Departmental Seminar

Growth of AlGaN nanostructure by MOCVD

Mr Sonachand Adhikari

III-Nitrides have come a long way in the past few decades and have become the material of choice for light emitting diodes (LEDs), high electron mobility transistors (HEMTs) etc. However, research of the one-dimensional nanostructures of III-nitride is relatively in the nascent stage. Specially the growth of AlGaN nanostructure has long been, and still a bottleneck. Nonetheless, such nanostructures have huge potentials for applications in lighting, HEMTs, photodetectors, sensors etc.

We have investigated the growth of AlGaN and GaN nanowires through selective area growth (SAG) using metal organic chemical vapour deposition (MOCVD). Various growth parameters, which include V/III ratio, flow rates of Ga and N sources, temperature, pressure etc. have been investigated to understand the effects of these parameters and provide an insight into the growth mechanism of such nanowires.

The progress we have made, issues we have resolved, present challenges and future plans will be discussed in this Mid-Term Seminar.

Zoom event :

Password : 556113

Updated:  23 September 2021/ Responsible Officer:  Director, RSPhys/ Page Contact:  Physics Webmaster