Germanium–tin (GeSn) alloys have recently emerged as a promising material system for infrared photodetectors due to their tunable direct bandgap and compatibility with silicon technology. This project focuses on the growth and characterisation of GeSn thin films to evaluate their suitability for photodetector applications. Structural, optical, and electrical properties of the films will be systematically investigated using techniques such as X-ray diffraction, Raman spectroscopy, Rutherford backscattering spectrometry, and implantation, followed by electrical measurements such as Hall effect. The findings will provide insights into the relationship between film quality, Sn composition, and device-relevant performance metrics, guiding the development of high-efficiency GeSn-based photodetectors.

Knowledge of solid state pahysics (equivalent to PHYS3032) including crystal structures, semiconductor bandgaps.