconductor nanowires for optoelectronic device applications
Progress in Quantum Electronics 35, 2-3() 23-75
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Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures via Sb exposure
Applied Physics Letters 99, 19() 1-3
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Crystal Growth & Design 11, 7() 3109-3114
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Crystal Growth and Design 11, 7() 3109-3114
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Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 17, 4() 766-778
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Progress in Quantum Electronics 35, 2-3() 23-75
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Journal of Physics D: Applied Physics 43, 33() 8
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Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires
Nano Letters 10, 3() 880-886
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Tilted response of fishnet metamaterials at near-infrared optical wavelengths
Physical Review B: Condensed Matter and Materials 81, 11() 6
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A new optical front-end compensation technique for suppression of spurious signal in photoreflectance spectroscopy using an antiphase signal
Review of Scientific Instruments 81, 4() 43102-43102
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Nano Letters 10, 3() 880-886
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Increasing the coupling efficiency of a microdisk laser to waveguides by using well designed spiral structures
Journal of Applied Physics 107, 4() 043105-1 - 043105-8
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The temperature dependence of InGaAs single-wavelength quantum well and multi-wavelength quantum dot square resonator microlasers
Journal of Physics D: Applied Physics 43, 13() 135102/ 1-6
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Probing valence band structure in wurtzite InP nanowires using excitation spectroscopy
Applied Physics Letters 97, 2()
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Tunable, high beam quality and narrow linewidth semiconductor disk laser
Optical Engineering 49, 10() 5
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Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition
Applied Physics Letters 97, 22() 3
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Third generation biosensing matrix based on Fe-implanted ZnO thin film
Applied Physics Letters 97, 13() 3
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Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
Journal of Physics D: Applied Physics 43, 44() 1-6
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Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
Journal of Physics D: Applied Physics 43, 44() 1-6
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Near-field studies of arrays of chirped subwavelength apertures
Physica Status Solidi: Rapid Research Letters 4, 10() 253-255
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Emission wavelength extension of mid-infrared InAsSb/InP nanostructures using InGaAsSb sandwich layers
Journal of Physics D: Applied Physics 43, 30() 5
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Using graded barriers to control the optical properties of ZnO/ Zn 0.7 Mg0.3 O quantum wells with an intrinsic internal electric field
Applied Physics Letters 96, 19() 3
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The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Nanoscale 2, 7() 1128-1133
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Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy
Applied Physics Letters 97, 4() 3
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Semiconductor Science and Technology 25, 5() 7
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Performance assessment of hybrid surface emitting lasers with lateral one-dimensional photonic-crystal mirrors
Journal of the Optical Society of America B 27, 4() 806-817
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Single-crystalline hexagonal ZnO microtube optical resonators
Journal of Materials Chemistry 20, 26() 5510-5515
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Applied Physics Letters 97, 12() 3
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Journal of Nanoscience and Nanotechnology 10, 3() 1525-1536
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CdS/CdSe lateral heterostructure nanobelts by a two-step physical vapor transport method
Nanotechnology 21, 14() 145602-145602
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Nano Letters 10, 3() 908-915
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Novel growth and properties of GaAs nanowires on Si substrates
Nanotechnology 21, 3() 1-6
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Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer
Applied Physics Letters 96, 21() 3
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Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers
Nanotechnology 21, 29() 295602-295602
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Novel growth and properties of GaAs nanowires on Si substrates
Nanotechnology 21, 3() 1-6
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Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
Journal of Applied Physics 105, 073503() 1-4
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Nanoscale Research Letters 4, 8() 846-849
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Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy
Nano Letters 9, 9() 3349-3353
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Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures
Angewandte Chemie International Edition 48, 4() 780-783
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Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
Journal of Applied Physics 105, 073503() 1-4
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Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy
Nano Letters 9, 9() 3349-3353
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Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Nanoscale Research Letters 4, 8() 846-849
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Journal of Applied Physics 106, 083514() 1-4
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Small 5, 3() 366-369
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Angewandte Chemie International Edition 48, 4() 780-783
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Small 5, 3() 366-369
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Journal of Applied Physics 106, 083514() 1-4
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Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing
Journal of Luminescence 129, 2() 153-157
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Nano Letters 9, 2() 648-654
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Combined optical trapping and microphotoluminescence of single InP nanowires
Applied Physics Letters 95, 10() 101109-1 - 101109-3
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Journal of Physics D: Applied Physics 42, 9() 8
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Directional Optically Pumped Laterally Coupled DFB Lasers With Circular Mirrors
Journal of Lightwave Technology 27, 11() 1425-1433
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Large Square Resonator Laser With Quasi-Single-Mode Operation
IEEE Photonics Technology Letters 21, 6() 359-361
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Nanosheets-Based Rhombohedral In2O3 3D Hierarchical Microspheres: Synthesis, Growth Mechanism, and Optical Properties
Journal of Physical Chemistry C 113, 24() 10511-10516
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Nanotechnology 20, 22() 7
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Whispering gallery modes in indium oxide hexagonal microcavities
Applied Physics Letters 94, 173115() 1-3
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Journal of Physics D: Applied Physics 42, 11() 5
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Recombination dynamics and screening of the internal electric field in ZnO/ZnxMg1-xO multiple quantum wells
Physical Review B: Condensed Matter and Materials 80, 23() 6
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Enhanced transmission of light through periodic and chirped lattices of nanoholes
Optics Communications 282() 2023-2027
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Nano Letters 9, 2() 695-701
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Room temperature photocurrent spectroscopy of single zincblende and wurtzite InP nanowires
Applied Physics Letters 94, 19() 3
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Journal of Lightwave Technology 27, 22() 5090-5098
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Applied Physics Letters 95, 013108() 1-3
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Journal of the Optical Society of America B 26, 7() 1417-1422
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Applied Physics Letters 95, 14() 143124-143124/3
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Applied Physics Letters 93, 101911() 1-3
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Applied Physics Letters 93, 101911() 1-3
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Applied Physics Letters 93, 201908() 1-3
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Applied Physics Letters 93, 201908() 1-3
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Tuning the bandgap of InAs quantum dots by selective-area MOCVD
Journal of Physics D: Applied Physics 41, 085104() 1-4
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Physical Review B: Condensed Matter and Materials 78, 3() 1-5
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Applied Physics Letters 92, 021104() 1-3
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European Physical Journal B 62() 65-70
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Nanotechnology 19, 125602() 1-6
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Applied Physics Letters 93, 5() 1-3
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Journal of Physics D: Applied Physics 41, 205107() 1-6
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Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing
Nanotechnology 19, 5() 1-4
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Journal of Applied Physics 104, 053113() 1-7
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Journal of Optoelectronics and Advanced Materials 10, 2() 323-326
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Journal of the Optical Society of America B 25, 9() 1532-1536
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Applied Physics Letters 93, 1() 1-3
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Journal of Applied Physics 104, 2() 1-11
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Journal of Lightwave Technology 26, 11() 1374-1380
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Journal of Physics D: Applied Physics 41, 215101() 1-7
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Advanced Functional Materials 18() 3794-3800
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Applied Physics Letters 92, 19() 1-3
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Nano Letters 7, 7() 2162-2165
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Nano Letters 7, 7() 2162-2165
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Small 3, 11() 1873-1877
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Applied Physics Letters 91, 13() 133115 1-3
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Applied Physics Letters 91, 13() 133115 1-3
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Nano Letters 7, 11() 3383-3387
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Small 3, 11() 1873-1877
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Small 3, 3() 389-393
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Applied Physics Letters 90() 171104 1-3
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Nano Letters 7, 4() 921-926
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Small 3, 3() 389-393
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Nanotechnology 18() 315403 1-5
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Journal of Physics: Condensed Matter 19() 386213/ 1-10
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Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells
Applied Physics Letters 90() 221914/ 1-3
, , , , , ,
Carrier dynamics in p-type InGaAs/GaAs quantum dots
Journal of Materials Science: Materials in Electronics 18() S363-S365
, ,
Comparison of proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots
Nanotechnology 18() 175305 1-4
, , , ,
Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures
Semiconductor Science and Technology 22() 988-992
, , , ,
In-plane coupling of light from InP-based photonic crystal band-edge lasers into single-mode waveguides
IEEE Journal of Quantum Electronics 43, 4() 279-286
, , , , ,
Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition
Applied Physics Letters 91() 073515 1-3
, , , , ,
Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
Nanoscale Research Letters 2() 550-553
, , ,
Impurity-free disordering of InAs/InP quantum dots
Applied Physics Letters 90() 243114 1-3
, ,
High temperature rapid thermal annealing of phosphorous ion implanted InAs/InP quantum dots
Applied Physics Letters 90() 093106 1-3
, ,
Analysis of optically pumped compact laterally coupled distributed feedback lasers with three symmetric defect regions
Journal of Applied Physics 102() 083109 1-8
, , , , ,
An ion-implanted InP receiver for polarization resolved terahertz spectroscopy
Optics Express 15, 11() 1-11
, , , , ,
Effects of a p-n junction on heterojunction far infrared detectors
Infrared Physics and Technology 50() 274-278
, , , , , , , , ,
Resonant Excitation and Imaging of Nonequilibrium Exciton Spins in Single Core-Shell GaAs-AlGaAs Nanowires
Nano Letters 7, 3() 588-595
, , , , , ,
Epitaxial Germanium Nanowires on GaAs Grown by Chemical Vapor Deposition
Journal of the Korean Physical Society 51, 1() 120-124
, , , , , , , , , ,
Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
Applied Physics Letters 91() 263104 1-3
, , , , , , ,
Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process
Nano Letters 7, 4() 921-926
, , ,
Influence of quantum well and barrier composition on the spectral behavior in InGasAs quantum dots-in-a-well infrared photodetectors
Applied Physics Letters 91() 173508 1-3
, , ,
Effect of Auger Recombination on the Performance of p-doped Quantum Dot Lasers
Applied Physics Letters 88() 161121-1-3
, , , , , ,
Influence of Surface Passivation on Ultrafast Carrier Dynamics and Terahertz Radiation Generation in GaAs
Applied Physics Letters 89, 23() 232201-1-3
, , , , , , ,
Carrier Transfer and Magneto-transport in Single Modulation-doped V-grooved Quantum Wire modified by Ion Implantation
Journal of Luminescence 119-120() 198-203
, ,
Integration of an InGaAs Quantum-Dot Laser with a Low-Loss Passive Waveguide using Selective-Area Epitaxy
IEEE Photonics Technology Letters 18, 15() 1648-1650
, , , , , , ,
Influence of Nanowire Density on the Shape and Optical Properties of Ternary InGaAs Nanowires
Nano Letters 6, 4() 599-604
, , , , , , ,
Quantum Dots and Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 12, 6() 1242-1254
, , , , , , , ,
Temperature Dependence of Photoluminescence from Single Core-shell GaAs-AlGaAs Nanowires
Applied Physics Letters 89, 17() 173126-1-3
, , ,
A Transmission Electron Microscopy Study of Defects formed through the Capping Layer of Self-assembled InAs/GaAs Quantum Dot Samples
Journal of Applied Physics 99, 11() 113503-1-8
, , ,
The Role of Arsine in the Self-assembled Growth of InAs/GaAs Quantum Dots by Metal Organic Chemical Vapor Deposition
Journal of Applied Physics 99, 4() 044908-1-5
, , ,
Modeling and Characterization of InAs/GaAs Quantum Dot Lasers grown using Metal Organic Chemical Vapor Deposition
Journal of Applied Physics 101, 1() 013112-1-9
, , , , , ,
Structural characteristics of GaSb/GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition
Applied Physics Letters 89, 23() 231917-1-3
, , , ,
Selective Wavelength Tuning of Self-assembled InAs Quantum Dots grown on InP
Applied Physics Letters 88, 19() 193112-1-3
, ,
Comparison of InAs Quantum Dots Grown on GaInAsP and InP
Nanotechnology 17() 1867-1870
, , , , , , ,
Micro-photoluminescence Confocal Mapping of Single V-grooved GaAs Quantum Wire
Chinese Physics Letters 23, 12() 3341-3344
, ,
Proton Implantation-induced Intermixing of InAs/InP Quantum Dots
Applied Physics Letters 88, 22() 223101-1-3
, , , , , , , , , ,
Observation of Coherent Biexcitons in ZnO/ZnMgO Multiple Quantum Wells at Room Temperature
Applied Physics Letters 89, 18() 182109-1-3
, , , , , , , ,
Observation of Blue Shifts in ZnO/ZnMgO Multiple Quantum Well Structures by Ion-implantation Induced Intermixing
Semiconductor Science and Technology 21() L25-L28
, , , , , ,
Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors
Journal of Applied Physics 99, 11() 114517-1-8
, , , , , ,
Structural characteristics of GaSb/GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition
Applied Physics Letters 89, 23() 231917-1-3
, , , ,
Effect of Rapid Thermal Annealing on the Atomic Intermixing of Zn- and C-Doped InGaAs/AlGaAs Quantum Well Laser Structures
Journal of the Electrochemical Society 153, 9() G879-G882
, , , , ,
On Quantifying the Group-V to Group-III Interdiffusion Rates in InxGa1-xAs/InP Quantum Wells
Semiconductor Science and Technology 21() 829-832
, , , , , , ,
Proton Irradiation-induced Intermixing in InxGa1-xAs/InP Quantum Wells - the Effect of In Composition
Semiconductor Science and Technology 21() 1441-1446
, , ,
InAs Quantum Dots Grown on InGaAs Buffer Layers by Metal-Organic Chemical Vapor Deposition
Journal of Crystal Growth 281() 290-296
, ,
Growth of Highly Strained InGaAs Quantum Wells on GaAs Substrates - Effect of Growth Rate
Journal of Crystal Growth 274() 85-89
, , , ,
Ion Irradiation-induced Disordering of Semiconductors: Defect Structures and Applications
Philosophical Magazine 85, 4-7() 677-687
, , , , ,
Controlling the Properties of InGaAs Quantum Dots by Selective-Area Epitaxy
Applied Physics Letters 86, 11() 113102-1-3
, , , ,
In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition
IEEE Electron Device Letters 26, 9() 628-630
, , ,
Room-Temperature Preperation of InGaAsN Quantum Dot Lasers Grown by MOCVD
Electrochemical and Solid-State Letters 8, 2() G57-G59
, , , ,
Thermal Stability of Ion-Implanted ZnO
Applied Physics Letters 87, 23() 231912-1-3
, , , , ,
Polarization-Sensitive Terahertz Detection by Multicontact Photoconductive Receivers
Applied Physics Letters 86, 25() 254102-1-3
, , , , ,
Study of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration
IEE Proceedings - Circuits, Devices and Systems 152, 5() 491-496
, , ,
Investigation of the Blueshift in Electroluminescence Spectra from MOCVD Grown InGaAs Quantum Dots
IEEE Journal of Quantum Electronics 40, 10() 1410-1416
, , ,
Characteristics of MOCVD-Grown Thin p-Clad InGaAs Quantum-Dot Lasers
IEEE Photonics Technology Letters 16, 12() 2589-2591
, ,
Impurity Free Vacancy Disordering of InGaAs Quantum Dots
Journal of Applied Physics 96, 12() 7544-7548
, ,
InGaAs Quantum Dots Grown with GaP Strain Compensation Layers
Journal of Applied Physics 95, 10() 5710-5714
, , ,
Optical properties of erbium-implanted porous silicon microcavities
Applied Physics Letters 85, 16() 3363-3365
, , , , , ,
A Partially Depleted Absorber Photodiode with Graded Doping Injection Regions
IEEE Photonics Technology Letters 16, 10() 2326-2328
, , , , , , , ,
Structural, Electrical, and Optical Analysis of Ion Implanted Semi-insulating InP
Journal of Applied Physics 95, 2() 477-482
, , , ,
Implant Isolation of AlGaAs Multilayer DBR
Nuclear Instruments and Methods in Physics Research: Section B 218() 381-385
, , , ,
Supression of Thermal Atomic Interdiffusion in C-doped InGaAs/AIGaAs Quantum Well Laser Structures using TiO2 Dielectric Layers
Applied Physics Letters 85, 23() 5583-5585
, , ,
Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots
Applied Physics Letters 84, 24() 4950-4952
, , , , , , ,
Picosecond Time-Resolved Bleaching Dynamics of Self-Assembled Quantum Dots
IEEE Transactions on Nanotechnology 3, 3() 348-352
, , , , , ,
Metalorganic Chemical Vapor Deposition of GaAsN Epilayers: Microstructures and Optical Properties
Journal of Crystal Growth 264() 92-97
, , , , , ,
Enhanced Optical Properties of the GaAsN/GaAs Quantum-Well Structure by the Insertion of InAs Monolayers
Applied Physics Letters 84, 14() 2536-2538
, , ,
Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition
Japanese Journal of Applied Physics 42() 6827-6832
, , , , ,
Suppression of Interdiffusion in InGaAs/GaAs Quantum Dots using Dielectric Layer of Titanium Dioxide
Applied Physics Letters 82, 16() 2613-2615
, , ,
Implantation-induced Electrical Isolation of GaAsN Epilayers Grown by Metalorganic Chemical Vapor Deposition
Applied Physics Letters 83, 16() 3386-3388
, , , , , , , ,
Determination of Carrier-transfer Length from Side-wall Quantum Well to Quantum Wire by Micro-photoluminescence Scanning
Journal of Electronic Materials 32, 8() 913-916
, , , , , , ,
Epitaxially Grown GaAsN Random Laser
Journal of Applied Physics 93, 10() 5855-5858
, , , ,
Towards a Better Understanding of the Operative Mechanisms Underlying Impurity-free Disordering of GaAs: Effect of Stress
Journal of Vacuum Science and Technology B 21, 1() 198-203
, , , ,
Passively mode-locked, self-frequency doubled, diode-pumped Yb:YAl3(BO3)4 laser
Journal of Environmental Chemical Engineering 71() 158-160
, , , ,
Proton-Irradiation-Induced Intermixing in InGaAs Quantum Dots
Applied Physics Letters 82() 2053-2055
, , , , , ,
Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures
Journal of the Electrochemical Society 150, 8() G481-G487
, , ,
Characterization of Deep Level Traps Responsible for Isolation of Proton Implanted GaAs
Journal of Applied Physics 93, 6() 3234-3238
, , , ,
Low Loss, Thin p-clad 980-nm InGaAs Semiconductor Laser Diodes with an Asymmetric Structure Design
IEEE Journal of Quantum Electronics 39, 5() 625-633
, ,
Electrical Characterization of Impurity-free Disordering-induced Defects in n-GaAs using Native Oxide Layers
Applied Physics A: Materials Science and Processing 76() 961-964
, ,
Electrical Isolation of n- and p-In0.53Ga0.47As Epilayers using Ion Irradiation
Journal of Applied Physics 94, 10() 6616-6620
, , , ,
Improvement of the Kink-free Operation in Ridge-waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge
IEEE Photonics Technology Letters 15, 12() 1686-1688
, , ,
A Comparison of Low-energy As Ion Implantation and Impurity-free Disordering Induced Defects in N-type GaAs Epitaxial Layers
Japanese Journal of Applied Physics 42, 3() 1158-1163
, ,
Influence of Cap Layer on Implantation Induced Interdiffusion in InP/InGaAs Quantum Wells
Journal of Applied Physics 93, 8() 4468-4470
, , , ,
Ultrafast carrier trapping and recombination in highly resistive ion implanted InP
Journal of Applied Physics 94, 2() 1074-1078
, , , ,
Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
Applied Physics Letters 82, 22() 3913-3915
, , , , , , , , ,
Passive Mode Locking of a Self-frequency-doubling Yb:Yal3 (BO3)4 Laser
Optics Letters 27, 6() 436-438
, , ,
Electrical Isolation of AlxGa1-xAs by Ion Irradiation
Applied Physics Letters 80() 264-266
, , , ,
On the Nature of Radiative Recombination in GaAsN
Applied Physics Letters 81, 23() 4368-4370
,
Electrical isolation of Al xGa 1-xAs by ion irradiation
Applied Physics Letters 80, 2() 264-266
, , , , , ,
Thermally Stimulated Luminescence in Ion-Implanted GaAs
Journal of Luminescence 96() 287-293
, , , , , , , , , ,
Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide
Journal of Applied Physics 92, 7() 3579-3583
, , , , , , , ,
Ultrafast Trapping Times in Ion Implanted InP
Journal of Applied Physics 92, 5() 2420-2423
, , , ,
Atomic Relocation Processes in Impurity-Free Disordered p-GaAs Epilayers Studied by Deep Level Transient Spectroscopy
Applied Physics Letters 81, 19() 3573-3575
, , , , , ,
Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers
Applied Physics Letters 80, 23() 4351-4353
, , , , ,
Study of Intermixing in a GaAs/AlGaAs Quantum-well Structure using Dope Spin-on Silica Layers
Applied Physics Letters 80, 7() 1171-1173
, , , , ,
Application of Selective Implantation in AIGaAs/InGaAs/GaAs Pseudomorphic Single Quantum Wire Structures
Nanotechnology 1() 389-392
, , , , , , , , ,
Evidence of Blocking Effect on Carrier Trapping Process by Necking Region in a Very Narrow AIGaAs/GaAs V-grooved Quantum Wire Structure
Journal of Applied Physics 90, 10() 5438-5440
, , , , , , , , , ,
Carrier transfer between V-grooved quantum wire and vertical quantum well
Physics Letters A 280() 77-80
,
Application of Selective Implantation in Al 0.5Ga 0.5As/In 0.25Ga 0.75As/GaAs Pseudomorphic Single Quantum Wire Structures
Journal of Nanoscience and Nanotechnology 1, 4() 389-392
, , , , , , ,
The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
Journal of Crystal Growth 222() 786-790
,
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4() 2351-2356
, , , , ,
Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler
Nuclear Instruments and Methods in Physics Research: Section B 173() 528-532
, , , ,
Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking
Journal of Physics D: Applied Physics 34, 16() 2455-2464
, , , , , ,
Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition
Physica B 308-310() 776-779
, , , ,
Possibility of improved frequency response from intermixed quantum-well devices
Superlattices and Microstructures 29, 2() 105-110
, ,
Electrical isolation of n-type and p-type InP layers by proton bombardment
Journal of Applied Physics 89, 10() 5343-5347
, , , , , , ,
Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing
Infrared Physics and Technology 42() 171-175
, , , , , , ,
Tuning the detection wavelength of quantum-well infrared photodetectors by single-high energy implantation
Applied Physics Letters 78, 1() 10-12
, , , , , , , ,
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4() 2351-2356
, , , , ,
Electron and trap dynamics in As-ion-implanted and annealed GaAs
Applied Physics Letters 78, 12() 1667-1669
, , ,
Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
Electrochemical and Solid-State Letters 3() 196-199
, , ,
Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition
Applied Physics Letters 77() 696-698
, , ,
Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers
Journal of Applied Physics 88() 5255-5261
, , , ,
A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells
Journal of Applied Physics 88() 5252-5254
, ,
Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells
Materials Research Society Symposium Proceedings 607() 491-502
, ,
The use of micro-raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1()
, , , ,
Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147, 5() 1950-1956
,
The micro-photoluminescence of a single V-groove GaAs/AlGaAs quantum wire
Wuli Xuebao/Acta Physica Sinica 49, 9() 1812-1813
,
Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures
Japanese Journal of Applied Physics 39, 9 A() 5124-5127
, , ,
Performance comparison of GaAs/AlGaAs quantum well infrared photodetectors grown by MOCVD and MBE
Journal of Environmental Chemical Engineering 21, 5() 441-444
, , ,
Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector
Journal of Environmental Chemical Engineering 19, 1() 25-28
, , , , , ,
Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147() 1950-1956
, ,
Application of high energy implantation in tuning the detection wavelength of quantum well infrared photodetectors
Journal of Environmental Chemical Engineering 1() 88-89
, , , , , , , ,
Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing
Japanese Journal of Applied Physics 39() 1687-1689
, , , , , , ,
Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures
Physics Letters A 271() 213-216
, , , , , , , , , , ,
Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
Journal of Applied Physics 87() 1566-1568
, , , , , ,
Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers
Applied Physics Letters 76() 1306-1308
, , , , , , , , ,
Investigation of AlGaAs/GaAs V-grooved Quantum Wire Infrared
Japanese Journal of Applied Physics 39() 5124-5127
, , , , , , , ,
High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering
Journal of Applied Physics 87() 2736-2741
, , , , ,
Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing
Applied Physics Letters 76() 837-839
, , , , , , ,
Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells
Applied Physics Letters 77() 2867-2869
, , , , , , , ,
Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
Journal of Applied Physics 88() 2519-2522
, ,
Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation
Griffith Asia Quarterly () 355-357
, , ,
Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices
Griffith Asia Quarterly () 352-354
, ,
Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence
Griffith Asia Quarterly () 187-190
, ,
Comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy
Griffith Asia Quarterly () 348-351
, , ,
Application of selective implantation induced intermixing on V-grooved AlGaAs/GaAs coupled quantum wire
Griffith Asia Quarterly () 513-515
, , , ,
Tuning of detection wavelength of GaAs/AlGaAs quantum-well IR photo-detectors by thermal interdiffusion
Griffith Asia Quarterly () 128-130
,
Fabrication and characterization of delta-doped In 0.2Ga 0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy
Griffith Asia Quarterly () 140-143
,
Intermixing induced resonance shift in GaAs/Al xO y DBR resonators
Griffith Asia Quarterly () 365-368
, ,
High power CW output from low confinement asymmetric structure diode laser
Electronics Letters 35, 2() 148-149
, , ,
Ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers
Griffith Asia Quarterly () 105-108
, , ,
Nonlinear optical properties of ion-implanted GaAs
Griffith Asia Quarterly () 151-153
, ,
Interdiffused quantum-well infrared photodetectors for color sensitive arrays
Applied Physics Letters 75, 7() 923-925
, ,
Impurity-free interdiffusion in GaAs/Al 0.54Ga 0.46As multiple quantum wells capped with PECVD SiO x: Effect of nitrous oxide flow
Griffith Asia Quarterly () 361-364
, , , , , ,
Nonlinear Optical Absorption and Temporal Response of Arsenic-and Oxygen-Implantated GaAs
Applied Physics Letters 74, 14() 1993-1995
, , , , , , , , , ,
Wavelength tuning of GaAs/AlGaAs quantum well infrared photodetectors by thermal interdiffusion
Japanese Journal of Applied Physics 38() 5044-5045
, , , ,
Characterization of low-temperature PECVD silicon dioxide films
Materials Research Society Symposium Proceedings 555() 197-202
, , ,
Vertical Integration of Dual Wavelength Index Guided GaAs-Lasers
Electronics Letters 35() 815-817
, , , , , , , , , ,
Interdiffused quantum well infrared photodetector tuning for colour sensitive arrays
Applied Physics Letters 75() 923-925
, , , , , , , , , , ,
Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealing
Applied Physics Letters 75() 3339-3341
, , , , ,
Multipulse Operation of a Ti:sapphire Laser Mode locked by an Ion-Implanted Semiconductor Saturable-Absorber Mirror
Journal of the Optical Society of America B 16, 6() 895-904
, , , , , , , ,
Role of Implantation-Induced Defects on the Response Time of Semiconductor Saturable Absorbers
Applied Physics Letters 75, 10() 1437-1439
, , , , , , ,
Continuous wave operation of low confinement asymmetric structure diode lasers
Electronics Letters 35() 148-149
, ,
Intermixing induced resonance shift in GaAs/AlxOy distributed Bragg resonators
Journal of Applied Physics 85() 7964-7966
, , , ,
Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers
Journal of Applied Physics 85() 6786-6789
, , , , , , ,
Energy Sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As Quantum Wire
Superlattices and Microstructures 26, 5() 307-315
, , ,
Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures
IEEE Journal on Selected Topics in Quantum Electronics 4, 4() 629-634
, ,
Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells
Journal of Applied Physics 83, 3() 1305-1311
, , , ,
Analysis of semiconductors by ion channelling: Applications and pitfalls
Nuclear Instruments and Methods in Physics Research: Section B 136-138() 453-459
, ,
Improved carrier collection in intermixed InGaAs/GaAs quantum wells
Applied Physics Letters 73, 23() 3408-3410
, , ,
An antiresonant Fabry-Perot saturable absorber for passive mode-locking fabricated by metal-organic vapor phase epitaxy and ion implantation design, characterization, and mode-locking
IEEE Journal of Quantum Electronics 34, 11() 2150-2161
,
Annealing of ion implanted gallium nitride
Applied Physics Letters 72, 10() 1190-1192
,
Si-implantation activation annealing of GaN up to 1400?C
Journal of Electronic Materials 27, 4() 179-184

(513 publications)

Conference paper

, , , , , , , , , , , , , , , ,
Switchable unidirectional second-harmonic emission through GaAs nanoantennas
Australian and New Zealand Conferences on Optics and Photonics - ANZCOP 2019 11200()
, , , , , , , , , , , , , , , ,
Infrared imaging in nonlinear GaAs metasurfaces
Australian and New Zealand Conferences on Optics and Photonics - ANZCOP 2019 11201()
, , , ,
CuI-TiO Composite Thin Film for Flexible Electronic Applications
2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018 ?, ?() 22-23
, , , , , , , , , , , , , , ,
Second-harmonic generation in (111) gallium arsenide nanoantennas
2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 ()
, , , , , , , , ,
Engineering III-V Nanowires for optoelectronics: From visible to terahertz
Novel Optical Materials and Applications, NOMA 2019 Part F135-NOMA 2019()
, , , , , , , ,
Precise Positioning and Orientation of Nanowire Lasers in Regular and Patterned Surfaces
18th International Conference on Nanotechnology, NANO 2018 ?, ?()
, , , , , , , , , , ,
Room temperature GaAsSb array photodetectors
1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018 ?, ?() 143-145
, , , , ,
Hybrid-plasmonic gold coated GaAs nanowire lasers
2018 Conference on Lasers and Electro-Optics, CLEO 2018 ?, ?()
, , , ,
CuI-TiO2 Composite Thin Film for Flexible Electronic Applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2018) 0, 0() 22-23
, , , , , , , , , , ,
Engineering III-V nanowires for optoelectronics: From epitaxy to terahertz photonics
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV 2018 ?, ?()
, , , , , , , , , ,
The Route to Nanoscale Terahertz Technology: Nanowire-based Terahertz Detectors and Terahertz Modulators
43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018) 2018-September() 2
, , , , , , , , , , ,
Resonant harmonic generation in AlGaAs nanoantennas using structured light
Nonlinear Photonics, NP 2018 ?, ?()
, , , , , ,
Engineering semiconductor nanowires for photodetection: From visible to terahertz
Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2018 ?, ?()
, , , , , , , , ,
Probing the photophysics of semiconductor nanomaterials using optical pump-terahertz probe spectroscopy: From nanowires to perovskites
Physical Chemistry of Semiconductor Materials and Interfaces XVII 2018 ?, ?()
, , , , , , , , , , ,
Broadband single-nanowire photoconductive terahertz detectors
CLEO: Science and Innovations, CLEO_SI 2017 ?, ?() 2
, , , , , , , , , , , , , , , ,
"Shaping the radiation pattern of second-harmonicgeneration from AlGaAs nonlinear nanoantennas"
Nonlinear Photonics 2016 ?, ?() 2
, , , , ,
Dynamic control of THz waves through thin-film transistor metamaterials
SPIE Micro+Nano Materials, Devices, and Applications Symposium 2015 ?, ?()
, , , , , , , , , ,
InP single nanowire solar cells
Light, Energy and the Environment 2015 ?, ?()
, , , , , ,
Photocurrent spectroscopy of single GaAs/AlGaAs core-multishell nanowire devices
Annual Device Research Conference, DRC 2015 ?, ?() 81-82
, , , , , , , , , , ,
Single nanowire terahertz detectors
CLEO: Science and Innovations, CLEO_SI 2015 15, 1() 206-210
, , , , , , , ,
Anomalous dynamic behaviour of optically trapped high aspect ratio nanowires
Optical Trapping and Optical Micromanipulation XI ?, ?() 91641L 6
, , ,
Broad-linewidth and high-efficiency second harmonic generation in cascaded photonic crystals
The 5th International Conference on Metamaterials, Photonic Crystals and Plasmonics META'14 ?, ?()
, , , , , , , , , , ,
Single GaAs/AlGaAs Nanowire Photoconductive Terahertz Detectors
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 221-222
, , , , , , ,
How InAs Crystal Phase affects the Electrical Performance of InAs Nanowire FETs
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 283-285
, , , , ,
Formation of Intermediate Band in ZnTe: O Highly Mismatched Alloy Synthesized by Ion Implantation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 259-261
, , , , , , , , , ,
MOCVD-grown indium phosphide nanowires for optoelectronics
2013 International Conference on Nanoscience and Nanotechnology, NANO-SciTech 2013 832() 201-205
, , , ,
Palladium catalyzed defect-free <110> zinc-blende structured InAs nanowires
2013 MRS Spring Meeting ?, ?() 95-99
, , ,
Extremely High Short-Circuit Current Density in Vertical Single Nanowire Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 77-78
, , , , , , , ,
Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 272-274
, , , , , , , , , , ,
Selective area epitaxial growth of InP nanowire array for solar cell applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 252-253
, , , , , ,
Top-down approach for fabricating InP nanowires with Ohmic metal contacts
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 3-6
, , , , , , ,
InP-Based Radial Heterostructures Grown on [100] Nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 168-170
, , , , , , , , , ,
Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 286-289
, , , , ,
Sidewall evolution in VLS grown GaAs Nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 87-89
, , ,
Positioning of the active region in broad-waveguide laser for optimized hole injection
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 41-43
, , , , , , ,
Fabrication and Photoluminescence Studies of GaN Nanopillars
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 133-136
, , , , ,
III-V semiconductor nanowire lasers
2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 ?, ?() 217-218
, , , ,
Plasmonic cavities for increasing the radiative efficiency of GaAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 244-245
, , , ,
High quantum efficiency (Al) GaAs nanowires for optoelectronic devices
2014 Summer Topicals Meeting Series, SUM 2014 ?, ?() 13-14
, , , , , , , , ,
Determining wurtzite band structure using optical spectroscopies on single InP nanowires
International Conference on the Physics of Semiconductors ICPS 2012 ?, ?() 476-477
, , , , , , , , ,
Determining wurtzite band structure using optical spectroscopies on single InP nanowires
International Conference on the Physics of Semiconductors ICPS 2012 ?, ?() 476-477
, , , , , ,
Using Spectroscopic Techniques to Interrogate Trapping Dynamics of Nanoscale Objects
Optical Trapping Applications, OTA 2013 ?, ?()
, , , , , , ,
Transient Rayleigh scattering from single semiconductor nanowires
International Conference on the Physics of Semiconductors ICPS 2012 ?, ?() 425-426
, , , , , , , ,
III-V nanowires for optoelectronic applications
International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting 58, 7() 93-98
, , , , , , , , ,
Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes
International Conference on the Physics of Semiconductors ICPS 2012 ?, ?() 516-517
, , , , , ,
Using Spectroscopic Techniques to Interrogate Trapping Dynamics of Nanoscale Objects
Optical Trapping Applications, OTA 2013 ?, ?() 1
, , , , ,
High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
2013 26th IEEE Photonics Conference, IPC 2013 ?, ?() 476-477
, , , , ,
Multi-colour emission from GaAs core-AlGaAs shell photonic nanowires
2013 26th IEEE Photonics Conference, IPC 2013 ?, ?() 153-154
, , , , , , , , , ,
Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy
SPIE Micro+Nano Materials, Devices, and Applications 2013 Conference 8923() 1-6
, , , , , , , , , ,
Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 ?, ?() 1-2
, , , , , , , , ,
Compound semiconductor nanowires for optoelectronic devices
10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 ?, ?() 1-2
, ,
Engineering the morphology and optical properties of InP-based InAsSb/InGaAs nanostructures via Sb exposure and graded growth techniques
2012 MRS Fall Meeting 1509() 92-97
, , , , ,
High repetition frequency mode-locked semiconductor disk laser
International Conference on Data Communication Networking, International Conference on e-Business and International Conference on Optical Communication Systems 2012 ?, ?() 361-364
, , , , , , ,
Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 147-148
, , , , , , ,
III-V nanowires for optoelectronic applications
5th International Conference on Computers and Devices for Communication, CODEC 2012 ?, ?() 1-3
, , ,
Designing single GaAs nanowire lasers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 101-102
, , , , , , , ,
Photomodulated Rayleigh scattering from single semiconductor nanowires
Materials Research Society Fall Meeting 2011 1408() 11-16
, , , ,
Demonstration of a stable and flexible coherent multidimensional spectroscopy apparatus to study coherent coupling in asymmetric double quantum wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 151-152
, , , , ,
Non-linear direct-write lithography for semiconductor nanowire characterisation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 135-136
, , , ,
Picosecond carrier lifetime measurements on a single GaAs nanowire
Conference on Lasers and Electro-Optics (CLEO 2012) ?, ?()
, , , ,
Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 137-138
, , , , , , , ,
Mapping optical process in semiconductor nanowires using dynamic optical tweezers
Optical Trapping and Optical Micromanipulation IX 8458() 1-7
, , ,
Progress towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 49-50
, , , , , ,
Growth of defect-free InAs Nanowires using Pd catalyst
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 31-32
, , , , ,
Magneto-transport Study on the Two Dimensional Electron Gas in ZnMgO/ZnO Heterostructure Grown by MOVPE
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 201-202
, , , , , , ,
Growth and characterization of GaAx1-xSbx nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 141-142
, , , , , , , , , ,
Optoelectronic properties of GaAs nanowire photodector
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 139-140
, , , , , , , ,
Mapping optical process in semiconductor nanowires using dynamic optical tweezers
Optical Trapping and Optical Micromanipulation IX 8458() 1-7
, , , , , ,
PL Mapping and Optimized Optical Trapping of Nanowires SLM beam shaping
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 29-30
, , , , , ,
PL Mapping and Optimized Optical Trapping of Nanowires SLM beam shaping
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 29-30
, , , ,
Effect of plasmonic nanoparticles on the quantum efficiency of lll-V semiconductor nanorwire emitters
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 47-48
, , , , ,
Dielectric Diffraction Gratings for Light-Trapping in InGaAs-GaAs Quantum Well Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 129-130
, , , , , , , , , ,
Nonlinear effects in liquid-crystal-infiltrated fishnet metamaterials
International Congress on Advanced Electromagnetic Materials in Microwaves and Optics 2012 ?, ?() 828-830
, , , , , , , ,
Liquid crystal infiltrated optical magnetic metamaterials
International Congress on Advanced Electromagnetic Materials in Microwaves and Optics 2012 ?, ?() 813-815
, , , , , ,
Growth of InP Nanowires on Silicon Using a Thin Buffer Layer
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 43-44
, , , , ,
Plasmonics for III-V semiconductor solar cells
IEEE Photonics Conference (IPC 2012) ?, ?() 56-57
, , , , ,
Shell formation in InGaAs Nanowires Driven by Lattice Latching and Polarity Effect
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 51-52
, , , , , , , ,
Tuning magnetic metamaterials with liquid crystals
Australian Institute of Physics Congress (AIP 2012) ?, ?() 1
, , , , , , , , , , ,
The Origin of Gate Hysteresis in p-type Si-doped AIGaAs/GaAs Heterostructures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 9-10
, , , , , , , ,
Influence of growth temperature and V/III ratio on Au-assisted InxGa1-xAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 37-38
, , ,
MOCVD growth of GaAs nanowires using Ga droplets
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 39-40
, , , , , ,
Quantification of the zinc dopant concentration in GaAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 41-42
, , , , , , , , ,
Diffusion and Population Dynamics of Excitons in c-axis grown ZnO Quantum Wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 59-60
, , , , , , ,
InP Nanowires Grown by SA-MOVPE
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 45-46
, , , , , , ,
Improvement of Minority Carrier Lifetime in GaAs/AlxGal1-xAs Core-Shell Nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 33-34
, , , , , , ,
Arrayed nanoantennas for efficient broadband unidirectional emission enhancement
Conference on Lasers and Electro-Optics (CLEO 2012) ?, ?() 1-2
, , , , , , , , , ,
Nonlinear fishnet metamaterials based on liquid crystal infiltration
Conference on Lasers and Electro-Optics (CLEO 2012) ?, ?() 1-2
, , , ,
Improved performance of InGaAs/GaAs Quantum Dot Solar Cells using Si-modulation doping
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 127-128
, , , ,
Reduction of Gain-Saturation in Merged Beam Lasers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 189-190
, , , , , , ,
Coupling of light from microdisk lasters to nano-antennas with nano-tapers
IEEE Photonics Conference (IPC 2012) ?, ?() 889-890
, , , , , , , , , , ,
Tunable and nonlinear fishnet metamaterials based on liquid crystal infiltration
Metamaterials: Fundamentals and Applications V 8455() 1-10
, , , , , ,
Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 131-132
, , ,
Drop epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 53-54
, , ,
Growth and confinement effects in III-V semiconductor nanostructures
Microoptics Conference (MOC 2011) ?, ?()
, , , , ,
The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties
IEEE Photovoltaic Specialists Conference PVSC 2011 ?, ?() 513-516
, , , , ,
Two-photon luminescence study of optically trapped InP semiconductor nanowires
2011 International Quantum Electronics Conference, IQEC 2011 and Conference on Lasers and Electro-Optics, CLEO Pacific Rim 2011 ?, ?() 221-223
, , , , , ,
High speed synchronous position sensing and acousto-optic switching for optical tweezers applications
Optical Trapping Applications, OTA 2011 ?, ?()
, , , , , , , , , ,
Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy
International Conference on the Physics of Semiconductors 2010 1399() 481-482
, , , , , , ,
Growth and characterization of compound semiconductor nanowires on Si
IEEE Conference on Nanotechnology (IEEE-NANO 2011) ?, ?() 44-47
, , , , , , , , , ,
Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy
International Conference on the Physics of Semiconductors 2010 1399() 481-482
, , , , , , , , ,
Compound Semiconductor Nanowires for Optoelectronic Device Applications
ICO International Conference of Information Photomics ?, ?() 1-2
, , , , ,
Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells
Photonics Society 2011 annual meeting ?, ?() 387-388
, , , , , , ,
Growth and characterization of III-V compound semiconductor nanowires
Opto-Electronics and Communications Conference (OECC 2011) ?, ?() 366-367
, , , , , , ,
Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 37-38
, , , , , , ,
Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 37-38
, , , , , , ,
Characterisation of nanostructures via terahertz spectroscopy
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 23-24
, , , , , , , ,
Infrared metamaterials tuned by liquid crystals
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 27-28
, , , , ,
Temperature Dependence of Dark Current Properties of InGaAs/GaAs Quantum Dot Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 127-128
, , , , , ,
InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 83-84
, , , , , , , , ,
Selective enhancement of photon emission in a quantum dot coupling with micropillar cavity
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 71-72
, , , , ,
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 2
, , , , , , ,
Photoluminescence study of optically trapped InP semiconductor nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 211-212
, , , , , ,
Growth of GaAs nanowires using different Au catalysts
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 35-36
, , , , , ,
Growth of GaAs nanowires using different Au catalysts
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 35-36
, , , , ,
A comparative study of transistors based on wurtzite and zincblende InAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 203-204
, , , , , , ,
Photoluminescence study of optically trapped InP semiconductor nanowires
Optical Trapping and Optical Micromanipulation VII 7762() 1-6
, , , , , , , , ,
Can insulating the gates lead us to stable modulation-doped hole quantum devices?
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 199-200
, , , ,
Increasing the coupling efficiency of a microdisk laser to waveguides by using spiral structures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 69-70
, , , , , ,
InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 83-84
, , ,
MOCVD grown quantum dot-in-a-well solar cells
11th International Symposium on Advanced Materials, ISAM-2009 442() 398-403
, , , , , , , ,
Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 45-46
, , , , , , , ,
Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells
International Conference on Ultrafast Phenomena, UP 2010 ?, ?() 1-2
, , , ,
Observation of spatially separated coherent coupling near the LO phonon resonance within asymmetric double quantum wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 115-116
, , , ,
Analysis of multi-wavelength photonic crystal single-defect laser arrays
23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 ?, ?() 500-501
, , , , ,
Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 51-52
, , , , , , ,
Synthesis of indium oxide hexagonal microcavity and identification of its whispering gallery modes
14th International Conference on II-VI Compounds, II-VI 2009 7, 6() 1672-1674
, , ,
Study of intermixing mechanism in AlInGaAs/InGaAs quantum well
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 47-48
, , , , ,
Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 716-717
, , , , , , , , , , , ,
Improvement of Morphology, Structure, and Optical Properties of GaAs Nanowires Grown on Si substrates
IEEE Conference on Nanotechnology (IEEE-NANO 2010) ?, ?() 470-473
, , , , ,
Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 51-52
, , , ,
High efficiency coupling of light from photonic wire lasers into nano-antennas
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 67-68
, , , , , , , , , , , ,
Structural and Optical Characterization of Vertical GaAs / GaP Core-Shell Nanowires Grown on Si Substrates
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 57-58
, , , ,
High efficiency coupling of light from photonic wire lasers into nano-antennas
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 67-68
, ,
Shape control and emission wavelength extension of InP-based InAsSb nanostructures
2009 MRS Fall Meeting 1208() 178-183
, , , , , , , , , , , ,
Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) na() 57-58
, , , , , , , , , , , ,
Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates
IEEE Conference on Nanotechnology (IEEE-NANO 2010) () 470-473
, ,
Mid-infrared InAsSb quantum dots with high emission efficiency
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 65-66
, , , , , , , ,
III-V compound semiconductor nanowires
2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 ?, ?() 155-156
, , , , ,
Semiconductor disk laser with a diamond heatspreader
CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics ?, ?() 1-2
, , , , , , , , , ,
Effect of the crystal structure on the optical properties of InP nanowires
2009 IEEE LEOS Annual Meeting Conference, LEOS '09 ?, ?() 145-146
, , , , , , , , , , ,
Nanowires for optoelectronic device applications
15th International Semiconducting and Insulating Materials Conference, SIMC-XV 6, 12() 2678-2682
, , , , , , , , ,
Tilted response of fishnet photonic metamaterials at near-infrared wavelengths
Australasian Conference on Optics, Lasers and Spectroscopy and the Australian Conference on Optical Fibre Technology in association with the International Workshop on Dissipative Solitons (ACOLS ACOFT 2009) ?, ?() 2
, , , , , , , , , ,
Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
14th OptoElectronics and Communications Conference (OECC 2009) ?, ?()
, , , , , , , , , ,
III-V compound semiconductor nanowires
2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 ?, ?() 59-60
, , , ,
Photonic crystal-enhanced quantum dot infrared photodetectors
Nanoengineering: Fabrication, Properties, Optics, and Devices 2008 7039() 70390S/1-11
, , , , , ,
Light transmission through nanohole arrays of periodic and quasi-periodic geometries
Optical Fabrication and Testing, OFT 2008 ?, ?()
, , ,
Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering
Nanoengineering: Fabrication, Properties, Optics, and Devices 2008 7039() 70390U/1-10
, , , , , , , , ,
Growth behavior of epitaxial semiconductor axial nanowire heterostructures
IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008) ?, ?() 71-74
, , ,
Role of Stress on Impurity Free Disordering of Quantum Dots
IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008) ?, ?() 221-224
, , ,
Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells
International Conference on Nanoscience and Nanotechnology (ICONN 2008) ?, ?() 32-35
, , , , , , , , , ,
Optical properties of single InP and GaAs nanowire heterostructures
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2008) ?, ?() 427-428
, , , , , , , , , , , , ,
Growth, Structural and Optical Properties of High Quality GaAs Nanowires for Optoelectronics
IEEE Conference on Nanotechnology (IEEE-NANO 2008) ?, ?() 59-62
, , , , , , , , , , , , ,
Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics
2008 8th IEEE Conference on Nanotechnology, IEEE-NANO ?, ?() 59-62
, , , ,
Growth, structural and optical properties of GaAs, InGaAs and AIGaAs nanowires and nanowire heterostructures
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2007) ?, ?() 407-408
, , , ,
Integration of Quantum Dot devices by Selective Area Epitaxy
International Conference on Nanoscience and Nanotechnology (ICONN 2006) ?, ?() 442-445
, , , , , , , ,
Understanding the Kink Formation in GaAs/InAs Heterostructural Nanowires
International Conference on Nanoscience and Nanotechnology (ICONN 2006) ?, ?() 600-603
, , , ,
Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers
International Conference on Nanoscience and Nanotechnology (ICONN 2006) ?, ?() 505-508
, , , , , , , , ,
Growth Mechanism of Truncated Triangular GaAs Nanowires
International Conference on Nanoscience and Nanotechnology (ICONN 2006) ?, ?() 604-605
, , , ,
Growth, Structural and Optical Properties of GaAs/AlGaAs Core/Shell Nanowires with and without Quantum Well Shells
International Conference on Nanoscience and Nanotechnology (ICONN 2006) ?, ?() 450-453
, , , , ,
Terahertz Emission and Lifetime Measurements of Ion-implanted Semiconductors: Experiment and Simulation
Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science/Conference on Photonic Applications, Systems and Technologies (CLEO/QELS 2006) ?, ?() JTuD18-1-2
, ,
Growth of Stacked InAs/InP Quantum Dot Structures
International Conference on Nanoscience and Nanotechnology (ICONN 2006) ?, ?() 454-457
, , , , ,
Polarization Sensitive Terahertz Time Domain Spectroscopy
Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science/Conference on Photonic Applications, Systems and Technologies (CLEO/QELS 2006) ?, ?() CMS4-1-2
, , ,
Thermal Annealing Study on InGaAs/GaAs Quantum Dot Infrared Photodetectors
International Conference on Nanoscience and Nanotechnology (ICONN 2006) ?, ?() 493-496
, , , , ,
Quantum Dots-in-a-Well Infrared Photodetectors Grown by MOCVD
International Conference on Nanoscience and Nanotechnology (ICONN 2006) ?, ?() 419-422
, , ,
InGaAsN Quantum Dots for Long Wavelength Lasers
International Conference on Nanoscience and Nanotechnology (ICONN 2006) ?, ?() 482-485
, , , , ,
Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) 4() 273-275
, , , ,
Characterisation of InGaAs/GaAs Quantum Dot Lasers Grown by Metal-Organic Vapour Phase Epitaxy
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) ?, ?() 277-279
, ,
Integration of an InGaAs Quantum-Dot Laser with a Passive Waveguide using Selective-Area MOCVD
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005() 915-916
, , , ,
Growth and Characterisation of InAs/GaAs Quantum Dots grown by MOCVD
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) ?, ?() 1-4
, , , ,
Growth of GaAs/InAs Vertical Nanowires on GaAs (111)B by Metalorganic Chemical Vapor Deposition
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005() 455-456
, , , , ,
Quantum Dot Lasers and Optoelectronic Device Integration
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005() 606-608
, , ,
The Impact of AlGaAs Cladding Layers Grown at Low Temperature on the Performance of MOCVD based in InAs/GaAs Quantum Dot Laser Diodes
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005() 911-912
, , , , , ,
Quantum Dot Optoelectronic Devices
Microoptics Conference (MOC 2005) ?, ?() J5-1-4
, , , , ,
Towards p-type Doping of ZnO by Ion Implantation
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 829() 847-848
, , , , , , ,
Hot Electron Injection Laser controlled carrier-heating induced gain switching
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) ?, ?() 397-400
, , , ,
Rapid Thermal Annealing Study of InGaAs/GaAs Quantum Dot Infrared Photodetectors grown by Metal-Organic Chemical Vapour Deposition
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005() 228-229
, ,
Role of Thin GaAs Interlayer on InAs Quantum Dots Grown on InGaAsP/InP (100) by Metalorganic Chemical Vapor Deposition
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) ?, ?() 331-334
, , , ,
Proton Irradiation Induced Intermixing in InxGa1_xAs/InP Quantum Wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) ?, ?() 93-96
, , ,
Comparison of Photocurrent Spectra of InGaAsN QD and InGaAs QW Laser Devices
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) ?, ?() 9-12
, , , , ,
Defect Engineering and Atomic Relocation Processes in Impurity-Free Disordered GaAs and AIGaAs
Materials Research Society Meeting 2003 799() 1
, ,
Growth of InGaAs Quantum Dots by Metal Organic Chemical Vapour Deposition
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 307-310
, , , ,
Interdiffusion in InGaAs Quantum Dots by Ion Implantation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 515-518
, , , , ,
Production and Processing of Semiconductor Nanocrystals and Nanostructures for Photonic Applications
National Conference and Exhibition on Nanotechnology 2003 ?, ?() 74-80
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Growth and Characterization of GaAsN Bulk Layer and (InGaAsN Quantum-well Structures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 247-250
, , , ,
Properties of Radiative Recombination in GaAsN Epilayers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 483-486
, ,
Evolution of InGaAs/InP Quantum Well Intermixing as a Function of Cap Layer
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 491-494
, , , ,
Improvement of Kink-free Operation in InGaAs/GaAs/AlGaAs High Power, Ridge Waveguide Laser Diodes
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 25-28
, , , , ,
Suppression of Interdiffusion in In0.5Ga0.5As/GaAs Quantum Dots
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 503-506
, , , , ,
Structural, Electrical and Optical Properties of MEV As+ Ion Implanted InP
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 487-490
, , ,
Atomic Relocation of Fast Diffusers in Impurity-free Disordered P-type GaAs
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 495-498
, , , , , , ,
Impurity Free Intermixing for Optoelectronic Device Integration
Integrated Optoelectronics ?, ?() 89-105

(191 publications)

Conference written presentation

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Direct Characterization of Axial p-n Junctions for InP Nanowire Array Solar Cells Using Electron Beam-Induced Current
Light, Energy and the Environment 2015 ?, ?()

(1 publications)

Journal article (non-refereed)

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Erratum: In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse (vol 31, 244002, 2020)
Nanotechnology 31, 34()

(1 publications)

Journal Editor

, , ,
Low-Dimensional Nanostructures for Optoelectronic Applications
Journal of Nanomaterials ()
, ,
Nanostructured photovoltaics PREFACE
Journal of Physics D: Applied Physics 46, 2() 1

(2 publications)

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