EME publications 2003

2003

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Journal article

Boudinov H, Coelho A, Tan H, Jagadish C
Characterization of Deep Level Traps Responsible for Isolation of Proton Implanted GaAs
Journal of Applied Physics 93, 6(2003) 3234-3238

Bradby J, Williams J, Swain M
In Situ Electrical Characterization of Phase Transformations in Si during Indentation
Physical Review B 67(2003) 085205-1-9

Brett D, De Medeiros Azevedo G, Llewellyn D, Ridgway M
Gettering of Pd to Implantation-induced Nanocavities in Si
Applied Physics Letters 83, 5(2003) 946-947

Buda M, Hay J, Tan H, Fu L, Jagadish C, Reece P, Gal M
Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures
Journal of the Electrochemical Society 150, 8(2003) G481-G487

Buda M, Hay J, Tan H, Wong-Leung J, Jagadish C
Low Loss, Thin p-clad 980-nm InGaAs Semiconductor Laser Diodes with an Asymmetric Structure Design
IEEE Journal of Quantum Electronics 39, 5(2003) 625-633

Buda M, Tan H, Fu L, Josyula L, Jagadish C
Improvement of the Kink-free Operation in Ridge-waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge
IEEE Photonics Technology Letters 15, 12(2003) 1686-1688

Carmody C, Tan H, Jagadish C
Electrical Isolation of n- and p-In_0.53Ga_0.47As Epilayers using Ion Irradiation
Journal of Applied Physics 94, 10(2003) 6616-6620

Carmody C, Tan H, Jagadish C
Influence of Cap Layer on Implantation Induced Interdiffusion in InP/InGaAs Quantum Wells
Journal of Applied Physics 93, 8(2003) 4468-4470

Carmody C, Tan H, Jagadish C, Gaarder A, Marcinkevicius S
Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
Applied Physics Letters 82, 22(2003) 3913-3915

Carmody C, Tan H, Jagadish C, Gaarder A, Marcinkevicius S
Ultrafast carrier trapping and recombination in highly resistive ion implanted InP
Journal of Applied Physics 94, 2(2003) 1074-1078

Chen Y, Conway M, Fitzgerald J
Carbon nanotubes formed in graphite after mechanical grinding and thermal annealing
Applied Physics A: Materials Science and Processing 76(2003) 633-636

De Medeiros Azevedo G, Glover C, Ridgway M, Yu K, Foran G
Direct Evidence of Defect Annihilation during Structural Relaxation of Amorphous Indium Phosphide
Physical Review B: Condensed Matter and Materials 68(2003) 115204-1-6

De Medeiros Azevedo G, Glover C, Yu K, Foran G, Ridgway M
Direct Observation of Structural Relaxation in Amorphous Compound Semiconductors
Nuclear Instruments and Methods in Physics Research: Section B 206(2003) 1024-1027

De Medeiros Azevedo G, Ridgway M, Betlehem J, Yu K, Glover C, Foran G
EXAFS Measurements of Metal-decorated Nanocavities in Si
Nuclear Instruments and Methods in Physics Research: Section B 199(2003) 179-184

Deenapanray P, Auret F
Deep Level Transient Spectroscopy of Defects Introduced in Si and SiGe by Low Energy Particles
Journal of Physics: Condensed Matter 15(2003) S2859-S2886

Deenapanray P, Coleman V, Jagadish C
Electrical Characterization of Impurity-free Disordered p-type GaAs
Electrochemical and Solid-State Letters 6, 3(2003) G37-G40

Deenapanray P, Gao Q, Jagadish C
Implant Isolation of Zn-doped GaAs Epilayers: Effects of Ion Species, Doping Concentration, and Implantation Temperature
Journal of Applied Physics 93, 11(2003) 9123-9129

Deenapanray P, Meyer W, Auret F, Krispin M, Jagadish C
Electron emission properties of a defect at ~(E_c?0.23eV) in impurity-free disorded n-GaAs
Physica B 340-342(2003) 315-319

Deenapanray P, Petravic M, Kim K, Kim B, Li G
Compositional Changes on GaN Surfaces under Low-energy Ion Bombardment Studied by Synchrotron-based Spectroscopies
Applied Physics Letters 83, 24(2003) 4948-4950

Deenapanray P, Svensson B, Tan H, Jagadish C
A Comparison of Low-energy As Ion Implantation and Impurity-free Disordering Induced Defects in N-type GaAs Epitaxial Layers
Japanese Journal of Applied Physics 42, 3(2003) 1158-1163

Deenapanray P, Tan H, Jagadish C
Electrical Characterization of Impurity-free Disordering-induced Defects in n-GaAs using Native Oxide Layers
Applied Physics A: Materials Science and Processing 76(2003) 961-964

Doshi S, Deenapanray P, Tan H, Jagadish C
Towards a Better Understanding of the Operative Mechanisms Underlying Impurity-free Disordering of GaAs: Effect of Stress
Journal of Vacuum Science and Technology B 21, 1(2003) 198-203

Elliman R, Lederer M, Smith N, Luther-Davies B
The Fabrication and Properties of Silicon-nanocrystal-based Devices and Structures Produced by Ion Implantation - The Search for Gain
Nuclear Instruments and Methods in Physics Research: Section B 206(2003) 427-431

Fitzgerald J, Chen Y, Conway M
Nanotube growth during annealing of mechanically milled Boron
Applied Physics A: Materials Science and Processing 76(2003) 107-110

Fletcher N
Australian Aboriginal Musical Instruments: The Didjeridu, The Bullroarer and the Gumleaf
Acoustics Australia 31, 2(2003) 51-54

Fu L, McGowan P, Tan H, Jagadish C, Reece P, Gal M
Suppression of Interdiffusion in InGaAs/GaAs Quantum Dots using Dielectric Layer of Titanium Dioxide
Applied Physics Letters 82, 16(2003) 2613-2615

Fujisawa N, James N, Tarrant R, McKenzie D, Woodard J, Swain M
A Novel Pin-On-Apparatus
WEAR 254(2003) 111-119

Fujisawa N, Swain M, James N, Woodard J, Tarrant R, McKenzie D
Carbon Coating of Ti-6A1-4V for Reduced Wear in Combined Impact and Sliding Applications
Tribology International 36(2003) 873-882

Gao Q, Deenapanray P, Tan H, Jagadish C
Implantation-induced Electrical Isolation of GaAsN Epilayers Grown by Metalorganic Chemical Vapor Deposition
Applied Physics Letters 83, 16(2003) 3386-3388

Gao Q, Tan H, Jagadish C, Deenapanray P
Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition
Japanese Journal of Applied Physics 42(2003) 6827-6832

Glover C, Foran G, Ridgway M
Structure of Amorphous Silicon Investigated by EXAFS
Nuclear Instruments and Methods in Physics Research: Section B 199(2003) 195-199

Harding R, Davies G, Coleman P, Burrows C, Wong-Leung J
Study of defects in ion-implanted silicon using photoluminescence and positron annihilation
Physica B 340-342(2003) 738-742

Hattori H, Letartre X, Seassal C, Rojo-Romeo P, Leclercq J, Viktorovitch P
Analysis of Hybrid Photonic Crystal Vertical Cavity Surface Emitting Lasers
Optics Express 11, 15(2003) 1799-1808

Ip K, Overberg M, Baik K, Wilson R, Kucheyev S, Williams J, Jagadish C, Ren F, Heo Y, Norton D, Zavada J, Pearton S
ICP Dry Etching of ZnO and Effects of Hydrogen
Solid-State Electronics 47(2003) 2289-2294

Ip K, Overberg M, Heo Y, Norton D, Pearton S, Stutz C, Kucheyev S, Jagadish C, Williams J, Luo B, Ren F, Look D, Zavada J
Hydrogen Incorporation, Diffusivity and Evolution in Bulk ZnO
Solid-State Electronics 47(2003) 2255-2259

Kim B, Ok Y, Seong T, Ashrafi A, Kumano H, Suemune I
Structural Properties of CdO Layers Grown on GaAs (001) Substrates by Metalorganic Molecular Beam Epitaxy
Journal of Crystal Growth 252(2003) 219-225

Kim S, Han I, Chung S, Jagadish C
Growth of Triangular Shaped InGaAs/GaAs Quantum Wire Structures
Journal of Materials Science Letters 22(2003) 467-469

Kucheyev S, Jagadish C, Williams J, Deenapanray P, Yano M, Koike K, Sasa S, Inoue M, Ogata K
Implant Isolation of ZnO
Journal of Applied Physics 93, 5(2003) 2972-2976

Kucheyev S, Williams J, Jagadish C, Zou J, Evans C, Nelson A, Hamza A
Ion-Beam-Produced Structural Defects in ZnO
Physical Review B 67, 9(2003) 094115-1-11

Kuznetsov A, Wong-Leung J, Hallen A, Jagadish C, Svensson B
Dynamic Annealing in Ion Implanted SiC: Flux versus Temperature Dependance
Journal of Applied Physics 94, 11(2003) 7112-7115

Lay M, McCallum J, Jagadish C
Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon
Physica B 340-342(2003) 748-751

Leveque P, Hallen A, Svensson B, Wong-Leung J, Jagadish C, Privitera V
Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon
European Physical Journal - Applied Physics 23(2003) 5-9

Leveque P, Kortegaard-Nielsen H, Pellegrino P, Hallen A, Svensson B, Kuznetsov A, Wong-Leung J, Jagadish C, Privitera V
Vacancy and Interstitial Depth Profiles in Ion-implanted Silicon
Journal of Applied Physics 93, 2(2003) 871-877

McGowan P, Tan H, Jagadish C, Reece P, Gal M
Proton-Irradiation-Induced Intermixing in InGaAs Quantum Dots
Applied Physics Letters 82(2003) 2053-2055

Li C, Lee C, Ma X, Wang N, Zhang R, Lee S
Growth Direction and Cross-Sectional Study of Silicon Nanowires
Advanced Materials 15, 7-8(2003) 607-609

Li Q, Fang Z, Xu S, Li G, Xie M, Tong S, Zhang X, Liu W, Chua S
Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
Physica Status Solidi B (On-line) 235, 2(2003) 427-431

Li Z, Lu W, Liu Q, Chen X, Shen S, Fu Y, Willander M, Tan H, Jagadish C
Determination of Carrier-transfer Length from Side-wall Quantum Well to Quantum Wire by Micro-photoluminescence Scanning
Journal of Electronic Materials 32, 8(2003) 913-916

Linnarsson M, Zimmermann U, Wong-Leung J, Schoner A, Janson M, Jagadish C, Svensson B
Solubility Limits of Dopants in 4H-SiC
Applied Surface Science 203-204(2003) 427-432

Liu A, McCallum J, Deenapanray P
Defective Crystal Recovered from the Crystallization of Potassium-doped Amorphous Silicon Films
Journal of the Electrochemical Society 150, 4(2003) G266-G270

Lu F, Qiao D, Cai M, Yu L, Lau S, Fu R, Hung L, Li C, Chu P, Chien H, Liou Y
Ion-Cutting of Si onto Glass by Pulsed and Direct-Current Plasma Immersion Ion Implantation
Journal of Vacuum Science and Technology B 21, 5(2003) 2109-2113

MacDonald D, Maeckel H, Doshi S, Brendle W, Cuevas A, Williams J, Conway M
Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon
Applied Physics Letters 82, 18(2003) 2987-2989

McKenzie D, Tarrant R, Bilek M, Ha T, Zou J, McBride W, Cockayne D, Fujisawa N, Swain M, James N, Woodard J, McCulloch D
Multilayered Carbon Films for Tribological Applications
Diamond and Related Materials 12(2003) 178-184

Petravic M, Deenapanray P, Usher B, Kim K, Kim B
High-resolution Photoemission Study of Hydrogen Interaction with Polar and Nonpolar GaAs Surfaces
Physical Review B 67(2003) 195325-1-8

Rao M, Brookshire J, Mitra S, Qadri S, Fischer R, Grun J, Papanicolaou N, Yousuf M, Ridgway M
Athermal Annealing of Si-implanted GaAs and InP
Journal of Applied Physics 94, 1(2003) 130-135

Ridgway M, De Medeiros Azevedo G, Glover C, Yu K, Foran G
Common Structure in Amorphised Compound Semiconductors
Nuclear Instruments and Methods in Physics Research: Section B 199(2003) 235-239

Ruault M, Ridgway M, Fortuna F, Bernas H, Williams J
In-situ Microscopy Study of Nanocavity Shrinkage in Si under Ion Beam Irradiation
European Physical Journal - Applied Physics 23(2003) 39-40

Ruault M, Ridgway M, Fortuna F, Bernas H, Williams J
Shrinkage Mechanism of Nanocavities in Amorphous Si under Ion Irradiation: An in situ Study
Nuclear Instruments and Methods in Physics Research: Section B 206(2003) 912-915

Scarpulla M, Dubon O, Yu K, Monteiro O, Pillai M, Aziz M, Ridgway M
Ferromagnetic Ga_1-xMn_xAs Produced by Ion Implantation and Pulsed-laser Melting
Applied Physics Letters 82, 8(2003) 1251-1253

Sears K, Buda M, Wong-Leung J, Fu L, Jagadish C, Stiff-Roberts A, Bhattacharya P
Influence of Rapid Thermal Annealing on a 30 Stack InAs/GaAs Quantum Dot Infrared Photodetector
Journal of Applied Physics 94, 8(2003) 5283-5289

Sun B, Gal M, Gao Q, Tan H, Jagadish C, Puzzer T, Ouyang L, Zou J
Epitaxially Grown GaAsN Random Laser
Journal of Applied Physics 93, 10(2003) 5855-5858

Teo B, Li C, Sun X, Wong N, Lee S
Silicon-Silica Nanowires, Nanotubes, and Biaxial Nanowires: Inside, Outside, and Side-by-Side Growth of Silicon Versus Silica on Zeolite
Inorganic Chemistry 42, 21(2003) 6723-6728

Valenta J, Linnros J, Juhasz R, Rehspringer J, Huber F, Hirlimann C, Cheylan S, Elliman R
Photonic Band-gap Effects on Photoluminescence of Silicon Nanocrystals Embedded in Artificial Opals
Journal of Applied Physics 93, 8(2003) 4471-4474

Valenta J, Pelant I, Luterova K, Tomasiunas R, Cheylan S, Elliman R, Linnros J, Honerlage B
Active Planar Optical Waveguide Made from Luminescent Silicon Nanocrystals
Applied Physics Letters 82, 6(2003) 955-957

Wang Y, Zou J, Kucheyev S, Williams J, Jagadish C, Li G
Nature of Planar Defects in Ion-implanted GaN
Electrochemical and Solid-State Letters 6, 3(2003) G34-G36

Wilkinson A, Elliman R
Kinetics of H₂ Passivation of Si Nanocrystals in SiO₂
Physical Review B 68(2003) 155302-1-8

Wilkinson A, Elliman R
Passivation of Si Nanocrystals in SiO₂: Atomic Versus Molecular Hydrogen
Applied Physics Letters 83, 26(2003) 5512-5514

Wong-Leung J, Janson M, Svensson B
Effect of Crystal Orientation on the Implant Profile of 60keV Al into 4H-SiC Crystals
Journal of Applied Physics 93, 11(2003) 8914-8917

Wong-Leung J, Linnarsson M, Svensson B
A Comparison of Extended Defect Formation Induced by Ion Implantation in (0001) and (1120)4H-SiC
Physica B 340-342(2003) 132-136

Wong W, Li C, Au F, Fung M, Sun X, Lee C, Lee S, Zhu W
Fabrication and Characterization of Pure and Well-Aligned Carbon Nanotubes Using Methane/Nitrogen - Ammonia Plasma
Journal of Physical Chemistry B 107(2003) 1514-1517

Xu S, Wang H, Cheung S, Li Q, Dian X, Xie M, Tong S
Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates
Applied Physics Letters 83, 17(2003) 3477-3479

Yu K, Walukiewicz W, Wu J, Shan W, Beeman J, Scarpulla M, Dubon O, Ridgway M, Mars D, Chamberlin D
Mutual Passivation of Group IV Donors and Nitrogen in Diluted GaN_xAs_1-x Alloys
Applied Physics Letters 83, 14(2003) 2844-2846

Yu K, Wu J, Walukiewicz W, Shan W, Beeman J, Mars D, Chamberlin D, Scarpulla M, Dubon O, Ridgway M, Geisz J
Mutual Passivation of Group IV Donors and Isovalent Nitrogen in Diluted GaN_xAs_1-x Alloys
Physica B 340-342(2003) 389-393

Zhao Q, Kluth P, Bay H, Mantl S
Fabrication of Schottky Barrier MOSFETs using Self-Assembly CoSi2 Nanopatterning and Spacer Gate Technologies
Microelectronic Engineering 70(2003) 186-190

Zhao Q, Kluth P, Winnerl S, Mantl S
Fabrication of Schottky Barrier MOSFETs on SOI by a Self-Assembly CoSi2-Patterning Method
Solid-State Electronics 47(2003) 1183-1186

Zhou X, Hu J, Li C, Ma D, Lee C, Lee S
Silicon Nanowires as Chemical Sensors
Chemical Physics Letters 369, 1-2(2003) 220-224

Elliman R
President's column
Australian Physics 40, 3(2003) 67-

Lederer M, Kolev V, Luther-Davies B, Tan H, Jagadish C
Passively mode-locked, self-frequency doubled, diode-pumped Yb:YAl3(BO3)4 laser
Journal of Environmental Chemical Engineering 71(2003) 158-160

Caroff-Gaonac'h P
Formation of InAs islands on InP(3 1 1)B surface by molecular beam epitaxy
Journal of Crystal Growth 257, 1-2(2003) 104-109

Fletcher N
Condenser microphones - A tutorial
Canadian Acoustics 31, 2(2003) 35-39

Jagadish C
Nano-optoelectronics
Australian Physics 40, 1(2003) 26-

Yuan S
Effects of pulsed anodic oxide on the intermixing in InGaAs/GaAs and LnGaAs/AlGaAs quantum wells
Journal of Applied Physics 93, 12(2003) 9823-9829

(81 publications)

Conference paper

Buda M, Jagadish C
Computation of the Modal Reflectivity for a Partially Etched Mirror: Application for Integration of a Laser Diode and a Waveguide
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?(2003) 137-140

Buda M, Tan H, Fu L, Josyula L, Jagadish C
Improvement of Kink-free Operation in InGaAs/GaAs/AlGaAs High Power, Ridge Waveguide Laser Diodes
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?(2003) 25-28

Carmody C, Tan H, Jagadish C
Evolution of InGaAs/InP Quantum Well Intermixing as a Function of Cap Layer
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?(2003) 491-494

Carmody C, Tan H, Jagadish C, Zou J, Dao L, Gal M
Structural, Electrical and Optical Properties of MEV As⁺ Ion Implanted InP
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?(2003) 487-490

Coleman V, Deenapanray P, Tan H, Jagadish C
Atomic Relocation of Fast Diffusers in Impurity-free Disordered P-type GaAs
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?(2003) 495-498

Fletcher N
Acoustics of the Syrinx or Panpipes
Western Pacific Acoustics Conference 2003 ?, ?(2003) TB31-1-4

Fu L, McGowan P, Tan H, Jagadish C, Reece P, Gal M
Suppression of Interdiffusion in In_0.5Ga_0.5As/GaAs Quantum Dots
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?(2003) 503-506

Gao Q, Tan H, Jagadish C, Sun B, Gal M, Ouyang L, Zou J
Growth and Characterization of GaAsN Bulk Layer and (InGaAsN Quantum-well Structures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?(2003) 247-250

Lay M, McCallum J, De Medeiros Azevedo G, Deenapanray P, Jagadish C
A Deep Level Transient Spectroscopy Study of Vacancy-related Defect Profiles in Channeled Ion Implanted Silicon
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?(2003) 437-440

McGowan P, Tan H, Jagadish C
Growth of InGaAs Quantum Dots by Metal Organic Chemical Vapour Deposition
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?(2003) 307-310

McGowan P, Tan H, Reece P, Gal M, Jagadish C
Interdiffusion in InGaAs Quantum Dots by Ion Implantation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?(2003) 515-518

Smith N, Lederer M, Samoc M, Luther-Davies B, Elliman R
Pump-probe Measurements using Silicon Nanocrystal Waveguides
Materials Research Society Meeting Spring 2003 ?, ?(2003) 63-68

Spooner M, Walsh T, Elliman R
Effect of Microcavity Structures on the Photoluminescence of Silicon Nanocrystals
Materials Research Society Meeting Spring 2003 ?, ?(2003) 51-56

Sun B, Gal M, Gao Q, Tan H, Jagadish C
Properties of Radiative Recombination in GaAsN Epilayers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?(2003) 483-486

Wilkinson A, Elliman R
Hydrogen Passivation Kinetics of Si Nanocrystals in SiO₂
Materials Research Society Meeting Spring 2003 770(2003) 81-86

Williams J, Elliman R, Tan H, McGowan P, Wong-Leung J, Jagadish C
Production and Processing of Semiconductor Nanocrystals and Nanostructures for Photonic Applications
National Conference and Exhibition on Nanotechnology 2003 ?, ?(2003) 74-80

(16 publications)

Journal short contribution (non refereed)

Fletcher N
What is the Meaning of Physics?
Australian Physics 40, 4(2003) 109-111

(1 publications)