Professor Lan Fu
Position |
Head of Department |
---|---|
Department |
Electronic Materials Engineering |
Qualifications |
MSc(USTC), PhD (ANU) |
Office phone |
54060 |
Email |
|
Office |
Physics New 3 08 |
Research publications
Book chapter
Fu L, Mokkapati S, Barik S, Buda M, Tan H, Jagadish C
Disordering of quantum structures for optoelectronic device integration
Comprehensive Semiconductor Science and Technology
Elsevier, Amsterdam Netherlands (2011) 584-621
Disordering of quantum structures for optoelectronic device integration
Comprehensive Semiconductor Science and Technology
Elsevier, Amsterdam Netherlands (2011) 584-621
Fu L, Vandervelde T, Krishna S
Quantum Dot Infared Photodetectors
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011) 1-24
Quantum Dot Infared Photodetectors
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011) 1-24
Journal article
Ding L, Chen C, Shan X, Liu B, Wang D, Du Z, Zhao G, Su Q, Yang Y, Halkon B, Tran T, Liao J, Aharonovich I, Zhang M, Cheng F, Fu L, Xu X
Optical Nonlinearity Enabled Super-Resolved Multiplexing Microscopy
Advanced Materials 36, 2(2024)
Optical Nonlinearity Enabled Super-Resolved Multiplexing Microscopy
Advanced Materials 36, 2(2024)
Nath S, Das S, Nandi S, Xi C, Marquez C, Rua A, Uenuma M, Wang Z, Zhang S, Zhu R, Eshraghian J, Sun X, Lu T, Bian Y, Syed N, Pan W, Wang H, Lei W, Fu L, Faraone L, Lei W, Liu Y, Elliman R
Optically Tunable Electrical Oscillations in Oxide-Based Memristors for Neuromorphic Computing
Advanced Materials (2024)
Optically Tunable Electrical Oscillations in Oxide-Based Memristors for Neuromorphic Computing
Advanced Materials (2024)
Wei S, Li Z, Murugappan K, Li Z, Lysevych M, Vora K, Tan H, Jagadish C, Karawdeniya B, Nolan C, Tricoli A, Fu L
Nanowire Array Breath Acetone Sensor for Diabetes Monitoring
Advanced Science (2024) 2309481
Nanowire Array Breath Acetone Sensor for Diabetes Monitoring
Advanced Science (2024) 2309481
Chen C, Li Z, Fu L
Perovskite photodetector-based single pixel color camera for artificial vision
Light: Science & Applications 12, 1(2023)
Perovskite photodetector-based single pixel color camera for artificial vision
Light: Science & Applications 12, 1(2023)
He J, Huang Z, Li Z, Wong W, Yu Y, Huanglong S, Li X, Fu L, Tan H, Jagadish C, Yuan X
Design of InAs nanosheet arrays for high-performance polarization-sensitive infrared photodetection
Journal of Physics D: Applied Physics 56, 1(2023)
Design of InAs nanosheet arrays for high-performance polarization-sensitive infrared photodetection
Journal of Physics D: Applied Physics 56, 1(2023)
John A, Wei S, Yuwono J, Kumar P, Nisbet D, Karawdeniya B, Fu L, Murugappan K, Tricoli A
Nano-structuring metal organic frameworks on semiconductor nanowire arrays for highly sensitive and selective chemical sensing
Applied Physics Reviews 10, 3(2023) 1-12
Nano-structuring metal organic frameworks on semiconductor nanowire arrays for highly sensitive and selective chemical sensing
Applied Physics Reviews 10, 3(2023) 1-12
Kang Y, Wang D, Wang A, Chen W, Liu B, Fang S, Liu X, Li L, Ge B, Fu L, Liu Z
Light-Induced Adaptive Structural Evolution in Gallium Nitride Nanowire/Nickel Hydroxide Symbiotic System in Photoelectrochemical Environment
Advanced Functional Materials 34, 7(2023)
Light-Induced Adaptive Structural Evolution in Gallium Nitride Nanowire/Nickel Hydroxide Symbiotic System in Photoelectrochemical Environment
Advanced Functional Materials 34, 7(2023)
Li C, Zhang X, Yi R, Li Z, Zhang F, Liu K, Gan X, Fu L, Xiao F, Zhao J, Tan H, Jagadish C
Low-Threshold Multiwavelength Plasmonic Nanolasing in an ?H?-Shape Cavity
Laser and Photonics Reviews 17, 10(2023) 2300187
Low-Threshold Multiwavelength Plasmonic Nanolasing in an ?H?-Shape Cavity
Laser and Photonics Reviews 17, 10(2023) 2300187
Li Z, He Z, Xi C, Zhang F, Huanglong S, Yu Y, Tan H, Jagadish C, Fu L
Review on III?V Semiconductor Nanowire Array Infrared Photodetectors
Advanced Materials Technologies 8, 13(2023)
Review on III?V Semiconductor Nanowire Array Infrared Photodetectors
Advanced Materials Technologies 8, 13(2023)
Yu H, Wang R, Memon M, Luo Y, Xiao S, Fu L, Sun H
Highly Responsive Switchable Broadband DUV-NIR Photodetector and Tunable Emitter Enabled by Uniform and Vertically Grown III?V Nanowire on Silicon Substrate for Integrated Photonics
Nano Micro Small 20, 10(2023) 2307458
Highly Responsive Switchable Broadband DUV-NIR Photodetector and Tunable Emitter Enabled by Uniform and Vertically Grown III?V Nanowire on Silicon Substrate for Integrated Photonics
Nano Micro Small 20, 10(2023) 2307458
Zhang X, Yi R, Zhao B, Li C, Li L, Li Z, Zhang F, Wang N, Zhang M, Fang L, Zhao J, Chen P, Lu W, Fu L, Tan H, Jagadish C, Gan X
Vertical Emitting Nanowire Vector Beam Lasers
ACS Nano 17, 11(2023) 10918-10924
Vertical Emitting Nanowire Vector Beam Lasers
ACS Nano 17, 11(2023) 10918-10924
Zhou F, Gong H, Xiao M, Ma Y, Wang Z, Yu X, Li L, Fu L, Tan H, Yang Y, Ren F, Gu S, Zheng Y, Lu H, Zhang R, Zhang Y, Ye J
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics
Nature Communications 14, 1(2023) 1-10
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics
Nature Communications 14, 1(2023) 1-10
Budnik G, Scott J, Jiao C, Maazouz M, Gledhill G, Fu L, Tan H, Toth M
Nanoscale 3D Tomography by In-Flight Fluorescence Spectroscopy of Atoms Sputtered by a Focused Ion Beam
Nano Letters 22, 20(2022) 8287-8293
Nanoscale 3D Tomography by In-Flight Fluorescence Spectroscopy of Atoms Sputtered by a Focused Ion Beam
Nano Letters 22, 20(2022) 8287-8293
Li Z, Li L, Wang F, Xu L, Gao Q, Alabadla A, Peng K, Vora K, Hattori H, Tan H, Jagadish C, Fu L
Investigation of light-matter interaction in single vertical nanowires in ordered nanowire arrays
Nanoscale 14, 9(2022) 3527-3536
Investigation of light-matter interaction in single vertical nanowires in ordered nanowire arrays
Nanoscale 14, 9(2022) 3527-3536
Pan W, Liu J, Zhang Z, Gu R, Suvorova A, Gain S, Wang H, Li Z, Fu L, Faraone L, Lei W
Large area van der Waals epitaxy of II–VI CdSe thin films for flexible optoelectronics and full-color imaging
Nano Research 15, 1(2022) 368�¢â?¬â??376
Large area van der Waals epitaxy of II–VI CdSe thin films for flexible optoelectronics and full-color imaging
Nano Research 15, 1(2022) 368�¢â?¬â??376
Pan W, Ma S, Nath S, Gu R, Zhang Z, Fu L, Faraone L, Lei W
Non-invasive and non-destructive characterization of MBE-grown CdZnTe/CdTe superlattice-based dislocation filtering layers
Journal of Applied Physics 131, 20(2022)
Non-invasive and non-destructive characterization of MBE-grown CdZnTe/CdTe superlattice-based dislocation filtering layers
Journal of Applied Physics 131, 20(2022)
Wang D, Wu W, Fang S, Kang Y, Wang X, Hu W, Yu H, Zhang H, Liu X, Luo Y, Fu L, He J, Long S, Liu S, Sun H
Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires
SCOPUS Not Found 11, 1(2022)
Observation of polarity-switchable photoconductivity in III-nitride/MoS
SCOPUS Not Found 11, 1(2022)
Wei S, Li Z, Murugappan K, Li Z, Zhang F, Gopakumar Saraswathyvilasam A, Lysevych M, Tan H, Jagadish C, Tricoli A, Fu L
A Self-Powered Portable Nanowire Array Gas Sensor for Dynamic NO2 Monitoring at Room Temperature
Advanced Materials 35, 12(2022) 2207199
A Self-Powered Portable Nanowire Array Gas Sensor for Dynamic NO2 Monitoring at Room Temperature
Advanced Materials 35, 12(2022) 2207199
Yi R, Zhang X, Li C, Zhao B, Wang J, Li Z, Gan X, Li L, Li Z, Zhang F, Fang L, Wang N, Chen P, Lu W, Fu L, Zhao J, Tan H, Jagadish C
Self-frequency-conversion nanowire lasers
Light: Science & Applications 11, 1(2022) 1-9
Self-frequency-conversion nanowire lasers
Light: Science & Applications 11, 1(2022) 1-9
Yi R, Zhang X, Zhang F, Gu L, Zhang Q, Fang L, Zhao J, Fu L, Tan H, Jagadish C, Gan X
Integrating a Nanowire Laser in an on-Chip Photonic Waveguide
Nano Letters 22, 24(2022) 9920-9927
Integrating a Nanowire Laser in an on-Chip Photonic Waveguide
Nano Letters 22, 24(2022) 9920-9927
Zuo X, Li Z, Wong W, Yu Y, Li X, He J, Fu L, Tan H, Jagadish C, Yuan X
Design of InAs nanosheet arrays with ultrawide polarization-independent high absorption for infrared photodetection
Applied Physics Letters 120, 7(2022)
Design of InAs nanosheet arrays with ultrawide polarization-independent high absorption for infrared photodetection
Applied Physics Letters 120, 7(2022)
Trendafilov S, Allen J, Allen M, Dev S, Li Z, Fu L, Jagadish C
Light Absorption in Nanowire Photonic Crystal Slabs and the Physics of Exceptional Points: The Shape Shifter Modes
Sensors 21, 16(2021) 1-10
Light Absorption in Nanowire Photonic Crystal Slabs and the Physics of Exceptional Points: The Shape Shifter Modes
Sensors 21, 16(2021) 1-10
Wang D, Liu X, Kang Y, Wang X, Wu Y, Fang S, Yu H, Memon M, Zhang H, Hu W, Fu L
Bidirectional photocurrent in p–n heterojunction nanowires
Nature Electronics 4, 9(2021) 645-652
Bidirectional photocurrent in p–n heterojunction nanowires
Nature Electronics 4, 9(2021) 645-652
Wang H, Fang W, Xu T, Xia H, Xie R, Zhou X, Ge X, Liu W, Zhu Y, Sun L, Fu L
Slowing Hot-Electron Relaxation in Mix-Phase Nanowires for Hot-Carrier Photovoltaics
Nano Letters 21, 18(2021) 7761-7768
Slowing Hot-Electron Relaxation in Mix-Phase Nanowires for Hot-Carrier Photovoltaics
Nano Letters 21, 18(2021) 7761-7768
Wang H, Wang F, Xia H, Wang P, Li T, Li J, Wang Z, Sun J, Wu P, Ye J, Fu L
Direct observation and manipulation of hot electrons at room temperature
National Science Review 8, 9(2021) 1-9
Direct observation and manipulation of hot electrons at room temperature
National Science Review 8, 9(2021) 1-9
Wei S, Li Z, John A, Karawdeniya B, Li Z, Zhang F, Vora K, Tan H, Jagadish C, Murugappan K, Tricoli A, Fu L
Semiconductor Nanowire Arrays for High-Performance Miniaturized Chemical Sensing
Advanced Functional Materials 32, 5(2021)
Semiconductor Nanowire Arrays for High-Performance Miniaturized Chemical Sensing
Advanced Functional Materials 32, 5(2021)
Zhang F, Zhang X, Li Z, Yi R, Li Z, Wang N, Xu X, Azimi Z, Li L, Lysevych M, Gan X, Lu Y, Tan H, Jagadish C, Fu L
A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications
Advanced Functional Materials 32, 3(2021)
A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications
Advanced Functional Materials 32, 3(2021)
Zhang X, Yi R, Gagrani N, Li Z, Zhang F, Gan X, Yao X, Yuan X, Wang N, Zhao J, Chen P, Lu W, Fu L, Tan H, Jagadish C
Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers
ACS Nano 15, 5(2021) 9126-9133
Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers
ACS Nano 15, 5(2021) 9126-9133
Zhu Y, Raj V, Li Z, Tan H, Jagadish C, Fu L
Self-Powered InP Nanowire Photodetector for Single-Photon Level Detection at Room Temperature
Advanced Materials 33, 49(2021) 1-9
Self-Powered InP Nanowire Photodetector for Single-Photon Level Detection at Room Temperature
Advanced Materials 33, 49(2021) 1-9
Zhu Y, Sun X, Tang Y, Fu L, Lu Y
Two-dimensional materials for light emitting applications: Achievement, challenge and future perspectives
Nano Research 14, 6(2021) 1912-1936
Two-dimensional materials for light emitting applications: Achievement, challenge and future perspectives
Nano Research 14, 6(2021) 1912-1936
Zhu Y, Wang B, Li Z, Zhang J, Tang Y, Torres Alvarez J, Lipinski W, Fu L, Lu Y
A High-Efficiency Wavelength-Tunable Monolayer LED with Hybrid Continuous-Pulsed Injection
Advanced Materials 33, 29(2021)
A High-Efficiency Wavelength-Tunable Monolayer LED with Hybrid Continuous-Pulsed Injection
Advanced Materials 33, 29(2021)
Krishnamurthi V, Khan H, Ahmed T, Zavabeti A, Tawfik S, Jain S, Spencer M, Balendhran S, Crozier K, Li Z, Fu L, Mohiuddin M
Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors
Advanced Materials 32, -(2020) 1-10
Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors
Advanced Materials 32, -(2020) 1-10
Li Z, Allen J, Allen M, Tan H, Jagadish C, Fu L
Review on III-V semiconductor single nanowire-based room temperature infrared photodetectors
Materials 13, 6(2020)
Review on III-V semiconductor single nanowire-based room temperature infrared photodetectors
Materials 13, 6(2020)
Li Z, Yuan X, Gao Q, Yang I, Li L, Caroff-Gaonac'h P, Allen M, Allen J, Tan H, Jagadish C, Fu L
In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse
Nanotechnology 31, 24(2020)
In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse
Nanotechnology 31, 24(2020)
Peng K, Jevtics D, Zhang F, Sterzl S, Damry D, Rothmann M, Guilhabert B, Strain M, Tan H, Herz L, Fu L, Dawson M, Hurtado A, Jagadish C, Johnston M
Three-dimensional cross-nanowire networks recover full terahertz state
Science 368, 6490(2020) 510-513
Three-dimensional cross-nanowire networks recover full terahertz state
Science 368, 6490(2020) 510-513
Raj V, Rougieux F, Fu L, Tan H, Jagadish C
Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts
IEEE Journal of Photovoltaics 10, 6(2020) 1657-1666
Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts
IEEE Journal of Photovoltaics 10, 6(2020) 1657-1666
Yang I, Kim S, Niihori M, Alabadla A, Li Z, Li L, Lockrey M, Choi D, Aharonovich I, Wong-Leung J, Tan H, Jagadish C, Fu L
Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes
Nano Energy 71(2020)
Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes
Nano Energy 71(2020)
Gao Q, Li Z, Li L, Vora K, Li Z, Alabadla A, Wang F, Guo Y, Peng K, Wenas Y, Mokkapati S, Karouta F, Tan H, Jagadish C, Fu L
Axial p-n junction design and characterization for InP nanowire array solar cells
Progress in Photovoltaics: Research and Applications 27, 3(2019) 237-244
Axial p-n junction design and characterization for InP nanowire array solar cells
Progress in Photovoltaics: Research and Applications 27, 3(2019) 237-244
Haque A, Morshed M, Li Z, Li L, Vora K, Xu L, Fu L, Miroshnichenko A, Hattori H
Damage analysis of a perfect broadband absorber by a femtosecond laser
Scientific Reports 9, 15880(2019) 1-8
Damage analysis of a perfect broadband absorber by a femtosecond laser
Scientific Reports 9, 15880(2019) 1-8
Morshed M, Li Z, Olbricht B, Fu L, Haque A, Li L, Aoni R, Rahmani M, Miroshnichenko A, Hattori H
High Fluence Chromium and Tungsten Bowtie Nano-antennas
Scientific Reports 9, 1(2019)
High Fluence Chromium and Tungsten Bowtie Nano-antennas
Scientific Reports 9, 1(2019)
Raj V, Fu L, Tan H, Jagadish C
Design Principles for Fabrication of InP-Based Radial Junction Nanowire Solar Cells Using an Electron Selective Contact
IEEE Journal of Photovoltaics 9, 4(2019) 980-991
Design Principles for Fabrication of InP-Based Radial Junction Nanowire Solar Cells Using an Electron Selective Contact
IEEE Journal of Photovoltaics 9, 4(2019) 980-991
Raj V, Vora K, Fu L, Tan H, Jagadish C
High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture
ACS Nano 13, 10(2019) 12015-12023
High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture
ACS Nano 13, 10(2019) 12015-12023
Wen B, Zhu Y, Yudistira D, Boes A, Zhang L, Yidirim T, Liu B, Yan H, Sun X, Zhou Y, Xue Y, Zhang Y, Fu L, Mitchell A, Zhang H, Lu Y
Ferroelectric-Driven Exciton and Trion Modulation in Monolayer Molybdenum and Tungsten Diselenides
ACS Nano 13, 5(2019) 5335-5343
Ferroelectric-Driven Exciton and Trion Modulation in Monolayer Molybdenum and Tungsten Diselenides
ACS Nano 13, 5(2019) 5335-5343
Wong-Leung J, Yang I, Li Z, Karuturi S, Fu L, Tan H, Jagadish C
Engineering III-V Semiconductor Nanowires for Device Applications
Advanced Materials 32, 18(2019) 1904359
Engineering III-V Semiconductor Nanowires for Device Applications
Advanced Materials 32, 18(2019) 1904359
Yang I, Li Z, Wong-Leung J, Zhu Y, Li Z, Gagrani A, Li L, Lockrey M, Nguyen H, Lu Y, Tan H, Jagadish C, Fu L
Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes
Nano Letters 19, 6(2019) 3821-3829
Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes
Nano Letters 19, 6(2019) 3821-3829
Yu P, Besteiro L, Huang Y, Wu J, Fu L, Tan H, Jagadish C, Wiederrecht P, Govorov A, Wang Z
Broadband Metamaterial Absorbers
Advanced Optical Materials 7, 3(2019) 1-32
Broadband Metamaterial Absorbers
Advanced Optical Materials 7, 3(2019) 1-32
Yu P, Li Z, Wu T, Wang Y, Tong X, Li C, Wang Z, Wei S, Zhang Y, Liu H, Fu L, Zhang Y, Wu J, Tan H, Jagadish C, Wang Z
Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission
Journal of Spectroscopy and Dynamics 13, 11(2019) 13492-13500
Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission
Journal of Spectroscopy and Dynamics 13, 11(2019) 13492-13500
Yuan X, Li L, Li Z, Wang F, Wang N, Fu L, He J, Tan H, Jagadish C
Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires
Nanoscale 11, 18(2019) 9207-9215
Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires
Nanoscale 11, 18(2019) 9207-9215
Zhang X, Huang H, Yao X, Li Z, Zhou C, Zhang X, Chen P, Fu L, Zhou X, Wang J, Hu W, Lu W, Zou J, Tan H, Jagadish C
Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire
ACS Nano 13, 3(2019) 3492-3499
Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire
ACS Nano 13, 3(2019) 3492-3499
Zhang X, Li Z, Yao X, Huang H, Wei D, Zhou C, Tang Z, Yuan X, Chen P, Hu W, Zou J, Lu W, Fu L
Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory
ACS Applied Electronic Materials 1, 9(2019) 1825-1831
Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory
ACS Applied Electronic Materials 1, 9(2019) 1825-1831
Li F, Xie X, Gao Q, Tan L, Zhou Y, Yang Q, Ma J, Fu L, Jagadish C, Tan H
Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires
Nanotechnology 29, 22(2018) 1-10
Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires
Nanotechnology 29, 22(2018) 1-10
Li J, Chen X, Ma T, Cui X, Ren F, Gu S, Zhang R, Zheng Y, Ringer S, Fu L, Tan H, Jagadish C, Ye J, Cui X
Identification and modulation of electronic band structures of single-phase ?-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy
Applied Physics Letters 113, 4(2018) 1-6
Identification and modulation of electronic band structures of single-phase ?-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy
Applied Physics Letters 113, 4(2018) 1-6
Li Z, Tan H, Jagadish C, Fu L
III-V Semiconductor Single Nanowire Solar Cells: A Review
Advanced Materials Technologies 3, 9(2018) 12
III-V Semiconductor Single Nanowire Solar Cells: A Review
Advanced Materials Technologies 3, 9(2018) 12
Li Z, Yang I, Li L, Gao Q, Chong J, Li Z, Lockrey M, Tan H, Jagadish C, Fu L
Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance
Progress in Natural Science: Materials International 28, 2(2018) 178-182
Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance
Progress in Natural Science: Materials International 28, 2(2018) 178-182
Parkinson P, Alanis J, Peng K, Saxena D, Mokkapati S, Jiang N, Fu L, Tan H, Jagadish C
Modal refractive index measurement in nanowire lasers - a correlative approach
Nano Futures 2, 035004(2018)
Modal refractive index measurement in nanowire lasers - a correlative approach
Nano Futures 2, 035004(2018)
Peng K, Parkinson P, Fu L, Gao Q, Boland J, Guo Y, Jiang N, Tan H, Johnston M, Jagadish C
Distinguishing cap and core contributions to the photoconductive terahertz response of single GaAs based core–shell–cap nanowire detectors
Lithuanian Journal of Physics 58, 1(2018) 15-23
Distinguishing cap and core contributions to the photoconductive terahertz response of single GaAs based core–shell–cap nanowire detectors
Lithuanian Journal of Physics 58, 1(2018) 15-23
Raj V, Santos T, Rougieux F, Vora K, Lysevych M, Fu L, Mokkapati S, Tan H, Jagadish C
Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer
Journal of Physics D: Applied Physics 51, 39(2018) 1-9
Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer
Journal of Physics D: Applied Physics 51, 39(2018) 1-9
Xu W, Ren F, Jevtics D, Hurtado A, Li L, Gao Q, Ye J, Wang F, Guilhabert B, Fu L, Lu H, Zhang R, Tan H, Dawson M, Jagadish C
Vertically Emitting Indium Phosphide Nanowire Lasers
Nano Letters 18, 6(2018) 3414-3420
Vertically Emitting Indium Phosphide Nanowire Lasers
Nano Letters 18, 6(2018) 3414-3420
Yang I, Zhang X, Zheng C, Gao Q, Li Z, Li L, Lockrey M, Nguyen H, Caroff-Gaonac'h P, Etheridge J, Tan H, Jagadish C, Wong-Leung J, Fu L
Radial Growth Evolution of InGaAs/InP Multi Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy
ACS Nano 12, 10(2018) 10374-10382
Radial Growth Evolution of InGaAs/InP Multi Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy
ACS Nano 12, 10(2018) 10374-10382
Yu P, Zhang F, Li Z, Zhong Z, Govorov A, Fu L, Tan H, Jagadish C, Wang Z
Giant optical pathlength enhancement in plasmonic thin film solar cells using core-shell nanoparticles
Journal of Physics D: Applied Physics 51, 29(2018) 8
Giant optical pathlength enhancement in plasmonic thin film solar cells using core-shell nanoparticles
Journal of Physics D: Applied Physics 51, 29(2018) 8
Zhou W, Roelkens G, Yoo S, Gerhold M, Fu L, Hu J
Introduction to the Special Issue on Emerging Areas in Integrated Photonics
IEEE Journal of Selected Topics in Applied Earth Observations and Remote Sensing 24, 6(2018) 1-3
Introduction to the Special Issue on Emerging Areas in Integrated Photonics
IEEE Journal of Selected Topics in Applied Earth Observations and Remote Sensing 24, 6(2018) 1-3
Zhu Y, Li Z, Zhang L, Wang B, Luo Z, Long J, Yang J, Fu L, Lu Y
High-Efficiency Monolayer Molybdenum Ditelluride Light-Emitting Diode and Photodetector
ACS Applied Materials and Interfaces 10, 50(2018) 43291-43298
High-Efficiency Monolayer Molybdenum Ditelluride Light-Emitting Diode and Photodetector
ACS Applied Materials and Interfaces 10, 50(2018) 43291-43298
Alanis J, Saxena D, Mokkapati S, Jiang N, Peng K, Tang X, Fu L, Tan H, Jagadish C, Parkinson P
Large-scale statistics for threshold optimization of optically pumped nanowire lasers
Nano Letters 17, 8(2017) 4860-4865
Large-scale statistics for threshold optimization of optically pumped nanowire lasers
Nano Letters 17, 8(2017) 4860-4865
Bo R, Nasiri-Varg N, Chen H, Caputo D, Fu L, Tricoli A
Low-Voltage High-Performance UV Photodetectors: An Interplay between Grain Boundaries and Debye Length
ACS Applied Materials and Interfaces 9, 3(2017) 2606-2615
Low-Voltage High-Performance UV Photodetectors: An Interplay between Grain Boundaries and Debye Length
ACS Applied Materials and Interfaces 9, 3(2017) 2606-2615
Li F, Li Z, Tan L, Zhou Y, Ma J, Lysevych M, Fu L, Tan H, Jagadish C
Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors
Nanotechnology 28, 12(2017) 9
Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors
Nanotechnology 28, 12(2017) 9
Nasiri-Varg N, Bo R, Fu L, Tricoli A
Three-dimensional nano-heterojunction networks: A highly performing structure for fast visible-blind UV photodetectors
Nanoscale 9, 5(2017) 2059-2067
Three-dimensional nano-heterojunction networks: A highly performing structure for fast visible-blind UV photodetectors
Nanoscale 9, 5(2017) 2059-2067
Nie K, Li J, Chen X, Xu Y, Tu X, Ren F, Du Q, Fu L, Kang L, Tang K, Gu S, Zhang R, Wu P, Zheng Y, Tan H, Jagadish C, Ye J
Extreme absorption enhancement in ZnTe:O/ZnO intermediate band core-shell nanowires by interplay of dielectric resonance and plasmonic bowtie nanoantennas
Scientific Reports 7, 1(2017) 7503-7503
Extreme absorption enhancement in ZnTe:O/ZnO intermediate band core-shell nanowires by interplay of dielectric resonance and plasmonic bowtie nanoantennas
Scientific Reports 7, 1(2017) 7503-7503
Peng K, Parkinson P, Gao Q, Boland J, Li Z, Wang F, Mokkapati S, Fu L, Johnston M, Tan H, Jagadish C
Single n+-i-n+ InP Nanowires for Highly Sensitive Terahertz Detection
Nanotechnology 28, 12(2017) 9
Single n+-i-n+ InP Nanowires for Highly Sensitive Terahertz Detection
Nanotechnology 28, 12(2017) 9
Burgess T, Saxena D, Mokkapati S, Li Z, Hall C, Davis J, Wang Y, Smith L, Fu L, Caroff-Gaonac'h P, Tan H, Jagadish C
Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
Nature Communications 7(2016)
Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
Nature Communications 7(2016)
Cai Q, Du A, Gao G, Mateti s, Cowie B, Qian D, Zhang S, Lu Y, Fu L, Taniguchi T, Huang S, Chen Y, Ruoff R, Li L
Molecule-Induced Conformational Change in Boron Nitride Nanosheets with Enhanced Surface Adsorption
Advanced Functional Materials 26, 45(2016) 8202-8210
Molecule-Induced Conformational Change in Boron Nitride Nanosheets with Enhanced Surface Adsorption
Advanced Functional Materials 26, 45(2016) 8202-8210
Gao Q, Dubrovskii V, Caroff-Gaonac'h P, Wong-Leung J, Li L, Guo Y, Fu L, Tan H, Jagadish C
Simultaneous Selective-Area and Vapor?Liquid?Solid Growth of InP Nanowire Arrays
Nano Letters 16, 7(2016) 4361-4367
Simultaneous Selective-Area and Vapor?Liquid?Solid Growth of InP Nanowire Arrays
Nano Letters 16, 7(2016) 4361-4367
Nasiri-Varg N, Bo R, Chen H, White T, Fu L, Tricoli A
Structural Engineering of Nano-Grain Boundaries for Low-Voltage UV-Photodetectors with Gigantic Photo- to Dark-Current Ratios
Advanced Optical Materials 4, 11(2016) 1787-1795
Structural Engineering of Nano-Grain Boundaries for Low-Voltage UV-Photodetectors with Gigantic Photo- to Dark-Current Ratios
Advanced Optical Materials 4, 11(2016) 1787-1795
Nasiri-Varg N, Bo R, Hung T, Roy V, Fu L, Tricoli A
Tunable Band-Selective UV-Photodetectors by 3D Self-Assembly of Heterogeneous Nanoparticle Networks
Advanced Functional Materials 26, 40(2016) 7359-7366
Tunable Band-Selective UV-Photodetectors by 3D Self-Assembly of Heterogeneous Nanoparticle Networks
Advanced Functional Materials 26, 40(2016) 7359-7366
Peng K, Parkinson P, Boland J, Gao Q, Wenas Y, Davies C, Li Z, Fu L, Johnston M, Tan H, Jagadish C
Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors
Nano Letters 16, 8(2016) 4925-4931
Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors
Nano Letters 16, 8(2016) 4925-4931
Xu R, Zhang S, Wang F, Yang J, Wang Z, Pei J, Win Myint Y, Xing B, Yu Z, Fu L, Qin Q, Lu Y
Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors
ACS Nano 10, 2(2016) 2046-2053
Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors
ACS Nano 10, 2(2016) 2046-2053
Zhang G, Li Z, Yuan X, Wang F, Fu L, Zhuang Z, Ren F, Liu B, Zhang R, Tan H, Jagadish C
Single nanowire green InGaN/GaN light emitting diodes
Nanotechnology 27, 43(2016) 1-7
Single nanowire green InGaN/GaN light emitting diodes
Nanotechnology 27, 43(2016) 1-7
Zhong Z, Li Z, Gao Q, Li Z, Peng K, Li L, Mokkapati S, Vora K, Wu J, Zhang G, Wang Z, Fu L, Tan H, Jagadish C
Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating
Nano Energy 28, -(2016) 106-114
Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating
Nano Energy 28, -(2016) 106-114
Hu W, Lau K, Liu Y, Withers R, Chen H, Fu L, Gong B, Hutchison W
Colossal Dielectric Permittivity in (Nb+Al) Codoped Rutile TiO2 Ceramics: Compositional Gradient and Local Structure
Chemistry of Materials 27, 14(2015) 4934-4942
Colossal Dielectric Permittivity in (Nb+Al) Codoped Rutile TiO2 Ceramics: Compositional Gradient and Local Structure
Chemistry of Materials 27, 14(2015) 4934-4942
Li T, Lu H, Fu L, Tan H, Jagadish C, Dagenais M
Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells
Applied Physics Letters 106, 5(2015) 1-5
Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells
Applied Physics Letters 106, 5(2015) 1-5
Li Z, Wenas Y, Fu L, Mokkapati S, Tan H, Jagadish C
Influence of Electrical Design on Core-Shell GaAs Nanowire Array Solar Cells
IEEE Journal of Photovoltaics 5, 3(2015) 854-864
Influence of Electrical Design on Core-Shell GaAs Nanowire Array Solar Cells
IEEE Journal of Photovoltaics 5, 3(2015) 854-864
Li Z, Yuan X, Fu L, Peng K, Wang F, Fu X, Caroff-Gaonac'h P, White T, Jagadish C, Tan H
Room temperature GaAsSb single nanowire infrared photodetectors
Nanotechnology 26, 44(2015)
Room temperature GaAsSb single nanowire infrared photodetectors
Nanotechnology 26, 44(2015)
Nasiri-Varg N, Bo R, Wang F, Fu L, Tricoli A
Ultraporous Electron-Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible-Blind UV Photodetectors
Advanced Materials 27, 29(2015) 4336-4343
Ultraporous Electron-Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible-Blind UV Photodetectors
Advanced Materials 27, 29(2015) 4336-4343
Peng K, Parkinson P, Fu L, Gao Q, Jiang N, Guo Y, Wang F, Joyce H, Boland J, Tan H, Jagadish C, Johnston M
Single nanowire photoconductive terahertz detectors
Nano Letters 15, 1(2015) 206-210
Single nanowire photoconductive terahertz detectors
Nano Letters 15, 1(2015) 206-210
Wang F, Gao Q, Peng K, Li Z, Li Z, Guo Y, Fu L, Smith L, Tan H, Jagadish C
Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping
Nano Letters 15, 5(2015) 3017-3023
Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping
Nano Letters 15, 5(2015) 3017-3023
Yuan X, Caroff-Gaonac'h P, Wong-Leung J, Fu L, Tan H, Jagadish C
Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering
Advanced Materials 27, 40(2015) 6096-6103
Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering
Advanced Materials 27, 40(2015) 6096-6103
Gao Q, Saxena D, Wang F, Fu L, Mokkapati S, Guo Y, Li L, Wong-Leung J, Caroff-Gaonac'h P, Tan H, Jagadish C
Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Nano Letters 14, 9(2014) 5206-5211
Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Nano Letters 14, 9(2014) 5206-5211
McKerracher I, Fu L, Tan H, Jagadish C
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors with bandpass guided-mode resonance filters
Physica Status Solidi: Rapid Research Letters 8, 1(2014) 69-73
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors with bandpass guided-mode resonance filters
Physica Status Solidi: Rapid Research Letters 8, 1(2014) 69-73
Jolley G, Faraone L, Fu L, Lu H, Tan H, Jagadish C
A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination
Applied Physics Letters 102, 21(2013) 1-4
A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination
Applied Physics Letters 102, 21(2013) 1-4
Jolley G, Fu L, Lu H, Tan H, Jagadish C
The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells
Progress in Photovoltaics: Research and Applications 21, 4(2013) 736-746
The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells
Progress in Photovoltaics: Research and Applications 21, 4(2013) 736-746
Lysevych M, Tan H, Karouta F, Fu L, Jagadish C
Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers
Optics Express 21, 7(2013) 8276-8285
Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers
Optics Express 21, 7(2013) 8276-8285
McKerracher I, Fu L, Tan H, Jagadish C
Integration of bandpass guided-mode resonance filters with mid-wavelength infrared photodetectors
Journal of Physics D: Applied Physics 46, 9(2013) 1-8
Integration of bandpass guided-mode resonance filters with mid-wavelength infrared photodetectors
Journal of Physics D: Applied Physics 46, 9(2013) 1-8
Parkinson P, Lee Y, Fu L, Breuer S, Tan H, Jagadish C
Three-dimensional in situ photocurrent mapping for nanowire photovoltaics
Nano Letters 13, 4(2013) 1405-1409
Three-dimensional in situ photocurrent mapping for nanowire photovoltaics
Nano Letters 13, 4(2013) 1405-1409
Turner S, Mokkapati S, Jolley G, Fu L, Tan H, Jagadish C
Periodic dielectric structures for light-trapping in InGaAs/GaAs quantum well solar cells
Optics Express 21, 9(2013) A324-A335
Periodic dielectric structures for light-trapping in InGaAs/GaAs quantum well solar cells
Optics Express 21, 9(2013) A324-A335
Jolley G, McKerracher I, Fu L, Tan H, Jagadish C
The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors
Journal of Applied Physics 111, 12(2012)
The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors
Journal of Applied Physics 111, 12(2012)
Li Z, Hattori H, Parkinson P, Tian J, Fu L, Tan H, Jagadish C
A plasmonic staircase nano-antenna device with strong electric field enhancement for surface enhanced Raman scattering (SERS) applications
Journal of Physics D: Applied Physics 45, 30(2012) 1-5
A plasmonic staircase nano-antenna device with strong electric field enhancement for surface enhanced Raman scattering (SERS) applications
Journal of Physics D: Applied Physics 45, 30(2012) 1-5
Lu H, Mokkapati S, Fu L, Jolley G, Tan H, Jagadish C
Plasmonic quantum dot solar cells for enhanced infrared response
Applied Physics Letters 100, 10(2012) 1 - 4
Plasmonic quantum dot solar cells for enhanced infrared response
Applied Physics Letters 100, 10(2012) 1 - 4
McKerracher I, Fu L, Tan H, Jagadish C
Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers
Journal of Applied Physics 112, 11(2012) 1-11
Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers
Journal of Applied Physics 112, 11(2012) 1-11
Du S, Fu L, Tan H, Jagadish C
Investigation of ion implantation induced intermixing in InP based quaternary quantum wells
Journal of Physics D: Applied Physics 44, 47(2011) 1-7
Investigation of ion implantation induced intermixing in InP based quaternary quantum wells
Journal of Physics D: Applied Physics 44, 47(2011) 1-7
Headley C, Fu L, Parkinson P, Xu X, Lloyd-Hughes J, Jagadish C, Johnston M
Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1(2011) 17-21
Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1(2011) 17-21
Headley C, Fu L, Parkinson P, Xu X, Lloyd-Hughes J, Jagadish C, Johnston M
Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1(2011) 17-21
Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1(2011) 17-21
Li Z, Hattori H, Fu L, Tan H, Jagadish C
Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18(2011) 2690-2697
Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18(2011) 2690-2697
Li Z, Hattori H, Fu L, Tan H, Jagadish C
Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18(2011) 2690-2697
Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18(2011) 2690-2697
Liu G, Fu L, Rode A, Craig V
Water droplet motion control on superhydrophobic surfaces: Exploiting the Wenzel-to-Cassie transition
Langmuir 27, 6(2011) 2595-2600
Water droplet motion control on superhydrophobic surfaces: Exploiting the Wenzel-to-Cassie transition
Langmuir 27, 6(2011) 2595-2600
Lu H, Fu L, Jolley G, Tan H, Rao Tatavarti S, Jagadish C
Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells
Applied Physics Letters 98, 18(2011) 183509/1-3
Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells
Applied Physics Letters 98, 18(2011) 183509/1-3
McKerracher I, Wong-Leung J, Jolley G, Fu L, Tan H, Jagadish C
Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors
IEEE Journal of Quantum Electronics 47, 5(2011) 577-590
Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors
IEEE Journal of Quantum Electronics 47, 5(2011) 577-590
Du S, Fu L, Tan H, Jagadish C
Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells
Semiconductor Science and Technology 25, 5(2010) 7
Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells
Semiconductor Science and Technology 25, 5(2010) 7
Hakkarainen T, Douheret O, Anand S, Fu L, Tan H, Jagadish C
Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy
Applied Physics Letters 97, 4(2010) 3
Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy
Applied Physics Letters 97, 4(2010) 3
Jolley G, Fu L, Tan H, Jagadish C
The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Nanoscale 2, 7(2010) 1128-1133
The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Nanoscale 2, 7(2010) 1128-1133
Jolley G, Lu H, Fu L, Tan H, Jagadish C
Electron-hole recombination properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage
Applied Physics Letters 97, 12(2010) 3
Electron-hole recombination properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage
Applied Physics Letters 97, 12(2010) 3
Liu D, Hattori H, Fu L, Tan H, Jagadish C
Increasing the coupling efficiency of a microdisk laser to waveguides by using well designed spiral structures
Journal of Applied Physics 107, 4(2010) 043105-1 - 043105-8
Increasing the coupling efficiency of a microdisk laser to waveguides by using well designed spiral structures
Journal of Applied Physics 107, 4(2010) 043105-1 - 043105-8
Liu D, Hattori H, Fu L, Tan H, Jagadish C
The temperature dependence of InGaAs single-wavelength quantum well and multi-wavelength quantum dot square resonator microlasers
Journal of Physics D: Applied Physics 43, 13(2010) 135102/ 1-6
The temperature dependence of InGaAs single-wavelength quantum well and multi-wavelength quantum dot square resonator microlasers
Journal of Physics D: Applied Physics 43, 13(2010) 135102/ 1-6
McKerracher I, Fu L, Tan H, Jagadish C
Thermal expansion coefficients and composition of sputter-deposited silicon oxynitride thin films
Journal of Physics D: Applied Physics 43, 33(2010) 8
Thermal expansion coefficients and composition of sputter-deposited silicon oxynitride thin films
Journal of Physics D: Applied Physics 43, 33(2010) 8
Jolley G, Fu L, Tan H, Jagadish C
Properties of In0.5Ga0.5As/GaAs/ Al0.2Ga0.8 As quantum-dots-in-a-well infrared photodetectors
Journal of Physics D: Applied Physics 42, 9(2009) 8
Properties of In0.5Ga0.5As/GaAs/ Al0.2Ga0.8 As quantum-dots-in-a-well infrared photodetectors
Journal of Physics D: Applied Physics 42, 9(2009) 8
Jolley G, Xiao B, Fu L, Tan H, Jagadish C
Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Journal of Physics D: Applied Physics 42, 11(2009) 5
Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Journal of Physics D: Applied Physics 42, 11(2009) 5
Liu D, Hattori H, Fu L, Tan H, Jagadish C
Single-mode operation of a large optically pumped triangular laser with lateral air trenches
Journal of the Optical Society of America B 26, 7(2009) 1417-1422
Single-mode operation of a large optically pumped triangular laser with lateral air trenches
Journal of the Optical Society of America B 26, 7(2009) 1417-1422
Liu D, Hattori H, Fu L, Tan H, Jagadish C
Coupling Analysis of GaAs-Based Microdisk Lasers With Different External Claddings
Journal of Lightwave Technology 27, 22(2009) 5090-5098
Coupling Analysis of GaAs-Based Microdisk Lasers With Different External Claddings
Journal of Lightwave Technology 27, 22(2009) 5090-5098
Buda M, Iordache G, Mokkapati S, Fu L, Jolley G, Tan H, Jagadish C, Buda M
Analytical expression for the quantum dot contribution to the quasi static capacitance for conduction band characterization
Journal of Applied Physics 104, 2(2008) 1-11
Analytical expression for the quantum dot contribution to the quasi static capacitance for conduction band characterization
Journal of Applied Physics 104, 2(2008) 1-11
Castro-Camus E, Fu L, Lloyd-Hughes J, Tan H, Jagadish C, Johnston M
Photoconductive response correction for detectors of terahertz radiation
Journal of Applied Physics 104, 053113(2008) 1-7
Photoconductive response correction for detectors of terahertz radiation
Journal of Applied Physics 104, 053113(2008) 1-7
Chen H, Chen Y, Liu Y, Fu L, Huang C, Llewellyn D
Over 1.0 mm-long boron nitride nanotubes
Chemical Physics Letters 463, 1-3(2008) 130-133
Over 1.0 mm-long boron nitride nanotubes
Chemical Physics Letters 463, 1-3(2008) 130-133
Chen H, Zhang H, Fu L, Chen Y, Williams J, Yu C, Yu D
Nano Au-decorated boron nitride nanotubes: Conductance modification and field-emission enhancement
Applied Physics Letters 92, 243105(2008) 1-3
Nano Au-decorated boron nitride nanotubes: Conductance modification and field-emission enhancement
Applied Physics Letters 92, 243105(2008) 1-3
Fu L, Li Q, Kuffner P, Jolley G, Gareso P, Tan H, Jagadish C
Two-color InGaAs/GaAs quantum dot infrared photodetectors by selective area interdiffusion
Applied Physics Letters 93, 1(2008) 1-3
Two-color InGaAs/GaAs quantum dot infrared photodetectors by selective area interdiffusion
Applied Physics Letters 93, 1(2008) 1-3
Jolley G, Fu L, Tan H, Jagadish C
Effects of well thickness on the spectral properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Applied Physics Letters 92, 19(2008) 1-3
Effects of well thickness on the spectral properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Applied Physics Letters 92, 19(2008) 1-3
Jolley G, Fu L, Tan H, Jagadish C
Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors
Journal of Physics D: Applied Physics 41, 215101(2008) 1-7
Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors
Journal of Physics D: Applied Physics 41, 215101(2008) 1-7
Barik S, Fu L, Tan H, Jagadish C
Impurity-free disordering of InAs/InP quantum dots
Applied Physics Letters 90(2007) 243114 1-3
Impurity-free disordering of InAs/InP quantum dots
Applied Physics Letters 90(2007) 243114 1-3
Castro-Camus E, Lloyd-Hughes J, Fu L, Tan H, Jagadish C, Johnston M
An ion-implanted InP receiver for polarization resolved terahertz spectroscopy
Optics Express 15, 11(2007) 1-11
An ion-implanted InP receiver for polarization resolved terahertz spectroscopy
Optics Express 15, 11(2007) 1-11
Chen Y, Fu L, Chen Y, Zou J, Li J, Duan W
Tunable Electric Conductivities of Au-Doped Boron Nitride Nanotubes
NANO 2, 6(2007) 1-6
Tunable Electric Conductivities of Au-Doped Boron Nitride Nanotubes
NANO 2, 6(2007) 1-6
Fu L, McKerracher I, Tan H, Jagadish C, Vukmirovic N, Harrison P
Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition
Applied Physics Letters 91(2007) 073515 1-3
Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition
Applied Physics Letters 91(2007) 073515 1-3
Gareso P, Buda M, Fu L, Tan H, Jagadish C
Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures
Semiconductor Science and Technology 22(2007) 988-992
Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures
Semiconductor Science and Technology 22(2007) 988-992
Jolley G, Fu L, Tan H, Jagadish C
Influence of quantum well and barrier composition on the spectral behavior in InGasAs quantum dots-in-a-well infrared photodetectors
Applied Physics Letters 91(2007) 173508 1-3
Influence of quantum well and barrier composition on the spectral behavior in InGasAs quantum dots-in-a-well infrared photodetectors
Applied Physics Letters 91(2007) 173508 1-3
Mokkapati S, Du S, Buda M, Fu L, Tan H, Jagadish C
Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
Nanoscale Research Letters 2(2007) 550-553
Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
Nanoscale Research Letters 2(2007) 550-553
Drozdowicz-Tomsia K, Goldys E, Fu L, Jagadish C
Doping Effect on Dark Currents in In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-organic Chemical Vapor Deposition
Applied Physics Letters 89, 11(2006) 113510-1-3
Doping Effect on Dark Currents in In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-organic Chemical Vapor Deposition
Applied Physics Letters 89, 11(2006) 113510-1-3
Fu L, Tan H, McKerracher I, Wong-Leung J, Jagadish C, Vukmirovic N, Harrison P
Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors
Journal of Applied Physics 99, 11(2006) 114517-1-8
Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors
Journal of Applied Physics 99, 11(2006) 114517-1-8
Gareso P, Buda M, Fu L, Tan H, Jagadish C, Dao L, Wen X, Hannaford P
Proton Irradiation-induced Intermixing in InxGa1-xAs/InP Quantum Wells - the Effect of In Composition
Semiconductor Science and Technology 21(2006) 1441-1446
Proton Irradiation-induced Intermixing in InxGa1-xAs/InP Quantum Wells - the Effect of In Composition
Semiconductor Science and Technology 21(2006) 1441-1446
Huang S, Chen Z, Bai L, Chen X, Tan H, Fu L, Fraser M, Jagadish C
Micro-photoluminescence Confocal Mapping of Single V-grooved GaAs Quantum Wire
Chinese Physics Letters 23, 12(2006) 3341-3344
Micro-photoluminescence Confocal Mapping of Single V-grooved GaAs Quantum Wire
Chinese Physics Letters 23, 12(2006) 3341-3344
Huang S, Chen Z, Wang F, Shen S, Tan H, Fu L, Fraser M, Jagadish C
Carrier Transfer and Magneto-transport in Single Modulation-doped V-grooved Quantum Wire modified by Ion Implantation
Journal of Luminescence 119-120(2006) 198-203
Carrier Transfer and Magneto-transport in Single Modulation-doped V-grooved Quantum Wire modified by Ion Implantation
Journal of Luminescence 119-120(2006) 198-203
Lloyd-Hughes J, Merchant S, Fu L, Tan H, Jagadish C, Castro-Camus E, Johnston M
Influence of Surface Passivation on Ultrafast Carrier Dynamics and Terahertz Radiation Generation in GaAs
Applied Physics Letters 89, 23(2006) 232201-1-3
Influence of Surface Passivation on Ultrafast Carrier Dynamics and Terahertz Radiation Generation in GaAs
Applied Physics Letters 89, 23(2006) 232201-1-3
Siegert J, Marcinkevicius S, Fu L, Jagadish C
Recombination Properties of Si-doped InGaAs/GaAs Quantum Dots
Nanotechnology 17(2006) 5373-5377
Recombination Properties of Si-doped InGaAs/GaAs Quantum Dots
Nanotechnology 17(2006) 5373-5377
Tan H, Sears K, Mokkapati S, Fu L, Kim Y, McGowan P, Buda M, Jagadish C
Quantum Dots and Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 12, 6(2006) 1242-1254
Quantum Dots and Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 12, 6(2006) 1242-1254
Fu L, McGowan P, Sears K, Tan H, Jagadish C
In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition
IEEE Electron Device Letters 26, 9(2005) 628-630
In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition
IEEE Electron Device Letters 26, 9(2005) 628-630
Fu L, McGowan P, Tan H, Jagadish C, Reece P, Gal M
Study of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration
IEE Proceedings - Circuits, Devices and Systems 152, 5(2005) 491-496
Study of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration
IEE Proceedings - Circuits, Devices and Systems 152, 5(2005) 491-496
Jagadish C, Fu L
InGaP/GaAs negative differential resistance heterojunction bipolar transistor with a new structure
Journal of Environmental Chemical Engineering 26, 9(2005) 1783-1788
InGaP/GaAs negative differential resistance heterojunction bipolar transistor with a new structure
Journal of Environmental Chemical Engineering 26, 9(2005) 1783-1788
Gao Q, Tan H, Fu L, Jagadish C
Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots
Applied Physics Letters 84, 24(2004) 4950-4952
Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots
Applied Physics Letters 84, 24(2004) 4950-4952
Gareso P, Buda M, Fu L, Tan H, Jagadish C
Supression of Thermal Atomic Interdiffusion in C-doped InGaAs/AIGaAs Quantum Well Laser Structures using TiO2 Dielectric Layers
Applied Physics Letters 85, 23(2004) 5583-5585
Supression of Thermal Atomic Interdiffusion in C-doped InGaAs/AIGaAs Quantum Well Laser Structures using TiO2 Dielectric Layers
Applied Physics Letters 85, 23(2004) 5583-5585
Buda M, Hay J, Tan H, Fu L, Jagadish C, Reece P, Gal M
Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures
Journal of the Electrochemical Society 150, 8(2003) G481-G487
Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures
Journal of the Electrochemical Society 150, 8(2003) G481-G487
Buda M, Tan H, Fu L, Josyula L, Jagadish C
Improvement of the Kink-free Operation in Ridge-waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge
IEEE Photonics Technology Letters 15, 12(2003) 1686-1688
Improvement of the Kink-free Operation in Ridge-waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge
IEEE Photonics Technology Letters 15, 12(2003) 1686-1688
Fu L, McGowan P, Tan H, Jagadish C, Reece P, Gal M
Suppression of Interdiffusion in InGaAs/GaAs Quantum Dots using Dielectric Layer of Titanium Dioxide
Applied Physics Letters 82, 16(2003) 2613-2615
Suppression of Interdiffusion in InGaAs/GaAs Quantum Dots using Dielectric Layer of Titanium Dioxide
Applied Physics Letters 82, 16(2003) 2613-2615
Sears K, Buda M, Wong-Leung J, Fu L, Jagadish C, Stiff-Roberts A, Bhattacharya P
Influence of Rapid Thermal Annealing on a 30 Stack InAs/GaAs Quantum Dot Infrared Photodetector
Journal of Applied Physics 94, 8(2003) 5283-5289
Influence of Rapid Thermal Annealing on a 30 Stack InAs/GaAs Quantum Dot Infrared Photodetector
Journal of Applied Physics 94, 8(2003) 5283-5289
Deenapanray P, Gong B, Lamb R, Martin A, Fu L, Tan H, Jagadish C
Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers
Applied Physics Letters 80, 23(2002) 4351-4353
Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers
Applied Physics Letters 80, 23(2002) 4351-4353
Fu L, Heijden R, Tan H, Jagadish C, Dao L, Gal M
Study of Intermixing in a GaAs/AlGaAs Quantum-well Structure using Dope Spin-on Silica Layers
Applied Physics Letters 80, 7(2002) 1171-1173
Study of Intermixing in a GaAs/AlGaAs Quantum-well Structure using Dope Spin-on Silica Layers
Applied Physics Letters 80, 7(2002) 1171-1173
Fu L, Wong-Leung J, Deenapanray P, Tan H, Jagadish C, Gong B, Lamb R, Cohen R, Reichert W, Dao L, Gal M
Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide
Journal of Applied Physics 92, 7(2002) 3579-3583
Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide
Journal of Applied Physics 92, 7(2002) 3579-3583
Dao L, Gal M, Fu L, Tan H, Jagadish C
Possibility of improved frequency response from intermixed quantum-well devices
Superlattices and Microstructures 29, 2(2001) 105-110
Possibility of improved frequency response from intermixed quantum-well devices
Superlattices and Microstructures 29, 2(2001) 105-110
Fu L, Tan H, Jagadish C, Li N, Li N, Liu Q, Lu W, Shen S
Tuning the detection wavelength of quantum-well infrared photodetectors by single-high energy implantation
Applied Physics Letters 78, 1(2001) 10-12
Tuning the detection wavelength of quantum-well infrared photodetectors by single-high energy implantation
Applied Physics Letters 78, 1(2001) 10-12
Fu L, Tan H, Jagadish C, Li N, Li N, Liu Q, Lu W, Shen S
Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing
Infrared Physics and Technology 42(2001) 171-175
Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing
Infrared Physics and Technology 42(2001) 171-175
Li N, Fu L, Li N, Chan Y, Lu W, Shen S, Tan H, Jagadish C
The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
Journal of Crystal Growth 222(2001) 786-790
The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
Journal of Crystal Growth 222(2001) 786-790
Deenapanray P, Fu L, Petravic M, Jagadish C, Gong B, Lamb R
Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells
Surface and Interface Analysis 29(2000) 754-760
Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells
Surface and Interface Analysis 29(2000) 754-760
Deenapanray P, Tan H, Fu L, Jagadish C
Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
Electrochemical and Solid-State Letters 3(2000) 196-199
Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
Electrochemical and Solid-State Letters 3(2000) 196-199
Fu L, Deenapanray P, Tan H, Jagadish C, Dao L, Gal M
Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing
Applied Physics Letters 76(2000) 837-839
Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing
Applied Physics Letters 76(2000) 837-839
Liu Q, Li N, Lu W, Li N, Yuan X, Shen S, Fu L, Tan H, Jagadish C
Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing
Japanese Journal of Applied Physics 39(2000) 1687-1689
Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing
Japanese Journal of Applied Physics 39(2000) 1687-1689
ARIES T, Fu L, Tan H, Jagadish C
Application of high energy implantation in tuning the detection wavelength of quantum well infrared photodetectors
Journal of Environmental Chemical Engineering 1(2000) 88-89
Application of high energy implantation in tuning the detection wavelength of quantum well infrared photodetectors
Journal of Environmental Chemical Engineering 1(2000) 88-89
Dou H, Fu L, Jagadish C, Tan H
Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector
Journal of Environmental Chemical Engineering 19, 1(2000) 25-28
Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector
Journal of Environmental Chemical Engineering 19, 1(2000) 25-28
Dou H, Tan H, Fu L, Jagadish C
Performance comparison of GaAs/AlGaAs quantum well infrared photodetectors grown by MOCVD and MBE
Journal of Environmental Chemical Engineering 21, 5(2000) 441-444
Performance comparison of GaAs/AlGaAs quantum well infrared photodetectors grown by MOCVD and MBE
Journal of Environmental Chemical Engineering 21, 5(2000) 441-444
Fu L, Tan H, Johnston M, Gal M, Jagadish C
Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers
Journal of Applied Physics 85(1999) 6786-6789
Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers
Journal of Applied Physics 85(1999) 6786-6789
Johnston M, Gal M, Chen Z, Liu Q, Li N, Lu W, Shen H, Fu L, Tan H, Jagadish C, Li N
Interdiffused quantum well infrared photodetector tuning for colour sensitive arrays
Applied Physics Letters 75(1999) 923-925
Interdiffused quantum well infrared photodetector tuning for colour sensitive arrays
Applied Physics Letters 75(1999) 923-925
Fu L, Tan H, Jagadish C
Interdiffused quantum-well infrared photodetectors for color sensitive arrays
Applied Physics Letters 75, 7(1999) 923-925
Interdiffused quantum-well infrared photodetectors for color sensitive arrays
Applied Physics Letters 75, 7(1999) 923-925
Fu L, Tan H, Jagadish C
Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation
Griffith Asia Quarterly (1999) 355-357
Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation
Griffith Asia Quarterly (1999) 355-357
Fu L, Tan H, Jagadish C, Gal M
Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices
Griffith Asia Quarterly (1999) 352-354
Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices
Griffith Asia Quarterly (1999) 352-354
Jagadish C, Fu L
Inter-facet noise correlation measurement as a diagnostic tool for semiconductor laser studies
Griffith Asia Quarterly (1999) 236-239
Inter-facet noise correlation measurement as a diagnostic tool for semiconductor laser studies
Griffith Asia Quarterly (1999) 236-239
Tan H, Fu L, Jagadish C
Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence
Griffith Asia Quarterly (1999) 187-190
Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence
Griffith Asia Quarterly (1999) 187-190
Fu L, Tan H, Jagadish C
Improved carrier collection in intermixed InGaAs/GaAs quantum wells
Applied Physics Letters 73, 23(1998) 3408-3410
Improved carrier collection in intermixed InGaAs/GaAs quantum wells
Applied Physics Letters 73, 23(1998) 3408-3410
Conference paper
Wei S, Li Z, Murugappan K, Li Z, Zhang F, Lysevych M, Tan H, Jagadish C, Tricoli A, Fu L
Self-Powered Room Temperature Nanowire Array NO2 Sensor
IEEE Nanotechnology Materials and Devices Conference (NMDC) (2023) 662-663
Self-Powered Room Temperature Nanowire Array NO2 Sensor
IEEE Nanotechnology Materials and Devices Conference (NMDC) (2023) 662-663
Li Z, Tan H, Jagadish C, Fu L
An Efficient Workflow of Modeling Single-Nanowire Based Single-Photon Avalanche Detectors
International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) (2022) 121-122
An Efficient Workflow of Modeling Single-Nanowire Based Single-Photon Avalanche Detectors
International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) (2022) 121-122
Peng K, Jevtics D, Zhang F, Sterzl S, Damry D, Rothmann M, Guilhabert B, Strain M, Tan H, Herz L, Fu L, Dawson M, Hurtado A, Jagadish C, Johnston M
Polarization-resolved Terahertz Time-domain Spectroscopy Enabled by Nanowire Sensor Technology
Optical Sensors and Sensing Congress 2022 (2022) SM3C.5
Polarization-resolved Terahertz Time-domain Spectroscopy Enabled by Nanowire Sensor Technology
Optical Sensors and Sensing Congress 2022 (2022) SM3C.5
Peng K, Jevtics D, Zhang F, Sterzl S, Damry D, Rothmann M, Guilhabert B, Strain M, Tan H, Herz L, Herz L, Fu L, Dawson M, Hurtado A, Jagadish C, Johnston M, Johnston M
Nanowire Sensors Facilitate Polarization Sensitive Terahertz Spectroscopy
47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) (2022)
Nanowire Sensors Facilitate Polarization Sensitive Terahertz Spectroscopy
47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) (2022)
Raj V, Zhu Y, Vora K, Fu L, Tan H, Jagadish C
Pushing limits of photovoltaics and photodetection using radial junction nanowire devices
2022 IEEE International Conference on Emerging Electronics (ICEE) (2022)
Pushing limits of photovoltaics and photodetection using radial junction nanowire devices
2022 IEEE International Conference on Emerging Electronics (ICEE) (2022)
Peng K, Jevtics D, Zhang F, Sterzl S, Damry D, Rothmann M, Guilhabert B, Strain M, Tan H, Herz L, Fu L, Dawson M, Hurtado A, Jagadish C
Terahertz Full-polarization-state Detection by Nanowires
Conference on Lasers and Electro-Optics Europe (CLEO EUROPE, 2021) (2021) 1-1
Terahertz Full-polarization-state Detection by Nanowires
Conference on Lasers and Electro-Optics Europe (CLEO EUROPE, 2021) (2021) 1-1
Peng K, Jevtics D, Zhang F, Sterzl S, Damry D, Rothmann M, Guilhabert B, Strain M, Tan H, Herz L, Fu L, Dawson M, Hurtado A, Jagadish C
Nanowires: A New Horizon for Polarization-resolved Terahertz Time-domain Spectroscopy
"2021 Conference on Lasers and Electro-Optics (CLEO)" (2021) 1-2
Nanowires: A New Horizon for Polarization-resolved Terahertz Time-domain Spectroscopy
"2021 Conference on Lasers and Electro-Optics (CLEO)" (2021) 1-2
Zhang F, Zhu Y, Li Z, Li L, Lu Y, Tan H, Lockrey M, Fu L, Jagadish C
High-speed InGaAs/lnP Quantum Well Nanowire Array Light Emitting Diodes at Telecommunication Wavelength
2021 IEEE Photonics Conference (IPC) (2021)
High-speed InGaAs/lnP Quantum Well Nanowire Array Light Emitting Diodes at Telecommunication Wavelength
2021 IEEE Photonics Conference (IPC) (2021)
Haque A, Morshed M, Li Z, Li L, Vora K, Miroshnichenko A, Xu L, Fu L, Hattori H
Broadband Metamaterial Absorbers: Gold and Tungsten Boride
META 2019: 10th International Conference on Metamaterials, Photonic Crystals and Plasmonics (2019) 1627-1628
Broadband Metamaterial Absorbers: Gold and Tungsten Boride
META 2019: 10th International Conference on Metamaterials, Photonic Crystals and Plasmonics (2019) 1627-1628
Li Z, Tan H, Jagadish C, Fu L
III-V Semiconductor Nanowires for Optoelectronic Applications
META 2019: 10th International Conference on Metamaterials, Photonic Crystals and Plasmonics (2019) 404-405
III-V Semiconductor Nanowires for Optoelectronic Applications
META 2019: 10th International Conference on Metamaterials, Photonic Crystals and Plasmonics (2019) 404-405
Boland J, Peng K, Baig S, Damry D, Parkinson P, Fu L, Tan H, Jagadish C, Herz L, Joyce H, Johnston M
The Route to Nanoscale Terahertz Technology: Nanowire-based Terahertz Detectors and Terahertz Modulators
43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018) 2018-September(2018) 2
The Route to Nanoscale Terahertz Technology: Nanowire-based Terahertz Detectors and Terahertz Modulators
43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018) 2018-September(2018) 2
Li Z, Trendafilov S, Allen M, Allen J, Alabadla A, Gao Q, Yuan X, Yang I, Caroff-Gaonac'h P, Tan H, Jagadish C, Fu L
Room temperature GaAsSb array photodetectors
1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018 (2018) 143-145
Room temperature GaAsSb array photodetectors
1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018 (2018) 143-145
Morshed M, Li Z, Olbricht B, Fu L, Haque A, Li L, Hattori H
Chromium for High Fluence Bowtie Nano-Antennas
31st Annual Conference of the IEEE Photonics Society, IPC 2018 (2018)
Chromium for High Fluence Bowtie Nano-Antennas
31st Annual Conference of the IEEE Photonics Society, IPC 2018 (2018)
Morshed M, Li Z, Olbricht B, Fu L, Haque A, Li L, Hattori H
Tungsten Refractory Plasmonic Material for High Fluence Bowtie Nano-antenna
7th International Conference on Computer and Communication Engineering, ICCCE 2018 (2018) 20-22
Tungsten Refractory Plasmonic Material for High Fluence Bowtie Nano-antenna
7th International Conference on Computer and Communication Engineering, ICCCE 2018 (2018) 20-22
Peng K, Parkinson P, Gao Q, Boland J, Li Z, Wang F, Wenas Y, Davies C, Fu L, Johnston M, Tan H, Jagadish C
Broadband single-nanowire photoconductive terahertz detectors
CLEO: Science and Innovations, CLEO_SI 2017 (2017) 2
Broadband single-nanowire photoconductive terahertz detectors
CLEO: Science and Innovations, CLEO_SI 2017 (2017) 2
Peng K, Parkinson P, Fu L, Gao Q, Jiang N, Guo Y, Wang F, Joyce H, Boland J, Tan H, Jagadish C, Johnston M
Single nanowire terahertz detectors
CLEO: Science and Innovations, CLEO_SI 2015 15, 1(2015) 206-210
Single nanowire terahertz detectors
CLEO: Science and Innovations, CLEO_SI 2015 15, 1(2015) 206-210
Zhong Z, Li Z, Fu L, Gao Q, Li Z, Peng K, Li L, Zhang G, Wang Z, Tan H, Jagadish C
InP single nanowire solar cells
Light, Energy and the Environment 2015 (2015)
InP single nanowire solar cells
Light, Energy and the Environment 2015 (2015)
Gao Q, Fu L, Wang F, Guo Y, Li Z, Peng K, Li L, Li Z, Wenas Y, Mokkapati S, Tan H, Jagadish C
Selective area epitaxial growth of InP nanowire array for solar cell applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 252-253
Selective area epitaxial growth of InP nanowire array for solar cell applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 252-253
Peng K, Parkinson P, Fu L, Gao Q, Jiang N, Guo Y, Wang F, Joyce H, Boland J, Johnston M, Tan H, Jagadish C
Single GaAs/AlGaAs Nanowire Photoconductive Terahertz Detectors
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 221-222
Single GaAs/AlGaAs Nanowire Photoconductive Terahertz Detectors
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 221-222
Wang F, Gao Q, Peng K, Guo Y, Li Z, Fu L, Smith L, Tan H, Jagadish C
Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 272-274
Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 272-274
Gao Q, Jiang N, Joyce H, Paiman S, Wong-Leung J, Lee Y, Fu L, Tan H, Jagadish C
Compound semiconductor nanowires for optoelectronic devices
10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 (2013) 1-2
Compound semiconductor nanowires for optoelectronic devices
10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 (2013) 1-2
Tan H, Jiang N, Saxena D, Lee Y, Mokkapati S, Fu L, Gao Q, Joyce H, Jagadish C
III-V nanowires for optoelectronic applications
International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting 58, 7(2013) 93-98
III-V nanowires for optoelectronic applications
International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting 58, 7(2013) 93-98
Gao Q, Tan H, Fu L, Parkinson P, Breuer S, Wong-Leung J, Jagadish C
InP Nanowires Grown by SA-MOVPE
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 45-46
InP Nanowires Grown by SA-MOVPE
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 45-46
Lee Y, Li Z, Fu L, Parkinson P, Vora K, Tan H, Jagadish C
Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 131-132
Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 131-132
Li Z, Hattori H, Karouta F, Tian J, Parkinson P, Fu L, Tan H, Jagadish C
Coupling of light from microdisk lasters to nano-antennas with nano-tapers
IEEE Photonics Conference (IPC 2012) (2012) 889-890
Coupling of light from microdisk lasters to nano-antennas with nano-tapers
IEEE Photonics Conference (IPC 2012) (2012) 889-890
Lu H, Fu L, Jolley G, Tan H, Jagadish C
Improved performance of InGaAs/GaAs Quantum Dot Solar Cells using Si-modulation doping
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 127-128
Improved performance of InGaAs/GaAs Quantum Dot Solar Cells using Si-modulation doping
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 127-128
Lysevych M, Tan H, Karouta F, Fu L, Jagadish C
Reduction of Gain-Saturation in Merged Beam Lasers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 189-190
Reduction of Gain-Saturation in Merged Beam Lasers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 189-190
Mokkapati S, Lu H, Turner S, Fu L, Tan H, Jagadish C
Plasmonics for III-V semiconductor solar cells
IEEE Photonics Conference (IPC 2012) (2012) 56-57
Plasmonics for III-V semiconductor solar cells
IEEE Photonics Conference (IPC 2012) (2012) 56-57
Sajewicz P, Fu L, Tan H, Vora K, Jagadish C
Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 137-138
Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 137-138
Tan H, Jiang N, Lee Y, Saxena D, Parkinson P, Gao Q, Fu L, Jagadish C
III-V nanowires for optoelectronic applications
5th International Conference on Computers and Devices for Communication, CODEC 2012 (2012) 1-3
III-V nanowires for optoelectronic applications
5th International Conference on Computers and Devices for Communication, CODEC 2012 (2012) 1-3
Turner S, Mokkapati S, Jolley G, Fu L, Tan H, Jagadish C
Dielectric Diffraction Gratings for Light-Trapping in InGaAs-GaAs Quantum Well Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 129-130
Dielectric Diffraction Gratings for Light-Trapping in InGaAs-GaAs Quantum Well Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 129-130
Wang H, Parkinson P, Tian J, Saxena D, Mokkapati S, Gao Q, Prasai P, Fu L, Karouta F, Tan H, Jagadish C
Optoelectronic properties of GaAs nanowire photodector
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 139-140
Optoelectronic properties of GaAs nanowire photodector
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 139-140
Fu L, Lu H, Mokkapati S, Jolley G, Tan H, Jagadish C
Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells
Photonics Society 2011 annual meeting (2011) 387-388
Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells
Photonics Society 2011 annual meeting (2011) 387-388
Jolley G, Fu L, Tan H, Jagadish C
Growth and confinement effects in III-V semiconductor nanostructures
Microoptics Conference (MOC 2011) (2011)
Growth and confinement effects in III-V semiconductor nanostructures
Microoptics Conference (MOC 2011) (2011)
Jolley G, Lu H, Fu L, Tan H, Rao Tatavarti S, Jagadish C
The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties
IEEE Photovoltaic Specialists Conference PVSC 2011 (2011) 513-516
The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties
IEEE Photovoltaic Specialists Conference PVSC 2011 (2011) 513-516
Du S, Fu L, Tan H, Jagadish C
Study of intermixing mechanism in AlInGaAs/InGaAs quantum well
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 47-48
Study of intermixing mechanism in AlInGaAs/InGaAs quantum well
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 47-48
Fu L, Jolley G, Lu H, Majid A, Tan H, Jagadish C
Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 716-717
Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 716-717
Headley C, Fu L, Parkinson P, Xu X, Lloyd-Hughes J, Jagadish C, Johnston M
Improved performance of GaAs-based terahertz emitters
35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 (2010)
Improved performance of GaAs-based terahertz emitters
35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 (2010)
Li Z, Hattori H, Fu L, Tan H, Jagadish C
High efficiency coupling of light from photonic wire lasers into nano-antennas
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 67-68
High efficiency coupling of light from photonic wire lasers into nano-antennas
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 67-68
Li Z, Hattori H, Fu L, Tan H, Jagadish C
High efficiency coupling of light from photonic wire lasers into nano-antennas
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 67-68
High efficiency coupling of light from photonic wire lasers into nano-antennas
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 67-68
Liu D, Hattori H, Fu L, Tan H, Jagadish C
Analysis of multi-wavelength photonic crystal single-defect laser arrays
23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (2010) 500-501
Analysis of multi-wavelength photonic crystal single-defect laser arrays
23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (2010) 500-501
Liu D, Hattori H, Fu L, Tan H, Jagadish C
Increasing the coupling efficiency of a microdisk laser to waveguides by using spiral structures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 69-70
Increasing the coupling efficiency of a microdisk laser to waveguides by using spiral structures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 69-70
Lu H, Fu L, Jolley G, Tan H, Rao Tatavarti S, Jagadish C
Temperature Dependence of Dark Current Properties of InGaAs/GaAs Quantum Dot Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 127-128
Temperature Dependence of Dark Current Properties of InGaAs/GaAs Quantum Dot Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 127-128
Majid A, Fu L, Jagadish C, Tan H
MOCVD grown quantum dot-in-a-well solar cells
11th International Symposium on Advanced Materials, ISAM-2009 442(2010) 398-403
MOCVD grown quantum dot-in-a-well solar cells
11th International Symposium on Advanced Materials, ISAM-2009 442(2010) 398-403
McKerracher I, Wong-Leung J, Jolley G, Fu L, Tan H, Jagadish C
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 2
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 2
Barik S, Fu L, Tan H, Jagadish C
Role of Stress on Impurity Free Disordering of Quantum Dots
IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008) (2008) 221-224
Role of Stress on Impurity Free Disordering of Quantum Dots
IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008) (2008) 221-224
Du S, Fu L, Tan H, Jagadish C
Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells
International Conference on Nanoscience and Nanotechnology (ICONN 2008) (2008) 32-35
Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells
International Conference on Nanoscience and Nanotechnology (ICONN 2008) (2008) 32-35
McKerracher I, Fu L, Tan H, Jagadish C
Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering
Nanoengineering: Fabrication, Properties, Optics, and Devices 2008 7039(2008) 70390U/1-10
Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering
Nanoengineering: Fabrication, Properties, Optics, and Devices 2008 7039(2008) 70390U/1-10
McKerracher I, Hattori H, Fu L, Tan H, Jagadish C
Photonic crystal-enhanced quantum dot infrared photodetectors
Nanoengineering: Fabrication, Properties, Optics, and Devices 2008 7039(2008) 70390S/1-11
Photonic crystal-enhanced quantum dot infrared photodetectors
Nanoengineering: Fabrication, Properties, Optics, and Devices 2008 7039(2008) 70390S/1-11
Fu L, McKerracher I, Tan H, Jagadish C
Thermal Annealing Study on InGaAs/GaAs Quantum Dot Infrared Photodetectors
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 493-496
Thermal Annealing Study on InGaAs/GaAs Quantum Dot Infrared Photodetectors
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 493-496
Jolley G, Fu L, Tan H, Jagadish C, Vukmirovic N, Harrison P
Quantum Dots-in-a-Well Infrared Photodetectors Grown by MOCVD
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 419-422
Quantum Dots-in-a-Well Infrared Photodetectors Grown by MOCVD
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 419-422
Fu L, Kuffner P, McKerracher I, Tan H, Jagadish C
Rapid Thermal Annealing Study of InGaAs/GaAs Quantum Dot Infrared Photodetectors grown by Metal-Organic Chemical Vapour Deposition
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005(2005) 228-229
Rapid Thermal Annealing Study of InGaAs/GaAs Quantum Dot Infrared Photodetectors grown by Metal-Organic Chemical Vapour Deposition
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005(2005) 228-229
Gao Q, Fu L, McGowan P, Mokkapati S, Buda M, Tan H, Jagadish C
Quantum Dot Optoelectronic Devices
Microoptics Conference (MOC 2005) (2005) J5-1-4
Quantum Dot Optoelectronic Devices
Microoptics Conference (MOC 2005) (2005) J5-1-4
Buda M, Tan H, Fu L, Josyula L, Jagadish C
Improvement of Kink-free Operation in InGaAs/GaAs/AlGaAs High Power, Ridge Waveguide Laser Diodes
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 25-28
Improvement of Kink-free Operation in InGaAs/GaAs/AlGaAs High Power, Ridge Waveguide Laser Diodes
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 25-28
Fu L, McGowan P, Tan H, Jagadish C, Reece P, Gal M
Suppression of Interdiffusion in In0.5Ga0.5As/GaAs Quantum Dots
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 503-506
Suppression of Interdiffusion in In0.5Ga0.5As/GaAs Quantum Dots
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 503-506
Buda M, Fu L, Hay J, Deenapanray P, Tan H, Jagadish C, Reece P, Gal M
Impurity Free Intermixing for Optoelectronic Device Integration
Integrated Optoelectronics (2002) 89-105
Impurity Free Intermixing for Optoelectronic Device Integration
Integrated Optoelectronics (2002) 89-105
Conference written presentation
Gao Q, Fu L, Li L, Vora K, Li Z, Wang F, Li Z, Wenas Y, Mokkapati S, Karouta F, Tan H, Jagadish C
Direct Characterization of Axial p-n Junctions for InP Nanowire Array Solar Cells Using Electron Beam-Induced Current
Light, Energy and the Environment 2015 (2015)
Direct Characterization of Axial p-n Junctions for InP Nanowire Array Solar Cells Using Electron Beam-Induced Current
Light, Energy and the Environment 2015 (2015)
Journal short contribution
Fu L, Jagadish C
Perspectives on III-V Semiconductor Nanowire Optoelectronics and Beyond [Highlights]
IEEE Nanotechnology Magazine 17, 2(2023) 5-7
Perspectives on III-V Semiconductor Nanowire Optoelectronics and Beyond [Highlights]
IEEE Nanotechnology Magazine 17, 2(2023) 5-7
Journal article (non-refereed)
Li Z, Yuan X, Gao Q, Yang I, Li L, Caroff-Gaonac'h P, Allen M, Allen J, Tan H, Jagadish C, Fu L
Erratum: In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse (vol 31, 244002, 2020)
Nanotechnology 31, 34(2020)
Erratum: In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse (vol 31, 244002, 2020)
Nanotechnology 31, 34(2020)
Journal Editor
Fu L, Tan H, Jagadish C
Nanostructured photovoltaics PREFACE
Journal of Physics D: Applied Physics 46, 2(2013) 1
Nanostructured photovoltaics PREFACE
Journal of Physics D: Applied Physics 46, 2(2013) 1
Listing does not show publications before 2000
When dialing an ANU extension from outside the university:
- (02) 612 XXXXX (within Australia)
- +61 2 612 XXXXX (outside Australia)
Anti-Spam notice: The email addresses from this directory are made available to support the academic and business activities of ANU. These email addresses are not published as an invitation to receive unsolicited commercial messages or 'spam' and we do not consent to receipt of such materials. Any messages that are received which contravenes this policy is strictly prohibited, and is also a breach of the Spam Act 2003. The University reserves the right to recover all costs incurred in the event of breach of this policy.
Updated: 15 May 2024/ Responsible Officer: Director, RSPE/ Page Contact: Physics Webmaster