In(Ga)As(P)/InP quantum well (QW) structures have been widely used in modern semiconductor industry for telecommunication, integrated photonics and photovoltaics applications. Incorporation of In(Ga)As(P)/InP QWs into nanowires could offer advantages of small footprint and effective strain relaxation for epitaxial growth on lattice mismatched substrates such as Si for CMOS integrations. In this PhD thesis, we systematically investigated In(Ga)As(P)/InP QWs growth based on InP nanowires through crystal structure and facet engineering, and demonstrated high quality QW nanowires for optically pumped lasing, LEDs and photodetectors applications.

In this presentation, I will firstly present controlled selective-area epitaxial growth of InP nanowires with different crystal structures and sidewall facets on InP (111)A substrates. Based on the {1                    00} faceted wurtzite InP nanowires, InAsP/InP single QW nanowires are demonstrated with different morphologies and thus different QW profiles by carefully optimisation of the growth parameters. On the other hand, through developing growth of {110} faceted polytypic InP nanowires, highly uniform InGaAs/InP QW nanowires with up to 40 QWs have been achieved with excellent optical properties. Based on the high quality QW nanowires, we have successfully demonstrated low-threshold optically pumped single nanowire lasing at 1.3 – 1.6 µm, high-speed (1 GHz) multi-wavelength nanowire array LEDs and high-responsivity nanowire array near-infrared photodetectors, paving way for future on-chip communications and next generation Li-Fi applications. 

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