Ion beam modification of materials

We study the application of ion-implantation for advanced electronic and photonic device development. Current research is focused on defect engineering in 2D materials as a means of tailoring their physical and chemical properties, and the reduction of contact resistance in next generation silicon-based devices.

Ion-implantation is a routine semiconductor device-fabrication process that modifies the properties of materials by irradiating them with energetic ions. The material properties are modified both by the presence of the implanted species (e.g. semiconductor doping) and the radiation damage created by the energetic ion (e.g. electrical isolation). The IBMM Group studies the application of such processes in advanced electronic and photonic device applications, with current research focused on defect engineering in 2D materials as a means of tailoring their physical and chemical properties, and the reduction of contact resistance in next generation Si-based devices. Our research exploits the capabilities of the Australian Facility for Advanced ion-implantation Research (AFAiiR) which is funded by the National Collaborative Research Infrastructure Strategy (NCRIS) and hosted by the Group.

Contacts

Robert Elliman

(02) 612 50521