EME publications 2001
2001
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Book
Access to Scientific Journals in Australian Libraries
National Library of Australia, Canberra, Australia (2001) 58
(1 publications)
Book chapter
Semiconductors: Irradiation Effects
Encyclopaedia of Materials Science and Technology
Elsevier, Netherlands (2001) tba
(1 publications)
Journal article
Preparation of Polycrystalline Silicon Films by Aluminium Induced Crystallization at Low Temperatures
Journal of Inorganic Materials (Wuji Cailiao Xuebao) 16, 4(2001) 688-692
Implantation-induced Disorder in Amorphous Ge: Production and Relaxation
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 21-25
Surface Plasma Passivation of the Polycrystalline Silicon Thin Films by using NH3 or N2O Gas
Journal of Inorganic Materials (Wuji Cailiao Xuebao) 16, 4(2001) 693-696
Electrical Transients in the Ion-Beam-Induced Nitridation of Silicon
Applied Physics Letters 78, 22(2001) 3445-3447
Separation of vacancy and interstitial depth profiles in ion-implanted silicon: experimental observation
Applied Physics Letters 78, 22(2001) 3442-3444
Structural characterisation of amorphised compound semiconductors
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 280-285
Wavelength Insensitive Asymmetric Triple Mode Evolution Couplers
Optics Communications 187(2001) 129-133
Efficiency of dislocations and cavities for gettering of Cu and Fe in silico
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 154-158
Doping of Silicon Carbide by Ion Implantation
Materials Science Forum 353-356(2001) 549-554
Selectivity of Nanocavities and Dislocations for Gettering of Cu and Fe in Silicon
Applied Physics Letters 78, 18(2001) 2682-2684
Self-Ion-induced Swelling of Germanium
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 193-196
Free-Standing Single Crystal Silicon Nanoribbons
Journal of the American Chemical Society 123(2001) 11095-11096
Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Physical Review B 64(2001) 195211/1-10
Fusion around the barrier for 7Li + 12C
Pramana 57, No. 1(2001) 195 - 198
Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys
Applied Physics Letters 79, 12(2001) 1810-1812
Solubility Limit and Precipitate Formation in Al-doped 4H-SiC Epitaxial Material
Applied Physics Letters 79, 13(2001) 2016-2018
The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
Journal of Crystal Growth 222(2001) 786-790
Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking
Journal of Physics D: Applied Physics 34, 16(2001) 2455-2464
Channeling Measurements of Ion Implantation Damage in 4H-SiC
Materials Science Forum 353-356(2001) 595-598
The crystallisation of deep amorphous wells in silicon produced by ion implantation
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 164-168
Defect Formation Due to the Crystallization of Deep Amorphous Volumes Formed in Silicon by Mega Electron Volt (MeV) Ion Implantation
Journal of Materials Research 16, 11(2001) 3229-3237
Carrier transfer between V-grooved quantum wire and vertical quantum well
Physics Letters A 280(2001) 77-80
Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements
Journal of Applied Physics 89, 12(2001) 7932-7939
Application of Selective Implantation in AIGaAs/InGaAs/GaAs Pseudomorphic Single Quantum Wire Structures
Nanotechnology 1(2001) 389-392
Evidence of Blocking Effect on Carrier Trapping Process by Necking Region in a Very Narrow AIGaAs/GaAs V-grooved Quantum Wire Structure
Journal of Applied Physics 90, 10(2001) 5438-5440
Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique
Journal of Physics: Condensed Matter 13, 18(2001) 3923-3930
Flow Structures Generated by Pressure-Controlled Self-Oscillating Reed Valves
Journal of Sound and Vibration 247, 2(2001) 213-226
Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions
Journal of Applied Physics 90, 8(2001) 3867-3872
Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in SiO2
Applied Physics Letters 78, 13(2001) 1912-1914
Epitaxy on GaN bulk crystals
Opto-Electronics Review 9, 2(2001) 125-128
Effect of hydrogen on the photoluminescence of Si nanocrystals embedded in a SiO2 matrix
Applied Physics Letters 78, 9(2001) 1225-1227
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16(2001) 2561-2563
Low energy O2 + and N2 + beam-induced profile broadening effects in Si
Journal of Vacuum Science and Technology A 19, 3(2001) 893-898
Synthesis of III-Nx-V1-x thin films by n ion implantation
Materials Research Society Symposium Proceedings 650(2001)
Interface phonons in CdSe/ZnSe self-assembled quantum dot structures
Physica Status Solidi. B: Basic Research 224, 1(2001) 165-168
Implantation-produced structural damage in InxGa1-xN
Applied Physics Letters 79, 5(2001) 602-604
Interactions of point defects and impurities with open volume defects in silicon
Materials Research Society Symposium Proceedings 647(2001) O2.4.1-O2.4.11
Crystalline-to-amorphous phase transformation in ion-irradiated GaAs
Physical Review B 64, 15(2001) 1552021-1552026
Application of Selective Implantation in Al 0.5Ga 0.5As/In 0.25Ga 0.75As/GaAs Pseudomorphic Single Quantum Wire Structures
Journal of Nanoscience and Nanotechnology 1, 4(2001) 389-392
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4(2001) 2351-2356
Impurity-free intermixing of GaAs/AIGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5(2001) 1962-1966
Mechanical deformation of crystalline silicon during nanoindentation
Materials Research Society Symposium Proceedings 649(2001) Q8.10.1-Q8.10.6
Enhanced gas-solid reaction after extended milling
Journal of Materials Science Letters 20, 20(2001) 1849-1851
Direct Observation of Voids in the Vacancy Excess Region of Ion Bombarded Silicon
Applied Physics Letters 78, 19(2001) 2867-2869
Mechanochemical Processing of Gold-Bearing Sulphides
Minerals Engineering 14, 3(2001) 341-347
Novel Process for Enhanced Lunar Oxygen Recovery
Journal of Materials Science 36(2001) 2343-2348
X-ray diffraction analysis on gallium-indium interdiffusion in quantum dot superlattices
Chinese Physics Letters 18, 6(2001) 810-812
Interaction of Defects and Metals with Nanocavities in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 178(2001) 33-43
Acoustic Impedance Spectra of Classical and Modern Flutes
Journal of Sound and Vibration 243, 1(2001) 127-144
Direct Observation of Irradiation-Induced Nanocavity Shrinkage in Si
Applied Physics Letters 79, 21(2001) 3416-3418
Mechanical properties of As-grown and ion-beam-modified GaN films
Materials Research Society Symposium Proceedings 649(2001) Q5.5.1-Q5.5.6
Formation of diluted III-V nitride thin films by N ion implantation
Journal of Applied Physics 90, 5(2001) 2227-2234
Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy
Physica Status Solidi B (On-line) 188, 2(2001) 681-685
Effect of implant temperature on secondary defects created by MeV Sn implantation is silicon
Journal of Applied Physics 89(2001) 2556-2559
Implantation-Produced Structural Damage in InxGa1-xN
Applied Physics Letters 79, 5(2001) 602-604
High-dose ion implantation into GaN
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 214-218
On Defects Created in 45 keV H--Implanted n-type Cz Si: a Fluence Dependence and Isochronal Annealing Study
Physica B 308-310(2001) 190-192
Effect of Stress on Impurity-free quantum well intermixing
Electrochemical and Solid-State Letters 4(2001) G11-G13
Effect of Rapid Thermal Annealing on the Electrical Properties of Ion-Beam-Synthesized Oxide Layers Using 12 keV O2+ Bombardment of Si
Surface and Interface Analysis 31(2001) 1087-1093
Possibility of improved frequency response from intermixed quantum-well devices
Superlattices and Microstructures 29, 2(2001) 105-110
Electrically Steerable Lasers using Wide-Aperture VCSELs
IEEE Photonics Technology Letters 13, 6(2001) 544-546
Impurity free intermixing of GaAs/AlGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5(2001) 1962-1966
Low energy O2+ and N2+ beam-induced profile broadening effects in Si
Journal of Vacuum Science and Technology A 19, 3(2001) 893-898
Linear optical properties of Ge nanocrystals in silica
Applied Physics Letters 79, 15(2001) 2327-2329
Physical and optical characterisation of Ge-implanted silica
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 637-640
Structural Modifications in Amorphous Ge Produced by Ion Implantation
Nuclear Instruments and Methods in Physics Research: Section B 178(2001) 192-195
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16(2001) 2561-2563
Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition
Physica B 308-310(2001) 776-779
Luminescence from Si Nanocrystals in Silica Deposited by Helicon Activated Reactive Evaporation
Applied Physics Letters 78, 12(2001) 1670-1672
Photoluminescence from Si Nanocrystals ini Silica: The Effect of Hydrogen
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 422-425
Grating Structures with Symmetric Fractionally Organized Gaps
Microwave and Optical Technology Letters 31, 3(2001) 223-229
Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 235-240
Acoustics of a Small Australian Burrowing Cricket: The Control of Low-Frequency Pure-Tone Songs
Journal of Experimental Biology 204(2001) 2827-2841
Optical Fibers with Low Nonlinearity and Low Polarization-Mode Dispersion for Terabit Communications
Optics and Laser Technology 33(2001) 285-291
Role of ZnS Buffer Layers in Growth of Zincblende ZnO on GaAs Substrates by Metalorganic Molecular-Beam Epitaxy
Journal of Crystal Growth 221(2001) 435-439
Electrical isolation of GaN by MeV ion irradiation
Applied Physics Letters 78, 7(2001) 943-945
Electrical isolation of n-type and p-type InP layers by proton bombardment
Journal of Applied Physics 89, 10(2001) 5343-5347
Effect of Hydrogen on the Photoluminescence of Si Nanocrystals Embedded in a SiO2 Matrix
Applied Physics Letters 78, 9(2001) 1225-1227
Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in SiO2
Applied Physics Letters 78, 13(2001) 1912-1914
Experimental Analysis of Reflected Modes in a Multimode Strained Grating
Microwave and Optical Technology Letters 28, 1(2001) 4-8
Mechanical Deformation of InP and GaAs by Spherical Indentation
Applied Physics Letters 78, 21(2001) 3235-3237
Mechanical Deformation in Silicon by Micro-indentation
Journal of Materials Research 16, 5(2001) 1500-1507
Effects of Ambient Pressure on Silicon Nanowire Growth
Chemical Physics Letters 334(2001) 229-232
Recent Progress in the Acoustics of Wind Instruments
Acoustical Science and Technology 22, 3(2001) 169-176
Deformation Behavior of Ion-Beam-Modified GaN
Applied Physics Letters 78, 2(2001) 156-158
Cathodoluminescence Depth Profiling of Ion-Implanted GaN
Applied Physics Letters 78, 1(2001) 34-36
Amorphous Zone Evolution in Si During Elevated Temperature Ion Bombardment
Nuclear Instruments and Methods in Physics Research: Section B 174(2001) 130-136
Fabrication of Epitaxial CoSi2-Nanowires
Applied Physics Letters 79, 6(2001) 824-826
Nanometer Patterning of Thin CoSi2 Films by Application of Local Stress
Microelectronic Engineering 55(2001) 177-182
Effects of excitation density on cathodoluminescence from GaN
Applied Physics Letters 79, 14(2001) 2154-2156
Ion Implantation into GaN
Materials Science and Engineering R-Reports 33(2001) 51-107
Ion-beam-induced reconstruction of amorphous GaN
Physical Review B 63(2001) 113202-1-4
Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures
Applied Physics Letters 78, 10(2001) 1373-1375
The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN
Nuclear Instruments and Methods in Physics Research: Section B 178(2001) 209-213
Effect of the density of collision cascades on implantation damage in GaN
Applied Physics Letters 78, 18(2001) 2694-2696
Effect of ion species on the accumulation of ion-beam damage in GaN
Physical Review B 64(2001) 035202/1-10
"A High Nonlinearity Elliptical Fiber for Applications in Raman and Brillouin Sensors"
Applied Optics 33(2001) 293-298
Reflectivity Spectra Evolution in Grating Structures with Fractionally Organized Gaps
Microwave and Optical Technology Letters 29, 1(2001) 42-45
Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing
Infrared Physics and Technology 42(2001) 171-175
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4(2001) 2351-2356
Tuning the detection wavelength of quantum-well infrared photodetectors by single-high energy implantation
Applied Physics Letters 78, 1(2001) 10-12
Wave Propagation on Helices and Hyperhelices: A Fractal Regression
Proceedings of the Royal Society of London Series A: Mathematical, Physical and Engineering Sciences 457(2001) 33-43
Vibrato in Music
Acoustics Australia 29, 3(2001) 97-102
Photoluminescence study of beryllium implantation induced intrinsic defects in 6H-silicon carbide
Physica B 308(2001) 710-713
Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler
Nuclear Instruments and Methods in Physics Research: Section B 173(2001) 528-532
Structure and Low-temperature Thermal Relaxation of Ion-implanted Germanium
Journal of Synchrotron Radiation 8(2001) 773-775
Ion Beam Modification of Thermal Stress Resistance of MgO Single Crystals with Different Crystallographic Faces
Nuclear Instruments and Methods in Physics Research: Section B 178(2001) 138-143
Structural-relaxation-induced Bond Length and Bond Angle Changes in Amorphized Ge
Physical Review B 63(2001) 073204/1-4
Irradiation-induced defect configurations in Ge substrates characterised with perturbed angular correlation
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 51-55
Electron and trap dynamics in As-ion-implanted and annealed GaAs
Applied Physics Letters 78, 12(2001) 1667-1669
Single-Crystalline Rocksalt CdO Layers Grown on GaAs (001) Substrates by Metalorganic Molecular-Beam Epitaxy
Applied Physics Letters 79, 4(2001) 470-472
(111 publications)
Conference paper
Interactions of Point Defects and Impurities With Open Volume Defects in Silicon
Materials Research Society Meeting Fall 2000 ?, ?(2001) 02.4.1-02.4.11
Synthesis of III-Nx-V1-x thin films by N ion implantation
Materials Research Society Meeting Fall 2000 ?, ?(2001) 013.3.1/R8.3.1-013.3.6/R8.3.6
Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities
199th Meeting of the Electrochemical Society ?, ?(2001) 147-155
Ion Beam Damage Processes in GaN
III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) ?, ?(2001) 150-160
Mechanical Properties of As-Grown and Ion-Beam-Modified GaN Films
Materials Research Society Meeting Fall 2000 ?, ?(2001) Q5.5.1-Q5.5.6
Mechanical Deformation of Crystalline Silicon During Nanoindentation
Materials Research Society Meeting Fall 2000 ?, ?(2001) Q8.10.1-6
(6 publications)
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