» Research » Department of Electronic Materials Engineering » Electronic materials group » Functional oxides
We study the physics and materials science of thin-film metal-oxides with an emphasis on their application in low-power oxide electronics, such as non-volatile memory, hardware-based and environmental-sensing neuromorphic computing.
Metal-oxide films exhibit characteristic resistance changes when subjected to large electric fields or current densities due to the drift and diffusion of atoms and ions, and the strong temperature dependence of their electrical conductivity. These dependencies provide interesting functionality for low power oxide electronics, with potential applications including non-volatile memory, environmental-sensing and hardware-based neuromorphic computing. The Functional-Oxide Group studies the physics and materials science of these processes and explores their potential for device applications.
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