publications 2002

2002

Note: To search this listing with your browser
press ctrl-f or apple-f

Book chapter

Comtet G, Dujardin G, Hellner L, Petravic M
Photon Induced Fabrication of Atomic Scale Structures on Surfaces
International Conference on Photonic, Electronic and Atomic Collisions (XXII ICPEAC)
Rinton Press, Princeton, USA (2002) 92-100

(1 publications)

Journal article

Araujo L, Grande P, Behar M, dos Santos J
Random Stopping Power and Energy Straggling of O-16 Ions into Amorphous Si Target
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 79-83

Li C, Sun X, Wong N, Lee C, Lee S, Teo B
Silicon Nanowires Wrapped with Au Film
Journal of Physical Chemistry B 106(2002) 6980-6984

Mukherjee A, Dasgupta M, Hinde D, Timmers H, Timmers H, Butt R, Gomes P
Absence of Fusion Suppression Due to Breakup in the ¹²C+⁷Li Reaction
Physics Letters B 526, 3-4(2002) 295-300

Monakhov E, Wong-Leung J, Kuznetsov A, Jagadish C, Svensson B
Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation
Physical Review B 65(2002) 245201-1-9

McCann M, Weber K, Petravic M, Blakers A
Boron doping of silicon layers grown by liquid phase epitaxy
Journal of Crystal Growth 241, 1-2(2002) 45-50

Liu A, McCallum J, Deenapanray P
The Effect of Potassium on the Rate of Solid Phase Epitaxy in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 777-781

Lippen T, Boudinov H, Tan H, Jagadish C
Electrical Isolation of Al_xGa_1-xAs by Ion Irradiation
Applied Physics Letters 80(2002) 264-266

Li Q, Xu S, Xie M, Tong S, Zhang X, Liu W, Chua S
Strong screening effect of photo-generated carriers on piezoelectric field in In0.13Ga0.87N/In0.03Ga0.97N quantum wells
Japanese Journal of Applied Physics 41, 10A(2002) L1093-L1095

Li C, Wang N, Wong S, Lee C, Lee S
Metal Silicide/Silicon Nanowires from Metal Vapor Vacuum Arc Implantation
Advanced Materials 14, 3(2002) 218-221

Li C, Sun X, Wong N, Lee C, Lee S, Teo B
Ultrafine and Uniform Silicon Nanowires Grown with Zeolites
Chemical Physics Letters 365(2002) 22-26

Leech P, Reeves G, Holland A, Ridgway M, Shanks F
Enhancement of the Etch Rate of CVD Diamond by Prior C and Ge Implantation
Diamond and Related Materials 11(2002) 837-840

Rode A, Elliman R, Gamaly E, Veinger A, Christy A, Hyde S, Luther-Davies B
Electronic and magnetic properties of carbon nanofoam produced by high-repetition-rate laser ablation
Applied Surface Science 197(2002) 644-699

Lederer M, Hildebrandt M, Kolev V, Luther-Davies B, Taylor B, Dawes J, Dekker P, Piper J, Tan H, Jagadish C
Passive Mode Locking of a Self-frequency-doubling Yb:Yal₃ (BO₃)₄ Laser
Optics Letters 27, 6(2002) 436-438

Kucheyev S, Williams J, Zou J, Li G, Jagadish C, Titov A
Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 782-786

Kucheyev S, Williams J, Zou J, Jagadish C, Pophristic M, Guo S, Ferguson I, Manasreh M
Ion-beam-produced Damage and its Stability in AIN Films
Journal of Applied Physics 92, 7(2002) 3554-3558

Kucheyev S, Williams J, Zou J, Li G, Jagadish C, Manasreh M, Pophristic M, Guo S, Ferguson I
Structural Disorder in Ion-implanted Al_xGa_1-xN
Applied Physics Letters 80, 5(2002) 787-789

Kucheyev S, Williams J, Jagadish C, Zou J, Li G
Blistering of H-implanted GaN
Journal of Applied Physics 91, 6(2002) 3928-3930

Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C, Li G
Chemical Origin of the Yellow Luminescence in GaN
Journal of Applied Physics 91, 9(2002) 5857-5874

Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C, Li G
X-ray Spectrometry Investigation of Electrical Isolation in GaN
Journal of Applied Physics 91, 6(2002) 3940-3942

Kucheyev S, Deenapanray P, Jagadish C, Williams J, Yano M, Koike K, Sasa S, Inoue M, Ogata K
Electrical Isolation of ZnO by Ion Bombardment
Applied Physics Letters 81, 18(2002) 3350-3352

Pellegrino P, Leveque P, Kortegaard-Nielsen H, Hallen A, Wong-Leung J, Jagadish C, Svensson B
Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon
Nuclear Instruments and Methods in Physics Research: Section B 186(2002) 334-338

Ruault M, Fortuna F, Bernas H, Ridgway M, Williams J
How Nanocavities in Amorphous Si Shrink Under Ion Beam Irradiation: An in situ Study
Applied Physics Letters 81, 14(2002) 2617-2619

Kucheyev S, Boudinov H, Williams J, Jagadish C, Li G
Effect of Irradiation Temperature and Ion Flux on Electrical Isolation of GaN
Journal of Applied Physics 91, 7(2002) 4117-4120

Whitlow H, Timmers H, Timmers H, Elliman R, Dall T, Dall T, Zhang Y, Uribasterra J, O'Connor D
Measurements of Si Ion Stopping in Amorphous Silicon
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 84-88

Tan H, Jagadish C
Electrical isolation of Al xGa 1-xAs by ion irradiation
Applied Physics Letters 80, 2(2002) 264-266

Rodriguez M
Performance characteristics of lithium ion cells at low temperatures
IEEE Aerospace and Electronic Systems Magazine 17, 12(2002) 16-20

Karouta F
Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures
Journal of Crystal Growth 241, 1-2(2002) 15-18

Jagadish C, Svensson B, Wong-Leung J
"Response to "comment on 'Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation'" [Appl. Phys. Lett. 80, 1492 (2002)]"
Applied Physics Letters 80, 8(2002) 1494-1495

Elliman R, Ridgway M
15th international conference on Ion-Beam Analysis (IBA-15): 12th AINSE conference on Nuclear Techniques of Analysis (NTA-12)
Nuclear Instruments and Methods in Physics Research: Section B 190, 1-4(2002) vii-viii

Zhao Q, Kluth P, Winnerl S, Lenk S, Mantl S
Nanometer Patterning of Epitaxial CoSi2 on Silicon-on-Insulator Substrates
Microelectronic Engineering 60(2002) 183-190

Zhao Q, Kluth P, Winnerl S, Lenk S, Mantl S
Self-Assembly Patterning of Epitaxial CoSi2 Nano-Structures
Microelectronic Engineering 64(2002) 443-447

Whitlow H, Timmers H, Timmers H, Elliman R, Dall T, Dall T, Zhang Y, O'Connor D
Measurement and Uncertainties of Energy Loss in Silicon over a Wide Z₁ Range using Time of Flight Detector Telescopes
Nuclear Instruments and Methods in Physics Research: Section B 195(2002) 133-146

Welham N, Welham N
Enhancing Oxygen Recovery from Ilmenite by Extended Milling
Materials Science and Engineering A 336(2002) 143-149

Schmidt M, Schmidt M, Campbell S
In Situ Neutron Diffraction Study (300-1273 K) of Non-Stoichiometric Strontium Ferrite SrFeO_x
Journal of Physics and Chemistry of Solids 63(2002) 2085-2092

Titov A, Belyakov V, Kucheyev S
Molecular Effect in Semiconductors under Heavy-Ion Bombardment: Quantitative Approach Based on the Concept of Nonlinear Displacement Spikes
Nuclear Instruments and Methods in Physics Research: Section B 194(2002) 323-332

Timmers H, Timmers H, Dall T, Dall T, Elliman R, Uribasterra J, Uribasterra J, Whitlow H, Sarwe E
Threshold Stoichiometry for Beam Induced Nitrogen Depletion of SiN
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 428-432

Timmers H, Timmers H, Dall T, Dall T, Elliman R
Unique Capabilities of Heavy Ion Elastic Recoil Detection with Gas Ionization Detectors
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 393-396

Tarnopolsky A, Lai J, Fletcher N
Aerodynamic Damping of Randomly Excited Plates in Stationary and Moving Air
Journal of Sound and Vibration 253, 4(2002) 795-805

Sun X, Li C, Wong W, Wong N, Lee C, Lee S, Teo B
Formation of Silicon Carbide Nanotubes and Nanowires via Reaction of Silicon (from Disproportionation of Silicon Monoxide) with Carbon Nanotubes
Journal of the American Chemical Society 124(2002) 14464-14471

Sun X, Li C, Wong N, Lee C, Lee S, Teo B
Reductive Growth of Nanosized Ligated Metal Clusters on Silicon Nanowires
Inorganic Chemistry 41, 17(2002) 4331-4336

Sun X, Li C, Wong N, Lee C, Lee S, Teo B
Templating Effect of Hydrogen-Passivated Silicon Nanowires in the Production of Hydrocarbon Nanotubes and Nanoonions via Sonochemical Reactions with Common Organic Solvents under Ambient Conditions
Journal of the American Chemical Society 124(2002) 14856-14857

Sun B, Gal M, Gao Q, Tan H, Jagadish C
On the Nature of Radiative Recombination in GaAsN
Applied Physics Letters 81, 23(2002) 4368-4370

Shang N, Li C, Wong W, Lee C, Bello I, Lee S
Microstructure and Field Emission Properties of Coral-Like Carbon Nanotubes
Applied Physics Letters 81, 26(2002) 5024-5026

Kucheyev S, Bradby J, Williams J, Jagadish C, Swain M
Mechanical Deformation of Single-crystal ZnO
Applied Physics Letters 80, 6(2002) 956-958

Kluth P, Zhao Q, Winnerl S, Mantl S
Epitaxial CoSi2-Nanostructures: An approach to silicon nanoelectronics
Microelectronic Engineering 64(2002) 163-171

Araujo L, Grande P, Behar M, Dias J, dos Santos J, Schiwietz G
Channeling Energy Loss of O Ions in Si: The Barkas Effect
Nuclear Instruments and Methods in Physics Research: Section B 193(2002) 172-177

Butcher K, Timmers H, Timmers H, Chen A, Chen P, Dall T, Dall T, Goldys E, Tansley T, Elliman R, Freitas J
Crystal Size and Oxygen Segregation for Polycrystalline GaN
Journal of Applied Physics 92, 6(2002) 3397-3403

Dall T, Dall T, Timmers H, Timmers H, Elliman R
Accurate Depth Profiling Through Energy-Dependent Pulse Height Deficit Compensation in Gas Ionization Detectors
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 397-401

Dall T, Dall T, Ophel T, Timmers H, Timmers H, Elliman R
A Systematic Study of the Pulse Height Deficit in Propane-Filled Gas Ionization Detectors
Nuclear Instruments and Methods in Physics Research: Section A 483(2002) 676-688

Dall T, Dall T, Davies J, Davies J, Elliman R, Ophel T, Timmers H, Timmers H
Silicon Detector Response to Heavy Ions at Energies of 1-2MeV/amu
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 387-392

Chen Y, Conway M, Williams J, Zou J
Large-quantity Production of High-yield Boron Nitride Nanotubes
Journal of Materials Research 17, 8(2002) 1896-1899

Chen X, Fung S, Beling C, Huang Y, Li Q, Xu S, Gong M, Hankel T, Tanoue H, Kobayashi N
Photoluminescence characterization of beryllium-implanted 6H-silicon carbide
Solid State Communications 121, 2-3(2002) 67-71

Chadderton L, Chen Y
A Model for the Growth of Bamboo and Skeletal Nanotubes: Catalytic Capillarity
Journal of Crystal Growth 240, 1-2(2002) 164-169

Carmody C, Boudinov H, Tan H, Jagadish C, Lederer M, Kolev V, Luther-Davies B, Dao L, Gal M
Ultrafast Trapping Times in Ion Implanted InP
Journal of Applied Physics 92, 5(2002) 2420-2423

Cai M, Qiao D, Yu L, Lau S, Li C, Hung L, Haynes T, Henttinnen K, Suni I, Poon V, Marek T, Mayer J
Single Crystal Si Layers on Glass Formed by Ion Cutting
Journal of Applied Physics 92, 6(2002) 3388-3392

Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Nanoindentation-induced Deformation of Ge
Applied Physics Letters 80, 15(2002) 2651-2653

De Medeiros Azevedo G, Ridgway M, Yu K, Glover C, Foran G
Structural Characterization of Amorphised InAs with Synchrotron Radiation
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 851-855

Bradby J, Williams J, Wong-Leung J, Kucheyev S, Swain M, Munroe P
Spherical Indentation of Compound Semiconductors
Philosophical Magazine A 82, 10(2002) 1931-1939

Bradby J, Kucheyev S, Williams J, Jagadish C, Swain M, Munroe P, Phillips M
Contact-induced Defect Propagation in ZnO
Applied Physics Letters 80, 24(2002) 4537-4539

Bradby J, Kucheyev S, Williams J, Wong-Leung J, Swain M, Munroe P, Li G, Phillips M
Indentation-induced Damage in GaN Epilayers
Applied Physics Letters 80, 3(2002) 383-385

Bartels J, Vianden R, Ridgway M
Impurity Gettering by Cavities in Si Investigated with the PAC Technique
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 846-850

Ashrafi A, Suemune I, Kumano H, Tanaka S
Nitrogen-Doped p-Type ZnO Layers Prepared with H2O Vapor-Assisted Metalorganic Molecular-Beam Epitaxy
Japanese Journal of Applied Physics 41(2002) L1281-L1284

Ashrafi A, Kumano H, Suemune I
Growth Activation of ZnO Layers with H2O Vapor on a face of Sapphire Substrates by Metalorganic Molecular-Beam Epitaxy
Physica Status Solidi B (On-line) 192(2002) 224-229

Ashrafi A, Kumano H, Suemune I
CdO Epitaxial Layers Grown on (001) GaAs Surfaces by Metalorganic Molecular-Beam Epitaxy
Journal of Crystal Growth 237(2002) 518-522

Ashrafi A, Kumano H, Suemune I
H2O-Vapor-Activated Growth of ZnO on a-Sapphire Substrate with Metalorganic Molecular-Beam Epitaxy
Japanese Journal of Applied Physics 41(2002) 2851-2854

Davies G, Harding R, Jin T, Mainwood A, Wong-Leung J
Optical Studies of Ion-Implantation Centres in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 186(2002) 1-9

De Medeiros Azevedo G, Williams J, Young I, Conway M, Kinomura A
In Situ Measurements of the Channeling Dependence of Ion-beam-induced Recrystallization in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 772-776

Kluth P, Zhao Q, Winnerl S, Mantl S
Self-Assembly Patterning of Epitaxial CoSi2 Wires
Microelectronic Engineering 60(2002) 239-245

Fu L, Heijden R, Tan H, Jagadish C, Dao L, Gal M
Study of Intermixing in a GaAs/AlGaAs Quantum-well Structure using Dope Spin-on Silica Layers
Applied Physics Letters 80, 7(2002) 1171-1173

Kinomura A, Williams J, Tsubouchi N, Horino Y
Platinum Atom Location on the Internal Walls of Nanocavities Investigated by Ion Channeling Analysis
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 606-610

Ip K, Overberg M, Heo Y, Norton D, Pearton S, Kucheyev S, Jagadish C, Williams J, Wilson R, Zavada J
Thermal Stability of Ion-implanted Hydrogen in ZnO
Applied Physics Letters 81, 21(2002) 3996-3998

Hattori H, Cazo R, Barbosa C
Analysis of One-Dimensional Photonic Bandgap Structures with Pseudonoise Organization of Layers in the Primitive Periodic Cell
Microwave and Optical Technology Letters 32, 5(2002) 370-373

Gurarie V, Otsuka P, Jamieson D, Williams J, Conway M
The Effect of Crystal Orientation on Thermal Shock-induced Fracture and Properties of Ion Implated Sapphire
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 751-755

Gal M, Dao L, Kraft E, Johnston M, Carmody C, Tan H, Jagadish C
Thermally Stimulated Luminescence in Ion-Implanted GaAs
Journal of Luminescence 96(2002) 287-293

Fujisawa N, Tarrant R, Swain M, James N, McKenzie D, Woodard J
PBII Deposition of Thick Carbon Coatings from a Cathodic Arc Plasma
Surface and Coatings Technology 156(2002) 143-148

Fujisawa N, Swain M, James N, Tarrant R, Woodard J, McKenzie D
Nanoindentation Studies of Brittle Thin Films on a Titanium Alloy Substrate
Journal of Materials Research 17, 4(2002) 861-870

Fu L, Wong-Leung J, Deenapanray P, Tan H, Jagadish C, Gong B, Lamb R, Cohen R, Reichert W, Dao L, Gal M
Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide
Journal of Applied Physics 92, 7(2002) 3579-3583

Fletcher N, Tarnopolsky A, Lai J
Rotational Aerophones
The Journal of the Acoustical Society of America 111, 3(2002) 1189-1196

Deenapanray P
Trap-Limited Migration of Vacancy-Type Defects in 7.5 keV H^--Implanted Si
Applied Physics Letters 80, 9(2002) 1577-1579

Fletcher N, McGee W, Tarnopolsky A
Bell Clapper Impact Dynamics and the Voicing of a Carillon
The Journal of the Acoustical Society of America 111, 3(2002) 1437-1444

Fletcher N, Thwaites S
Electrode Surface Profile and the Performance of Condenser Microphones
The Journal of the Acoustical Society of America 112, 6(2002) 2779-2785

Fletcher N
Condenser Microphones - A Tutorial
Acoustics Australia 30, 3(2002) 109-113

Fletcher N
Harmonic? Anharmonic? Inharmonic?
American Journal of Physics 70, 12(2002) 1205-1207

Elliman R, Lederer M, Luther-Davies B
Optical Absorption Measurements of Silica Containing Si Nanocrystals Produced by Ion Implantation and Thermal Annealing
Applied Physics Letters 80, 8(2002) 1325-1327

Deenapanray P, Martin A, McGowan P, Jagadish C
On the Pulsed Anodic Oxidation of n⁺-InP
Electrochemical and Solid-State Letters 5, 6(2002) G41-G44

Deenapanray P, Martin A, Doshi S, Tan H, Jagadish C
Atomic Relocation Processes in Impurity-Free Disordered p-GaAs Epilayers Studied by Deep Level Transient Spectroscopy
Applied Physics Letters 81, 19(2002) 3573-3575

Deenapanray P, Gong B, Lamb R, Martin A, Fu L, Tan H, Jagadish C
Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers
Applied Physics Letters 80, 23(2002) 4351-4353

Deenapanray P
Dynamics of the Ion Beam Induced Nitridation of Silicon
Journal of Vacuum Science and Technology A 20, 4(2002) 1261-1269

Williams J, Jagadish C, Li G
Structural disorder in ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5(2002) 787-789

(89 publications)

Conference paper

Buda M, Fu L, Hay J, Deenapanray P, Tan H, Jagadish C, Reece P, Gal M
Impurity Free Intermixing for Optoelectronic Device Integration
Integrated Optoelectronics ?, ?(2002) 89-105

Fletcher N, Tarnopolsky A, Lai J
Australian Aboriginal Musical Instruments - The Bullroarer
Australian Acoustical Society Conference (Acoustics 2002) ?, ?(2002) 186-189

Hogg S, Kluth P, Lenk S, Zhang M, Trellenkamp S, Moers J, Mantl S
Diffusion and Defect formation in Ion Implanted Si nanostructures
International Conference on Ion Implantation Technology 2002 ?, ?(2002) 682

Vyvenko O, Sachdeva R, Istratov A, Armitage R, Weber E, Deenapanray P, Jagadish C, Gao Y, Huff H
Study of Diffusivity and Electrical Properties of Zr and Hf in Silicon
Semiconductor Silicon 2002 ?, ?(2002) 440-451

(4 publications)

Updated: 19 August 2022/ Responsible Officer: Director, RSPhys/ Page Contact: Physics Webmaster