Bezakova E, Vianden R, Glover C, Ridgway M
Implantation-induced Amorphization of InP Characterised with perturbed Angular Correlation
Applied Physics Letters 75, 13(1999) 1923-1925
Deenapanray P,
Tan H,
Jagadish CImpurity-free interdiffusion in GaAs/Al 0.54Ga 0.46As multiple quantum wells capped with PECVD SiO x: Effect of nitrous oxide flowGriffith Asia Quarterly (
1999)
361-364
Glasko J,
Elliman R,
Fitzgerald JIon irradiation of GeSi/Si strained-layer heterostructuresMaterials Research Society Symposium Proceedings 540(
1999)
55-65
Fu L,
Tan H,
Jagadish C,
Gal MPossibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devicesGriffith Asia Quarterly (
1999)
352-354
Fu L,
Tan H,
Jagadish CQuantum well intermixing in InGaAs/(Al)GaAs by As and H irradiationGriffith Asia Quarterly (
1999)
355-357
Fu L,
Tan H,
Jagadish CInterdiffused quantum-well infrared photodetectors for color sensitive arraysApplied Physics Letters 75,
7(
1999)
923-925
Fatima S,
Jagadish C,
Wong-Leung JComparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ionsGriffith Asia Quarterly (
1999)
505-508
Elliman RCharacterization of thin films using heavy ion beamsBulletin of Materials Science 22,
3(
1999)
601-606
Dou H,
Li G,
Jagadish CRadiative recombination in p-type d-doped layers in GaAsPhysical Review B 60,
4(
1999)
R2193-R2196
Dou H,
Jagadish CPhotoluminescence of InGaAs/GaAs with double lightsJournal of Environmental Chemical Engineering 20,
8(
1999)
656-661
Dou H,
Jagadish CPhotoluminescence of selectively Si d-doped In0.2Ga0.8As heterostructure at 77KJournal of Environmental Chemical Engineering 20,
7(
1999)
573-577
Dou H,
Jagadish CPhotomodulation spectroscopy of Zn d-doped GaAsGriffith Asia Quarterly (
1999)
519-521
Dou H,
Jagadish CPhotoluminescence of Si d-doped InGaAs/GaAs heterostructures with double beam excitationGriffith Asia Quarterly (
1999)
516-518
Deenapanray P,
Tan H,
Petravic M,
Williams J,
Jagadish CCharacterization of low-temperature PECVD silicon dioxide filmsMaterials Research Society Symposium Proceedings 555(
1999)
197-202
Deenapanray P,
Williams JA dlts investigation of the effect of ion mass, fluence and energy on the introduction of a higher-order vacancy cluster in noble gas ion bombarded n-SiMaterials Research Society Symposium Proceedings 540(
1999)
121-126
Jagadish CChanges in interdiffusion associated with thermally oxidized GaAsGriffith Asia Quarterly (
1999)
218-221
Deenapanray P, Ridgway M
An XPS and glancing angle RBS investigation of metallic impurity contamination of magnetron sputter etched Si
Journal of Environmental Chemical Engineering , 291 SUPPL.2(1999) 365-367
Zhu X,
Zhang H,
Williams J,
Wang R,
Zhang L,
Wu XLow-Temperature Thermopower in Nanostructured SilverApplied Physics Letters 75,
1(
1999)
136-138
Zhu X,
Williams J,
Llewellyn D,
McCallum JInstability of Nanocavities in Amorphous SiliconApplied Physics Letters 74,
16(
1999)
2313-2315
Zhu X,
Williams J,
McCallum JStructural Changes in Ultra-High-Dose Self-Implanted Crystalline and Amorphous SiliconNuclear Instruments and Methods in Physics Research: Section B 148(
1999)
268-272
Zhao Q,
Willander M,
Holtz P,
Lu W,
Dou H,
Shen H,
Li G,
Jagadish CRadiative recombination in p-type delta doped layers in GaAsPhysical Review B 60(
1999)
R2193-R2196
Yu K, Walukiewicz W, Muto S, Jin H, Abelson J, Clerc C, Glover C, Ridgway M
Local structures of Ga atoms in Amorphous Silicon and Hydrogenated Amorphous Silicon Before and After Synchrotron X-ray Irradiation
Applied Physics Letters 75, 21(1999) 3282-3284
Wong-Leung J,
Williams J,
Kinomura A,
Nakano Y,
Hayashi Y,
Eaglesham DDiffusion and Transient Trapping of Metals in SiliconPhysical Review B 59,
11(
1999)
7990-7998
Willis P,
Fitzgerald J,
Williams JMechanochemical synthesis of boron nitride nanotubesMaterials Science Forum (
1999)
173-178
Williams J,
Conway M,
Wong-Leung J,
Deenapanray P,
Petravic M,
Brown R,
Eaglesham D,
Jacobson DThe Role of Oxygen on the Stability of Gettering of Metals to Cavities in SiliconApplied Physics Letters 75,
16(
1999)
2424-2426
Williams J,
Chen Y,
Wong-Leung J,
Kerr-Menz A,
Swain MUltra-Micro-Indentation of Silicon and Compound Semiconductors with Spherical IndentersJournal of Materials Research 14,
6(
1999)
2338-2343
Welham N, Kerr T
Ambient-Temperature Mechanochemical Formation of Titanium Nitride-Alumina Composites from TiO2 and FeTiO3
Journal of the American Ceramic Society 82, 9(1999) 2332-2336
Welham N
Non-Thermal Production of Tungsten from Scheelite
Materials Science and Technology 15(1999) 456-458
Jagadish CSelective intermixing of ion irradiated semiconductor heterostructuresMaterials Research Society Symposium Proceedings 540(
1999)
15-26
Jagadish CProton irradiation effects on the intersubband transition in GaAs/AlGaAs multiple quantum wells with bulk or superlattice barriersApplied Physics Letters 75,
4(
1999)
525-527
Welham N
Ambient Temperature Formation of (Ta, Nb)C and (Ta, Nb)N
Journal of Materials Science 34(1999) 21-27
Ridgway M
Implant isolation study of In0.53Ga0.47As
Griffith Asia Quarterly (1999) 29-32
Yuan S,
Jagadish C,
Zou JTEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wellsGriffith Asia Quarterly (
1999)
358-360
Williams J,
Conway MThermal fatigue of ion implanted magnesium oxide crystalsNuclear Instruments and Methods in Physics Research: Section B 148,
1-Apr(
1999)
773-777
Williams J,
Conway MThermal stress resistance of ion implanted sapphire crystalsNuclear Instruments and Methods in Physics Research: Section B 147,
1-Apr(
1999)
221-225
Williams JInstability of nanocavities in disordered and amorphous silicon under ion irradiationMaterials Research Society Symposium Proceedings 540(
1999)
127-132
Welham N,
Williams JCarbothermic reduction of llmenite (FeTiO3) and rutile (TiO2)Metallurgical and Materials Transactions B 30,
6(
1999)
1075-1082
Tan H,
Yuan S,
Jagadish C,
Lu WApplication of selective implantation induced intermixing on V-grooved AlGaAs/GaAs coupled quantum wireGriffith Asia Quarterly (
1999)
513-515
Tan H,
Jagadish C,
Gal MComparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxyGriffith Asia Quarterly (
1999)
348-351
Tan H,
Fu L,
Jagadish CImproved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequenceGriffith Asia Quarterly (
1999)
187-190
Tan H,
Jagadish CFabrication and characterization of delta-doped In 0.2Ga 0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxyGriffith Asia Quarterly (
1999)
140-143
Tan H,
Jagadish CIntermixing induced resonance shift in GaAs/Al xO y DBR resonatorsGriffith Asia Quarterly (
1999)
365-368
Smith L, Lee S
Quantum dot exciton dynamics through a nanoaperture: Evidence for two confined states
Physical Review Letters 83, 14(1999) 2797-2800
Rodriguez M
Spin asymmetries A1 of the proton and the deuteron in the low x and low Q2 region from polarized high energy muon scattering
Physical Review D 60, 7(1999) 1-Sep
Ridgway M, Leech P
Enhancement of the etch rate of LiNbO3 by prior bombardment with MeV O2+ ions
Journal of Vacuum Science and Technology A 17, 6(1999) 3358-3361
Ridgway M
Composition-dependent bond lengths in crystalline and amorphized GexSi1-x alloys
Physical Review B 60, 15(1999) 10831-10836
Lobo C,
Jagadish COptical properties of self-organized InGaAs/GaAs quantum dots in field-effect structuresMaterials Research Society Symposium Proceedings 536(
1999)
269-274
Lederer M,
Luther-Davies B,
Tan H,
Jagadish CIon-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasersGriffith Asia Quarterly (
1999)
105-108
Karouta F, Danckaert J, Thienpont H
Asymmetric current injection for polarization stabilization in vertical-cavity surface-emitting lasers
Journal of Environmental Chemical Engineering (1999) 47-48
Karouta F
Final polishing of Ga-polar GaN substrates using reactive ion etching
Journal of Electronic Materials 28, 12(1999) 1448-1451
Karouta F
Sealing Method of Dry-Etched AlAs/GaAs Top Mirrors in Vertical Cavity Surface Emitting Lasers
Electrochemical and Solid-State Letters 2, 2(1999) 83-85
Karouta F
Progress in Reactive Ion Etching of epitaxial GaN
Journal of Environmental Chemical Engineering (1999) 171-174
Jagadish C,
Gal MObservation of state filling effects in the carrier dynamics of self-assembled quantum dotsGriffith Asia Quarterly (
1999)
344-347
Jagadish C,
Fu LInter-facet noise correlation measurement as a diagnostic tool for semiconductor laser studiesGriffith Asia Quarterly (
1999)
236-239
Welham N
Room Temperature Reduction of Scheelite (CaWO4)
Journal of Materials Research 14, 2(1999) 619-627
Chen Y,
Williams JMechanochemical Reactions in the System FETiO3-SiJournal of Materials Research 13,
12(
1999)
3499-4503
Fatima S,
Jagadish C,
Lalita J,
Svensson B,
Hallen AHydrogen Interaction with Implantation Induced Point Defects in p-type SiliconJournal of Applied Physics 85,
5(
1999)
2562-2567
Gurarie V,
Jamieson D,
Orlov A,
Williams J,
Conway MThermal Fatigue of Ion Implanted Magnesium Oxide CrystalsNuclear Instruments and Methods in Physics Research: Section B 148(
1999)
773-777
Goodman S, Auret F, Ridgway M, Myburg G
Proton irradiation of n-type GaAs
Nuclear Instruments and Methods in Physics Research: Section B B148(1999) 446-449
Goldberg R,
Williams J,
Elliman RPreferential Amorphization at Extended Defects of Self-Ion-Irradiated-SiliconPhysical Review Letters 82,
4(
1999)
771-774
Glover C, Yu K, Ridgway M, Foran G
Characterisation of ion-implantation-induced disorder in GaAs by EXAFS
Japanese Journal of Applied Physics 38, 38-1(1999) 548-551
Glover C, Ridgway M, Yu K, Foran G, Lee T, Moon Y, Yoon E
Structural Characterization of Amorphized InP: Evidence for Chemical Disorder
Applied Physics Letters 74, 12(1999) 1713-1715
Glasko J,
Elliman R,
Zou J,
Cockayne D,
Fitzgerald JDefects Formed During 1 MeV Si Ion-Irradiation of GeSi/Si Strained Layer Heterostructures at Elevated TemperatureNuclear Instruments and Methods in Physics Research: Section B B148(
1999)
206-210
Fu L,
Tan H,
Johnston M,
Gal M,
Jagadish CProton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasersJournal of Applied Physics 85(
1999)
6786-6789
Fletcher N, Tarnopolsky A
Acoustics of the Avian Vocal Tract
The Journal of the Acoustical Society of America 105(1999) 35-49
Fletcher N
Materials for Musical Instruments
Acoustics Australia 27(1999) 5-9
Dowd A,
Samoc M,
Luther-Davies B,
Elliman RNonlinear Optical Properties of Semiconducting Nanocrystal in Fused SilicaNuclear Instruments and Methods in Physics Research: Section B B148(
1999)
964-968
Holt S, Brown A, Yuan S
An X-ray reflectivity study of the influence of anodic oxidation and annealing on interface structure in quantum well devices
Colloids and Surfaces A: Physicochemical and Engineering Aspects 155(1999) 85?91
Dowd A,
Elliman R,
Samoc M,
Luther-Davies BNonlinear Optical Response of Ge Nanocrystals in a Silica MatrixApplied Physics Letters 74,
2(
1999)
239-241
Deenapanray P, Auret F, Myburg G
Electrical Characterization and Annealing Properties of Electrically Active Defects Introduced in n-Si During Sputter Etching in an Ar-plasma
Nuclear Instruments and Methods in Physics Research: Section B B148(1999) 300-305
Deenapanray P, Petravic M
Angular and Energy Dependence of the Ion Beam Oxidation of Si Using Oxygen Ions from a Duoplasmatron Source
Surface and Interface Analysis 27(1999) 92-97
Deenapanray P, Petravic M
On the Migration Behaviour of Metal Impurities in Si During Secondary Ion Mass Spectrometry Profiling Using Low-Energy Oxygen Ions
Journal of Applied Physics 85, 8(1999) 3993-3998
Cohen M,
Tan H,
Jagadish CIntermixing induced resonance shift in GaAs/AlxOy distributed Bragg resonatorsJournal of Applied Physics 85(
1999)
7964-7966
Choi S,
Elliman RReversible Charging Effects in SiO2 Films Containing Si NanocrystalsApplied Physics Letters 75,
7(
1999)
968-970
Choi S,
Elliman RNegative Photoconductivity in SiO2 Films Containing Si NanocrystalsApplied Physics Letters 74,
26(
1999)
3987-3989
Cheylan S,
Cheylan S,
Manson N,
Manson N,
Elliman R,
Elliman RThe effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2Nuclear Instruments and Methods in Physics Research: Section B B148(
1999)
986-990
Chen Y,
Williams J,
Wang G,
Campbell SIncreased Dissolution of Ilmenite Induced by High-Energy Ball MillingMaterials Science and Engineering A 271/1-2(
1999)
485-490
Chen Y,
Fitzgerald J,
Williams J,
Bulcock SSynthesis of boron nitride nanotubes at low temperatures using reactive ball millingChemical Physics Letters 299(3-4)(
1999)
260-264
Chen Y, Fitzgerald J, Chadderton L, Chaffron L
Nanoporous Carbon Produced by Ball Milling
Applied Physics Letters 74, 19(1999) 2782-2784
Chen Y,
Chadderton L,
Fitzgerald J,
Williams JA solid-state process for formation of boron nitride nanotubesApplied Physics Letters 74(
1999)
2960-2962
Hoffman A, Petravic M, Comtet G, Heurtel A, Hellner L, Dujardin G
Photon-stimulated desorption of H+ and H- ions from diamond surfaces: Evidence for direct and indirect processes
Physical Review B 59(1999) 3203-3209
Iordache G,
Buda M,
Acket G,
van de Roer T,
Kaufmann L,
Karouta F,
Jagadish C,
Tan HContinuous wave operation of low confinement asymmetric structure diode lasersElectronics Letters 35(
1999)
148-149
Tarnopolskaya T, de Hoog F, Tarnopolsky A, Fletcher N
Vibration of Beams and Helices with Arbitrarily Large Uniform Curvature
Journal of Sound and Vibration 228(1999) 305-332
McCallum JThe Kinetics of Dopant-Enhanced Solid Phase Epitaxy in H-Free Amorphous Silicon LayersNuclear Instruments and Methods in Physics Research: Section B B148(
1999)
350-354
Tarnopolskaya T, de Hoog F, Fletcher N
Low-Frequency Mode Transition in the Free In-Plane Vibration of Curved Beams
Journal of Sound and Vibration 228(1999) 69-90
Tan H,
Jagadish C,
Lederer M,
Luther-Davies B,
Zou J,
Cockayne D,
Haiml M,
Siegner U,
Keller URole of Implantation-Induced Defects on the Response Time of Semiconductor Saturable AbsorbersApplied Physics Letters 75,
10(
1999)
1437-1439
Shan W, Yu K, Walukiewicz W, Ager J, Haller E, Ridgway M
Reduction of Band-Gap Energy in GaNAs and AlGaNAs Synthesized by N+ Implantation
Applied Physics Letters 75, 10(1999) 1410-1412
Schmidt M, Kaczmarek W
Synthesis of SrFeO2.5 from Mechanically Activated Reactants
Journal of Alloys and Compounds 283(1999) 117-121
Ridgway M, Glover C, Yu K, Foran G, Clerc C, Hansen J, Nylandsted-Larsen A
Composition-dependent bondlengths in crystalline and amorphous GexSi1-x alloys
Physical Review B 60(1999) 10831-10836
Ridgway M, Glover C, Foran G, Yu K
Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements
Nuclear Instruments and Methods in Physics Research: Section B 147(1999) 148-154
Ridgway M, Glover C, Bezakova E, Byrne A, Foran G, Yu K
Atomic-level characterisation of ion-induced amorphisation in compound semiconductors
Nuclear Instruments and Methods in Physics Research: Section B B148(1999) 391-395
Rao M, Tucker J, Ridgway M, Holland O, Mittereder J
Ion implantation in bulk semi-insulating 4H-SiC
Journal of Applied Physics 86(1999) 752-758
Rao M, Berry A, Do T, Ridgway M, Chi P
S and Si ion implantation in GaSb grown on GaAs
Journal of Applied Physics 86(1999) 6068-6071
Papanicolaou N, Rao M, Molnar B, Tucker J, Edwards A, Holland O, Ridgway M
Ion implantation of SiC and GaN
Nuclear Instruments and Methods in Physics Research: Section B B148(1999) 416-420
Ophel T,
Timmers H,
Elliman RWindow Effects in a Large Solid Angle, Position-Sensitive Gas Ionisation Detector for Elastic Recoil Detection Analysis (ERDA)Nuclear Instruments and Methods in Physics Research: Section A A423(
1999)
381-393
McCallum J,
Morpeth LSynthesis of Ti: Sapphire by Ion ImplantationNuclear Instruments and Methods in Physics Research: Section B B148(
1999)
726-729
Manasreh M,
Ballet P,
Smathers J,
Salamo G,
Jagadish CProton irradiation effects on the inter sub-band transitions in GaAs/AlGaAs multiple quantum wells with bulk and superlattice barriersApplied Physics Letters 75(
1999)
525-527
Johnston M,
Gal M,
Chen Z,
Liu Q,
Li N,
Lu W,
Shen H,
Fu L,
Tan H,
Jagadish C,
Li NInterdiffused quantum well infrared photodetector tuning for colour sensitive arraysApplied Physics Letters 75(
1999)
923-925
Mamor M, Auret F, Goodman S, Brink J, Hayes M, Meyer F, Vantomme A, Langouche G, Deenapanray P
Deep Level Properties of Erbium Implanted Epitaxially Grown SiGe
Nuclear Instruments and Methods in Physics Research: Section B 148(1999) 523-527
Lobo C, Leon R, Marcinkevicius S, Yang W, Sercel P, Liao X, Zou J, Cockayne D
Inhibited carrier transfer in ensembles of isolated quantum dots
Physical Review B 60, 24(1999) 16 647 - 16 651
Liu Q,
Lu W,
Li Z,
Chen Y,
Shen H,
Fu Y,
Willander M,
Tan H,
Yuan S,
Jagadish C,
Zou J,
Cockayne DSpatially resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealingApplied Physics Letters 75(
1999)
3339-3341
Liu Q,
Chen X,
Lu W,
Xu W,
Yuan X,
Li N,
Shen H,
Yuan S,
Tan H,
Jagadish C,
Li NWavelength tuning of GaAs/AlGaAs quantum well infrared photodetectors by thermal interdiffusionJapanese Journal of Applied Physics 38(
1999)
5044-5045
Liao X, Zou J, Cockayne D, Leon R, Lobo C
Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots
Physical Review Letters 82, 25(1999) 5148-5151
Li Z,
Wong-Leung J,
Deenapanray P,
Conway M,
Chivers D,
Fitzgerald J,
Williams JThe Role of Fe on the Crystallisation of a-Si3N4 from Amorphous Si-N Formed by Ion ImplantationNuclear Instruments and Methods in Physics Research: Section B 148(
1999)
534-539
Li Z,
Williams J,
Llewellyn D,
Giersig MMechanochemical Reaction and Formation of an Amorphous Nitride Phase During Ball Milling of Si in NH3Applied Physics Letters 75,
20(
1999)
3111-3113
Leon R, Okuno J, Lawton R, Stevens-Kalceff M, Phillips M, Zou J, Cockayne D, Lobo C
Dislocation-induced changes in quantum dots: step alignment and radiative emission
Applied Physics Letters 74(1999) 2301-2304
Kinomura A,
Williams J,
Fujii KMass Effects on Regrowth Rates and Activation Energies of Solid-Phase Epitaxy Induced by Ion Beams in SiliconPhysical Review B 59,
23(
1999)
15 214-15 224
Kinomura A,
Chayahara A,
Tsubouchi N,
Horino Y,
Williams JActivation Energies for Light Ions in Ion Beam Induced Epitaxial CrystallizationNuclear Instruments and Methods in Physics Research: Section B 148(
1999)
370-374
Kerr-Menz A, Welham N
Low Temperature Mechanochemical Formation of Titanium Carbonitride
Nanostructured Materials 11, 2(1999) 233-239
Yuan S,
Tan H,
Jagadish C,
Lu W,
Yuan XTuning of detection wavelength of GaAs/AlGaAs quantum-well IR photo-detectors by thermal interdiffusionGriffith Asia Quarterly (
1999)
128-130