We demonstrate directional emission from III-V nanowire lasers by engineering waveguide modes in optically coupled nanowire pairs. Arrays of such pairs enhance far-field directionality via non-local resonance, highlighting the potential of metasurface lasers as compact, coherent light sources for applications such as LiDAR and beam steering.

In this project, we aim to explore PT-symmetric lasing in III-V semiconductor micro-cavity lasers that are epitaxially grown on their substrates, free from any etching-induced damage. In particular, we aim to demonstrate performance improvements by exploiting some of the unique features of bottom-up grown laser cavities.

This project aims to demonstrate lasing in a bottom-up metasurface supporting a perturbed symmetry-protected quasi-BIC mode, while exploring its unique optical properties. We will also develop fabrication processes to achieve electrically injected lasing, highlighting the advantages of bottom-up metasurface design over conventional top-down laser fabrication approaches.

In this project, we aim to demonstrate photonic crystal surface-emitting lasers (PCSELs) constructed from vertically-standing III-V semiconductor nanowires as the fundamental building blocks. We will also explore more advanced nanowire-based PCSEL designs, including hetero-lattice PCSELs with enhanced in-plane optical feedback and topological PCSELs.

Bottom-up fabrication of lasers via epitaxial growth is emerging as a promising alternative to conventional top-down methods, offering potential to realize micro-lasers with ultra-low optical losses. In this project, we aim to demonstrate electrically injected lasing in InP/InAsP multi-quantum well micro-ring cavities, grown using the selective area epitaxy technique.

Although planar growth of III-V materials on Si has been widely demonstrated, direct growth of III-V nanostructures on Si remains challenging. This project aims to realize InP/InAsP light-emitting nanostructures on Si substrates by engineering the III-V/Si interfacial energy, enabling monolithic integration of active photonic components on silicon.