Emeritus Professor Jim Williams

Emeritus Professor Jim Williams
Position
 Emeritus Professor
Department
 Materials Physics
Qualifications
 BSc PhD NSW, FAA, FTSE, FAIP, FIEAust
Office phone
 50373
Email
Office
 John Carver 4 13

Research publications

Book chapter

Yang W, Lim S, Williams J
Optical hyperdoping
"Laser Annealing Processes in Semiconductor Technology:Theory, Modeling and Applications in Nanoelectronics"
Woodhead Publishing Ltd, UK (2021) 323-356
Williams J
Damage Formation, Amorphization and Crystallization in Semiconductors at Elevated Temperatures
Ion Beam Modification of Solids
Springer International Publishing Switzerland, Switzerland (2016) 243-285
Mangalampalli K, Haberl B, Bradby J, Williams J
Nanoindentation of Silicon and Germanium
Semiconductors and Semimetals: Defects in Semiconductors
Elsevier Inc., Burlington (2015) 165-203
Rapp L, Haberl B, Bradby J, Gamaly E, Williams J, Rode A
Ultrafast Laser Induced Confined Microexplosion: A New Route to Form Super-Dense Material Phases
Fundamentals of Laser-Assisted Micro- and Nanotechnologies
Springer International Publishing AG, Berlin (2014) 3-26
Williams J, Wong-Leung J
Voids and Nanocavities in Silicon
Topics in Applied Physics 116: Materials Science with Ion Beams
Springer, Berlin (2010) 113-146
Williams J, De Medeiros Azevedo G, Bernas H, Fortuna F
Ion-Beam-Induced Amorphization and Epitaxial Crystallization of Silicon
Topics in Applied Physics 116: Materials Science with Ion Beams
Springer, Berlin (2010) 73-111
Chen Y, Williams J
Synthesis of Boron Nitride Nanotubes Using a Ball-Milling and Annealing Method
Nanoengineering of Structural, Functional, and Smart Materials
CRC Press LLC, Boca Raton USA (2006) 169-195

Journal article

Lim S, Warrender J, Notthoff C, Ratcliff T, Williams J, Johnson B
Room temperature electrical characteristics of gold-hyperdoped silicon
Journal of Applied Physics 135, 9()
Dissanayake S, Chow P, Lim S, Yang W, Flutak R, Williams J, Warrender J, Sher M
Impact of ion implantation and laser processing parameters on carrier lifetimes in gold-hyperdoped silicon
Semiconductor Science and Technology 38, 2()
Lim S, Huston L, Smillie L, Grzybowski G, Huang X, Williams J, Claflin B
Remote plasma-enhanced chemical vapor deposition of GeSn on Si: Material and defect characterization
Journal of Applied Physics 133, 23()
Tran T, Wong-Leung J, Smillie L, Hallen A, Grimaldi M, Williams J
High hole mobility and non-localized states in amorphous germanium
APL Materials 11, 4()
Chow P, Lim S, Williams J, Warrender J
Sub-bandgap photoresponse and leakage current analysis in gold thin film-hyperdoped silicon photodiodes
Semiconductor Science and Technology 37, 12() 1-7
Dissanayake S, Pallatt N, Chow P, Lim S, Liu Y, Yue Q, Fiutak R, Matthews J, Williams J, Warrender J, Sher M
Carrier lifetimes in gold-hyperdoped silicon - Influence of dopant incorporation methods and concentration profiles
APL Materials 10, 11() 111106
Hudspeth Q, Altweger M, Chow P, Sher M, Dissanayake S, Yang W, Maurer J, Lim S, Williams J, Efsthadiadis H, Warrender J
Cellular breakdown and carrier lifetimes in gold-hyperdoped silicon
Semiconductor Science and Technology 37, 12() 1-8
Dissanayake S, Ferdous N, Gandhi H, Pastor D, Tran T, Williams J, Aziz M, Mazur E, Sher M
Carrier Dynamics and Absorption Properties of Gold-Hyperdoped Germanium: Insight into Tailoring Defect Energetics
Physical Review Applied 15, 6()
Huston L, Lugstein A, Shen G, Cullen D, Haberl B, Williams J, Bradby J
Synthesis of Novel Phases in Si Nanowires Using Diamond Anvil Cells at High Pressures and Temperatures
Nano Letters 21, 3() 1427-1433
Lim S, Akey A, Napolitani E, Chow P, Warrender J, Williams J
A critical evaluation of Ag- and Ti-hyperdoped Si for Si-based infrared light detection
Journal of Applied Physics 129, 6()
Gandhi H, Pastor D, Tran T, Kalchmair S, Smillie L, Mailoa J, Milazzo R, Napolitani E, Loncar M, Williams J, Aziz M, Mazur E
Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection
AIP Advances 10, 7()
Gandhi H, Pastor D, Tran T, Kalchmair S, Smillie L, Mailoa J, Milazzo R, Napolitani E, Loncar M, Williams J, Aziz M, Mazur E
Gold-Hyperdoped Germanium with Room-Temperature Sub-Band-Gap Optoelectronic Response
Physical Review Applied 14, 6() 1-11
Lim S, Lew C, Chow P, Warrender J, Williams J, Johnson B
Toward understanding and optimizing Au-hyperdoped Si infrared photodetectors
APL Materials 8, 6() 1-5
Smillie L, Niihori M, Rapp L, Haberl B, Williams J, Bradby J, Pickard C, Rode A
Exotic silicon phases synthesized through ultrashort laser-induced microexplosion: Characterization with Raman microspectroscopy
Physical Review Materials 4, 9() 1-8
Tran T, Hudspeth Q, Liu Y, Smillie L, Wang B, Bruce R, Mathews J, Warrender J, Williams J
Ion beam synthesis and photoluminescence study of supersaturated fully-relaxed Ge-Sn alloys
Materials Science and Engineering B 262, 114702()
Lim S, Lew C, Chow P, Warrender J, Williams J, Johnson B
Process-induced defects in Au-hyperdoped Si photodiodes
Journal of Applied Physics 126, 22() 1-9
Tran P, Mathews J, Williams J
Towards a direct band gap group IV Ge-based material
Materials Science in Semiconductor Processing 92() 39-46
Wong S, Haberl B, Johnson B, Mujica Fernaud A, Guthrie M, McCallum J, Williams J, Bradby J
Formation of an r8-Dominant Si Material
Physical Review Letters 122, 10() 1-6
Wong S, Johnson B, Haberl B, Mujica Fernaud A, McCallum J, Williams J, Bradby J
Thermal evolution of the indentation-induced phases of silicon
Journal of Applied Physics 126, 10() 1-9
Yang W, Ferdous N, Simpson P, Gaudet J, Hudspeth Q, Chow P, Warrender J, Akey A, Aziz M, Ertekin E, Williams J
Evidence for vacancy trapping in Au-hyperdoped Si following pulsed laser melting
APL Materials 7, 10()
Yang W, Hudspeth Q, Chow P, Warrender J, Ferdous N, Ertekin E, Malladi G, Akey A, Aziz M, Williams J
Atomistic Mechanisms for the Thermal Relaxation of Au -hyperdoped Si
Physical Review Applied 12, 2()
Chow P, Yang W, Hudspeth Q, Lim S, Williams J, Warrender J
Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films
Journal of Applied Physics 123, 13() 1-8
Huston L, Lugstein A, Williams J, Bradby J
The high pressure phase transformation behavior of silicon nanowires
Applied Physics Letters 113, 12() 5
Alkhaldi H, Kluth P, Kremer F, Lysevych M, Li L, Ridgway M, Williams J
Void evolution and porosity under arsenic ion irradiation in GaAs1-xSbx alloys
Journal of Physics D: Applied Physics 50, 12() 125101-125108
Huston L, Johnson B, Haberl B, Wong S, Williams J, Bradby J
Thermal stability of simple tetragonal and hexagonal diamond germanium
Journal of Applied Physics 122, 17() 1-7
Huston L, Mangalampalli K, Smillie L, Williams J, Bradby J
Cold nanoindentation of germanium
Applied Physics Letters 111, 2() 021901 1-4
Tran P, Gandhi H, Pastor D, Aziz M, Williams J
Ion-beam synthesis and thermal stability of highly tin-concentrated germanium - tin alloys
Materials Science in Semiconductor Processing 62() 192-195
Wong S, Haberl B, Williams J, Bradby J
Phase Transformation Dependence on Initial Plastic Deformation Mode in Si via Nanoindentation
Experimental Mechanics 57, 7() 1037-1043
Yang W, Akey A, Smillie L, Mailoa J, Johnson B, McCallum J, MacDonald D, Buonassisi T, Aziz M, Williams J
Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si
Physical Review Materials 1, 7() 10
Yang W, Mathews J, Williams J
Hyperdoping of Si by ion implantation and pulsed laser melting
Materials Science in Semiconductor Processing 62() 103-114
Alkhaldi H, Kremer F, Bierschenk T, Hansen J, Nylandsted-Larsen A, Williams J, Ridgway M
Porosity as a function of stoichiometry and implantation temperature in Ge/Si1?xGex alloys
Journal of Applied Physics 119, 9()
Alkhaldi H, Tran T, Kremer F, Williams J
The influence of capping layers on pore formation in Ge during ion implantation
Journal of Applied Physics 120, 21() 1-10
Holmström E, Haberl B, Pakarinen O, Nordlund K, Djurabekova F, Arenal R, Williams J, Bradby J, Petersen T, Liu A
Dependence of short and intermediate-range order on preparation in experimental and modeled pure a-Si
Journal of Non-crystalline Solids 438() 26-36
Tran P, Alkhaldi H, Gandhi H, Pastor D, Huston L, Wong-Leung J, Aziz M, Williams J
Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer
Applied Physics Letters 109, 8()
Tran P, Pastor D, Gandhi H, Smillie L, Akey A, Aziz M, Williams J
Synthesis of Ge1?xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material
Journal of Applied Physics 119, 18() 183102
Akey A, Recht D, Williams J, Aziz M, Buonassisi T
Single-Phase Filamentary Cellular Breakdown Via Laser-Induced Solute Segregation
Advanced Functional Materials 25, 29() 4642-4649
Elliman R, Williams J
Advances in ion beam modification of semiconductors
Current Opinion in Solid State and Materials Science 19, 1() 49-67
Haberl B, Guthrie M, Sinogeikin S, Shen G, Williams J, Bradby J
Thermal evolution of the metastable r8 and bc8 polymorphsofsilicon
High Pressure Research 35, 2() 99-116
Mangalampalli K, Tran T, Smillie L, Haberl B, Subianto D, Williams J, Bradby J
Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation
Journal of Applied Physics 117, 20() 1-9
Rapp L, Haberl B, Pickard C, Bradby J, Gamaly E, Williams J, Rode A
Experimental evidence of new tetragonal polymorphs of silicon formed through ultrafast laser-induced confined microexplosion
Nature Communications 6, 7555() 10
Verburg P, Smillie L, Romer G, Haberl B, Bradby J, Williams J, Veld A
Crystal structure of laser-induced subsurface modifications in Si
Applied Physics A: Materials Science and Processing 120, 2() 683-691
Wong S, Haberl B, Williams J, Bradby J
The influence of hold time on the onset of plastic deformation in silicon
Journal of Applied Physics 118, 24()
Wong S, Haberl B, Williams J, Bradby J
Phase transformation as the single-mode mechanical deformation of silicon
Applied Physics Letters 106, 25() 1-4
Deshmukh S, Haberl B, Ruffell S, Munroe P, Williams J, Bradby J
Phase transformation pathways in amorphous germanium under indentation pressure
Journal of Applied Physics 115, 15() 153502/1-10
Haberl B, Guthrie M, Malone B, Smith J, Sinogeikin S, Cohen M, Williams J, Shen G, Bradby J
Controlled formation of metastable germanium polymorphs
Physical Review B 89, 14() 1-6
Mailoa J, Akey A, Simmons C, Hutchinson D, Mathews J, Sullivan J, Recht D, Winkler M, Williams J, Warrender J, Persans P, Aziz M, Buonassisi T
Room-temperature sub-band gap optoelectronic response of hyperdoped silicon
Nature Communications 5, 3011() 1-8
Mangalampalli K, Haberl B, Williams J, Bradby J
Temperature dependent deformation mechanisms in pure amorphous silicon
Journal of Applied Physics 115, 11() 1-10
Rapp L, Haberl B, Bradby J, Gamaly E, Williams J, Rode A
Confined micro-explosion induced by ultrashort laser pulse at SiO2/Si interface
Applied Physics A: Materials Science and Processing 114, 1() 33-43
Sprouster D, Ruffell S, Bradby J, Stauffer D, Major R, Warren O, Williams J
Quantitative electromechanical characterization of materials using conductive ceramic tips
Acta Materialia 71() 153-163
Bayu Aji L, Ruffell S, Haberl B, Bradby J, Williams J
Correlation of indentation-induced phase transformations with the degree of relaxation of ion-implanted amorphous silicon
Journal of Materials Research 28, 8() 1056-1060
Bradby J, Williams J, Haberl B, Deshmukh S, Johnson B, Malone B, Cohen M
Hexagonal germanium formed via a pressure-induced phase transformation of amorphous germanium under controlled nanoindentation
Physica Status Solidi: Rapid Research Letters 7, 5() 355-359
Haberl B, Guthrie M, Sprouster D, Williams J, Bradby J
New insight into pressure-induced phase transitions of amorphous silicon: the role of impurities
Journal of Applied Crystallography 46, 3() 758-768
Johnson B, Haberl B, Deshmukh S, Malone B, Cohen M, McCallum J, Williams J, Bradby J
Evidence for the R8 phase of germanium
Physical Review Letters 110, 8() 1-5
Recht D, Smith M, Charnvanichborikarn S, Sullivan J, Winkler M, Mathews J, Warrender J, Buonassisi T, Williams J, Grade?ak S, Aziz M
Supersaturating silicon with transition metals by ion implantation and pulsed laser melting
Journal of Applied Physics 114, 12()
Umezu I, Warrender J, Charnvanichborikarn S, Kohno A, Williams J, Tabbal M, Papazoglou D, Zhang X, Aziz M
Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens
Journal of Applied Physics 113, 21() 213501
Williams J
Ion beams and channelling: The early days with Jak Kelly
Journal and Proceedings of the Royal Society of New South Wales 146, 449-450() 110-115
Bhuyan S, Bradby J, Ruffell S, Haberl B, Saint C, Williams J, Munroe P
Phase stability of silicon during indentation at elevated temperature: evidence for a direct transformation from metallic Si-II to diamond cubic Si-I
MRS Communications 2, 1() 9-12
Borisenko K, Haberl B, Liu A, Chen Y, Li G, Williams J, Bradby J, Cockayne D, Treacy M
Medium-range order in amorphous silicon investigated by constrained structural relaxation of two-body and four-body electron diffraction data
Acta Materialia 60, 1() 359-375
Charnvanichborikarn S, Wong-Leung J, Jagadish C, Williams J
Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon
MRS Communications 2, 3() 101-105
Haberl B, Bayu Aji L, Williams J, Bradby J
The indentation hardness of silicon measured by instrumented indentation: What does it mean?
Journal of Materials Research 27, 24() 3066-3072
Johnson B, Villis B, Burgess J, Stavrias N, McCallum J, Charnvanichborikarn S, Wong-Leung J, Jagadish C, Williams J
Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
Journal of Applied Physics 111, 9() 094910/1-8
Persans P, Berry N, Recht D, Hutchinson D, Peterson H, Clark J, Charnvanichborikarn S, Williams J, Di Franzo A, Aziz M, Warrender J
Photocarrier lifetime and transport in silicon supersaturated with sulfur
Applied Physics Letters 101, 11()
Haberl B, Boyle S, Li T, McKerracher I, Ruffell S, Munroe P, Williams J, Abelson J, Bradby J
Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing
Journal of Applied Physics 110, 9() 1-3
Johnson B, Haberl B, Bradby J, McCallum J, Williams J
Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation
Physical Review B: Condensed Matter and Materials 83, 23() 235205-1 - 235205-8
McCallum J, Villis B, Johnson B, Stavrias N, Burgess J, Charnvanichborikarn S, Wong-Leung J, Williams J, Jagadish C
Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon
Physica Status Solidi A 208, 3() 620-623
Pan S, Recht D, Charnvanichborikarn S, Williams J, Aziz M
Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens
Applied Physics Letters 98, 12() 121913
Ruffell S, Knights A, Bradby J, Williams J
Impurity-free seeded crystallization of amorphous silicon by nanoindentation
Journal of Applied Physics 110, 8() 083707-4
Ruffell S, Sears K, Bradby J, Williams J
Room temperature writing of electrically conductive and insulating zones in silicon by nanoindentation
Applied Physics Letters 98, 5() 052105
Ruffell S, Sears K, Knights A, Bradby J, Williams J
Experimental evidence for semiconducting behavior of Si-XII
Physical Review B: Condensed Matter and Materials 83, 7() 075316
Sprouster D, Ruffell S, Bradby J, Williams J, Lockrey M, Phillips M, Major R, Warren O
Structural characterization of B-doped diamond nanoindentation tips
Journal of Materials Research 26, 24() 3051-3057
Bob B, Kohno A, Charnvanichborikarn S, Warrender J, Umezu I, Tabbal M, Williams J, Aziz M
Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting
Journal of Applied Physics 107, 12() 1-5
Charnvanichborikarn S, Villis B, Johnson B, Wong-Leung J, McCallum J, Williams J, Jagadish C
Effect of boron on interstitial-related luminescence centers in silicon
Applied Physics Letters 96, 5() 051906
Charnvanichborikarn S, Conway M, Wong-Leung J, Williams J
Achieving a narrow size distribution of Au particles at a precise depth in SiO2 by segregation of Au precipitates
Nanotechnology 20, 18() 6
Charnvanichborikarn S, Wong-Leung J, Williams J
Self-assembled Au nanoparticles in SiO2 by ion implantation and wet oxidation
Journal of Applied Physics 106, 10() 103526/1-8
Fujisawa N, Ruffell S, Bradby J, Williams J, Haberl B, Warren O
Understanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions
Journal of Applied Physics 105, 106111() 1-3
Haberl B, Liu A, Bradby J, Ruffell S, Williams J, Munroe P
Structural characterization of pressure-induced amorphous silicon
Physical Review B: Condensed Matter and Materials 79, 155209() 1-8
Oliver D, Bradby J, Ruffell S, Williams J, Munroe P
Nanoindentation-induced phase transformation in relaxed and unrelaxed ion-implanted amorphous germanium
Journal of Applied Physics 106, 0935509() 1-6
Oliver D, Bradby J, Williams J, Swain M, Munroe P
Rate-dependent phase transformations in nanoindented germanium
Journal of Applied Physics 105, 12() 1-4
Oliver D, Ruffell S, Bradby J, Williams J, Swain M, Munroe P, Simpson P
Nanoindentation of ion-implanted crystalline germanium
Physical Review B: Condensed Matter and Materials 80, 115210() 1-8
Ruffell S, Bradby J, Williams J, Munoz-Paniagua D, Tadayyon S, Coatsworth L, Norton P
Nanoindentation-induced phase transformations in silicon at elevated temperatures
Nanotechnology 20, 135603() 1-5
Ruffell S, Haberl B, Koenig S, Bradby J, Williams J
Annealing of nanoindentation-induced high pressure crystalline phases created in crystalline and amorphous silicon
Journal of Applied Physics 105, 093513() 1-8
Ruffell S, Vedi J, Bradby J, Williams J, Haberl B
Effect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous silicon
Journal of Applied Physics 105, 083520() 1-6
Ruffell S, Vedi J, Bradby J, Williams J
Effect of hydrogen on nanoindentation-induced phase transformations in amorphous silicon
Journal of Applied Physics 106, 123511() 1-6
Chen H, Chen Y, Liu Y, Zhang H, Li C, Liu Z, Ringer S, Williams J
Rare-earth doped boron nitride nanotubes
Materials Science and Engineering B 146, 1-3() 189-192
Chen H, Zhang H, Chen Y, Liu Y, Li C, Williams J
Cathodoluminescence of Boron Nitride Nanotubes Doped by Europium
Journal of the Australian Ceramics Society 44, 2() 68-70
Chen H, Zhang H, Fu L, Chen Y, Williams J, Yu C, Yu D
Nano Au-decorated boron nitride nanotubes: Conductance modification and field-emission enhancement
Applied Physics Letters 92, 243105() 1-3
Fujisawa N, Keikotlhaile R, Bradby J, Williams J
Indentation-induced phase transformations in silicon as a function of history of unloading
Journal of Materials Research 23, 10() 2645-2649
Oliver D, Bradby J, Williams J, Swain M, Munroe P
Thickness-dependent phase transformation in nanoindented germanium thin films
Nanotechnology 19, 475709() 1-8
Oliver D, Lawn B, Cook R, Reitsma M, Bradby J, Williams J, Munroe P
Giant pop-ins in nanoindented silicon and germanium caused by lateral cracking
Journal of Materials Research 23, 2() 297-300
Ruffell S, Bradby J, Williams J, Major R, Warren O
In-situ electrical probing of zones of nanoindentation-induced phases of silicon
Materials Research Society Symposium Proceedings 1146() 1-6
Bao J, Tabbal M, Kim T, Charnvanichborikarn S, Williams J, Aziz M, Capasso F
Point defect engineered Si sub-bandgap light-emitting diode
Optics Express 15, 11() 6727-6733
Chen H, Chen Y, Li C, Zhang H, Williams J, Liu Y, Liu Z, Ringer S
Eu-doped Boron Nitride Nanotubes as a Nanometer-Sized Visible-Light Source
Advanced Materials 19, 14() 1845-1848
Chen H, Chen Y, Liu Y, Xu C, Williams J
Light emission and excitonic effect of boron nitride nanotubes observed by photoluminescent spectra
Optical Materials 29, 11() 1295-1298
Chen Y, Chen H, Yu J, Williams J, Craig V
Focused ion beam milling as a universal template technique for patterned growth of carbon nanotubes
Applied Physics Letters 90, 093126() 1-3
Fujisawa N, Williams J, Swain M
On the cyclic indentation behavior of crystalline silicon with a sharp tip
Journal of Materials Research 22, 11() 2992-2997
Oliver D, Bradby J, Williams J, Swain M, Munroe P
Giant pop-ins and amorphization in germanium during indentation
Journal of Applied Physics 101() 043524 1-9
Rao R, Bradby J, Williams J
Patterning of silicon by indentation and chemical etching
Applied Physics Letters 91() 123113 1-3
Rao R, Bradby J, Ruffell S, Williams J
Nanoindentation-induced phase transformation in crystalline silicon and relaxed amorphous silicon
Microelectronics Journal 38() 722-726
Ruffell S, Bradby J, Williams J
Annealing kinetics of nanoindentation-induced polycrystalline high pressure phases in crystalline silicon
Applied Physics Letters 90() 131901 1-3
Ruffell S, Bradby J, Fujisawa N, Williams J
Indentification of nanoindentation-induced phase changes in silicon by in situ electrical characterization
Journal of Applied Physics 101() 083531 1-7
Ruffell S, Bradby J, Williams J, Warren O
An in situ electrical measurement technique via a conducting diamond tip for nanoindentation in silicon
Journal of Materials Research 22, 3() 578-586
Ruffell S, Bradby J, Williams J, Munroe P
Formation and growth of nanoindentation-induced high pressure phases in crystalline and amorphous silicon
Journal of Applied Physics 102() 063521 1-8
Chen H, Chen Y, Yu J, Williams J
Purification of Boron Nitride Nanotubes
Chemical Physics Letters 425() 315-319
Haberl B, Bradby J, Ruffell S, Williams J, Munroe P
Phase Transformations Induced by Spherical Indentation in Ion-implanted Amorphous Silicon
Journal of Applied Physics 100, 1() 013520-1-9
Ruffell S, Bradby J, Williams J
High Pressure Crystalline Phase Formation during Nanoindentation: Amorphous versus Crystalline Silicon
Applied Physics Letters 89, 9() 091919-1-3
ARIES T, Williams J, Conway M, Wong-Leung J
Nanocavities and nanoparticles formed in silicon by ion irradiation
Journal of Environmental Chemical Engineering 70, 6() 881-884
Kinomura A, Horino Y, Nakano Y, Williams J
Gettering of Copper to Hydrogen-induced Cavities in Multicrystalline Silicon
Journal of Applied Physics 98, 6() 066102-1-3
Williams J, Kucheyev S, Tan H, Wong-Leung J, Jagadish C
Ion Irradiation-induced Disordering of Semiconductors: Defect Structures and Applications
Philosophical Magazine 85, 4-7() 677-687
Bradby J, Williams J, Swain M
Pop-In Events Induced by Spherical Indentation in Compound Semiconductors
Journal of Materials Research 19, 1() 380-386
Chen Y, Conway M, Fitzgerald J, Williams J, Chadderton L
The Nucleation and Growth of Carbon Nanotubes in a Mechano-Thermal Process
Carbon 42() 1543-1548
Haberl B, Bradby J, Swain M, Williams J, Munroe P
Phase Transformations Induced in Relaxed Amorphous Silicon by Indentation at Room Temperature
Applied Physics Letters 85, 23() 5559-5561
Kucheyev S, Timmers H, Zou J, Williams J, Jagadish C, Li G
Lattice Damage Produced in GaN by Swift Heavy Ions
Journal of Applied Physics 95, 10() 5360-5365
Kucheyev S, Williams J, Jagadish C
Ion-Beam-Defect Processes in Group-III Nitrides and ZnO
Vacuum 73() 93-104
Kucheyev S, Williams J, Zou J, Jagadish C
Dynamic Annealing in III-Nitrides Under Ion Bombardment
Journal of Applied Physics 95, 6() 3048-3054
Bradby J, Williams J, Swain M
In Situ Electrical Characterization of Phase Transformations in Si during Indentation
Physical Review B 67() 085205-1-9
Ip K, Overberg M, Baik K, Wilson R, Kucheyev S, Williams J, Jagadish C, Ren F, Heo Y, Norton D, Zavada J, Pearton S
ICP Dry Etching of ZnO and Effects of Hydrogen
Solid-State Electronics 47() 2289-2294
Ip K, Overberg M, Heo Y, Norton D, Pearton S, Stutz C, Kucheyev S, Jagadish C, Williams J, Luo B, Ren F, Look D, Zavada J
Hydrogen Incorporation, Diffusivity and Evolution in Bulk ZnO
Solid-State Electronics 47() 2255-2259
Kucheyev S, Jagadish C, Williams J, Deenapanray P, Yano M, Koike K, Sasa S, Inoue M, Ogata K
Implant Isolation of ZnO
Journal of Applied Physics 93, 5() 2972-2976
Kucheyev S, Williams J, Jagadish C, Zou J, Evans C, Nelson A, Hamza A
Ion-Beam-Produced Structural Defects in ZnO
Physical Review B 67, 9() 094115-1-11
MacDonald D, Maeckel H, Doshi S, Brendle W, Cuevas A, Williams J, Conway M
Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon
Applied Physics Letters 82, 18() 2987-2989
Ruault M, Ridgway M, Fortuna F, Bernas H, Williams J
In-situ Microscopy Study of Nanocavity Shrinkage in Si under Ion Beam Irradiation
European Physical Journal - Applied Physics 23() 39-40
Ruault M, Ridgway M, Fortuna F, Bernas H, Williams J
Shrinkage Mechanism of Nanocavities in Amorphous Si under Ion Irradiation: An in situ Study
Nuclear Instruments and Methods in Physics Research: Section B 206() 912-915
Wang Y, Zou J, Kucheyev S, Williams J, Jagadish C, Li G
Nature of Planar Defects in Ion-implanted GaN
Electrochemical and Solid-State Letters 6, 3() G34-G36
Bradby J, Kucheyev S, Williams J, Wong-Leung J, Swain M, Munroe P, Li G, Phillips M
Indentation-induced Damage in GaN Epilayers
Applied Physics Letters 80, 3() 383-385
Bradby J, Kucheyev S, Williams J, Jagadish C, Swain M, Munroe P, Phillips M
Contact-induced Defect Propagation in ZnO
Applied Physics Letters 80, 24() 4537-4539
Bradby J, Williams J, Wong-Leung J, Kucheyev S, Swain M, Munroe P
Spherical Indentation of Compound Semiconductors
Philosophical Magazine A 82, 10() 1931-1939
Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Nanoindentation-induced Deformation of Ge
Applied Physics Letters 80, 15() 2651-2653
Chen Y, Conway M, Williams J, Zou J
Large-quantity Production of High-yield Boron Nitride Nanotubes
Journal of Materials Research 17, 8() 1896-1899
De Medeiros Azevedo G, Williams J, Young I, Conway M, Kinomura A
In Situ Measurements of the Channeling Dependence of Ion-beam-induced Recrystallization in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 190() 772-776
Gurarie V, Otsuka P, Jamieson D, Williams J, Conway M
The Effect of Crystal Orientation on Thermal Shock-induced Fracture and Properties of Ion Implated Sapphire
Nuclear Instruments and Methods in Physics Research: Section B 190() 751-755
Ip K, Overberg M, Heo Y, Norton D, Pearton S, Kucheyev S, Jagadish C, Williams J, Wilson R, Zavada J
Thermal Stability of Ion-implanted Hydrogen in ZnO
Applied Physics Letters 81, 21() 3996-3998
Kinomura A, Williams J, Tsubouchi N, Horino Y
Platinum Atom Location on the Internal Walls of Nanocavities Investigated by Ion Channeling Analysis
Nuclear Instruments and Methods in Physics Research: Section B 190() 606-610
Kucheyev S, Boudinov H, Williams J, Jagadish C, Li G
Effect of Irradiation Temperature and Ion Flux on Electrical Isolation of GaN
Journal of Applied Physics 91, 7() 4117-4120
Kucheyev S, Bradby J, Williams J, Jagadish C, Swain M
Mechanical Deformation of Single-crystal ZnO
Applied Physics Letters 80, 6() 956-958
Kucheyev S, Deenapanray P, Jagadish C, Williams J, Yano M, Koike K, Sasa S, Inoue M, Ogata K
Electrical Isolation of ZnO by Ion Bombardment
Applied Physics Letters 81, 18() 3350-3352
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C, Li G
X-ray Spectrometry Investigation of Electrical Isolation in GaN
Journal of Applied Physics 91, 6() 3940-3942
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C, Li G
Chemical Origin of the Yellow Luminescence in GaN
Journal of Applied Physics 91, 9() 5857-5874
Kucheyev S, Williams J, Jagadish C, Zou J, Li G
Blistering of H-implanted GaN
Journal of Applied Physics 91, 6() 3928-3930
Kucheyev S, Williams J, Zou J, Li G, Jagadish C, Manasreh M, Pophristic M, Guo S, Ferguson I
Structural Disorder in Ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5() 787-789
Kucheyev S, Williams J, Zou J, Jagadish C, Pophristic M, Guo S, Ferguson I, Manasreh M
Ion-beam-produced Damage and its Stability in AIN Films
Journal of Applied Physics 92, 7() 3554-3558
Kucheyev S, Williams J, Zou J, Li G, Jagadish C, Titov A
Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature
Nuclear Instruments and Methods in Physics Research: Section B 190() 782-786
Ruault M, Fortuna F, Bernas H, Ridgway M, Williams J
How Nanocavities in Amorphous Si Shrink Under Ion Beam Irradiation: An in situ Study
Applied Physics Letters 81, 14() 2617-2619
Williams J, Jagadish C, Li G
Structural disorder in ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5() 787-789
Boudinov H, Kucheyev S, Williams J, Jagadish C, Li G
Electrical isolation of GaN by MeV ion irradiation
Applied Physics Letters 78, 7() 943-945
Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Mechanical Deformation in Silicon by Micro-indentation
Journal of Materials Research 16, 5() 1500-1507
Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Mechanical Deformation of InP and GaAs by Spherical Indentation
Applied Physics Letters 78, 21() 3235-3237
Gurarie V, Otsuka P, Williams J, Conway M
Ion Beam Modification of Thermal Stress Resistance of MgO Single Crystals with Different Crystallographic Faces
Nuclear Instruments and Methods in Physics Research: Section B 178() 138-143
Kucheyev S, Bradby J, Williams J, Jagadish C, Swain M, Li G
Deformation Behavior of Ion-Beam-Modified GaN
Applied Physics Letters 78, 2() 156-158
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C, Li G
Cathodoluminescence Depth Profiling of Ion-Implanted GaN
Applied Physics Letters 78, 1() 34-36
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C
Effects of excitation density on cathodoluminescence from GaN
Applied Physics Letters 79, 14() 2154-2156
Kucheyev S, Williams J, Pearton S
Ion Implantation into GaN
Materials Science and Engineering R-Reports 33() 51-107
Kucheyev S, Williams J, Jagadish C, Zou J, Li G, Titov A
Effect of ion species on the accumulation of ion-beam damage in GaN
Physical Review B 64() 035202/1-10
Kucheyev S, Williams J, Titov A, Li G, Jagadish C
Effect of the density of collision cascades on implantation damage in GaN
Applied Physics Letters 78, 18() 2694-2696
Kucheyev S, Williams J, Zou J, Jagadish C, Li G
The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN
Nuclear Instruments and Methods in Physics Research: Section B 178() 209-213
Kucheyev S, Williams J, Zou J, Bradby J, Jagadish C, Li G
Ion-beam-induced reconstruction of amorphous GaN
Physical Review B 63() 113202-1-4
Kucheyev S, Williams J, Zou J, Jagadish C, Li G
Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures
Applied Physics Letters 78, 10() 1373-1375
Kucheyev S, Williams J, Zou J, Jagadish C, Li G
High-dose ion implantation into GaN
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 214-218
Kucheyev S, Williams J, Zou J, Pearton S, Nakagawa Y
Implantation-Produced Structural Damage in InxGa1-xN
Applied Physics Letters 79, 5() 602-604
Stritzker B, Petravic M, Wong-Leung J, Williams J
Selectivity of Nanocavities and Dislocations for Gettering of Cu and Fe in Silicon
Applied Physics Letters 78, 18() 2682-2684
Stritzker B, Petravic M, Wong-Leung J, Williams J
Efficiency of dislocations and cavities for gettering of Cu and Fe in silico
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 154-158
Williams J, Conway M, Williams B, Wong-Leung J
Direct Observation of Voids in the Vacancy Excess Region of Ion Bombarded Silicon
Applied Physics Letters 78, 19() 2867-2869
Williams J, Ridgway M, Conway M, Wong-Leung J, Zhu X, Petravic M, Fortuna F, Ruault M, Bernas H, Kinomura A, Nakano Y, Hayashi Y
Interaction of Defects and Metals with Nanocavities in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 178() 33-43
Zhu X, Williams J, Conway M, Ridgway M, Fortuna F, Ruault M, Bernas H
Direct Observation of Irradiation-Induced Nanocavity Shrinkage in Si
Applied Physics Letters 79, 21() 3416-3418
Bradby J, Williams J, Jagadish C, Swain M, Phillips M
Mechanical properties of As-grown and ion-beam-modified GaN films
Materials Research Society Symposium Proceedings 649() Q5.5.1-Q5.5.6
Bradby J, Williams J, Wong-Leung J, Swain M
Mechanical deformation of crystalline silicon during nanoindentation
Materials Research Society Symposium Proceedings 649() Q8.10.1-Q8.10.6
Williams J
Crystalline-to-amorphous phase transformation in ion-irradiated GaAs
Physical Review B 64, 15() 1552021-1552026
Williams J
Implantation-produced structural damage in InxGa1-xN
Applied Physics Letters 79, 5() 602-604
Williams J, Ridgway M, Conway M, Wong-Leung J, Williams B, Petravic M
Interactions of point defects and impurities with open volume defects in silicon
Materials Research Society Symposium Proceedings 647() O2.4.1-O2.4.11
Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Transmission Electron Microscopy Observation of Deformation Microstructure under Spherical Indentation in Silicon
Applied Physics Letters 77() 3749-3751
Chen Y, Chadderton L, Williams J, Fitzgerald J
Solid-State Formation of Carbon and Boron Nitride Nanotubes
Materials Science Forum 343-346() 63-67
Kuball M, Hayes J, Suski T, Jun J, Leszczynski M, Domagala J, Tan H, Williams J, Jagadish C
High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering
Journal of Applied Physics 87() 2736-2741
Kucheyev S, Bradby J, Williams J, Jagadish C, Toth M, Phillips M, Swain M
Nanoindentation of Epitaxial GaN Films
Applied Physics Letters 77() 3373-3375
Kucheyev S, Williams J, Jagadish C, Li G, Pearton S
Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN
Applied Physics Letters 76() 3899-3901
Kucheyev S, Williams J, Jagadish C, Zou J, Craig V, Li G
Ion-Beam-Induced Porosity of GaN
Applied Physics Letters 77() 1455-1457
Kucheyev S, Williams J, Jagadish C, Zou J, Li G
Damage Buildup in GaN under Ion Bombardment
Physical Review B 62() 7510-7522
Kucheyev S, Williams J, Jagadish C, Zou J, Li G
Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment
Journal of Applied Physics 88() 5493-5495
Kucheyev S, Williams J, Zou J, Jagadish C, Li G
Ion beam induced dissociation and bubble formation in GaN
Applied Physics Letters 77() 3577-3579
Toth M, Kucheyev S, Williams J, Jagadish C, Phillips M, Li G
Imaging Charge Trap Distributions in GaN Using Environmental Scanning Electron Micrsocopy
Applied Physics Letters 77() 1342-1344
Williams J, Young I, Conway M
Ion Beam Induced Epitaxy Experiments in Silicon under Channeling and Random Alignments
Nuclear Instruments and Methods in Physics Research: Section B 161-163() 505-509
Williams J, Zhu X, Ridgway M, Conway M, Williams B, Fortuna F, Ruault M, Bernas H
Preferential Amorphization and Defect Annihilation at Nanocavities in Silicon Durion Ion Irradiation
Applied Physics Letters 77() 4280-4282
ARIES T, Tan H, Williams J, Jagadish C
The use of micro-raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1()
Williams J, Jagadish C
Ion-beam-induced dissociation and bubble formation in GaN
Applied Physics Letters 77, 22() 3577-3579
Williams J, Jagadish C
The use of micro-raman spectroscopy to monitor high-pressure hightemperature annealing of ion-implanted GaN films
Materials Research Society Symposium Proceedings 595() W11461-W11466
Chen Y, Williams J
Mechanochemical Reactions in the System FETiO3-Si
Journal of Materials Research 13, 12() 3499-4503
Chen Y, Chadderton L, Fitzgerald J, Williams J
A solid-state process for formation of boron nitride nanotubes
Applied Physics Letters 74() 2960-2962
Chen Y, Fitzgerald J, Williams J, Bulcock S
Synthesis of boron nitride nanotubes at low temperatures using reactive ball milling
Chemical Physics Letters 299(3-4)() 260-264
Chen Y, Williams J, Wang G, Campbell S
Increased Dissolution of Ilmenite Induced by High-Energy Ball Milling
Materials Science and Engineering A 271/1-2() 485-490
Goldberg R, Williams J, Elliman R
Preferential Amorphization at Extended Defects of Self-Ion-Irradiated-Silicon
Physical Review Letters 82, 4() 771-774
Gurarie V, Jamieson D, Orlov A, Williams J, Conway M
Thermal Fatigue of Ion Implanted Magnesium Oxide Crystals
Nuclear Instruments and Methods in Physics Research: Section B 148() 773-777
Kinomura A, Chayahara A, Tsubouchi N, Horino Y, Williams J
Activation Energies for Light Ions in Ion Beam Induced Epitaxial Crystallization
Nuclear Instruments and Methods in Physics Research: Section B 148() 370-374
Kinomura A, Williams J, Fujii K
Mass Effects on Regrowth Rates and Activation Energies of Solid-Phase Epitaxy Induced by Ion Beams in Silicon
Physical Review B 59, 23() 15 214-15 224
Li Z, Williams J, Llewellyn D, Giersig M
Mechanochemical Reaction and Formation of an Amorphous Nitride Phase During Ball Milling of Si in NH3
Applied Physics Letters 75, 20() 3111-3113
Li Z, Wong-Leung J, Deenapanray P, Conway M, Chivers D, Fitzgerald J, Williams J
The Role of Fe on the Crystallisation of a-Si3N4 from Amorphous Si-N Formed by Ion Implantation
Nuclear Instruments and Methods in Physics Research: Section B 148() 534-539
Williams J, Chen Y, Wong-Leung J, Kerr-Menz A, Swain M
Ultra-Micro-Indentation of Silicon and Compound Semiconductors with Spherical Indenters
Journal of Materials Research 14, 6() 2338-2343
Williams J, Conway M, Wong-Leung J, Deenapanray P, Petravic M, Brown R, Eaglesham D, Jacobson D
The Role of Oxygen on the Stability of Gettering of Metals to Cavities in Silicon
Applied Physics Letters 75, 16() 2424-2426
Willis P, Fitzgerald J, Williams J
Mechanochemical synthesis of boron nitride nanotubes
Materials Science Forum () 173-178
Wong-Leung J, Williams J, Kinomura A, Nakano Y, Hayashi Y, Eaglesham D
Diffusion and Transient Trapping of Metals in Silicon
Physical Review B 59, 11() 7990-7998
Zhu X, Williams J, McCallum J
Structural Changes in Ultra-High-Dose Self-Implanted Crystalline and Amorphous Silicon
Nuclear Instruments and Methods in Physics Research: Section B 148() 268-272
Zhu X, Williams J, Llewellyn D, McCallum J
Instability of Nanocavities in Amorphous Silicon
Applied Physics Letters 74, 16() 2313-2315
Zhu X, Zhang H, Williams J, Wang R, Zhang L, Wu X
Low-Temperature Thermopower in Nanostructured Silver
Applied Physics Letters 75, 1() 136-138
Deenapanray P, Williams J
A dlts investigation of the effect of ion mass, fluence and energy on the introduction of a higher-order vacancy cluster in noble gas ion bombarded n-Si
Materials Research Society Symposium Proceedings 540() 121-126
Deenapanray P, Tan H, Petravic M, Williams J, Jagadish C
Characterization of low-temperature PECVD silicon dioxide films
Materials Research Society Symposium Proceedings 555() 197-202
Welham N, Williams J
Carbothermic reduction of llmenite (FeTiO3) and rutile (TiO2)
Metallurgical and Materials Transactions B 30, 6() 1075-1082
Williams J
Instability of nanocavities in disordered and amorphous silicon under ion irradiation
Materials Research Society Symposium Proceedings 540() 127-132
Williams J, Conway M
Thermal stress resistance of ion implanted sapphire crystals
Nuclear Instruments and Methods in Physics Research: Section B 147, 1-Apr() 221-225
Williams J, Conway M
Thermal fatigue of ion implanted magnesium oxide crystals
Nuclear Instruments and Methods in Physics Research: Section B 148, 1-Apr() 773-777
Kaczmarek W, Williams J
Mechanically alloyed and rapidly quenched Fe-Zr-B-Cu: M?ssbauer investigation
Materials Science Forum 269-272, PART 1() 425-430
Petravic M, Williams J, Conway M, Deenapanray P
On the nitridation of silicon by low energy nitrogen bombardment
Applied Physics Letters 73, 9() 1287-1289
Tan H, Williams J
Annealing of ion implanted gallium nitride
Applied Physics Letters 72, 10() 1190-1192
Welham N, Williams J
Extended milling of graphite and activated carbon
Carbon 36, 9() 1309-1315
Williams J
Ion implantation of semiconductors
Materials Science and Engineering A 253, 1-2() 8-15
Williams J
The amorphization kinetics of GaAs irradiated with Si ions
Journal of Applied Physics 83, 12() 7533-7536
Williams J, Tan H
Si-implantation activation annealing of GaN up to 1400?C
Journal of Electronic Materials 27, 4() 179-184
Williams J, Wong-Leung J
The precipitation of Fe at the Si-SiO2 interface
Journal of Applied Physics 83, 1() 580-584
Williams J, Conway M, Petravic M, Tan H, Wong-Leung J
Analysis of semiconductors by ion channelling: Applications and pitfalls
Nuclear Instruments and Methods in Physics Research: Section B 136-138() 453-459
Williams J, Petravic M, Wong-Leung J
Microstructural difference between platinum and silver trapped in hydrogen induced cavities in silicon
Applied Physics Letters 72, 21() 2713-2715
Williams J, Petravic M, Wong-Leung J
The influence of cavities and point defects on boron diffusion in silicon
Applied Physics Letters 72, 19() 2418-2420
Williams J, Petravic M, Wong-Leung J
Efficient gettering of low concentrations of copper contamination to hydrogen induced nanocavities in silicon
Applied Physics Letters 73, 18() 2639-2641

Conference paper

Dissanayake S, Chow P, Lim S, Williams J, Warrender J, Sher M
Investigating Implantation Damage of Hyperdoped Semiconductors
46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) ()
Warrender J, Chow P, Lim S, Grzybowski G, Claflin B, Williams J
Novel group IV materials for infrared sensing through pulsed laser melting
3rd IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018 () 1-2
Mathews J, Tran T, Liu Y, Hudspeth Q, Wang B, Smillie L, Bruce R, Warrender J, Williams J
MP2-photoluminescence from GESN layers fabricated using ion implantation and pulsed laser melting
2019 IEEE Photonics Society Summer Topical Meeting Series, SUM 2019 () 1-2
Dissanayake S, Chow P, Lim S, Wilkins M, Dumitresc E, Yang W, Hudspeth Q, Krich J, Williams J, Warrender J, Sher M
Evaluating carrier lifetimes in laser hyperdoped silicon using terahertz spectroscopy
CLEO: Applications and Technology, CLEO_AT 2018 ()
Liu Y, Yang W, Hudspeth Q, Warrender J, Williams J, Mathews J
Hyperdoped silicon characterization and photodetectors
Frontiers in Optics, FiO 2017 ()
Mailoa J, Akey A, Simmons C, Hutchinson D, Mathews J, Sullivan J, Recht D, Winkler M, Williams J, Warrender J, Persans P, Aziz M, Buonassisi T
Hyperdoped silicon sub-band gap photoresponse for an intermediate band solar cell in silicon
40th IEEE Photovoltaic Specialist Conference, PVSC 2014 () 1073-1076
Rapp L, Haberl B, Pickard C, Bradby J, Gamaly E, Williams J, Rode A
Experimental observation for new polymorphs of silicon formed through ultrafast-laser-induced microexplosion
2014 IEEE International Conference Laser Optics, LO 2014 () 1
Rapp L, Haberl B, Bradby J, Gamaly E, Williams J, Juodkazis S, Rode A
Evidence of new high-pressure silicon phases in Fs-laser induced confined microexplosion
CLEO: Science and Innovations, CLEO_SI 2013 () 2
Rapp L, Haberl B, Bradby J, Gamaly E, Williams J, Juodkazis S, Rode A
Selective localised modifications of silicon crystal by ultrafast laser induced micro-explosion
XVIII Laser Applications in Microelectronic and Optoelectronic Manufacturing LAMOM 2013 8607() 1-6
Bayu Aji L, Ruffell S, Haberl B, Wong S, Bradby J, Williams J
Structural Relaxation of Ion-implanted Amorphous Silicon
Australian Institute of Physics Congress (AIP 2012) () 1
Deshmukh S, Haberl B, Williams J, Bradby J
Deformation of Amorphous Germanium by Nanoindentation
Australian Institute of Physics Congress (AIP 2012) () 1
Haberl B, Bradby J, Williams J
Measuring the Hardness of Silicon
Australian Institute of Physics Congress (AIP 2012) () 1
Haberl B, Guthrie M, Williams J, Bradby J
A New Crystalline Phase of Silicon Formed from Indentation-Induced High-Pressure Phases
Australian Institute of Physics Congress (AIP 2012) () 1
Johnson B, Stavrias N, Haberl B, Bayu Aji L, Bradby J, McCallum J, Williams J
Raman study on the phase transformations of the meta-stable phases of Si induced by indentation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 89-90
Mangalampalli K, Bradby J, Williams J
Controlled Temperature Indentation of Si to Investigate the Phase Transformations
Australian Institute of Physics Congress (AIP 2012) () 1
Wong S, Bradby J, Williams J
Silicon High-Pressure Phases under High Load Nanoindentation
Australian Institute of Physics Congress (AIP 2012) () 1
Umezu I, Kohno A, Warrender J, Takatori Y, Hirao Y, Nakagawa S, Sugimura A, Charnvanichborikarn S, Williams J, Aziz M
Strong mid-infrared optical absorption by supersaturated sulfur doping in silicon
International Conference on the Physics of Semiconductors 2010 1399() 51-52
Burgess J, Johnson B, Villis B, McCallum J, Charnvanichborikarn S, Wong-Leung J, Williams J
Comparison between implanted boron and phosphorus in silicon wafers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 225-226
Wang Y, Ruffell S, Sears K, Knights A, Bradby J, Williams J
Electrical properties of Si-XII and Si-III formed by nanoindentation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 105-106
Ruffell S, Williams J
Effect of oxygen on nanoscale indentation-induced phase transformations in amorphous silicon
2009 MRS Spring Meeting 1185() 1-6
Bao J, Charnvanichborikarn S, Yang Y, Tabbal M, Shin B, Wong-Leung J, Williams J, Aziz M, Capasso F
Point Defect Engineered Si Sub-Bandgap Light-emitting Diodes
Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV 2007 6800() 1-8
Bao J, Tabbal M, Kim T, Charnvanichborikarn S, Williams J, Aziz M, Capasso F
Efficient point defect engineered si light-emitting diode at 1.218 ?m
Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science/Conference on Photonic Applications, Systems and Technologies (CLEO/QELS 2007) () 1-2
Oliver D, Bradby J, Williams J, Swain M, McGrouther D, Munroe P
Indentation-Induced Damage Mechanisms in Germanium
Materials Research Society Meeting Fall 2006 983() 6
Tabbal M, Aziz M, Madi C, Charnvanichborikarn S, Williams J, Christidis T
Excimer laser processing of novel materials for optoelectronic and spintronic applications
Photon Processing in Microelectronics and Photonics 6458() 645803
Chen H, Chen Y, Li C, Williams J, Ringer S
High-Yield Boron Nitride Bamboo Nanotubes
Annual Condensed Matter and Materials Meeting 2006 () 1-3
Chen H, Chen Y, Liu Y, Xu C, Williams J
Optical Properties of BN Nanotubes
International Conference on Nanoscience and Nanotechnology (ICONN 2006) () 64-67
Rao R, Bradby J, Williams J
Nanoindentation-Induced Phase Transformation in Silicon
European Society for Neurochemistry Conference (ENS 2006) () 46-49
Williams J, Conway M, Charnvanichborikarn S
Implantion-Induced Nanocavities and Au Nanoparticles in Si and Si02
International Conference on Nanoscience and Nanotechnology (ICONN 2006) () 130-133
Williams J, De Medeiros Azevedo G, Kinomura A
Some Ion-beam Modification Issues: Ion-induced Amorphisation and Crystallisation of Silicon
Ion Beam Science Symposium 2006 () 227-261
Williams J, Elliman R, Tan H, McGowan P, Wong-Leung J, Jagadish C
Production and Processing of Semiconductor Nanocrystals and Nanostructures for Photonic Applications
National Conference and Exhibition on Nanotechnology 2003 () 74-80
Bradby J, Williams J, Wong-Leung J, Swain M, Munroe P
Mechanical Deformation of Crystalline Silicon During Nanoindentation
Materials Research Society Meeting Fall 2000 () Q8.10.1-6
Kucheyev S, Bradby J, Williams J, Swain M, Toth M, Phillips M, Jagadish C
Mechanical Properties of As-Grown and Ion-Beam-Modified GaN Films
Materials Research Society Meeting Fall 2000 () Q5.5.1-Q5.5.6
Kucheyev S, Williams J, Zou J, Jagadish C, Bradby J, Li G
Ion Beam Damage Processes in GaN
III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) () 150-160
Petravic M, Williams J, Deenapanray P
Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities
199th Meeting of the Electrochemical Society () 147-155
Williams J, Ridgway M, Conway M, Wong-Leung J, Williams B, Petravic M, Fortuna F, Ruault M, Bernas H
Interactions of Point Defects and Impurities With Open Volume Defects in Silicon
Materials Research Society Meeting Fall 2000 () 02.4.1-02.4.11
Toth M, Phillips M, Kucheyev S, Williams J, Jagadish C, Li G
Charge Contrast in SE Images Obtained Using the ESEM
Institute of Physics Conference No 165 (2000) () 275-276

Journal short contribution (non refereed)

Alkhaldi H, Kremer F, Bierschenk T, Hansen J, Nylandsted-Larsen A, Williams J, Ridgway M
Porosity as a function of stoichiometry and implantation temperature in Ge/Si1-xGex alloys (vol 119, 094303, 2016)
Journal of Applied Physics 121, 4() 2

Journal short contribution

Crompton R, Dracoulis G, Lewis B, McCracken K, Williams J
John Henry Carver 1926 - 2004
Historical Records of Australian Science 22, 1() 53-79

Journal article (non-refereed)

Haberl B, Bradby J, Swain M, Williams J, Munroe P
Response to Comment on Phase transformations induced in relaxed amorphous silicon by indentation at room temperature
Applied Physics Letters 87() 016103
Jar P, Williams J
Investigation of Combustion Reactions under Different Milling Conditions
Journal of Metastable and Nanocrystalline Materials 2-6() 79-84

Listing does not show publications before 2000

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