The efficiency of light-emitting diodes (LEDs) in the green–yellow spectral range remains limited by the well-known “green gap,” where device performance drops sharply compared to blue and red emitters. Closing this gap is essential not only for high-efficiency solid-state lighting but also for achieving high color rendering and “true” white displays based on the full RGB spectrum—capabilities critical for next-generation lighting, microdisplays, and imaging technologies.

This project explores a new route to green emission by engineering the crystal phase of GaP and AlInP nanostructures. By transforming these materials from their conventional cubic zinc blende structure to the hexagonal wurtzite phase, they can be converted from indirect to direct bandgap semiconductors, enabling strong radiative recombination in the green region.

A promising pathway is the crystal structure transfer method, where nanostructures grown along specific crystallographic directions preserve the wurtzite phase of a core template. This strategy effectively “transfers” the crystal phase, offering a scalable route to efficient green LEDs.