This project aims to demonstrate electrically injected InP/InAsP micro-ring nanolasers grown by selective area epitaxy. By combining atomically smooth, low-loss cavities with scalable on-chip integration, it addresses a key challenge in nanophotonics. The resulting light sources promise transformative applications in telecommunications, sensing, and next-generation photonic integrated circuits.

This project addresses the LED “green gap” problem by engineering GaP and AlInP nanostructures to adopt the hexagonal wurtzite phase, transforming them into direct bandgap semiconductors. Using the crystal structure transfer technique, it aims to achieve efficient green emission, enabling true white RGB displays, advanced lighting, and next-generation microdisplays.

This project develops bottom-up, epitaxially-grown nanolaser cavities with atomically smooth facets that overcome scattering losses in top-down fabricated devices. By exploring advanced cavity concepts—including flatband and topological nanolasers—it aims to deliver robust, scalable, and low-threshold light sources, redefining nanolaser technology for next-generation integrated photonic systems.

This project tackles the long-standing challenge of integrating efficient light sources on silicon by enabling direct epitaxy of InP/InAsP nanostructures. By engineering the III-V/Si interface to overcome lattice and polarity mismatch, it aims to unlock scalable, energy-efficient Si photonics critical for AI data centres and next-generation computing infrastructure.