Dr Sanjoy Nandi

Nandi, Sanjoy profile
Position Research Fellow
Department Electronic Materials Engineering
Research group Electronic materials group
Office phone (02) 612 59089
Email
Office Cockcroft 4 41

Publications

Journal article

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Optically Tunable Electrical Oscillations in Oxide-Based Memristors for Neuromorphic Computing
Advanced Materials ()
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Tri-State Memristors Based on Composable Discrete Devices
International Journal of Bifurcation and Chaos 33, 7()
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Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb2O5/Pt Memristors
ACS Applied Materials and Interfaces 15, 50() 58613 - 58622
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Harnessing Metal/Oxide Interlayer to Engineer the Memristive Response and Oscillation Dynamics of Two-Terminal Memristors
Advanced Functional Materials 33, 52() 2306428
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Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid-State Oscillator
Advanced Materials 35, 8() 2208477
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Universal Dynamics Analysis of Locally-Active Memristors and Its Applications
IEEE Transactions on Circuits and Systems Part I: Regular Papers 69, 3() 1278 - 1290
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Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching
ACS Applied Materials and Interfaces 14, 18() 21270 - 21277
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High Spatial Resolution Thermal Mapping of Volatile Switching in NbOx-Based Memristor Using In Situ Scanning Thermal Microscopy
ACS Applied Materials and Interfaces 14, 25() 29025-29031
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Low-Variance Memristor-Based Multi-Level Ternary Combinational Logic
IEEE Transactions on Circuits and Systems Part I: Regular Papers 69, 6()
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Understanding composite negative differential resistance in niobium oxide memristors
Journal of Physics D: Applied Physics 55, 10() 1-12
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Electric Field- And Current-Induced Electroforming Modes in NbOx
ACS Applied Materials and Interfaces 12, 7() 8422-8428
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Forming-free bipolar resistive switching and quantum conductance in NiO/FTO structures
Journal of Physics D: Applied Physics 52, 46() 1-5
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Room temperature synthesis of HfO2/HfO x heterostructures by ion-implantation
Nanotechnology 29, 42() 9
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Coupling dynamics of Nb/Nb 2 O 5 relaxation oscillators
Nanotechnology 28, 12() 125201-125201
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Oxygen diffusion in TiO2 films studied by electron and ion Rutherford backscattering
Thin Solid Films 629() 97-102
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Temperature dependent frequency tuning of NbOx relaxation oscillators
Applied Physics Letters 111, 20() 1-4
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Threshold switching and electrical self-oscillation in niobium oxide films
Journal of Applied Physics 120, 12()
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High-endurance megahertz electrical self-oscillation in Ti/NbOx bilayer structures
Applied Physics Letters 106, 21() 1-4
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Analysis of multi-layer ERBS spectra
Journal of Electron Spectroscopy and Related Phenomena 202() 26-32
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Reduced threshold current in NbO2 selector by engineering device structure
IEEE Electron Device Letters 35, 10() 1055-1057
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Effect of Microstructure on Dielectric Breakdown in Amorphous HfO2 Films
Microscopy and Microanalysis 20, 3()
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Effect of Zn Doping on Structural and Magnetic Properties of Ba4Ni2-xZnxFe36O60 Hexaferrites
Journal of Superconductivity and Novel Magnetism 27, 12() 2655-2662
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Oxygen Self-Diffusion in HfO2 Studied by Electron Spectroscopy
Physical Review Letters 112, 17() 1-5
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The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbOx films
Nuclear Instruments and Methods in Physics Research: Section B 340() 58-62
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Determination of thickness and composition of high-k dielectrics using high-energy electrons
Applied Physics Letters 103, 7() 071911/1-4
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Assessment of Wind and Solar Energy Resources in Bangladesh
Arabian Journal for Science and Engineering 38, 11() 3113-3123
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A wind-PV-battery hybrid power system at Sitakunda in Bangladesh
Energy Policy 37, 9() 3659-3664

(42 publications)

Conference paper

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Temperature Dependence of Threshold Switching in NbOx Thin Films
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 138-140
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Finite Element Modeling of Resistive Switching in Nb2O5-based Memory Device
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 280-283
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Resistive Switching Behavior in HfO2 with Nb as an Oxygen Exchange Layer
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 290-294

(3 publications)