During the past two decades, III-V semiconductor nanowires have attracted significant research interest in the optoelectronic field due to their superior material properties, very compact size, and ability to grow directly on lattice-mismatched substrates including silicon. To date, III-V nanowires have been used as building blocks for a broad range of optoelectronic devices including transistors, solar cells, lasers, photodetectors and light-emitting diodes. Amongst III-V nanowires, ternary alloys such as InGaAs allow tuning of the bandgap as a function of ally composition. To effectively incorporate InGaAs nanowire into devices is essential to understand the role of growth parameters and pattern geometry on their morphology, composition and crystal structure. However, despite progress, it remains challenging to control the nanowires alloy composition and structure. This hinders their practical applications due to the difficulties in achieving consistent high-performance by scalable fabrication approaches. In this talk, I will first discern the role of twin defects and side facets on the optical properties of GaAs nanowires. Thereafter, I will present the scalable growth of highly uniform InGaAs nanowire arrays in a wide range of compositions. I will conclude by presenting the enhancement of InGaAs nanowires optical properties through an InP passivation shell. These passivated InGaAs nanowires with tunable band gap and enhanced optical properties have potential for efficient nanowire-based devices for near infra-red applications.
Meeting ID: 890 1569 3439