Dr Sanjoy Nandi

Position	Research Fellow
Department	Electronic Materials Engineering
Research group	Electronic materials group
Office phone	(02) 612 59089
Email
Office	Cockcroft 4 41

Publications

Journal article

Nath S, Das S, Nandi S, Xi C, Marquez C, Rua A, Uenuma M, Wang Z, Zhang S, Zhu R, Eshraghian J, Sun X, Lu T, Bian Y, Syed N, Pan W, Wang H, Lei W, Fu L, Faraone L, Lei W, Liu Y, Elliman R
Optically Tunable Electrical Oscillations in Oxide-Based Memristors for Neuromorphic Computing
Advanced Materials (2024)

Li X, Wang X, Li P, Iu H, Eshraghian J, Nandi S, Nath S, Elliman R
Tri-State Memristors Based on Composable Discrete Devices
International Journal of Bifurcation and Chaos 33, 7(2023)

Nandi S, Nath S, Das S, Murdoch B, Ratcliff T, McCulloch D, Elliman R
Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb2O5/Pt Memristors
ACS Applied Materials and Interfaces 15, 50(2023) 58613 - 58622

Nath S, Nandi S, Das S, Liang Y, Elliman R
Thermal transport in metal-NbOx-metal cross-point devices and its effect on threshold switching characteristics
Nanoscale 15, 16(2023)

Nath S, Sun X, Nandi S, Chen X, Wang Z, Das S, Lei W, Faraone L, Rickard W, Elliman R
Harnessing Metal/Oxide Interlayer to Engineer the Memristive Response and Oscillation Dynamics of Two-Terminal Memristors
Advanced Functional Materials 33, 52(2023) 2306428

Das S, Nandi S, Marquez C, Rua A, Uenuma M, Puyoo E, Nath S, Albertini D, Baboux N, Lu T, Liu Y, Haeger T, Riedl T, Ratcliff T, Elliman R
Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid-State Oscillator
Advanced Materials 35, 8(2022) 2208477

Liang Y, Zhu Q, Wang G, Nath S, Ho-Ching Iu H, Nandi S, Elliman R
Universal Dynamics Analysis of Locally-Active Memristors and Its Applications
IEEE Transactions on Circuits and Systems Part I: Regular Papers 69, 3(2022) 1278 - 1290

Nandi S, Das S, Cui Y, El Helou A, Nath S, Ratcliff T, Raad P, Elliman R
Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching
ACS Applied Materials and Interfaces 14, 18(2022) 21270 - 21277

Nandi S, Puyoo E, Nath S, Albertini D, Baboux N, Das S, Ratcliff T, Elliman R
High Spatial Resolution Thermal Mapping of Volatile Switching in NbOx-Based Memristor Using In Situ Scanning Thermal Microscopy
ACS Applied Materials and Interfaces 14, 25(2022) 29025-29031

Wang X, Dong C, Zhou P, Nandi S, Nath S, Elliman R, Ho-Ching Iu H, Mo Kang S, Eshraghian J
Low-Variance Memristor-Based Multi-Level Ternary Combinational Logic
IEEE Transactions on Circuits and Systems Part I: Regular Papers 69, 6(2022)

Liu X, Zhang P, Nath S, Li S, Nandi S, Elliman R
Understanding composite negative differential resistance in niobium oxide memristors
Journal of Physics D: Applied Physics 55, 10(2021) 1-12

Nath S, Nandi S, Ratcliff T, Elliman R
Engineering the Threshold Switching Response of Nb2O5?Based Memristors by Ti Doping
ACS Applied Materials and Interfaces 13, 2(2021) 2845-2852

Nandi S, Das S, Estherby C, Gentle A, Elliman R
Understanding modes of negative differential resistance in amorphous and polycrystalline vanadium oxides
Journal of Applied Physics 128, 24(2020) 1-7

Nandi S, Nath S, El-Helou A, Li S, Ratcliff T, Uenuma M, Raad P, Elliman R
Electric Field- And Current-Induced Electroforming Modes in NbOx
ACS Applied Materials and Interfaces 12, 7(2020) 8422-8428

Nath S, Nandi S, El-Helou A, Liu X, Li S, Ratcliff T, Raad P, Elliman R
Schottky-Barrier-Induced Asymmetry in the Negative-Differential-Resistance Response of Nb/NbOx/Pt Cross-Point Devices
Physical Review Applied 13, 6(2020) 1-10

Nath S, Nandi S, Li S, Elliman R
Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO x
Nanotechnology 31, 23(2020) 1-6

Li S, Liu X, Nandi S, Nath S, Elliman R
Origin of Current-Controlled Negative Differential Resistance Modes and the Emergence of Composite Characteristics with High Complexity
Advanced Functional Materials 29, 44(2019)

Nandi S, Nath S, El Helou A, Li S, Liu X, Raad P, Elliman R
Current localisation and redistribution as the basis of discontinuous current controlled negative differential resistance in NbOx
Advanced Functional Materials 29, 50(2019) 1-8

Nandi S, Nath S, El-Helou A, Li S, Liu X, Raad P, Elliman R
Current Localization and Redistribution as the Basis of Discontinuous Current Controlled Negative Differential Resistance in NbOx
Advanced Functional Materials 29, 50(2019) 1-8

Nath S, Nandi S, Li S, Elliman R
Detection and spatial mapping of conductive filaments in metal/oxide/metal cross-point devices using a thin photoresist layer
Applied Physics Letters 114, 6(2019)

Wei L, Li S, Nandi S, Elliman R
Forming-free bipolar resistive switching and quantum conductance in NiO/FTO structures
Journal of Physics D: Applied Physics 52, 46(2019) 1-5

Li S, Liu X, Nandi S, Elliman R
Anatomy of filamentary threshold switching in amorphous niobium oxide
Nanotechnology 29, 37(2018) 9

Nandi S, Venkatachalam D, Ruffell S, England J, Grande P, Vos M, Elliman R
Room temperature synthesis of HfO2/HfO x heterostructures by ion-implantation
Nanotechnology 29, 42(2018) 9

Li S, Liu X, Nandi S, Venkatachalam D, Elliman R
Coupling dynamics of Nb/Nb 2 O 5 relaxation oscillators
Nanotechnology 28, 12(2017) 125201-125201

Marmitt G, Nandi S, Venkatachalam D, Elliman R, Vos M, Grande P
Oxygen diffusion in TiO₂ films studied by electron and ion Rutherford backscattering
Thin Solid Films 629(2017) 97-102

Nandi S, Li S, Liu X, Elliman R
Temperature dependent frequency tuning of NbOx relaxation oscillators
Applied Physics Letters 111, 20(2017) 1-4

Liu X, Li S, Nandi S, Venkatachalam D, Elliman R
Threshold switching and electrical self-oscillation in niobium oxide films
Journal of Applied Physics 120, 12(2016)

Li S, Liu X, Nandi S, Venkatachalam D, Elliman R
High-endurance megahertz electrical self-oscillation in Ti/NbO_x bilayer structures
Applied Physics Letters 106, 21(2015) 1-4

Marmitt G, Nandi S, Rosa L, Vos M
Analysis of multi-layer ERBS spectra
Journal of Electron Spectroscopy and Related Phenomena 202(2015) 26-32

Nandi S, Liu X, Venkatachalam D, Elliman R
Threshold current reduction for the metal-insulator transition in NbO2-x-selector devices: The effect of ReRAM integration
Journal of Physics D: Applied Physics 48, 19(2015) 1-8

Nandi S, Liu X, Venkatachalam D, Elliman R
Self-assembly of an NbO2 interlayer and configurable resistive switching in Pt/Nb/HfO2/Pt structures
Applied Physics Letters 107, 13(2015)

Nandi S, Liu X, Venkatachalam D, Elliman R
Effect of Electrode Roughness on Electroforming in HfO2 and Defect-Induced Moderation of Electric-Field Enhancement
Physical Review Applied 4, 6(2015) 1-11

Liu X, Nandi S, Venkatachalam D, Belay K, Song S, Elliman R
Reduced threshold current in NbO₂ selector by engineering device structure
IEEE Electron Device Letters 35, 10(2014) 1055-1057

Nandi S, Llewellyn D, Belay K, Venkatachalam D, Liu X, Elliman R
Effect of Microstructure on Dielectric Breakdown in Amorphous HfO2 Films
Microscopy and Microanalysis 20, 3(2014)

Nandi S, Nath S, Hossain A, Khan J
Effect of Zn Doping on Structural and Magnetic Properties of Ba4Ni2-xZnxFe36O60 Hexaferrites
Journal of Superconductivity and Novel Magnetism 27, 12(2014) 2655-2662

Vos M, Grande P, Venkatachalam D, Nandi S, Elliman R
Oxygen Self-Diffusion in HfO₂ Studied by Electron Spectroscopy
Physical Review Letters 112, 17(2014) 1-5

Vos M, Liu X, Grande P, Nandi S, Venkatachalam D, Elliman R
The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbO_x films
Nuclear Instruments and Methods in Physics Research: Section B 340(2014) 58-62

Grande P, Vos M, Venkatachalam D, Nandi S, Elliman R
Determination of thickness and composition of high-k dielectrics using high-energy electrons
Applied Physics Letters 103, 7(2013) 071911/1-4

Nandi S, Hoque M, Ghosh H, Chowdhury R
Assessment of Wind and Solar Energy Resources in Bangladesh
Arabian Journal for Science and Engineering 38, 11(2013) 3113-3123

Vos M, Grande P, Nandi S, Venkatachalam D, Elliman R
A high-energy electron scattering study of the electronic structure and elemental composition of O-implanted Ta films used for the fabrication of memristor devices
Journal of Applied Physics 114, 7(2013) 073508/ 1-7

Nandi S, Ghosh H
Prospect of wind-PV-battery hybrid power system as an alternative to grid extension in Bangladesh
Energy 35, 7(2010) 3040-3047

Nandi S, Ranjan Ghosh H
A wind-PV-battery hybrid power system at Sitakunda in Bangladesh
Energy Policy 37, 9(2009) 3659-3664

(42 publications)

Conference paper

Li S, Liu X, Nandi S, Venkatachalam D, Elliman R
Temperature Dependence of Threshold Switching in NbOx Thin Films
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?(2014) 138-140

Liu X, Nandi S, Venkatachalam D, Li S, Belay K, Elliman R
Finite Element Modeling of Resistive Switching in Nb₂O₅-based Memory Device
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?(2014) 280-283

Nandi S, Liu X, Li S, Venkatachalam D, Belay K, Elliman R
Resistive Switching Behavior in HfO₂ with Nb as an Oxygen Exchange Layer
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?(2014) 290-294

(3 publications)