EME publications 2000

2000

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Journal article

Wong-Leung J, Fatima S, Jagadish AC C, Fitzgerald J, Chou C, Zou J, Cockayne D
Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon
Journal of Applied Physics 88(2000) 1312-1318

Wong-Leung J, Fatima S, Jagadish AC C, Fitzgerald J
Effect of implant temperature on extended defects created by ion implantation in silicon
Defects and Diffusion Forum Part A: Defect and Diffusion Forum 183, 1(2000) 163-169

Williams J, Zhu X, Ridgway M, Conway M, Williams B, Fortuna F, Ruault M, Bernas H
Preferential Amorphization and Defect Annihilation at Nanocavities in Silicon Durion Ion Irradiation
Applied Physics Letters 77(2000) 4280-4282

Williams J, Young I, Conway M
Ion Beam Induced Epitaxy Experiments in Silicon under Channeling and Random Alignments
Nuclear Instruments and Methods in Physics Research: Section B 161-163(2000) 505-509

Yu K, Ridgway M
Zinc and Group V Element Co-Implantation in Indium Phosphide
Nuclear Instruments and Methods in Physics Research: Section B 168(2000) 65-71

Yu K, Walukiewicz W, Shan W, Wu J, Ager J, Haller E, Garza J, Ridgway M
Nitrogen-induced enhancement of the free electron concentration in Sulfur implanted GaNxAs1-x
Applied Physics Letters 77(2000) 2858-2860

Fu L, Tan H, Jagadish AC C
Application of high energy implantation in tuning the detection wavelength of quantum well infrared photodetectors
Journal of Environmental Chemical Engineering 1(2000) 88-89

Karouta F
Highly chemical reactive ion etching of gallium nitride
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1(2000)

Zhao Q, Willander M, Lu W, Liu Q, Shen S, Tan H, Jagadish AC C, Zou J, Cockayne D
Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
Journal of Applied Physics 88(2000) 2519-2522

Whitlow H, Zhang Y, Timmers H, Timmers H, Ophel T, Elliman R, Li M, O'Connor D
Correlation of Energy-loss and collected-charge in Si DE detectors: measurements using an Enge spectrometer
Nuclear Instruments and Methods in Physics Research: Section B 164-165(2000) 186-190

Welham N, Welham N, Willis P, Kerr T
Mechanochemical Formation of Metal-Ceramic Composites
Journal of the American Chemical Society 83(2000) 33-40

Titov A, Kucheyev S
Ion Beam Induced Amorphous-Crystalline Phase Transition in Si: Quantitative Approach
Nuclear Instruments and Methods in Physics Research: Section B 168(2000) 375-388

Timmers H, Timmers H, Ophel T, Elliman R
Simplifying position-sensitive gas-ionization detectors for heavy ion elastic recoil detection
Nuclear Instruments and Methods in Physics Research: Section B 161-163(2000) 19-28

Timmers H, Timmers H, Ophel T, Elliman R
New design features of gas ionization detectors used for elastic recoil detection
Nuclear Instruments and Methods in Physics Research: Section A 447(2000) 536-543

Tarnopolsky A, Fletcher N, Lai J
Oscillating Reed Valves - An Experimental Study
Journal of the Acoustical Society of America 108(2000) 400-406

Toth M, Kucheyev S, Williams J, Jagadish AC C, Phillips M, Li G
Imaging Charge Trap Distributions in GaN Using Environmental Scanning Electron Micrsocopy
Applied Physics Letters 77(2000) 1342-1344

Walker S, Davies J, Mascher P, Wallace S, Lennard W, Massoumi G, Elliman R, Ophel T, Timmers H, Timmers H
Characterization of Silicon Oxynitride Films using Ion Beam Analysis Techniques
Nuclear Instruments and Methods in Physics Research: Section B 170(2000) 461-466

Welham N, Welham N, Walmsley L
Solubilization of Zircon by Mechanically Induced Solid-State Cation Exchange with Alkaline Earth Oxides
Transactions of the Institution of Mining and Metallurgy Section C: Mineral Processing and Extractive Metallurgy 109(2000) C57-C60

Welham N, Welham N, Chapman P
Mechanical Activation of Coal
Fuel Processing Technology 68(2000) 75-82

Welham N, Welham N
Novel Route to Submicrometer Tungsten Carbide
AIChE Journal 46(2000) 68-71

Tan H, Williams J, Jagadish AC C
The use of micro-raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1(2000)

Deenapanray P, Tan H, Gaff K, Petravic M, Jagadish AC C
Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147, 5(2000) 1950-1956

Smith L, Lee S, Smith L, Jackson H
Exciton kinetics in self-assembled CdSe/ZnSe quantum dots
Journal of Environmental Chemical Engineering (2000) 87-

Smith L, Lee S
Using exciton dynamics to probe the internal structure of CdSe/ZnSe self-assembled quantum dots
Physica Status Solidi. B: Basic Research 221, 1(2000) 55-58

Smith L, Lee S
Phonons and exciton recombination in CdSe/ZnSe self-assembled quantum dots
Applied Physics Letters 77, 12(2000) 1813-1815

Rodriguez M
Measurement of the SMC muon beam polarization using the asymmetry in the elastic scattering off polarized electrons
Nuclear Instruments and Methods in Physics Research: Section A 443, 1(2000) 1-19

Tan H, Jagadish AC C
Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures
Japanese Journal of Applied Physics 39, 9 A(2000) 5124-5127

Tan H, Jagadish AC C
The micro-photoluminescence of a single V-groove GaAs/AlGaAs quantum wire
Wuli Xuebao/Acta Physica Sinica 49, 9(2000) 1812-1813

Williams J, Jagadish AC C
The use of micro-raman spectroscopy to monitor high-pressure hightemperature annealing of ion-implanted GaN films
Materials Research Society Symposium Proceedings 595(2000) W11461-W11466

Williams J, Jagadish AC C
Ion-beam-induced dissociation and bubble formation in GaN
Applied Physics Letters 77, 22(2000) 3577-3579

Wang R, Zhang H, Zhang H
Raman spectral study of silicon nanowires: High-order scattering and phonon confinement effects
Physical Review B 61, 24(2000) 16827-16832

Lobo C
Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots
Physical Review B 62, 4(2000) 2737-2742

Kluth P
Growth of patterned thin epitaxial CoSi2-films by a titanium oxide mediated epitaxy process
Thin Solid Films 380, 1-2(2000) 201-203

Fletcher N
The physiological demands of wind instrument performance
Acoustics Australia 28, 2(2000) 53-56

Fletcher N
A class of chaotic bird calls?
Journal of the Acoustical Society of America 108, 2(2000) 821-826

Dou H, Tan H, Fu L, Jagadish AC C
Performance comparison of GaAs/AlGaAs quantum well infrared photodetectors grown by MOCVD and MBE
Journal of Environmental Chemical Engineering 21, 5(2000) 441-444

Dou H, Fu L, Jagadish AC C, Tan H
Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector
Journal of Environmental Chemical Engineering 19, 1(2000) 25-28

Fletcher N
A history of musical acoustics research in Australia
Acoustics Australia 28, 3(2000) 97-101

Karouta F
Polarization stabilization in vertical-cavity surface-emitting lasers through asymmetric current injection
IEEE Photonics Technology Letters 12, 8(2000) 945-947

Kluth P
Properties of ion implanted epitaxial CoSi2/Si(1 0 0) after rapid thermal oxidation
Nuclear Instruments and Methods in Physics Research: Section B 164(2000) 1004-1009

Karouta F, Silov A, Smalbrugge E
Dynamic scaling of plasma etched InP surface
Journal of Environmental Chemical Engineering (2000) 201-204

Karouta F
Highly chemical reactive ion etching of gallium nitride
Materials Research Society Symposium Proceedings 595(2000) W11761-W11766

Schmidt D, Svensson B, Seibt M, Jagadish AC C, Davies G
Photoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Micrsocopy Measurements on MeV Self-Ion Implanted and Annealed n-type Silicon
Journal of Applied Physics 88(2000) 2309-2317

Ridgway M, Glover C, Foran G, Clerc C, Hansen J, Nylandsted-Larsen A
Ion-Dose-Dependent Microstructure in Amorphous Ge
Physical Review B: Condensed Matter and Materials 61(2000) 12 586-12 589

Deenapanray P, Tan H, Fu L, Jagadish AC C
Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
Electrochemical and Solid-State Letters 3(2000) 196-199

Deenapanray P, Tan H, Cohen M, Gaff K, Gaff K, Petravic M, Jagadish AC C
Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147(2000) 1950-1956

Deenapanray P, Tan H, Jagadish AC C
Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells
Materials Research Society Symposium Proceedings 607(2000) 491-502

Deenapanray P, Fu L, Petravic M, Jagadish AC C, Gong B, Lamb R
Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells
Surface and Interface Analysis 29(2000) 754-760

Deenapanray P, Tan H, Jagadish AC C, Auret F
Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers
Journal of Applied Physics 88(2000) 5255-5261

Deenapanray P, Tan H, Jagadish AC C, Auret F
Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition
Applied Physics Letters 77(2000) 696-698

Fu L, Deenapanray P, Tan H, Jagadish AC C, Dao L, Gal M
Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing
Applied Physics Letters 76(2000) 837-839

Fletcher N, Welham N, Welham N
Enhanced Dissolution Following Extended Milling
AIChE Journal 46(2000) 666-669

Elliman R, Timmers H, Timmers H, Ophel T, Dall T, Dall T, Wielunski L, Harding G
Simultaneous Hydrogen Detection with an ERD Gas Ionization Detector
Nuclear Instruments and Methods in Physics Research: Section B 161-163(2000) 231-234

Deenapanray P, Petravic M
On the Segregation of Ca at SiO2/Si Interface During Oxygen Ion Bombardment
Surface and Interface Analysis 29(2000) 160-167

Deenapanray P, Petravic M
Segregation Effects of Li, K and F in Si During Depth Profiling by Oxygen Ions
Journal of Applied Physics 87(2000) 2178-2184

Choi S, Elliman R, Cheylan S, Martin J
Intrinsic Defect-Related Blue-Violet and Ultraviolet Photoluminescence from Si+-Implanted Fused Silica
Applied Physics Letters 76(2000) 2062-2064

Cheylan S, Langford N, Elliman R
The Effect of Ion-Irradiation and Annealing on the Luminescence of Si Nanocrystals in SiO2
Nuclear Instruments and Methods in Physics Research: Section B 166-167(2000) 851-856

Chen Y, Chadderton L, Williams J, Fitzgerald J
Solid-State Formation of Carbon and Boron Nitride Nanotubes
Materials Science Forum 343-346(2000) 63-67

Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Transmission Electron Microscopy Observation of Deformation Microstructure under Spherical Indentation in Silicon
Applied Physics Letters 77(2000) 3749-3751

Cima C, Boudinov H, de Souza J, Suprun-Belevich Y, Fichtner P
Strain Development and Damage Accumulation During Neon Ion Implantation into Silicon at Elevated Temperatures
Journal of Applied Physics 88(2000) 1771-1775

Dall T, Dall T, Gaff K, Timmers H, Timmers H, Ophel T, Elliman R
Heavy-ion elastic-recoil detection ananlysis of doped-silica films for integrated photonics
Nuclear Instruments and Methods in Physics Research: Section B 161(2000) 624-628

de Souza J, Suprun-Belevich Y, Boudinov H, Cima C
Damage Accumulation in Si Crystal During Ion Implantation at Elevated Temperatures: Evidence of Chemical Effects
Journal of Applied Physics 87(2000) 8385-8388

Dao L, Gal M, Li G, Jagadish AC C
Photoluminescence in delta-doped InGaAs/GaAs single quantum wells
Journal of Applied Physics 87(2000) 3896-3899

Dao L, Gal M, Carmody C, Tan H, Jagadish AC C
A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells
Journal of Applied Physics 88(2000) 5252-5254

Fu Y, Willander M, Lu W, Liu Q, Shen S, Jagadish AC C, Gal M, Zou J, Cockayne D
Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
Physical Review B 61(2000) 8306-8311

Gaff K, Gaff K, Mariman E, Dall T, Dall T, Love J, Boswell R
Strong photosensitivity in tin-doped silica films
Electronics Letters 36, 9(2000) 842-843

Liu Q, Lu W, Chen X, Shen S, Tan H, Yuan S, Jagadish AC C, Johnston M, Dao L, Gal M, Zou J, Cockayne D
Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
Journal of Applied Physics 87(2000) 1566-1568

Liu Q, Li Z, Chen X, Lu W, Shen S, Tan H, Yuan S, Jagadish AC C
Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures
Physics Letters A 271(2000) 213-216

Liu Q, Li N, Lu W, Li N, Yuan X, Shen S, Fu L, Tan H, Jagadish AC C
Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing
Japanese Journal of Applied Physics 39(2000) 1687-1689

Liu Q, Li N, Li Z, Lu W, Shen S, Fu Y, Willander M, Tan H, Jagadish AC C, Zou J
Investigation of AlGaAs/GaAs V-grooved Quantum Wire Infrared
Japanese Journal of Applied Physics 39(2000) 5124-5127

Marcinkevicius S, Jagadish AC C, Tan H, Kaminska M, Korona K, Adomavicius R, Krotkus A
Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers
Applied Physics Letters 76(2000) 1306-1308

Moon D, Won J, Kim K, Kim H, Kang H, Petravic M
GaAs delta-doped layers in Si for evaluation of SIMS depth resolution
Surface and Interface Analysis 29(2000) 362-268

Petravic M, Hoffman A, Comtet G, Hellner L, Dujardin G
Photon-stimulated desorption of hydrogen ions from semiconductor surfaces: evidence for direct and indirect processes
Fizika A 8(2000) 275-284

Petravic M, Deenapanray P, Comtet G, Hellner L, Dujardin G, Usher B
Selective photon-stimulated desorption of hydrogen from GaAs surfaces
Physical Review Letters 84(2000) 2255-2258

Moyses Araujo C, Souza de Almeida J, Pepe I, Ferreira da Silva A, Sernelius B, de Souza J, Boudinov H
Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi
Physical Review B 62(2000) 12 882-12 887

Kucheyev S, Williams J, Zou J, Jagadish AC C, Li G
Ion beam induced dissociation and bubble formation in GaN
Applied Physics Letters 77(2000) 3577-3579

Kucheyev S, Williams J, Jagadish AC C, Zou J, Li G
Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment
Journal of Applied Physics 88(2000) 5493-5495

Knights A, Ruffell S, Simpson P
Comparison of the Annealing Characteristics of Resistivity and Vacancy Defects for Implant Isolated n-type GaAs
Journal of Applied Physics 87, 2(2000) 663-

Hegeler F, Manasreh M, Morath C, Ballet P, Yang H, Salamo G, Tan H, Jagadish AC C
Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells
Applied Physics Letters 77(2000) 2867-2869

Gingrich H, Morath C, Manasreh M, Ballet P, Smathers J, Salamo G, Jagadish AC C
Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/A10.3Ga0.7As Multiple Quantum Wells
Materials Research Society Symposium Proceedings 607(2000) 217-222

Kuball M, Hayes J, Suski T, Jun J, Leszczynski M, Domagala J, Tan H, Williams J, Jagadish AC C
High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering
Journal of Applied Physics 87(2000) 2736-2741

Kucheyev S, Bradby J, Williams J, Jagadish AC C, Toth M, Phillips M, Swain M
Nanoindentation of Epitaxial GaN Films
Applied Physics Letters 77(2000) 3373-3375

Kucheyev S, Williams J, Jagadish AC C, Zou J, Li G
Damage Buildup in GaN under Ion Bombardment
Physical Review B 62(2000) 7510-7522

Kucheyev S, Williams J, Jagadish AC C, Zou J, Craig V, Li G
Ion-Beam-Induced Porosity of GaN
Applied Physics Letters 77(2000) 1455-1457

Kucheyev S, Williams J, Jagadish AC C, Li G, Pearton S
Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN
Applied Physics Letters 76(2000) 3899-3901

Babinski M, Siwiec-Matuszyk J, Baranowski J, Li G, Jagadish AC C
Transport and quantum electron mobility in the modulation Si d-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy
Applied Physics Letters 77(2000) 999-1001

(86 publications)

Conference paper

Toth M, Phillips M, Kucheyev S, Williams J, Jagadish AC C, Li G
Charge Contrast in SE Images Obtained Using the ESEM
Institute of Physics Conference No 165 (2000) ?, ?(2000) 275-276

Petravic M, Deenapanray P, Demangel C, Moon D
On the Angular Dependence of Profile Broadening in Silicon Under Oxygen and Nitrogen Bombardment
Secondary Ion Mass Spectrometry (SIMS 1999) ?, ?(2000) 545-548

(2 publications)

Journal short contribution (non refereed)

Araujo L
Al and Ag diffusion study in alpha-titanium
Applied Physics A: Materials Science and Processing 71, 2(2000) 169-174

(1 publications)

Journal article (non-refereed)

Glover C, Ridgway M, Byrne A, Byrne A, Yu K, Foran G, Clerc C, Hansen J, Nylandsted-Larsen A
Micro- and macrostructure of implantation-induced disorder in Ge
Nuclear Instruments and Methods in Physics Research: Section B 161-163(2000) 1033-1037

(1 publications)

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