In this project we aim to design and demonstrate  III-V compound semiconductor based quantum well nanowire light emitting devices with wavelength ranging from 1.3 to 1.6 μm for optical communication applications.

Semiconductor nanowires are emerging nano-materials with substantial opportunities for novel photonic and quantum device applications. This project aims at developing a new generation of high performance NW based photodetectors for a wide range of applications.

This project aims to demonstrate semiconductor nanowire based infrared avalanche photodetectors (APDs) with ultra-high sensitivity towards single photon detection. By employing the advantages of their unique one-dimensional nanoscale geometry, the nanowire APDs can be engineered to different device architectures to achieve performance superior to their conventional counterparts. This will contribute to the development of next generation infrared photodetector technology enabling numerous emerging fields in modern transportation, communication, quantum computation and information processing.