EME publications 2000
2000
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Journal article
Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon
Journal of Applied Physics 88(2000) 1312-1318
Effect of implant temperature on extended defects created by ion implantation in silicon
Defects and Diffusion Forum Part A: Defect and Diffusion Forum 183, 1(2000) 163-169
Preferential Amorphization and Defect Annihilation at Nanocavities in Silicon Durion Ion Irradiation
Applied Physics Letters 77(2000) 4280-4282
Ion Beam Induced Epitaxy Experiments in Silicon under Channeling and Random Alignments
Nuclear Instruments and Methods in Physics Research: Section B 161-163(2000) 505-509
Zinc and Group V Element Co-Implantation in Indium Phosphide
Nuclear Instruments and Methods in Physics Research: Section B 168(2000) 65-71
Nitrogen-induced enhancement of the free electron concentration in Sulfur implanted GaNxAs1-x
Applied Physics Letters 77(2000) 2858-2860
Application of high energy implantation in tuning the detection wavelength of quantum well infrared photodetectors
Journal of Environmental Chemical Engineering 1(2000) 88-89
Highly chemical reactive ion etching of gallium nitride
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1(2000)
Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
Journal of Applied Physics 88(2000) 2519-2522
Correlation of Energy-loss and collected-charge in Si DE detectors: measurements using an Enge spectrometer
Nuclear Instruments and Methods in Physics Research: Section B 164-165(2000) 186-190
Mechanochemical Formation of Metal-Ceramic Composites
Journal of the American Chemical Society 83(2000) 33-40
Ion Beam Induced Amorphous-Crystalline Phase Transition in Si: Quantitative Approach
Nuclear Instruments and Methods in Physics Research: Section B 168(2000) 375-388
Simplifying position-sensitive gas-ionization detectors for heavy ion elastic recoil detection
Nuclear Instruments and Methods in Physics Research: Section B 161-163(2000) 19-28
New design features of gas ionization detectors used for elastic recoil detection
Nuclear Instruments and Methods in Physics Research: Section A 447(2000) 536-543
Oscillating Reed Valves - An Experimental Study
Journal of the Acoustical Society of America 108(2000) 400-406
Imaging Charge Trap Distributions in GaN Using Environmental Scanning Electron Micrsocopy
Applied Physics Letters 77(2000) 1342-1344
Characterization of Silicon Oxynitride Films using Ion Beam Analysis Techniques
Nuclear Instruments and Methods in Physics Research: Section B 170(2000) 461-466
Solubilization of Zircon by Mechanically Induced Solid-State Cation Exchange with Alkaline Earth Oxides
Transactions of the Institution of Mining and Metallurgy Section C: Mineral Processing and Extractive Metallurgy 109(2000) C57-C60
Mechanical Activation of Coal
Fuel Processing Technology 68(2000) 75-82
Novel Route to Submicrometer Tungsten Carbide
AIChE Journal 46(2000) 68-71
The use of micro-raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1(2000)
Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147, 5(2000) 1950-1956
Exciton kinetics in self-assembled CdSe/ZnSe quantum dots
Journal of Environmental Chemical Engineering (2000) 87-
Using exciton dynamics to probe the internal structure of CdSe/ZnSe self-assembled quantum dots
Physica Status Solidi. B: Basic Research 221, 1(2000) 55-58
Phonons and exciton recombination in CdSe/ZnSe self-assembled quantum dots
Applied Physics Letters 77, 12(2000) 1813-1815
Measurement of the SMC muon beam polarization using the asymmetry in the elastic scattering off polarized electrons
Nuclear Instruments and Methods in Physics Research: Section A 443, 1(2000) 1-19
Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures
Japanese Journal of Applied Physics 39, 9 A(2000) 5124-5127
The micro-photoluminescence of a single V-groove GaAs/AlGaAs quantum wire
Wuli Xuebao/Acta Physica Sinica 49, 9(2000) 1812-1813
The use of micro-raman spectroscopy to monitor high-pressure hightemperature annealing of ion-implanted GaN films
Materials Research Society Symposium Proceedings 595(2000) W11461-W11466
Ion-beam-induced dissociation and bubble formation in GaN
Applied Physics Letters 77, 22(2000) 3577-3579
Raman spectral study of silicon nanowires: High-order scattering and phonon confinement effects
Physical Review B 61, 24(2000) 16827-16832
Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots
Physical Review B 62, 4(2000) 2737-2742
Growth of patterned thin epitaxial CoSi2-films by a titanium oxide mediated epitaxy process
Thin Solid Films 380, 1-2(2000) 201-203
The physiological demands of wind instrument performance
Acoustics Australia 28, 2(2000) 53-56
A class of chaotic bird calls?
Journal of the Acoustical Society of America 108, 2(2000) 821-826
Performance comparison of GaAs/AlGaAs quantum well infrared photodetectors grown by MOCVD and MBE
Journal of Environmental Chemical Engineering 21, 5(2000) 441-444
Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector
Journal of Environmental Chemical Engineering 19, 1(2000) 25-28
A history of musical acoustics research in Australia
Acoustics Australia 28, 3(2000) 97-101
Polarization stabilization in vertical-cavity surface-emitting lasers through asymmetric current injection
IEEE Photonics Technology Letters 12, 8(2000) 945-947
Properties of ion implanted epitaxial CoSi2/Si(1 0 0) after rapid thermal oxidation
Nuclear Instruments and Methods in Physics Research: Section B 164(2000) 1004-1009
Dynamic scaling of plasma etched InP surface
Journal of Environmental Chemical Engineering (2000) 201-204
Highly chemical reactive ion etching of gallium nitride
Materials Research Society Symposium Proceedings 595(2000) W11761-W11766
Photoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Micrsocopy Measurements on MeV Self-Ion Implanted and Annealed n-type Silicon
Journal of Applied Physics 88(2000) 2309-2317
Ion-Dose-Dependent Microstructure in Amorphous Ge
Physical Review B: Condensed Matter and Materials 61(2000) 12 586-12 589
Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
Electrochemical and Solid-State Letters 3(2000) 196-199
Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147(2000) 1950-1956
Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells
Materials Research Society Symposium Proceedings 607(2000) 491-502
Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells
Surface and Interface Analysis 29(2000) 754-760
Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers
Journal of Applied Physics 88(2000) 5255-5261
Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition
Applied Physics Letters 77(2000) 696-698
Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing
Applied Physics Letters 76(2000) 837-839
Enhanced Dissolution Following Extended Milling
AIChE Journal 46(2000) 666-669
Simultaneous Hydrogen Detection with an ERD Gas Ionization Detector
Nuclear Instruments and Methods in Physics Research: Section B 161-163(2000) 231-234
On the Segregation of Ca at SiO2/Si Interface During Oxygen Ion Bombardment
Surface and Interface Analysis 29(2000) 160-167
Segregation Effects of Li, K and F in Si During Depth Profiling by Oxygen Ions
Journal of Applied Physics 87(2000) 2178-2184
Intrinsic Defect-Related Blue-Violet and Ultraviolet Photoluminescence from Si+-Implanted Fused Silica
Applied Physics Letters 76(2000) 2062-2064
The Effect of Ion-Irradiation and Annealing on the Luminescence of Si Nanocrystals in SiO2
Nuclear Instruments and Methods in Physics Research: Section B 166-167(2000) 851-856
Solid-State Formation of Carbon and Boron Nitride Nanotubes
Materials Science Forum 343-346(2000) 63-67
Transmission Electron Microscopy Observation of Deformation Microstructure under Spherical Indentation in Silicon
Applied Physics Letters 77(2000) 3749-3751
Strain Development and Damage Accumulation During Neon Ion Implantation into Silicon at Elevated Temperatures
Journal of Applied Physics 88(2000) 1771-1775
Heavy-ion elastic-recoil detection ananlysis of doped-silica films for integrated photonics
Nuclear Instruments and Methods in Physics Research: Section B 161(2000) 624-628
Damage Accumulation in Si Crystal During Ion Implantation at Elevated Temperatures: Evidence of Chemical Effects
Journal of Applied Physics 87(2000) 8385-8388
Photoluminescence in delta-doped InGaAs/GaAs single quantum wells
Journal of Applied Physics 87(2000) 3896-3899
A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells
Journal of Applied Physics 88(2000) 5252-5254
Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
Physical Review B 61(2000) 8306-8311
Strong photosensitivity in tin-doped silica films
Electronics Letters 36, 9(2000) 842-843
Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
Journal of Applied Physics 87(2000) 1566-1568
Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures
Physics Letters A 271(2000) 213-216
Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing
Japanese Journal of Applied Physics 39(2000) 1687-1689
Investigation of AlGaAs/GaAs V-grooved Quantum Wire Infrared
Japanese Journal of Applied Physics 39(2000) 5124-5127
Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers
Applied Physics Letters 76(2000) 1306-1308
GaAs delta-doped layers in Si for evaluation of SIMS depth resolution
Surface and Interface Analysis 29(2000) 362-268
Photon-stimulated desorption of hydrogen ions from semiconductor surfaces: evidence for direct and indirect processes
Fizika A 8(2000) 275-284
Selective photon-stimulated desorption of hydrogen from GaAs surfaces
Physical Review Letters 84(2000) 2255-2258
Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi
Physical Review B 62(2000) 12 882-12 887
Ion beam induced dissociation and bubble formation in GaN
Applied Physics Letters 77(2000) 3577-3579
Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment
Journal of Applied Physics 88(2000) 5493-5495
Comparison of the Annealing Characteristics of Resistivity and Vacancy Defects for Implant Isolated n-type GaAs
Journal of Applied Physics 87, 2(2000) 663-
Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells
Applied Physics Letters 77(2000) 2867-2869
Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/A10.3Ga0.7As Multiple Quantum Wells
Materials Research Society Symposium Proceedings 607(2000) 217-222
High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering
Journal of Applied Physics 87(2000) 2736-2741
Nanoindentation of Epitaxial GaN Films
Applied Physics Letters 77(2000) 3373-3375
Damage Buildup in GaN under Ion Bombardment
Physical Review B 62(2000) 7510-7522
Ion-Beam-Induced Porosity of GaN
Applied Physics Letters 77(2000) 1455-1457
Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN
Applied Physics Letters 76(2000) 3899-3901
Transport and quantum electron mobility in the modulation Si d-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy
Applied Physics Letters 77(2000) 999-1001
(86 publications)
Conference paper
Charge Contrast in SE Images Obtained Using the ESEM
Institute of Physics Conference No 165 (2000) ?, ?(2000) 275-276
On the Angular Dependence of Profile Broadening in Silicon Under Oxygen and Nitrogen Bombardment
Secondary Ion Mass Spectrometry (SIMS 1999) ?, ?(2000) 545-548
(2 publications)
Journal short contribution (non refereed)
Al and Ag diffusion study in alpha-titanium
Applied Physics A: Materials Science and Processing 71, 2(2000) 169-174
(1 publications)
Journal article (non-refereed)
Micro- and macrostructure of implantation-induced disorder in Ge
Nuclear Instruments and Methods in Physics Research: Section B 161-163(2000) 1033-1037
(1 publications)
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