Babinski M,
Siwiec-Matuszyk J,
Baranowski J,
Li G,
Jagadish CTransport and quantum electron mobility in the modulation Si d-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxyApplied Physics Letters 77(
2000)
999-1001
Zhao Q,
Willander M,
Lu W,
Liu Q,
Shen S,
Tan H,
Jagadish C,
Zou J,
Cockayne DOptical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wiresJournal of Applied Physics 88(
2000)
2519-2522
Yu K, Walukiewicz W, Shan W, Wu J, Ager J, Haller E, Garza J, Ridgway M
Nitrogen-induced enhancement of the free electron concentration in Sulfur implanted GaNxAs1-x
Applied Physics Letters 77(2000) 2858-2860
Wong-Leung J,
Fatima S,
Jagadish C,
Fitzgerald J,
Chou C,
Zou J,
Cockayne DTransmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in SiliconJournal of Applied Physics 88(
2000)
1312-1318
Wong-Leung J,
Fatima S,
Jagadish C,
Fitzgerald JEffect of implant temperature on extended defects created by ion implantation in siliconDefects and Diffusion Forum Part A: Defect and Diffusion Forum 183,
1(
2000)
163-169
Williams J,
Zhu X,
Ridgway M,
Conway M,
Williams B,
Fortuna F,
Ruault M,
Bernas HPreferential Amorphization and Defect Annihilation at Nanocavities in Silicon Durion Ion IrradiationApplied Physics Letters 77(
2000)
4280-4282
Welham N, Welham N, Willis P, Kerr T
Mechanochemical Formation of Metal-Ceramic Composites
Journal of the American Chemical Society 83(2000) 33-40
Fu L,
Tan H,
Jagadish CApplication of high energy implantation in tuning the detection wavelength of quantum well infrared photodetectorsJournal of Environmental Chemical Engineering 1(
2000)
88-89
Welham N, Welham N, Walmsley L
Solubilization of Zircon by Mechanically Induced Solid-State Cation Exchange with Alkaline Earth Oxides
Transactions of the Institution of Mining and Metallurgy Section C: Mineral Processing and Extractive Metallurgy 109(2000) C57-C60
Welham N, Welham N, Chapman P
Mechanical Activation of Coal
Fuel Processing Technology 68(2000) 75-82
Welham N, Welham N
Novel Route to Submicrometer Tungsten Carbide
AIChE Journal 46(2000) 68-71
Toth M,
Kucheyev S,
Williams J,
Jagadish C,
Phillips M,
Li GImaging Charge Trap Distributions in GaN Using Environmental Scanning Electron MicrsocopyApplied Physics Letters 77(
2000)
1342-1344
Titov A, Kucheyev S
Ion Beam Induced Amorphous-Crystalline Phase Transition in Si: Quantitative Approach
Nuclear Instruments and Methods in Physics Research: Section B 168(2000) 375-388
Karouta F
Highly chemical reactive ion etching of gallium nitride
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1(2000)
Tan H,
Williams J,
Jagadish CThe use of micro-raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN filmsMRS Internet Journal of Nitride Semiconductor Research 5,
SUPPL. 1(
2000)
Schmidt D,
Svensson B,
Seibt M,
Jagadish C,
Davies GPhotoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Micrsocopy Measurements on MeV Self-Ion Implanted and Annealed n-type SiliconJournal of Applied Physics 88(
2000)
2309-2317
Lobo C
Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots
Physical Review B 62, 4(2000) 2737-2742
Williams J,
Jagadish CIon-beam-induced dissociation and bubble formation in GaNApplied Physics Letters 77,
22(
2000)
3577-3579
Wang R, Zhang H, Zhang H
Raman spectral study of silicon nanowires: High-order scattering and phonon confinement effects
Physical Review B 61, 24(2000) 16827-16832
Tan H,
Jagadish CThe micro-photoluminescence of a single V-groove GaAs/AlGaAs quantum wireWuli Xuebao/Acta Physica Sinica 49,
9(
2000)
1812-1813
Tan H,
Jagadish CInvestigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structuresJapanese Journal of Applied Physics 39,
9 A(
2000)
5124-5127
Smith L, Lee S, Smith L, Jackson H
Exciton kinetics in self-assembled CdSe/ZnSe quantum dots
Journal of Environmental Chemical Engineering (2000) 87-
Smith L, Lee S
Using exciton dynamics to probe the internal structure of CdSe/ZnSe self-assembled quantum dots
Physica Status Solidi. B: Basic Research 221, 1(2000) 55-58
Smith L, Lee S
Phonons and exciton recombination in CdSe/ZnSe self-assembled quantum dots
Applied Physics Letters 77, 12(2000) 1813-1815
Karouta F, Silov A, Smalbrugge E
Dynamic scaling of plasma etched InP surface
Journal of Environmental Chemical Engineering (2000) 201-204
Karouta F
Highly chemical reactive ion etching of gallium nitride
Materials Research Society Symposium Proceedings 595(2000) W11761-W11766
Fletcher N
A history of musical acoustics research in Australia
Acoustics Australia 28, 3(2000) 97-101
Fletcher N
The physiological demands of wind instrument performance
Acoustics Australia 28, 2(2000) 53-56
Dou H,
Tan H,
Fu L,
Jagadish CPerformance comparison of GaAs/AlGaAs quantum well infrared photodetectors grown by MOCVD and MBEJournal of Environmental Chemical Engineering 21,
5(
2000)
441-444
Dou H,
Fu L,
Jagadish C,
Tan HInfluence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetectorJournal of Environmental Chemical Engineering 19,
1(
2000)
25-28
Ridgway M, Glover C, Foran G, Clerc C, Hansen J, Nylandsted-Larsen A
Ion-Dose-Dependent Microstructure in Amorphous Ge
Physical Review B: Condensed Matter and Materials 61(2000) 12 586-12 589
Bradby J,
Williams J,
Wong-Leung J,
Swain M,
Munroe PTransmission Electron Microscopy Observation of Deformation Microstructure under Spherical Indentation in SiliconApplied Physics Letters 77(
2000)
3749-3751
Deenapanray P,
Tan H,
Jagadish C,
Auret FInvestigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour depositionApplied Physics Letters 77(
2000)
696-698
Deenapanray P,
Tan H,
Jagadish C,
Auret FElectronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial LayersJournal of Applied Physics 88(
2000)
5255-5261
Deenapanray P,
Tan H,
Cohen M,
Gaff K,
Gaff K,
Petravic M,
Jagadish CSilane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wellsJournal of the Electrochemical Society 147(
2000)
1950-1956
Deenapanray P,
Tan H,
Jagadish CInfluence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum WellsMaterials Research Society Symposium Proceedings 607(
2000)
491-502
Deenapanray P, Petravic M
Segregation Effects of Li, K and F in Si During Depth Profiling by Oxygen Ions
Journal of Applied Physics 87(2000) 2178-2184
Fu L,
Deenapanray P,
Tan H,
Jagadish C,
Dao L,
Gal MQuality of Silica Capping Layer and its Influence on Quantum-Well IntermixingApplied Physics Letters 76(
2000)
837-839
de Souza J, Suprun-Belevich Y, Boudinov H, Cima C
Damage Accumulation in Si Crystal During Ion Implantation at Elevated Temperatures: Evidence of Chemical Effects
Journal of Applied Physics 87(2000) 8385-8388
Dao L,
Gal M,
Li G,
Jagadish CPhotoluminescence in delta-doped InGaAs/GaAs single quantum wellsJournal of Applied Physics 87(
2000)
3896-3899
Dao L,
Gal M,
Carmody C,
Tan H,
Jagadish CA comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wellsJournal of Applied Physics 88(
2000)
5252-5254
Cima C, Boudinov H, de Souza J, Suprun-Belevich Y, Fichtner P
Strain Development and Damage Accumulation During Neon Ion Implantation into Silicon at Elevated Temperatures
Journal of Applied Physics 88(2000) 1771-1775
Choi S,
Elliman R,
Cheylan S,
Martin JIntrinsic Defect-Related Blue-Violet and Ultraviolet Photoluminescence from Si+-Implanted Fused SilicaApplied Physics Letters 76(
2000)
2062-2064
Chen Y,
Chadderton L,
Williams J,
Fitzgerald JSolid-State Formation of Carbon and Boron Nitride NanotubesMaterials Science Forum 343-346(
2000)
63-67
Fletcher N, Welham N, Welham N
Enhanced Dissolution Following Extended Milling
AIChE Journal 46(2000) 666-669
Fu Y,
Willander M,
Lu W,
Liu Q,
Shen S,
Jagadish C,
Gal M,
Zou J,
Cockayne DStrain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wirePhysical Review B 61(
2000)
8306-8311
Petravic M, Hoffman A, Comtet G, Hellner L, Dujardin G
Photon-stimulated desorption of hydrogen ions from semiconductor surfaces: evidence for direct and indirect processes
Fizika A 8(2000) 275-284
Kucheyev S,
Williams J,
Zou J,
Jagadish C,
Li GIon beam induced dissociation and bubble formation in GaNApplied Physics Letters 77(
2000)
3577-3579
Petravic M, Deenapanray P, Comtet G, Hellner L, Dujardin G, Usher B
Selective photon-stimulated desorption of hydrogen from GaAs surfaces
Physical Review Letters 84(2000) 2255-2258
Moyses Araujo C, Souza de Almeida J, Pepe I, Ferreira da Silva A, Sernelius B, de Souza J, Boudinov H
Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi
Physical Review B 62(2000) 12 882-12 887
Moon D, Won J, Kim K, Kim H, Kang H, Petravic M
GaAs delta-doped layers in Si for evaluation of SIMS depth resolution
Surface and Interface Analysis 29(2000) 362-268
Marcinkevicius S,
Jagadish C,
Tan H,
Kaminska M,
Korona K,
Adomavicius R,
Krotkus AInfluence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layersApplied Physics Letters 76(
2000)
1306-1308
Liu Q,
Lu W,
Chen X,
Shen S,
Tan H,
Yuan S,
Jagadish C,
Johnston M,
Dao L,
Gal M,
Zou J,
Cockayne DWavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealingJournal of Applied Physics 87(
2000)
1566-1568
Liu Q,
Li N,
Lu W,
Li N,
Yuan X,
Shen S,
Fu L,
Tan H,
Jagadish CWavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixingJapanese Journal of Applied Physics 39(
2000)
1687-1689
Liu Q,
Li N,
Li Z,
Lu W,
Shen S,
Fu Y,
Willander M,
Tan H,
Jagadish C,
Zou JInvestigation of AlGaAs/GaAs V-grooved Quantum Wire InfraredJapanese Journal of Applied Physics 39(
2000)
5124-5127
Kucheyev S,
Williams J,
Jagadish C,
Zou J,
Li GPolycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion BombardmentJournal of Applied Physics 88(
2000)
5493-5495
Kucheyev S,
Williams J,
Jagadish C,
Li G,
Pearton SStrong Surface Disorder and Loss of N Produced by Ion Bombardment of GaNApplied Physics Letters 76(
2000)
3899-3901
Kucheyev S,
Bradby J,
Williams J,
Jagadish C,
Toth M,
Phillips M,
Swain MNanoindentation of Epitaxial GaN FilmsApplied Physics Letters 77(
2000)
3373-3375
Kuball M,
Hayes J,
Suski T,
Jun J,
Leszczynski M,
Domagala J,
Tan H,
Williams J,
Jagadish CHigh-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scatteringJournal of Applied Physics 87(
2000)
2736-2741
Knights A, Ruffell S, Simpson P
Comparison of the Annealing Characteristics of Resistivity and Vacancy Defects for Implant Isolated n-type GaAs
Journal of Applied Physics 87, 2(2000) 663-
Hegeler F,
Manasreh M,
Morath C,
Ballet P,
Yang H,
Salamo G,
Tan H,
Jagadish CThermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wellsApplied Physics Letters 77(
2000)
2867-2869
Gingrich H,
Morath C,
Manasreh M,
Ballet P,
Smathers J,
Salamo G,
Jagadish CThermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/A10.3Ga0.7As Multiple Quantum WellsMaterials Research Society Symposium Proceedings 607(
2000)
217-222
Williams J,
Jagadish CThe use of micro-raman spectroscopy to monitor high-pressure hightemperature annealing of ion-implanted GaN filmsMaterials Research Society Symposium Proceedings 595(
2000)
W11461-W11466
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