Electronic materials group

Book chapter

( publications)


Nanoscale materials modification for device applications
Ion Beams in Nanoscience and Technology
Springer, Berlin (2009) 329-355

Semiconductors: Irradiation Effects
Encyclopaedia of Materials Science and Technology
Elsevier, Netherlands (2001) tba

Semiconductor Heterostructures
Proceedings of the Tenth Physics Summer School 'Physics of Novel Materials
World Scientific, Singapore (1997) 235-253

Journal article

( publications)

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Room temperature electrical characteristics of gold-hyperdoped silicon
Journal of Applied Physics 135, 9()
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Optically Tunable Electrical Oscillations in Oxide-Based Memristors for Neuromorphic Computing
Advanced Materials ()
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2D Weyl-Semimetal States Achieved by a Thickness-Dependent Crossover and Topological Phase Transition in Bi0.96Sb0.04 Thin Films
Advanced Functional Materials 33, 51() 10
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Tri-State Memristors Based on Composable Discrete Devices
International Journal of Bifurcation and Chaos 33, 7()
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Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb2O5/Pt Memristors
ACS Applied Materials and Interfaces 15, 50() 58613 - 58622
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Harnessing Metal/Oxide Interlayer to Engineer the Memristive Response and Oscillation Dynamics of Two-Terminal Memristors
Advanced Functional Materials 33, 52() 2306428
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The structure and electronic properties of tetrahedrally bonded hydrogenated amorphous carbon
Applied Physics Letters 122, 18()
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Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid-State Oscillator
Advanced Materials 35, 8() 2208477
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Characterization and modeling of spiking and bursting in experimental NbOx neuron
Neuromorphic Computing and Engineering 2, 4()
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Possible permanent Dirac- to Weyl-semimetal phase transition by ion implantation
Asia Materials NPG 14, 1() 1-8
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Universal Dynamics Analysis of Locally-Active Memristors and Its Applications
IEEE Transactions on Circuits and Systems Part I: Regular Papers 69, 3() 1278 - 1290
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Low energy ion beam-induced joining of TiO2 nanoparticles
Journal of Alloys and Compounds 924()
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Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching
ACS Applied Materials and Interfaces 14, 18() 21270 - 21277
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High Spatial Resolution Thermal Mapping of Volatile Switching in NbOx-Based Memristor Using In Situ Scanning Thermal Microscopy
ACS Applied Materials and Interfaces 14, 25() 29025-29031
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Low-Variance Memristor-Based Multi-Level Ternary Combinational Logic
IEEE Transactions on Circuits and Systems Part I: Regular Papers 69, 6()
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Ion beam joining of ceramic and carbon-based nanostructures
Applied Surface Science 554()
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Understanding composite negative differential resistance in niobium oxide memristors
Journal of Physics D: Applied Physics 55, 10() 1-12
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High performance bulk photovoltaics in narrowbandgap centrosymmetric ultrathin films
Materials Horizons 7, 3() 898-904
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Electric Field- And Current-Induced Electroforming Modes in NbOx
ACS Applied Materials and Interfaces 12, 7() 8422-8428
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Swift heavy ion irradiation of GaSb: From ion tracks to nanoporous networks
Physical Review Materials 4, 4() 1-11
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Depth profiling of ion-implanted samples by high-energy electron scattering
Journal of Physics D: Applied Physics 53()
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Nanoscale modification of one-dimensional single-crystalline cuprous oxide
Nanotechnology 30, 36() 1-14
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The composition, structure and properties of four different glassy carbons
Journal of Non-crystalline Solids 522, 119561() 1-8
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Characterization of oxygen self-diffusion in TiO2 resistive-switching layers by nuclear reaction profiling
Nuclear Instruments and Methods in Physics Research: Section B 441() 8-11
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Forming-free bipolar resistive switching and quantum conductance in NiO/FTO structures
Journal of Physics D: Applied Physics 52, 46() 1-5
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Room temperature synthesis of HfO2/HfO x heterostructures by ion-implantation
Nanotechnology 29, 42() 9
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Two-dimensional photonic crystals increasing vertical light emission from Si nanocrystal-rich thin layers
Beilstein Journal of Nanotechnology 9() 2287-2296
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Mechanical properties of tungsten following rhenium ion and helium plasma exposure
Nuclear Materials and Energy 12() 1336-1341
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Coupling dynamics of Nb/Nb 2 O 5 relaxation oscillators
Nanotechnology 28, 12() 125201-125201
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Oxygen diffusion in TiO2 films studied by electron and ion Rutherford backscattering
Thin Solid Films 629() 97-102
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Quantification of germanium-induced suppression of interstitial injection during oxidation of silicon
Journal of Materials Science 52, 17() 10387-10392
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Temperature dependent frequency tuning of NbOx relaxation oscillators
Applied Physics Letters 111, 20() 1-4
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Silicon nanocrystal-based photonic crystal slabs with broadband and efficient directional light emission
Scientific Reports 7, 5763() 1-8
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Effect of rhenium irradiations on the mechanical properties of tungsten for nuclear fusion applications
Journal of Nuclear Materials 477() 42-49
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Threshold switching and electrical self-oscillation in niobium oxide films
Journal of Applied Physics 120, 12()
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Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field
Nanotechnology 27, 49() 1-8
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Synthesis of graphene and graphene nanostructures by ion implantation and pulsed laser annealing
Journal of Applied Physics 120, 2() 025105-1-9
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Diamond structure recovery during ion irradiation at elevated temperatures
Nuclear Instruments and Methods in Physics Research: Section B 365() 331-335
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Advances in ion beam modification of semiconductors
Current Opinion in Solid State and Materials Science 19, 1() 49-67
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High-endurance megahertz electrical self-oscillation in Ti/NbOx bilayer structures
Applied Physics Letters 106, 21() 1-4
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Analysis of multi-layer ERBS spectra
Journal of Electron Spectroscopy and Related Phenomena 202() 26-32
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Graded silicon nitride films: Optics and passivation
Journal of Vacuum Science and Technology A 33, 6() 060610-1 to 060610-5
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Graphene synthesis by C implantation into Cu foils
Carbon 66, January 2014() 267-271
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Reduced threshold current in NbO2 selector by engineering device structure
IEEE Electron Device Letters 35, 10() 1055-1057
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Hyperfine clock transitions of bismuth donors in silicon detected by spin-dependent recombination
Physical Review B 89, 15() 155202
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Effect of Microstructure on Dielectric Breakdown in Amorphous HfO2 Films
Microscopy and Microanalysis 20, 3()
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Effect of Zn Doping on Structural and Magnetic Properties of Ba4Ni2-xZnxFe36O60 Hexaferrites
Journal of Superconductivity and Novel Magnetism 27, 12() 2655-2662
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Effect of crystallization on the reliability of unipolar resistive-switching in HfO2-based dielectrics
Current Applied Physics 14, Supplement 1() S88-S92
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The effect of annealing ambient on carrier recombination in boron implanted silicon
Physica Status Solidi: Rapid Research Letters 8, 10() 827-830
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Influence of implantation damage on emitter recombination
Energy Procedia 55() 272-279
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Metallic surface doping of SiOx nanowires
International Journal of Nanotechnology 11, 5-8() 594-600
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Oxygen Self-Diffusion in HfO2 Studied by Electron Spectroscopy
Physical Review Letters 112, 17() 1-5
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The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbOx films
Nuclear Instruments and Methods in Physics Research: Section B 340() 58-62
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Formation of ordered arrays of gold particles by nanoindentation templating
Physica Status Solidi: Rapid Research Letters 8, 1() 48-51
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Boron implanted, laser annealed p(+) emitter for n-type interdigitated back-contact solar cells
Energy Procedia 55() 320-325
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Modeling Solid Phase Epitaxial Growth for Patterned Ge Substrates
ECS Journal of Solid State Science and Technology 2, 4() P130-P133
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Substrate orientation dependence on the solid phase epitaxial growth rate of Ge
Journal of Applied Physics 113, 3()
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Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)
Nuclear Instruments and Methods in Physics Research: Section B 307() 98-101
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Determination of thickness and composition of high-k dielectrics using high-energy electrons
Applied Physics Letters 103, 7() 071911/1-4
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Assessment of Wind and Solar Energy Resources in Bangladesh
Arabian Journal for Science and Engineering 38, 11() 3113-3123
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Temperature dependence of blistering in hydrogen implanted Si and Ge
Nuclear Instruments and Methods in Physics Research: Section B 307() 29-32
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Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteries
Journal of Power Sources 223() 336-340
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Formation and characterization of Ta2O5/TaOx films formed by O ion implantation
Nuclear Instruments and Methods in Physics Research: Section B 307() 491-494
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Volatile CuOH as a precursor for the growth of CuO nanowires
Microelectronic Engineering 108() 200-203
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Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence
Journal of Applied Physics 114, 5() 6
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SiOx/GeOx nanowires grown via the active oxidation of Si/Ge substrates
Materials Science Forum 700() 133-136
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Controlled Lateral Growth of Silica Nanowires and Coaxial Nanowire Heterostructures
Journal of Physical Chemistry C 116, 5() 3329-3333
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Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing
Applied Physics Letters 100, 19() 193105,1-4
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Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields
Applied Physics Letters 101, 8() 082409
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Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes
Applied Physics Letters 100, 8()
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The Mechanical and Photochemical Properties of Titania Coated Silica Nanowires
ECS Journal of Solid State Science and Technology 1, 5() Q114-Q118
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Fabrication of coaxial nanawire heterostructures: SiOx nanowires with conformal TiO2 coatings
Applied Physics A: Materials Science and Processing 107, 3() 749-754
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Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films
Optical Materials Express 2, 9() 1270-1277
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The effect of annealing temperature, residual O2 partial pressure, and ambient lfow rate on teh growth of SiOx nanowires
Applied Physics A: Materials Science and Processing 107, 4() 885-890
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Role of nucleation sites on the formation of nanoporous Ge
Applied Physics Letters 101, 13() 131907-1 - 131907-4
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Insights for void formation in ion-implanted Ge
Thin Solid Films 519, 18() 5962-5965
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Strong enhancement of ultraviolet emission from ZnO films by V implantation
Journal of Vacuum Science and Technology B 29, 2() 021207-1-4
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Effect of (O, As) dual implantation on p-type doping of ZnO films
Journal of Applied Physics 110, 10() 1-3
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Nonvolatile memories using deep traps formed in HfO2 by Nb ion implantation
Journal of Applied Physics 109, 5() 5
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Interface stability in stressed solid-phase epitaxial growth
Journal of Vacuum Science and Technology B 29, 4() 1-4
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GeOx and SiOx nanowires grown via the active oxidation of Ge and Si substrates
Journal of Materials Research 26, 17() 2240-2246
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SiOx Nanowires Grown via the Active Oxidation of Silicon
IEEE Journal on Selected Topics in Quantum Electronics 17, 4() 785-793
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Nanomechanical properties of sputter-deposited HfO2 and HfxSi1-xO2 thin films
Journal of Applied Physics 110, 4() 043527
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Rapid, substrate-independent thickness determination of large area graphene layers
Applied Physics Letters 99, 23() 4106-1-4106-3
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Self-assembled growth and luminescence of crystalline Si/SiOx core-shell nanowires
Nanotechnology 21, 20() 1-7
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Effect of n- and p-type dopants on patterned amorphous regrowth
Journal of Vacuum Science and Technology B 28, 1() C1F1-C1F5
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Secondary Growth and Photoluminescence from Erbium Implanted Silica Nanowires
Journal of Applied Physics 107, 4() 046101
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Saturation of Photoluminescence Intensity from Si Nanocrystals Exposed to Atomic Hydrogen
Journal of the Korean Physical Society 54, 2() 736-739
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Gold bead-strings in silica nanowires: a simple diffusion model
Nanotechnology 20, 085613() 1-5
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Nonvolatile memories using deep traps formed in Al2O3 by metal ion implantation
Applied Physics Letters 94, 11() 11112110-1 - 112110-3
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Nonvolatile-Memory Characteristics of AlO?-Implanted Al2O3
IEEE Electron Device Letters 30, 8() 837-839
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Formation characteristics and photoluminescence of Ge nanocrystals in HfO2
Journal of Applied Physics 105, 10() 1-3
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Elasto-plastic characterisation of low-temperature plasma-deposited silicon nitride thin films using nanoindentation
International Journal of Surface Science and Engineering 3, 1/2() 3 - 22
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Modeling two-dimensional solid-phase epitaxial regrowth using level set methods
Journal of Applied Physics 105, 053701() 1-5
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A wind-PV-battery hybrid power system at Sitakunda in Bangladesh
Energy Policy 37, 9() 3659-3664
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Stressed multidirectional solid-phase epitaxial growth of Si
Journal of Applied Physics 105, 081101() 1-20
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Self-assembled nanoparticle spirals from two-dimensional compositional banding in thin films
Applied Physics Letters 94, 213110() 1-3
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Effect of low Ge content on B diffusion in amorphous SiGe alloys
Journal of Vacuum Science and Technology B 26, 1() 333-337
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Effect of carbon codoping on boron diffusion in amorphous silicon
Applied Physics Letters 93, 072107() 1-3
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Boron diffusion in amorphous silicon-germanium alloys
Applied Physics Letters 92, 172108() 1-3
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Ion beam synthesis and doping of photonic nanostructures
Nuclear Instruments and Methods in Physics Research: Section B 266() 1362-1366
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Optical emission from erbium-doped silica nanowires
Journal of Applied Physics 103, 104304() 1-5
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Defects in Ge and Si caused by 1 MeV Si+ implantation
Journal of Vacuum Science and Technology B 26, 1() 425-429
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Photoluminescence from Si nanocrystals exposed to a hydrogen plasma
Journal of Applied Physics 104, 083518() 1-4
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Ultrafast decay of femtosecond laser-induced grating in silicon-quantum-dot-based optical waveguides
Journal of Physics D: Applied Physics 41, 015103() 1-5
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Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers
Journal of Vacuum Science and Technology B 26, 1() 425-429
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Erbium Emission from Nanoengineered Silicon Surface
Journal of Physical Chemistry C 112() 20109-20113
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In-situ XTEM Analysis of the Liquid Phase Epitaxial Growth of a-Si/Au alloy layer
Microscopy and Microanalysis 14, 2 (Supp)() 1338-1339
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Synthesis of nickel disilicide quantum dots in silicon dioxide films
Colloids and Surfaces A: Physicochemical and Engineering Aspects 313() 365-368
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Novel crack propagation in PECVD-deposited dielectric thin films
Nuclear Instruments and Methods in Physics Research: Section B 257() 554-557
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Waveguiding properties of Er-implanted silicon-rich oxides
Nuclear Instruments and Methods in Physics Research: Section B 257() 11-14
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Oscillating cracks in glassy films on silicon substrates
Philosophical Magazine 87, 31() 4893-4906
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Regrowth-related defect formation and evolution in MeV amorphized (001) Ge
Applied Physics Letters 90() 132114 1-3
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Modified spontaneous emission of silicon nanocrystals embedded in artificial opals
Journal of Physics D: Applied Physics 40() 5847-5853
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Electron inelastic mean free path in solids as determined by electron Rutherford back-scattering
Journal of Electron Spectroscopy and Related Phenomena 156-158() 387-392
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Orientation Dependent Ion Beam Mixing of Ta/Si Interfaces
Nuclear Instruments and Methods in Physics Research: Section B 249() 200-203
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Stress and Stress Relief in Dielectric Thin Films - The Role of Hydrogen
Nuclear Instruments and Methods in Physics Research: Section B 249() 310-313
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Pump-probe Experiments at 1.54 ?m on Silicon-rich Silicon Oxide Waveguides
Journal of Applied Physics 100, 1() 014902-1-3
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Cross-sectional Transmission Electron Microscopy Method and Studies of Implant Damage in Single Crystal Diamond
Journal of Vacuum Science and Technology A 24, 4() 1302-1307
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Light Propogation in Planar Optical Waveguides made of Silicon Nanocrystals Buried in Silica Glass
Thin Solid Films 515() 797-800
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Silicon Nanocrystals in Silica - Novel Active Waveguides for Nanophotonics
Journal of Luminescence 121() 267-273
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Structural and Optical Characterization of Ge Nanocrystals Showing Large Nonvolatile Memories in Metal-oxide-semiconductor Structures
Journal of the Korean Physical Society 49, 3() 959-962
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On Optical Activity of Er3+ Ions in Si-Rich SiO2 Waveguides
Applied Physics Letters 89, 17() 171908-1-3
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Annealing Temperature Dependence of Capacitance-voltage Characteristics in Ge-Nanocrystals-based Nonvolatile Memory Structures
Journal of Applied Physics 99, 3() 036101-1-3
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Large Capacitance-voltage Hysteresis Loops in SiO2 Films containing Ge Nanocrystals produced by Ion Implantation and Annealing
Applied Physics Letters 88, 7() 071916-1-3
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Waveguide Cores Containing Silicon Nanocrystals as Active Spectral Filters for Silicon-based Photonics
Applied Physics B: Lasers and Optics 83() 87-91
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Preferential Amorphisation of Ge Nanocrystals in a Silica Matrix
Nuclear Instruments and Methods in Physics Research: Section B 242() 121-124
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Effect of Substrate Proximity on Luminescence Yield from Si Nanocrystals
Applied Physics Letters 89, 11() 111124-1-3
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Maximising Light Emission from Silicon Nanocrystals - The Role of Hydrogen
Nuclear Instruments and Methods in Physics Research: Section B 242() 303-306
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Direct Growth of Nickel Disilicide Nanocrystals in Silicon Dioxide Films
Journal of Applied Physics 99, 11() 116106-1-3
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Isotopically Enriched 10BN Nanotubes
Advanced Materials 18() 2157-2160
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Hydrogen Softening and Optical Transparency in Si-incorporated Hyrogenated Amorphous Carbon Films
Journal of Applied Physics 98, 10() 103505-1-6
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Origins of the Residual Pulse Height Deficit in Propane-Filled Gas Ionization Detectors
Nuclear Instruments and Methods in Physics Research: Section A 550() 139-144
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Optical gain in different silicon nanocrystal systems
Optical Materials 27() 745-749
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Photoluminescence from an Active Planar Optical Waveguide made of Silicon Nanocrystals: Dominance of Leaky Substrate Modes in Dissipative Structures
Optical Materials 27() 781-786
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Ion-Irradiation-Induced Preferential Amorphization of Ge Nanocrystals in Silica
Physical Review B: Condensed Matter and Materials 71, 9() 094107-1-6
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Strong paramagnetism and possible ferromagnetism in pure carbon nanofoam produced by laser ablation
Journal of Magnetism and Magnetic Materials 290-291() 298-301
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Heavy Ion Induced Intermixing at Ta/Si and Ta/SiO2 Interfaces
Nuclear Instruments and Methods in Physics Research: Section B 226() 309-319
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Round Robin: Measurement of H Implantation Distributions in Si by Elastic Recoil Detection
Nuclear Instruments and Methods in Physics Research: Section B 222() 547-566
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Gallium and Oxygen Accumulations on Gallium Nitride Surfaces Following Argon Ion Milling in Ultra-High Vacuum Conditions
Applied Surface Science 230() 18-23
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Structural Perturbations Within Ge Nanocrystals in Silica
Applied Physics Letters 84, 2() 278-280
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Heavy Ion Elastic Recoil Detection Analysis of Silicon-Rich Silica Films
Nuclear Instruments and Methods in Physics Research: Section B 219-220() 680-685
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Hydrogen Detection with a Gas Ionization Elastic Recoil Detector
Nuclear Instruments and Methods in Physics Research: Section B 219-220() 410-414
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Light Emission from Silicon Nanocrystals - Size does Matter !
Journal of the Korean Physical Society 45() S656-S660
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Luminescence Study of Si and Ge Implanted (1-102) Sapphires
Journal of the Korean Physical Society 45() S501-S504
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Effect of Material Structure on Photoluminescence Spectra from Silicon Nanocrystals
Journal of Applied Physics 96, 8() 4650-4652
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Origin of Luminescence from Si - Implanted (1102) Al2O3
Applied Physics Letters 84, 14() 2667-2669
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EXAFS Characterisation of Ge Nanocrystals in Silica
Nuclear Instruments and Methods in Physics Research: Section B 218() 421-426
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Unconventional Magnetism in All-Carbon Nanofoam
Physical Review B: Condensed Matter and Materials 70, 5() 054407-1-9
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Microcavity-like leaky mode emission from a planar optical waveguide made of luminescent silicon nanocrystals
Journal of Applied Physics 96, 9() 5222-5225
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Modification of Mechanical Properties of Silicon Nanocantilevers by Self-ion Implantation
Applied Physics Letters 84, 16() 3148-3150
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Photonic Band-gap Effects on Photoluminescence of Silicon Nanocrystals Embedded in Artificial Opals
Journal of Applied Physics 93, 8() 4471-4474
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Active Planar Optical Waveguide Made from Luminescent Silicon Nanocrystals
Applied Physics Letters 82, 6() 955-957
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Kinetics of H2 Passivation of Si Nanocrystals in SiO2
Physical Review B 68() 155302-1-8
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Passivation of Si Nanocrystals in SiO2: Atomic Versus Molecular Hydrogen
Applied Physics Letters 83, 26() 5512-5514

President's column
Australian Physics 40, 3() 67-
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Crystal Size and Oxygen Segregation for Polycrystalline GaN
Journal of Applied Physics 92, 6() 3397-3403
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Silicon Detector Response to Heavy Ions at Energies of 1-2MeV/amu
Nuclear Instruments and Methods in Physics Research: Section B 190() 387-392
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A Systematic Study of the Pulse Height Deficit in Propane-Filled Gas Ionization Detectors
Nuclear Instruments and Methods in Physics Research: Section A 483() 676-688
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Accurate Depth Profiling Through Energy-Dependent Pulse Height Deficit Compensation in Gas Ionization Detectors
Nuclear Instruments and Methods in Physics Research: Section B 190() 397-401
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Unique Capabilities of Heavy Ion Elastic Recoil Detection with Gas Ionization Detectors
Nuclear Instruments and Methods in Physics Research: Section B 190() 393-396
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Threshold Stoichiometry for Beam Induced Nitrogen Depletion of SiN
Nuclear Instruments and Methods in Physics Research: Section B 190() 428-432
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Measurements of Si Ion Stopping in Amorphous Silicon
Nuclear Instruments and Methods in Physics Research: Section B 190() 84-88
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Measurement and Uncertainties of Energy Loss in Silicon over a Wide Z1 Range using Time of Flight Detector Telescopes
Nuclear Instruments and Methods in Physics Research: Section B 195() 133-146
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15th international conference on Ion-Beam Analysis (IBA-15): 12th AINSE conference on Nuclear Techniques of Analysis (NTA-12)
Nuclear Instruments and Methods in Physics Research: Section B 190, 1-4() vii-viii
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Effect of Hydrogen on the Photoluminescence of Si Nanocrystals Embedded in a SiO2 Matrix
Applied Physics Letters 78, 9() 1225-1227
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Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in SiO2
Applied Physics Letters 78, 13() 1912-1914
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Photoluminescence from Si Nanocrystals ini Silica: The Effect of Hydrogen
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 422-425
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Luminescence from Si Nanocrystals in Silica Deposited by Helicon Activated Reactive Evaporation
Applied Physics Letters 78, 12() 1670-1672
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Linear optical properties of Ge nanocrystals in silica
Applied Physics Letters 79, 15() 2327-2329
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Physical and optical characterisation of Ge-implanted silica
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 637-640
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Self-Ion-induced Swelling of Germanium
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 193-196
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The Effect of Ion-Irradiation and Annealing on the Luminescence of Si Nanocrystals in SiO2
Nuclear Instruments and Methods in Physics Research: Section B 166-167() 851-856
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Intrinsic Defect-Related Blue-Violet and Ultraviolet Photoluminescence from Si+-Implanted Fused Silica
Applied Physics Letters 76() 2062-2064
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Heavy-ion elastic-recoil detection ananlysis of doped-silica films for integrated photonics
Nuclear Instruments and Methods in Physics Research: Section B 161() 624-628
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Simultaneous Hydrogen Detection with an ERD Gas Ionization Detector
Nuclear Instruments and Methods in Physics Research: Section B 161-163() 231-234
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New design features of gas ionization detectors used for elastic recoil detection
Nuclear Instruments and Methods in Physics Research: Section A 447() 536-543
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Simplifying position-sensitive gas-ionization detectors for heavy ion elastic recoil detection
Nuclear Instruments and Methods in Physics Research: Section B 161-163() 19-28
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Characterization of Silicon Oxynitride Films using Ion Beam Analysis Techniques
Nuclear Instruments and Methods in Physics Research: Section B 170() 461-466
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Correlation of Energy-loss and collected-charge in Si DE detectors: measurements using an Enge spectrometer
Nuclear Instruments and Methods in Physics Research: Section B 164-165() 186-190
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Dose Dependence of Room Temperature Photoluminescence from Si Implanted SiO2
Journal of Luminescence 80() 213-216
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The effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2
Nuclear Instruments and Methods in Physics Research: Section B B148() 986-990
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Negative Photoconductivity in SiO2 Films Containing Si Nanocrystals
Applied Physics Letters 74, 26() 3987-3989
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Reversible Charging Effects in SiO2 Films Containing Si Nanocrystals
Applied Physics Letters 75, 7() 968-970
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Nonlinear Optical Response of Ge Nanocrystals in a Silica Matrix
Applied Physics Letters 74, 2() 239-241
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Nonlinear Optical Properties of Semiconducting Nanocrystal in Fused Silica
Nuclear Instruments and Methods in Physics Research: Section B B148() 964-968
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Defects Formed During 1 MeV Si Ion-Irradiation of GeSi/Si Strained Layer Heterostructures at Elevated Temperature
Nuclear Instruments and Methods in Physics Research: Section B B148() 206-210
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Preferential Amorphization at Extended Defects of Self-Ion-Irradiated-Silicon
Physical Review Letters 82, 4() 771-774
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Non-Linearities and Entrance Window Effects in Large Solid-Angle Gas Ionization Detectors
Nuclear Instruments and Methods in Physics Research: Section A 423() 381-393
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Window Effects in a Large Solid Angle, Position-Sensitive Gas Ionisation Detector for Elastic Recoil Detection Analysis (ERDA)
Nuclear Instruments and Methods in Physics Research: Section A A423() 381-393
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Structural analysis of a carbon foam formed by high pulse-rate laser ablation
Applied Physics A: Materials Science and Processing 69 Supplement() S755 - S758
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Improved designs of gas ionization detectors used for elastic recoil detection
Nuclear Instruments and Methods in Physics Research: Section B B 156() 236-243

Characterization of thin films using heavy ion beams
Bulletin of Materials Science 22, 3() 601-606
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Ion irradiation of GeSi/Si strained-layer heterostructures
Materials Research Society Symposium Proceedings 540() 55-65

The development of a facility for heavy-ion elastic recoil detection analysis at the Australian National University
Nuclear Instruments and Methods in Physics Research: Section B 136-138() 611-615

Limitations to depth resolution in high-energy, heavy-ion elastic recoil detection analysis
Nuclear Instruments and Methods in Physics Research: Section B 136-138() 649-653

Conference paper

( publications)

, , , , ,
Elimination and quantification of oxidation induced interstitial injection via Ge implants
Processes at the Semiconductor Solution Interface 7, PSSI 2017 - 231st ECS Meeting 2017 ?, ?() 135-143
, , , ,
Temperature Dependence of Threshold Switching in NbOx Thin Films
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 138-140
, , , , ,
Finite Element Modeling of Resistive Switching in Nb2O5-based Memory Device
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 280-283
, , , , ,
Resistive Switching Behavior in HfO2 with Nb as an Oxygen Exchange Layer
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 290-294
, , ,
Ion implanted dielectric films for an improved optical and electronic silicon photovoltaic response
2012 MRS Fall Meeting 1493() 105-110
, , , , ,
Resistive Switching on High-K dielectircs for Non-volatile Memory Applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 121-122
, , , , ,
Strain Relaxation behaviour in Germanium-on-insulator fabricated by Ion Implantation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 167-168
, , ,
Magnetic properties of Co, Ni, Pt and their alloy nanoparticles formed in SiO2 by ion beam synthesis
17th International Conference on Ion Beam Modification of Materials (IBMM 2010) 272() 70-73
, ,
Activation energy and blistering rate in hydrogen-implanted semiconductors
Materials Research Society Fall Meeting 2011 1424() 79-84
, , ,
Optical imaging of graphene using phase shift interferometry
Australian Institute of Physics Congress (AIP 2012) ?, ?() 1
, , ,
Germanium-on-Insulator Fabricated by Ion Implantation and Dry Oxidation Technique
IEEE Conference on Nanotechnology (IEEE-NANO 2011) ?, ?() 1668 - 1672
, , , , ,
Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films
Conference on Lasers and Electro-Optics (CLEO 2011) ?, ?() 1612-1616
, , , , ,
Strain Relaxation in Germanium-on-Insulator fabricated by a modified Germanium Condensation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 155 to 156
, , , , ,
Effect of Ion-implantation on Forming and Resistive-Switching Response of NiO Thin films
Materials Research Society Meeting Spring 2010 1250() 1-6
, , , , , , ,
Resistance switching in polycrystalline NiOx thin film
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 223-224
, ,
The Fabrication of Optically Active Silica Nanowires by Ion-Implantation
AINSE Conference on Nuclear and Complementary Techniques of Analysis (NCTA 2009) ?, ?() 4
, ,
Controlled lateral growth of silica nanowire
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 59-60
, , , ,
Ion beam synthesis of metallic nanoparticles in SiO_2 thin films
AINSE Conference on Nuclear and Complementary Techniques of Analysis (NCTA 2009) ?, ?() 4
, , , , ,
Co and Co-Pt Nanoparticles Formed in Silica by Ion Implantation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 173-174
, , , ,
Bistable Resistive Switching in Hafnium-Silicate Thin Films
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 185-186
, ,
Hydrogen blister depth and surfcce roughness during the ion-cut process
AINSE Conference on Nuclear and Complementary Techniques of Analysis (NCTA 2009) ?, ?() 5
, ,
Hydrogen Platelet Evolution in Mechanically Strained Silicon
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 181-182
, , ,
Formation of ordered arrays of gold particles on silicon and silicon-dioxide by nanoindentation patterning
Materials Research Society Meeting Fall 2009 1228() 6
, , , ,
The effect of ion-implantation on the resistive switching response of NiO thin films
AINSE Conference on Nuclear and Complementary Techniques of Analysis (NCTA 2009) ?, ?() 4
,
Hierarchal silica nanowire growth via single step annealing
International Conference on Nanoscience and Nanotechnology (ICONN 2010) ?, ?() 203-206
, ,
The Properties of Silica and Hybrid Nanostructures
Materials Research Society Meeting Spring 2010 1256() 1256-N11-61
, , , ,
Titania Coated Silica Nanowires
Materials Research Society Meeting Fall 2009 1206() 1206
, , , ,
Size controlled growth of silica nanowires by thermal decomposition of thin gold films on silicon
International Conference on Nanoscience and Nanotechnology (ICONN 2010) ?, ?() 210-213
, , ,
The Growth of Self-assembled Au Nanostructures during the Epitaxial Crystallization of Au-Implanted Amorphous Silicon Layers
Australian Conference on Nuclear and Complementary Techniques of Analysis & Vacuum Society of Australia Congress 2009 ?, ?() 4
, , , , ,
Blue-Light Emission from Crystalline Si/silica Core/Shell Nanowires
2008 IEEE 5th International Conference on Group IV Photonics, GFP ?, ?() 90-92
, ,
The effect of annealing temperature on the optical properties of sputter-deposited hafnium oxide thin films
Australian Conference on Nuclear and Complementary Techniques of Analysis & Vacuum Society of Australia Congress 2007 ?, ?() 330-333
, , ,
Photonic nanostructures and their influence on Er luminescence
Australian Conference on Nuclear and Complementary Techniques of Analysis & Vacuum Society of Australia Congress 2007 ?, ?() 81-84
, ,
The synthesis and structure of silica nanowires
Australian Conference on Nuclear and Complementary Techniques of Analysis & Vacuum Society of Australia Congress 2007 ?, ?() 224-227
, ,
Thermal stability of sputter deposited hafnium oxide films
Australian Conference on Nuclear and Complementary Techniques of Analysis & Vacuum Society of Australia Congress 2007 ?, ?()
, , ,
Surface Fraction Statistics of Gold Nanoclusters of Dissimilar Sizes Determined by RBS
Australian Conference on Nuclear and Complementary Techniques of Analysis & Vacuum Society of Australia Congress 2007 ?, ?()
, , ,
Surface Modification of Silicon Nano Mechanical Structures by Carbon Ion Implantation for Post-fabrication Transformation to Silicon Carbide
Materials Research Society Meeting Fall 2005 908() 0908-OO16-03.1-6
, ,
Nanoindentation of Si Nanocrystals in SiO2
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) ?, ?() 335-337
, , , ,
Pump-probe Measurements using Silicon Nanocrystal Waveguides
Materials Research Society Meeting Spring 2003 ?, ?() 63-68
, ,
Effect of Microcavity Structures on the Photoluminescence of Silicon Nanocrystals
Materials Research Society Meeting Spring 2003 ?, ?() 51-56
,
Hydrogen Passivation Kinetics of Si Nanocrystals in SiO2
Materials Research Society Meeting Spring 2003 770() 81-86
, , , , ,
Production and Processing of Semiconductor Nanocrystals and Nanostructures for Photonic Applications
National Conference and Exhibition on Nanotechnology 2003 ?, ?() 74-80
, , , ,
Cluster-assembled amorphous carbon nano-foam synthesised by high-pulse-rate laser ablation
International Winterschool/Euroconference on Electronic Properties of Novel Materials ?, ?() 512

Journal short contribution

( publications)

, , , , ,
Modification, synthesis, and analysis of advanced materials using ion beam techniques
Advances in Material Science and Engineering 2012()
, , , , ,
Fabrication of Ge On Insulator By Ion-Implantation And Dry Oxidation Techniques
Microscopy and Microanalysis 18, S2() 1634-1635

Journal article (non-refereed)

( publications)

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Manufacturing gold nano-jewellery
Australian Physics 46, 4() 114-115