EME publications 2001

2001

Note: To search this listing with your browser
press ctrl-f or apple-f

Book

Fletcher N
Access to Scientific Journals in Australian Libraries
National Library of Australia, Canberra, Australia (2001) 58

(1 publications)

Book chapter

Elliman R
Semiconductors: Irradiation Effects
Encyclopaedia of Materials Science and Technology
Elsevier, Netherlands (2001) tba

(1 publications)

Journal article

Ashrafi A, Kumano H, Suemune I, Ok Y, Seong T
Single-Crystalline Rocksalt CdO Layers Grown on GaAs (001) Substrates by Metalorganic Molecular-Beam Epitaxy
Applied Physics Letters 79, 4(2001) 470-472

Pellegrino P, Leveque P, Lalita J, Hallen A, Jagadish C, Svensson B
Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Physical Review B 64(2001) 195211/1-10

Stritzker B, Petravic M, Wong-Leung J, Williams J
Efficiency of dislocations and cavities for gettering of Cu and Fe in silico
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 154-158

Stritzker B, Petravic M, Wong-Leung J, Williams J
Selectivity of Nanocavities and Dislocations for Gettering of Cu and Fe in Silicon
Applied Physics Letters 78, 18(2001) 2682-2684

Stritzker B, Elliman R, Zou J
Self-Ion-induced Swelling of Germanium
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 193-196

Shi W, Peng H, Wang N, Li C, Xu L, Lee C, Kalish R, Lee S
Free-Standing Single Crystal Silicon Nanoribbons
Journal of the American Chemical Society 123(2001) 11095-11096

Schneider V, Hattori H
Wavelength Insensitive Asymmetric Triple Mode Evolution Couplers
Optics Communications 187(2001) 129-133

Ridgway M, Glover C, Yu K, Foran G, Lee T, Moon Y, Yoon E
Structural characterisation of amorphised compound semiconductors
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 280-285

Ridgway M, Glover C, Desnica-Frankovic I, Furic K, Yu K, Foran G, Clerc C, Hansen J, Nylandsted-Larsen A
Implantation-induced Disorder in Amorphous Ge: Production and Relaxation
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 21-25

Rao R, Xu Z, Sun G
Preparation of Polycrystalline Silicon Films by Aluminium Induced Crystallization at Low Temperatures
Journal of Inorganic Materials (Wuji Cailiao Xuebao) 16, 4(2001) 688-692

Rao R
Surface Plasma Passivation of the Polycrystalline Silicon Thin Films by using NH3 or N2O Gas
Journal of Inorganic Materials (Wuji Cailiao Xuebao) 16, 4(2001) 693-696

Petravic M, Deenapanray P
Electrical Transients in the Ion-Beam-Induced Nitridation of Silicon
Applied Physics Letters 78, 22(2001) 3445-3447

Pellegrino P, Leveque P, Wong-Leung J, Jagadish C, Svensson B
Separation of vacancy and interstitial depth profiles in ion-implanted silicon: experimental observation
Applied Physics Letters 78, 22(2001) 3442-3444

Mukherjee A, Dasgupta M, Hinde D, Morton C, Berriman A, Butt R, Newton J, Timmers H, Timmers H
Fusion around the barrier for ⁷Li + ¹²C
Pramana 57, No. 1(2001) 195 - 198

Tarnopolsky A, Lai J, Fletcher N
Flow Structures Generated by Pressure-Controlled Self-Oscillating Reed Valves
Journal of Sound and Vibration 247, 2(2001) 213-226

MacDonald D, Cuevas A, Wong-Leung J
Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements
Journal of Applied Physics 89, 12(2001) 7932-7939

Lu W, Liu Q, Li Z, Shen S, Zhao Q, Fu Y, Willander M, Tan H, Jagadish C, Zou J, Cockayne D
Carrier transfer between V-grooved quantum wire and vertical quantum well
Physics Letters A 280(2001) 77-80

Liu X, Lu W, Shen S, Tan H, Jagadish C, Zou J
Application of Selective Implantation in AIGaAs/InGaAs/GaAs Pseudomorphic Single Quantum Wire Structures
Nanotechnology 1(2001) 389-392

Liu Q, Sasaki A, Ohno N, Li Z, Lu W, Shen S, Fu Y, Willander M, Tan H, Jagadish C
Evidence of Blocking Effect on Carrier Trapping Process by Necking Region in a Very Narrow AIGaAs/GaAs V-grooved Quantum Wire Structure
Journal of Applied Physics 90, 10(2001) 5438-5440

Liu B, Li Q, Xu Z, Ge W
Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique
Journal of Physics: Condensed Matter 13, 18(2001) 3923-3930

Liu A, McCallum J, Wong-Leung J
Defect Formation Due to the Crystallization of Deep Amorphous Volumes Formed in Silicon by Mega Electron Volt (MeV) Ion Implantation
Journal of Materials Research 16, 11(2001) 3229-3237

Liu A, McCallum J, Wong-Leung J
The crystallisation of deep amorphous wells in silicon produced by ion implantation
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 164-168

Linnarsson M, Janson M, Zimmermann U, Svensson B, Persson P, Hultman L, Wong-Leung J, Karlsson S, Schoner A, Bleichner H, Olsson E
Solubility Limit and Precipitate Formation in Al-doped 4H-SiC Epitaxial Material
Applied Physics Letters 79, 13(2001) 2016-2018

Li Q, Xu S, Cheng W, Xie M, Tong S, Che C, Yang H
Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys
Applied Physics Letters 79, 12(2001) 1810-1812

Li N, Fu L, Li N, Chan Y, Lu W, Shen S, Tan H, Jagadish C
The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
Journal of Crystal Growth 222(2001) 786-790

Lederer M, Kolev V, Luther-Davies B, Tan H, Jagadish C
Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking
Journal of Physics D: Applied Physics 34, 16(2001) 2455-2464

Svensson B, Hallen A, Linnarsson M, Kuznetsov A, Janson M, Aberg D, Osterman J, Persson P, Hultman L, Storasta L, Carlsson F, Bergman J, Jagadish C, Morvan E
Doping of Silicon Carbide by Ion Implantation
Materials Science Forum 353-356(2001) 549-554

Titov A, Kucheyev S, Belyakov V, Azarov A
Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions
Journal of Applied Physics 90, 8(2001) 3867-3872

Kucheyev S, Williams J, Zou J, Pearton S, Nakagawa Y
Implantation-Produced Structural Damage in In_xGa_1-xN
Applied Physics Letters 79, 5(2001) 602-604

Deenapanray P, Jagadish C
Impurity-free intermixing of GaAs/AIGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5(2001) 1962-1966

Williams J
Implantation-produced structural damage in InxGa1-xN
Applied Physics Letters 79, 5(2001) 602-604

Williams J
Crystalline-to-amorphous phase transformation in ion-irradiated GaAs
Physical Review B 64, 15(2001) 1552021-1552026

Tan H, Jagadish C
Application of Selective Implantation in Al 0.5Ga 0.5As/In 0.25Ga 0.75As/GaAs Pseudomorphic Single Quantum Wire Structures
Journal of Nanoscience and Nanotechnology 1, 4(2001) 389-392

Tan H, Jagadish C
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4(2001) 2351-2356

Smith L, Lee S
Interface phonons in CdSe/ZnSe self-assembled quantum dot structures
Physica Status Solidi. B: Basic Research 224, 1(2001) 165-168

Ridgway M, Yu K, Walukiewicz W, Beeman J
Synthesis of III-Nx-V1-x thin films by n ion implantation
Materials Research Society Symposium Proceedings 650(2001)

Karouta F
Epitaxy on GaN bulk crystals
Opto-Electronics Review 9, 2(2001) 125-128

Elliman R
Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in SiO2
Applied Physics Letters 78, 13(2001) 1912-1914

Elliman R
Effect of hydrogen on the photoluminescence of Si nanocrystals embedded in a SiO2 matrix
Applied Physics Letters 78, 9(2001) 1225-1227

Deenapanray P, Martin A, Jagadish C
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16(2001) 2561-2563

Deenapanray P, Petravic M
Low energy O2 + and N2 + beam-induced profile broadening effects in Si
Journal of Vacuum Science and Technology A 19, 3(2001) 893-898

Bradby J, Williams J, Wong-Leung J, Swain M
Mechanical deformation of crystalline silicon during nanoindentation
Materials Research Society Symposium Proceedings 649(2001) Q8.10.1-Q8.10.6

Wang H, Xu S, Li Q, Feng S
X-ray diffraction analysis on gallium-indium interdiffusion in quantum dot superlattices
Chinese Physics Letters 18, 6(2001) 810-812

Bradby J, Williams J, Jagadish C, Swain M, Phillips M
Mechanical properties of As-grown and ion-beam-modified GaN films
Materials Research Society Symposium Proceedings 649(2001) Q5.5.1-Q5.5.6

Zhu X, Williams J, Conway M, Ridgway M, Fortuna F, Ruault M, Bernas H
Direct Observation of Irradiation-Induced Nanocavity Shrinkage in Si
Applied Physics Letters 79, 21(2001) 3416-3418

Yu K, Walukiewicz W, Wu J, Beeman J, Ager J, Haller E, Shan W, Xin H, Tu C, Ridgway M
Formation of diluted III-V nitride thin films by N ion implantation
Journal of Applied Physics 90, 5(2001) 2227-2234

Xu S, Or C, Li Q, Zheng L, Xie M, Tong S, Yang H
Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy
Physica Status Solidi B (On-line) 188, 2(2001) 681-685

Wong-Leung J, Jagadish C, Conway M, Fitzgerald J
Effect of implant temperature on secondary defects created by MeV Sn implantation is silicon
Journal of Applied Physics 89(2001) 2556-2559

Wolfe J, Smith J, Tann J, Fletcher N
Acoustic Impedance Spectra of Classical and Modern Flutes
Journal of Sound and Vibration 243, 1(2001) 127-144

Williams J, Ridgway M, Conway M, Wong-Leung J, Zhu X, Petravic M, Fortuna F, Ruault M, Bernas H, Kinomura A, Nakano Y, Hayashi Y
Interaction of Defects and Metals with Nanocavities in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 178(2001) 33-43

Williams J, Conway M, Williams B, Wong-Leung J
Direct Observation of Voids in the Vacancy Excess Region of Ion Bombarded Silicon
Applied Physics Letters 78, 19(2001) 2867-2869

Welham N, Welham N
Enhanced gas-solid reaction after extended milling
Journal of Materials Science Letters 20, 20(2001) 1849-1851

Welham N, Welham N
Mechanochemical Processing of Gold-Bearing Sulphides
Minerals Engineering 14, 3(2001) 341-347

Welham N, Welham N
Novel Process for Enhanced Lunar Oxygen Recovery
Journal of Materials Science 36(2001) 2343-2348

Kuznetsov A, Janson M, Hallen A, Svensson B, Jagadish C, Grunleitner H, Pensl G
Channeling Measurements of Ion Implantation Damage in 4H-SiC
Materials Science Forum 353-356(2001) 595-598

Kucheyev S, Williams J, Zou J, Jagadish C, Li G
High-dose ion implantation into GaN
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 214-218

Ashrafi A, Ueta A, Kumano H, Suemune I
Role of ZnS Buffer Layers in Growth of Zincblende ZnO on GaAs Substrates by Metalorganic Molecular-Beam Epitaxy
Journal of Crystal Growth 221(2001) 435-439

Cheylan S, Elliman R, Gaff K, Gaff K, Mariman E
Luminescence from Si Nanocrystals in Silica Deposited by Helicon Activated Reactive Evaporation
Applied Physics Letters 78, 12(2001) 1670-1672

Dowd A, Elliman R, Luther-Davies B
Linear optical properties of Ge nanocrystals in silica
Applied Physics Letters 79, 15(2001) 2327-2329

Desnica-Frankovic I, Furic K, Desnica U, Ridgway M, Glover C
Structural Modifications in Amorphous Ge Produced by Ion Implantation
Nuclear Instruments and Methods in Physics Research: Section B 178(2001) 192-195

Deenapanray P, Martin A, Jagadish C
Defect engineering in annealed n-type GaAs epilayers using SiO₂/Si₃N₄ stacking layers
Applied Physics Letters 79, 16(2001) 2561-2563

Deenapanray P, Lay M, Aberg D, Tan H, Svensson B, Auret F, Jagadish C
Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition
Physica B 308-310(2001) 776-779

Deenapanray P, Petravic M
Low energy O₂⁺ and N₂⁺ beam-induced profile broadening effects in Si
Journal of Vacuum Science and Technology A 19, 3(2001) 893-898

Deenapanray P, Jagadish C
Impurity free intermixing of GaAs/AlGaAs quantum wells using SiO_x capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5(2001) 1962-1966

Deenapanray P, Jagadish C
Effect of Stress on Impurity-free quantum well intermixing
Electrochemical and Solid-State Letters 4(2001) G11-G13

Deenapanray P
On Defects Created in 45 keV H^--Implanted n-type Cz Si: a Fluence Dependence and Isochronal Annealing Study
Physica B 308-310(2001) 190-192

Deenapanray P
Effect of Rapid Thermal Annealing on the Electrical Properties of Ion-Beam-Synthesized Oxide Layers Using 12 keV O₂⁺ Bombardment of Si
Surface and Interface Analysis 31(2001) 1087-1093

Dao L, Gal M, Fu L, Tan H, Jagadish C
Possibility of improved frequency response from intermixed quantum-well devices
Superlattices and Microstructures 29, 2(2001) 105-110

Cohen M, Allerman A, Choquette K, Jagadish C
Electrically Steerable Lasers using Wide-Aperture VCSELs
IEEE Photonics Technology Letters 13, 6(2001) 544-546

Cheylan S, Elliman R
Photoluminescence from Si Nanocrystals ini Silica: The Effect of Hydrogen
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 422-425

Fan X, Xu L, Li C, Zheng Y, Lee C, Lee S
Effects of Ambient Pressure on Silicon Nanowire Growth
Chemical Physics Letters 334(2001) 229-232

Cheylan S, Elliman R
Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in SiO₂
Applied Physics Letters 78, 13(2001) 1912-1914

Cheylan S, Elliman R
Effect of Hydrogen on the Photoluminescence of Si Nanocrystals Embedded in a SiO₂ Matrix
Applied Physics Letters 78, 9(2001) 1225-1227

Cazo R, Lisboa O, Hattori H, Schneider V, Barbosa C, Rabelo R, Ferreiria L
Experimental Analysis of Reflected Modes in a Multimode Strained Grating
Microwave and Optical Technology Letters 28, 1(2001) 4-8

Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Mechanical Deformation of InP and GaAs by Spherical Indentation
Applied Physics Letters 78, 21(2001) 3235-3237

Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Mechanical Deformation in Silicon by Micro-indentation
Journal of Materials Research 16, 5(2001) 1500-1507

Boudinov H, Tan H, Jagadish C
Electrical isolation of n-type and p-type InP layers by proton bombardment
Journal of Applied Physics 89, 10(2001) 5343-5347

Boudinov H, Kucheyev S, Williams J, Jagadish C, Li G
Electrical isolation of GaN by MeV ion irradiation
Applied Physics Letters 78, 7(2001) 943-945

Boudinov H, de Souza J, Jagadish C
Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 235-240

Barbosa C, Cazo R, Hattori H
Grating Structures with Symmetric Fractionally Organized Gaps
Microwave and Optical Technology Letters 31, 3(2001) 223-229

Bailey W, Bennet-Clark H, Fletcher N
Acoustics of a Small Australian Burrowing Cricket: The Control of Low-Frequency Pure-Tone Songs
Journal of Experimental Biology 204(2001) 2827-2841

Baghdadi J, Safaai-Jazi A, Hattori H
Optical Fibers with Low Nonlinearity and Low Polarization-Mode Dispersion for Terabit Communications
Optics and Laser Technology 33(2001) 285-291

Dowd A, Llewellyn D, Elliman R, Luther-Davies B, Samoc M, Fitzgerald J
Physical and optical characterisation of Ge-implanted silica
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 637-640

Fletcher N
Recent Progress in the Acoustics of Wind Instruments
Acoustical Science and Technology 22, 3(2001) 169-176

Kucheyev S, Williams J, Zou J, Jagadish C, Li G
Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures
Applied Physics Letters 78, 10(2001) 1373-1375

Hattori H, Schneider V, Lisboa O, Cazo R
"A High Nonlinearity Elliptical Fiber for Applications in Raman and Brillouin Sensors"
Applied Optics 33(2001) 293-298

Kucheyev S, Williams J, Zou J, Bradby J, Jagadish C, Li G
Ion-beam-induced reconstruction of amorphous GaN
Physical Review B 63(2001) 113202-1-4

Kucheyev S, Williams J, Zou J, Jagadish C, Li G
The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN
Nuclear Instruments and Methods in Physics Research: Section B 178(2001) 209-213

Kucheyev S, Williams J, Titov A, Li G, Jagadish C
Effect of the density of collision cascades on implantation damage in GaN
Applied Physics Letters 78, 18(2001) 2694-2696

Kucheyev S, Williams J, Jagadish C, Zou J, Li G, Titov A
Effect of ion species on the accumulation of ion-beam damage in GaN
Physical Review B 64(2001) 035202/1-10

Kucheyev S, Williams J, Pearton S
Ion Implantation into GaN
Materials Science and Engineering R-Reports 33(2001) 51-107

Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C
Effects of excitation density on cathodoluminescence from GaN
Applied Physics Letters 79, 14(2001) 2154-2156

Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C, Li G
Cathodoluminescence Depth Profiling of Ion-Implanted GaN
Applied Physics Letters 78, 1(2001) 34-36

Kucheyev S, Bradby J, Williams J, Jagadish C, Swain M, Li G
Deformation Behavior of Ion-Beam-Modified GaN
Applied Physics Letters 78, 2(2001) 156-158

Kucheyev S
Amorphous Zone Evolution in Si During Elevated Temperature Ion Bombardment
Nuclear Instruments and Methods in Physics Research: Section B 174(2001) 130-136

Kluth P, Zhao Q, Winnerl S, Lenk S
Fabrication of Epitaxial CoSi2-Nanowires
Applied Physics Letters 79, 6(2001) 824-826

Kluth P, Detavernier C, Zhao Q, Xu J, Kappius L, Bay H, Lenk S, Mantl S
Nanometer Patterning of Thin CoSi2 Films by Application of Local Stress
Microelectronic Engineering 55(2001) 177-182

Hattori H, Schneider V, Barbosa C, Cazo R
Reflectivity Spectra Evolution in Grating Structures with Fractionally Organized Gaps
Microwave and Optical Technology Letters 29, 1(2001) 42-45

Fletcher N
Vibrato in Music
Acoustics Australia 29, 3(2001) 97-102

Gurarie V, Otsuka P, Williams J, Conway M
Ion Beam Modification of Thermal Stress Resistance of MgO Single Crystals with Different Crystallographic Faces
Nuclear Instruments and Methods in Physics Research: Section B 178(2001) 138-143

Glover C, Ridgway M, Yu K, Foran G, Clerc C, Hansen J, Nylandsted-Larsen A
Structure and Low-temperature Thermal Relaxation of Ion-implanted Germanium
Journal of Synchrotron Radiation 8(2001) 773-775

Glover C, Ridgway M, Yu K, Foran G, Desnica-Frankovic I, Clerc C, Hansen J, Nylandsted-Larsen A
Structural-relaxation-induced Bond Length and Bond Angle Changes in Amorphized Ge
Physical Review B 63(2001) 073204/1-4

Glover C, Byrne A, Byrne A, Ridgway M
Irradiation-induced defect configurations in Ge substrates characterised with perturbed angular correlation
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 51-55

Giniunas L, Danielius R, Tan H, Jagadish C, Adomavicius R, Krotkus A
Electron and trap dynamics in As-ion-implanted and annealed GaAs
Applied Physics Letters 78, 12(2001) 1667-1669

Gal M, Wengler M, Ilyas S, Rofii I, Tan H, Jagadish C
Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler
Nuclear Instruments and Methods in Physics Research: Section B 173(2001) 528-532

Fung S, Chen X, Beling C, Huang Y, Li Q, Xu S, Gong M, Hankel T, Kobayashi N
Photoluminescence study of beryllium implantation induced intrinsic defects in 6H-silicon carbide
Physica B 308(2001) 710-713

Fu Y, Willander M, Liu Q, Lu W, Shen S, Tan H, Jagadish C, Zou J, Cockayne D
Optical transition in infrared photodetector based on V-groove Al_0.5Ga_0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4(2001) 2351-2356

Fu L, Tan H, Jagadish C, Li N, Li N, Liu Q, Lu W, Shen S
Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing
Infrared Physics and Technology 42(2001) 171-175

Fu L, Tan H, Jagadish C, Li N, Li N, Liu Q, Lu W, Shen S
Tuning the detection wavelength of quantum-well infrared photodetectors by single-high energy implantation
Applied Physics Letters 78, 1(2001) 10-12

Fletcher N, Tarnopolskaya T, de Hoog F
Wave Propagation on Helices and Hyperhelices: A Fractal Regression
Proceedings of the Royal Society of London Series A: Mathematical, Physical and Engineering Sciences 457(2001) 33-43

Williams J, Ridgway M, Conway M, Wong-Leung J, Williams B, Petravic M
Interactions of point defects and impurities with open volume defects in silicon
Materials Research Society Symposium Proceedings 647(2001) O2.4.1-O2.4.11

(111 publications)

Conference paper

Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Mechanical Deformation of Crystalline Silicon During Nanoindentation
Materials Research Society Meeting Fall 2000 ?, ?(2001) Q8.10.1-6

Kucheyev S, Bradby J, Williams J, Swain M, Toth M, Phillips M, Jagadish C
Mechanical Properties of As-Grown and Ion-Beam-Modified GaN Films
Materials Research Society Meeting Fall 2000 ?, ?(2001) Q5.5.1-Q5.5.6

Kucheyev S, Williams J, Zou J, Jagadish C, Bradby J, Li G
Ion Beam Damage Processes in GaN
III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) ?, ?(2001) 150-160

Petravic M, Williams J, Deenapanray P
Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities
199th Meeting of the Electrochemical Society ?, ?(2001) 147-155

Williams J, Ridgway M, Conway M, Wong-Leung J, Williams B, Petravic M, Fortuna F, Ruault M, Bernas H
Interactions of Point Defects and Impurities With Open Volume Defects in Silicon
Materials Research Society Meeting Fall 2000 ?, ?(2001) 02.4.1-02.4.11

Yu K, Walukiewicz W, Shan W, Wu J, Beeman J, Ager J, Haller E, Ridgway M
Synthesis of III-N_x-V_1-x thin films by N ion implantation
Materials Research Society Meeting Fall 2000 ?, ?(2001) 013.3.1/R8.3.1-013.3.6/R8.3.6

(6 publications)