Available student project - Exploring the nature of deep levels in high performance ZnO Schottky diodes

Research fields

  • Materials Science and Engineering
  • Engineering in Physics

Project details

ZnO is a promising wide bandgap semiconductor for optoelectronic applications in blue lasers and LEDs. In this project, high performance Schottky diodes are fabricated on ZnO in a collaboration with the University of Canterbury (New Zealand) will be used as test structures for studies related to deep levels in ZnO. Ion implantation will be used to selectively introduce minute amounts of point defects and understand their nature. Deep level transient spectroscopy (DLTS) will be carried out to identify electrical active point defects and the nature and origin of these defects. Additional electrical characterisation techniques such as thermal admittance spectroscopy (TAS) and variable field and variable temperature Hall effect measurements will also used wherever suitable.

Required background

Semiconductor basics

Project suitability

This research project can be tailored to suit students of the following type(s)
  • 3rd year special project
  • PhB (2nd or 3rd year)
  • Honours project

Contact supervisor

Wong-Leung, Jennifer profile
Senior Fellow

Updated:  15 January 2019/ Responsible Officer:  Director, RSPE/ Page Contact:  Physics Webmaster