Professor Chennupati Jagadish
Position |
Distinguished Professor |
---|---|
Department |
Electronic Materials Engineering |
Qualifications |
B.Sc., M.Sc(Tech)., M.Phil., Ph.D., FAA, MNAE (US), FTSE, FTWAS, FNAI, FEurASci, FNA, FNAE, FASc, FAPAS, FIEEE, FAPS, FMRS, FOSA, FInstP, FAIP, FIoN, FSPIE, FECS, FIET, FAAAS, FAVS, FEMA, FAPAM |
Office phone |
50363 |
Email |
|
Office |
Physics New 3 07 |
Webpage |
https://physics.anu.edu.au/people/p... |
Curriculum vitae |
Jagadish CV (177KB PDF) |
Publication list |
Jagadish publication list (571KB PDF) |
Research publications
Book editor
Lourdudoss S, Chen R, Jagadish C (Eds.)
Silicon Photonics, Volume 99
Academic Press, Cambridge, United States (2018) 228
Silicon Photonics, Volume 99
Academic Press, Cambridge, United States (2018) 228
Lee E, Eldada L, Razeghi M, Jagadish C (Eds.)
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011)
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011)
Christen J, Jagadish C, Look D, Yao T, Bertram F (Eds.)
Zinc Oxide and Related Materials (Volume 957)
Materials Research Society, USA (2007)
Zinc Oxide and Related Materials (Volume 957)
Materials Research Society, USA (2007)
Book chapter
Chen X, Jagadish C, Ye J
Fundamental Properties and Power Electronic Device Progress of Gallium Oxide
Oxide Electronics
Wiley Online Library, Hoboken, New Jersey (2021) 235-352
Fundamental Properties and Power Electronic Device Progress of Gallium Oxide
Oxide Electronics
Wiley Online Library, Hoboken, New Jersey (2021) 235-352
Li Z, Jagadish C, Fu L
III-V Compound Semiconductor Nanowire Solar Cells
Atomic and Nano Scale Materials for Advanced Energy Conversion
Wiley Online Library, Hoboken, New Jersey (2021) 531-558
III-V Compound Semiconductor Nanowire Solar Cells
Atomic and Nano Scale Materials for Advanced Energy Conversion
Wiley Online Library, Hoboken, New Jersey (2021) 531-558
Lourdudoss S, Bowers J, Jagadish C
SEMICONDUCTORS AND SEMIMETALS Future Directions in Silicon Photonics Preface
The Impact, Legitimacy and Effectiveness of EU Counter-Terrorism
Taylor and Francis Inc., United Kingdom (2019) XV-XVIII
SEMICONDUCTORS AND SEMIMETALS Future Directions in Silicon Photonics Preface
The Impact, Legitimacy and Effectiveness of EU Counter-Terrorism
Taylor and Francis Inc., United Kingdom (2019) XV-XVIII
Mokkapati S, Jagadish C
Nanowires for Energy Applications PREFACE
Nanowires for Energy Applications
Academic Press - Elsevier, San Diego (2018) XI-XII
Nanowires for Energy Applications PREFACE
Nanowires for Energy Applications
Academic Press - Elsevier, San Diego (2018) XI-XII
Kang J, Gao Q, Tan H, Joyce H, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J, Jagadish C
Growth and characterization of GaAs nanowires grown on Si substrates
Nanoelectronic Device Applications Handbook
CRC Press, Boca Raton (2017) 603-614
Growth and characterization of GaAs nanowires grown on Si substrates
Nanoelectronic Device Applications Handbook
CRC Press, Boca Raton (2017) 603-614
Lunardi L, Mokkapati S, Jagadish C
Optoelectronic Devices
Guide to State-of-the-Art Electron Devices
John Wiley & Sons Inc, UK (2013) 265-274
Optoelectronic Devices
Guide to State-of-the-Art Electron Devices
John Wiley & Sons Inc, UK (2013) 265-274
Davis J, Jagadish C
ZnO/MgZnO quantum wells
GaN and ZnO-based Materials and Devices
Springer-Verlag Berlin Heidelberg, London (2012) 413-434
ZnO/MgZnO quantum wells
GaN and ZnO-based Materials and Devices
Springer-Verlag Berlin Heidelberg, London (2012) 413-434
Davis J, Jagadish C
Semiconductors and their nanostructures
Optical Techniques for Solid-State Materials Characterization
CRC Press LLC, Boca Raton Florida USA (2012) 39-78
Semiconductors and their nanostructures
Optical Techniques for Solid-State Materials Characterization
CRC Press LLC, Boca Raton Florida USA (2012) 39-78
Fu L, Mokkapati S, Barik S, Buda M, Tan H, Jagadish C
Disordering of quantum structures for optoelectronic device integration
Comprehensive Semiconductor Science and Technology
Elsevier, Amsterdam Netherlands (2011) 584-621
Disordering of quantum structures for optoelectronic device integration
Comprehensive Semiconductor Science and Technology
Elsevier, Amsterdam Netherlands (2011) 584-621
Mokkapati S, Tan H, Jagadish C
Quantum Dot Integrated Optoelectronic Devices
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011) 11.1-11.34
Quantum Dot Integrated Optoelectronic Devices
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011) 11.1-11.34
Sears K, Mokkapati S, Tan H, Jagadish C
In(Ga)As/GaAs quantum dots grown by MOCVD for optoelectronic device applications
Self-Assembled Quantum Dots
Springer, New York (2008) 359-403
In(Ga)As/GaAs quantum dots grown by MOCVD for optoelectronic device applications
Self-Assembled Quantum Dots
Springer, New York (2008) 359-403
Coleman V, Bradby J, Jagadish C, Phillips M
A Comparison of the Mechanical properties and the impact of contact induced damage in a- and c- Axis ZnO Single crystals
Zinc Oxide and Related Materials (Volume 957)
Materials Research Society, USA (2007) 213-218
A Comparison of the Mechanical properties and the impact of contact induced damage in a- and c- Axis ZnO Single crystals
Zinc Oxide and Related Materials (Volume 957)
Materials Research Society, USA (2007) 213-218
Journal article
Huang X, Horder J, Wong W, Wang N, Bian Y, Yamamura K, Aharonovich I, Jagadish C, Tan H
Scalable Bright and Pure Single Photon Sources by Droplet Epitaxy on InP Nanowire Arrays
ACS Nano 18, 7(2024) 5581 - 5589
Scalable Bright and Pure Single Photon Sources by Droplet Epitaxy on InP Nanowire Arrays
ACS Nano 18, 7(2024) 5581 - 5589
Li Z, Tan H, Jagadish C, Fu L
An efficient modeling workflow for high-performance nanowire single-photon avalanche detector
Nanotechnology 35, 17(2024)
An efficient modeling workflow for high-performance nanowire single-photon avalanche detector
Nanotechnology 35, 17(2024)
Raj V, Haggren T, Osorio Mayon Y, Jagadish C, Tan H
21.2% GaAs Solar Cell Using Bilayer Electron Selective Contact
Solar RRL 8, 5(2024) 2300889
21.2% GaAs Solar Cell Using Bilayer Electron Selective Contact
Solar RRL 8, 5(2024) 2300889
Riaz A, Fusco Z, Kremer F, Gupta B, Zhang D, Jagadish C, Tan H, Karuturi S
Hierarchically Multiscale Vertically Oriented NiFeCo Nanoflakes for Efficient Electrochemical Oxygen Evolution at High Current Densities
Advanced Energy Materials 14, 1(2024) 2303001
Hierarchically Multiscale Vertically Oriented NiFeCo Nanoflakes for Efficient Electrochemical Oxygen Evolution at High Current Densities
Advanced Energy Materials 14, 1(2024) 2303001
Su Z, Yan J, Wang N, Jagadish C, Neshev D, Tan H
Tunable Enhanced Second-Harmonic Generation in InP-InAsP Quantum Well Nanomembranes
Nano Micro Small (2024)
Tunable Enhanced Second-Harmonic Generation in InP-InAsP Quantum Well Nanomembranes
Nano Micro Small (2024)
Wei S, Li Z, Murugappan K, Li Z, Lysevych M, Vora K, Tan H, Jagadish C, Karawdeniya B, Nolan C, Tricoli A, Fu L
Nanowire Array Breath Acetone Sensor for Diabetes Monitoring
Advanced Science (2024) 2309481
Nanowire Array Breath Acetone Sensor for Diabetes Monitoring
Advanced Science (2024) 2309481
Adhikari S, Kremer F, Lysevych M, Jagadish C, Tan H
Core-shell GaN/AlGaN nanowires grown by selective area epitaxy
Nanoscale Horizons 8, 4(2023) 530-542
Core-shell GaN/AlGaN nanowires grown by selective area epitaxy
Nanoscale Horizons 8, 4(2023) 530-542
Aman G, Lysevych M, Tan H, Jagadish C, Schmitzer H, Franzl M, Cahay M, Wagner H
Lasing in Zn-doped GaAs nanowires on an iron film
Nanotechnology 34, 44(2023) 1-9
Lasing in Zn-doped GaAs nanowires on an iron film
Nanotechnology 34, 44(2023) 1-9
Bera K, Chugh D, Bandopadhyay A, Tan H, Roy A, Jagadish C
Decoupling the roles of defects/impurities and wrinkles in thermal conductivity of wafer-scale hBN films
Journal of Applied Physics 134, 15(2023)
Decoupling the roles of defects/impurities and wrinkles in thermal conductivity of wafer-scale hBN films
Journal of Applied Physics 134, 15(2023)
Butson J, Sharma A, Tournet J, Wang Y, Tatavarti R, Zhao C, Jagadish C, Tan H, Karuturi S
Unlocking Ultra-High Performance in Immersed Solar Water Splitting with Optimised Energetics
Advanced Energy Materials 13, 40(2023) 1-10
Unlocking Ultra-High Performance in Immersed Solar Water Splitting with Optimised Energetics
Advanced Energy Materials 13, 40(2023) 1-10
Gopakumar Saraswathyvilasam A, Adhikari S, Gupta B, Balendhran S, Higashitarumizu N, Tournet J, Li L, Javey A, Crozier K, Karuturi S, Jagadish C, Tan H
Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition
Nanotechnology 34, 49(2023) 1-10
Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition
Nanotechnology 34, 49(2023) 1-10
Gupta B, Ismael M, Lee Y, Black L, Ma F, Hoex B, Jagadish C, Tan H, Karuturi S
Unveiling the Role of H2 Plasma for Efficient InP Solar Cells
Solar RRL 7, 6(2023) 1-10
Unveiling the Role of H2 Plasma for Efficient InP Solar Cells
Solar RRL 7, 6(2023) 1-10
Gupta B, Zhang D, Chen H, Jagadish C, Tan H, Karuturi S
Ferri-hydrite: A Novel Electron-Selective Contact Layer for InP Photovoltaic and Photoelectrochemical Cells
ACS Applied Materials and Interfaces 15, 38(2023) 44912â??44920
Ferri-hydrite: A Novel Electron-Selective Contact Layer for InP Photovoltaic and Photoelectrochemical Cells
ACS Applied Materials and Interfaces 15, 38(2023) 44912â??44920
Haggren T, Tan H, Jagadish C
III-V Thin Films for Flexible, Cost-Effective, and Emerging Applications in Optoelectronics and Photonics
Accounts of Materials Research 4, 12(2023) 1046â??1056
III-V Thin Films for Flexible, Cost-Effective, and Emerging Applications in Optoelectronics and Photonics
Accounts of Materials Research 4, 12(2023) 1046â??1056
Haggren T, Tournet J, Jagadish C, Tan H, Oksanen J
Strain-Engineered Multilayer Epitaxial Lift-Off for Cost-Efficient III-V Photovoltaics and Optoelectronics
ACS Applied Materials and Interfaces 15(2023) 1184 - 1191
Strain-Engineered Multilayer Epitaxial Lift-Off for Cost-Efficient III-V Photovoltaics and Optoelectronics
ACS Applied Materials and Interfaces 15(2023) 1184 - 1191
He J, Huang Z, Li Z, Wong W, Yu Y, Huanglong S, Li X, Fu L, Tan H, Jagadish C, Yuan X
Design of InAs nanosheet arrays for high-performance polarization-sensitive infrared photodetection
Journal of Physics D: Applied Physics 56, 1(2023)
Design of InAs nanosheet arrays for high-performance polarization-sensitive infrared photodetection
Journal of Physics D: Applied Physics 56, 1(2023)
Li C, Zhang X, Yi R, Li Z, Zhang F, Liu K, Gan X, Fu L, Xiao F, Zhao J, Tan H, Jagadish C
Low-Threshold Multiwavelength Plasmonic Nanolasing in an ?H?-Shape Cavity
Laser and Photonics Reviews 17, 10(2023) 2300187
Low-Threshold Multiwavelength Plasmonic Nanolasing in an ?H?-Shape Cavity
Laser and Photonics Reviews 17, 10(2023) 2300187
Li Z, Azimi Z, Li Z, Yu Y, Tan H, Jin W, Jagadish C, Wong-Leung J, Fu L
InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection
Nanoscale 15, -(2023) 10033 - 10041
InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection
Nanoscale 15, -(2023) 10033 - 10041
Li Z, He Z, Xi C, Zhang F, Huanglong S, Yu Y, Tan H, Jagadish C, Fu L
Review on III?V Semiconductor Nanowire Array Infrared Photodetectors
Advanced Materials Technologies 8, 13(2023)
Review on III?V Semiconductor Nanowire Array Infrared Photodetectors
Advanced Materials Technologies 8, 13(2023)
Liao J, Huang Z, Wu C, Gagrani N, Tan H, Jagadish C, Chen K, Lu T
Highly Localized Surface Plasmon Nanolasers via Strong Coupling
Nano Letters 23, 10(2023) 4359â??4366
Highly Localized Surface Plasmon Nanolasers via Strong Coupling
Nano Letters 23, 10(2023) 4359â??4366
Soo J, Narangari P, Jagadish C, Tan H, Karuturi S
Protocol for scalable top-down fabrication of InP nanopillars using a self-assembled random mask technique
STAR Protocols 4, 2(2023)
Protocol for scalable top-down fabrication of InP nanopillars using a self-assembled random mask technique
STAR Protocols 4, 2(2023)
Soo J, Riaz A, Kremer F, Brink F, Jagadish C, Tan H, Karuturi S
Cobalt modification of nickel-iron hydroxide electrocatalysts: a pathway to enhanced oxygen evolution reaction
Journal of Materials Chemistry A 11, 42(2023) 22941â??22950
Cobalt modification of nickel-iron hydroxide electrocatalysts: a pathway to enhanced oxygen evolution reaction
Journal of Materials Chemistry A 11, 42(2023) 22941â??22950
Tu C, Kaveh M, Franzl M, Gao Q, Tan H, Jagadish C, Schmitzer H, Wagner H
Polarization Conversion of Light Diffracted from InP Nanowire Photonic Crystal Arrays
Advanced Optical Materials 11, 8(2023) 2202342
Polarization Conversion of Light Diffracted from InP Nanowire Photonic Crystal Arrays
Advanced Optical Materials 11, 8(2023) 2202342
Wong W, Wang N, Esser B, Church S, Li L, Lockrey M, Aharonovich I, Parkinson P, Etheridge J, Jagadish C, Tan H
Bottom-up, Chip-Scale Engineering of Low Threshold, Multi-Quantum-Well Microring Lasers
ACS Nano 17, 15(2023) 15065 - 15076
Bottom-up, Chip-Scale Engineering of Low Threshold, Multi-Quantum-Well Microring Lasers
ACS Nano 17, 15(2023) 15065 - 15076
Zangeneh Kamali K, Xu L, Gagrani N, Tan H, Jagadish C, Miroshnichenko A, Neshev D, Rahmani M
Electrically programmable solid-state metasurfaces via flash localised heating
Light: Science & Applications 12, 1(2023)
Electrically programmable solid-state metasurfaces via flash localised heating
Light: Science & Applications 12, 1(2023)
Zhang X, Yi R, Zhao B, Li C, Li L, Li Z, Zhang F, Wang N, Zhang M, Fang L, Zhao J, Chen P, Lu W, Fu L, Tan H, Jagadish C, Gan X
Vertical Emitting Nanowire Vector Beam Lasers
ACS Nano 17, 11(2023) 10918-10924
Vertical Emitting Nanowire Vector Beam Lasers
ACS Nano 17, 11(2023) 10918-10924
Adhikari S, Lee Cheong Lem O, Kremer F, Vora K, Brink F, Lysevych M, Tan H, Jagadish C
Nonpolar Al x Ga1?x N/Al y Ga1?y N multiple quantum wells on GaN nanowire for UV emission
Nano Research 15, 8(2022) 7670 - 7680
Nonpolar Al
Nano Research 15, 8(2022) 7670 - 7680
Adhikari S, Lysevych M, Jagadish C, Tan H
Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters
Crystal Growth & Design 22, 9(2022) 5345-5353
Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters
Crystal Growth & Design 22, 9(2022) 5345-5353
Azimi Z, Gopakumar Saraswathyvilasam A, Li L, Kremer F, Lockrey M, Wibowo A, Nguyen H, Tan H, Jagadish C, Wong-Leung J
Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics
Advanced Optical Materials 10, 18(2022) 1-9
Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics
Advanced Optical Materials 10, 18(2022) 1-9
Bera K, Chugh D, Tan H, Roy A, Jagadish C
Non-thermal and thermal effects on mechanical strain in substrate-transferred wafer-scale hBN films
Journal of Applied Physics 132, 10(2022)
Non-thermal and thermal effects on mechanical strain in substrate-transferred wafer-scale hBN films
Journal of Applied Physics 132, 10(2022)
Gagrani N, Vora K, Adhikari S, Jiang Y, Jagadish C, Tan H
n-SnOx as a Transparent Electrode and Heterojunction for p-InP Nanowire Light Emitting Diodes
Advanced Optical Materials 10, 11(2022)
n-SnOx as a Transparent Electrode and Heterojunction for p-InP Nanowire Light Emitting Diodes
Advanced Optical Materials 10, 11(2022)
Gagrani N, Vora K, Fu L, Jagadish C, Tan H
Flexible InP-ZnO nanowire heterojunction light emitting diodes
Nanoscale Horizons 7, 4(2022)
Flexible InP-ZnO nanowire heterojunction light emitting diodes
Nanoscale Horizons 7, 4(2022)
Gagrani N, Vora K, Jagadish C, Tan H
Thin SnxNiyOz Films as p-Type Transparent Conducting Oxide and Their Application in Light-Emitting Diodes
ACS Applied Materials and Interfaces 14, 32(2022) 37101-37109
Thin SnxNiyOz Films as p-Type Transparent Conducting Oxide and Their Application in Light-Emitting Diodes
ACS Applied Materials and Interfaces 14, 32(2022) 37101-37109
Gopakumar Saraswathyvilasam A, Prasanna P, Yuan X, Azimi Z, Kremer F, Jagadish C, Chakraborty S, Tan H
Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal-Organic Chemical Vapor Deposition
ACS Applied Materials & Interfaces 14, 2(2022) 3395�¢â?¬â??3403
Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal-Organic Chemical Vapor Deposition
ACS Applied Materials & Interfaces 14, 2(2022) 3395�¢â?¬â??3403
Gupta B, Hossain M, Riaz A, Sharma A, Zhang D, Tan H, Jagadish C, Catchpole K, Hoex B, Karuturi S
Recent Advances in Materials Design Using Atomic Layer Deposition for Energy Applications
Advanced Functional Materials 32, 3(2022) 1-39
Recent Advances in Materials Design Using Atomic Layer Deposition for Energy Applications
Advanced Functional Materials 32, 3(2022) 1-39
Haggren T, Raj V, Haggren A, Gagrani N, Jagadish C, Tan H
CuI as a Hole-Selective Contact for GaAs Solar Cells
ACS Applied Materials and Interfaces 14, 47(2022) 52918 - 52926
CuI as a Hole-Selective Contact for GaAs Solar Cells
ACS Applied Materials and Interfaces 14, 47(2022) 52918 - 52926
Jiang Y, Shen R, Li T, Tian J, Li S, Tan H, Jagadish C, Qing C
Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y2O3
Nanoscale 14, 35(2022) 12830-12840
Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y2O3
Nanoscale 14, 35(2022) 12830-12840
Wan Ahmad Kamil W, Tan H, Jagadish C, Dawes J, Zhao B, Ismail W
A hybrid random laser using dye with self-organized GaN nanorods
Semiconductor Science and Technology 37, 2(2022) 8
A hybrid random laser using dye with self-organized GaN nanorods
Semiconductor Science and Technology 37, 2(2022) 8
Kaushik S, Karmakar S, Varshney R, Sheoran H, Chugh D, Jagadish C, Tan H, Singh R
Deep-Ultraviolet Photodetectors Based on Hexagonal Boron Nitride Nanosheets Enhanced by Localized Surface Plasmon Resonance in Al Nanoparticles
ACS Applied Nano Materials 5, 5(2022) 7481-7491
Deep-Ultraviolet Photodetectors Based on Hexagonal Boron Nitride Nanosheets Enhanced by Localized Surface Plasmon Resonance in Al Nanoparticles
ACS Applied Nano Materials 5, 5(2022) 7481-7491
Lee Y, Gupta B, Tan H, Jagadish C, Oh J, Karuturi S
Ultrathin transparent metal capping layer on metal oxide carrier-selective contacts for Si solar cells
European Physical Journal - Special Topics 231(2022)
Ultrathin transparent metal capping layer on metal oxide carrier-selective contacts for Si solar cells
European Physical Journal - Special Topics 231(2022)
Li Z, Li L, Wang F, Xu L, Gao Q, Alabadla A, Peng K, Vora K, Hattori H, Tan H, Jagadish C, Fu L
Investigation of light-matter interaction in single vertical nanowires in ordered nanowire arrays
Nanoscale 14, 9(2022) 3527-3536
Investigation of light-matter interaction in single vertical nanowires in ordered nanowire arrays
Nanoscale 14, 9(2022) 3527-3536
Potočnik T, Christopher P, Mouthaan R, Albrow-Owen T, Burton O, Jagadish C, Tan H, Wilkinson T, Hofmann S, Joyce H, Alexander-Webber J
Automated Computer Vision-Enabled Manufacturing of Nanowire Devices
ACS Nano 16, 11(2022) 18009 - 18017
Automated Computer Vision-Enabled Manufacturing of Nanowire Devices
ACS Nano 16, 11(2022) 18009 - 18017
Rashidi Shahgoli M, Haggren T, Jagadish C, Tan H
Characteristics and Thermal Control of Random and Fabry?P?rot Lasing in Nanowire Arrays
ACS Photonics 9, 11(2022) 3573â??3583
Characteristics and Thermal Control of Random and Fabry?P?rot Lasing in Nanowire Arrays
ACS Photonics 9, 11(2022) 3573â??3583
Rocco D, Camacho-Morales M, Xu L, Zilli A, Vinel V, Finazzi M, Celebrano M, Leo G, Rahmani M, Jagadish C, Tan H, Neshev D, De Angelis C
Second order nonlinear frequency generation at the nanoscale in dielectric platforms
Advances in Physics: X 7, 1(2022)
Second order nonlinear frequency generation at the nanoscale in dielectric platforms
Advances in Physics: X 7, 1(2022)
Soo J, Gupta B, Riaz A, Jagadish C, Tan H, Karuturi S
Facile Substrate-Agnostic Preparation of High-Performance Regenerative Water Splitting (Photo)electrodes
Chemistry of Materials 34, 15(2022) 6792-6801
Facile Substrate-Agnostic Preparation of High-Performance Regenerative Water Splitting (Photo)electrodes
Chemistry of Materials 34, 15(2022) 6792-6801
Tu C, Kaveh M, Fränzl M, Gao Q, Tan H, Jagadish C, Schmitzer H, Wagner H
Unique reflection from birefringent uncoated and gold-coated InP nanowire crystal arrays
Optics Express 30, 3(2022) 3172-3182
Unique reflection from birefringent uncoated and gold-coated InP nanowire crystal arrays
Optics Express 30, 3(2022) 3172-3182
Wei S, Li Z, Murugappan K, Li Z, Zhang F, Gopakumar Saraswathyvilasam A, Lysevych M, Tan H, Jagadish C, Tricoli A, Fu L
A Self-Powered Portable Nanowire Array Gas Sensor for Dynamic NO2 Monitoring at Room Temperature
Advanced Materials 35, 12(2022) 2207199
A Self-Powered Portable Nanowire Array Gas Sensor for Dynamic NO2 Monitoring at Room Temperature
Advanced Materials 35, 12(2022) 2207199
Weissflog M, Cai M, Parry M, Rahmani M, Xu L, Arslan D, Fedotova A, Marino G, Lysevych M, Tan H, Jagadish C, Miroshnichenko A, Leo G, Sukhorukov A, Setzpfandt F, Pertsch T, Staude I, Neshev D
Far-Field Polarization Engineering from Nonlinear Nanoresonators
Laser and Photonics Reviews 16, 12(2022)
Far-Field Polarization Engineering from Nonlinear Nanoresonators
Laser and Photonics Reviews 16, 12(2022)
Wong W, Jagadish C, Tan H
III-V Semiconductor Whispering-Gallery Mode Micro-Cavity Lasers: Advances and Prospects
IEEE Journal of Quantum Electronics 58, 4(2022) 18
III-V Semiconductor Whispering-Gallery Mode Micro-Cavity Lasers: Advances and Prospects
IEEE Journal of Quantum Electronics 58, 4(2022) 18
Wong W, Wang N, Jagadish C, Tan H
Directional Lasing in Coupled InP Microring/Nanowire Systems
Laser and Photonics Reviews 17, 3(2022)
Directional Lasing in Coupled InP Microring/Nanowire Systems
Laser and Photonics Reviews 17, 3(2022)
Yi R, Zhang X, Li C, Zhao B, Wang J, Li Z, Gan X, Li L, Li Z, Zhang F, Fang L, Wang N, Chen P, Lu W, Fu L, Zhao J, Tan H, Jagadish C
Self-frequency-conversion nanowire lasers
Light: Science & Applications 11, 1(2022) 1-9
Self-frequency-conversion nanowire lasers
Light: Science & Applications 11, 1(2022) 1-9
Yi R, Zhang X, Zhang F, Gu L, Zhang Q, Fang L, Zhao J, Fu L, Tan H, Jagadish C, Gan X
Integrating a Nanowire Laser in an on-Chip Photonic Waveguide
Nano Letters 22, 24(2022) 9920-9927
Integrating a Nanowire Laser in an on-Chip Photonic Waveguide
Nano Letters 22, 24(2022) 9920-9927
Zuo X, Li Z, Wong W, Yu Y, Li X, He J, Fu L, Tan H, Jagadish C, Yuan X
Design of InAs nanosheet arrays with ultrawide polarization-independent high absorption for infrared photodetection
Applied Physics Letters 120, 7(2022)
Design of InAs nanosheet arrays with ultrawide polarization-independent high absorption for infrared photodetection
Applied Physics Letters 120, 7(2022)
Aman G, Mohammadi F, Fraenzl M, Lysevych M, Tan H, Jagadish C, Schmitzer H, Cahay M, Wagner H
Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires
Scientific Reports 11, 1(2021)
Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires
Scientific Reports 11, 1(2021)
Azimi Z, Gagrani N, Qu J, Lee Cheong Lem O, Mokkapati S, Cairney J, Zheng R, Tan H, Jagadish C, Wong-Leung J
Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications
Nanoscale Horizons 6, 7(2021) 559-567
Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications
Nanoscale Horizons 6, 7(2021) 559-567
Azimi Z, Gopakumar Saraswathyvilasam A, Ameruddin A, Li L, Truong T, Nguyen H, Tan H, Jagadish C, Wong-Leung J
Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires
Nano Research 15(2021) 3695-3703
Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires
Nano Research 15(2021) 3695-3703
Bera K, Roy A, Chugh D, Wong-Leung J, Tan H, Jagadish C
Role of defects and grain boundaries in the thermal response of wafer-scale hBN films
Nanotechnology 32, 7(2021)
Role of defects and grain boundaries in the thermal response of wafer-scale hBN films
Nanotechnology 32, 7(2021)
Butson J, Sharma A, Chen H, Wang Y, Lee Y, Varadhan P, Tsampas M, Zhao C, Tricoli A, Tan H, Jagadish C, Karuturi S
Surface-Structured Cocatalyst Foils Unraveling a Pathway to High-Performance Solar Water Splitting
Advanced Energy Materials 12, 1(2021) 1-11
Surface-Structured Cocatalyst Foils Unraveling a Pathway to High-Performance Solar Water Splitting
Advanced Energy Materials 12, 1(2021) 1-11
Camacho-Morales M, Rocco D, Xu L, Gili V, Dimitrov N, Stoyanov L, Ma Z, Komar A, Lysevych M, Karouta F, Dreischuh A, Tan H, Leo G, De Angelis C, Jagadish C, Miroshnichenko A, Rahmani M, Neshev D
Infrared upconversion imaging in nonlinear metasurfaces
Advanced Photonics 3, 3(2021)
Infrared upconversion imaging in nonlinear metasurfaces
Advanced Photonics 3, 3(2021)
Jevtics D, Smith J, McPhillimy J, Guilhabert B, Hill P, Klitis C, Hurtado A, Sorel M, Tan H, Jagadish C, Dawson M, Strain M
Spatially dense integration of micron-scale devices from multiple materials on a single chip via transfer-printing
Optical Materials Express 11, 10(2021) 3567-3576
Spatially dense integration of micron-scale devices from multiple materials on a single chip via transfer-printing
Optical Materials Express 11, 10(2021) 3567-3576
Lee Y, Gupta B, Tan H, Jagadish C, Oh J, Karuturi S
Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting
iScience 24, 8(2021)
Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting
iScience 24, 8(2021)
Lee Y, Tan H, Jagadish C, Karuturi S
Controlled Cracking for Large-Area Thin Film Exfoliation: Working Principles, Status, and Prospects
ACS Applied Electronic Materials 3, 1(2021) 145-162
Controlled Cracking for Large-Area Thin Film Exfoliation: Working Principles, Status, and Prospects
ACS Applied Electronic Materials 3, 1(2021) 145-162
Li Y, Wang Y, Cai R, Yu C, Zhang J, Wu J, Zhang Y, Tan H, Jagadish C, Wu Y
Tunable Synthesis of 3D Niobium Oxynitride Nanosheets for Lithium-Ion Hybrid Capacitors with High Energy/Power Density
ACS Sustainable Chemistry & Engineering 9, 43(2021) 14569-14578
Tunable Synthesis of 3D Niobium Oxynitride Nanosheets for Lithium-Ion Hybrid Capacitors with High Energy/Power Density
ACS Sustainable Chemistry & Engineering 9, 43(2021) 14569-14578
Li Z, Trendafilov S, Zhang F, Allen M, Allen J, Dev S, Pan W, Yu Y, Gao Q, Yuan X, Yang I, Zhu Y, Peng S, Bhat A, Lei W, Tan H, Jagadish C, Fu L
Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging
Nano Letters 21(2021) 7388-7395
Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging
Nano Letters 21(2021) 7388-7395
Liu G, Narangari P, Trinh Q, Tu W, Kraft M, Tan H, Jagadish C, Choksi T, Ager J, Karuturi S, Xu R
Manipulating Intermediates at the Au-TiO2 Interface over InP Nanopillar Array for Photoelectrochemical CO2 Reduction
ACS Catalysis 11, 18(2021) 11416-11428
Manipulating Intermediates at the Au-TiO2 Interface over InP Nanopillar Array for Photoelectrochemical CO2 Reduction
ACS Catalysis 11, 18(2021) 11416-11428
Liu Z, Yuan X, Wang S, Liu S, Tan H, Jagadish C
Nanomechanical behavior of single taper-free GaAs nanowires unravelled by in-situ TEM mechanical testing and molecular dynamics simulation
Materials Science and Engineering A 806(2021)
Nanomechanical behavior of single taper-free GaAs nanowires unravelled by in-situ TEM mechanical testing and molecular dynamics simulation
Materials Science and Engineering A 806(2021)
Mendelson N, Chugh D, Reimers J, Cheng T, Gottscholl A, Long H, Mellor C, Zettl A, Dyakonov V, Beton P, Novikov S, Jagadish C, Tan H
Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride
Nature Materials 20(2021) 321-328
Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride
Nature Materials 20(2021) 321-328
Narangari P, Butson J, Tan H, Jagadish C, Karuturi S
Surface-Tailored InP Nanowires via Self-Assembled Au Nanodots for Efficient and Stable Photoelectrochemical Hydrogen Evolution
Nano Letters 21, 16(2021) 6967-6974
Surface-Tailored InP Nanowires via Self-Assembled Au Nanodots for Efficient and Stable Photoelectrochemical Hydrogen Evolution
Nano Letters 21, 16(2021) 6967-6974
Raj V, Chugh D, Black L, Ismael M, Li L, Kremer F, MacDonald D, Tan H, Jagadish C
Passivation of InP solar cells using large area hexagonal-BN layers
npj 2D Materials and Applications 5(2021) 1-8
Passivation of InP solar cells using large area hexagonal-BN layers
npj 2D Materials and Applications 5(2021) 1-8
Raj V, Haggren T, Tournet J, Tan H, Jagadish C
Electron-Selective Contact for GaAs Solar Cells
ACS Applied Energy Materials 4(2021) 1356-1364
Electron-Selective Contact for GaAs Solar Cells
ACS Applied Energy Materials 4(2021) 1356-1364
Raj V, Haggren T, Wong W, Tan H, Jagadish C
Topical review: pathways toward cost-effective single-junction III–V solar cells
Journal of Physics D: Applied Physics 55, 14(2021) 35
Topical review: pathways toward cost-effective single-junction III–V solar cells
Journal of Physics D: Applied Physics 55, 14(2021) 35
Raj V, Jagadish C, Gautam V
"Understanding, engineering, and modulatingthe growth of neural networks: Aninterdisciplinary approach"
Biophysics Reviews 2, 2(2021)
"Understanding, engineering, and modulatingthe growth of neural networks: Aninterdisciplinary approach"
Biophysics Reviews 2, 2(2021)
Rashidi Shahgoli M, Haggren T, Su Z, Jagadish C, Mokkapati S, Tan H
Managing Resonant and Nonresonant Lasing Modes in GaAs Nanowire Random Lasers
Nano Letters 21, 9(2021) 3901-3907
Managing Resonant and Nonresonant Lasing Modes in GaAs Nanowire Random Lasers
Nano Letters 21, 9(2021) 3901-3907
Rashidi Shahgoli M, Li Z, Jagadish C, Mokkapati S, Tan H
Controlling the lasing modes in random lasers operating in the Anderson localization regime
Optics Express 29, 21(2021) 33548-33557
Controlling the lasing modes in random lasers operating in the Anderson localization regime
Optics Express 29, 21(2021) 33548-33557
Seidl J, Gluschke J, Yuan X, Tan H, Jagadish C, Caroff-Gaonac'h P, Micolich A
Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins
ACS Nano 15, 4(2021) 7226�¢â?¬â??7236
Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins
ACS Nano 15, 4(2021) 7226�¢â?¬â??7236
Su Z, Wang N, Tan H, Jagadish C
2D Carrier Localization at the Wurtzite-Zincblende Interface in Novel Layered InP Nanomembranes
ACS Photonics 8, 6(2021) 1735-1745
2D Carrier Localization at the Wurtzite-Zincblende Interface in Novel Layered InP Nanomembranes
ACS Photonics 8, 6(2021) 1735-1745
Tournet J, Butson J, Narangari P, Dontu S, Gupta B, Lysevych M, Karuturi S, Tan H, Jagadish C
Narrow-Bandgap InGaAsP Solar Cell with TiO2 Carrier-Selective Contact
Physica Status Solidi: Rapid Research Letters 15, 11(2021)
Narrow-Bandgap InGaAsP Solar Cell with TiO2 Carrier-Selective Contact
Physica Status Solidi: Rapid Research Letters 15, 11(2021)
Trendafilov S, Allen J, Allen M, Dev S, Li Z, Fu L, Jagadish C
Light Absorption in Nanowire Photonic Crystal Slabs and the Physics of Exceptional Points: The Shape Shifter Modes
Sensors 21, 16(2021) 1-10
Light Absorption in Nanowire Photonic Crystal Slabs and the Physics of Exceptional Points: The Shape Shifter Modes
Sensors 21, 16(2021) 1-10
Tu C, Fränzl M, Gao Q, Tan H, Jagadish C, Schmitzer H, Wagner H
Lasing from InP Nanowire Photonic Crystals on InP Substrate
Advanced Optical Materials 9, 2001745(2021)
Lasing from InP Nanowire Photonic Crystals on InP Substrate
Advanced Optical Materials 9, 2001745(2021)
Wang N, Wong W, Yuan X, Li L, Jagadish C, Tan H
Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy
Small 17, 21(2021)
Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy
Small 17, 21(2021)
Wei S, Li Z, John A, Karawdeniya B, Li Z, Zhang F, Vora K, Tan H, Jagadish C, Murugappan K, Tricoli A, Fu L
Semiconductor Nanowire Arrays for High-Performance Miniaturized Chemical Sensing
Advanced Functional Materials 32, 5(2021)
Semiconductor Nanowire Arrays for High-Performance Miniaturized Chemical Sensing
Advanced Functional Materials 32, 5(2021)
Wong W, Su Z, Wang N, Jagadish C, Tan H
Epitaxially Grown InP Micro-Ring Lasers
Nano Letters 21, 13(2021) 5681-5688
Epitaxially Grown InP Micro-Ring Lasers
Nano Letters 21, 13(2021) 5681-5688
Yuan X, Liu H, Liu S, Zhang R, Wang Y, He J, Tan H, Jagadish C
Thermodynamic properties of metastable wurtzite InP nanosheets
Journal of Physics D: Applied Physics 54, 50(2021) 1-9
Thermodynamic properties of metastable wurtzite InP nanosheets
Journal of Physics D: Applied Physics 54, 50(2021) 1-9
Yuan X, Pan D, Zhou Y, Zhang X, Peng K, Zhao B, Deng M, He J, Tan H, Jagadish C
Selective area epitaxy of III-V nanostructure arrays and networks: Growth, applications, and future directions
Applied Physics Reviews 8, 2(2021) 1-25
Selective area epitaxy of III-V nanostructure arrays and networks: Growth, applications, and future directions
Applied Physics Reviews 8, 2(2021) 1-25
Zhang F, Zhang X, Li Z, Yi R, Li Z, Wang N, Xu X, Azimi Z, Li L, Lysevych M, Gan X, Lu Y, Tan H, Jagadish C, Fu L
A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications
Advanced Functional Materials 32, 3(2021)
A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications
Advanced Functional Materials 32, 3(2021)
Zhang X, Yi R, Gagrani N, Li Z, Zhang F, Gan X, Yao X, Yuan X, Wang N, Zhao J, Chen P, Lu W, Fu L, Tan H, Jagadish C
Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers
ACS Nano 15, 5(2021) 9126-9133
Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers
ACS Nano 15, 5(2021) 9126-9133
Zhu Y, Raj V, Li Z, Tan H, Jagadish C, Fu L
Self-Powered InP Nanowire Photodetector for Single-Photon Level Detection at Room Temperature
Advanced Materials 33, 49(2021) 1-9
Self-Powered InP Nanowire Photodetector for Single-Photon Level Detection at Room Temperature
Advanced Materials 33, 49(2021) 1-9
Bera J, Chugh D, Patra A, Tan H, Jagadish C, Roy A
Strain distribution in wrinkled hBN films
Solid State Communications 310(2020)
Strain distribution in wrinkled hBN films
Solid State Communications 310(2020)
Chugh D, Adhikari S, Wong-Leung J, Lysevych M, Jagadish C, Tan H
Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN
Crystal Growth & Design 20, 3(2020) 1811-1819
Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN
Crystal Growth & Design 20, 3(2020) 1811-1819
Ghediya P, Chaudhuri T, Raj V, Vankhade D, Tan H, Jagadish C
Electrical Properties of Compact Drop-Casted Cu2SnS3 Films
Journal of Electronic Materials 49, 11(2020) 6403-6409
Electrical Properties of Compact Drop-Casted Cu2SnS3 Films
Journal of Electronic Materials 49, 11(2020) 6403-6409
Gluschke J, Seidl J, Tan H, Jagadish C, Caroff-Gaonac'h P, Micolich A
Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
Nanoscale 12, 39(2020) 20317-20325
Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
Nanoscale 12, 39(2020) 20317-20325
Gustafsson A, Jiang N, Zheng C, Etheridge J, Gao Q, Tan H, Jagadish C, Wong-Leung J
Cathodoluminescence visualisation of local thickness variations of GaAs/AlGaAs quantum-well tubes on nanowires
Nanotechnology 31, 42(2020) 1-10
Cathodoluminescence visualisation of local thickness variations of GaAs/AlGaAs quantum-well tubes on nanowires
Nanotechnology 31, 42(2020) 1-10
Hao J, Ma T, Chen X, Kuang Y, Li L, Li J, Ren F, Gu S, Tan H, Jagadish C, Ye J
Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum ?-Ga2 O3 on sapphire
Applied Surface Science 513(2020)
Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum ?-Ga
Applied Surface Science 513(2020)
Jevtics D, McPhillimy J, Guilhabert B, Alanis J, Tan H, Jagadish C, Dawson M, Hurtado A, Parkinson P, Strain M
Characterization, Selection, and Microassembly of Nanowire Laser Systems
Nano Letters 20, 3(2020) 1862-1868
Characterization, Selection, and Microassembly of Nanowire Laser Systems
Nano Letters 20, 3(2020) 1862-1868
Jiang N, Joyce H, Parkinson P, Wong-Leung J, Tan H, Jagadish C
Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires
Frontiers in Chemistry 8(2020)
Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires
Frontiers in Chemistry 8(2020)
Karuturi S, Shen H, Sharma A, Beck F, Varadhan P, Duong T, Narangari P, Zhang D, Wan Y, He J, Tan H, Jagadish C, Catchpole K
Over 17% Efficiency Stand-Alone Solar Water Splitting Enabled by Perovskite-Silicon Tandem Absorbers
Advanced Energy Materials 10, 28(2020) 1-9
Over 17% Efficiency Stand-Alone Solar Water Splitting Enabled by Perovskite-Silicon Tandem Absorbers
Advanced Energy Materials 10, 28(2020) 1-9
Lee Y, Yang I, Tan H, Jagadish C, Karuturi S
Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap
ACS Applied Materials and Interfaces 12, 32(2020) 36380-36388
Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap
ACS Applied Materials and Interfaces 12, 32(2020) 36380-36388
Li Z, Allen J, Allen M, Tan H, Jagadish C, Fu L
Review on III-V semiconductor single nanowire-based room temperature infrared photodetectors
Materials 13, 6(2020)
Review on III-V semiconductor single nanowire-based room temperature infrared photodetectors
Materials 13, 6(2020)
Li Z, Yuan X, Gao Q, Yang I, Li L, Caroff-Gaonac'h P, Allen M, Allen J, Tan H, Jagadish C, Fu L
In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse
Nanotechnology 31, 24(2020)
In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse
Nanotechnology 31, 24(2020)
Luo M, Ren F, Gagrani N, Qiu K, Wang Q, Yu L, Ye J, Yan F, Zhang R, Tan H, Jagadish C, Ji X
Polarization-Independent Indium Phosphide Nanowire Photodetectors
Advanced Optical Materials 8, 17(2020) 8
Polarization-Independent Indium Phosphide Nanowire Photodetectors
Advanced Optical Materials 8, 17(2020) 8
Peng K, Jevtics D, Zhang F, Sterzl S, Damry D, Rothmann M, Guilhabert B, Strain M, Tan H, Herz L, Fu L, Dawson M, Hurtado A, Jagadish C, Johnston M
Three-dimensional cross-nanowire networks recover full terahertz state
Science 368, 6490(2020) 510-513
Three-dimensional cross-nanowire networks recover full terahertz state
Science 368, 6490(2020) 510-513
Pournia S, Linser S, Jnawali G, Jackson H, Smith L, Ameruddin A, Caroff-Gaonac'h P, Wong-Leung J, Tan H, Jagadish C, Joyce H
Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy
Nano Research 13, 6(2020) 1586-1591
Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy
Nano Research 13, 6(2020) 1586-1591
Raj V, Rougieux F, Fu L, Tan H, Jagadish C
Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts
IEEE Journal of Photovoltaics 10, 6(2020) 1657-1666
Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts
IEEE Journal of Photovoltaics 10, 6(2020) 1657-1666
Raj V, Tan H, Jagadish C
Non-epitaxial carrier selective contacts for III-V solar cells: A review
Applied Materials Today 18(2020)
Non-epitaxial carrier selective contacts for III-V solar cells: A review
Applied Materials Today 18(2020)
Smith L, Batey J, Alexander-Webber J, Fan Y, Hsieh Y, Fung S, Jevtics D, Robertson J, Guilhabert B, Strain M, Dawson M, Hurtado A, Griffiths J, Jagadish C, Beere H, Burton O, Hofmann S, Chen T, Ritchie D, Kelly M, Joyce H, Smith C
High-throughput electrical characterization of nanomaterials from room to cryogenic temperatures
ACS Nano 14, 11(2020) 15293-15305
High-throughput electrical characterization of nanomaterials from room to cryogenic temperatures
ACS Nano 14, 11(2020) 15293-15305
Tedeschi D, Fonseka H, Blundo E, del Aguila A, Guo Y, Tan H, Christianen P, Jagadish C, Polimeni A, De Luca M
Hole and Electron Effective Masses in Single InP Nanowires with a Wurtzite-Zincblende Homojunction
ACS Nano 14, 9(2020) 11613-11622
Hole and Electron Effective Masses in Single InP Nanowires with a Wurtzite-Zincblende Homojunction
ACS Nano 14, 9(2020) 11613-11622
Tournet J, Lee Y, Karuturi S, Tan H, Jagadish C
III-V Semiconductor Materials for Solar Hydrogen Production: Status and Prospects
ACS Energy Letters 5, 2(2020) 611-622
III-V Semiconductor Materials for Solar Hydrogen Production: Status and Prospects
ACS Energy Letters 5, 2(2020) 611-622
Xu L, Saerens G, Timofeeva M, Smirnova D, Volkovskaya I, Lysevych M, Camacho-Morales M, Cai M, Zangeneh Kamali K, Huang L, Karouta F, Tan H, Jagadish C, Miroshnichenko A, Grange R, Neshev D, Rahmani M
Forward and Backward Switching of Nonlinear Unidirectional Emission from GaAs Nanoantennas
ACS Nano 14(2020) 1379-1389
Forward and Backward Switching of Nonlinear Unidirectional Emission from GaAs Nanoantennas
ACS Nano 14(2020) 1379-1389
Yang I, Kim S, Niihori M, Alabadla A, Li Z, Li L, Lockrey M, Choi D, Aharonovich I, Wong-Leung J, Tan H, Jagadish C, Fu L
Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes
Nano Energy 71(2020)
Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes
Nano Energy 71(2020)
Yew R, Tan H, Jagadish C, Karuturi S
Three-dimensional ordered macroporous TiO2-TaOxNy heterostructure for photoelectrochemical water splitting
Journal of Physical Chemistry C 124, 44(2020) 24135-24144
Three-dimensional ordered macroporous TiO2-TaOxNy heterostructure for photoelectrochemical water splitting
Journal of Physical Chemistry C 124, 44(2020) 24135-24144
Yuan X, Liu K, Skalsky S, Parkinson P, Fang L, He J, Tan H, Jagadish C
Carrier dynamics and recombination mechanisms in InP twinning superlattice nanowires
Optics Express 28, 11(2020) 16795-16804
Carrier dynamics and recombination mechanisms in InP twinning superlattice nanowires
Optics Express 28, 11(2020) 16795-16804
Yuan X, Wang N, Tian Z, Zhang F, Li L, Lockrey M, He J, Jagadish C, Tan H
Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays
Nanoscale Horizons 5, 11(2020) 1530-1537
Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays
Nanoscale Horizons 5, 11(2020) 1530-1537
Zhang D, Soo J, Tan H, Jagadish C, Catchpole K, Karuturi S
Earth-Abundant Amorphous Electrocatalysts for Electrochemical Hydrogen Production: A Review
Advanced Energy & Sustainability Research 2, 3(2020) 1-27
Earth-Abundant Amorphous Electrocatalysts for Electrochemical Hydrogen Production: A Review
Advanced Energy & Sustainability Research 2, 3(2020) 1-27
Zhao B, Lockrey M, Wang N, Caroff-Gaonac'h P, Yuan X, Li L, Wong-Leung J, Tan H, Jagadish C
Highly regular rosette-shaped cathodoluminescence in GaN self-assembled nanodisks and nanorods
Nano Research 13, 9(2020) 2500-2505
Highly regular rosette-shaped cathodoluminescence in GaN self-assembled nanodisks and nanorods
Nano Research 13, 9(2020) 2500-2505
Abbasian Shojaei I, Linser S, Jnawali G, Wickramasuriya N, Jackson H, Smith L, Kargar F, Balandin A, Yuan X, Caroff-Gaonac'h P, Tan H, Jagadish C
Strong Hot Carrier Effects in Single Nanowire Heterostructures
Nano Letters 19, 8(2019) 5062-5069
Strong Hot Carrier Effects in Single Nanowire Heterostructures
Nano Letters 19, 8(2019) 5062-5069
Alanis J, Chen Q, Lysevych M, Burgess T, Li L, Liu Z, Tan H, Jagadish C, Parkinson P
Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization
Nanoscale Advances 1, 11(2019) 4393-4397
Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization
Nanoscale Advances 1, 11(2019) 4393-4397
Alanis J, Lysevych M, Burgess T, Saxena D, Mokkapati S, Skalsky S, Tang X, Mitchell P, Walton A, Tan H, Jagadish C, Parkinson P
Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing
Nano Letters 19, 1(2019) 362-368
Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing
Nano Letters 19, 1(2019) 362-368
Butson J, Narangari P, Lysevych M, Wong-Leung J, Wan Y, Karuturi S, Tan H, Jagadish C
InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting
ACS Applied Materials and Interfaces 11, 28(2019) 25236-25242
InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting
ACS Applied Materials and Interfaces 11, 28(2019) 25236-25242
Camacho-Morales M, Bautista G, Zang X, Xu L, Turquet L, Miroshnichenko A, Tan H, Lamprianidis A, Rahmani M, Jagadish C, Neshev D, Kauranen M
Resonant harmonic generation in AlGaAs nanoantennas probed by cylindrical vector beams
Nanoscale 11, 4(2019) 1745-1753
Resonant harmonic generation in AlGaAs nanoantennas probed by cylindrical vector beams
Nanoscale 11, 4(2019) 1745-1753
Chen B, Fu X, Lysevych M, Tan H, Jagadish C
Four-Dimensional Probing of Phase-Reaction Dynamics in Au/GaAs Nanowires
Nano Letters 19, 2(2019) 781-786
Four-Dimensional Probing of Phase-Reaction Dynamics in Au/GaAs Nanowires
Nano Letters 19, 2(2019) 781-786
Chen X, Chen Y, Ren F, Gu S, Tan H, Jagadish C, Ye J
Band alignment and band bending at a-Ga2O3/ZnO n-n isotype hetero-interface
Applied Physics Letters 115, 20(2019) 1-5
Band alignment and band bending at a-Ga2O3/ZnO n-n isotype hetero-interface
Applied Physics Letters 115, 20(2019) 1-5
Chugh D, Jagadish C, Tan H
Large-Area Hexagonal Boron Nitride for Surface Enhanced Raman Spectroscopy
Advanced Materials Technologies 4, 8(2019) 1-7
Large-Area Hexagonal Boron Nitride for Surface Enhanced Raman Spectroscopy
Advanced Materials Technologies 4, 8(2019) 1-7
Fonseka H, Caroff-Gaonac'h P, Guo Y, Sanchez A, Tan H, Jagadish C
Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures
Nanoscale Research Letters 14(2019) 1-10
Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures
Nanoscale Research Letters 14(2019) 1-10
Gao H, Sun Q, Lysevych M, Tan H, Jagadish C, Zou J
Effect of Sn Addition on Epitaxial GaAs Nanowire Grown at Different Temperatures in Metal-Organic Chemical Vapor Deposition
Crystal Growth & Design 19, 9(2019) 5314-5319
Effect of Sn Addition on Epitaxial GaAs Nanowire Grown at Different Temperatures in Metal-Organic Chemical Vapor Deposition
Crystal Growth & Design 19, 9(2019) 5314-5319
Gao H, Sun Q, Sun W, Tan H, Jagadish C, Zou J
Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires
Nano Letters 19, 11(2019) 8262-8269
Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires
Nano Letters 19, 11(2019) 8262-8269
Gao H, Sun W, Sun Q, Tan H, Jagadish C, Zou J
Compositional Varied Core-Shell InGaP Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Nano Letters 19, 6(2019) 3782-3788
Compositional Varied Core-Shell InGaP Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Nano Letters 19, 6(2019) 3782-3788
Gao Q, Li Z, Li L, Vora K, Li Z, Alabadla A, Wang F, Guo Y, Peng K, Wenas Y, Mokkapati S, Karouta F, Tan H, Jagadish C, Fu L
Axial p-n junction design and characterization for InP nanowire array solar cells
Progress in Photovoltaics: Research and Applications 27, 3(2019) 237-244
Axial p-n junction design and characterization for InP nanowire array solar cells
Progress in Photovoltaics: Research and Applications 27, 3(2019) 237-244
Ma T, Chen X, Kuang Y, Li L, Kremer F, Tan H, Jagadish C
On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire
Applied Physics Letters 115, 18(2019) 1-5
On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire
Applied Physics Letters 115, 18(2019) 1-5
Mirkhaydarov B, Votsi H, Sahu A, Caroff-Gaonac'h P, Young P, Stolojan V, King S, Ng C, Devabhaktuni V, Tan H, Jagadish C, Aaen P, Shkunov M
Solution-Processed InAs Nanowire Transistors as Microwave Switches
Advanced Electronic Materials 5, 1(2019) 1-8
Solution-Processed InAs Nanowire Transistors as Microwave Switches
Advanced Electronic Materials 5, 1(2019) 1-8
Narangari P, Karuturi S, Wu Y, Wong-Leung J, Vora K, Lysevych M, Wan Y, Tan H, Jagadish C, Mokkapati S
Ultrathin Ta 2 O 5 electron-selective contacts for high efficiency InP solar cells
Nanoscale 11, 15(2019) 7497-7505
Ultrathin Ta 2 O 5 electron-selective contacts for high efficiency InP solar cells
Nanoscale 11, 15(2019) 7497-7505
Raj V, Fu L, Tan H, Jagadish C
Design Principles for Fabrication of InP-Based Radial Junction Nanowire Solar Cells Using an Electron Selective Contact
IEEE Journal of Photovoltaics 9, 4(2019) 980-991
Design Principles for Fabrication of InP-Based Radial Junction Nanowire Solar Cells Using an Electron Selective Contact
IEEE Journal of Photovoltaics 9, 4(2019) 980-991
Raj V, Lu T, Lockrey M, Liu R, Kremer F, Li L, Liu Y, Tan H, Jagadish C
Introduction of TiO2 in CuI for Its Improved Performance as a p-Type Transparent Conductor
ACS Applied Materials and Interfaces 11, 27(2019) 24254-24263
Introduction of TiO2 in CuI for Its Improved Performance as a p-Type Transparent Conductor
ACS Applied Materials and Interfaces 11, 27(2019) 24254-24263
Raj V, Tan H, Jagadish C
Axial vs. Radial Junction Nanowire Solar Cells
Asian Journal of Physics 28, 7-9(2019) 719-746
Axial vs. Radial Junction Nanowire Solar Cells
Asian Journal of Physics 28, 7-9(2019) 719-746
Raj V, Tan H, Jagadish C
Axial vs radial junction nanowire solar cell
Asian Journal of Physics 28(2019) 719-746
Axial vs radial junction nanowire solar cell
Asian Journal of Physics 28(2019) 719-746
Raj V, Vora K, Fu L, Tan H, Jagadish C
High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture
ACS Nano 13, 10(2019) 12015-12023
High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture
ACS Nano 13, 10(2019) 12015-12023
Sautter J, Xu L, Miroshnichenko A, Lysevych M, Volkovskaya I, Smirnova D, Camacho-Morales M, Zangeneh Kamali K, Karouta F, Vora K, Tan H, Kauranen M, Staude I, Jagadish C, Neshev D, Rahmani M
Tailoring Second-Harmonic Emission from (111)-GaAs Nanoantennas
Nano Letters 19, 6(2019) 3905-3911
Tailoring Second-Harmonic Emission from (111)-GaAs Nanoantennas
Nano Letters 19, 6(2019) 3905-3911
Seidl J, Gluschke J, Yuan X, Naureen S, Shahid N, Tan H, Jagadish C, Micolich A, Caroff-Gaonac'h P
Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy
Nano Letters 19, 7(2019) 4666-4677
Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy
Nano Letters 19, 7(2019) 4666-4677
Shi Y, Ren F, Xu W, Chen X, Ye J, Li L, Zhou D, Zhang R, Zheng Y, Tan H, Jagadish C, Lu H
Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices
Scientific Reports 9, 0(2019)
Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices
Scientific Reports 9, 0(2019)
Stutz E, Friedl M, Burgess T, Tan H, Caroff-Gaonac'h P, Jagadish C, Fontcuberta i Morral A
Nanosails Showcasing Zn3As2 as an Optoelectronic-Grade Earth Abundant Semiconductor
Physica Status Solidi: Rapid Research Letters 13, 7(2019) 1-5
Nanosails Showcasing Zn3As2 as an Optoelectronic-Grade Earth Abundant Semiconductor
Physica Status Solidi: Rapid Research Letters 13, 7(2019) 1-5
Tedeschi D, De Luca M, Faria Junior P, del Águila A, Gao Q, Tan H, Scharf B, Christianen P, Jagadish C, Fabian J, Polimeni A
Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy
Physical Review B 99, 16(2019) 1-7
Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy
Physical Review B 99, 16(2019) 1-7
Wang N, Yuan X, Zhang X, Gao Q, Zhao B, Li L, Lockrey M, Tan H, Jagadish C, Caroff-Gaonac'h P
Shape Engineering of InP Nanostructures by Selective Area Epitaxy
ACS Nano 13, 6(2019) 7261-7269
Shape Engineering of InP Nanostructures by Selective Area Epitaxy
ACS Nano 13, 6(2019) 7261-7269
Wong-Leung J, Yang I, Li Z, Karuturi S, Fu L, Tan H, Jagadish C
Engineering III-V Semiconductor Nanowires for Device Applications
Advanced Materials 32, 18(2019) 1904359
Engineering III-V Semiconductor Nanowires for Device Applications
Advanced Materials 32, 18(2019) 1904359
Yang I, Li Z, Wong-Leung J, Zhu Y, Li Z, Gagrani A, Li L, Lockrey M, Nguyen H, Lu Y, Tan H, Jagadish C, Fu L
Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes
Nano Letters 19, 6(2019) 3821-3829
Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes
Nano Letters 19, 6(2019) 3821-3829
Yew R, Karuturi S, Liu J, Tan H, Wu Y, Jagadish C
Exploiting defects in TiO2 inverse opal for enhanced photoelectrochemical water splitting
Optics Express 27, 2(2019) 761-773
Exploiting defects in TiO2 inverse opal for enhanced photoelectrochemical water splitting
Optics Express 27, 2(2019) 761-773
Yu P, Besteiro L, Huang Y, Wu J, Fu L, Tan H, Jagadish C, Wiederrecht P, Govorov A, Wang Z
Broadband Metamaterial Absorbers
Advanced Optical Materials 7, 3(2019) 1-32
Broadband Metamaterial Absorbers
Advanced Optical Materials 7, 3(2019) 1-32
Yu P, Li Z, Wu T, Wang Y, Tong X, Li C, Wang Z, Wei S, Zhang Y, Liu H, Fu L, Zhang Y, Wu J, Tan H, Jagadish C, Wang Z
Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission
Journal of Spectroscopy and Dynamics 13, 11(2019) 13492-13500
Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission
Journal of Spectroscopy and Dynamics 13, 11(2019) 13492-13500
Yuan X, Li L, Li Z, Wang F, Wang N, Fu L, He J, Tan H, Jagadish C
Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires
Nanoscale 11, 18(2019) 9207-9215
Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires
Nanoscale 11, 18(2019) 9207-9215
Zhang X, Huang H, Yao X, Li Z, Zhou C, Zhang X, Chen P, Fu L, Zhou X, Wang J, Hu W, Lu W, Zou J, Tan H, Jagadish C
Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire
ACS Nano 13, 3(2019) 3492-3499
Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire
ACS Nano 13, 3(2019) 3492-3499
Zhong Z, Li X, Wu J, Li C, Xie R, Yuan X, Niu X, Wang W, Luo X, Zhang G, Wang Z, Tan H, Jagadish C
Wavelength-tunable InAsP quantum dots in InP nanowires
Applied Physics Letters 115, 5(2019) 1-5
Wavelength-tunable InAsP quantum dots in InP nanowires
Applied Physics Letters 115, 5(2019) 1-5
Butson J, Narangari P, Karuturi S, Yew R, Lysevych M, Tan H, Jagadish C
Photoelectrochemical studies of InGaN/GaN MQW photoanodes
Nanotechnology 29, 4(2018) 8
Photoelectrochemical studies of InGaN/GaN MQW photoanodes
Nanotechnology 29, 4(2018) 8
Chugh D, Wong-Leung J, Li L, Lysevych M, Tan H, Jagadish C
Flow modulation epitaxy of hexagonal boron nitride
2D Materials 5, 4(2018) 1-10
Flow modulation epitaxy of hexagonal boron nitride
2D Materials 5, 4(2018) 1-10
Gao H, Lysevych M, Tan H, Jagadish C, Zou J
The effect of Sn addition on GaAs nanowire grown by vapor-liquid-solid growth mechanism
Nanotechnology 29, 46(2018) 1-8
The effect of Sn addition on GaAs nanowire grown by vapor-liquid-solid growth mechanism
Nanotechnology 29, 46(2018) 1-8
Ghediya P, Chaudhuri T, Raj V, Chugh D, Vora K, Li L, Tan H, Jagadish C
Direct-coated Cu2SnS3 films from molecular solution inks for solar photovoltaics
Materials Science in Semiconductor Processing 88(2018) 120-126
Direct-coated Cu2SnS3 films from molecular solution inks for solar photovoltaics
Materials Science in Semiconductor Processing 88(2018) 120-126
Hurtado A, Jevtics D, Guilhabert B, Gao Q, Tan H, Jagadish C, Dawson M
Transfer printing of semiconductor nanowire lasers
I E T Optoelectronics 12, 1(2018) 30-35
Transfer printing of semiconductor nanowire lasers
I E T Optoelectronics 12, 1(2018) 30-35
Karuturi S, Shen H, Duong T, Narangari P, Yew R, Wong-Leung J, Catchpole K, Tan H, Jagadish C
Perovskite Photovoltaic Integrated CdS/TiO2 Photoanode for Unbiased Photoelectrochemical Hydrogen Generation
ACS Applied Materials and Interfaces 10, 28(2018) 23766-23773
Perovskite Photovoltaic Integrated CdS/TiO2 Photoanode for Unbiased Photoelectrochemical Hydrogen Generation
ACS Applied Materials and Interfaces 10, 28(2018) 23766-23773
Karuturi S, Yew R, Narangari P, Wong-Leung J, Li L, Vora K, Tan H, Jagadish C
CdS/TiO2 photoanodes via solution ion transfer method for highly efficient solar hydrogen generation
Nano Futures 2, 1(2018) 8
CdS/TiO2 photoanodes via solution ion transfer method for highly efficient solar hydrogen generation
Nano Futures 2, 1(2018) 8
Li F, Xie X, Gao Q, Tan L, Zhou Y, Yang Q, Ma J, Fu L, Jagadish C, Tan H
Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires
Nanotechnology 29, 22(2018) 1-10
Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires
Nanotechnology 29, 22(2018) 1-10
Li J, Chen X, Ma T, Cui X, Ren F, Gu S, Zhang R, Zheng Y, Ringer S, Fu L, Tan H, Jagadish C, Ye J, Cui X
Identification and modulation of electronic band structures of single-phase ?-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy
Applied Physics Letters 113, 4(2018) 1-6
Identification and modulation of electronic band structures of single-phase ?-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy
Applied Physics Letters 113, 4(2018) 1-6
Li Z, Tan H, Jagadish C, Fu L
III-V Semiconductor Single Nanowire Solar Cells: A Review
Advanced Materials Technologies 3, 9(2018) 12
III-V Semiconductor Single Nanowire Solar Cells: A Review
Advanced Materials Technologies 3, 9(2018) 12
Li Z, Yang I, Li L, Gao Q, Chong J, Li Z, Lockrey M, Tan H, Jagadish C, Fu L
Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance
Progress in Natural Science: Materials International 28, 2(2018) 178-182
Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance
Progress in Natural Science: Materials International 28, 2(2018) 178-182
Liu G, Karuturi S, Chen H, Spiccia L, Tan H, Jagadish C, Wang D, Simonov A, Tricoli A
Tuning the morphology and structure of disordered hematite photoanodes for improved water oxidation: A physical and chemical synergistic approach
Nano Energy 53(2018) 745-752
Tuning the morphology and structure of disordered hematite photoanodes for improved water oxidation: A physical and chemical synergistic approach
Nano Energy 53(2018) 745-752
Nie K, Tu X, Li J, Chen X, Ren F, Zhang G, Kang L, Gu S, Zhang R, Wu P, Zheng Y, Tan H, Jagadish C, Ye J
Tailored Emission Properties of ZnTe/ZnTe:O/ZnO Core-Shell Nanowires Coupled with an Al Plasmonic Bowtie Antenna Array
ACS Nano 12, 7(2018) 7327-7334
Tailored Emission Properties of ZnTe/ZnTe:O/ZnO Core-Shell Nanowires Coupled with an Al Plasmonic Bowtie Antenna Array
ACS Nano 12, 7(2018) 7327-7334
Parkinson P, Alanis J, Peng K, Saxena D, Mokkapati S, Jiang N, Fu L, Tan H, Jagadish C
Modal refractive index measurement in nanowire lasers - a correlative approach
Nano Futures 2, 035004(2018)
Modal refractive index measurement in nanowire lasers - a correlative approach
Nano Futures 2, 035004(2018)
Peng K, Parkinson P, Fu L, Gao Q, Boland J, Guo Y, Jiang N, Tan H, Johnston M, Jagadish C
Distinguishing cap and core contributions to the photoconductive terahertz response of single GaAs based core–shell–cap nanowire detectors
Lithuanian Journal of Physics 58, 1(2018) 15-23
Distinguishing cap and core contributions to the photoconductive terahertz response of single GaAs based core–shell–cap nanowire detectors
Lithuanian Journal of Physics 58, 1(2018) 15-23
Rahmani M, Leo G, Brener I, Zayats A, Maier S, De Angelis C, Tan H, Gili V, Karouta F, Oulton R, Vora K, Lysevych M, Staude I, Xu L, Miroshnichenko A, Jagadish C, Neshev D
Nonlinear frequency conversion in optical nanoantennas and metasurfaces: materials evolution and fabrication
Opto-Electronic Advances 1, 10(2018) 1-12
Nonlinear frequency conversion in optical nanoantennas and metasurfaces: materials evolution and fabrication
Opto-Electronic Advances 1, 10(2018) 1-12
Raj V, Santos T, Rougieux F, Vora K, Lysevych M, Fu L, Mokkapati S, Tan H, Jagadish C
Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer
Journal of Physics D: Applied Physics 51, 39(2018) 1-9
Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer
Journal of Physics D: Applied Physics 51, 39(2018) 1-9
Sun Z, Burgess T, Tan H, Jagadish C, Kogan A
Temperature effects in contacts between a metal and a semiconductor nanowire near the degenerate doping
Nanotechnology 29, 16(2018) 13
Temperature effects in contacts between a metal and a semiconductor nanowire near the degenerate doping
Nanotechnology 29, 16(2018) 13
Wan Y, Karuturi S, Samundsett C, Bullock J, Hettick M, Yan D, Peng J, Narangari P, Mokkapati S, Tan H, Jagadish C, Javey A, Cuevas A
Tantalum Oxide Electron-Selective Heterocontacts for Silicon Photovoltaics and Photoelectrochemical Water Reduction
Journal of Environmental Chemical Engineering 3, 1(2018) 125-131
Tantalum Oxide Electron-Selective Heterocontacts for Silicon Photovoltaics and Photoelectrochemical Water Reduction
Journal of Environmental Chemical Engineering 3, 1(2018) 125-131
Wei T, Mokkapati S, Li T, Lin C, Lin G, Jagadish C, He J
Nonlinear Absorption Applications of CH3NH3PbBr3 Perovskite Crystals
Advanced Functional Materials 28, 18(2018) 8
Nonlinear Absorption Applications of CH3NH3PbBr3 Perovskite Crystals
Advanced Functional Materials 28, 18(2018) 8
Xu W, Ren F, Jevtics D, Hurtado A, Li L, Gao Q, Ye J, Wang F, Guilhabert B, Fu L, Lu H, Zhang R, Tan H, Dawson M, Jagadish C
Vertically Emitting Indium Phosphide Nanowire Lasers
Nano Letters 18, 6(2018) 3414-3420
Vertically Emitting Indium Phosphide Nanowire Lasers
Nano Letters 18, 6(2018) 3414-3420
Yang H, Yang J, Ren X, Chen H, Jagadish C, Guo G, Jin C, Niu X, Guo G
Three-leaf dart-shaped single-crystal BN formation promoted by surface oxygen
Applied Physics Letters 113, 16(2018) 5
Three-leaf dart-shaped single-crystal BN formation promoted by surface oxygen
Applied Physics Letters 113, 16(2018) 5
Yang I, Zhang X, Zheng C, Gao Q, Li Z, Li L, Lockrey M, Nguyen H, Caroff-Gaonac'h P, Etheridge J, Tan H, Jagadish C, Wong-Leung J, Fu L
Radial Growth Evolution of InGaAs/InP Multi Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy
ACS Nano 12, 10(2018) 10374-10382
Radial Growth Evolution of InGaAs/InP Multi Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy
ACS Nano 12, 10(2018) 10374-10382
Yu P, Zhang F, Li Z, Zhong Z, Govorov A, Fu L, Tan H, Jagadish C, Wang Z
Giant optical pathlength enhancement in plasmonic thin film solar cells using core-shell nanoparticles
Journal of Physics D: Applied Physics 51, 29(2018) 8
Giant optical pathlength enhancement in plasmonic thin film solar cells using core-shell nanoparticles
Journal of Physics D: Applied Physics 51, 29(2018) 8
Yuan X, Yang J, He J, Tan H, Jagadish C
Role of surface energy in nanowire growth
Journal of Physics D: Applied Physics 51, 28(2018) 15
Role of surface energy in nanowire growth
Journal of Physics D: Applied Physics 51, 28(2018) 15
Zhao B, Lockrey M, Caroff-Gaonac'h P, Wang N, Li L, Wong-Leung J, Tan H, Jagadish C
The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods
Nanoscale 10, 23(2018) 11205-11210
The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods
Nanoscale 10, 23(2018) 11205-11210
Alanis J, Saxena D, Mokkapati S, Jiang N, Peng K, Tang X, Fu L, Tan H, Jagadish C, Parkinson P
Large-scale statistics for threshold optimization of optically pumped nanowire lasers
Nano Letters 17, 8(2017) 4860-4865
Large-scale statistics for threshold optimization of optically pumped nanowire lasers
Nano Letters 17, 8(2017) 4860-4865
Alexander-Webber J, Groschner C, Sagade A, Tainter G, Gonzalez-Zalba M, Di Pietro R, Wong-Leung J, Tan H, Jagadish C, Hofmann S, Joyce H
Engineering the Photoresponse of InAs Nanowires
ACS Applied Materials and Interfaces 9, 50(2017) 43993-44000
Engineering the Photoresponse of InAs Nanowires
ACS Applied Materials and Interfaces 9, 50(2017) 43993-44000
Baig S, Boland J, Damry D, Tan H, Jagadish C, Joyce H, Johnston M
An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires
Nano Letters 17, 4(2017) 2603-2610
An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires
Nano Letters 17, 4(2017) 2603-2610
Baig S, Boland J, Damry D, Tan H, Jagadish C, Johnston M, Joyce H
Choice of Polymer Matrix for a Fast Switchable III-V Nanowire Terahertz Modulator
MRS Advances 2, 28(2017) 1475-1480
Choice of Polymer Matrix for a Fast Switchable III-V Nanowire Terahertz Modulator
MRS Advances 2, 28(2017) 1475-1480
Berg A, Caroff-Gaonac'h P, Shahid N, Lockrey M, Yuan X, Borgström M, Tan H, Jagadish C
Growth and optical properties of InxGa1-xP nanowires synthesized by selective-area epitaxy
Nano Research 10, 2(2017) 672-682
Growth and optical properties of InxGa1-xP nanowires synthesized by selective-area epitaxy
Nano Research 10, 2(2017) 672-682
Carrad D, Mostert A, Ullah A, Burke A, Joyce H, Tan H, Jagadish C, Krogstrup P, Nygård J, Meredith P, Micolich A
Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry
Nano Letters 17, 2(2017) 827-833
Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry
Nano Letters 17, 2(2017) 827-833
Chen B, Fu X, Tang J, Lysevych M, Tan H, Jagadish C, Zewail A
Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy
PNAS - Proceedings of the National Academy of Sciences of the United States of America 114, 49(2017) 12876-12881
Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy
PNAS - Proceedings of the National Academy of Sciences of the United States of America 114, 49(2017) 12876-12881
Fonseka H, Ameruddin A, Caroff-Gaonac'h P, Tedeschi D, De Luca M, Mura F, Guo Y, Lysevych M, Wang F, Tan H, Polimeni A, Jagadish C
InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 µm wavelength range
Nanoscale 9, 36(2017) 13554-13562
InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 µm wavelength range
Nanoscale 9, 36(2017) 13554-13562
Gao Q, Tan H, Jagadish C, Wagner H, Kaveh M, Langbein W
Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires
Physical Review B 95, 4(2017)
Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires
Physical Review B 95, 4(2017)
Gareso P, Buda M, Tan H, Jagadish C
The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes
Indian Journal of Pure & Applied Physics 55, 5(2017) 333-338
The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes
Indian Journal of Pure & Applied Physics 55, 5(2017) 333-338
Gareso P, Tan H, Jagadish C
Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs quantum well laser structures
ECS Journal of Solid State Science and Technology 6, 8(2017) 122-126
Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs quantum well laser structures
ECS Journal of Solid State Science and Technology 6, 8(2017) 122-126
Gautam V, Naureen S, Shahid N, Gao Q, Wang Y, Nisbet D, Jagadish C, Daria V
Engineering Highly Interconnected Neuronal Networks on Nanowire Scaffolds
Nano Letters 17, 6(2017) 3369-3375
Engineering Highly Interconnected Neuronal Networks on Nanowire Scaffolds
Nano Letters 17, 6(2017) 3369-3375
Jevtics D, Hurtado A, Guilhabert B, McPhillimy J, Cantarella G, Gao Q, Tan H, Jagadish C, Strain M, Dawson M
Integration of Semiconductor Nanowire Lasers with Polymeric Waveguide Devices on a Mechanically Flexible Substrate
Nano Letters 17, 10(2017) 5990-5994
Integration of Semiconductor Nanowire Lasers with Polymeric Waveguide Devices on a Mechanically Flexible Substrate
Nano Letters 17, 10(2017) 5990-5994
Joyce H, Baig S, Parkinson P, Davies C, Boland J, Tan H, Jagadish C, Herz L, Johnston M
The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires
Journal of Physics D: Applied Physics 50, 22(2017)
The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires
Journal of Physics D: Applied Physics 50, 22(2017)
Kruk S, Camacho-Morales M, Xu L, Rahmani M, Smirnova D, Wang L, Tan H, Jagadish C, Neshev D, Kivshar Y
Nonlinear Optical Magnetism Revealed by Second-Harmonic Generation in Nanoantennas
Nano Letters 17, 6(2017) 3914-3918
Nonlinear Optical Magnetism Revealed by Second-Harmonic Generation in Nanoantennas
Nano Letters 17, 6(2017) 3914-3918
Li F, Li Z, Tan L, Zhou Y, Ma J, Lysevych M, Fu L, Tan H, Jagadish C
Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors
Nanotechnology 28, 12(2017) 9
Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors
Nanotechnology 28, 12(2017) 9
Narangari P, Karuturi S, Lysevych M, Tan H, Jagadish C
Improved photoelectrochemical performance of GaN nanopillar photoanodes
Nanotechnology 28, 15(2017)
Improved photoelectrochemical performance of GaN nanopillar photoanodes
Nanotechnology 28, 15(2017)
Nie K, Li J, Chen X, Xu Y, Tu X, Ren F, Du Q, Fu L, Kang L, Tang K, Gu S, Zhang R, Wu P, Zheng Y, Tan H, Jagadish C, Ye J
Extreme absorption enhancement in ZnTe:O/ZnO intermediate band core-shell nanowires by interplay of dielectric resonance and plasmonic bowtie nanoantennas
Scientific Reports 7, 1(2017) 7503-7503
Extreme absorption enhancement in ZnTe:O/ZnO intermediate band core-shell nanowires by interplay of dielectric resonance and plasmonic bowtie nanoantennas
Scientific Reports 7, 1(2017) 7503-7503
Pei J, Yang J, Wang X, Wang F, Mokkapati S, Lu T, Zheng J, Qin Q, Neshev D, Tan H, Jagadish C, Lu Y
Excited State Biexcitons in Atomically Thin MoSe2
ACS Nano 11, 7(2017) 7468-7475
Excited State Biexcitons in Atomically Thin MoSe2
ACS Nano 11, 7(2017) 7468-7475
Peng K, Parkinson P, Gao Q, Boland J, Li Z, Wang F, Mokkapati S, Fu L, Johnston M, Tan H, Jagadish C
Single n+-i-n+ InP Nanowires for Highly Sensitive Terahertz Detection
Nanotechnology 28, 12(2017) 9
Single n+-i-n+ InP Nanowires for Highly Sensitive Terahertz Detection
Nanotechnology 28, 12(2017) 9
Qu J, Du S, Burgess T, Wang C, Cui X, Gao Q, Wang W, Tan H, Liu H, Jagadish C, Zhang Y, Chen H, Khan M, Ringer S, Zheng R
3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Advanced Materials 29, 31(2017) 1-8
3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Advanced Materials 29, 31(2017) 1-8
Qu J, Du S, Burgess T, Wang C, Cui X, Gao Q, Wang W, Tan H, Liu H, Jagadish C, Zhang Y, Chen H, Khan M, Ringer S, Zheng R
3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Advanced Materials 29, 31(2017) 1-8
3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Advanced Materials 29, 31(2017) 1-8
Rota M, Ameruddin A, Wong-Leung J, Belabbes A, Gao Q, Miriametro A, Mura F, Tan H, Polimeni A, Bechstedt F, Jagadish C, Capizzi M
Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires
Journal of Physical Chemistry C 121, 30(2017) 16650-16656
Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires
Journal of Physical Chemistry C 121, 30(2017) 16650-16656
Ullah A, Joyce H, Tan H, Jagadish C, Micolich A
The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors
Nanotechnology 28, 45(2017) 454001 8
The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors
Nanotechnology 28, 45(2017) 454001 8
Xu W, Shi Y, Ye J, Ren F, Shadrivov I, Lu H, Liang L, Hu X, Jin B, Zhang R, Zheng Y, Tan H, Jagadish C
A Terahertz Controlled-NOT Gate Based on Asymmetric Rotation of Polarization in Chiral Metamaterials
Advanced Optical Materials 5, 18(2017) 1700108 7
A Terahertz Controlled-NOT Gate Based on Asymmetric Rotation of Polarization in Chiral Metamaterials
Advanced Optical Materials 5, 18(2017) 1700108 7
Yew R, Karuturi S, Tan H, Jagadish C
Nanostructured Photoelectrodes via Template-Assisted Fabrication
Semiconductors and Semimetals 97(2017) 289-313
Nanostructured Photoelectrodes via Template-Assisted Fabrication
Semiconductors and Semimetals 97(2017) 289-313
Yuan X, Guo Y, Caroff-Gaonac'h P, He J, Tan H, Jagadish C
Dopant-Free Twinning Superlattice Formation in InSb and InP Nanowires
Physica Status Solidi: Rapid Research Letters 11, 11(2017) 6
Dopant-Free Twinning Superlattice Formation in InSb and InP Nanowires
Physica Status Solidi: Rapid Research Letters 11, 11(2017) 6
Yuan X, Saxena D, Caroff-Gaonac'h P, Wang F, Lockrey M, Mokkapati S, Tan H, Jagadish C
Strong Amplified Spontaneous Emission from High Quality GaAs1-xSbx Single Quantum Well Nanowires
Journal of Physical Chemistry C 121, 15(2017) 8636-8644
Strong Amplified Spontaneous Emission from High Quality GaAs1-xSbx Single Quantum Well Nanowires
Journal of Physical Chemistry C 121, 15(2017) 8636-8644
Burgess T, Saxena D, Mokkapati S, Li Z, Hall C, Davis J, Wang Y, Smith L, Fu L, Caroff-Gaonac'h P, Tan H, Jagadish C
Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
Nature Communications 7(2016)
Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
Nature Communications 7(2016)
Camacho-Morales M, Kruk S, Rahmani M, Wang L, Xu L, Smirnova D, Solntsev A, Miroshnichenko A, Tan H, Karouta F, Naureen S, Vora K, De Angelis C, Jagadish C, Kivshar Y, Neshev D, Carletti L
Nonlinear Generation of Vector Beams from AlGaAs Nanoantennas
Nano Letters 16, 11(2016) 7191-7197
Nonlinear Generation of Vector Beams from AlGaAs Nanoantennas
Nano Letters 16, 11(2016) 7191-7197
Chan K, Vines L, Li L, Jagadish C, Svensson B, Wong-Leung J
Zn precipitation and Li depletion in Zn implanted ZnO
Applied Physics Letters 109, 2(2016) 022102-1-4
Zn precipitation and Li depletion in Zn implanted ZnO
Applied Physics Letters 109, 2(2016) 022102-1-4
Chen Y, Burgess T, An X, Mai Y, Tan H, Zou J, Ringer S, Jagadish C, Liao X
Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires
Nano Letters 16, 3(2016) 1911-1916
Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires
Nano Letters 16, 3(2016) 1911-1916
Gao Q, Dubrovskii V, Caroff-Gaonac'h P, Wong-Leung J, Li L, Guo Y, Fu L, Tan H, Jagadish C
Simultaneous Selective-Area and Vapor?Liquid?Solid Growth of InP Nanowire Arrays
Nano Letters 16, 7(2016) 4361-4367
Simultaneous Selective-Area and Vapor?Liquid?Solid Growth of InP Nanowire Arrays
Nano Letters 16, 7(2016) 4361-4367
Guilhabert B, Hurtado A, Jevtics D, Gao Q, Tan H, Jagadish C, Dawson M
Transfer Printing of Semiconductor Nanowires with Lasing Emission for Controllable Nanophotonic Device Fabrication
ACS Nano 10, 4(2016) 3951-3958
Transfer Printing of Semiconductor Nanowires with Lasing Emission for Controllable Nanophotonic Device Fabrication
ACS Nano 10, 4(2016) 3951-3958
Jagadish C, Yu P, Wu J, Liu S, Xiong J, Wang Z
Design and fabrication of silicon nanowires towards efficient solar cells
Nano Today 11, 6(2016) 704-737
Design and fabrication of silicon nanowires towards efficient solar cells
Nano Today 11, 6(2016) 704-737
Kaveh M, Gao Q, Jagadish C, Ge J, Duscher G, Wagner H
Controlling the exciton emission of gold coated GaAs-AlGaAs core-shell nanowires with an organic spacer layer
Nanotechnology 27, 48(2016)
Controlling the exciton emission of gold coated GaAs-AlGaAs core-shell nanowires with an organic spacer layer
Nanotechnology 27, 48(2016)
Liu G, Karuturi S, Simonov A, Fekete M, Chen H, Nasiri-Varg N, Le N, Narangari P, Lysevych M, Gengenbach T, Lowe A, Tan H, Jagadish C, Spiccia L, Tricoli A
Robust Sub-Monolayers of Co3O4 Nano-Islands: A Highly Transparent Morphology for Efficient Water Oxidation Catalysis
Advanced Energy Materials 6, 15(2016)
Robust Sub-Monolayers of Co3O4 Nano-Islands: A Highly Transparent Morphology for Efficient Water Oxidation Catalysis
Advanced Energy Materials 6, 15(2016)
Mokkapati S, Jagadish C
Review on photonic properties of nanowires for photovoltaics
Optics Express 24, 15(2016) 17345-17358
Review on photonic properties of nanowires for photovoltaics
Optics Express 24, 15(2016) 17345-17358
Narangari P, Naureen S, Mokkapati S, Vora K, Shahid N, Karouta F, Tan H, Jagadish C
Enhanced luminescence from GaN nanopillar arrays fabricated using a top-down process
Nanotechnology 27, 6(2016) 1-6
Enhanced luminescence from GaN nanopillar arrays fabricated using a top-down process
Nanotechnology 27, 6(2016) 1-6
Peng K, Parkinson P, Boland J, Gao Q, Wenas Y, Davies C, Li Z, Fu L, Johnston M, Tan H, Jagadish C
Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors
Nano Letters 16, 8(2016) 4925-4931
Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors
Nano Letters 16, 8(2016) 4925-4931
Rota M, Ameruddin A, Fonseka H, Gao Q, Mura F, Polimeni A, Miriametro A, Tan H, Jagadish C, Capizzi M
Bandgap Energy of Wurtzite InAs Nanowires
Nano Letters 16, 8(2016) 5197-5203
Bandgap Energy of Wurtzite InAs Nanowires
Nano Letters 16, 8(2016) 5197-5203
Saxena D, Jiang N, Yuan X, Mokkapati S, Guo Y, Tan H, Jagadish C
Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers
Nano Letters 16, 8(2016) 5080-5086
Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers
Nano Letters 16, 8(2016) 5080-5086
Shi T, Jackson H, Smith L, Jiang N, Tan H, Jagadish C
Thermal Delocalization of Excitons in GaAs/AlGaAs Quantum Well Tube Nanowires
Nano Letters 16, 2(2016) 1392-1397
Thermal Delocalization of Excitons in GaAs/AlGaAs Quantum Well Tube Nanowires
Nano Letters 16, 2(2016) 1392-1397
Soo M, Zheng K, Gao Q, Tan H, Jagadish C, Zou J
Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks
Nano Letters 16, 7(2016) 4189-4193
Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks
Nano Letters 16, 7(2016) 4189-4193
Soo M, Zheng K, Gao Q, Tan H, Jagadish C, Zou J
Temperature-dependent side-facets of GaAs nanopillars
Semiconductor Science and Technology 31, 9(2016)
Temperature-dependent side-facets of GaAs nanopillars
Semiconductor Science and Technology 31, 9(2016)
Soo M, Zheng K, Gao Q, Tan H, Jagadish C, Zou J
Mirror-twin induced bicrystalline InAs nanoleaves
Nano Research 9, 3(2016) 766-773
Mirror-twin induced bicrystalline InAs nanoleaves
Nano Research 9, 3(2016) 766-773
Tedeschi D, De Luca M, del Águila A, Gao Q, Ambrosio G, Capizzi M, Tan H, Christianen P, Jagadish C, Polimeni A
Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires
Nano Letters 16, 10(2016) 6213-6221
Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires
Nano Letters 16, 10(2016) 6213-6221
Tedeschi D, De Luca M, Fonseka H, Gao Q, Mura F, Tan H, Rubini S, Martelli F, Jagadish C, Capizzi M, Polimeni A
Long-Lived Hot Carriers in III-V Nanowires
Nano Letters 16, 5(2016) 3085-3093
Long-Lived Hot Carriers in III-V Nanowires
Nano Letters 16, 5(2016) 3085-3093
Toe W, Ortega-Piwonka I, Angstmann C, Gao Q, Tan H, Jagadish C, Henry B, Reece P
Nonconservative dynamics of optically trapped high-aspect-ratio nanowires
Physical Review E 93, 2(2016) 1-7
Nonconservative dynamics of optically trapped high-aspect-ratio nanowires
Physical Review E 93, 2(2016) 1-7
Xu W, Ren F, Ye J, Lu H, Liang L, Huang X, Liu M, Shadrivov I, Powell D, Yu G, Jin B, Zhang R, Zheng Y, Tan H, Jagadish C
Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays
Scientific Reports 6(2016)
Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays
Scientific Reports 6(2016)
Yang J, Wang Z, Wang F, Xu R, Tao J, Zhang S, Qin Q, Luther-Davies B, Jagadish C, Yu Z, Lu Y
Atomically thin optical lenses and gratings
Light: Science & Applications 5(2016)
Atomically thin optical lenses and gratings
Light: Science & Applications 5(2016)
Ye J, Gu S, Tan H, Jagadish C, Xian F
Structural transition, subgap states, and carrier transport in anion-engineered zinc oxynitride nanocrystalline films
Applied Physics Letters 109, 2(2016) 1-5
Structural transition, subgap states, and carrier transport in anion-engineered zinc oxynitride nanocrystalline films
Applied Physics Letters 109, 2(2016) 1-5
Zhang G, Guo X, Ren F, Li Y, Liu B, Ye J, Ge H, Xie Z, Zhang R, Tan H, Jagadish C
High-Brightness Polarized Green InGaN/GaN Light-Emitting Diode Structure with Al-Coated p-GaN Grating
ACS Photonics 3, 10(2016) 1912-1918
High-Brightness Polarized Green InGaN/GaN Light-Emitting Diode Structure with Al-Coated p-GaN Grating
ACS Photonics 3, 10(2016) 1912-1918
Zhang G, Li Z, Yuan X, Wang F, Fu L, Zhuang Z, Ren F, Liu B, Zhang R, Tan H, Jagadish C
Single nanowire green InGaN/GaN light emitting diodes
Nanotechnology 27, 43(2016) 1-7
Single nanowire green InGaN/GaN light emitting diodes
Nanotechnology 27, 43(2016) 1-7
Zhong Z, Li Z, Gao Q, Li Z, Peng K, Li L, Mokkapati S, Vora K, Wu J, Zhang G, Wang Z, Fu L, Tan H, Jagadish C
Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating
Nano Energy 28, -(2016) 106-114
Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating
Nano Energy 28, -(2016) 106-114
Ameruddin A, Caroff-Gaonac'h P, Tan H, Jagadish C, Dubrovskii V
Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires
Nanoscale 7, 39(2015) 16266-16272
Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires
Nanoscale 7, 39(2015) 16266-16272
Ameruddin A, Fonseka H, Caroff-Gaonac'h P, Wong-Leung J, Op het Veld R, Boland J, Johnston M, Tan H, Jagadish C
Inx Ga1-x As nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology
Nanotechnology 26, 20(2015) 1-10
In
Nanotechnology 26, 20(2015) 1-10
Badada B, Shi T, Jackson H, Smith L, Zheng C, Etheridge J, Gao Q, Tan H, Jagadish C
Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Localization
Nano Letters 15, 12(2015) 7847-7852
Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Localization
Nano Letters 15, 12(2015) 7847-7852
Badada B, Shi T, Jackson H, Smith L, Zheng C, Etheridge J, Gao Q, Tan H, Jagadish C
Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Localization
Nano Letters 15, 12(2015) 7847-7852
Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Localization
Nano Letters 15, 12(2015) 7847-7852
Burgess T, Caroff-Gaonac'h P, Wang Y, Badada B, Jackson H, Smith L, Guo Y, Tan H, Jagadish C
Zn3As2 Nanowires and Nanoplatelets: Highly Efficient Infrared Emission and Photodetection by an Earth Abundant Material
Nano Letters 15, 1(2015) 378-385
Zn3As2 Nanowires and Nanoplatelets: Highly Efficient Infrared Emission and Photodetection by an Earth Abundant Material
Nano Letters 15, 1(2015) 378-385
Chan K, Vines L, Li L, Jagadish C, Svensson B, Wong-Leung J
Equilibrium shape of nano-cavities in H implanted ZnO
Applied Physics Letters 106, 21(2015)
Equilibrium shape of nano-cavities in H implanted ZnO
Applied Physics Letters 106, 21(2015)
Chen Y, Gao Q, Wang Y, An X, Liao X, Mai Y, Tan H, Zou J, Ringer S, Jagadish C
Determination of Young's Modulus of Ultrathin Nanomaterials
Nano Letters 15, 8(2015) 5279-5283
Determination of Young's Modulus of Ultrathin Nanomaterials
Nano Letters 15, 8(2015) 5279-5283
Davies C, Parkinson P, Jiang N, Boland J, Conesa-Boj S, Tan H, Jagadish C, Herz L, Johnston M
Low ensemble disorder in quantum well tube nanowires
Nanoscale 7, 48(2015) 20531-20538
Low ensemble disorder in quantum well tube nanowires
Nanoscale 7, 48(2015) 20531-20538
De Luca M, Zilli A, Fonseka H, Mokkapati S, Miriametro A, Tan H, Smith L, Jagadish C, Capizzi M, Polimeni A
Polarized light absorption in wurtzite InP nanowire ensembles
Nano Letters 15, 2(2015) 998-1005
Polarized light absorption in wurtzite InP nanowire ensembles
Nano Letters 15, 2(2015) 998-1005
Kaveh M, Dyck O, Duscher G, Gao Q, Jagadish C, Wagner H
Exciton emission from hybrid organic and plasmonic polytype InP nanowire heterostructures
Materials Research Express 2, 4(2015) 1-13
Exciton emission from hybrid organic and plasmonic polytype InP nanowire heterostructures
Materials Research Express 2, 4(2015) 1-13
Li T, Lu H, Fu L, Tan H, Jagadish C, Dagenais M
Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells
Applied Physics Letters 106, 5(2015) 1-5
Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells
Applied Physics Letters 106, 5(2015) 1-5
Li Z, Wenas Y, Fu L, Mokkapati S, Tan H, Jagadish C
Influence of Electrical Design on Core-Shell GaAs Nanowire Array Solar Cells
IEEE Journal of Photovoltaics 5, 3(2015) 854-864
Influence of Electrical Design on Core-Shell GaAs Nanowire Array Solar Cells
IEEE Journal of Photovoltaics 5, 3(2015) 854-864
Li Z, Yuan X, Fu L, Peng K, Wang F, Fu X, Caroff-Gaonac'h P, White T, Jagadish C, Tan H
Room temperature GaAsSb single nanowire infrared photodetectors
Nanotechnology 26, 44(2015)
Room temperature GaAsSb single nanowire infrared photodetectors
Nanotechnology 26, 44(2015)
Lloyd-Hughes J, Failla M, Ye J, Jones S, Teo K, Jagadish C
Interfacial and bulk polaron masses in Zn1- x Mgx O/ZnO heterostructures examined by terahertz time-domain cyclotron spectroscopy
Applied Physics Letters 106, 20(2015) 1-4
Interfacial and bulk polaron masses in Zn
Applied Physics Letters 106, 20(2015) 1-4
Mokkapati S, Saxena D, Jiang N, Li L, Tan H, Jagadish C
An Order of Magnitude Increase in the Quantum Efficiency of (AI)GaAs Nanowires Using Hybrid Photonic-Plasmonic Modes
Nano Letters 15, 1(2015) 307-312
An Order of Magnitude Increase in the Quantum Efficiency of (AI)GaAs Nanowires Using Hybrid Photonic-Plasmonic Modes
Nano Letters 15, 1(2015) 307-312
Mokkapati S, Saxena D, Tan H, Jagadish C
Optical design of nanowire absorbers for wavelength selective photodetectors
Scientific Reports 5(2015)
Optical design of nanowire absorbers for wavelength selective photodetectors
Scientific Reports 5(2015)
Pemasiri K, Jackson H, Smith L, Wong B, Paiman S, Gao Q, Tan H, Jagadish C
Quantum confinement of excitons in wurtzite InP nanowires
Journal of Applied Physics 117, 19(2015) 1-4
Quantum confinement of excitons in wurtzite InP nanowires
Journal of Applied Physics 117, 19(2015) 1-4
Peng K, Parkinson P, Fu L, Gao Q, Jiang N, Guo Y, Wang F, Joyce H, Boland J, Tan H, Jagadish C, Johnston M
Single nanowire photoconductive terahertz detectors
Nano Letters 15, 1(2015) 206-210
Single nanowire photoconductive terahertz detectors
Nano Letters 15, 1(2015) 206-210
Saxena D, Wang F, Gao Q, Mokkapati S, Tan H, Jagadish C
Mode Profiling of Semiconductor Nanowire Lasers
Nano Letters 15, 8(2015) 5342-5348
Mode Profiling of Semiconductor Nanowire Lasers
Nano Letters 15, 8(2015) 5342-5348
Shi T, Jackson H, Smith L, Jiang N, Gao Q, Tan H, Jagadish C, Zheng C, Etheridge J
Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes
Nano Letters 15, 3(2015) 1876-1882
Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes
Nano Letters 15, 3(2015) 1876-1882
Sun W, Huang Y, Guo Y, Liao Z, Gao Q, Tan H, Jagadish C, Liao X, Zou J
Spontaneous formation of core-shell GaAsP nanowires and their enhanced electrical conductivity
Journal of Materials Chemistry C: materials for optical and electronic devices 3, 8(2015) 1745-1750
Spontaneous formation of core-shell GaAsP nanowires and their enhanced electrical conductivity
Journal of Materials Chemistry C: materials for optical and electronic devices 3, 8(2015) 1745-1750
Wang F, Gao Q, Peng K, Li Z, Li Z, Guo Y, Fu L, Smith L, Tan H, Jagadish C
Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping
Nano Letters 15, 5(2015) 3017-3023
Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping
Nano Letters 15, 5(2015) 3017-3023
Yuan X, Caroff-Gaonac'h P, Wang F, Guo Y, Wang Y, Jackson H, Smith L, Tan H, Jagadish C
Antimony Induced {112}A Faceted Triangular GaAs1-x Sbx /InP Core/Shell Nanowires and Their Enhanced Optical Quality
Advanced Functional Materials 25, 33(2015) 5300-5308
Antimony Induced {112}A Faceted Triangular GaAs
Advanced Functional Materials 25, 33(2015) 5300-5308
Yuan X, Caroff-Gaonac'h P, Wong-Leung J, Tan H, Jagadish C
Controlling the morphology, composition and crystal structure in gold-seeded GaAs1-xSbx nanowires
Nanoscale 7, 11(2015) 4995-5003
Controlling the morphology, composition and crystal structure in gold-seeded GaAs1-xSbx nanowires
Nanoscale 7, 11(2015) 4995-5003
Yuan X, Caroff-Gaonac'h P, Wong-Leung J, Fu L, Tan H, Jagadish C
Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering
Advanced Materials 27, 40(2015) 6096-6103
Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering
Advanced Materials 27, 40(2015) 6096-6103
Zilli A, De Luca M, Tedeschi D, Fonseka H, Miriametro A, Tan H, Jagadish C, Capizzi M, Polimeni A
Temperature dependence of interband transitions in wurtzite InP nanowires
ACS Nano 9, 4(2015) 4277-4287
Temperature dependence of interband transitions in wurtzite InP nanowires
ACS Nano 9, 4(2015) 4277-4287
Bao P, Wang Y, Cui X, Gao Q, Yen H, Liu H, Yeoh W, Liao X, Du S, Tan H, Jagadish C, Zou J, Ringer S, Zheng R
Atomic-scale observation of parallel development of super elasticity and reversible plasticity in GaAs nanowires
Applied Physics Letters 104, 2(2014) 1-4
Atomic-scale observation of parallel development of super elasticity and reversible plasticity in GaAs nanowires
Applied Physics Letters 104, 2(2014) 1-4
Carrad D, Burke A, Lyttleton R, Joyce H, Tan H, Jagadish C, Storm K, Linke H, Samuelson L, Micolich A
Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors
Nano Letters 14, 1(2014) 94-100
Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors
Nano Letters 14, 1(2014) 94-100
Chan K, Ton-That C, Vines L, Choi S, Phillips M, Svensson B, Jagadish C, Wong-Leung J
Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO
Journal of Physics D: Applied Physics 47, 34(2014) 1-6
Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO
Journal of Physics D: Applied Physics 47, 34(2014) 1-6
Chen Z, Lei W, Chen B, Wang Y, Liao X, Tan H, Zou J, Ringer S, Jagadish C
Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition
Applied Physics Letters 104, 2(2014) 022108
Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition
Applied Physics Letters 104, 2(2014) 022108
De Luca M, Polimeni A, Fonseka H, Meaney A, Christianen P, Maan J, Paiman S, Tan H, Mura F, Jagadish C, Capizzi M
Magneto-optical properties of wurtzite-phase InP nanowires
Nano Letters 14, 8(2014) 4250-4256
Magneto-optical properties of wurtzite-phase InP nanowires
Nano Letters 14, 8(2014) 4250-4256
Fonseka H, Caroff-Gaonac'h P, Wong-Leung J, Ameruddin A, Tan H, Jagadish C
Nanowires grown on InP (100): Growth Directions, Facets, Crystal Structures, and Relative Yield Control
ACS Nano 8, 7(2014) 6945-6954
Nanowires grown on InP (100): Growth Directions, Facets, Crystal Structures, and Relative Yield Control
ACS Nano 8, 7(2014) 6945-6954
Gao Q, Saxena D, Wang F, Fu L, Mokkapati S, Guo Y, Li L, Wong-Leung J, Caroff-Gaonac'h P, Tan H, Jagadish C
Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Nano Letters 14, 9(2014) 5206-5211
Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Nano Letters 14, 9(2014) 5206-5211
Jiang N, Wong-Leung J, Joyce H, Gao Q, Tan H, Jagadish C
Understanding the true shape of Au-catalyzed GaAs nanowires
Nano Letters 14, 10(2014) 5865-5872
Understanding the true shape of Au-catalyzed GaAs nanowires
Nano Letters 14, 10(2014) 5865-5872
Joyce H, Parkinson P, Jiang N, Docherty C, Gao Q, Tan H, Jagadish C, Herz L, Johnston M
"Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires"
Nano Letters 14, 10(2014) 5989-5994
"Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires"
Nano Letters 14, 10(2014) 5989-5994
Lysevych M, Tan H, Karouta F, Jagadish C
Effect of active region position in Fabry-Perot single transverse mode broad-waveguide InGaAsP/InP lasers
Optics Express 22, 7(2014) 8156-8164
Effect of active region position in Fabry-Perot single transverse mode broad-waveguide InGaAsP/InP lasers
Optics Express 22, 7(2014) 8156-8164
McKerracher I, Fu L, Tan H, Jagadish C
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors with bandpass guided-mode resonance filters
Physica Status Solidi: Rapid Research Letters 8, 1(2014) 69-73
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors with bandpass guided-mode resonance filters
Physica Status Solidi: Rapid Research Letters 8, 1(2014) 69-73
Menelaou C, Tierney S, Blouin N, Mitchell W, Tiwana P, McKerracher I, Jagadish C, Carrasco M, Herz L
Effect of nanocrystalline domains in photovoltaic devices with benzodithiophene-based donor-acceptor copolymers
Journal of Physical Chemistry C 118, 31(2014) 17351-17361
Effect of nanocrystalline domains in photovoltaic devices with benzodithiophene-based donor-acceptor copolymers
Journal of Physical Chemistry C 118, 31(2014) 17351-17361
Ren F, Xu W, Ye J, Ang K, Lu H, Zhang R, Yu M, Lo G, Tan H, Jagadish C
Second-order surface-plasmon assisted responsivity enhancement in germanium nano-photodetectors with bull's eye antennas
Optics Express 22, 13(2014) 15949-15956
Second-order surface-plasmon assisted responsivity enhancement in germanium nano-photodetectors with bull's eye antennas
Optics Express 22, 13(2014) 15949-15956
Wang Y, Jackson H, Smith L, Burgess T, Paiman S, Gao Q, Tan H, Jagadish C
Carrier thermalization dynamics in single zincblende and wurtzite InP nanowires
Nano Letters 14, 12(2014) 7153-7160
Carrier thermalization dynamics in single zincblende and wurtzite InP nanowires
Nano Letters 14, 12(2014) 7153-7160
Burgess T, Breuer S, Caroff-Gaonac'h P, Wong-Leung J, Gao Q, Tan H, Jagadish C
Twinning superlattice formation in GaAs nanowires
ACS Nano 7, 9(2013) 8105-8114
Twinning superlattice formation in GaAs nanowires
ACS Nano 7, 9(2013) 8105-8114
Chan K, Vines L, Johansen K, Monakhov E, Ye J, Parkinson P, Jagadish C, Svensson B, Wong-Leung J
Defect formation and thermal stability of H in high dose H implanted ZnO
Journal of Applied Physics 114, 8(2013)
Defect formation and thermal stability of H in high dose H implanted ZnO
Journal of Applied Physics 114, 8(2013)
Chen B, Gao Q, Chang L, Wang Y, Chen Z, Liao X, Tan H, Zou J, Ringer S, Jagadish C
Attraction of semiconductor nanowires: An in situ observation
Acta Materialia 61, 19(2013) 7166-7172
Attraction of semiconductor nanowires: An in situ observation
Acta Materialia 61, 19(2013) 7166-7172
Chen B, Gao Q, Wang Y, Liao X, Mai Y, Tan H, Zou J, Jagadish C, Ringer S
Anelastic behavior in GaAs semiconductor nanowires
Nano Letters 13, 7(2013) 3169-3172
Anelastic behavior in GaAs semiconductor nanowires
Nano Letters 13, 7(2013) 3169-3172
Chen B, Wang J, Gao Q, Chen Y, Liao X, Lu C, Tan H, Mai Y, Zou J, Ringer S, Gao H, Jagadish C
Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing
Nano Letters 13, 9(2013) 4369-4373
Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing
Nano Letters 13, 9(2013) 4369-4373
Chen Z, Lei W, Chen B, Wang Y, Liao X, Tan H, Zhou J, Ringer S, Jagadish C
Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy
Scripta Materialia 69, 8(2013) 638-641
Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy
Scripta Materialia 69, 8(2013) 638-641
Decker M, Kremers C, Minovich A, Staude I, Miroshnichenko A, Chigrin D, Neshev D, Jagadish C, Kivshar Y
Electro-optical switching by liquid-crystal controlled metasurfaces
Biomedical Optics Express 21, 7(2013) 8879-8885
Electro-optical switching by liquid-crystal controlled metasurfaces
Biomedical Optics Express 21, 7(2013) 8879-8885
Decker M, Staude I, Shishkin I, Samusev K, Parkinson P, Sreenivasan V, Minovich A, Miroshnichenko A, Zvyagin A, Jagadish C, Neshev D, Kivshar Y
Dual-channel spontaneous emission of quantum dots in magnetic metamaterials
Nature Communications 4(2013) 10
Dual-channel spontaneous emission of quantum dots in magnetic metamaterials
Nature Communications 4(2013) 10
Du S, Burgess T, Gault B, Gao Q, Bao P, Li L, Cui X, Yeoh W, Liu H, Yao L, Ceguerra A, Tan H, Jagadish C, Ringer S, Zheng R
Quantitative dopant distributions in GaAs nanowires using atom probe tomography
Ultramicroscopy 132(2013) 186-192
Quantitative dopant distributions in GaAs nanowires using atom probe tomography
Ultramicroscopy 132(2013) 186-192
Du S, Burgess T, Gault B, Gao Q, Bao P, Li L, Cui X, Yeoh W, Liu H, Yao L, Ceguerra A, Tan H, Jagadish C, Ringer S, Zheng R
Quantitative dopant distributions in GaAs nanowires using atom probe tomography
Ultramicroscopy 132(2013) 186-192
Quantitative dopant distributions in GaAs nanowires using atom probe tomography
Ultramicroscopy 132(2013) 186-192
Du S, Burgess T, Loi S, Gault B, Gao Q, Bao P, Li L, Cui X, Yeoh W, Tan H, Jagadish C, Ringer S, Zheng R
Full tip imaging in atom probe tomography
Ultramicroscopy 124(2013) 96-101
Full tip imaging in atom probe tomography
Ultramicroscopy 124(2013) 96-101
Du S, Burgess T, Loi S, Gault B, Gao Q, Bao P, Li L, Cui X, Yeoh W, Tan H, Jagadish C, Ringer S, Zheng R
Full tip imaging in atom probe tomography
Ultramicroscopy 124(2013) 96-101
Full tip imaging in atom probe tomography
Ultramicroscopy 124(2013) 96-101
Fickenscher M, Shi T, Jackson H, Smith L, Yarrison-Rice J, Zheng C, Miller P, Etheridge J, Gao Q, Wong B, Deshpande S, Tan H, Jagadish C
Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes
Nano Letters 13, 3(2013) 1016-1022
Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes
Nano Letters 13, 3(2013) 1016-1022
Fonseka H, Tan H, Wong-Leung J, Kang J, Parkinson P, Jagadish C
High vertical yield InP nanowire growth on Si(111) using a thin buffer layer
Nanotechnology 24, 46(2013) 9
High vertical yield InP nanowire growth on Si(111) using a thin buffer layer
Nanotechnology 24, 46(2013) 9
Guo Y, Burgess T, Gao Q, Tan H, Jagadish C, Zou J
Polarity-driven nonuniform composition in InGaAs nanowires
Nano Letters 13, 11(2013) 5085-5089
Polarity-driven nonuniform composition in InGaAs nanowires
Nano Letters 13, 11(2013) 5085-5089
Guo Y, Burgess T, Gao Q, Tan H, Jagadish C, Zou J
Polarity-driven Nonuniform Composition in InGaAs Nanowires
Nano Letters 13, 11(2013) 5085-5089
Polarity-driven Nonuniform Composition in InGaAs Nanowires
Nano Letters 13, 11(2013) 5085-5089
Guo Y, Xu H, Auchterlonie G, Burgess T, Joyce H, Tan H, Gao Q, Jagadish C, Shu H, Chen X, Lu W, Kim Y, Zou J
Phase separation induced by Au catalysts in ternary InGaAs nanowires
Nano Letters 13, 2(2013) 643-650
Phase separation induced by Au catalysts in ternary InGaAs nanowires
Nano Letters 13, 2(2013) 643-650
Jiang N, Gao Q, Parkinson P, Wong-Leung J, Mokkapati S, Breuer S, Tan H, Zheng C, Jagadish C, Etheridge J
Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell Nanowires through shell growth optimization
Nano Letters 13, 11(2013) 5135-5140
Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell Nanowires through shell growth optimization
Nano Letters 13, 11(2013) 5135-5140
Jolley G, Faraone L, Fu L, Lu H, Tan H, Jagadish C
A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination
Applied Physics Letters 102, 21(2013) 1-4
A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination
Applied Physics Letters 102, 21(2013) 1-4
Jolley G, Fu L, Lu H, Tan H, Jagadish C
The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells
Progress in Photovoltaics: Research and Applications 21, 4(2013) 736-746
The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells
Progress in Photovoltaics: Research and Applications 21, 4(2013) 736-746
Joyce H, Docherty C, Gao Q, Tan H, Jagadish C, Lloyd-Hughes J, Herz L, Johnston M
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
Nanotechnology 24, 21(2013) 7
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
Nanotechnology 24, 21(2013) 7
Kruk S, Helgert C, Decker M, Staude I, Menzel C, Etrich C, Rockstuhl C, Jagadish C, Pertsch T, Neshev D, Kivshar Y
Optical metamaterials with quasicrystalline symmetry: Symmetry-induced optical isotropy
Physical Review B: Condensed Matter and Materials 88, 20(2013) 1-5
Optical metamaterials with quasicrystalline symmetry: Symmetry-induced optical isotropy
Physical Review B: Condensed Matter and Materials 88, 20(2013) 1-5
Lei W, Tan H, Jagadish C
Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique
Applied Physics Letters 102, 3(2013) 1-4
Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique
Applied Physics Letters 102, 3(2013) 1-4
Little D, Kuruwita R, Joyce A, Gao Q, Burgess T, Jagadish C, Kane D
Phase-stepping interferometry of GaAs nanowires: Determining nano-wire radius
Applied Physics Letters 103, 16(2013) 161107
Phase-stepping interferometry of GaAs nanowires: Determining nano-wire radius
Applied Physics Letters 103, 16(2013) 161107
Lysevych M, Tan H, Karouta F, Fu L, Jagadish C
Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers
Optics Express 21, 7(2013) 8276-8285
Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers
Optics Express 21, 7(2013) 8276-8285
McKerracher I, Fu L, Tan H, Jagadish C
Integration of bandpass guided-mode resonance filters with mid-wavelength infrared photodetectors
Journal of Physics D: Applied Physics 46, 9(2013) 1-8
Integration of bandpass guided-mode resonance filters with mid-wavelength infrared photodetectors
Journal of Physics D: Applied Physics 46, 9(2013) 1-8
Mironov E, Li Z, Hattori H, Vora K, Tan H, Jagadish C
Titanium Nano-Antenna for High-Power Pulsed Operation
Journal of Lightwave Technology 31, 15(2013) 2459-2466
Titanium Nano-Antenna for High-Power Pulsed Operation
Journal of Lightwave Technology 31, 15(2013) 2459-2466
Mironov E, Li Z, Hattori H, Vora K, Tan H, Jagadish C
Titanium Nano-Antenna for High-Power Pulsed Operation
Journal of Lightwave Technology 31, 15(2013) 2459-2466
Titanium Nano-Antenna for High-Power Pulsed Operation
Journal of Lightwave Technology 31, 15(2013) 2459-2466
Mokkapati S, Saxena D, Tan H, Jagadish C
Design considerations for semiconductor nanowire-plasmonic nanoparticle coupled systems for high quantum efficiency nanowires
Small 9, 23(2013) 3964-3969
Design considerations for semiconductor nanowire-plasmonic nanoparticle coupled systems for high quantum efficiency nanowires
Small 9, 23(2013) 3964-3969
Paiman S, Gao Q, Tan H, Jagadish C, Zhang X, Zou J
Effects of growth rate on InP nanowires morphology and crystal structure
Journal of Crystal Growth 383(2013) 100-105
Effects of growth rate on InP nanowires morphology and crystal structure
Journal of Crystal Growth 383(2013) 100-105
Parkinson P, Lee Y, Fu L, Breuer S, Tan H, Jagadish C
Three-dimensional in situ photocurrent mapping for nanowire photovoltaics
Nano Letters 13, 4(2013) 1405-1409
Three-dimensional in situ photocurrent mapping for nanowire photovoltaics
Nano Letters 13, 4(2013) 1405-1409
Perera S, Fickenscher M, Shi T, Jackson H, Smith L, Yarrison-Rice J, Paiman S, Gao Q, Tan H, Jagadish C
Illuminating the second conduction band and spin-orbit energy in single wurtzite InP nanowires
Nano Letters 13, 11(2013) 5367-5372
Illuminating the second conduction band and spin-orbit energy in single wurtzite InP nanowires
Nano Letters 13, 11(2013) 5367-5372
Saxena D, Mokkapati S, Parkinson P, Jiang N, Gao Q, Tan H, Jagadish C
Optically pumped room-temperature GaAs nanowire lasers
Nature Photonics 7, 12(2013) 963-968
Optically pumped room-temperature GaAs nanowire lasers
Nature Photonics 7, 12(2013) 963-968
Staude I, Decker M, Ventura M, Jagadish C, Neshev D, Gu M, Kivshar Y
Hybrid high-resolution three-dimensional nanofabrication for metamaterials and nanoplasmonics
Advanced Materials 25, 9(2013) 1260-1264
Hybrid high-resolution three-dimensional nanofabrication for metamaterials and nanoplasmonics
Advanced Materials 25, 9(2013) 1260-1264
Sun W, Guo Y, Xu H, Liao Z, Gao Q, Tan H, Jagadish C, Zou J
Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Journal of Physical Chemistry C 117, 37(2013) 19234-19238
Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Journal of Physical Chemistry C 117, 37(2013) 19234-19238
Sun W, Guo Y, Xu H, Gao Q, Tan H, Jagadish C, Zou J
Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate
Applied Physics Letters 103, 22(2013)
Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate
Applied Physics Letters 103, 22(2013)
Sun W, Guo Y, Xu H, Liao Z, Gao Q, Tan H, Jagadish C, Zou J
Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Journal of Physical Chemistry C 117, 37(2013) 19234-19238
Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Journal of Physical Chemistry C 117, 37(2013) 19234-19238
Sun W, Guo Y, Xu H, Gao Q, Tan H, Jagadish C, Zou J
Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate
Applied Physics Letters 103, 22(2013)
Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate
Applied Physics Letters 103, 22(2013)
Turner S, Mokkapati S, Jolley G, Fu L, Tan H, Jagadish C
Periodic dielectric structures for light-trapping in InGaAs/GaAs quantum well solar cells
Optics Express 21, 9(2013) A324-A335
Periodic dielectric structures for light-trapping in InGaAs/GaAs quantum well solar cells
Optics Express 21, 9(2013) A324-A335
Ullah A, Joyce H, Burke A, Wong-Leung J, Tan H, Jagadish C, Micolich A
Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
Physica Status Solidi: Rapid Research Letters 7, 10(2013) 911-914
Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
Physica Status Solidi: Rapid Research Letters 7, 10(2013) 911-914
Wang F, Toe W, Lee W, Gao Q, McGloin D, Tan H, Jagadish C, Reece P
Resolving stable axial trapping points of nanowires in an optical tweezers using photoluminescence mapping
Nano Letters 13, 3(2013) 1185-1191
Resolving stable axial trapping points of nanowires in an optical tweezers using photoluminescence mapping
Nano Letters 13, 3(2013) 1185-1191
Wang F, Toe W, Lee W, Gao Q, McGloin D, Tan H, Jagadish C, Reece P
Resolving stable axial trapping points of nanowires in an optical tweezers using photoluminescence mapping
Nano Letters 13, 3(2013) 1185-1191
Resolving stable axial trapping points of nanowires in an optical tweezers using photoluminescence mapping
Nano Letters 13, 3(2013) 1185-1191
Xu H, Guo Y, Liao Z, Sun W, Gao Q, Tan H, Jagadish C, Zou J
Catalyst size dependent growth of Pd-catalyzed one-dimensional InAs nanostructures
Applied Physics Letters 102, 20(2013) 1-5
Catalyst size dependent growth of Pd-catalyzed one-dimensional InAs nanostructures
Applied Physics Letters 102, 20(2013) 1-5
Ye J, Lim S, Gu S, Tan H, Jagadish C, Teo K
Origin and transport properties of two-dimensional electron gas at ZnMgO/ZnO interface grown by MOVPE
Physica Status Solidi C 10, 10(2013) 1268-1271
Origin and transport properties of two-dimensional electron gas at ZnMgO/ZnO interface grown by MOVPE
Physica Status Solidi C 10, 10(2013) 1268-1271
Yong C, Wong-Leung J, Joyce H, Lloyd-Hughes J, Gao Q, Tan H, Jagadish C, Johnson M, Herz L
Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions
Nano Letters 13, 9(2013) 4280-4287
Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions
Nano Letters 13, 9(2013) 4280-4287
Zheng C, Wong-Leung J, Gao Q, Tan H, Jagadish C, Etheridge J
Polarity-driven 3-fold symmetry of GaAs/AlGaAs core multishell nanowires
Nano Letters 13, 8(2013) 3742-3748
Polarity-driven 3-fold symmetry of GaAs/AlGaAs core multishell nanowires
Nano Letters 13, 8(2013) 3742-3748
Charnvanichborikarn S, Wong-Leung J, Jagadish C, Williams J
Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon
MRS Communications 2, 3(2012) 101-105
Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon
MRS Communications 2, 3(2012) 101-105
Chen Z, Lei W, Chen B, Wang Y, Liao X, Tan H, Zou J, Ringer S, Jagadish C
Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
Nanoscale Research Letters 7, 1(2012) 486-486
Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
Nanoscale Research Letters 7, 1(2012) 486-486
Jiang N, Parkinson P, Breuer S, Gao Q, Tan H, Wong-Leung J, Jagadish C
Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1?xAs core-shell nanowires
Applied Physics Letters 101, 2(2012) 02311-1 to 02311-4
Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1?xAs core-shell nanowires
Applied Physics Letters 101, 2(2012) 02311-1 to 02311-4
Johnson B, Villis B, Burgess J, Stavrias N, McCallum J, Charnvanichborikarn S, Wong-Leung J, Jagadish C, Williams J
Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
Journal of Applied Physics 111, 9(2012) 094910/1-8
Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
Journal of Applied Physics 111, 9(2012) 094910/1-8
Jolley G, McKerracher I, Fu L, Tan H, Jagadish C
The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors
Journal of Applied Physics 111, 12(2012)
The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors
Journal of Applied Physics 111, 12(2012)
Joyce H, Wong-Leung J, Yong C, Docherty C, Paiman S, Gao Q, Tan H, Jagadish C, Lloyd-Hughes J, Herz L, Johnston M
Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy
Nano Letters 12, 10(2012) 5325-5330
Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy
Nano Letters 12, 10(2012) 5325-5330
Kang J, Gao Q, Parkinson P, Joyce H, Tan H, Jagadish C, Guo Y, Xu H, Zou J, Kim Y
Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates
Nanotechnology 23, 41(2012) 1-11
Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates
Nanotechnology 23, 41(2012) 1-11
Karouta F, Vora K, Tian J, Jagadish C
Structural, Compositional and Optical properties of PECVD silicon nitride layers
Journal of Physics D: Applied Physics 45, 44(2012) 1-10
Structural, Compositional and Optical properties of PECVD silicon nitride layers
Journal of Physics D: Applied Physics 45, 44(2012) 1-10
Kim J, Moon S, Kim Y, Chen Z, Zou J, Choi D, Joyce H, Gao Q, Tan H, Jagadish C
Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process
Nanotechnology 23, 11(2012) 115603-115603
Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process
Nanotechnology 23, 11(2012) 115603-115603
Kim J, Moon S, Yoon H, Jung J, Kim Y, Chen Z, Zou J, Choi D, Joyce H, Gao Q, Tan H, Jagadish C
Taper-free and Vertically Oriented Ge Nanowires on Ge/Si Substrates Grown by a Two-Temperature Process
Crystal Growth & Design 12, 1(2012) 135-141
Taper-free and Vertically Oriented Ge Nanowires on Ge/Si Substrates Grown by a Two-Temperature Process
Crystal Growth & Design 12, 1(2012) 135-141
Li L, Guo Y, Cui X, Zheng R, Ohtani K, Kong C, Ceguerra A, Moody M, Ye J, Tan H, Jagadish C, Liu H, Stampfl C, Ohno H, Ringer S, Matsukura F
Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
Physical Review B: Condensed Matter and Materials 85, 17(2012) 1-8
Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
Physical Review B: Condensed Matter and Materials 85, 17(2012) 1-8
Li L, Guo Y, Cui X, Zheng R, Ohtani K, Kong C, Ceguerra A, Moody M, Ye J, Tan H, Jagadish C, Liu H, Stampfl C, Ohno H, Ringer S, Matsukura F
Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
Physical Review B 85, 17(2012) 1-8
Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
Physical Review B 85, 17(2012) 1-8
Li Z, Hattori H, Parkinson P, Tian J, Fu L, Tan H, Jagadish C
A plasmonic staircase nano-antenna device with strong electric field enhancement for surface enhanced Raman scattering (SERS) applications
Journal of Physics D: Applied Physics 45, 30(2012) 1-5
A plasmonic staircase nano-antenna device with strong electric field enhancement for surface enhanced Raman scattering (SERS) applications
Journal of Physics D: Applied Physics 45, 30(2012) 1-5
Lu H, Mokkapati S, Fu L, Jolley G, Tan H, Jagadish C
Plasmonic quantum dot solar cells for enhanced infrared response
Applied Physics Letters 100, 10(2012) 1 - 4
Plasmonic quantum dot solar cells for enhanced infrared response
Applied Physics Letters 100, 10(2012) 1 - 4
McKerracher I, Fu L, Tan H, Jagadish C
Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers
Journal of Applied Physics 112, 11(2012) 1-11
Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers
Journal of Applied Physics 112, 11(2012) 1-11
Minovich A, Farnell J, Neshev D, McKerracher I, Karouta F, Tian J, Powell D, Shadrivov I, Tan H, Jagadish C, Kivshar Y
Liquid crystal based nonlinear fishnet metamaterials
Applied Physics Letters 100, 12(2012) 121113-1-4
Liquid crystal based nonlinear fishnet metamaterials
Applied Physics Letters 100, 12(2012) 121113-1-4
Mokkapati S, Saxena D, Jiang N, Parkinson P, Wong-Leung J, Gao Q, Tan H, Jagadish C
Polarization Tunable, Multicolor Emission from Core-Shell Photonic III-V Semiconductor Nanowires
Nano Letters 12, 12(2012) 6428-6431
Polarization Tunable, Multicolor Emission from Core-Shell Photonic III-V Semiconductor Nanowires
Nano Letters 12, 12(2012) 6428-6431
Montazeri M, Jackson H, Smith L, Yarrison-Rice J, Kang J, Gao Q, Tan H, Jagadish C
Transient Rayleigh scattering: A new probe of picosecond carrier dynamics in a single semiconductor nanowire
Nano Letters 12, 10(2012) 5389-5395
Transient Rayleigh scattering: A new probe of picosecond carrier dynamics in a single semiconductor nanowire
Nano Letters 12, 10(2012) 5389-5395
Parkinson P, Jiang N, Gao Q, Tan H, Jagadish C
Direct-write non-linear photolithography for semiconductor nanowire characterization
Nanotechnology 23, 33(2012) 1-5
Direct-write non-linear photolithography for semiconductor nanowire characterization
Nanotechnology 23, 33(2012) 1-5
Ren Q, Lu J, Tan H, Wu S, Sun L, Zhang W, Xie W, Sun Z, Zhu Y, Jagadish C, Shen S, Chen Z
Spin-resolved purcell effect in a quantum dot microcavity system
Nano Letters 12, 7(2012) 3455-3459
Spin-resolved purcell effect in a quantum dot microcavity system
Nano Letters 12, 7(2012) 3455-3459
Staude I, Maksymov I, Decker M, Miroshnichenko A, Neshev D, Jagadish C, Kivshar Y
Broadband scattering by tapered nanoantennas
Physica Status Solidi: Rapid Research Letters 6, 12(2012) 466-468
Broadband scattering by tapered nanoantennas
Physica Status Solidi: Rapid Research Letters 6, 12(2012) 466-468
Sun M, Joyce H, Gao Q, Tan H, Jagadish C, Ning C
Removal of Surface States and Recovery of Band-Edge Emission in InAs Nanowires through Surface Passivation
Nano Letters 12, 7(2012) 3378-3384
Removal of Surface States and Recovery of Band-Edge Emission in InAs Nanowires through Surface Passivation
Nano Letters 12, 7(2012) 3378-3384
Vines L, Wong-Leung J, Jagadish C, Quemener V, Monakhov E, Svensson B
Acceptor-like deep level defects in ion-implanted ZnO
Applied Physics Letters 100, 21(2012)
Acceptor-like deep level defects in ion-implanted ZnO
Applied Physics Letters 100, 21(2012)
Vines L, Wong-Leung J, Jagadish C, Monakhov E, Svensson B
Ion implantation induced defects in ZnO
Physica B 407, 10(2012) 1481-1484
Ion implantation induced defects in ZnO
Physica B 407, 10(2012) 1481-1484
Xia H, Lu S, Li T, Parkinson P, Liao Z, Liu F, Lu W, Hu W, Chen P, Xu H, Zou J, Jagadish C
Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping
ACS Nano 6, 7(2012) 6005-6013
Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping
ACS Nano 6, 7(2012) 6005-6013
Xu H, Guo Y, Sun W, Liao Z, Burgess T, Lu H, Gao Q, Tan H, Jagadish C, Zou J
Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
Nanoscale Research Letters 7, 1(2012) 1-6
Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
Nanoscale Research Letters 7, 1(2012) 1-6
Xu H, Guo Y, Sun W, Liao Z, Burgess T, Lu H, Gao Q, Tan H, Jagadish C, Zou J
Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
Nanoscale Research Letters 7, 1(2012) 1-6
Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
Nanoscale Research Letters 7, 1(2012) 1-6
Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Tan H, Jagadish C, Zou J
Defect-Free < 110 > Zinc-Blende Structured InAs Nanowires Catalyzed by Palladium
Nano Letters 12, 11(2012) 5744-5749
Defect-Free < 110 > Zinc-Blende Structured InAs Nanowires Catalyzed by Palladium
Nano Letters 12, 11(2012) 5744-5749
Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Jiang N, Tan H, Jagadish C, Zou J
High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films
Crystal Growth & Design 12, 4(2012) 2018-2022
High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films
Crystal Growth & Design 12, 4(2012) 2018-2022
Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Jiang N, Tan H, Jagadish C, Zou J
High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films
Crystal Growth & Design 12, 4(2012) 2018-2022
High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films
Crystal Growth & Design 12, 4(2012) 2018-2022
Ye J, Lim S, Bosman M, Gu S, Zheng Y, Tan H, Jagadish C, Sun X, Teo K
Spin-polarized Wide Electron Slabs in Functionally Graded Polar Oxide Heterostructures
Scientific Reports 2(2012)
Spin-polarized Wide Electron Slabs in Functionally Graded Polar Oxide Heterostructures
Scientific Reports 2(2012)
Ye J, Parkinson P, Ren F, Gu S, Tan H, Jagadish C
Raman probing of competitive laser heating and local recrystallization effect in ZnO nanocrystals
Biomedical Optics Express 20, 21(2012) 23281-23289
Raman probing of competitive laser heating and local recrystallization effect in ZnO nanocrystals
Biomedical Optics Express 20, 21(2012) 23281-23289
Yong C, Joyce H, Lloyd-Hughes J, Gao Q, Tan H, Jagadish C, Johnston M, Herz L
Ultrafast Dynamics of Exciton Formation in Semiconductor Nanowires
Small 8, 11(2012) 1725-1731
Ultrafast Dynamics of Exciton Formation in Semiconductor Nanowires
Small 8, 11(2012) 1725-1731
Yong C, Noori K, Gao Q, Joyce H, Tan H, Jagadish C, Giustino F, Johnston M, Herz L
Strong Carrier Lifetime Enhancement in GaAs Nanowires coated with Semiconducting Polymer
Nano Letters 12, 12(2012) 6293-6301
Strong Carrier Lifetime Enhancement in GaAs Nanowires coated with Semiconducting Polymer
Nano Letters 12, 12(2012) 6293-6301
Andres-Arroyo A, Reece P, Johnson C, Vora K, Karouta F, Jagadish C
Wavelength selective filter based on polarization control in a photonic bandgap structure with a defect
Optics Express 19, 25(2011) 25643 - 25650
Wavelength selective filter based on polarization control in a photonic bandgap structure with a defect
Optics Express 19, 25(2011) 25643 - 25650
Davis J, Hall C, Dao L, Nugent K, Quiney H, Tan H, Jagadish C
Three-dimensional electronic spectroscopy of excitons in asymmetric double quantum wells
Journal of Chemical Physics 135, 4(2011) 1-9
Three-dimensional electronic spectroscopy of excitons in asymmetric double quantum wells
Journal of Chemical Physics 135, 4(2011) 1-9
Du S, Fu L, Tan H, Jagadish C
Investigation of ion implantation induced intermixing in InP based quaternary quantum wells
Journal of Physics D: Applied Physics 44, 47(2011) 1-7
Investigation of ion implantation induced intermixing in InP based quaternary quantum wells
Journal of Physics D: Applied Physics 44, 47(2011) 1-7
Fickenscher M, Jackson H, Smith L, Yarrison-Rice J, Kang J, Paiman S, Gao Q, Tan H, Jagadish C
Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires
Applied Physics Letters 99, 26(2011) 1-4
Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires
Applied Physics Letters 99, 26(2011) 1-4
Fraser M, Tan H, Jagadish C
Selective confinement of macroscopic long-lifetime exciton and trion populations
Physical Review B 84, 24(2011) 1-5
Selective confinement of macroscopic long-lifetime exciton and trion populations
Physical Review B 84, 24(2011) 1-5
Gao Q, Joyce H, Paiman S, Kang J, Tan H, Kim Y, Smith L, Jackson H, Yarrison-Rice J, Zou J, Jagadish C
III-V compound semiconductor nanowires for optoelectronic device applications
International Journal of High Speed Electronics and Systems 20, 1(2011) 131-141
III-V compound semiconductor nanowires for optoelectronic device applications
International Journal of High Speed Electronics and Systems 20, 1(2011) 131-141
Gao Q, Tan H, Jackson H, Smith L, Yarrison-Rice J, Zou J, Jagadish C
Growth and properties of III-V compound semiconductor heterostructure nanowires
Semiconductor Science and Technology 26, 1(2011) 1-10
Growth and properties of III-V compound semiconductor heterostructure nanowires
Semiconductor Science and Technology 26, 1(2011) 1-10
Handapangoda D, Premaratne M, Rukhlenko I, Jagadish C
Optimal design of composite nanowires for extended reach of surface plasmon-polaritons
Optics Express 19, 17(2011) 16058 -16074
Optimal design of composite nanowires for extended reach of surface plasmon-polaritons
Optics Express 19, 17(2011) 16058 -16074
Headley C, Fu L, Parkinson P, Xu X, Lloyd-Hughes J, Jagadish C, Johnston M
Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1(2011) 17-21
Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1(2011) 17-21
Headley C, Fu L, Parkinson P, Xu X, Lloyd-Hughes J, Jagadish C, Johnston M
Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1(2011) 17-21
Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1(2011) 17-21
Joyce H, Gao Q, Tan H, Jagadish C, Kim Y, Zou J, Smith L, Jackson H, Yarrison-Rice J, Parkinson P, Johnston M
III-V semiconductor nanowires for optoelectronic device applications
Progress in Quantum Electronics 35, 2-3(2011) 23-75
III-V semiconductor nanowires for optoelectronic device applications
Progress in Quantum Electronics 35, 2-3(2011) 23-75
Joyce H, Gao Q, Tan H, Jagadish C, Kim Y, Zou J, Smith L, Jackson H, Yarrison-Rice J, Parkinson P, Johnston M
III-V semiconductor nanowires for optoelectronic device applications
Progress in Quantum Electronics 35, 2-3(2011) 23-75
III-V semiconductor nanowires for optoelectronic device applications
Progress in Quantum Electronics 35, 2-3(2011) 23-75
Joyce H, Gao Q, Wong-Leung J, Kim Y, Tan H, Jagadish C
Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 17, 4(2011) 766-778
Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 17, 4(2011) 766-778
Kang J, Gao Q, Joyce H, Tan H, Jagadish C, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Defect-free GaAs/AlGaAs Core-shell nanowires on Si substrates
Crystal Growth & Design 11, 7(2011) 3109-3114
Defect-free GaAs/AlGaAs Core-shell nanowires on Si substrates
Crystal Growth & Design 11, 7(2011) 3109-3114
Kang J, Gao Q, Joyce H, Tan H, Jagadish C, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
Crystal Growth and Design 11, 7(2011) 3109-3114
Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
Crystal Growth and Design 11, 7(2011) 3109-3114
Lei W, Tan H, Jagadish C
Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures via Sb exposure
Applied Physics Letters 99, 19(2011) 1-3
Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures via Sb exposure
Applied Physics Letters 99, 19(2011) 1-3
Li Z, Hattori H, Fu L, Tan H, Jagadish C
Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18(2011) 2690-2697
Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18(2011) 2690-2697
Li Z, Hattori H, Fu L, Tan H, Jagadish C
Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18(2011) 2690-2697
Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18(2011) 2690-2697
Lu H, Fu L, Jolley G, Tan H, Rao Tatavarti S, Jagadish C
Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells
Applied Physics Letters 98, 18(2011) 183509/1-3
Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells
Applied Physics Letters 98, 18(2011) 183509/1-3
Lysevych M, Tan H, Karouta F, Jagadish C
Single-step RIE fabrication process of low loss InP waveguide using CH4/H2 chemistry
Journal of the Electrochemical Society 158, 3(2011) H281-H284
Single-step RIE fabrication process of low loss InP waveguide using CH4/H2 chemistry
Journal of the Electrochemical Society 158, 3(2011) H281-H284
McCallum J, Villis B, Johnson B, Stavrias N, Burgess J, Charnvanichborikarn S, Wong-Leung J, Williams J, Jagadish C
Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon
Physica Status Solidi A 208, 3(2011) 620-623
Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon
Physica Status Solidi A 208, 3(2011) 620-623
McKerracher I, Wong-Leung J, Jolley G, Fu L, Tan H, Jagadish C
Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors
IEEE Journal of Quantum Electronics 47, 5(2011) 577-590
Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors
IEEE Journal of Quantum Electronics 47, 5(2011) 577-590
Menon R, Gupta V, Tan H, Sreenivas K, Jagadish C
Origin of stress in radio frequency magnetron sputtered zinc oxide thin films
Journal of Applied Physics 109, 6(2011) 064905 6
Origin of stress in radio frequency magnetron sputtered zinc oxide thin films
Journal of Applied Physics 109, 6(2011) 064905 6
Messing M, Wong-Leung J, Zanolli Z, Joyce H, Tan H, Gao Q, Wallenberg L, Johansson J, Jagadish C
Growth of Straight InAs-on-GaAs Nanowire Heterostructures
Nano Letters 11, 9(2011) 3899-3905
Growth of Straight InAs-on-GaAs Nanowire Heterostructures
Nano Letters 11, 9(2011) 3899-3905
Montazeri M, Wade A, Fickenscher M, Jackson H, Smith L, Yarrison-Rice J, Gao Q, Tan H, Jagadish C
Photomodulated Rayleigh Scattering of Single Semiconductor Nanowires: Probing Electronic Band Structure
Nano Letters 11, 10(2011) 4329-4336
Photomodulated Rayleigh Scattering of Single Semiconductor Nanowires: Probing Electronic Band Structure
Nano Letters 11, 10(2011) 4329-4336
Reece P, Toe W, Wang F, Paiman S, Gao Q, Tan H, Jagadish C
Characterization of Semiconductor Nanowires Using Optical Tweezers
Nano Letters 11, 6(2011) 2375-2381
Characterization of Semiconductor Nanowires Using Optical Tweezers
Nano Letters 11, 6(2011) 2375-2381
Reece P, Toe W, Wang F, Paiman S, Gao Q, Tan H, Jagadish C
Characterization of Semiconductor Nanowires Using Optical Tweezers
Nano Letters 11, 6(2011) 2375-2381
Characterization of Semiconductor Nanowires Using Optical Tweezers
Nano Letters 11, 6(2011) 2375-2381
Wang F, Reece P, Paiman S, Gao Q, Tan H, Jagadish C
Nonlinear Optical Processes in Optically Trapped InP Nanowires
Nano Letters 11, 10(2011) 4149-4153
Nonlinear Optical Processes in Optically Trapped InP Nanowires
Nano Letters 11, 10(2011) 4149-4153
Wang F, Reece P, Paiman S, Gao Q, Tan H, Jagadish C
Nonlinear Optical Processes in Optically Trapped InP Nanowires
Nano Letters 11, 10(2011) 4149-4153
Nonlinear Optical Processes in Optically Trapped InP Nanowires
Nano Letters 11, 10(2011) 4149-4153
Wang Y, Joyce H, Gao Q, Liao X, Tan H, Zou J, Ringer S, Shan Z, Jagadish C
Self-healing of fractured GaAs nanowires
Nano Letters 11, 4(2011) 1546-1549
Self-healing of fractured GaAs nanowires
Nano Letters 11, 4(2011) 1546-1549
Wang Y, Wang L, Joyce H, Gao Q, Liao X, Mai Y, Tan H, Zou J, Ringer S, Gao H, Jagadish C
Super Deformability and Young's Modulus of GaAs Nanowires
Advanced Materials Research 23, 11(2011) 1356-1360
Super Deformability and Young's Modulus of GaAs Nanowires
Advanced Materials Research 23, 11(2011) 1356-1360
Amaratunga V, Premaratne M, Tan H, Hattori H, Jagadish C
Performance assessment of hybrid surface emitting lasers with lateral one-dimensional photonic-crystal mirrors
Journal of the Optical Society of America B 27, 4(2010) 806-817
Performance assessment of hybrid surface emitting lasers with lateral one-dimensional photonic-crystal mirrors
Journal of the Optical Society of America B 27, 4(2010) 806-817
Barik S, Tan H, Wong-Leung J, Jagadish C
Growth and characterization of self-assembled InAs/InP quantum dot structures
Journal of Nanoscience and Nanotechnology 10, 3(2010) 1525-1536
Growth and characterization of self-assembled InAs/InP quantum dot structures
Journal of Nanoscience and Nanotechnology 10, 3(2010) 1525-1536
Charnvanichborikarn S, Villis B, Johnson B, Wong-Leung J, McCallum J, Williams J, Jagadish C
Effect of boron on interstitial-related luminescence centers in silicon
Applied Physics Letters 96, 5(2010) 051906
Effect of boron on interstitial-related luminescence centers in silicon
Applied Physics Letters 96, 5(2010) 051906
Dong H, Chen Z, Sun L, Xie W, Tan H, Lu J, Jagadish C, Shen X
Single-crystalline hexagonal ZnO microtube optical resonators
Journal of Materials Chemistry 20, 26(2010) 5510-5515
Single-crystalline hexagonal ZnO microtube optical resonators
Journal of Materials Chemistry 20, 26(2010) 5510-5515
Du S, Fu L, Tan H, Jagadish C
Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells
Semiconductor Science and Technology 25, 5(2010) 7
Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells
Semiconductor Science and Technology 25, 5(2010) 7
Hakkarainen T, Douheret O, Anand S, Fu L, Tan H, Jagadish C
Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy
Applied Physics Letters 97, 4(2010) 3
Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy
Applied Physics Letters 97, 4(2010) 3
Hall C, Dao L, Koike K, Sasa S, Tan H, Inoue M, Yano M, Jagadish C, Davis J
Using graded barriers to control the optical properties of ZnO/ Zn 0.7 Mg0.3 O quantum wells with an intrinsic internal electric field
Applied Physics Letters 96, 19(2010) 3
Using graded barriers to control the optical properties of ZnO/ Zn 0.7 Mg0.3 O quantum wells with an intrinsic internal electric field
Applied Physics Letters 96, 19(2010) 3
Handapangoda D, Rukhlenko I, Premaratne M, Jagadish C
Optimization of gain-assisted waveguiding in metal-dielectric nanowires
Optics Letters 35, 24(2010) 4190-4192
Optimization of gain-assisted waveguiding in metal-dielectric nanowires
Optics Letters 35, 24(2010) 4190-4192
Jolley G, Fu L, Tan H, Jagadish C
The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Nanoscale 2, 7(2010) 1128-1133
The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Nanoscale 2, 7(2010) 1128-1133
Jolley G, Lu H, Fu L, Tan H, Jagadish C
Electron-hole recombination properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage
Applied Physics Letters 97, 12(2010) 3
Electron-hole recombination properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage
Applied Physics Letters 97, 12(2010) 3
Joyce H, Wong-Leung J, Gao Q, Tan H, Jagadish C
Phase Perfection in Zinc Blende and Wurtzite III-V Nanowires Using Basic Growth Parameters
Nano Letters 10, 3(2010) 908-915
Phase Perfection in Zinc Blende and Wurtzite III-V Nanowires Using Basic Growth Parameters
Nano Letters 10, 3(2010) 908-915
Jung J, Yoon H, Kim Y, Song M, Kim Y, Chen Z, Zou J, Choi D, Kang J, Joyce H, Gao Q, Tan H, Jagadish C
Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers
Nanotechnology 21, 29(2010) 295602-295602
Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers
Nanotechnology 21, 29(2010) 295602-295602
Kang J, Gao Q, Joyce H, Tan H, Jagadish C, Kim Y, Choi D, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Novel growth and properties of GaAs nanowires on Si substrates
Nanotechnology 21, 3(2010) 1-6
Novel growth and properties of GaAs nanowires on Si substrates
Nanotechnology 21, 3(2010) 1-6
Kang J, Gao Q, Joyce H, Tan H, Jagadish C, Kim Y, Choi D, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Novel growth and properties of GaAs nanowires on Si substrates
Nanotechnology 21, 3(2010) 1-6
Novel growth and properties of GaAs nanowires on Si substrates
Nanotechnology 21, 3(2010) 1-6
Kim Y, Jung J, Yoon H, Song M, Bae S, Kim Y, Chen Z, Zou J, Joyce H, Gao Q, Tan H, Jagadish C
CdS/CdSe lateral heterostructure nanobelts by a two-step physical vapor transport method
Nanotechnology 21, 14(2010) 145602-145602
CdS/CdSe lateral heterostructure nanobelts by a two-step physical vapor transport method
Nanotechnology 21, 14(2010) 145602-145602
Lei W, Tan H, Jagadish C
Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer
Applied Physics Letters 96, 21(2010) 3
Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer
Applied Physics Letters 96, 21(2010) 3
Lei W, Tan H, Jagadish C
Emission wavelength extension of mid-infrared InAsSb/InP nanostructures using InGaAsSb sandwich layers
Journal of Physics D: Applied Physics 43, 30(2010) 5
Emission wavelength extension of mid-infrared InAsSb/InP nanostructures using InGaAsSb sandwich layers
Journal of Physics D: Applied Physics 43, 30(2010) 5
Lei W, Tan H, Jagadish C, Ren Q, Lu J, Chen Z
Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition
Applied Physics Letters 97, 22(2010) 3
Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition
Applied Physics Letters 97, 22(2010) 3
Li Q, Tan H, Jagadish C
A new optical front-end compensation technique for suppression of spurious signal in photoreflectance spectroscopy using an antiphase signal
Review of Scientific Instruments 81, 4(2010) 43102-43102
A new optical front-end compensation technique for suppression of spurious signal in photoreflectance spectroscopy using an antiphase signal
Review of Scientific Instruments 81, 4(2010) 43102-43102
Liu D, Hattori H, Fu L, Tan H, Jagadish C
Increasing the coupling efficiency of a microdisk laser to waveguides by using well designed spiral structures
Journal of Applied Physics 107, 4(2010) 043105-1 - 043105-8
Increasing the coupling efficiency of a microdisk laser to waveguides by using well designed spiral structures
Journal of Applied Physics 107, 4(2010) 043105-1 - 043105-8
Liu D, Hattori H, Fu L, Tan H, Jagadish C
The temperature dependence of InGaAs single-wavelength quantum well and multi-wavelength quantum dot square resonator microlasers
Journal of Physics D: Applied Physics 43, 13(2010) 135102/ 1-6
The temperature dependence of InGaAs single-wavelength quantum well and multi-wavelength quantum dot square resonator microlasers
Journal of Physics D: Applied Physics 43, 13(2010) 135102/ 1-6
McKerracher I, Fu L, Tan H, Jagadish C
Thermal expansion coefficients and composition of sputter-deposited silicon oxynitride thin films
Journal of Physics D: Applied Physics 43, 33(2010) 8
Thermal expansion coefficients and composition of sputter-deposited silicon oxynitride thin films
Journal of Physics D: Applied Physics 43, 33(2010) 8
Minovich A, Neshev D, Powell D, Shadrivov I, Lapine M, McKerracher I, Hattori H, Tan H, Jagadish C, Kivshar Y
Tilted response of fishnet metamaterials at near-infrared optical wavelengths
Physical Review B: Condensed Matter and Materials 81, 11(2010) 6
Tilted response of fishnet metamaterials at near-infrared optical wavelengths
Physical Review B: Condensed Matter and Materials 81, 11(2010) 6
Montazeri M, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J, Kang J, Gao Q, Tan H, Jagadish C, Guo Y, Zou J, Pistol M, Pryor C
Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires
Nano Letters 10, 3(2010) 880-886
Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires
Nano Letters 10, 3(2010) 880-886
Montazeri M, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J, Kang J, Gao Q, Tan H, Jagadish C, Guo Y, Zou J, Pistol M, Pryor C
Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires
Nano Letters 10, 3(2010) 880-886
Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires
Nano Letters 10, 3(2010) 880-886
Neshev D, Minovich A, Dieing T, Hattori H, McKerracher I, Tan H, Jagadish C, Kivshar Y
Near-field studies of arrays of chirped subwavelength apertures
Physica Status Solidi: Rapid Research Letters 4, 10(2010) 253-255
Near-field studies of arrays of chirped subwavelength apertures
Physica Status Solidi: Rapid Research Letters 4, 10(2010) 253-255
Paiman S, Gao Q, Joyce H, Kim Y, Tan H, Jagadish C, Zhang X, Guo Y, Zou J
Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
Journal of Physics D: Applied Physics 43, 44(2010) 1-6
Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
Journal of Physics D: Applied Physics 43, 44(2010) 1-6
Paiman S, Gao Q, Joyce H, Kim Y, Tan H, Jagadish C, Zhang X, Guo Y, Zou J
Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
Journal of Physics D: Applied Physics 43, 44(2010) 1-6
Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
Journal of Physics D: Applied Physics 43, 44(2010) 1-6
Perera S, Pemasiri K, Fickenscher M, Jackson H, Smith L, Yarrison-Rice J, Paiman S, Gao Q, Tan H, Jagadish C
Probing valence band structure in wurtzite InP nanowires using excitation spectroscopy
Applied Physics Letters 97, 2(2010)
Probing valence band structure in wurtzite InP nanowires using excitation spectroscopy
Applied Physics Letters 97, 2(2010)
Saha S, Gupta V, Sreenivas K, Tan H, Jagadish C
Third generation biosensing matrix based on Fe-implanted ZnO thin film
Applied Physics Letters 97, 13(2010) 3
Third generation biosensing matrix based on Fe-implanted ZnO thin film
Applied Physics Letters 97, 13(2010) 3
Smith L, Jackson H, Yarrison-Rice J, Jagadish C
Insights into single semiconductor nanowire heterostructures using time-resolved photoluminescence
Semiconductor Science and Technology 25, 2(2010) 1-13
Insights into single semiconductor nanowire heterostructures using time-resolved photoluminescence
Semiconductor Science and Technology 25, 2(2010) 1-13
Zhang P, Song Y, Zhang X, Tan J, Jagadish C, Tan H, Zhang Z
Tunable, high beam quality and narrow linewidth semiconductor disk laser
Optical Engineering 49, 10(2010) 5
Tunable, high beam quality and narrow linewidth semiconductor disk laser
Optical Engineering 49, 10(2010) 5
Amaratunga V, Hattori H, Premaratne M, Tan H, Jagadish C
Directional Optically Pumped Laterally Coupled DFB Lasers With Circular Mirrors
Journal of Lightwave Technology 27, 11(2009) 1425-1433
Directional Optically Pumped Laterally Coupled DFB Lasers With Circular Mirrors
Journal of Lightwave Technology 27, 11(2009) 1425-1433
Davis J, Jagadish C
Ultrafast spectroscopy of ZnO/ZnMgO quantum wells
Laser and Photonics Reviews 3, 1-2(2009) 85-96
Ultrafast spectroscopy of ZnO/ZnMgO quantum wells
Laser and Photonics Reviews 3, 1-2(2009) 85-96
Dong H, Chen Z, Sun L, Lu J, Xie W, Tan H, Jagadish C, Shen X
Whispering gallery modes in indium oxide hexagonal microcavities
Applied Physics Letters 94, 173115(2009) 1-3
Whispering gallery modes in indium oxide hexagonal microcavities
Applied Physics Letters 94, 173115(2009) 1-3
Dong H, Chen Z, Sun L, Zhong L, Ling Y, Yu C, Tan H, Jagadish C, Shen X
Nanosheets-Based Rhombohedral In2O3 3D Hierarchical Microspheres: Synthesis, Growth Mechanism, and Optical Properties
Journal of Physical Chemistry C 113, 24(2009) 10511-10516
Nanosheets-Based Rhombohedral In2O3 3D Hierarchical Microspheres: Synthesis, Growth Mechanism, and Optical Properties
Journal of Physical Chemistry C 113, 24(2009) 10511-10516
Hall C, Dao L, Koike K, Sasa S, Tan H, Inoue M, Yano M, Hannaford P, Jagadish C, Davis J
Recombination dynamics and screening of the internal electric field in ZnO/ZnxMg1-xO multiple quantum wells
Physical Review B: Condensed Matter and Materials 80, 23(2009) 6
Recombination dynamics and screening of the internal electric field in ZnO/ZnxMg1-xO multiple quantum wells
Physical Review B: Condensed Matter and Materials 80, 23(2009) 6
Hattori H, Liu D, Tan H, Jagadish C
Large Square Resonator Laser With Quasi-Single-Mode Operation
IEEE Photonics Technology Letters 21, 6(2009) 359-361
Large Square Resonator Laser With Quasi-Single-Mode Operation
IEEE Photonics Technology Letters 21, 6(2009) 359-361
Jolley G, Fu L, Tan H, Jagadish C
Properties of In0.5Ga0.5As/GaAs/ Al0.2Ga0.8 As quantum-dots-in-a-well infrared photodetectors
Journal of Physics D: Applied Physics 42, 9(2009) 8
Properties of In0.5Ga0.5As/GaAs/ Al0.2Ga0.8 As quantum-dots-in-a-well infrared photodetectors
Journal of Physics D: Applied Physics 42, 9(2009) 8
Jolley G, Xiao B, Fu L, Tan H, Jagadish C
Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Journal of Physics D: Applied Physics 42, 11(2009) 5
Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Journal of Physics D: Applied Physics 42, 11(2009) 5
Joyce H, Gao Q, Tan H, Jagadish C, Kim Y, Fickenscher M, Perera S, Hoang T, Smith L, Jackson H, Yarrison-Rice J, Zhang X, Zou J
Unexpected Benefits of Rapid Growth Rate for III-V Nanowires
Nano Letters 9, 2(2009) 695-701
Unexpected Benefits of Rapid Growth Rate for III-V Nanowires
Nano Letters 9, 2(2009) 695-701
Lei W, Notthoff C, Offer M, Meier C, Lorke A, Jagadish C, Wieck A
Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation
Journal of Materials Research 24, 7(2009) 2179-2184
Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation
Journal of Materials Research 24, 7(2009) 2179-2184
Lei W, Tan H, Jagadish C
Formation and shape control of InAsSb/InP (001) nanostructures
Applied Physics Letters 95, 013108(2009) 1-3
Formation and shape control of InAsSb/InP (001) nanostructures
Applied Physics Letters 95, 013108(2009) 1-3
Lei W, Tan H, Jagadish C
Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures
Applied Physics Letters 95, 14(2009) 143124-143124/3
Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures
Applied Physics Letters 95, 14(2009) 143124-143124/3
Liu D, Hattori H, Fu L, Tan H, Jagadish C
Single-mode operation of a large optically pumped triangular laser with lateral air trenches
Journal of the Optical Society of America B 26, 7(2009) 1417-1422
Single-mode operation of a large optically pumped triangular laser with lateral air trenches
Journal of the Optical Society of America B 26, 7(2009) 1417-1422
Liu D, Hattori H, Fu L, Tan H, Jagadish C
Coupling Analysis of GaAs-Based Microdisk Lasers With Different External Claddings
Journal of Lightwave Technology 27, 22(2009) 5090-5098
Coupling Analysis of GaAs-Based Microdisk Lasers With Different External Claddings
Journal of Lightwave Technology 27, 22(2009) 5090-5098
Maharjan A, Pemasiri K, Kumar P, Wade A, Smith L, Jackson H, Yarrison-Rice J, Kogan A, Paiman S, Gao Q, Tan H, Jagadish C
Room temperature photocurrent spectroscopy of single zincblende and wurtzite InP nanowires
Applied Physics Letters 94, 19(2009) 3
Room temperature photocurrent spectroscopy of single zincblende and wurtzite InP nanowires
Applied Physics Letters 94, 19(2009) 3
Minovich A, Hattori H, McKerracher I, Tan H, Neshev D, Jagadish C, Kivshar Y
Enhanced transmission of light through periodic and chirped lattices of nanoholes
Optics Communications 282(2009) 2023-2027
Enhanced transmission of light through periodic and chirped lattices of nanoholes
Optics Communications 282(2009) 2023-2027
Mokkapati S, Jagadish C
III-V Compound SC for Optoelectronic Devices
Materials Today 12, 4(2009) 22-32
III-V Compound SC for Optoelectronic Devices
Materials Today 12, 4(2009) 22-32
Paiman S, Gao Q, Tan H, Jagadish C, Pemasiri K, Montazeri M, Jackson H, Smith L, Yarrison-Rice J, Zhang X, Zou J
The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires
Nanotechnology 20, 22(2009) 7
The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires
Nanotechnology 20, 22(2009) 7
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Formation of Hierarchical InAs Nanoring/GaAs Nanowire Heterostructures
Angewandte Chemie International Edition 48, 4(2009) 780-783
Formation of Hierarchical InAs Nanoring/GaAs Nanowire Heterostructures
Angewandte Chemie International Edition 48, 4(2009) 780-783
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
Journal of Applied Physics 105, 073503(2009) 1-4
Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
Journal of Applied Physics 105, 073503(2009) 1-4
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Nanoscale Research Letters 4, 8(2009) 846-849
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Nanoscale Research Letters 4, 8(2009) 846-849
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures
Angewandte Chemie International Edition 48, 4(2009) 780-783
Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures
Angewandte Chemie International Edition 48, 4(2009) 780-783
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
Journal of Applied Physics 105, 073503(2009) 1-4
Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
Journal of Applied Physics 105, 073503(2009) 1-4
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Evolution of wurtzite structured GaAs shells around InAs nanowire cores
Nanoscale Research Letters 4, 8(2009) 846-849
Evolution of wurtzite structured GaAs shells around InAs nanowire cores
Nanoscale Research Letters 4, 8(2009) 846-849
Parkinson P, Joyce H, Gao Q, Tan H, Zhang X, Jagadish C, Herz L, Johnston M
Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy
Nano Letters 9, 9(2009) 3349-3353
Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy
Nano Letters 9, 9(2009) 3349-3353
Parkinson P, Joyce H, Gao Q, Tan H, Zhang X, Jagadish C, Herz L, Johnston M
Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy
Nano Letters 9, 9(2009) 3349-3353
Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy
Nano Letters 9, 9(2009) 3349-3353
Pemasiri K, Montazeri M, Gass R, Smith L, Jackson H, Yarrison-Rice J, Paiman S, Gao Q, Tan H, Jagadish C, Zhang X, Zou J
Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures
Nano Letters 9, 2(2009) 648-654
Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures
Nano Letters 9, 2(2009) 648-654
Reece P, Paiman S, Abdul-Nabi O, Gao Q, Gal M, Tan H, Jagadish C
Combined optical trapping and microphotoluminescence of single InP nanowires
Applied Physics Letters 95, 10(2009) 101109-1 - 101109-3
Combined optical trapping and microphotoluminescence of single InP nanowires
Applied Physics Letters 95, 10(2009) 101109-1 - 101109-3
Rukhlenko I, Handapangoda D, Premaratne M, Fedorov A, Baranov A, Jagadish C
Spontaneous emission of guided polaritons by quantum dot coupled to metallic nanowire: Beyond the dipole approximation
Optics Express 17, 20(2009) 17570-1
Spontaneous emission of guided polaritons by quantum dot coupled to metallic nanowire: Beyond the dipole approximation
Optics Express 17, 20(2009) 17570-1
Wen X, Davis J, Dao L, Hannaford P, Coleman V, Tan H, Jagadish C, Koike K, Sasa S, Inoue M, Yano M
Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing
Journal of Luminescence 129, 2(2009) 153-157
Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing
Journal of Luminescence 129, 2(2009) 153-157
Xu H, Guo Y, Wang Y, Zou J, Kang J, Gao Q, Tan H, Jagadish C
Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si
Journal of Applied Physics 106, 083514(2009) 1-4
Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si
Journal of Applied Physics 106, 083514(2009) 1-4
Xu H, Guo Y, Wang Y, Zou J, Kang J, Gao Q, Tan H, Jagadish C
Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si
Journal of Applied Physics 106, 083514(2009) 1-4
Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si
Journal of Applied Physics 106, 083514(2009) 1-4
Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Evolution of Epitaxial InAs Nanowires on GaAs (111)B
Small 5, 3(2009) 366-369
Evolution of Epitaxial InAs Nanowires on GaAs (111)B
Small 5, 3(2009) 366-369
Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Evolution of epitaxial InAs nanowires on GaAs (111)B
Small 5, 3(2009) 366-369
Evolution of epitaxial InAs nanowires on GaAs (111)B
Small 5, 3(2009) 366-369
Amaratunga V, Hattori H, Premaratne M, Tan H, Jagadish C
Photonic crystal phase detectors
Journal of the Optical Society of America B 25, 9(2008) 1532-1536
Photonic crystal phase detectors
Journal of the Optical Society of America B 25, 9(2008) 1532-1536
Buda M, Iordache G, Mokkapati S, Tan H, Jagadish C, Stancu V, Botila T
Capacitance spectroscopy study of InGaAs/GaAs quantum dot structures
Journal of Optoelectronics and Advanced Materials 10, 2(2008) 323-326
Capacitance spectroscopy study of InGaAs/GaAs quantum dot structures
Journal of Optoelectronics and Advanced Materials 10, 2(2008) 323-326
Buda M, Iordache G, Mokkapati S, Fu L, Jolley G, Tan H, Jagadish C, Buda M
Analytical expression for the quantum dot contribution to the quasi static capacitance for conduction band characterization
Journal of Applied Physics 104, 2(2008) 1-11
Analytical expression for the quantum dot contribution to the quasi static capacitance for conduction band characterization
Journal of Applied Physics 104, 2(2008) 1-11
Burgess T, Jagadish C
Nanoscale Materials: How Small is Big
Proceedings of the IEEE 96, 12(2008) 1895-1897
Nanoscale Materials: How Small is Big
Proceedings of the IEEE 96, 12(2008) 1895-1897
Castro-Camus E, Fu L, Lloyd-Hughes J, Tan H, Jagadish C, Johnston M
Photoconductive response correction for detectors of terahertz radiation
Journal of Applied Physics 104, 053113(2008) 1-7
Photoconductive response correction for detectors of terahertz radiation
Journal of Applied Physics 104, 053113(2008) 1-7
Davis J, Dao L, Wen X, Ticknor C, Hannaford P, Coleman V, Tan H, Jagadish C, Koike K, Sasa S, Inoue M, Yano M
Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing
Nanotechnology 19, 5(2008) 1-4
Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing
Nanotechnology 19, 5(2008) 1-4
Fu L, Li Q, Kuffner P, Jolley G, Gareso P, Tan H, Jagadish C
Two-color InGaAs/GaAs quantum dot infrared photodetectors by selective area interdiffusion
Applied Physics Letters 93, 1(2008) 1-3
Two-color InGaAs/GaAs quantum dot infrared photodetectors by selective area interdiffusion
Applied Physics Letters 93, 1(2008) 1-3
Hattori H, Tan H, Jagadish C
Optically Pumped In-Plane Photonic Crystal Microcavity Laser Arrays Coupled to Waveguides
Journal of Lightwave Technology 26, 11(2008) 1374-1380
Optically Pumped In-Plane Photonic Crystal Microcavity Laser Arrays Coupled to Waveguides
Journal of Lightwave Technology 26, 11(2008) 1374-1380
Jolley G, Fu L, Tan H, Jagadish C
Effects of well thickness on the spectral properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Applied Physics Letters 92, 19(2008) 1-3
Effects of well thickness on the spectral properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Applied Physics Letters 92, 19(2008) 1-3
Jolley G, Fu L, Tan H, Jagadish C
Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors
Journal of Physics D: Applied Physics 41, 215101(2008) 1-7
Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors
Journal of Physics D: Applied Physics 41, 215101(2008) 1-7
Joyce H, Gao Q, Tan H, Jagadish C, Kim Y, Fickenscher M, Perera S, Hoang T, Smith L, Jackson H, Yarrison-Rice J, Zhang X, Zou J
High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization
Advanced Functional Materials 18(2008) 3794-3800
High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization
Advanced Functional Materials 18(2008) 3794-3800
Lei W, Jagadish C
Lasers and photodetectors for mid-infrared 2-3 um applications
Journal of Applied Physics 104, 9(2008) 1-11
Lasers and photodetectors for mid-infrared 2-3 um applications
Journal of Applied Physics 104, 9(2008) 1-11
Li Q, Barik S, Tan H, Jagadish C
Effect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots
Journal of Physics D: Applied Physics 41, 205107(2008) 1-6
Effect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots
Journal of Physics D: Applied Physics 41, 205107(2008) 1-6
Mokkapati S, Tan H, Jagadish C, Buda M
Self-sustained output power pulsations in InGaAs quantum dot ridge-waveguide lasers
Applied Physics Letters 92, 021104(2008) 1-3
Self-sustained output power pulsations in InGaAs quantum dot ridge-waveguide lasers
Applied Physics Letters 92, 021104(2008) 1-3
Mokkapati S, Wong-Leung J, Tan H, Jagadish C, McBean K, Phillips M
Tuning the bandgap of InAs quantum dots by selective-area MOCVD
Journal of Physics D: Applied Physics 41, 085104(2008) 1-4
Tuning the bandgap of InAs quantum dots by selective-area MOCVD
Journal of Physics D: Applied Physics 41, 085104(2008) 1-4
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
Applied Physics Letters 93, 201908(2008) 1-3
Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
Applied Physics Letters 93, 201908(2008) 1-3
Paladugu M, Zou J, Guo Y, Zhang X, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
Applied Physics Letters 93, 101911(2008) 1-3
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
Applied Physics Letters 93, 101911(2008) 1-3
Paladugu M, Zou J, Guo Y, Zhang X, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
Applied Physics Letters 93, 101911(2008) 1-3
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
Applied Physics Letters 93, 101911(2008) 1-3
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
Applied Physics Letters 93, 201908(2008) 1-3
Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
Applied Physics Letters 93, 201908(2008) 1-3
Perera S, Fickenscher M, Jackson H, Smith L, Yarrison-Rice J, Joyce H, Gao Q, Tan H, Jagadish C, Zhang X, Zou J
Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
Applied Physics Letters 93, 5(2008) 1-3
Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
Applied Physics Letters 93, 5(2008) 1-3
Song M, Jung J, Kim Y, Wang Y, Zou J, Joyce H, Gao Q, Tan H, Jagadish C
Vertically standing Ge nanowires on GaAs(110) substrates
Nanotechnology 19, 125602(2008) 1-6
Vertically standing Ge nanowires on GaAs(110) substrates
Nanotechnology 19, 125602(2008) 1-6
Wen X, Dao L, Hannaford P, Mokkapati S, Tan H, Jagadish C
Electron dynamics in modulation p-doped InGaAs/GaAs quantum dots
European Physical Journal B 62(2008) 65-70
Electron dynamics in modulation p-doped InGaAs/GaAs quantum dots
European Physical Journal B 62(2008) 65-70
Wong-Leung J, Janson M, Kuznetsov A, Svensson B, Linnarsson M, Hallen A, Jagadish C, Cockayne D
Ion implantation in 4H-SiC
Nuclear Instruments and Methods in Physics Research: Section B 266(2008) 1367-1372
Ion implantation in 4H-SiC
Nuclear Instruments and Methods in Physics Research: Section B 266(2008) 1367-1372
Zubiaga A, Tuomisto F, Coleman V, Jagadish C
Clusterization of vacancy defects in ZnO irradiated with 2 MeV O+
Applied Surface Science 255(2008) 234-236
Clusterization of vacancy defects in ZnO irradiated with 2 MeV O+
Applied Surface Science 255(2008) 234-236
Zubiaga A, Tuomisto F, Coleman V, Tan H, Jagadish C, Koike K, Sasa S, Inoue M, Yano M
Mechanisms of electrical isolation in O+-irradiated ZnO
Physical Review B: Condensed Matter and Materials 78, 3(2008) 1-5
Mechanisms of electrical isolation in O+-irradiated ZnO
Physical Review B: Condensed Matter and Materials 78, 3(2008) 1-5
Ashrafi A, Jagadish C
Review of zincblende ZnO: Stability of metastable ZnO phases
Journal of Applied Physics 102(2007) 071101 1-12
Review of zincblende ZnO: Stability of metastable ZnO phases
Journal of Applied Physics 102(2007) 071101 1-12
Barik S, Fu L, Tan H, Jagadish C
Impurity-free disordering of InAs/InP quantum dots
Applied Physics Letters 90(2007) 243114 1-3
Impurity-free disordering of InAs/InP quantum dots
Applied Physics Letters 90(2007) 243114 1-3
Barik S, Tan H, Jagadish C
Comparison of proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots
Nanotechnology 18(2007) 175305 1-4
Comparison of proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots
Nanotechnology 18(2007) 175305 1-4
Barik S, Tan H, Jagadish C
High temperature rapid thermal annealing of phosphorous ion implanted InAs/InP quantum dots
Applied Physics Letters 90(2007) 093106 1-3
High temperature rapid thermal annealing of phosphorous ion implanted InAs/InP quantum dots
Applied Physics Letters 90(2007) 093106 1-3
Castro-Camus E, Lloyd-Hughes J, Fu L, Tan H, Jagadish C, Johnston M
An ion-implanted InP receiver for polarization resolved terahertz spectroscopy
Optics Express 15, 11(2007) 1-11
An ion-implanted InP receiver for polarization resolved terahertz spectroscopy
Optics Express 15, 11(2007) 1-11
Fu L, McKerracher I, Tan H, Jagadish C, Vukmirovic N, Harrison P
Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition
Applied Physics Letters 91(2007) 073515 1-3
Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition
Applied Physics Letters 91(2007) 073515 1-3
Gareso P, Buda M, Fu L, Tan H, Jagadish C
Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures
Semiconductor Science and Technology 22(2007) 988-992
Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures
Semiconductor Science and Technology 22(2007) 988-992
Hattori H, McKerracher I, Tan H, Jagadish C, De La Rue R
In-plane coupling of light from InP-based photonic crystal band-edge lasers into single-mode waveguides
IEEE Journal of Quantum Electronics 43, 4(2007) 279-286
In-plane coupling of light from InP-based photonic crystal band-edge lasers into single-mode waveguides
IEEE Journal of Quantum Electronics 43, 4(2007) 279-286
Hattori H, Tan H, Jagadish C
Analysis of optically pumped compact laterally coupled distributed feedback lasers with three symmetric defect regions
Journal of Applied Physics 102(2007) 083109 1-8
Analysis of optically pumped compact laterally coupled distributed feedback lasers with three symmetric defect regions
Journal of Applied Physics 102(2007) 083109 1-8
Hoang T, Titova L, Yarrison-Rice J, Jackson H, Govorov A, Kim Y, Joyce H, Tan H, Jagadish C, Smith L
Resonant Excitation and Imaging of Nonequilibrium Exciton Spins in Single Core-Shell GaAs-AlGaAs Nanowires
Nano Letters 7, 3(2007) 588-595
Resonant Excitation and Imaging of Nonequilibrium Exciton Spins in Single Core-Shell GaAs-AlGaAs Nanowires
Nano Letters 7, 3(2007) 588-595
Jolley G, Fu L, Tan H, Jagadish C
Influence of quantum well and barrier composition on the spectral behavior in InGasAs quantum dots-in-a-well infrared photodetectors
Applied Physics Letters 91(2007) 173508 1-3
Influence of quantum well and barrier composition on the spectral behavior in InGasAs quantum dots-in-a-well infrared photodetectors
Applied Physics Letters 91(2007) 173508 1-3
Joyce H, Gao Q, Tan H, Jagadish C, Kim Y, Zhang X, Guo Y, Zou J
Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process
Nano Letters 7, 4(2007) 921-926
Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process
Nano Letters 7, 4(2007) 921-926
Kim Y, Song M, Kim Y, Jung J, Gao Q, Tan H, Jagadish C
Epitaxial Germanium Nanowires on GaAs Grown by Chemical Vapor Deposition
Journal of the Korean Physical Society 51, 1(2007) 120-124
Epitaxial Germanium Nanowires on GaAs Grown by Chemical Vapor Deposition
Journal of the Korean Physical Society 51, 1(2007) 120-124
Matsik S, Rinzan M, Perera A, Tan H, Jagadish C, Liu H
Effects of a p-n junction on heterojunction far infrared detectors
Infrared Physics and Technology 50(2007) 274-278
Effects of a p-n junction on heterojunction far infrared detectors
Infrared Physics and Technology 50(2007) 274-278
Mishra A, Titova L, Hoang T, Jackson H, Smith L, Yarrison-Rice J, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
Applied Physics Letters 91(2007) 263104 1-3
Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
Applied Physics Letters 91(2007) 263104 1-3
Mokkapati S, Du S, Buda M, Fu L, Tan H, Jagadish C
Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
Nanoscale Research Letters 2(2007) 550-553
Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
Nanoscale Research Letters 2(2007) 550-553
Mokkapati S, Tan H, Jagadish C
Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy
Applied Physics Letters 90(2007) 171104 1-3
Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy
Applied Physics Letters 90(2007) 171104 1-3
Paladugu M, Zou J, Auchterlonie G, Guo Y, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Evolution of InAs branches in InAs/GaAs nanowire heterostructures
Applied Physics Letters 91, 13(2007) 133115 1-3
Evolution of InAs branches in InAs/GaAs nanowire heterostructures
Applied Physics Letters 91, 13(2007) 133115 1-3
Paladugu M, Zou J, Auchterlonie G, Guo Y, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Evolution of InAs branches in InAs/GaAs nanowire heterostructures
Applied Physics Letters 91, 13(2007) 133115 1-3
Evolution of InAs branches in InAs/GaAs nanowire heterostructures
Applied Physics Letters 91, 13(2007) 133115 1-3
Paladugu M, Zou J, Guo Y, Auchterlonie G, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
Small 3, 11(2007) 1873-1877
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
Small 3, 11(2007) 1873-1877
Paladugu M, Zou J, Guo Y, Auchterlonie G, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
Small 3, 11(2007) 1873-1877
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
Small 3, 11(2007) 1873-1877
Parkinson P, Lloyd-Hughes J, Gao Q, Tan H, Jagadish C, Johnston M, Herz L
Transient Terahertz Conductivity of GaAs Nanowires
Nano Letters 7, 7(2007) 2162-2165
Transient Terahertz Conductivity of GaAs Nanowires
Nano Letters 7, 7(2007) 2162-2165
Parkinson P, Lloyd-Hughes J, Gao Q, Tan H, Jagadish C, Johnston M, Herz L
Transient Terahertz Conductivity of GaAs Nanowires
Nano Letters 7, 7(2007) 2162-2165
Transient Terahertz Conductivity of GaAs Nanowires
Nano Letters 7, 7(2007) 2162-2165
Sathish N, Dhamodaran S, Pathak A, Krishna G, Khan S, Avasthi D, Pandey A, Muralidharan R, Jagadish C, Li G
HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers
Nuclear Instruments and Methods in Physics Research: Section B 256(2007) 281-287
HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers
Nuclear Instruments and Methods in Physics Research: Section B 256(2007) 281-287
Titova L, Hoang T, Yarrison-Rice J, Jackson H, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C, Zhang X, Zou J, Smith L
Dynamics of Strongly Degenerate Electron-Hole Plasmas and Excitons in Single InP Nanowires
Nano Letters 7, 11(2007) 3383-3387
Dynamics of Strongly Degenerate Electron-Hole Plasmas and Excitons in Single InP Nanowires
Nano Letters 7, 11(2007) 3383-3387
Wen X, Dao L, Davis J, Hannaford P, Mokkapati S, Tan H, Jagadish C
Carrier dynamics in p-type InGaAs/GaAs quantum dots
Journal of Materials Science: Materials in Electronics 18(2007) S363-S365
Carrier dynamics in p-type InGaAs/GaAs quantum dots
Journal of Materials Science: Materials in Electronics 18(2007) S363-S365
Wen X, Dao L, Hannaford P, Mokkapati S, Tan H, Jagadish C
The state filling effect in p-doped InGaAs/GaAs quantum dots
Journal of Physics: Condensed Matter 19(2007) 386213/ 1-10
The state filling effect in p-doped InGaAs/GaAs quantum dots
Journal of Physics: Condensed Matter 19(2007) 386213/ 1-10
Wen X, Davis J, Dao L, Hannaford P, Coleman V, Tan H, Jagadish C, Koike K, Sasa S, Inoue M, Yano M
Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells
Applied Physics Letters 90(2007) 221914/ 1-3
Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells
Applied Physics Letters 90(2007) 221914/ 1-3
Wen X, Davis J, McDonald D, Dao L, Hannaford P, Coleman V, Tan H, Jagadish C, Koike K, Sasa S, Inoue M, Yano M
Ultrafast dynamics in ZnO/ZnMgO multiple quantum wells
Nanotechnology 18(2007) 315403 1-5
Ultrafast dynamics in ZnO/ZnMgO multiple quantum wells
Nanotechnology 18(2007) 315403 1-5
Zou J, Paladugu M, Wang H, Auchterlonie G, Guo Y, Kim Y, Gao Q, Joyce H, Tan H, Jagadish C
Growth mechanism of truncated triangular III-V nanowires
Small 3, 3(2007) 389-393
Growth mechanism of truncated triangular III-V nanowires
Small 3, 3(2007) 389-393
Zou J, Paladugu M, Wang H, Auchterlonie G, Guo Y, Kim Y, Gao Q, Joyce H, Tan H, Jagadish C
Growth Mechanism of Truncated Triangular III-V Nanowires
Small 3, 3(2007) 389-393
Growth Mechanism of Truncated Triangular III-V Nanowires
Small 3, 3(2007) 389-393
ARIES T, Kim Y, Joyce H, Jagadish C
Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
AIP Conference Proceedings 893(2007) 869-870
Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
AIP Conference Proceedings 893(2007) 869-870
Guo Y, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process
Nano Letters 7, 4(2007) 921-926
Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process
Nano Letters 7, 4(2007) 921-926
Barik S, Tan H, Jagadish C
Proton Implantation-induced Intermixing of InAs/InP Quantum Dots
Applied Physics Letters 88, 22(2006) 223101-1-3
Proton Implantation-induced Intermixing of InAs/InP Quantum Dots
Applied Physics Letters 88, 22(2006) 223101-1-3
Barik S, Tan H, Jagadish C
Comparison of InAs Quantum Dots Grown on GaInAsP and InP
Nanotechnology 17(2006) 1867-1870
Comparison of InAs Quantum Dots Grown on GaInAsP and InP
Nanotechnology 17(2006) 1867-1870
Barik S, Tan H, Jagadish C, Vukmirovic N, Harrison P
Selective Wavelength Tuning of Self-assembled InAs Quantum Dots grown on InP
Applied Physics Letters 88, 19(2006) 193112-1-3
Selective Wavelength Tuning of Self-assembled InAs Quantum Dots grown on InP
Applied Physics Letters 88, 19(2006) 193112-1-3
Coleman V, Bradby J, Jagadish C, Phillips M
Observation of Enhanced Defect Emission and Excitonic Quenching from spherically Indented ZnO
Applied Physics Letters 89, 8(2006) 082102-1-3
Observation of Enhanced Defect Emission and Excitonic Quenching from spherically Indented ZnO
Applied Physics Letters 89, 8(2006) 082102-1-3
Coleman V, Buda M, Tan H, Jagadish C, Phillips M, Koike K, Sasa S, Inoue M, Yano M
Observation of Blue Shifts in ZnO/ZnMgO Multiple Quantum Well Structures by Ion-implantation Induced Intermixing
Semiconductor Science and Technology 21(2006) L25-L28
Observation of Blue Shifts in ZnO/ZnMgO Multiple Quantum Well Structures by Ion-implantation Induced Intermixing
Semiconductor Science and Technology 21(2006) L25-L28
Davis J, Dao L, Wen X, Hannaford P, Coleman V, Tan H, Jagadish C, Koike K, Sasa S, Inoue M, Yano M
Observation of Coherent Biexcitons in ZnO/ZnMgO Multiple Quantum Wells at Room Temperature
Applied Physics Letters 89, 18(2006) 182109-1-3
Observation of Coherent Biexcitons in ZnO/ZnMgO Multiple Quantum Wells at Room Temperature
Applied Physics Letters 89, 18(2006) 182109-1-3
Drozdowicz-Tomsia K, Goldys E, Fu L, Jagadish C
Doping Effect on Dark Currents in In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-organic Chemical Vapor Deposition
Applied Physics Letters 89, 11(2006) 113510-1-3
Doping Effect on Dark Currents in In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-organic Chemical Vapor Deposition
Applied Physics Letters 89, 11(2006) 113510-1-3
Fu L, Tan H, McKerracher I, Wong-Leung J, Jagadish C, Vukmirovic N, Harrison P
Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors
Journal of Applied Physics 99, 11(2006) 114517-1-8
Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors
Journal of Applied Physics 99, 11(2006) 114517-1-8
Gareso P, Buda M, Fu L, Tan H, Jagadish C, Dao L, Wen X, Hannaford P
Proton Irradiation-induced Intermixing in InxGa1-xAs/InP Quantum Wells - the Effect of In Composition
Semiconductor Science and Technology 21(2006) 1441-1446
Proton Irradiation-induced Intermixing in InxGa1-xAs/InP Quantum Wells - the Effect of In Composition
Semiconductor Science and Technology 21(2006) 1441-1446
Gareso P, Buda M, Petravic M, Tan H, Jagadish C
Effect of Rapid Thermal Annealing on the Atomic Intermixing of Zn- and C-Doped InGaAs/AlGaAs Quantum Well Laser Structures
Journal of the Electrochemical Society 153, 9(2006) G879-G882
Effect of Rapid Thermal Annealing on the Atomic Intermixing of Zn- and C-Doped InGaAs/AlGaAs Quantum Well Laser Structures
Journal of the Electrochemical Society 153, 9(2006) G879-G882
Gareso P, Buda M, Tan H, Jagadish C, Ilyas S, Gal M
On Quantifying the Group-V to Group-III Interdiffusion Rates in InxGa1-xAs/InP Quantum Wells
Semiconductor Science and Technology 21(2006) 829-832
On Quantifying the Group-V to Group-III Interdiffusion Rates in InxGa1-xAs/InP Quantum Wells
Semiconductor Science and Technology 21(2006) 829-832
Guo Y, Zou J, Paladugu M, Wang H, Gao Q, Tan H, Jagadish C
Structural characteristics of GaSb/GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition
Applied Physics Letters 89, 23(2006) 231917-1-3
Structural characteristics of GaSb/GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition
Applied Physics Letters 89, 23(2006) 231917-1-3
Guo Y, Zou J, Paladugu M, Wang H, Gao Q, Tan H, Jagadish C
Structural characteristics of GaSb/GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition
Applied Physics Letters 89, 23(2006) 231917-1-3
Structural characteristics of GaSb/GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition
Applied Physics Letters 89, 23(2006) 231917-1-3
Huang S, Chen Z, Bai L, Chen X, Tan H, Fu L, Fraser M, Jagadish C
Micro-photoluminescence Confocal Mapping of Single V-grooved GaAs Quantum Wire
Chinese Physics Letters 23, 12(2006) 3341-3344
Micro-photoluminescence Confocal Mapping of Single V-grooved GaAs Quantum Wire
Chinese Physics Letters 23, 12(2006) 3341-3344
Huang S, Chen Z, Wang F, Shen S, Tan H, Fu L, Fraser M, Jagadish C
Carrier Transfer and Magneto-transport in Single Modulation-doped V-grooved Quantum Wire modified by Ion Implantation
Journal of Luminescence 119-120(2006) 198-203
Carrier Transfer and Magneto-transport in Single Modulation-doped V-grooved Quantum Wire modified by Ion Implantation
Journal of Luminescence 119-120(2006) 198-203
Kim Y, Joyce H, Gao Q, Tan H, Jagadish C, Paladugu M, Zou J, Suvorova A
Influence of Nanowire Density on the Shape and Optical Properties of Ternary InGaAs Nanowires
Nano Letters 6, 4(2006) 599-604
Influence of Nanowire Density on the Shape and Optical Properties of Ternary InGaAs Nanowires
Nano Letters 6, 4(2006) 599-604
Laird J, Jagadish C, Jamieson D, Legge G
Scanning Ion Deep Level Transient Spectroscopy: II. Ion Irradiated Au-Si Schottky Junctions
Journal of Physics D: Applied Physics 39(2006) 1352-1362
Scanning Ion Deep Level Transient Spectroscopy: II. Ion Irradiated Au-Si Schottky Junctions
Journal of Physics D: Applied Physics 39(2006) 1352-1362
Laird J, Jagadish C, Jamieson D, Legge G
Scanning Ion Deep Level Transient Spectroscopy: I. Theory
Journal of Physics D: Applied Physics 39(2006) 1342-1351
Scanning Ion Deep Level Transient Spectroscopy: I. Theory
Journal of Physics D: Applied Physics 39(2006) 1342-1351
Lloyd-Hughes J, Merchant S, Fu L, Tan H, Jagadish C, Castro-Camus E, Johnston M
Influence of Surface Passivation on Ultrafast Carrier Dynamics and Terahertz Radiation Generation in GaAs
Applied Physics Letters 89, 23(2006) 232201-1-3
Influence of Surface Passivation on Ultrafast Carrier Dynamics and Terahertz Radiation Generation in GaAs
Applied Physics Letters 89, 23(2006) 232201-1-3
Mokkapati S, Buda M, Tan H, Jagadish C
Effect of Auger Recombination on the Performance of p-doped Quantum Dot Lasers
Applied Physics Letters 88(2006) 161121-1-3
Effect of Auger Recombination on the Performance of p-doped Quantum Dot Lasers
Applied Physics Letters 88(2006) 161121-1-3
Mokkapati S, Tan H, Jagadish C
Integration of an InGaAs Quantum-Dot Laser with a Low-Loss Passive Waveguide using Selective-Area Epitaxy
IEEE Photonics Technology Letters 18, 15(2006) 1648-1650
Integration of an InGaAs Quantum-Dot Laser with a Low-Loss Passive Waveguide using Selective-Area Epitaxy
IEEE Photonics Technology Letters 18, 15(2006) 1648-1650
Petravic M, Deenapanray P, Coleman V, Jagadish C, Kim K, Kim B, Koike K, Sasa S, Inoue M, Yano M
Chemical States of Nitrogen in ZnO Studied by near-edge X-ray Absorption Fine Structure and Core-level Photoemission Spectroscopies
Surface Science 600(2006) L81-L85
Chemical States of Nitrogen in ZnO Studied by near-edge X-ray Absorption Fine Structure and Core-level Photoemission Spectroscopies
Surface Science 600(2006) L81-L85
Siegert J, Marcinkevicius S, Fu L, Jagadish C
Recombination Properties of Si-doped InGaAs/GaAs Quantum Dots
Nanotechnology 17(2006) 5373-5377
Recombination Properties of Si-doped InGaAs/GaAs Quantum Dots
Nanotechnology 17(2006) 5373-5377
Sears K, Buda M, Tan H, Jagadish C
Modeling and Characterization of InAs/GaAs Quantum Dot Lasers grown using Metal Organic Chemical Vapor Deposition
Journal of Applied Physics 101, 1(2006) 013112-1-9
Modeling and Characterization of InAs/GaAs Quantum Dot Lasers grown using Metal Organic Chemical Vapor Deposition
Journal of Applied Physics 101, 1(2006) 013112-1-9
Sears K, Tan H, Wong-Leung J, Jagadish C
The Role of Arsine in the Self-assembled Growth of InAs/GaAs Quantum Dots by Metal Organic Chemical Vapor Deposition
Journal of Applied Physics 99, 4(2006) 044908-1-5
The Role of Arsine in the Self-assembled Growth of InAs/GaAs Quantum Dots by Metal Organic Chemical Vapor Deposition
Journal of Applied Physics 99, 4(2006) 044908-1-5
Sears K, Wong-Leung J, Tan H, Jagadish C
A Transmission Electron Microscopy Study of Defects formed through the Capping Layer of Self-assembled InAs/GaAs Quantum Dot Samples
Journal of Applied Physics 99, 11(2006) 113503-1-8
A Transmission Electron Microscopy Study of Defects formed through the Capping Layer of Self-assembled InAs/GaAs Quantum Dot Samples
Journal of Applied Physics 99, 11(2006) 113503-1-8
Tan H, Sears K, Mokkapati S, Fu L, Kim Y, McGowan P, Buda M, Jagadish C
Quantum Dots and Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 12, 6(2006) 1242-1254
Quantum Dots and Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 12, 6(2006) 1242-1254
Titova L, Hoang T, Jackson H, Smith L, Yarrison-Rice J, Kim Y, Joyce H, Tan H, Jagadish C
Temperature Dependence of Photoluminescence from Single Core-shell GaAs-AlGaAs Nanowires
Applied Physics Letters 89, 17(2006) 173126-1-3
Temperature Dependence of Photoluminescence from Single Core-shell GaAs-AlGaAs Nanowires
Applied Physics Letters 89, 17(2006) 173126-1-3
Buda M, Jagadish C
Computation of the Modal Reflectivity for a Partially Etched Mirror: Application for Integration of a Laser Diode and a Waveguide
Applied Optics 44, 6(2005) 1039-1050
Computation of the Modal Reflectivity for a Partially Etched Mirror: Application for Integration of a Laser Diode and a Waveguide
Applied Optics 44, 6(2005) 1039-1050
Castro-Camus E, Lloyd-Hughes J, Johnston M, Fraser M, Tan H, Jagadish C
Polarization-Sensitive Terahertz Detection by Multicontact Photoconductive Receivers
Applied Physics Letters 86, 25(2005) 254102-1-3
Polarization-Sensitive Terahertz Detection by Multicontact Photoconductive Receivers
Applied Physics Letters 86, 25(2005) 254102-1-3
Coleman V, Bradby J, Jagadish C, Munroe P, Heo Y, Pearton S, Norton D, Inoue M, Yano M
Mechanical Properties of ZnO Epitaxial Layers Grown on a- and c-axis Sapphire
Applied Physics Letters 86, 20(2005) 203105-1-3
Mechanical Properties of ZnO Epitaxial Layers Grown on a- and c-axis Sapphire
Applied Physics Letters 86, 20(2005) 203105-1-3
Coleman V, Tan H, Jagadish C, Kucheyev S, Zou J
Thermal Stability of Ion-Implanted ZnO
Applied Physics Letters 87, 23(2005) 231912-1-3
Thermal Stability of Ion-Implanted ZnO
Applied Physics Letters 87, 23(2005) 231912-1-3
Deenapanray P, Petravic M, Jagadish C, Krispin M, Auret F
Electrical Characterization of p-GaAs Epilayers Disordered by Doped Spin-On-Glass
Journal of Applied Physics 97, 3(2005) 033524-1-7
Electrical Characterization of p-GaAs Epilayers Disordered by Doped Spin-On-Glass
Journal of Applied Physics 97, 3(2005) 033524-1-7
Fu L, McGowan P, Sears K, Tan H, Jagadish C
In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition
IEEE Electron Device Letters 26, 9(2005) 628-630
In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition
IEEE Electron Device Letters 26, 9(2005) 628-630
Fu L, McGowan P, Tan H, Jagadish C, Reece P, Gal M
Study of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration
IEE Proceedings - Circuits, Devices and Systems 152, 5(2005) 491-496
Study of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration
IEE Proceedings - Circuits, Devices and Systems 152, 5(2005) 491-496
Gao Q, Buda M, Tan H, Jagadish C
Room-Temperature Preperation of InGaAsN Quantum Dot Lasers Grown by MOCVD
Electrochemical and Solid-State Letters 8, 2(2005) G57-G59
Room-Temperature Preperation of InGaAsN Quantum Dot Lasers Grown by MOCVD
Electrochemical and Solid-State Letters 8, 2(2005) G57-G59
Mokkapati S, McGowan P, Tan H, Jagadish C, McBean K, Phillips M
Controlling the Properties of InGaAs Quantum Dots by Selective-Area Epitaxy
Applied Physics Letters 86, 11(2005) 113102-1-3
Controlling the Properties of InGaAs Quantum Dots by Selective-Area Epitaxy
Applied Physics Letters 86, 11(2005) 113102-1-3
Slotte J, Saarinen K, Janson M, Hallen A, Kuznetsov A, Svensson B, Wong-Leung J, Jagadish C
Fluence, Flux and Implantation Temperature Dependence of Ion-Implantation-Induced Defect Production in 4H-SiC
Journal of Applied Physics 97, 3(2005) 033513-1-7
Fluence, Flux and Implantation Temperature Dependence of Ion-Implantation-Induced Defect Production in 4H-SiC
Journal of Applied Physics 97, 3(2005) 033513-1-7
Sears K, Wong-Leung J, Tan H, Jagadish C
InAs Quantum Dots Grown on InGaAs Buffer Layers by Metal-Organic Chemical Vapor Deposition
Journal of Crystal Growth 281(2005) 290-296
InAs Quantum Dots Grown on InGaAs Buffer Layers by Metal-Organic Chemical Vapor Deposition
Journal of Crystal Growth 281(2005) 290-296
Tan H, McGowan P, Jagadish C
Growth of Highly Strained InGaAs Quantum Wells on GaAs Substrates - Effect of Growth Rate
Journal of Crystal Growth 274(2005) 85-89
Growth of Highly Strained InGaAs Quantum Wells on GaAs Substrates - Effect of Growth Rate
Journal of Crystal Growth 274(2005) 85-89
Williams J, Kucheyev S, Tan H, Wong-Leung J, Jagadish C
Ion Irradiation-induced Disordering of Semiconductors: Defect Structures and Applications
Philosophical Magazine 85, 4-7(2005) 677-687
Ion Irradiation-induced Disordering of Semiconductors: Defect Structures and Applications
Philosophical Magazine 85, 4-7(2005) 677-687
Jagadish C, Fu L
InGaP/GaAs negative differential resistance heterojunction bipolar transistor with a new structure
Journal of Environmental Chemical Engineering 26, 9(2005) 1783-1788
InGaP/GaAs negative differential resistance heterojunction bipolar transistor with a new structure
Journal of Environmental Chemical Engineering 26, 9(2005) 1783-1788
Bogaart E, Haverkort J, Mano T, Notzel R, Wolter J, McGowan P, Tan H, Jagadish C
Picosecond Time-Resolved Bleaching Dynamics of Self-Assembled Quantum Dots
IEEE Transactions on Nanotechnology 3, 3(2004) 348-352
Picosecond Time-Resolved Bleaching Dynamics of Self-Assembled Quantum Dots
IEEE Transactions on Nanotechnology 3, 3(2004) 348-352
Carmody C, Tan H, Jagadish C, Douheret O, Maknys K, Anand S, Zou J, Dao L, Gal M
Structural, Electrical, and Optical Analysis of Ion Implanted Semi-insulating InP
Journal of Applied Physics 95, 2(2004) 477-482
Structural, Electrical, and Optical Analysis of Ion Implanted Semi-insulating InP
Journal of Applied Physics 95, 2(2004) 477-482
Coelho A, Boudinov H, Lippen T, Tan H, Jagadish C
Implant Isolation of AlGaAs Multilayer DBR
Nuclear Instruments and Methods in Physics Research: Section B 218(2004) 381-385
Implant Isolation of AlGaAs Multilayer DBR
Nuclear Instruments and Methods in Physics Research: Section B 218(2004) 381-385
Gao Q, Tan H, Fu L, Jagadish C
Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots
Applied Physics Letters 84, 24(2004) 4950-4952
Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots
Applied Physics Letters 84, 24(2004) 4950-4952
Gao Q, Tan H, Jagadish C, Sun B, Gal M, Ouyang L, Zou J
Metalorganic Chemical Vapor Deposition of GaAsN Epilayers: Microstructures and Optical Properties
Journal of Crystal Growth 264(2004) 92-97
Metalorganic Chemical Vapor Deposition of GaAsN Epilayers: Microstructures and Optical Properties
Journal of Crystal Growth 264(2004) 92-97
Gao Q, Tan H, Jagadish C, Sun B, Gal M, Ouyang L, Zou J
Enhanced Optical Properties of the GaAsN/GaAs Quantum-Well Structure by the Insertion of InAs Monolayers
Applied Physics Letters 84, 14(2004) 2536-2538
Enhanced Optical Properties of the GaAsN/GaAs Quantum-Well Structure by the Insertion of InAs Monolayers
Applied Physics Letters 84, 14(2004) 2536-2538
Gareso P, Buda M, Fu L, Tan H, Jagadish C
Supression of Thermal Atomic Interdiffusion in C-doped InGaAs/AIGaAs Quantum Well Laser Structures using TiO2 Dielectric Layers
Applied Physics Letters 85, 23(2004) 5583-5585
Supression of Thermal Atomic Interdiffusion in C-doped InGaAs/AIGaAs Quantum Well Laser Structures using TiO2 Dielectric Layers
Applied Physics Letters 85, 23(2004) 5583-5585
Kucheyev S, Timmers H, Zou J, Williams J, Jagadish C, Li G
Lattice Damage Produced in GaN by Swift Heavy Ions
Journal of Applied Physics 95, 10(2004) 5360-5365
Lattice Damage Produced in GaN by Swift Heavy Ions
Journal of Applied Physics 95, 10(2004) 5360-5365
Kucheyev S, Williams J, Jagadish C
Ion-Beam-Defect Processes in Group-III Nitrides and ZnO
Vacuum 73(2004) 93-104
Ion-Beam-Defect Processes in Group-III Nitrides and ZnO
Vacuum 73(2004) 93-104
Kucheyev S, Williams J, Zou J, Jagadish C
Dynamic Annealing in III-Nitrides Under Ion Bombardment
Journal of Applied Physics 95, 6(2004) 3048-3054
Dynamic Annealing in III-Nitrides Under Ion Bombardment
Journal of Applied Physics 95, 6(2004) 3048-3054
McGowan P, Buda M, Tan H, Jagadish C
Characteristics of MOCVD-Grown Thin p-Clad InGaAs Quantum-Dot Lasers
IEEE Photonics Technology Letters 16, 12(2004) 2589-2591
Characteristics of MOCVD-Grown Thin p-Clad InGaAs Quantum-Dot Lasers
IEEE Photonics Technology Letters 16, 12(2004) 2589-2591
McGowan P, Buda M, Tan H, Jagadish C
Investigation of the Blueshift in Electroluminescence Spectra from MOCVD Grown InGaAs Quantum Dots
IEEE Journal of Quantum Electronics 40, 10(2004) 1410-1416
Investigation of the Blueshift in Electroluminescence Spectra from MOCVD Grown InGaAs Quantum Dots
IEEE Journal of Quantum Electronics 40, 10(2004) 1410-1416
McGowan P, Tan H, Jagadish C
Impurity Free Vacancy Disordering of InGaAs Quantum Dots
Journal of Applied Physics 96, 12(2004) 7544-7548
Impurity Free Vacancy Disordering of InGaAs Quantum Dots
Journal of Applied Physics 96, 12(2004) 7544-7548
McGowan P, Tan H, Jagadish C
InGaAs Quantum Dots Grown with GaP Strain Compensation Layers
Journal of Applied Physics 95, 10(2004) 5710-5714
InGaAs Quantum Dots Grown with GaP Strain Compensation Layers
Journal of Applied Physics 95, 10(2004) 5710-5714
Li X, Li N, Demiguel S, Zheng X, Campbell J, Tan H, Jagadish C
A Partially Depleted Absorber Photodiode with Graded Doping Injection Regions
IEEE Photonics Technology Letters 16, 10(2004) 2326-2328
A Partially Depleted Absorber Photodiode with Graded Doping Injection Regions
IEEE Photonics Technology Letters 16, 10(2004) 2326-2328
Lloyd-Hughes J, Castro-Camus E, Fraser M, Jagadish C, Johnston M
Carrier Dynamics in Ion-Implanted GaAs Studied by Simulation and Observation of Terahertz Emission
Physical Review B: Condensed Matter and Materials 70(2004) 235330-1-6
Carrier Dynamics in Ion-Implanted GaAs Studied by Simulation and Observation of Terahertz Emission
Physical Review B: Condensed Matter and Materials 70(2004) 235330-1-6
Presenti G, Boudinov H, Carmody C, Jagadish C
Variable Temperature Hall-effect Measurements in Ion Bombarded InP
Nuclear Instruments and Methods in Physics Research: Section B 218(2004) 386-390
Variable Temperature Hall-effect Measurements in Ion Bombarded InP
Nuclear Instruments and Methods in Physics Research: Section B 218(2004) 386-390
Reece P, Gal M, Tan H, Jagadish C
Optical properties of erbium-implanted porous silicon microcavities
Applied Physics Letters 85, 16(2004) 3363-3365
Optical properties of erbium-implanted porous silicon microcavities
Applied Physics Letters 85, 16(2004) 3363-3365
Fraser M, Jagadish C
Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
Physical Review B: Condensed Matter and Materials 70, 23(2004) 1-6
Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
Physical Review B: Condensed Matter and Materials 70, 23(2004) 1-6
Boudinov H, Coelho A, Tan H, Jagadish C
Characterization of Deep Level Traps Responsible for Isolation of Proton Implanted GaAs
Journal of Applied Physics 93, 6(2003) 3234-3238
Characterization of Deep Level Traps Responsible for Isolation of Proton Implanted GaAs
Journal of Applied Physics 93, 6(2003) 3234-3238
Buda M, Hay J, Tan H, Fu L, Jagadish C, Reece P, Gal M
Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures
Journal of the Electrochemical Society 150, 8(2003) G481-G487
Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures
Journal of the Electrochemical Society 150, 8(2003) G481-G487
Buda M, Hay J, Tan H, Wong-Leung J, Jagadish C
Low Loss, Thin p-clad 980-nm InGaAs Semiconductor Laser Diodes with an Asymmetric Structure Design
IEEE Journal of Quantum Electronics 39, 5(2003) 625-633
Low Loss, Thin p-clad 980-nm InGaAs Semiconductor Laser Diodes with an Asymmetric Structure Design
IEEE Journal of Quantum Electronics 39, 5(2003) 625-633
Buda M, Tan H, Fu L, Josyula L, Jagadish C
Improvement of the Kink-free Operation in Ridge-waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge
IEEE Photonics Technology Letters 15, 12(2003) 1686-1688
Improvement of the Kink-free Operation in Ridge-waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge
IEEE Photonics Technology Letters 15, 12(2003) 1686-1688
Carmody C, Tan H, Jagadish C
Electrical Isolation of n- and p-In0.53Ga0.47As Epilayers using Ion Irradiation
Journal of Applied Physics 94, 10(2003) 6616-6620
Electrical Isolation of n- and p-In0.53Ga0.47As Epilayers using Ion Irradiation
Journal of Applied Physics 94, 10(2003) 6616-6620
Carmody C, Tan H, Jagadish C
Influence of Cap Layer on Implantation Induced Interdiffusion in InP/InGaAs Quantum Wells
Journal of Applied Physics 93, 8(2003) 4468-4470
Influence of Cap Layer on Implantation Induced Interdiffusion in InP/InGaAs Quantum Wells
Journal of Applied Physics 93, 8(2003) 4468-4470
Carmody C, Tan H, Jagadish C, Gaarder A, Marcinkevicius S
Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
Applied Physics Letters 82, 22(2003) 3913-3915
Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
Applied Physics Letters 82, 22(2003) 3913-3915
Carmody C, Tan H, Jagadish C, Gaarder A, Marcinkevicius S
Ultrafast carrier trapping and recombination in highly resistive ion implanted InP
Journal of Applied Physics 94, 2(2003) 1074-1078
Ultrafast carrier trapping and recombination in highly resistive ion implanted InP
Journal of Applied Physics 94, 2(2003) 1074-1078
Deenapanray P, Coleman V, Jagadish C
Electrical Characterization of Impurity-free Disordered p-type GaAs
Electrochemical and Solid-State Letters 6, 3(2003) G37-G40
Electrical Characterization of Impurity-free Disordered p-type GaAs
Electrochemical and Solid-State Letters 6, 3(2003) G37-G40
Deenapanray P, Gao Q, Jagadish C
Implant Isolation of Zn-doped GaAs Epilayers: Effects of Ion Species, Doping Concentration, and Implantation Temperature
Journal of Applied Physics 93, 11(2003) 9123-9129
Implant Isolation of Zn-doped GaAs Epilayers: Effects of Ion Species, Doping Concentration, and Implantation Temperature
Journal of Applied Physics 93, 11(2003) 9123-9129
Deenapanray P, Meyer W, Auret F, Krispin M, Jagadish C
Electron emission properties of a defect at ~(Ec?0.23eV) in impurity-free disorded n-GaAs
Physica B 340-342(2003) 315-319
Electron emission properties of a defect at ~(Ec?0.23eV) in impurity-free disorded n-GaAs
Physica B 340-342(2003) 315-319
Deenapanray P, Svensson B, Tan H, Jagadish C
A Comparison of Low-energy As Ion Implantation and Impurity-free Disordering Induced Defects in N-type GaAs Epitaxial Layers
Japanese Journal of Applied Physics 42, 3(2003) 1158-1163
A Comparison of Low-energy As Ion Implantation and Impurity-free Disordering Induced Defects in N-type GaAs Epitaxial Layers
Japanese Journal of Applied Physics 42, 3(2003) 1158-1163
Deenapanray P, Tan H, Jagadish C
Electrical Characterization of Impurity-free Disordering-induced Defects in n-GaAs using Native Oxide Layers
Applied Physics A: Materials Science and Processing 76(2003) 961-964
Electrical Characterization of Impurity-free Disordering-induced Defects in n-GaAs using Native Oxide Layers
Applied Physics A: Materials Science and Processing 76(2003) 961-964
Doshi S, Deenapanray P, Tan H, Jagadish C
Towards a Better Understanding of the Operative Mechanisms Underlying Impurity-free Disordering of GaAs: Effect of Stress
Journal of Vacuum Science and Technology B 21, 1(2003) 198-203
Towards a Better Understanding of the Operative Mechanisms Underlying Impurity-free Disordering of GaAs: Effect of Stress
Journal of Vacuum Science and Technology B 21, 1(2003) 198-203
Fu L, McGowan P, Tan H, Jagadish C, Reece P, Gal M
Suppression of Interdiffusion in InGaAs/GaAs Quantum Dots using Dielectric Layer of Titanium Dioxide
Applied Physics Letters 82, 16(2003) 2613-2615
Suppression of Interdiffusion in InGaAs/GaAs Quantum Dots using Dielectric Layer of Titanium Dioxide
Applied Physics Letters 82, 16(2003) 2613-2615
Gao Q, Deenapanray P, Tan H, Jagadish C
Implantation-induced Electrical Isolation of GaAsN Epilayers Grown by Metalorganic Chemical Vapor Deposition
Applied Physics Letters 83, 16(2003) 3386-3388
Implantation-induced Electrical Isolation of GaAsN Epilayers Grown by Metalorganic Chemical Vapor Deposition
Applied Physics Letters 83, 16(2003) 3386-3388
Gao Q, Tan H, Jagadish C, Deenapanray P
Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition
Japanese Journal of Applied Physics 42(2003) 6827-6832
Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition
Japanese Journal of Applied Physics 42(2003) 6827-6832
Ip K, Overberg M, Baik K, Wilson R, Kucheyev S, Williams J, Jagadish C, Ren F, Heo Y, Norton D, Zavada J, Pearton S
ICP Dry Etching of ZnO and Effects of Hydrogen
Solid-State Electronics 47(2003) 2289-2294
ICP Dry Etching of ZnO and Effects of Hydrogen
Solid-State Electronics 47(2003) 2289-2294
Ip K, Overberg M, Heo Y, Norton D, Pearton S, Stutz C, Kucheyev S, Jagadish C, Williams J, Luo B, Ren F, Look D, Zavada J
Hydrogen Incorporation, Diffusivity and Evolution in Bulk ZnO
Solid-State Electronics 47(2003) 2255-2259
Hydrogen Incorporation, Diffusivity and Evolution in Bulk ZnO
Solid-State Electronics 47(2003) 2255-2259
Kim S, Han I, Chung S, Jagadish C
Growth of Triangular Shaped InGaAs/GaAs Quantum Wire Structures
Journal of Materials Science Letters 22(2003) 467-469
Growth of Triangular Shaped InGaAs/GaAs Quantum Wire Structures
Journal of Materials Science Letters 22(2003) 467-469
Kucheyev S, Jagadish C, Williams J, Deenapanray P, Yano M, Koike K, Sasa S, Inoue M, Ogata K
Implant Isolation of ZnO
Journal of Applied Physics 93, 5(2003) 2972-2976
Implant Isolation of ZnO
Journal of Applied Physics 93, 5(2003) 2972-2976
Kucheyev S, Williams J, Jagadish C, Zou J, Evans C, Nelson A, Hamza A
Ion-Beam-Produced Structural Defects in ZnO
Physical Review B 67, 9(2003) 094115-1-11
Ion-Beam-Produced Structural Defects in ZnO
Physical Review B 67, 9(2003) 094115-1-11
Kuznetsov A, Wong-Leung J, Hallen A, Jagadish C, Svensson B
Dynamic Annealing in Ion Implanted SiC: Flux versus Temperature Dependance
Journal of Applied Physics 94, 11(2003) 7112-7115
Dynamic Annealing in Ion Implanted SiC: Flux versus Temperature Dependance
Journal of Applied Physics 94, 11(2003) 7112-7115
Lay M, McCallum J, Jagadish C
Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon
Physica B 340-342(2003) 748-751
Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon
Physica B 340-342(2003) 748-751
Leveque P, Hallen A, Svensson B, Wong-Leung J, Jagadish C, Privitera V
Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon
European Physical Journal - Applied Physics 23(2003) 5-9
Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon
European Physical Journal - Applied Physics 23(2003) 5-9
Leveque P, Kortegaard-Nielsen H, Pellegrino P, Hallen A, Svensson B, Kuznetsov A, Wong-Leung J, Jagadish C, Privitera V
Vacancy and Interstitial Depth Profiles in Ion-implanted Silicon
Journal of Applied Physics 93, 2(2003) 871-877
Vacancy and Interstitial Depth Profiles in Ion-implanted Silicon
Journal of Applied Physics 93, 2(2003) 871-877
McGowan P, Tan H, Jagadish C, Reece P, Gal M
Proton-Irradiation-Induced Intermixing in InGaAs Quantum Dots
Applied Physics Letters 82(2003) 2053-2055
Proton-Irradiation-Induced Intermixing in InGaAs Quantum Dots
Applied Physics Letters 82(2003) 2053-2055
Li Z, Lu W, Liu Q, Chen X, Shen S, Fu Y, Willander M, Tan H, Jagadish C
Determination of Carrier-transfer Length from Side-wall Quantum Well to Quantum Wire by Micro-photoluminescence Scanning
Journal of Electronic Materials 32, 8(2003) 913-916
Determination of Carrier-transfer Length from Side-wall Quantum Well to Quantum Wire by Micro-photoluminescence Scanning
Journal of Electronic Materials 32, 8(2003) 913-916
Linnarsson M, Zimmermann U, Wong-Leung J, Schoner A, Janson M, Jagadish C, Svensson B
Solubility Limits of Dopants in 4H-SiC
Applied Surface Science 203-204(2003) 427-432
Solubility Limits of Dopants in 4H-SiC
Applied Surface Science 203-204(2003) 427-432
Sears K, Buda M, Wong-Leung J, Fu L, Jagadish C, Stiff-Roberts A, Bhattacharya P
Influence of Rapid Thermal Annealing on a 30 Stack InAs/GaAs Quantum Dot Infrared Photodetector
Journal of Applied Physics 94, 8(2003) 5283-5289
Influence of Rapid Thermal Annealing on a 30 Stack InAs/GaAs Quantum Dot Infrared Photodetector
Journal of Applied Physics 94, 8(2003) 5283-5289
Sun B, Gal M, Gao Q, Tan H, Jagadish C, Puzzer T, Ouyang L, Zou J
Epitaxially Grown GaAsN Random Laser
Journal of Applied Physics 93, 10(2003) 5855-5858
Epitaxially Grown GaAsN Random Laser
Journal of Applied Physics 93, 10(2003) 5855-5858
Wang Y, Zou J, Kucheyev S, Williams J, Jagadish C, Li G
Nature of Planar Defects in Ion-implanted GaN
Electrochemical and Solid-State Letters 6, 3(2003) G34-G36
Nature of Planar Defects in Ion-implanted GaN
Electrochemical and Solid-State Letters 6, 3(2003) G34-G36
ARIES T, Lederer M, Kolev V, Luther-Davies B, Tan H, Jagadish C
Passively mode-locked, self-frequency doubled, diode-pumped Yb:YAl3(BO3)4 laser
Journal of Environmental Chemical Engineering 71(2003) 158-160
Passively mode-locked, self-frequency doubled, diode-pumped Yb:YAl3(BO3)4 laser
Journal of Environmental Chemical Engineering 71(2003) 158-160
Bradby J, Kucheyev S, Williams J, Jagadish C, Swain M, Munroe P, Phillips M
Contact-induced Defect Propagation in ZnO
Applied Physics Letters 80, 24(2002) 4537-4539
Contact-induced Defect Propagation in ZnO
Applied Physics Letters 80, 24(2002) 4537-4539
Carmody C, Boudinov H, Tan H, Jagadish C, Lederer M, Kolev V, Luther-Davies B, Dao L, Gal M
Ultrafast Trapping Times in Ion Implanted InP
Journal of Applied Physics 92, 5(2002) 2420-2423
Ultrafast Trapping Times in Ion Implanted InP
Journal of Applied Physics 92, 5(2002) 2420-2423
Deenapanray P, Gong B, Lamb R, Martin A, Fu L, Tan H, Jagadish C
Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers
Applied Physics Letters 80, 23(2002) 4351-4353
Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers
Applied Physics Letters 80, 23(2002) 4351-4353
Deenapanray P, Martin A, Doshi S, Tan H, Jagadish C
Atomic Relocation Processes in Impurity-Free Disordered p-GaAs Epilayers Studied by Deep Level Transient Spectroscopy
Applied Physics Letters 81, 19(2002) 3573-3575
Atomic Relocation Processes in Impurity-Free Disordered p-GaAs Epilayers Studied by Deep Level Transient Spectroscopy
Applied Physics Letters 81, 19(2002) 3573-3575
Deenapanray P, Martin A, McGowan P, Jagadish C
On the Pulsed Anodic Oxidation of n+-InP
Electrochemical and Solid-State Letters 5, 6(2002) G41-G44
On the Pulsed Anodic Oxidation of n+-InP
Electrochemical and Solid-State Letters 5, 6(2002) G41-G44
Fu L, Heijden R, Tan H, Jagadish C, Dao L, Gal M
Study of Intermixing in a GaAs/AlGaAs Quantum-well Structure using Dope Spin-on Silica Layers
Applied Physics Letters 80, 7(2002) 1171-1173
Study of Intermixing in a GaAs/AlGaAs Quantum-well Structure using Dope Spin-on Silica Layers
Applied Physics Letters 80, 7(2002) 1171-1173
Fu L, Wong-Leung J, Deenapanray P, Tan H, Jagadish C, Gong B, Lamb R, Cohen R, Reichert W, Dao L, Gal M
Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide
Journal of Applied Physics 92, 7(2002) 3579-3583
Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide
Journal of Applied Physics 92, 7(2002) 3579-3583
Gal M, Dao L, Kraft E, Johnston M, Carmody C, Tan H, Jagadish C
Thermally Stimulated Luminescence in Ion-Implanted GaAs
Journal of Luminescence 96(2002) 287-293
Thermally Stimulated Luminescence in Ion-Implanted GaAs
Journal of Luminescence 96(2002) 287-293
Ip K, Overberg M, Heo Y, Norton D, Pearton S, Kucheyev S, Jagadish C, Williams J, Wilson R, Zavada J
Thermal Stability of Ion-implanted Hydrogen in ZnO
Applied Physics Letters 81, 21(2002) 3996-3998
Thermal Stability of Ion-implanted Hydrogen in ZnO
Applied Physics Letters 81, 21(2002) 3996-3998
Kucheyev S, Boudinov H, Williams J, Jagadish C, Li G
Effect of Irradiation Temperature and Ion Flux on Electrical Isolation of GaN
Journal of Applied Physics 91, 7(2002) 4117-4120
Effect of Irradiation Temperature and Ion Flux on Electrical Isolation of GaN
Journal of Applied Physics 91, 7(2002) 4117-4120
Kucheyev S, Bradby J, Williams J, Jagadish C, Swain M
Mechanical Deformation of Single-crystal ZnO
Applied Physics Letters 80, 6(2002) 956-958
Mechanical Deformation of Single-crystal ZnO
Applied Physics Letters 80, 6(2002) 956-958
Kucheyev S, Deenapanray P, Jagadish C, Williams J, Yano M, Koike K, Sasa S, Inoue M, Ogata K
Electrical Isolation of ZnO by Ion Bombardment
Applied Physics Letters 81, 18(2002) 3350-3352
Electrical Isolation of ZnO by Ion Bombardment
Applied Physics Letters 81, 18(2002) 3350-3352
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C, Li G
X-ray Spectrometry Investigation of Electrical Isolation in GaN
Journal of Applied Physics 91, 6(2002) 3940-3942
X-ray Spectrometry Investigation of Electrical Isolation in GaN
Journal of Applied Physics 91, 6(2002) 3940-3942
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C, Li G
Chemical Origin of the Yellow Luminescence in GaN
Journal of Applied Physics 91, 9(2002) 5857-5874
Chemical Origin of the Yellow Luminescence in GaN
Journal of Applied Physics 91, 9(2002) 5857-5874
Kucheyev S, Williams J, Jagadish C, Zou J, Li G
Blistering of H-implanted GaN
Journal of Applied Physics 91, 6(2002) 3928-3930
Blistering of H-implanted GaN
Journal of Applied Physics 91, 6(2002) 3928-3930
Kucheyev S, Williams J, Zou J, Li G, Jagadish C, Manasreh M, Pophristic M, Guo S, Ferguson I
Structural Disorder in Ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5(2002) 787-789
Structural Disorder in Ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5(2002) 787-789
Kucheyev S, Williams J, Zou J, Jagadish C, Pophristic M, Guo S, Ferguson I, Manasreh M
Ion-beam-produced Damage and its Stability in AIN Films
Journal of Applied Physics 92, 7(2002) 3554-3558
Ion-beam-produced Damage and its Stability in AIN Films
Journal of Applied Physics 92, 7(2002) 3554-3558
Kucheyev S, Williams J, Zou J, Li G, Jagadish C, Titov A
Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 782-786
Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature
Nuclear Instruments and Methods in Physics Research: Section B 190(2002) 782-786
Lederer M, Hildebrandt M, Kolev V, Luther-Davies B, Taylor B, Dawes J, Dekker P, Piper J, Tan H, Jagadish C
Passive Mode Locking of a Self-frequency-doubling Yb:Yal3 (BO3)4 Laser
Optics Letters 27, 6(2002) 436-438
Passive Mode Locking of a Self-frequency-doubling Yb:Yal3 (BO3)4 Laser
Optics Letters 27, 6(2002) 436-438
Lippen T, Boudinov H, Tan H, Jagadish C
Electrical Isolation of AlxGa1-xAs by Ion Irradiation
Applied Physics Letters 80(2002) 264-266
Electrical Isolation of AlxGa1-xAs by Ion Irradiation
Applied Physics Letters 80(2002) 264-266
Monakhov E, Wong-Leung J, Kuznetsov A, Jagadish C, Svensson B
Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation
Physical Review B 65(2002) 245201-1-9
Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation
Physical Review B 65(2002) 245201-1-9
Pellegrino P, Leveque P, Kortegaard-Nielsen H, Hallen A, Wong-Leung J, Jagadish C, Svensson B
Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon
Nuclear Instruments and Methods in Physics Research: Section B 186(2002) 334-338
Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon
Nuclear Instruments and Methods in Physics Research: Section B 186(2002) 334-338
Sun B, Gal M, Gao Q, Tan H, Jagadish C
On the Nature of Radiative Recombination in GaAsN
Applied Physics Letters 81, 23(2002) 4368-4370
On the Nature of Radiative Recombination in GaAsN
Applied Physics Letters 81, 23(2002) 4368-4370
Jagadish C, Svensson B, Wong-Leung J
"Response to "comment on 'Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation'" [Appl. Phys. Lett. 80, 1492 (2002)]"
Applied Physics Letters 80, 8(2002) 1494-1495
"Response to "comment on 'Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation'" [Appl. Phys. Lett. 80, 1492 (2002)]"
Applied Physics Letters 80, 8(2002) 1494-1495
Tan H, Jagadish C
Electrical isolation of Al xGa 1-xAs by ion irradiation
Applied Physics Letters 80, 2(2002) 264-266
Electrical isolation of Al xGa 1-xAs by ion irradiation
Applied Physics Letters 80, 2(2002) 264-266
Williams J, Jagadish C, Li G
Structural disorder in ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5(2002) 787-789
Structural disorder in ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5(2002) 787-789
Boudinov H, de Souza J, Jagadish C
Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 235-240
Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 235-240
Boudinov H, Kucheyev S, Williams J, Jagadish C, Li G
Electrical isolation of GaN by MeV ion irradiation
Applied Physics Letters 78, 7(2001) 943-945
Electrical isolation of GaN by MeV ion irradiation
Applied Physics Letters 78, 7(2001) 943-945
Boudinov H, Tan H, Jagadish C
Electrical isolation of n-type and p-type InP layers by proton bombardment
Journal of Applied Physics 89, 10(2001) 5343-5347
Electrical isolation of n-type and p-type InP layers by proton bombardment
Journal of Applied Physics 89, 10(2001) 5343-5347
Cohen M, Allerman A, Choquette K, Jagadish C
Electrically Steerable Lasers using Wide-Aperture VCSELs
IEEE Photonics Technology Letters 13, 6(2001) 544-546
Electrically Steerable Lasers using Wide-Aperture VCSELs
IEEE Photonics Technology Letters 13, 6(2001) 544-546
Dao L, Gal M, Fu L, Tan H, Jagadish C
Possibility of improved frequency response from intermixed quantum-well devices
Superlattices and Microstructures 29, 2(2001) 105-110
Possibility of improved frequency response from intermixed quantum-well devices
Superlattices and Microstructures 29, 2(2001) 105-110
Deenapanray P, Jagadish C
Effect of Stress on Impurity-free quantum well intermixing
Electrochemical and Solid-State Letters 4(2001) G11-G13
Effect of Stress on Impurity-free quantum well intermixing
Electrochemical and Solid-State Letters 4(2001) G11-G13
Deenapanray P, Jagadish C
Impurity free intermixing of GaAs/AlGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5(2001) 1962-1966
Impurity free intermixing of GaAs/AlGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5(2001) 1962-1966
Deenapanray P, Lay M, Aberg D, Tan H, Svensson B, Auret F, Jagadish C
Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition
Physica B 308-310(2001) 776-779
Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition
Physica B 308-310(2001) 776-779
Deenapanray P, Martin A, Jagadish C
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16(2001) 2561-2563
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16(2001) 2561-2563
Fu L, Tan H, Jagadish C, Li N, Li N, Liu Q, Lu W, Shen S
Tuning the detection wavelength of quantum-well infrared photodetectors by single-high energy implantation
Applied Physics Letters 78, 1(2001) 10-12
Tuning the detection wavelength of quantum-well infrared photodetectors by single-high energy implantation
Applied Physics Letters 78, 1(2001) 10-12
Fu L, Tan H, Jagadish C, Li N, Li N, Liu Q, Lu W, Shen S
Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing
Infrared Physics and Technology 42(2001) 171-175
Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing
Infrared Physics and Technology 42(2001) 171-175
Fu Y, Willander M, Liu Q, Lu W, Shen S, Tan H, Jagadish C, Zou J, Cockayne D
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4(2001) 2351-2356
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4(2001) 2351-2356
Gal M, Wengler M, Ilyas S, Rofii I, Tan H, Jagadish C
Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler
Nuclear Instruments and Methods in Physics Research: Section B 173(2001) 528-532
Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler
Nuclear Instruments and Methods in Physics Research: Section B 173(2001) 528-532
Giniunas L, Danielius R, Tan H, Jagadish C, Adomavicius R, Krotkus A
Electron and trap dynamics in As-ion-implanted and annealed GaAs
Applied Physics Letters 78, 12(2001) 1667-1669
Electron and trap dynamics in As-ion-implanted and annealed GaAs
Applied Physics Letters 78, 12(2001) 1667-1669
Kucheyev S, Bradby J, Williams J, Jagadish C, Swain M, Li G
Deformation Behavior of Ion-Beam-Modified GaN
Applied Physics Letters 78, 2(2001) 156-158
Deformation Behavior of Ion-Beam-Modified GaN
Applied Physics Letters 78, 2(2001) 156-158
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C, Li G
Cathodoluminescence Depth Profiling of Ion-Implanted GaN
Applied Physics Letters 78, 1(2001) 34-36
Cathodoluminescence Depth Profiling of Ion-Implanted GaN
Applied Physics Letters 78, 1(2001) 34-36
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish C
Effects of excitation density on cathodoluminescence from GaN
Applied Physics Letters 79, 14(2001) 2154-2156
Effects of excitation density on cathodoluminescence from GaN
Applied Physics Letters 79, 14(2001) 2154-2156
Kucheyev S, Williams J, Jagadish C, Zou J, Li G, Titov A
Effect of ion species on the accumulation of ion-beam damage in GaN
Physical Review B 64(2001) 035202/1-10
Effect of ion species on the accumulation of ion-beam damage in GaN
Physical Review B 64(2001) 035202/1-10
Kucheyev S, Williams J, Titov A, Li G, Jagadish C
Effect of the density of collision cascades on implantation damage in GaN
Applied Physics Letters 78, 18(2001) 2694-2696
Effect of the density of collision cascades on implantation damage in GaN
Applied Physics Letters 78, 18(2001) 2694-2696
Kucheyev S, Williams J, Zou J, Jagadish C, Li G
The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN
Nuclear Instruments and Methods in Physics Research: Section B 178(2001) 209-213
The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN
Nuclear Instruments and Methods in Physics Research: Section B 178(2001) 209-213
Kucheyev S, Williams J, Zou J, Bradby J, Jagadish C, Li G
Ion-beam-induced reconstruction of amorphous GaN
Physical Review B 63(2001) 113202-1-4
Ion-beam-induced reconstruction of amorphous GaN
Physical Review B 63(2001) 113202-1-4
Kucheyev S, Williams J, Zou J, Jagadish C, Li G
Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures
Applied Physics Letters 78, 10(2001) 1373-1375
Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures
Applied Physics Letters 78, 10(2001) 1373-1375
Kucheyev S, Williams J, Zou J, Jagadish C, Li G
High-dose ion implantation into GaN
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 214-218
High-dose ion implantation into GaN
Nuclear Instruments and Methods in Physics Research: Section B 175-177(2001) 214-218
Kuznetsov A, Janson M, Hallen A, Svensson B, Jagadish C, Grunleitner H, Pensl G
Channeling Measurements of Ion Implantation Damage in 4H-SiC
Materials Science Forum 353-356(2001) 595-598
Channeling Measurements of Ion Implantation Damage in 4H-SiC
Materials Science Forum 353-356(2001) 595-598
Lederer M, Kolev V, Luther-Davies B, Tan H, Jagadish C
Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking
Journal of Physics D: Applied Physics 34, 16(2001) 2455-2464
Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking
Journal of Physics D: Applied Physics 34, 16(2001) 2455-2464
Li N, Fu L, Li N, Chan Y, Lu W, Shen S, Tan H, Jagadish C
The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
Journal of Crystal Growth 222(2001) 786-790
The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
Journal of Crystal Growth 222(2001) 786-790
Liu Q, Sasaki A, Ohno N, Li Z, Lu W, Shen S, Fu Y, Willander M, Tan H, Jagadish C
Evidence of Blocking Effect on Carrier Trapping Process by Necking Region in a Very Narrow AIGaAs/GaAs V-grooved Quantum Wire Structure
Journal of Applied Physics 90, 10(2001) 5438-5440
Evidence of Blocking Effect on Carrier Trapping Process by Necking Region in a Very Narrow AIGaAs/GaAs V-grooved Quantum Wire Structure
Journal of Applied Physics 90, 10(2001) 5438-5440
Liu X, Lu W, Shen S, Tan H, Jagadish C, Zou J
Application of Selective Implantation in AIGaAs/InGaAs/GaAs Pseudomorphic Single Quantum Wire Structures
Nanotechnology 1(2001) 389-392
Application of Selective Implantation in AIGaAs/InGaAs/GaAs Pseudomorphic Single Quantum Wire Structures
Nanotechnology 1(2001) 389-392
Lu W, Liu Q, Li Z, Shen S, Zhao Q, Fu Y, Willander M, Tan H, Jagadish C, Zou J, Cockayne D
Carrier transfer between V-grooved quantum wire and vertical quantum well
Physics Letters A 280(2001) 77-80
Carrier transfer between V-grooved quantum wire and vertical quantum well
Physics Letters A 280(2001) 77-80
Pellegrino P, Leveque P, Lalita J, Hallen A, Jagadish C, Svensson B
Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Physical Review B 64(2001) 195211/1-10
Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Physical Review B 64(2001) 195211/1-10
Pellegrino P, Leveque P, Wong-Leung J, Jagadish C, Svensson B
Separation of vacancy and interstitial depth profiles in ion-implanted silicon: experimental observation
Applied Physics Letters 78, 22(2001) 3442-3444
Separation of vacancy and interstitial depth profiles in ion-implanted silicon: experimental observation
Applied Physics Letters 78, 22(2001) 3442-3444
Svensson B, Hallen A, Linnarsson M, Kuznetsov A, Janson M, Aberg D, Osterman J, Persson P, Hultman L, Storasta L, Carlsson F, Bergman J, Jagadish C, Morvan E
Doping of Silicon Carbide by Ion Implantation
Materials Science Forum 353-356(2001) 549-554
Doping of Silicon Carbide by Ion Implantation
Materials Science Forum 353-356(2001) 549-554
Wong-Leung J, Jagadish C, Conway M, Fitzgerald J
Effect of implant temperature on secondary defects created by MeV Sn implantation is silicon
Journal of Applied Physics 89(2001) 2556-2559
Effect of implant temperature on secondary defects created by MeV Sn implantation is silicon
Journal of Applied Physics 89(2001) 2556-2559
Bradby J, Williams J, Jagadish C, Swain M, Phillips M
Mechanical properties of As-grown and ion-beam-modified GaN films
Materials Research Society Symposium Proceedings 649(2001) Q5.5.1-Q5.5.6
Mechanical properties of As-grown and ion-beam-modified GaN films
Materials Research Society Symposium Proceedings 649(2001) Q5.5.1-Q5.5.6
Deenapanray P, Jagadish C
Impurity-free intermixing of GaAs/AIGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5(2001) 1962-1966
Impurity-free intermixing of GaAs/AIGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5(2001) 1962-1966
Deenapanray P, Martin A, Jagadish C
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16(2001) 2561-2563
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16(2001) 2561-2563
Tan H, Jagadish C
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4(2001) 2351-2356
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4(2001) 2351-2356
Tan H, Jagadish C
Application of Selective Implantation in Al 0.5Ga 0.5As/In 0.25Ga 0.75As/GaAs Pseudomorphic Single Quantum Wire Structures
Journal of Nanoscience and Nanotechnology 1, 4(2001) 389-392
Application of Selective Implantation in Al 0.5Ga 0.5As/In 0.25Ga 0.75As/GaAs Pseudomorphic Single Quantum Wire Structures
Journal of Nanoscience and Nanotechnology 1, 4(2001) 389-392
Babinski M, Siwiec-Matuszyk J, Baranowski J, Li G, Jagadish C
Transport and quantum electron mobility in the modulation Si d-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy
Applied Physics Letters 77(2000) 999-1001
Transport and quantum electron mobility in the modulation Si d-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy
Applied Physics Letters 77(2000) 999-1001
Dao L, Gal M, Carmody C, Tan H, Jagadish C
A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells
Journal of Applied Physics 88(2000) 5252-5254
A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells
Journal of Applied Physics 88(2000) 5252-5254
Dao L, Gal M, Li G, Jagadish C
Photoluminescence in delta-doped InGaAs/GaAs single quantum wells
Journal of Applied Physics 87(2000) 3896-3899
Photoluminescence in delta-doped InGaAs/GaAs single quantum wells
Journal of Applied Physics 87(2000) 3896-3899
Deenapanray P, Fu L, Petravic M, Jagadish C, Gong B, Lamb R
Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells
Surface and Interface Analysis 29(2000) 754-760
Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells
Surface and Interface Analysis 29(2000) 754-760
Deenapanray P, Tan H, Jagadish C
Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells
Materials Research Society Symposium Proceedings 607(2000) 491-502
Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells
Materials Research Society Symposium Proceedings 607(2000) 491-502
Deenapanray P, Tan H, Cohen M, Gaff K, Petravic M, Jagadish C
Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147(2000) 1950-1956
Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147(2000) 1950-1956
Deenapanray P, Tan H, Fu L, Jagadish C
Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
Electrochemical and Solid-State Letters 3(2000) 196-199
Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
Electrochemical and Solid-State Letters 3(2000) 196-199
Deenapanray P, Tan H, Jagadish C, Auret F
Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers
Journal of Applied Physics 88(2000) 5255-5261
Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers
Journal of Applied Physics 88(2000) 5255-5261
Deenapanray P, Tan H, Jagadish C, Auret F
Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition
Applied Physics Letters 77(2000) 696-698
Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition
Applied Physics Letters 77(2000) 696-698
Fu L, Deenapanray P, Tan H, Jagadish C, Dao L, Gal M
Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing
Applied Physics Letters 76(2000) 837-839
Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing
Applied Physics Letters 76(2000) 837-839
Fu Y, Willander M, Lu W, Liu Q, Shen S, Jagadish C, Gal M, Zou J, Cockayne D
Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
Physical Review B 61(2000) 8306-8311
Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
Physical Review B 61(2000) 8306-8311
Gingrich H, Morath C, Manasreh M, Ballet P, Smathers J, Salamo G, Jagadish C
Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/A10.3Ga0.7As Multiple Quantum Wells
Materials Research Society Symposium Proceedings 607(2000) 217-222
Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/A10.3Ga0.7As Multiple Quantum Wells
Materials Research Society Symposium Proceedings 607(2000) 217-222
Hegeler F, Manasreh M, Morath C, Ballet P, Yang H, Salamo G, Tan H, Jagadish C
Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells
Applied Physics Letters 77(2000) 2867-2869
Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells
Applied Physics Letters 77(2000) 2867-2869
Kuball M, Hayes J, Suski T, Jun J, Leszczynski M, Domagala J, Tan H, Williams J, Jagadish C
High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering
Journal of Applied Physics 87(2000) 2736-2741
High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering
Journal of Applied Physics 87(2000) 2736-2741
Kucheyev S, Bradby J, Williams J, Jagadish C, Toth M, Phillips M, Swain M
Nanoindentation of Epitaxial GaN Films
Applied Physics Letters 77(2000) 3373-3375
Nanoindentation of Epitaxial GaN Films
Applied Physics Letters 77(2000) 3373-3375
Kucheyev S, Williams J, Jagadish C, Li G, Pearton S
Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN
Applied Physics Letters 76(2000) 3899-3901
Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN
Applied Physics Letters 76(2000) 3899-3901
Kucheyev S, Williams J, Jagadish C, Zou J, Craig V, Li G
Ion-Beam-Induced Porosity of GaN
Applied Physics Letters 77(2000) 1455-1457
Ion-Beam-Induced Porosity of GaN
Applied Physics Letters 77(2000) 1455-1457
Kucheyev S, Williams J, Jagadish C, Zou J, Li G
Damage Buildup in GaN under Ion Bombardment
Physical Review B 62(2000) 7510-7522
Damage Buildup in GaN under Ion Bombardment
Physical Review B 62(2000) 7510-7522
Kucheyev S, Williams J, Jagadish C, Zou J, Li G
Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment
Journal of Applied Physics 88(2000) 5493-5495
Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment
Journal of Applied Physics 88(2000) 5493-5495
Kucheyev S, Williams J, Zou J, Jagadish C, Li G
Ion beam induced dissociation and bubble formation in GaN
Applied Physics Letters 77(2000) 3577-3579
Ion beam induced dissociation and bubble formation in GaN
Applied Physics Letters 77(2000) 3577-3579
Liu Q, Li N, Li Z, Lu W, Shen S, Fu Y, Willander M, Tan H, Jagadish C, Zou J
Investigation of AlGaAs/GaAs V-grooved Quantum Wire Infrared
Japanese Journal of Applied Physics 39(2000) 5124-5127
Investigation of AlGaAs/GaAs V-grooved Quantum Wire Infrared
Japanese Journal of Applied Physics 39(2000) 5124-5127
Liu Q, Li N, Lu W, Li N, Yuan X, Shen S, Fu L, Tan H, Jagadish C
Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing
Japanese Journal of Applied Physics 39(2000) 1687-1689
Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing
Japanese Journal of Applied Physics 39(2000) 1687-1689
Liu Q, Li Z, Chen X, Lu W, Shen S, Tan H, Yuan S, Jagadish C
Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures
Physics Letters A 271(2000) 213-216
Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures
Physics Letters A 271(2000) 213-216
Liu Q, Lu W, Chen X, Shen S, Tan H, Yuan S, Jagadish C, Johnston M, Dao L, Gal M, Zou J, Cockayne D
Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
Journal of Applied Physics 87(2000) 1566-1568
Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
Journal of Applied Physics 87(2000) 1566-1568
Marcinkevicius S, Jagadish C, Tan H, Kaminska M, Korona K, Adomavicius R, Krotkus A
Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers
Applied Physics Letters 76(2000) 1306-1308
Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers
Applied Physics Letters 76(2000) 1306-1308
Schmidt D, Svensson B, Seibt M, Jagadish C, Davies G
Photoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Micrsocopy Measurements on MeV Self-Ion Implanted and Annealed n-type Silicon
Journal of Applied Physics 88(2000) 2309-2317
Photoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Micrsocopy Measurements on MeV Self-Ion Implanted and Annealed n-type Silicon
Journal of Applied Physics 88(2000) 2309-2317
Toth M, Kucheyev S, Williams J, Jagadish C, Phillips M, Li G
Imaging Charge Trap Distributions in GaN Using Environmental Scanning Electron Micrsocopy
Applied Physics Letters 77(2000) 1342-1344
Imaging Charge Trap Distributions in GaN Using Environmental Scanning Electron Micrsocopy
Applied Physics Letters 77(2000) 1342-1344
Wong-Leung J, Fatima S, Jagadish C, Fitzgerald J
Effect of implant temperature on extended defects created by ion implantation in silicon
Defects and Diffusion Forum Part A: Defect and Diffusion Forum 183, 1(2000) 163-169
Effect of implant temperature on extended defects created by ion implantation in silicon
Defects and Diffusion Forum Part A: Defect and Diffusion Forum 183, 1(2000) 163-169
Wong-Leung J, Fatima S, Jagadish C, Fitzgerald J, Chou C, Zou J, Cockayne D
Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon
Journal of Applied Physics 88(2000) 1312-1318
Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon
Journal of Applied Physics 88(2000) 1312-1318
Zhao Q, Willander M, Lu W, Liu Q, Shen S, Tan H, Jagadish C, Zou J, Cockayne D
Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
Journal of Applied Physics 88(2000) 2519-2522
Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
Journal of Applied Physics 88(2000) 2519-2522
ARIES T, Fu L, Tan H, Jagadish C
Application of high energy implantation in tuning the detection wavelength of quantum well infrared photodetectors
Journal of Environmental Chemical Engineering 1(2000) 88-89
Application of high energy implantation in tuning the detection wavelength of quantum well infrared photodetectors
Journal of Environmental Chemical Engineering 1(2000) 88-89
ARIES T, Tan H, Williams J, Jagadish C
The use of micro-raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1(2000)
The use of micro-raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1(2000)
Deenapanray P, Tan H, Gaff K, Petravic M, Jagadish C
Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147, 5(2000) 1950-1956
Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147, 5(2000) 1950-1956
Dou H, Fu L, Jagadish C, Tan H
Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector
Journal of Environmental Chemical Engineering 19, 1(2000) 25-28
Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector
Journal of Environmental Chemical Engineering 19, 1(2000) 25-28
Dou H, Tan H, Fu L, Jagadish C
Performance comparison of GaAs/AlGaAs quantum well infrared photodetectors grown by MOCVD and MBE
Journal of Environmental Chemical Engineering 21, 5(2000) 441-444
Performance comparison of GaAs/AlGaAs quantum well infrared photodetectors grown by MOCVD and MBE
Journal of Environmental Chemical Engineering 21, 5(2000) 441-444
Tan H, Jagadish C
Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures
Japanese Journal of Applied Physics 39, 9 A(2000) 5124-5127
Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures
Japanese Journal of Applied Physics 39, 9 A(2000) 5124-5127
Tan H, Jagadish C
The micro-photoluminescence of a single V-groove GaAs/AlGaAs quantum wire
Wuli Xuebao/Acta Physica Sinica 49, 9(2000) 1812-1813
The micro-photoluminescence of a single V-groove GaAs/AlGaAs quantum wire
Wuli Xuebao/Acta Physica Sinica 49, 9(2000) 1812-1813
Williams J, Jagadish C
Ion-beam-induced dissociation and bubble formation in GaN
Applied Physics Letters 77, 22(2000) 3577-3579
Ion-beam-induced dissociation and bubble formation in GaN
Applied Physics Letters 77, 22(2000) 3577-3579
Williams J, Jagadish C
The use of micro-raman spectroscopy to monitor high-pressure hightemperature annealing of ion-implanted GaN films
Materials Research Society Symposium Proceedings 595(2000) W11461-W11466
The use of micro-raman spectroscopy to monitor high-pressure hightemperature annealing of ion-implanted GaN films
Materials Research Society Symposium Proceedings 595(2000) W11461-W11466
Cohen M, Tan H, Jagadish C
Intermixing induced resonance shift in GaAs/AlxOy distributed Bragg resonators
Journal of Applied Physics 85(1999) 7964-7966
Intermixing induced resonance shift in GaAs/AlxOy distributed Bragg resonators
Journal of Applied Physics 85(1999) 7964-7966
Fatima S, Jagadish C, Lalita J, Svensson B, Hallen A
Hydrogen Interaction with Implantation Induced Point Defects in p-type Silicon
Journal of Applied Physics 85, 5(1999) 2562-2567
Hydrogen Interaction with Implantation Induced Point Defects in p-type Silicon
Journal of Applied Physics 85, 5(1999) 2562-2567
Fatima S, Wong-Leung J, Fitzgerald J, Jagadish C
Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si
Applied Physics Letters 74(1999) 1141-1143
Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si
Applied Physics Letters 74(1999) 1141-1143
Fu L, Tan H, Johnston M, Gal M, Jagadish C
Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers
Journal of Applied Physics 85(1999) 6786-6789
Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers
Journal of Applied Physics 85(1999) 6786-6789
Fu Y, Willander M, Liu Q, Lu W, Shen H, Tan H, Yuan S, Jagadish C
Energy Sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As Quantum Wire
Superlattices and Microstructures 26, 5(1999) 307-315
Energy Sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As Quantum Wire
Superlattices and Microstructures 26, 5(1999) 307-315
Iordache G, Buda M, Acket G, van de Roer T, Kaufmann L, Karouta F, Jagadish C, Tan H
Continuous wave operation of low confinement asymmetric structure diode lasers
Electronics Letters 35(1999) 148-149
Continuous wave operation of low confinement asymmetric structure diode lasers
Electronics Letters 35(1999) 148-149
Johnston M, Gal M, Chen Z, Liu Q, Li N, Lu W, Shen H, Fu L, Tan H, Jagadish C, Li N
Interdiffused quantum well infrared photodetector tuning for colour sensitive arrays
Applied Physics Letters 75(1999) 923-925
Interdiffused quantum well infrared photodetector tuning for colour sensitive arrays
Applied Physics Letters 75(1999) 923-925
Karouta F, Tan H, Jagadish C, van Roy B
Vertical Integration of Dual Wavelength Index Guided GaAs-Lasers
Electronics Letters 35(1999) 815-817
Vertical Integration of Dual Wavelength Index Guided GaAs-Lasers
Electronics Letters 35(1999) 815-817
Lederer M, Luther-Davies B, Tan H, Jagadish C, Akhmediev N, Soto-Crespo J
Multipulse Operation of a Ti:sapphire Laser Mode locked by an Ion-Implanted Semiconductor Saturable-Absorber Mirror
Journal of the Optical Society of America B 16, 6(1999) 895-904
Multipulse Operation of a Ti:sapphire Laser Mode locked by an Ion-Implanted Semiconductor Saturable-Absorber Mirror
Journal of the Optical Society of America B 16, 6(1999) 895-904
Lederer M, Luther-Davies B, Tan H, Jagadish C, Haiml M, Siegner U, Keller U
Nonlinear Optical Absorption and Temporal Response of Arsenic-and Oxygen-Implantated GaAs
Applied Physics Letters 74, 14(1999) 1993-1995
Nonlinear Optical Absorption and Temporal Response of Arsenic-and Oxygen-Implantated GaAs
Applied Physics Letters 74, 14(1999) 1993-1995
Liu Q, Chen X, Lu W, Xu W, Yuan X, Li N, Shen H, Yuan S, Tan H, Jagadish C, Li N
Wavelength tuning of GaAs/AlGaAs quantum well infrared photodetectors by thermal interdiffusion
Japanese Journal of Applied Physics 38(1999) 5044-5045
Wavelength tuning of GaAs/AlGaAs quantum well infrared photodetectors by thermal interdiffusion
Japanese Journal of Applied Physics 38(1999) 5044-5045
Liu Q, Lu W, Li Z, Chen Y, Shen H, Fu Y, Willander M, Tan H, Yuan S, Jagadish C, Zou J, Cockayne D
Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealing
Applied Physics Letters 75(1999) 3339-3341
Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealing
Applied Physics Letters 75(1999) 3339-3341
Manasreh M, Ballet P, Smathers J, Salamo G, Jagadish C
Proton irradiation effects on the inter sub-band transitions in GaAs/AlGaAs multiple quantum wells with bulk and superlattice barriers
Applied Physics Letters 75(1999) 525-527
Proton irradiation effects on the inter sub-band transitions in GaAs/AlGaAs multiple quantum wells with bulk and superlattice barriers
Applied Physics Letters 75(1999) 525-527
Tan H, Jagadish C, Lederer M, Luther-Davies B, Zou J, Cockayne D, Haiml M, Siegner U, Keller U
Role of Implantation-Induced Defects on the Response Time of Semiconductor Saturable Absorbers
Applied Physics Letters 75, 10(1999) 1437-1439
Role of Implantation-Induced Defects on the Response Time of Semiconductor Saturable Absorbers
Applied Physics Letters 75, 10(1999) 1437-1439
Zhao Q, Willander M, Holtz P, Lu W, Dou H, Shen H, Li G, Jagadish C
Radiative recombination in p-type delta doped layers in GaAs
Physical Review B 60(1999) R2193-R2196
Radiative recombination in p-type delta doped layers in GaAs
Physical Review B 60(1999) R2193-R2196
Deenapanray P, Tan H, Jagadish C
Impurity-free interdiffusion in GaAs/Al 0.54Ga 0.46As multiple quantum wells capped with PECVD SiO x: Effect of nitrous oxide flow
Griffith Asia Quarterly (1999) 361-364
Impurity-free interdiffusion in GaAs/Al 0.54Ga 0.46As multiple quantum wells capped with PECVD SiO x: Effect of nitrous oxide flow
Griffith Asia Quarterly (1999) 361-364
Deenapanray P, Tan H, Petravic M, Williams J, Jagadish C
Characterization of low-temperature PECVD silicon dioxide films
Materials Research Society Symposium Proceedings 555(1999) 197-202
Characterization of low-temperature PECVD silicon dioxide films
Materials Research Society Symposium Proceedings 555(1999) 197-202
Dou H, Jagadish C
Photoluminescence of Si d-doped InGaAs/GaAs heterostructures with double beam excitation
Griffith Asia Quarterly (1999) 516-518
Photoluminescence of Si d-doped InGaAs/GaAs heterostructures with double beam excitation
Griffith Asia Quarterly (1999) 516-518
Dou H, Jagadish C
Photomodulation spectroscopy of Zn d-doped GaAs
Griffith Asia Quarterly (1999) 519-521
Photomodulation spectroscopy of Zn d-doped GaAs
Griffith Asia Quarterly (1999) 519-521
Dou H, Jagadish C
Photoluminescence of selectively Si d-doped In0.2Ga0.8As heterostructure at 77K
Journal of Environmental Chemical Engineering 20, 7(1999) 573-577
Photoluminescence of selectively Si d-doped In0.2Ga0.8As heterostructure at 77K
Journal of Environmental Chemical Engineering 20, 7(1999) 573-577
Dou H, Jagadish C
Photoluminescence of InGaAs/GaAs with double lights
Journal of Environmental Chemical Engineering 20, 8(1999) 656-661
Photoluminescence of InGaAs/GaAs with double lights
Journal of Environmental Chemical Engineering 20, 8(1999) 656-661
Dou H, Li G, Jagadish C
Radiative recombination in p-type d-doped layers in GaAs
Physical Review B 60, 4(1999) R2193-R2196
Radiative recombination in p-type d-doped layers in GaAs
Physical Review B 60, 4(1999) R2193-R2196
Fatima S, Jagadish C, Wong-Leung J
Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions
Griffith Asia Quarterly (1999) 505-508
Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions
Griffith Asia Quarterly (1999) 505-508
Fu L, Tan H, Jagadish C
Interdiffused quantum-well infrared photodetectors for color sensitive arrays
Applied Physics Letters 75, 7(1999) 923-925
Interdiffused quantum-well infrared photodetectors for color sensitive arrays
Applied Physics Letters 75, 7(1999) 923-925
Fu L, Tan H, Jagadish C
Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation
Griffith Asia Quarterly (1999) 355-357
Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation
Griffith Asia Quarterly (1999) 355-357
Fu L, Tan H, Jagadish C, Gal M
Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices
Griffith Asia Quarterly (1999) 352-354
Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices
Griffith Asia Quarterly (1999) 352-354
Jagadish C
Selective intermixing of ion irradiated semiconductor heterostructures
Materials Research Society Symposium Proceedings 540(1999) 15-26
Selective intermixing of ion irradiated semiconductor heterostructures
Materials Research Society Symposium Proceedings 540(1999) 15-26
Jagadish C
Changes in interdiffusion associated with thermally oxidized GaAs
Griffith Asia Quarterly (1999) 218-221
Changes in interdiffusion associated with thermally oxidized GaAs
Griffith Asia Quarterly (1999) 218-221
Jagadish C
Proton irradiation effects on the intersubband transition in GaAs/AlGaAs multiple quantum wells with bulk or superlattice barriers
Applied Physics Letters 75, 4(1999) 525-527
Proton irradiation effects on the intersubband transition in GaAs/AlGaAs multiple quantum wells with bulk or superlattice barriers
Applied Physics Letters 75, 4(1999) 525-527
Jagadish C
Scanning ion deep level transient spectroscopy
Nuclear Instruments and Methods in Physics Research: Section B 158, 1(1999) 464-469
Scanning ion deep level transient spectroscopy
Nuclear Instruments and Methods in Physics Research: Section B 158, 1(1999) 464-469
Jagadish C, Fu L
Inter-facet noise correlation measurement as a diagnostic tool for semiconductor laser studies
Griffith Asia Quarterly (1999) 236-239
Inter-facet noise correlation measurement as a diagnostic tool for semiconductor laser studies
Griffith Asia Quarterly (1999) 236-239
Jagadish C, Gal M
Observation of state filling effects in the carrier dynamics of self-assembled quantum dots
Griffith Asia Quarterly (1999) 344-347
Observation of state filling effects in the carrier dynamics of self-assembled quantum dots
Griffith Asia Quarterly (1999) 344-347
Karouta F, Jagadish C, Tan H
High power CW output from low confinement asymmetric structure diode laser
Electronics Letters 35, 2(1999) 148-149
High power CW output from low confinement asymmetric structure diode laser
Electronics Letters 35, 2(1999) 148-149
Lederer M, Luther-Davies B, Tan H, Jagadish C
Ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers
Griffith Asia Quarterly (1999) 105-108
Ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers
Griffith Asia Quarterly (1999) 105-108
Lederer M, Luther-Davies B, Tan H, Jagadish C
Nonlinear optical properties of ion-implanted GaAs
Griffith Asia Quarterly (1999) 151-153
Nonlinear optical properties of ion-implanted GaAs
Griffith Asia Quarterly (1999) 151-153
Lobo C, Jagadish C
Optical properties of self-organized InGaAs/GaAs quantum dots in field-effect structures
Materials Research Society Symposium Proceedings 536(1999) 269-274
Optical properties of self-organized InGaAs/GaAs quantum dots in field-effect structures
Materials Research Society Symposium Proceedings 536(1999) 269-274
Tan H, Jagadish C
Intermixing induced resonance shift in GaAs/Al xO y DBR resonators
Griffith Asia Quarterly (1999) 365-368
Intermixing induced resonance shift in GaAs/Al xO y DBR resonators
Griffith Asia Quarterly (1999) 365-368
Tan H, Jagadish C
Fabrication and characterization of delta-doped In 0.2Ga 0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy
Griffith Asia Quarterly (1999) 140-143
Fabrication and characterization of delta-doped In 0.2Ga 0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy
Griffith Asia Quarterly (1999) 140-143
Tan H, Fu L, Jagadish C
Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence
Griffith Asia Quarterly (1999) 187-190
Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence
Griffith Asia Quarterly (1999) 187-190
Tan H, Jagadish C, Gal M
Comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy
Griffith Asia Quarterly (1999) 348-351
Comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy
Griffith Asia Quarterly (1999) 348-351
Tan H, Yuan S, Jagadish C, Lu W
Application of selective implantation induced intermixing on V-grooved AlGaAs/GaAs coupled quantum wire
Griffith Asia Quarterly (1999) 513-515
Application of selective implantation induced intermixing on V-grooved AlGaAs/GaAs coupled quantum wire
Griffith Asia Quarterly (1999) 513-515
Yuan S, Jagadish C, Zou J
TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wells
Griffith Asia Quarterly (1999) 358-360
TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wells
Griffith Asia Quarterly (1999) 358-360
Yuan S, Tan H, Jagadish C, Lu W, Yuan X
Tuning of detection wavelength of GaAs/AlGaAs quantum-well IR photo-detectors by thermal interdiffusion
Griffith Asia Quarterly (1999) 128-130
Tuning of detection wavelength of GaAs/AlGaAs quantum-well IR photo-detectors by thermal interdiffusion
Griffith Asia Quarterly (1999) 128-130
Dou H, Jagadish C
Effect of anodization of photoluminescence of GaAs/AlGaAs quantum wires
Journal of Environmental Chemical Engineering 19, 1(1998) 72-75
Effect of anodization of photoluminescence of GaAs/AlGaAs quantum wires
Journal of Environmental Chemical Engineering 19, 1(1998) 72-75
Fatima S, Fitzgerald J, Jagadish C, Wong-Leung J
Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ions
Applied Physics Letters 72, 23(1998) 3044-3046
Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ions
Applied Physics Letters 72, 23(1998) 3044-3046
Fu L, Tan H, Jagadish C
Improved carrier collection in intermixed InGaAs/GaAs quantum wells
Applied Physics Letters 73, 23(1998) 3408-3410
Improved carrier collection in intermixed InGaAs/GaAs quantum wells
Applied Physics Letters 73, 23(1998) 3408-3410
Jagadish C
Native defect engineering of interdiffusion using thermally grown oxides of GaAs
Applied Physics Letters 73, 6(1998) 803-805
Native defect engineering of interdiffusion using thermally grown oxides of GaAs
Applied Physics Letters 73, 6(1998) 803-805
Jagadish C, Krotkus A
Urbach tail in InP with nanometer metallic precipitates
Physica Status Solidi (A) Applied Research 168, 2(1998) 475-477
Urbach tail in InP with nanometer metallic precipitates
Physica Status Solidi (A) Applied Research 168, 2(1998) 475-477
Jagadish C, Li G
Si and C d-doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlattices
Materials Science and Engineering B 51, 1-Mar(1998) 103-105
Si and C d-doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlattices
Materials Science and Engineering B 51, 1-Mar(1998) 103-105
Lederer M, Luther-Davies B, Tan H, Jagadish C
An antiresonant Fabry-Perot saturable absorber for passive mode-locking fabricated by metal-organic vapor phase epitaxy and ion implantation design, characterization, and mode-locking
IEEE Journal of Quantum Electronics 34, 11(1998) 2150-2161
An antiresonant Fabry-Perot saturable absorber for passive mode-locking fabricated by metal-organic vapor phase epitaxy and ion implantation design, characterization, and mode-locking
IEEE Journal of Quantum Electronics 34, 11(1998) 2150-2161
Li G, Jagadish C
Electron transfer efficiency of Si d-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum wells
Applied Physics Letters 72, 18(1998) 2322-2324
Electron transfer efficiency of Si d-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum wells
Applied Physics Letters 72, 18(1998) 2322-2324
Li G, Yuan S, Jagadish C
Si and C d-doping for device applications
Journal of Crystal Growth 195, 1-Apr(1998) 54-57
Si and C d-doping for device applications
Journal of Crystal Growth 195, 1-Apr(1998) 54-57
Lobo C, Jagadish C
Electrically modulated photoluminescence in self-organized InGaAs/GaAs quantum dots
Applied Physics Letters 73, 19(1998) 2811-2813
Electrically modulated photoluminescence in self-organized InGaAs/GaAs quantum dots
Applied Physics Letters 73, 19(1998) 2811-2813
Yuan S, Jagadish C, Tan H, Petravic M
Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures
IEEE Journal on Selected Topics in Quantum Electronics 4, 4(1998) 629-634
Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures
IEEE Journal on Selected Topics in Quantum Electronics 4, 4(1998) 629-634
Yuan S, Tan H, Jagadish C
Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells
Journal of Applied Physics 83, 3(1998) 1305-1311
Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells
Journal of Applied Physics 83, 3(1998) 1305-1311
Conference paper
Church S, Patel N, Al-Abri R, Al-Amairi N, Gopakumar Saraswathyvilasam A, Tan H, Jagadish C, Zhang Y, Liu H, Vitale F, Ronning C, Jiang N, Joyce H, Parkinson P
Robust Measurement of Nanowire Laser Performance Across 6 Designs using Experimental Big-Data
IEEE Nanotechnology Materials and Devices Conference (NMDC) (2023) 880
Robust Measurement of Nanowire Laser Performance Across 6 Designs using Experimental Big-Data
IEEE Nanotechnology Materials and Devices Conference (NMDC) (2023) 880
Odeyemo S, Joyce H, Kar S, Lake J, Uswachoke C, Jagadish C, Tan H, Zhang Y, Liu H, Boland J, Damry D, Johnston M
Nanowires in Terahertz Photonics: Harder, Better, Stronger, Faster
2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) (2023)
Nanowires in Terahertz Photonics: Harder, Better, Stronger, Faster
2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) (2023)
Wei S, Li Z, Murugappan K, Li Z, Zhang F, Lysevych M, Tan H, Jagadish C, Tricoli A, Fu L
Self-Powered Room Temperature Nanowire Array NO2 Sensor
IEEE Nanotechnology Materials and Devices Conference (NMDC) (2023) 662-663
Self-Powered Room Temperature Nanowire Array NO2 Sensor
IEEE Nanotechnology Materials and Devices Conference (NMDC) (2023) 662-663
Wong W, Wang N, Jagadish C, Tan H
Directional Lasing in Coupled InP Micro-Ring/Nanowire Systems
IEEE Nanotechnology Materials and Devices Conference (NMDC) (2023) 381-382
Directional Lasing in Coupled InP Micro-Ring/Nanowire Systems
IEEE Nanotechnology Materials and Devices Conference (NMDC) (2023) 381-382
Zangeneh Kamali K, Xu L, Gagrani N, Tan H, Jagadish C, Miroshnichenko A, Neshev D, Rahmani M
Electrical tunning of metasurfaces via transparent conducting oxide micro heaters
META 2023 The 13th International Conference on Metamaterials, Photonic Crystals and Plasmonics (2023) 1607-1608
Electrical tunning of metasurfaces via transparent conducting oxide micro heaters
META 2023 The 13th International Conference on Metamaterials, Photonic Crystals and Plasmonics (2023) 1607-1608
Zangeneh Kamali K, Xu L, Gagrani N, Tan H, Jagadish C, Miroshnichenko A, Neshev D, Rahmani M
Addressable Metasurfaces by Electrically Driven Transparent Conducting Oxide Micro-Heaters
2023 Conference on Lasers and ELectro-Optics Europe (CLEO Europe-EQEC) (2023)
Addressable Metasurfaces by Electrically Driven Transparent Conducting Oxide Micro-Heaters
2023 Conference on Lasers and ELectro-Optics Europe (CLEO Europe-EQEC) (2023)
Zangeneh Kamali K, Xu L, Gagrani N, Tan H, Jagadish C, Miroshnichenko A, Neshev D, Rahmani M
Optical Flash switching via Electrically Controlled Metasurfaces
IEEE Nanotechnology Materials and Devices Conference (NMDC) (2023) 170
Optical Flash switching via Electrically Controlled Metasurfaces
IEEE Nanotechnology Materials and Devices Conference (NMDC) (2023) 170
Joyce H, Adeyemo S, Lake J, Kar S, Burton O, Zhang Y, Liu H, Tan H, Jagadish C, Johnston M, Alexander-Webber J
The Effects of Surfaces and Surface Passivation on the Electrical Properties of Nanowires and Other Nanostructures: Time-Resolved Terahertz Spectroscopy Studies
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) (2022)
The Effects of Surfaces and Surface Passivation on the Electrical Properties of Nanowires and Other Nanostructures: Time-Resolved Terahertz Spectroscopy Studies
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) (2022)
Li Z, Tan H, Jagadish C, Fu L
An Efficient Workflow of Modeling Single-Nanowire Based Single-Photon Avalanche Detectors
International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) (2022) 121-122
An Efficient Workflow of Modeling Single-Nanowire Based Single-Photon Avalanche Detectors
International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) (2022) 121-122
Peng K, Jevtics D, Zhang F, Sterzl S, Damry D, Rothmann M, Guilhabert B, Strain M, Tan H, Herz L, Fu L, Dawson M, Hurtado A, Jagadish C, Johnston M
Polarization-resolved Terahertz Time-domain Spectroscopy Enabled by Nanowire Sensor Technology
Optical Sensors and Sensing Congress 2022 (2022) SM3C.5
Polarization-resolved Terahertz Time-domain Spectroscopy Enabled by Nanowire Sensor Technology
Optical Sensors and Sensing Congress 2022 (2022) SM3C.5
Peng K, Jevtics D, Zhang F, Sterzl S, Damry D, Rothmann M, Guilhabert B, Strain M, Tan H, Herz L, Herz L, Fu L, Dawson M, Hurtado A, Jagadish C, Johnston M, Johnston M
Nanowire Sensors Facilitate Polarization Sensitive Terahertz Spectroscopy
47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) (2022)
Nanowire Sensors Facilitate Polarization Sensitive Terahertz Spectroscopy
47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) (2022)
Raj V, Zhu Y, Vora K, Fu L, Tan H, Jagadish C
Pushing limits of photovoltaics and photodetection using radial junction nanowire devices
2022 IEEE International Conference on Emerging Electronics (ICEE) (2022)
Pushing limits of photovoltaics and photodetection using radial junction nanowire devices
2022 IEEE International Conference on Emerging Electronics (ICEE) (2022)
Wong W, Church S, Jagadish C, Wang N, Parkinson P, Tan H
Selective Area Epitaxy of InP/InAsP Multi-Quantum Well Micro-Ring Lasers
2022 IEEE Photonics Conference (2022)
Selective Area Epitaxy of InP/InAsP Multi-Quantum Well Micro-Ring Lasers
2022 IEEE Photonics Conference (2022)
Aman G, Fränzl M, Lysevych M, Tan H, Jagadish C, Schmitzer H, Cahay M, Wagner H
Lasing from GaAs Nanowires on Fe Films
Frontiers in Optics/Laser Science 2021 (2021)
Lasing from GaAs Nanowires on Fe Films
Frontiers in Optics/Laser Science 2021 (2021)
Peng K, Jevtics D, Zhang F, Sterzl S, Damry D, Rothmann M, Guilhabert B, Strain M, Tan H, Herz L, Fu L, Dawson M, Hurtado A, Jagadish C
Terahertz Full-polarization-state Detection by Nanowires
Conference on Lasers and Electro-Optics Europe (CLEO EUROPE, 2021) (2021) 1-1
Terahertz Full-polarization-state Detection by Nanowires
Conference on Lasers and Electro-Optics Europe (CLEO EUROPE, 2021) (2021) 1-1
Peng K, Jevtics D, Zhang F, Sterzl S, Damry D, Rothmann M, Guilhabert B, Strain M, Tan H, Herz L, Fu L, Dawson M, Hurtado A, Jagadish C
Nanowires: A New Horizon for Polarization-resolved Terahertz Time-domain Spectroscopy
"2021 Conference on Lasers and Electro-Optics (CLEO)" (2021) 1-2
Nanowires: A New Horizon for Polarization-resolved Terahertz Time-domain Spectroscopy
"2021 Conference on Lasers and Electro-Optics (CLEO)" (2021) 1-2
Rashidi Shahgoli M, Haggren T, Su Z, Jagadish C, Mokkapati S, Tan H
Controling the type of lasing modes in disordered media based on GaAs-AlGaAs nanowires
2021 IEEE Photonics Conference (IPC) (2021)
Controling the type of lasing modes in disordered media based on GaAs-AlGaAs nanowires
2021 IEEE Photonics Conference (IPC) (2021)
Zhang F, Zhu Y, Li Z, Li L, Lu Y, Tan H, Lockrey M, Fu L, Jagadish C
High-speed InGaAs/lnP Quantum Well Nanowire Array Light Emitting Diodes at Telecommunication Wavelength
2021 IEEE Photonics Conference (IPC) (2021)
High-speed InGaAs/lnP Quantum Well Nanowire Array Light Emitting Diodes at Telecommunication Wavelength
2021 IEEE Photonics Conference (IPC) (2021)
Parkinson P, Alanis J, Skalsky S, Zhang Y, Liu H, Lysevych M, Tan H, Jagadish C
A needle in a needlestack: exploiting functional inhomogeneity for optimized nanowire lasing
Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII (2020) 1-8
A needle in a needlestack: exploiting functional inhomogeneity for optimized nanowire lasing
Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII (2020) 1-8
Volkovskaya I, Smirnova D, Xu L, Saerens G, Timofeeva M, Lysevych M, Camacho-Morales M, Cai M, Zangeneh Kamali K, Huang L, Karouta F, Tan H, Jagadish C, Miroshnichenko A, Grange R, Neshev D, Rahmani M
Multipolar analysis of second-harmonic generation in GaAs nanoparticles grown along different crystallographic directions
5th International Conference on Metamaterials and Nanophotonics METANANO 2020 (2020)
Multipolar analysis of second-harmonic generation in GaAs nanoparticles grown along different crystallographic directions
5th International Conference on Metamaterials and Nanophotonics METANANO 2020 (2020)
Volkovskaya I, Smirnova D, Xu L, Sautter J, Miroshnichenko A, Lysevych M, Camacho-Morales M, Zangeneh Kamali K, Karouta F, Vora K, Tan H, Kauranen M, Staude I, Jagadish C, Neshev D, Rahmani M
Multipolar analysis of second-harmonic generation in (111) Gallium Arsenide nanoparticles
4th International Conference on Metamaterials and Nanophotonics, METANANO 2019 (2020) 1-4
Multipolar analysis of second-harmonic generation in (111) Gallium Arsenide nanoparticles
4th International Conference on Metamaterials and Nanophotonics, METANANO 2019 (2020) 1-4
Weissflog M, Cai M, Parry M, Rahmani M, Xu L, Fedotova A, Marino G, Lysevych M, Tan H, Jagadish C, Miroshnichenko A, Leo G, Sukhorukov A, Setzpfandt F, Pertsch T, Staude I, Neshev D
Non-Degenerate Nonlinear Frequency Mixing in (110)-Grown GaAs Nanoresonators
Conference on Lasers and Electro-Optics (CLEO 2020) (2020)
Non-Degenerate Nonlinear Frequency Mixing in (110)-Grown GaAs Nanoresonators
Conference on Lasers and Electro-Optics (CLEO 2020) (2020)
Weissflog M, Cai M, Parry M, Rahmani M, Xu L, Fedotova A, Marino G, Lysevych M, Tan H, Jagadish C, Miroshnichenko A, Leo G, Sukhorukov A, Setzpfandt F, Pertsch T, Staude I, Neshev D
Non-Degenerate Sum-Frequency Generation in (110)-Grown GaAs Nanoresonators
2020 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2020 (2020)
Non-Degenerate Sum-Frequency Generation in (110)-Grown GaAs Nanoresonators
2020 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2020 (2020)
Xu L, Saerens G, Timofeeva M, Smirnova D, Volkovskaya I, Lysevych M, Camacho-Morales M, Cai M, Zangeneh Kamali K, Huang L, Karouta F, Tan H, Jagadish C, Miroshnichenko A, Grange R, Neshev D, Rahmani M
Switching Second-Harmonic Forward to Backward Emission via GaAs Nanoantennas
Conference on Lasers and Electro-Optics (CLEO 2020) (2020)
Switching Second-Harmonic Forward to Backward Emission via GaAs Nanoantennas
Conference on Lasers and Electro-Optics (CLEO 2020) (2020)
Aman G, Mohammadi F, Lysevych M, Tan H, Jagadish C, Schmitzer H, Fraenzl M, Cahay M, Wagner H
Hybrid plasmonic lasing from zinc-doped GaAs nanowires up to room temperature
Frontiers in Optics/Laser Science 2019 (2019)
Hybrid plasmonic lasing from zinc-doped GaAs nanowires up to room temperature
Frontiers in Optics/Laser Science 2019 (2019)
Jevtics D, Hurtado A, Guilhabert B, Jankauskas M, Laurand N, Gao Q, Tan H, Jagadish C, Dawson M
Precise Positioning and Orientation of Nanowire Lasers in Regular and Patterned Surfaces
18th International Conference on Nanotechnology, NANO 2018 (2019)
Precise Positioning and Orientation of Nanowire Lasers in Regular and Patterned Surfaces
18th International Conference on Nanotechnology, NANO 2018 (2019)
Joyce H, Uswachoke C, Adeyemo S, Kar S, Damry D, Peng K, Johnston M, Wong-Leung J, Tan H, Jagadish C
Engineering III-V Nanowires for optoelectronics: From visible to terahertz
Novel Optical Materials and Applications, NOMA 2019 Part F135-NOMA 2019(2019) 1-2
Engineering III-V Nanowires for optoelectronics: From visible to terahertz
Novel Optical Materials and Applications, NOMA 2019 Part F135-NOMA 2019(2019) 1-2
Li Z, Tan H, Jagadish C, Fu L
III-V Semiconductor Nanowires for Optoelectronic Applications
META 2019: 10th International Conference on Metamaterials, Photonic Crystals and Plasmonics (2019) 404-405
III-V Semiconductor Nanowires for Optoelectronic Applications
META 2019: 10th International Conference on Metamaterials, Photonic Crystals and Plasmonics (2019) 404-405
Raj V, Lockrey M, Liu R, Tan H, Jagadish C
CuI-TiO Composite Thin Film for Flexible Electronic Applications
2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018 (2019) 22-23
CuI-TiO Composite Thin Film for Flexible Electronic Applications
2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018 (2019) 22-23
Ren F, Xu W, Ye J, Yang Y, Tan H, Jagadish C
Vertical Lasing from InP Nanowire with Cat?s Eye Antenna
META 2019: 10th International Conference on Metamaterials, Photonic Crystals and Plasmonics (2019) 252-253
Vertical Lasing from InP Nanowire with Cat?s Eye Antenna
META 2019: 10th International Conference on Metamaterials, Photonic Crystals and Plasmonics (2019) 252-253
Sautter J, Xu L, Miroshnichenko A, Lysevych M, Smirnova D, Volkovskaya I, Camacho-Morales M, Zangeneh Kamali K, Karouta F, Vora K, Tan H, Kauranen M, Staude I, Jagadish C, Neshev D, Rahmani M
Second-harmonic generation in (111) gallium arsenide nanoantennas
2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 (2019)
Second-harmonic generation in (111) gallium arsenide nanoantennas
2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 (2019)
Sautter J, Xu L, Miroshnichenko A, Lysevych M, Volkovskaya I, Smirnova D, Camacho-Morales M, Zangeneh Kamali K, Karouta F, Vora K, Tan H, Kauranen M, Staude I, Jagadish C, Neshev D, Rahmani M
Tailoring directional scattering of second-harmonic generation from (111)-GaAs nanoantennas
AOS Australian Conference on Optical Fibre Technology (ACOFT) and Australian Conference on Optics, Lasers, and Spectroscopy (ACOLS) 2019 11200(2019)
Tailoring directional scattering of second-harmonic generation from (111)-GaAs nanoantennas
AOS Australian Conference on Optical Fibre Technology (ACOFT) and Australian Conference on Optics, Lasers, and Spectroscopy (ACOLS) 2019 11200(2019)
Boland J, Peng K, Baig S, Damry D, Parkinson P, Fu L, Tan H, Jagadish C, Herz L, Joyce H, Johnston M
The Route to Nanoscale Terahertz Technology: Nanowire-based Terahertz Detectors and Terahertz Modulators
43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018) 2018-September(2018) 2
The Route to Nanoscale Terahertz Technology: Nanowire-based Terahertz Detectors and Terahertz Modulators
43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018) 2018-September(2018) 2
Camacho-Morales M, Bautista G, Zang X, Xu L, Turquet L, Miroshnichenko A, Tan H, Lamprianidis A, Rahmani M, Jagadish C, Neshev D, Kauranen M
Resonant harmonic generation in AlGaAs nanoantennas using structured light
Nonlinear Photonics, NP 2018 (2018)
Resonant harmonic generation in AlGaAs nanoantennas using structured light
Nonlinear Photonics, NP 2018 (2018)
Joyce H, Alexander-Webber J, Peng K, Johnston M, Parkinson P, Tan H, Jagadish C
Engineering semiconductor nanowires for photodetection: From visible to terahertz
Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2018 (2018)
Engineering semiconductor nanowires for photodetection: From visible to terahertz
Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2018 (2018)
Joyce H, Eyre L, Adeyemo S, Baig S, Boland J, Davies C, Johnston M, Deschler F, Tan H, Jagadish C
Probing the photophysics of semiconductor nanomaterials using optical pump-terahertz probe spectroscopy: From nanowires to perovskites
Physical Chemistry of Semiconductor Materials and Interfaces XVII 2018 (2018)
Probing the photophysics of semiconductor nanomaterials using optical pump-terahertz probe spectroscopy: From nanowires to perovskites
Physical Chemistry of Semiconductor Materials and Interfaces XVII 2018 (2018)
Joyce H, Uswachoke C, Baig S, Adeyemo S, Boland J, Damry D, Davies C, Wong-Leung J, Tan H, Jagadish C, Herz L, Johnston M
Engineering III-V nanowires for optoelectronics: From epitaxy to terahertz photonics
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV 2018 (2018)
Engineering III-V nanowires for optoelectronics: From epitaxy to terahertz photonics
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV 2018 (2018)
Li Z, Trendafilov S, Allen M, Allen J, Alabadla A, Gao Q, Yuan X, Yang I, Caroff-Gaonac'h P, Tan H, Jagadish C, Fu L
Room temperature GaAsSb array photodetectors
1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018 (2018) 143-145
Room temperature GaAsSb array photodetectors
1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018 (2018) 143-145
Mohammadi F, Lysevych M, Tan H, Jagadish C, Fraenzl M, Wagner H
Hybrid-plasmonic gold coated GaAs nanowire lasers
2018 Conference on Lasers and Electro-Optics, CLEO 2018 (2018)
Hybrid-plasmonic gold coated GaAs nanowire lasers
2018 Conference on Lasers and Electro-Optics, CLEO 2018 (2018)
Raj V, Lockrey M, Liu R, Tan H, Jagadish C
CuI-TiO2 Composite Thin Film for Flexible Electronic Applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2018) 0, 0(2018) 22-23
CuI-TiO2 Composite Thin Film for Flexible Electronic Applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2018) 0, 0(2018) 22-23
Mohammadi F, Lysevych M, Tan H, Jagadish C, Wagner H
Metal-enhanced lasing from zinc-doped GaAs nanowires
Frontiers in Optics, FiO 2017 (2017)
Metal-enhanced lasing from zinc-doped GaAs nanowires
Frontiers in Optics, FiO 2017 (2017)
Peng K, Parkinson P, Gao Q, Boland J, Li Z, Wang F, Wenas Y, Davies C, Fu L, Johnston M, Tan H, Jagadish C
Broadband single-nanowire photoconductive terahertz detectors
CLEO: Science and Innovations, CLEO_SI 2017 (2017) 2
Broadband single-nanowire photoconductive terahertz detectors
CLEO: Science and Innovations, CLEO_SI 2017 (2017) 2
Camacho-Morales M, Rahmani M, Kruk S, Wang L, Xu L, Miroshnichenko A, Smirnova D, Tan H, Karouta F, Naureen S, Vora K, Solntsev A, Carletti L, De Angelis C, Jagadish C, Kivshar Y, Neshev D
Shaping the radiation pattern of second-harmonic generation from AlGaAs nonlinear nanoantennas
Bragg Gratings, Photosensitivity, and Poling in Glass Waveguides, BGPP 2016 (2016)
Shaping the radiation pattern of second-harmonic generation from AlGaAs nonlinear nanoantennas
Bragg Gratings, Photosensitivity, and Poling in Glass Waveguides, BGPP 2016 (2016)
Camacho-Morales M, Rahmani M, Kruk S, Wang L, Xu L, Miroshnichenko A, Smirnova D, Tan H, Karouta F, Naureen S, Vora K, Solntsev A, Carletti L, De Angelis C, Jagadish C, Kivshar Y, Neshev D
"Shaping the radiation pattern of second-harmonicgeneration from AlGaAs nonlinear nanoantennas"
Nonlinear Photonics 2016 (2016) 2
"Shaping the radiation pattern of second-harmonicgeneration from AlGaAs nonlinear nanoantennas"
Nonlinear Photonics 2016 (2016) 2
Wagner H, Kaveh M, Mohammadi F, Schmitzer H, Gao Q, Jagadish C, Kunert G
Exciton Emission from Plasmonic-organic-III-V-semiconductor Nanowires and Nanorods
2016 Progress In Electromagnetic Research Symposium (PIERS) (2016) 1847-1847
Exciton Emission from Plasmonic-organic-III-V-semiconductor Nanowires and Nanorods
2016 Progress In Electromagnetic Research Symposium (PIERS) (2016) 1847-1847
Badada B, Shi T, Jackson H, Smith L, Gao Q, Tan H, Jagadish C
Photocurrent spectroscopy of single GaAs/AlGaAs core-multishell nanowire devices
Annual Device Research Conference, DRC 2015 (2015) 81-82
Photocurrent spectroscopy of single GaAs/AlGaAs core-multishell nanowire devices
Annual Device Research Conference, DRC 2015 (2015) 81-82
Peng K, Parkinson P, Fu L, Gao Q, Jiang N, Guo Y, Wang F, Joyce H, Boland J, Tan H, Jagadish C, Johnston M
Single nanowire terahertz detectors
CLEO: Science and Innovations, CLEO_SI 2015 15, 1(2015) 206-210
Single nanowire terahertz detectors
CLEO: Science and Innovations, CLEO_SI 2015 15, 1(2015) 206-210
Ren F, Xu W, Lu H, Ye J, Tan H, Jagadish C
Dynamic control of THz waves through thin-film transistor metamaterials
SPIE Micro+Nano Materials, Devices, and Applications Symposium 2015 (2015)
Dynamic control of THz waves through thin-film transistor metamaterials
SPIE Micro+Nano Materials, Devices, and Applications Symposium 2015 (2015)
Zhong Z, Li Z, Fu L, Gao Q, Li Z, Peng K, Li L, Zhang G, Wang Z, Tan H, Jagadish C
InP single nanowire solar cells
Light, Energy and the Environment 2015 (2015)
InP single nanowire solar cells
Light, Energy and the Environment 2015 (2015)
Carrad D, Burke A, Svensson S, Lyttleton R, Joyce H, Tan H, Jagadish C, Storm K, Samuelson L, Linke H, Micolich A
Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 286-289
Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 286-289
Decker M, Kruk S, Staude I, Jagadish C, Neshev D, Kivshar Y
Manipulation of Quantum-Dot Emission by Multipolar Magnetic Metamaterials
The 5th International Conference on Metamaterials, Photonic Crystals and Plasmonics META'14 (2014)
Manipulation of Quantum-Dot Emission by Multipolar Magnetic Metamaterials
The 5th International Conference on Metamaterials, Photonic Crystals and Plasmonics META'14 (2014)
Fonseka H, Caroff-Gaonac'h P, Guo Y, Wang F, Wong-Leung J, Tan H, Jagadish C
InP-Based Radial Heterostructures Grown on [100] Nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 168-170
InP-Based Radial Heterostructures Grown on [100] Nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 168-170
Gao Q, Fu L, Wang F, Guo Y, Li Z, Peng K, Li L, Li Z, Wenas Y, Mokkapati S, Tan H, Jagadish C
Selective area epitaxial growth of InP nanowire array for solar cell applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 252-253
Selective area epitaxial growth of InP nanowire array for solar cell applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 252-253
Jiang N, Wong-Leung J, Gao Q, Tan H, Jagadish C
Sidewall evolution in VLS grown GaAs Nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 87-89
Sidewall evolution in VLS grown GaAs Nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 87-89
Lysevych M, Tan H, Karouta F, Jagadish C
Positioning of the active region in broad-waveguide laser for optimized hole injection
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 41-43
Positioning of the active region in broad-waveguide laser for optimized hole injection
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 41-43
Mokkapati S, Jiang N, Saxena D, Tan H, Jagadish C
High quantum efficiency (Al) GaAs nanowires for optoelectronic devices
2014 Summer Topicals Meeting Series, SUM 2014 (2014) 13-14
High quantum efficiency (Al) GaAs nanowires for optoelectronic devices
2014 Summer Topicals Meeting Series, SUM 2014 (2014) 13-14
Mokkapati S, Saxena D, Jiang N, Gao Q, Tan H, Jagadish C
III-V semiconductor nanowire lasers
2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 (2014) 217-218
III-V semiconductor nanowire lasers
2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 (2014) 217-218
Mokkapati S, Saxena D, Jiang N, Tan H, Jagadish C
Plasmonic cavities for increasing the radiative efficiency of GaAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 244-245
Plasmonic cavities for increasing the radiative efficiency of GaAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 244-245
Narangari P, Naureen S, Wang F, Vora K, Shahid N, Karouta F, Tan H, Jagadish C
Fabrication and Photoluminescence Studies of GaN Nanopillars
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 133-136
Fabrication and Photoluminescence Studies of GaN Nanopillars
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 133-136
Naureen S, Shahid N, Vora K, Lysevych M, Tan H, Jagadish C, Karouta F
Top-down approach for fabricating InP nanowires with Ohmic metal contacts
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 3-6
Top-down approach for fabricating InP nanowires with Ohmic metal contacts
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 3-6
Paiman S, Gao Q, Joyce H, Tan H, Jagadish C, Kim Y, Guo Y, Pemasiri K, Montazeri M, Jackson H, Smith L
MOCVD-grown indium phosphide nanowires for optoelectronics
2013 International Conference on Nanoscience and Nanotechnology, NANO-SciTech 2013 832(2014) 201-205
MOCVD-grown indium phosphide nanowires for optoelectronics
2013 International Conference on Nanoscience and Nanotechnology, NANO-SciTech 2013 832(2014) 201-205
Peng K, Parkinson P, Fu L, Gao Q, Jiang N, Guo Y, Wang F, Joyce H, Boland J, Johnston M, Tan H, Jagadish C
Single GaAs/AlGaAs Nanowire Photoconductive Terahertz Detectors
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 221-222
Single GaAs/AlGaAs Nanowire Photoconductive Terahertz Detectors
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 221-222
Ren F, Lu H, Tan H, Jagadish C
Broad-linewidth and high-efficiency second harmonic generation in cascaded photonic crystals
The 5th International Conference on Metamaterials, Photonic Crystals and Plasmonics META'14 (2014)
Broad-linewidth and high-efficiency second harmonic generation in cascaded photonic crystals
The 5th International Conference on Metamaterials, Photonic Crystals and Plasmonics META'14 (2014)
Toe W, Ortega-Piwonka I, Andres-Arroyo A, Gao Q, Tan H, Jagadish C, Henry B, Angstmann C, Reece P
Anomalous dynamic behaviour of optically trapped high aspect ratio nanowires
Optical Trapping and Optical Micromanipulation XI (2014) 91641L 6
Anomalous dynamic behaviour of optically trapped high aspect ratio nanowires
Optical Trapping and Optical Micromanipulation XI (2014) 91641L 6
Ullah A, Joyce H, Burke A, Wong-Leung J, Tan H, Jagadish C, Micolich A
How InAs Crystal Phase affects the Electrical Performance of InAs Nanowire FETs
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 283-285
How InAs Crystal Phase affects the Electrical Performance of InAs Nanowire FETs
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 283-285
Wagner H, Wickremasighe N, Kaveh M, Ajward M, Wang X, Schmitzer H, Gao Q, Jagadish C
Optical properties of Alq3 films and Alq3/plasmonic heterostructures
Light Manipulating Organic Materials and Devices (2014)
Optical properties of Alq3 films and Alq3/plasmonic heterostructures
Light Manipulating Organic Materials and Devices (2014)
Wang F, Gao Q, Peng K, Guo Y, Li Z, Fu L, Smith L, Tan H, Jagadish C
Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 272-274
Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 272-274
Wenas Y, Mokkapati S, Tan H, Jagadish C
Extremely High Short-Circuit Current Density in Vertical Single Nanowire Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 77-78
Extremely High Short-Circuit Current Density in Vertical Single Nanowire Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 77-78
Xu H, Gao Q, Tan H, Jagadish C, Zou J
Palladium catalyzed defect-free <110> zinc-blende structured InAs nanowires
2013 MRS Spring Meeting (2014) 95-99
Palladium catalyzed defect-free <110> zinc-blende structured InAs nanowires
2013 MRS Spring Meeting (2014) 95-99
Ye J, Zhen K, Gu S, Wang F, Tan H, Jagadish C
Formation of Intermediate Band in ZnTe: O Highly Mismatched Alloy Synthesized by Ion Implantation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 259-261
Formation of Intermediate Band in ZnTe: O Highly Mismatched Alloy Synthesized by Ion Implantation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) (2014) 259-261
Gao Q, Jiang N, Joyce H, Paiman S, Wong-Leung J, Lee Y, Fu L, Tan H, Jagadish C
Compound semiconductor nanowires for optoelectronic devices
10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 (2013) 1-2
Compound semiconductor nanowires for optoelectronic devices
10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 (2013) 1-2
Jiang N, Gao Q, Parkinson P, Wong-Leung J, Tan H, Jagadish C
High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
2013 26th IEEE Photonics Conference, IPC 2013 (2013) 476-477
High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
2013 26th IEEE Photonics Conference, IPC 2013 (2013) 476-477
Joyce H, Docherty C, Yong C, Wong-Leung J, Gao Q, Paiman S, Tan H, Jagadish C, Lloyd-Hughes J, Herz L, Johnston M
Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 (2013) 1-2
Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 (2013) 1-2
Joyce H, Docherty C, Yong C, Wong-Leung J, Gao Q, Paiman S, Tan H, Jagadish C, Lloyd-Hughes J, Herz L, Johnston M
Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy
SPIE Micro+Nano Materials, Devices, and Applications 2013 Conference 8923(2013) 1-6
Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy
SPIE Micro+Nano Materials, Devices, and Applications 2013 Conference 8923(2013) 1-6
Lei W, Tan H, Jagadish C
Engineering the morphology and optical properties of InP-based InAsSb/InGaAs nanostructures via Sb exposure and graded growth techniques
2012 MRS Fall Meeting 1509(2013) 92-97
Engineering the morphology and optical properties of InP-based InAsSb/InGaAs nanostructures via Sb exposure and graded growth techniques
2012 MRS Fall Meeting 1509(2013) 92-97
Little D, Kuruwita R, Gao Q, Joyce A, Burgess T, Jagadish C, Kane D
Nanoparticle Measurement in the Optical Far-Field
Conference on Lasers and Electro-Optics-Int Quantum Electronics Conference CLEO_Europe_IQEC 2013 (2013) 1
Nanoparticle Measurement in the Optical Far-Field
Conference on Lasers and Electro-Optics-Int Quantum Electronics Conference CLEO_Europe_IQEC 2013 (2013) 1
Mokkapati S, Saxena D, Jiang N, Gao Q, Tan H, Jagadish C
Multi-colour emission from GaAs core-AlGaAs shell photonic nanowires
2013 26th IEEE Photonics Conference, IPC 2013 (2013) 153-154
Multi-colour emission from GaAs core-AlGaAs shell photonic nanowires
2013 26th IEEE Photonics Conference, IPC 2013 (2013) 153-154
Montazeri M, Jackson H, Smith L, Yarrison-Rice J, Kang J, Gao Q, Tan H, Jagadish C
Transient Rayleigh scattering from single semiconductor nanowires
International Conference on the Physics of Semiconductors ICPS 2012 (2013) 425-426
Transient Rayleigh scattering from single semiconductor nanowires
International Conference on the Physics of Semiconductors ICPS 2012 (2013) 425-426
Pemasiri K, Perera S, Wang Y, Montazeri M, Jackson H, Smith L, Yarrison-Rice J, Gao Q, Tan H, Jagadish C
Determining wurtzite band structure using optical spectroscopies on single InP nanowires
International Conference on the Physics of Semiconductors ICPS 2012 (2013) 476-477
Determining wurtzite band structure using optical spectroscopies on single InP nanowires
International Conference on the Physics of Semiconductors ICPS 2012 (2013) 476-477
Pemasiri K, Perera S, Wang Y, Montazeri M, Jackson H, Smith L, Yarrison-Rice J, Gao Q, Tan H, Jagadish C
Determining wurtzite band structure using optical spectroscopies on single InP nanowires
International Conference on the Physics of Semiconductors ICPS 2012 (2013) 476-477
Determining wurtzite band structure using optical spectroscopies on single InP nanowires
International Conference on the Physics of Semiconductors ICPS 2012 (2013) 476-477
Reece P, Wang F, Toe W, Andres-Arroyo A, Gao Q, Tan H, Jagadish C
Using Spectroscopic Techniques to Interrogate Trapping Dynamics of Nanoscale Objects
Optical Trapping Applications, OTA 2013 (2013) 1
Using Spectroscopic Techniques to Interrogate Trapping Dynamics of Nanoscale Objects
Optical Trapping Applications, OTA 2013 (2013) 1
Reece P, Wang F, Toe W, Andres-Arroyo A, Gao Q, Tan H, Jagadish C
Using Spectroscopic Techniques to Interrogate Trapping Dynamics of Nanoscale Objects
Optical Trapping Applications, OTA 2013 (2013)
Using Spectroscopic Techniques to Interrogate Trapping Dynamics of Nanoscale Objects
Optical Trapping Applications, OTA 2013 (2013)
Shi T, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J, Gao Q, Tan H, Jagadish C, Etheridge J, Wong B
Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes
International Conference on the Physics of Semiconductors ICPS 2012 (2013) 516-517
Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes
International Conference on the Physics of Semiconductors ICPS 2012 (2013) 516-517
Tan H, Jiang N, Saxena D, Lee Y, Mokkapati S, Fu L, Gao Q, Joyce H, Jagadish C
III-V nanowires for optoelectronic applications
International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting 58, 7(2013) 93-98
III-V nanowires for optoelectronic applications
International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting 58, 7(2013) 93-98
Vora K, Karouta F, Jagadish C
Nanostencil Lithography for fabrication of III-V nanostructures
Nanoengineering: Fabrication, Properties, Optics, and Devices X 8816(2013) 1-7
Nanostencil Lithography for fabrication of III-V nanostructures
Nanoengineering: Fabrication, Properties, Optics, and Devices X 8816(2013) 1-7
Ameruddin A, Tan H, Fonseka H, Gao Q, Wong-Leung J, Parkinson P, Breuer S, Jagadish C
Influence of growth temperature and V/III ratio on Au-assisted InxGa1-xAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 37-38
Influence of growth temperature and V/III ratio on Au-assisted InxGa1-xAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 37-38
Breuer S, Karouta F, Tan H, Jagadish C
MOCVD growth of GaAs nanowires using Ga droplets
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 39-40
MOCVD growth of GaAs nanowires using Ga droplets
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 39-40
Burgess T, Du S, Gault B, Gao Q, Tan H, Zheng R, Jagadish C
Quantification of the zinc dopant concentration in GaAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 41-42
Quantification of the zinc dopant concentration in GaAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 41-42
Chan K, Ye J, Parkinson P, Monakhov E, Johansen K, Vines L, Svensson B, Jagadish C, Wong-Leung J
Structural and Optical properties of H implanted ZnO
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 219-220
Structural and Optical properties of H implanted ZnO
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 219-220
Decker M, Kremers C, Minovich A, Miroshnichenko A, Tan H, Chigrin D, Neshev D, Jagadish C, Kivshar Y
Tuning magnetic metamaterials with liquid crystals
Australian Institute of Physics Congress (AIP 2012) (2012) 1
Tuning magnetic metamaterials with liquid crystals
Australian Institute of Physics Congress (AIP 2012) (2012) 1
Decker M, Minovich A, Kremers C, Miroshnichenko A, Tan H, Chigrin D, Neshev D, Jagadish C, Kivshar Y
Liquid crystal infiltrated optical magnetic metamaterials
International Congress on Advanced Electromagnetic Materials in Microwaves and Optics 2012 (2012) 813-815
Liquid crystal infiltrated optical magnetic metamaterials
International Congress on Advanced Electromagnetic Materials in Microwaves and Optics 2012 (2012) 813-815
Decker M, Staude I, Shishkin I, Samusev K, Parkinson P, Sreenivasan V, Minovich A, Miroshnichenko A, Zvyagin A, Jagadish C, Neshev D, Kivshar Y
Photoluminescence enhancement in magnetic quantum-dot metamaterials
Australian Institute of Physics Congress (AIP 2012) (2012) 1
Photoluminescence enhancement in magnetic quantum-dot metamaterials
Australian Institute of Physics Congress (AIP 2012) (2012) 1
Fonseka H, Tan H, Kang J, Paiman S, Gao Q, Parkinson P, Jagadish C
Growth of InP Nanowires on Silicon Using a Thin Buffer Layer
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 43-44
Growth of InP Nanowires on Silicon Using a Thin Buffer Layer
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 43-44
Gao Q, Tan H, Fu L, Parkinson P, Breuer S, Wong-Leung J, Jagadish C
InP Nanowires Grown by SA-MOVPE
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 45-46
InP Nanowires Grown by SA-MOVPE
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 45-46
Guo Y, Zou J, Burgess T, Gao Q, Tan H, Jagadish C
Shell formation in InGaAs Nanowires Driven by Lattice Latching and Polarity Effect
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 51-52
Shell formation in InGaAs Nanowires Driven by Lattice Latching and Polarity Effect
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 51-52
Hall C, Richards G, Tollerud J, Tan H, Jagadish C, Koike K, Sasa S, Inoue M, Yano M, Davis J
Diffusion and Population Dynamics of Excitons in c-axis grown ZnO Quantum Wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 59-60
Diffusion and Population Dynamics of Excitons in c-axis grown ZnO Quantum Wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 59-60
Helgert C, Decker M, Kruk S, Pertsch T, Jagadish C, Neshev D, Kivshar Y
Magnetic quasi-crystal metamaterials
Australian Institute of Physics Congress (AIP 2012) (2012) 1
Magnetic quasi-crystal metamaterials
Australian Institute of Physics Congress (AIP 2012) (2012) 1
Jiang N, Parkinson P, Gao Q, Wong-Leung J, Breuer S, Tan H, Jagadish C
Improvement of Minority Carrier Lifetime in GaAs/AlxGal1-xAs Core-Shell Nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 33-34
Improvement of Minority Carrier Lifetime in GaAs/AlxGal1-xAs Core-Shell Nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 33-34
Kruk S, Helgert C, Decker M, Staude I, Etrich C, Menzel C, Rockstuhl C, Jagadish C, Pertsch T, Neshev D, Kivshar Y
Quasicrystal metamaterials: A route to optical isotropy
2012 Asia Communications and Photonics Conference, ACP 2012 (2012) 1-2
Quasicrystal metamaterials: A route to optical isotropy
2012 Asia Communications and Photonics Conference, ACP 2012 (2012) 1-2
Kruk S, Helgert C, Decker M, Staude I, Etrich C, Menzel C, Rockstuhl C, Jagadish C, Pertsch T, Neshev D, Kivshar Y
Quasicrystalline metamaterials
Frontiers in Optics 2012 (2012) 1-2
Quasicrystalline metamaterials
Frontiers in Optics 2012 (2012) 1-2
Kruk S, Minovich A, Farnell J, McKerracher I, Karouta F, Tian J, Powell D, Shadrivov I, Tan H, Jagadish C, Neshev D, Kivshar Y
Tunable and nonlinear fishnet metamaterials based on liquid crystal infiltration
Metamaterials: Fundamentals and Applications V 8455(2012) 1-10
Tunable and nonlinear fishnet metamaterials based on liquid crystal infiltration
Metamaterials: Fundamentals and Applications V 8455(2012) 1-10
Lee Y, Li Z, Fu L, Parkinson P, Vora K, Tan H, Jagadish C
Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 131-132
Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 131-132
Lei W, Parkinson P, Tan H, Jagadish C
Drop epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 53-54
Drop epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 53-54
Li Z, Hattori H, Karouta F, Tian J, Parkinson P, Fu L, Tan H, Jagadish C
Coupling of light from microdisk lasters to nano-antennas with nano-tapers
IEEE Photonics Conference (IPC 2012) (2012) 889-890
Coupling of light from microdisk lasters to nano-antennas with nano-tapers
IEEE Photonics Conference (IPC 2012) (2012) 889-890
Lu H, Fu L, Jolley G, Tan H, Jagadish C
Improved performance of InGaAs/GaAs Quantum Dot Solar Cells using Si-modulation doping
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 127-128
Improved performance of InGaAs/GaAs Quantum Dot Solar Cells using Si-modulation doping
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 127-128
Lysevych M, Tan H, Karouta F, Fu L, Jagadish C
Reduction of Gain-Saturation in Merged Beam Lasers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 189-190
Reduction of Gain-Saturation in Merged Beam Lasers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 189-190
Maksymov I, Staude I, Miroshnichenko A, Decker M, Tan H, Neshev D, Jagadish C, Kivshar Y
Arrayed nanoantennas for efficient broadband unidirectional emission enhancement
Conference on Lasers and Electro-Optics (CLEO 2012) (2012) 1-2
Arrayed nanoantennas for efficient broadband unidirectional emission enhancement
Conference on Lasers and Electro-Optics (CLEO 2012) (2012) 1-2
Minovich A, Farnell J, Neshev D, McKerracher I, Karouta F, Tian J, Powell D, Shadrivov I, Tan H, Jagadish C, Kivshar Y
Nonlinear fishnet metamaterials based on liquid crystal infiltration
Conference on Lasers and Electro-Optics (CLEO 2012) (2012) 1-2
Nonlinear fishnet metamaterials based on liquid crystal infiltration
Conference on Lasers and Electro-Optics (CLEO 2012) (2012) 1-2
Minovich A, Farnell J, Neshev D, McKerracher I, Karouta F, Tian J, Powell D, Shadrivov I, Tan H, Jagadish C, Kivshar Y
Nonlinear effects in liquid-crystal-infiltrated fishnet metamaterials
International Congress on Advanced Electromagnetic Materials in Microwaves and Optics 2012 (2012) 828-830
Nonlinear effects in liquid-crystal-infiltrated fishnet metamaterials
International Congress on Advanced Electromagnetic Materials in Microwaves and Optics 2012 (2012) 828-830
Mokkapati S, Lu H, Turner S, Fu L, Tan H, Jagadish C
Plasmonics for III-V semiconductor solar cells
IEEE Photonics Conference (IPC 2012) (2012) 56-57
Plasmonics for III-V semiconductor solar cells
IEEE Photonics Conference (IPC 2012) (2012) 56-57
Mokkapati S, Saxena D, Gao Q, Tan H, Jagadish C
Effect of plasmonic nanoparticles on the quantum efficiency of lll-V semiconductor nanorwire emitters
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 47-48
Effect of plasmonic nanoparticles on the quantum efficiency of lll-V semiconductor nanorwire emitters
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 47-48
Montazeri M, Wade A, Fickenscher M, Jackson H, Smith L, Yarrison-Rice J, Gao Q, Tan H, Jagadish C
Photomodulated Rayleigh scattering from single semiconductor nanowires
Materials Research Society Fall Meeting 2011 1408(2012) 11-16
Photomodulated Rayleigh scattering from single semiconductor nanowires
Materials Research Society Fall Meeting 2011 1408(2012) 11-16
Parkinson P, Peng K, Jiang N, Gao Q, Tan H, Jagadish C
Non-linear direct-write lithography for semiconductor nanowire characterisation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 135-136
Non-linear direct-write lithography for semiconductor nanowire characterisation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 135-136
Parkinson P, Wang H, Gao Q, Tan H, Jagadish C
Picosecond carrier lifetime measurements on a single GaAs nanowire
Conference on Lasers and Electro-Optics (CLEO 2012) (2012)
Picosecond carrier lifetime measurements on a single GaAs nanowire
Conference on Lasers and Electro-Optics (CLEO 2012) (2012)
Sajewicz P, Fu L, Tan H, Vora K, Jagadish C
Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 137-138
Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 137-138
Saxena D, Mokkapati S, Tan H, Jagadish C
Designing single GaAs nanowire lasers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 101-102
Designing single GaAs nanowire lasers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 101-102
Smith L, Jackson H, Yarrison-Rice J, Jagadish C
Measuring the Energy Landscape in Single Semiconductor Nanowires
WELCOME Scientific Meeting on Hybrid Nanostructures 122, 2(2012) 316-320
Measuring the Energy Landscape in Single Semiconductor Nanowires
WELCOME Scientific Meeting on Hybrid Nanostructures 122, 2(2012) 316-320
Song Y, Zhang P, Tian J, Zhang Z, Tan H, Jagadish C
High repetition frequency mode-locked semiconductor disk laser
International Conference on Data Communication Networking, International Conference on e-Business and International Conference on Optical Communication Systems 2012 (2012) 361-364
High repetition frequency mode-locked semiconductor disk laser
International Conference on Data Communication Networking, International Conference on e-Business and International Conference on Optical Communication Systems 2012 (2012) 361-364
Staude I, Decker M, Ventura M, Jagadish C, Neshev D, Gu M, Kivshar Y
A novel hybrid fabrication approach for three-dimensional photonic nanostructures
Australian Institute of Physics Congress (AIP 2012) (2012) 1
A novel hybrid fabrication approach for three-dimensional photonic nanostructures
Australian Institute of Physics Congress (AIP 2012) (2012) 1
Staude I, Maksymov I, Decker M, Miroshnichenko A, Neshev D, Jagadish C, Kivshar Y
Broadband unidirectional Yagi-Uda nanoatennas
Australian Institute of Physics Congress (AIP 2012) (2012) 1
Broadband unidirectional Yagi-Uda nanoatennas
Australian Institute of Physics Congress (AIP 2012) (2012) 1
Staude I, Maksymov I, Decker M, Miroshnichenko A, Neshev D, Jagadish C, Kivshar Y
Tapered nanoantennas for efficient broadband unidirectional emission enhancement
International Congress on Advanced Electromagnetic Materials in Microwaves and Optics 2012 (2012) 743-745
Tapered nanoantennas for efficient broadband unidirectional emission enhancement
International Congress on Advanced Electromagnetic Materials in Microwaves and Optics 2012 (2012) 743-745
Staude I, Maksymov I, Decker M, Miroshnichenko A, Neshev D, Jagadish C, Kivshar Y
Tapered Yagi-Uda nanoantennas for broadband unidirectional emission
Materials Research Society Meeting Fall 2012 (2012)
Tapered Yagi-Uda nanoantennas for broadband unidirectional emission
Materials Research Society Meeting Fall 2012 (2012)
Sun W, Guo Y, Xu H, Liao Z, Zou J, Gao Q, Tan H, Jagadish C
Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 147-148
Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 147-148
Tan H, Jiang N, Lee Y, Saxena D, Parkinson P, Gao Q, Fu L, Jagadish C
III-V nanowires for optoelectronic applications
5th International Conference on Computers and Devices for Communication, CODEC 2012 (2012) 1-3
III-V nanowires for optoelectronic applications
5th International Conference on Computers and Devices for Communication, CODEC 2012 (2012) 1-3
Tollerud J, Richards G, Tan H, Jagadish C, Davis J
Demonstration of a stable and flexible coherent multidimensional spectroscopy apparatus to study coherent coupling in asymmetric double quantum wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 151-152
Demonstration of a stable and flexible coherent multidimensional spectroscopy apparatus to study coherent coupling in asymmetric double quantum wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 151-152
Turner S, Mokkapati S, Jolley G, Fu L, Tan H, Jagadish C
Dielectric Diffraction Gratings for Light-Trapping in InGaAs-GaAs Quantum Well Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 129-130
Dielectric Diffraction Gratings for Light-Trapping in InGaAs-GaAs Quantum Well Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 129-130
Vines L, Neuvonen P, Kuznetsov A, Wong-Leung J, Jagadish C, Svensson B
Anomalous diffusion of intrinsic defects in K+ implanted ZnO using Li as tracer
Materials Research Society Fall Meeting 2011 1394(2012) 75-80
Anomalous diffusion of intrinsic defects in K+ implanted ZnO using Li as tracer
Materials Research Society Fall Meeting 2011 1394(2012) 75-80
Wang F, Lee W, Toe W, Gao Q, Tan H, Jagadish C, Reece P
PL Mapping and Optimized Optical Trapping of Nanowires SLM beam shaping
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 29-30
PL Mapping and Optimized Optical Trapping of Nanowires SLM beam shaping
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 29-30
Wang F, Lee W, Toe W, Gao Q, Tan H, Jagadish C, Reece P
PL Mapping and Optimized Optical Trapping of Nanowires SLM beam shaping
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 29-30
PL Mapping and Optimized Optical Trapping of Nanowires SLM beam shaping
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 29-30
Wang F, Toe W, Hartstone A, Ming Lee W, McGloin D, Gao Q, Tan H, Jagadish C, Reece P
Mapping optical process in semiconductor nanowires using dynamic optical tweezers
Optical Trapping and Optical Micromanipulation IX 8458(2012) 1-7
Mapping optical process in semiconductor nanowires using dynamic optical tweezers
Optical Trapping and Optical Micromanipulation IX 8458(2012) 1-7
Wang F, Toe W, Hartstone A, Ming Lee W, McGloin D, Gao Q, Tan H, Jagadish C, Reece P
Mapping optical process in semiconductor nanowires using dynamic optical tweezers
Optical Trapping and Optical Micromanipulation IX 8458(2012) 1-7
Mapping optical process in semiconductor nanowires using dynamic optical tweezers
Optical Trapping and Optical Micromanipulation IX 8458(2012) 1-7
Wang H, Parkinson P, Tian J, Saxena D, Mokkapati S, Gao Q, Prasai P, Fu L, Karouta F, Tan H, Jagadish C
Optoelectronic properties of GaAs nanowire photodector
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 139-140
Optoelectronic properties of GaAs nanowire photodector
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 139-140
Willems van Beveren L, McCallum J, Tan H, Jagadish C
Progress towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 49-50
Progress towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 49-50
Xu H, Guo Y, Liao Z, Zou J, Gao Q, Tan H, Jagadish C
Growth of defect-free InAs Nanowires using Pd catalyst
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 31-32
Growth of defect-free InAs Nanowires using Pd catalyst
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 31-32
Ye J, Lim S, Gu S, Tan H, Jagadish C, Teo K
Magneto-transport Study on the Two Dimensional Electron Gas in ZnMgO/ZnO Heterostructure Grown by MOVPE
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 201-202
Magneto-transport Study on the Two Dimensional Electron Gas in ZnMgO/ZnO Heterostructure Grown by MOVPE
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 201-202
Yuan X, Tan H, Parkinson P, Wong-Leung J, Breuer S, Gao Q, Jagadish C
Growth and characterization of GaAx1-xSbx nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 141-142
Growth and characterization of GaAx1-xSbx nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) (2012) 141-142
Fu L, Lu H, Mokkapati S, Jolley G, Tan H, Jagadish C
Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells
Photonics Society 2011 annual meeting (2011) 387-388
Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells
Photonics Society 2011 annual meeting (2011) 387-388
Gao Q, Joyce H, Paiman S, Kang J, Tan H, Jackson H, Smith L, Yarrison-Rice J, Zou J, Jagadish C
Compound Semiconductor Nanowires for Optoelectronic Device Applications
ICO International Conference of Information Photomics (2011) 1-2
Compound Semiconductor Nanowires for Optoelectronic Device Applications
ICO International Conference of Information Photomics (2011) 1-2
Gao Q, Kang J, Tan H, Jackson H, Smith L, Yarrison-Rice J, Zou J, Jagadish C
Growth and characterization of compound semiconductor nanowires on Si
IEEE Conference on Nanotechnology (IEEE-NANO 2011) (2011) 44-47
Growth and characterization of compound semiconductor nanowires on Si
IEEE Conference on Nanotechnology (IEEE-NANO 2011) (2011) 44-47
Gao Q, Tan H, Jackson H, Smith L, Yarrison-Rice J, Zou J, Johnson M, Jagadish C
Growth and characterization of III-V compound semiconductor nanowires
Opto-Electronics and Communications Conference (OECC 2011) (2011) 366-367
Growth and characterization of III-V compound semiconductor nanowires
Opto-Electronics and Communications Conference (OECC 2011) (2011) 366-367
Jackson H, Perera S, Pemasiri K, Smith L, Yarrison-Rice J, Kang J, Gao Q, Tan H, Jagadish C, Guo Y, Zou J
Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy
International Conference on the Physics of Semiconductors 2010 1399(2011) 481-482
Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy
International Conference on the Physics of Semiconductors 2010 1399(2011) 481-482
Jackson H, Perera S, Pemasiri K, Smith L, Yarrison-Rice J, Kang J, Gao Q, Tan H, Jagadish C, Guo Y, Zou J
Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy
International Conference on the Physics of Semiconductors 2010 1399(2011) 481-482
Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy
International Conference on the Physics of Semiconductors 2010 1399(2011) 481-482
Jolley G, Fu L, Tan H, Jagadish C
Growth and confinement effects in III-V semiconductor nanostructures
Microoptics Conference (MOC 2011) (2011)
Growth and confinement effects in III-V semiconductor nanostructures
Microoptics Conference (MOC 2011) (2011)
Jolley G, Lu H, Fu L, Tan H, Rao Tatavarti S, Jagadish C
The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties
IEEE Photovoltaic Specialists Conference PVSC 2011 (2011) 513-516
The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties
IEEE Photovoltaic Specialists Conference PVSC 2011 (2011) 513-516
Reece P, Toe W, Wang F, Paiman S, Gao Q, Tan H, Jagadish C
High speed synchronous position sensing and acousto-optic switching for optical tweezers applications
Optical Trapping Applications, OTA 2011 (2011)
High speed synchronous position sensing and acousto-optic switching for optical tweezers applications
Optical Trapping Applications, OTA 2011 (2011)
Wang F, Paiman S, Gao Q, Tan H, Jagadish C, Reece P
Two-photon luminescence study of optically trapped InP semiconductor nanowires
2011 International Quantum Electronics Conference, IQEC 2011 and Conference on Lasers and Electro-Optics, CLEO Pacific Rim 2011 (2011) 221-223
Two-photon luminescence study of optically trapped InP semiconductor nanowires
2011 International Quantum Electronics Conference, IQEC 2011 and Conference on Lasers and Electro-Optics, CLEO Pacific Rim 2011 (2011) 221-223
Dong H, Chen Z, Sun L, Lu J, Xie W, Tan H, Jagadish C, Shen X
Synthesis of indium oxide hexagonal microcavity and identification of its whispering gallery modes
14th International Conference on II-VI Compounds, II-VI 2009 7, 6(2010) 1672-1674
Synthesis of indium oxide hexagonal microcavity and identification of its whispering gallery modes
14th International Conference on II-VI Compounds, II-VI 2009 7, 6(2010) 1672-1674
Du S, Fu L, Tan H, Jagadish C
Study of intermixing mechanism in AlInGaAs/InGaAs quantum well
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 47-48
Study of intermixing mechanism in AlInGaAs/InGaAs quantum well
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 47-48
Fu L, Jolley G, Lu H, Majid A, Tan H, Jagadish C
Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 716-717
Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 716-717
Guo Y, Zou J, Joyce H, Gao Q, Tan H, Jagadish C
Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 51-52
Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 51-52
Guo Y, Zou J, Joyce H, Gao Q, Tan H, Jagadish C
Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 51-52
Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 51-52
Hall C, Dao L, Koike K, Sasa S, Tan H, Inoue M, Yano M, Jagadish C, Davis J
Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 45-46
Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 45-46
Hall C, Dao L, Koike K, Sasa S, Tan H, Inoue M, Yano M, Jagadish C, Davis J
Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells
International Conference on Ultrafast Phenomena, UP 2010 (2010) 1-2
Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells
International Conference on Ultrafast Phenomena, UP 2010 (2010) 1-2
Hall C, Dao L, Tan H, Jagadish C, Davis J
Observation of spatially separated coherent coupling near the LO phonon resonance within asymmetric double quantum wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 115-116
Observation of spatially separated coherent coupling near the LO phonon resonance within asymmetric double quantum wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 115-116
Headley C, Fu L, Parkinson P, Xu X, Lloyd-Hughes J, Jagadish C, Johnston M
Improved performance of GaAs-based terahertz emitters
35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 (2010)
Improved performance of GaAs-based terahertz emitters
35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 (2010)
Kang J, Gao Q, Joyce H, Tan H, Jagadish C, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Improvement of Morphology, Structure, and Optical Properties of GaAs Nanowires Grown on Si substrates
IEEE Conference on Nanotechnology (IEEE-NANO 2010) (2010) 470-473
Improvement of Morphology, Structure, and Optical Properties of GaAs Nanowires Grown on Si substrates
IEEE Conference on Nanotechnology (IEEE-NANO 2010) (2010) 470-473
Kang J, Gao Q, Joyce H, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J, Tan H, Jagadish C
Structural and Optical Characterization of Vertical GaAs / GaP Core-Shell Nanowires Grown on Si Substrates
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 57-58
Structural and Optical Characterization of Vertical GaAs / GaP Core-Shell Nanowires Grown on Si Substrates
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 57-58
Kang J, Gao Q, Joyce H, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J, Tan H, Jagadish C
Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) na(2010) 57-58
Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) na(2010) 57-58
Kang J, Gao Q, Joyce H, Tan H, Jagadish C, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates
IEEE Conference on Nanotechnology (IEEE-NANO 2010) (2010) 470-473
Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates
IEEE Conference on Nanotechnology (IEEE-NANO 2010) (2010) 470-473
Lei W, Tan H, Jagadish C
Mid-infrared InAsSb quantum dots with high emission efficiency
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 65-66
Mid-infrared InAsSb quantum dots with high emission efficiency
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 65-66
Lei W, Tan H, Jagadish C
Shape control and emission wavelength extension of InP-based InAsSb nanostructures
2009 MRS Fall Meeting 1208(2010) 178-183
Shape control and emission wavelength extension of InP-based InAsSb nanostructures
2009 MRS Fall Meeting 1208(2010) 178-183
Li Z, Hattori H, Fu L, Tan H, Jagadish C
High efficiency coupling of light from photonic wire lasers into nano-antennas
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 67-68
High efficiency coupling of light from photonic wire lasers into nano-antennas
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 67-68
Li Z, Hattori H, Fu L, Tan H, Jagadish C
High efficiency coupling of light from photonic wire lasers into nano-antennas
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 67-68
High efficiency coupling of light from photonic wire lasers into nano-antennas
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 67-68
Liu D, Hattori H, Fu L, Tan H, Jagadish C
Analysis of multi-wavelength photonic crystal single-defect laser arrays
23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (2010) 500-501
Analysis of multi-wavelength photonic crystal single-defect laser arrays
23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (2010) 500-501
Liu D, Hattori H, Fu L, Tan H, Jagadish C
Increasing the coupling efficiency of a microdisk laser to waveguides by using spiral structures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 69-70
Increasing the coupling efficiency of a microdisk laser to waveguides by using spiral structures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 69-70
Lu H, Fu L, Jolley G, Tan H, Rao Tatavarti S, Jagadish C
Temperature Dependence of Dark Current Properties of InGaAs/GaAs Quantum Dot Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 127-128
Temperature Dependence of Dark Current Properties of InGaAs/GaAs Quantum Dot Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 127-128
Lu J, Ren Q, Tan H, Wu S, An Z, Zhang S, Zhu Y, Chen Z, Jagadish C, Shen X
Selective enhancement of photon emission in a quantum dot coupling with micropillar cavity
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 71-72
Selective enhancement of photon emission in a quantum dot coupling with micropillar cavity
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 71-72
Majid A, Fu L, Jagadish C, Tan H
MOCVD grown quantum dot-in-a-well solar cells
11th International Symposium on Advanced Materials, ISAM-2009 442(2010) 398-403
MOCVD grown quantum dot-in-a-well solar cells
11th International Symposium on Advanced Materials, ISAM-2009 442(2010) 398-403
McKerracher I, Wong-Leung J, Jolley G, Fu L, Tan H, Jagadish C
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 2
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 2
Minovich A, Farnell J, Neshev D, Powell D, Shadrivov I, McKerracher I, Tan H, Jagadish C, Kivshar Y
Infrared metamaterials tuned by liquid crystals
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 27-28
Infrared metamaterials tuned by liquid crystals
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 27-28
Paiman S, Gao Q, Joyce H, Tan H, Jagadish C, Kim Y, Guo Y, Zou J
Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 37-38
Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 37-38
Paiman S, Gao Q, Joyce H, Tan H, Jagadish C, Kim Y, Guo Y, Zou J
Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 37-38
Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 37-38
Parkinson P, Joyce H, Xu X, Gao Q, Tan H, Jagadish C, Herz L, Johnston M
Characterisation of nanostructures via terahertz spectroscopy
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 23-24
Characterisation of nanostructures via terahertz spectroscopy
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 23-24
Ramesh V, Gao Q, Tan H, Paiman S, Guo Y, Zou J, Jagadish C
InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 83-84
InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 83-84
Ramesh V, Gao Q, Tan H, Paiman S, Guo Y, Zou J, Jagadish C
InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 83-84
InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 83-84
Vora K, Belay K, Pyke D, Karouta F, Jagadish C
Correlating properties of PECVD SiNx layers to deposition parameters
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 197-198
Correlating properties of PECVD SiNx layers to deposition parameters
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 197-198
Waddington D, Burke A, Fricke S, Tan H, Jagadish C, Hamilton A, Trunov K, Reuter D, Wieck A, Micolich A
Can insulating the gates lead us to stable modulation-doped hole quantum devices?
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 199-200
Can insulating the gates lead us to stable modulation-doped hole quantum devices?
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 199-200
Wang F, Toe W, Paiman S, Gao Q, Gal M, Tan H, Jagadish C, Reece P
Photoluminescence study of optically trapped InP semiconductor nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 211-212
Photoluminescence study of optically trapped InP semiconductor nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 211-212
Wang F, Toe W, Paiman S, Gao Q, Gal M, Tan H, Jagadish C, Reece P
Photoluminescence study of optically trapped InP semiconductor nanowires
Optical Trapping and Optical Micromanipulation VII 7762(2010) 1-6
Photoluminescence study of optically trapped InP semiconductor nanowires
Optical Trapping and Optical Micromanipulation VII 7762(2010) 1-6
Williams M, Burke A, Joyce H, Micolich A, Tan H, Jagadish C
A comparative study of transistors based on wurtzite and zincblende InAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 203-204
A comparative study of transistors based on wurtzite and zincblende InAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 203-204
Xu H, Wang Y, Guo Y, Zou J, Gao Q, Tan H, Jagadish C
Growth of GaAs nanowires using different Au catalysts
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 35-36
Growth of GaAs nanowires using different Au catalysts
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 35-36
Xu H, Wang Y, Guo Y, Zou J, Gao Q, Tan H, Jagadish C
Growth of GaAs nanowires using different Au catalysts
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 35-36
Growth of GaAs nanowires using different Au catalysts
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) (2010) 35-36
Gao Q, Joyce H, Paiman S, Tan H, Kim Y, Smith L, Jackson H, Yarrison-Rice J, Zhang X, Zou J, Jagadish C
Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
14th OptoElectronics and Communications Conference (OECC 2009) (2009)
Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
14th OptoElectronics and Communications Conference (OECC 2009) (2009)
Gao Q, Joyce H, Paiman S, Kang J, Tan H, Kim Y, Smith L, Jackson H, Yarrison-Rice J, Zhang X, Zou J, Jagadish C
Nanowires for optoelectronic device applications
15th International Semiconducting and Insulating Materials Conference, SIMC-XV 6, 12(2009) 2678-2682
Nanowires for optoelectronic device applications
15th International Semiconducting and Insulating Materials Conference, SIMC-XV 6, 12(2009) 2678-2682
Joyce H, Paiman S, Gao Q, Tan H, Kim Y, Smith L, Jackson H, Yarrison-Rice J, Zhang X, Zou J, Jagadish C
III-V compound semiconductor nanowires
2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 (2009) 59-60
III-V compound semiconductor nanowires
2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 (2009) 59-60
Minovich A, Neshev D, Powell D, Shadrivov I, Lapine M, McKerracher I, Hattori H, Tan H, Jagadish C, Kivshar Y
Tilted response of fishnet photonic metamaterials at near-infrared wavelengths
Australasian Conference on Optics, Lasers and Spectroscopy and the Australian Conference on Optical Fibre Technology in association with the International Workshop on Dissipative Solitons (ACOLS ACOFT 2009) (2009) 2
Tilted response of fishnet photonic metamaterials at near-infrared wavelengths
Australasian Conference on Optics, Lasers and Spectroscopy and the Australian Conference on Optical Fibre Technology in association with the International Workshop on Dissipative Solitons (ACOLS ACOFT 2009) (2009) 2
Paiman S, Gao Q, Tan H, Jagadish C, Pemasiri K, Montazeri M, Jackson H, Smith L, Yarrison-Rice J, Zhang X, Zou J
Effect of the crystal structure on the optical properties of InP nanowires
2009 IEEE LEOS Annual Meeting Conference, LEOS '09 (2009) 145-146
Effect of the crystal structure on the optical properties of InP nanowires
2009 IEEE LEOS Annual Meeting Conference, LEOS '09 (2009) 145-146
Paiman S, Joyce H, Kang J, Gao Q, Tan H, Kim Y, Zhang X, Zou J, Jagadish C
III-V compound semiconductor nanowires
2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 (2009) 155-156
III-V compound semiconductor nanowires
2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 (2009) 155-156
Song Y, Zhang P, Tian J, Zhang X, Jagadish C, Tan H
Semiconductor disk laser with a diamond heatspreader
CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics (2009) 1-2
Semiconductor disk laser with a diamond heatspreader
CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics (2009) 1-2
Barik S, Fu L, Tan H, Jagadish C
Role of Stress on Impurity Free Disordering of Quantum Dots
IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008) (2008) 221-224
Role of Stress on Impurity Free Disordering of Quantum Dots
IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008) (2008) 221-224
Du S, Fu L, Tan H, Jagadish C
Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells
International Conference on Nanoscience and Nanotechnology (ICONN 2008) (2008) 32-35
Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells
International Conference on Nanoscience and Nanotechnology (ICONN 2008) (2008) 32-35
Jackson H, Perera S, Fickenscher M, Smith L, Yarrison-Rice J, Joyce H, Gao Q, Tan H, Jagadish C, Zhang X, Zou J
Optical properties of single InP and GaAs nanowire heterostructures
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2008) (2008) 427-428
Optical properties of single InP and GaAs nanowire heterostructures
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2008) (2008) 427-428
Joyce H, Gao Q, Kim Y, Tan H, Jagadish C, Zhang X, Guo Y, Zou J, Fickenscher M, Perera S, Hoang T, Smith L, Jackson H, Yarrison-Rice J
Growth, Structural and Optical Properties of High Quality GaAs Nanowires for Optoelectronics
IEEE Conference on Nanotechnology (IEEE-NANO 2008) (2008) 59-62
Growth, Structural and Optical Properties of High Quality GaAs Nanowires for Optoelectronics
IEEE Conference on Nanotechnology (IEEE-NANO 2008) (2008) 59-62
Joyce H, Gao Q, Kim Y, Tan H, Jagadish C, Zhang X, Guo Y, Zou J, Fickenscher M, Perera S, Hoang T, Smith L, Jackson H, Yarrison-Rice J
Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics
2008 8th IEEE Conference on Nanotechnology, IEEE-NANO (2008) 59-62
Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics
2008 8th IEEE Conference on Nanotechnology, IEEE-NANO (2008) 59-62
McKerracher I, Fu L, Tan H, Jagadish C
Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering
Nanoengineering: Fabrication, Properties, Optics, and Devices 2008 7039(2008) 70390U/1-10
Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering
Nanoengineering: Fabrication, Properties, Optics, and Devices 2008 7039(2008) 70390U/1-10
McKerracher I, Hattori H, Fu L, Tan H, Jagadish C
Photonic crystal-enhanced quantum dot infrared photodetectors
Nanoengineering: Fabrication, Properties, Optics, and Devices 2008 7039(2008) 70390S/1-11
Photonic crystal-enhanced quantum dot infrared photodetectors
Nanoengineering: Fabrication, Properties, Optics, and Devices 2008 7039(2008) 70390S/1-11
Minovich A, Hattori H, McKerracher I, Tan H, Neshev D, Jagadish C, Kivshar Y
Light transmission through nanohole arrays of periodic and quasi-periodic geometries
Optical Fabrication and Testing, OFT 2008 (2008)
Light transmission through nanohole arrays of periodic and quasi-periodic geometries
Optical Fabrication and Testing, OFT 2008 (2008)
Zou J, Paladugu M, Guo Y, Zhang X, Auchterlonie G, Joyce H, Gao Q, Tan H, Jagadish C, Kim Y
Growth behavior of epitaxial semiconductor axial nanowire heterostructures
IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008) (2008) 71-74
Growth behavior of epitaxial semiconductor axial nanowire heterostructures
IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008) (2008) 71-74
Joyce H, Gao Q, Kim Y, Tan H, Jagadish C
Growth, structural and optical properties of GaAs, InGaAs and AIGaAs nanowires and nanowire heterostructures
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2007) (2007) 407-408
Growth, structural and optical properties of GaAs, InGaAs and AIGaAs nanowires and nanowire heterostructures
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2007) (2007) 407-408
Barik S, Tan H, Jagadish C
Growth of Stacked InAs/InP Quantum Dot Structures
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 454-457
Growth of Stacked InAs/InP Quantum Dot Structures
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 454-457
Castro-Camus E, Lloyd-Hughes J, Fraser M, Tan H, Jagadish C, Johnston M
Polarization Sensitive Terahertz Time Domain Spectroscopy
Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science/Conference on Photonic Applications, Systems and Technologies (CLEO/QELS 2006) (2006) CMS4-1-2
Polarization Sensitive Terahertz Time Domain Spectroscopy
Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science/Conference on Photonic Applications, Systems and Technologies (CLEO/QELS 2006) (2006) CMS4-1-2
Fu L, McKerracher I, Tan H, Jagadish C
Thermal Annealing Study on InGaAs/GaAs Quantum Dot Infrared Photodetectors
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 493-496
Thermal Annealing Study on InGaAs/GaAs Quantum Dot Infrared Photodetectors
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 493-496
Gao Q, Buda M, Tan H, Jagadish C
InGaAsN Quantum Dots for Long Wavelength Lasers
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 482-485
InGaAsN Quantum Dots for Long Wavelength Lasers
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 482-485
Jolley G, Fu L, Tan H, Jagadish C, Vukmirovic N, Harrison P
Quantum Dots-in-a-Well Infrared Photodetectors Grown by MOCVD
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 419-422
Quantum Dots-in-a-Well Infrared Photodetectors Grown by MOCVD
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 419-422
Joyce H, Kim Y, Gao Q, Tan H, Jagadish C
Growth, Structural and Optical Properties of GaAs/AlGaAs Core/Shell Nanowires with and without Quantum Well Shells
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 450-453
Growth, Structural and Optical Properties of GaAs/AlGaAs Core/Shell Nanowires with and without Quantum Well Shells
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 450-453
Lloyd-Hughes J, Castro-Camus E, Fraser M, Tan H, Jagadish C, Johnston M
Terahertz Emission and Lifetime Measurements of Ion-implanted Semiconductors: Experiment and Simulation
Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science/Conference on Photonic Applications, Systems and Technologies (CLEO/QELS 2006) (2006) JTuD18-1-2
Terahertz Emission and Lifetime Measurements of Ion-implanted Semiconductors: Experiment and Simulation
Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science/Conference on Photonic Applications, Systems and Technologies (CLEO/QELS 2006) (2006) JTuD18-1-2
Mokkapati S, Tan H, Jagadish C, McBean K, Phillips M
Integration of Quantum Dot devices by Selective Area Epitaxy
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 442-445
Integration of Quantum Dot devices by Selective Area Epitaxy
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 442-445
Paladugu M, Zou J, Wang H, Auchterlonie G, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Understanding the Kink Formation in GaAs/InAs Heterostructural Nanowires
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 600-603
Understanding the Kink Formation in GaAs/InAs Heterostructural Nanowires
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 600-603
Sears K, Tan H, Buda M, Wong-Leung J, Jagadish C
Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 505-508
Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 505-508
Zou J, Wang H, Auchterlonie G, Paladugu M, Gao Y, Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Growth Mechanism of Truncated Triangular GaAs Nanowires
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 604-605
Growth Mechanism of Truncated Triangular GaAs Nanowires
International Conference on Nanoscience and Nanotechnology (ICONN 2006) (2006) 604-605
Barik S, Tan H, Jagadish C
Role of Thin GaAs Interlayer on InAs Quantum Dots Grown on InGaAsP/InP (100) by Metalorganic Chemical Vapor Deposition
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) (2005) 331-334
Role of Thin GaAs Interlayer on InAs Quantum Dots Grown on InGaAsP/InP (100) by Metalorganic Chemical Vapor Deposition
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) (2005) 331-334
Coleman V, Tan H, Jagadish C, Kucheyev S, Zou J, Phillips M
Towards p-type Doping of ZnO by Ion Implantation
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 829(2005) 847-848
Towards p-type Doping of ZnO by Ion Implantation
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 829(2005) 847-848
Fu L, Kuffner P, McKerracher I, Tan H, Jagadish C
Rapid Thermal Annealing Study of InGaAs/GaAs Quantum Dot Infrared Photodetectors grown by Metal-Organic Chemical Vapour Deposition
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005(2005) 228-229
Rapid Thermal Annealing Study of InGaAs/GaAs Quantum Dot Infrared Photodetectors grown by Metal-Organic Chemical Vapour Deposition
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005(2005) 228-229
Gao Q, Buda M, Tan H, Jagadish C
Comparison of Photocurrent Spectra of InGaAsN QD and InGaAs QW Laser Devices
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) (2005) 9-12
Comparison of Photocurrent Spectra of InGaAsN QD and InGaAs QW Laser Devices
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) (2005) 9-12
Gao Q, Fu L, McGowan P, Mokkapati S, Buda M, Tan H, Jagadish C
Quantum Dot Optoelectronic Devices
Microoptics Conference (MOC 2005) (2005) J5-1-4
Quantum Dot Optoelectronic Devices
Microoptics Conference (MOC 2005) (2005) J5-1-4
Gareso P, Tan H, Wong-Leung J, Jagadish C, Dao L
Proton Irradiation Induced Intermixing in InxGa1_xAs/InP Quantum Wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) (2005) 93-96
Proton Irradiation Induced Intermixing in InxGa1_xAs/InP Quantum Wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) (2005) 93-96
Hoskens R, van de Roer T, Smalbrugge E, Kwaspen J, Tolstikhin V, Tan H, Jagadish C, Acket G
Hot Electron Injection Laser controlled carrier-heating induced gain switching
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) (2005) 397-400
Hot Electron Injection Laser controlled carrier-heating induced gain switching
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) (2005) 397-400
Kim Y, Joyce H, Gao Q, Tan H, Jagadish C
Growth of GaAs/InAs Vertical Nanowires on GaAs (111)B by Metalorganic Chemical Vapor Deposition
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005(2005) 455-456
Growth of GaAs/InAs Vertical Nanowires on GaAs (111)B by Metalorganic Chemical Vapor Deposition
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005(2005) 455-456
McGowan P, Lowrie-Nunes Z, Buda M, Tan H, Jagadish C
Characterisation of InGaAs/GaAs Quantum Dot Lasers Grown by Metal-Organic Vapour Phase Epitaxy
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) (2005) 277-279
Characterisation of InGaAs/GaAs Quantum Dot Lasers Grown by Metal-Organic Vapour Phase Epitaxy
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) (2005) 277-279
Mokkapati S, McGowan P, Tan H, Jagadish C, McBean K, Phillips M
Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) 4(2005) 273-275
Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) 4(2005) 273-275
Mokkapati S, Tan H, Jagadish C
Integration of an InGaAs Quantum-Dot Laser with a Passive Waveguide using Selective-Area MOCVD
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005(2005) 915-916
Integration of an InGaAs Quantum-Dot Laser with a Passive Waveguide using Selective-Area MOCVD
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005(2005) 915-916
Sears K, Buda M, Tan H, Jagadish C
The Impact of AlGaAs Cladding Layers Grown at Low Temperature on the Performance of MOCVD based in InAs/GaAs Quantum Dot Laser Diodes
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005(2005) 911-912
The Impact of AlGaAs Cladding Layers Grown at Low Temperature on the Performance of MOCVD based in InAs/GaAs Quantum Dot Laser Diodes
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005(2005) 911-912
Sears K, Mokkapati S, Buda M, McGowan P, Tan H, Jagadish C
Quantum Dot Lasers and Optoelectronic Device Integration
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005(2005) 606-608
Quantum Dot Lasers and Optoelectronic Device Integration
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005(2005) 606-608
Sears K, Wong-Leung J, Buda M, Tan H, Jagadish C
Growth and Characterisation of InAs/GaAs Quantum Dots grown by MOCVD
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) (2005) 1-4
Growth and Characterisation of InAs/GaAs Quantum Dots grown by MOCVD
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) (2005) 1-4
Deenapanray P, Krispin M, Meyer W, Tan H, Jagadish C, Auret F
Defect Engineering and Atomic Relocation Processes in Impurity-Free Disordered GaAs and AIGaAs
Materials Research Society Meeting 2003 799(2004) 1
Defect Engineering and Atomic Relocation Processes in Impurity-Free Disordered GaAs and AIGaAs
Materials Research Society Meeting 2003 799(2004) 1
Buda M, Jagadish C
Computation of the Modal Reflectivity for a Partially Etched Mirror: Application for Integration of a Laser Diode and a Waveguide
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 137-140
Computation of the Modal Reflectivity for a Partially Etched Mirror: Application for Integration of a Laser Diode and a Waveguide
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 137-140
Buda M, Tan H, Fu L, Josyula L, Jagadish C
Improvement of Kink-free Operation in InGaAs/GaAs/AlGaAs High Power, Ridge Waveguide Laser Diodes
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 25-28
Improvement of Kink-free Operation in InGaAs/GaAs/AlGaAs High Power, Ridge Waveguide Laser Diodes
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 25-28
Carmody C, Tan H, Jagadish C
Evolution of InGaAs/InP Quantum Well Intermixing as a Function of Cap Layer
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 491-494
Evolution of InGaAs/InP Quantum Well Intermixing as a Function of Cap Layer
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 491-494
Carmody C, Tan H, Jagadish C, Zou J, Dao L, Gal M
Structural, Electrical and Optical Properties of MEV As+ Ion Implanted InP
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 487-490
Structural, Electrical and Optical Properties of MEV As+ Ion Implanted InP
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 487-490
Coleman V, Deenapanray P, Tan H, Jagadish C
Atomic Relocation of Fast Diffusers in Impurity-free Disordered P-type GaAs
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 495-498
Atomic Relocation of Fast Diffusers in Impurity-free Disordered P-type GaAs
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 495-498
Fu L, McGowan P, Tan H, Jagadish C, Reece P, Gal M
Suppression of Interdiffusion in In0.5Ga0.5As/GaAs Quantum Dots
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 503-506
Suppression of Interdiffusion in In0.5Ga0.5As/GaAs Quantum Dots
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 503-506
Gao Q, Tan H, Jagadish C, Sun B, Gal M, Ouyang L, Zou J
Growth and Characterization of GaAsN Bulk Layer and (InGaAsN Quantum-well Structures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 247-250
Growth and Characterization of GaAsN Bulk Layer and (InGaAsN Quantum-well Structures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 247-250
Lay M, McCallum J, De Medeiros Azevedo G, Deenapanray P, Jagadish C
A Deep Level Transient Spectroscopy Study of Vacancy-related Defect Profiles in Channeled Ion Implanted Silicon
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 437-440
A Deep Level Transient Spectroscopy Study of Vacancy-related Defect Profiles in Channeled Ion Implanted Silicon
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 437-440
McGowan P, Tan H, Jagadish C
Growth of InGaAs Quantum Dots by Metal Organic Chemical Vapour Deposition
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 307-310
Growth of InGaAs Quantum Dots by Metal Organic Chemical Vapour Deposition
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 307-310
McGowan P, Tan H, Reece P, Gal M, Jagadish C
Interdiffusion in InGaAs Quantum Dots by Ion Implantation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 515-518
Interdiffusion in InGaAs Quantum Dots by Ion Implantation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 515-518
Sun B, Gal M, Gao Q, Tan H, Jagadish C
Properties of Radiative Recombination in GaAsN Epilayers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 483-486
Properties of Radiative Recombination in GaAsN Epilayers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) (2003) 483-486
Williams J, Elliman R, Tan H, McGowan P, Wong-Leung J, Jagadish C
Production and Processing of Semiconductor Nanocrystals and Nanostructures for Photonic Applications
National Conference and Exhibition on Nanotechnology 2003 (2003) 74-80
Production and Processing of Semiconductor Nanocrystals and Nanostructures for Photonic Applications
National Conference and Exhibition on Nanotechnology 2003 (2003) 74-80
Buda M, Fu L, Hay J, Deenapanray P, Tan H, Jagadish C, Reece P, Gal M
Impurity Free Intermixing for Optoelectronic Device Integration
Integrated Optoelectronics (2002) 89-105
Impurity Free Intermixing for Optoelectronic Device Integration
Integrated Optoelectronics (2002) 89-105
Vyvenko O, Sachdeva R, Istratov A, Armitage R, Weber E, Deenapanray P, Jagadish C, Gao Y, Huff H
Study of Diffusivity and Electrical Properties of Zr and Hf in Silicon
Semiconductor Silicon 2002 (2002) 440-451
Study of Diffusivity and Electrical Properties of Zr and Hf in Silicon
Semiconductor Silicon 2002 (2002) 440-451
Kucheyev S, Bradby J, Williams J, Swain M, Toth M, Phillips M, Jagadish C
Mechanical Properties of As-Grown and Ion-Beam-Modified GaN Films
Materials Research Society Meeting Fall 2000 (2001) Q5.5.1-Q5.5.6
Mechanical Properties of As-Grown and Ion-Beam-Modified GaN Films
Materials Research Society Meeting Fall 2000 (2001) Q5.5.1-Q5.5.6
Kucheyev S, Williams J, Zou J, Jagadish C, Bradby J, Li G
Ion Beam Damage Processes in GaN
III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) (2001) 150-160
Ion Beam Damage Processes in GaN
III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) (2001) 150-160
Toth M, Phillips M, Kucheyev S, Williams J, Jagadish C, Li G
Charge Contrast in SE Images Obtained Using the ESEM
Institute of Physics Conference No 165 (2000) (2000) 275-276
Charge Contrast in SE Images Obtained Using the ESEM
Institute of Physics Conference No 165 (2000) (2000) 275-276
Conference written presentation
Wong W, Su Z, Wang N, Jagadish C, Tan H
Epitaxially-grown InP micro-ring lasers
ISLC2021 - International Semiconductor Laser Conference (2021)
Epitaxially-grown InP micro-ring lasers
ISLC2021 - International Semiconductor Laser Conference (2021)
Gao Q, Fu L, Li L, Vora K, Li Z, Wang F, Li Z, Wenas Y, Mokkapati S, Karouta F, Tan H, Jagadish C
Direct Characterization of Axial p-n Junctions for InP Nanowire Array Solar Cells Using Electron Beam-Induced Current
Light, Energy and the Environment 2015 (2015)
Direct Characterization of Axial p-n Junctions for InP Nanowire Array Solar Cells Using Electron Beam-Induced Current
Light, Energy and the Environment 2015 (2015)
Jackson H, Smith L, Jagadish C
Recent advances in semiconductor nanowire heterostructures
Symposium on State-of-the-Art Program on Compound Semiconductors 56, SOTAPOCS 2014 - 2014 ECS and SMEQ Joint International Meeting (2014) 1-5
Recent advances in semiconductor nanowire heterostructures
Symposium on State-of-the-Art Program on Compound Semiconductors 56, SOTAPOCS 2014 - 2014 ECS and SMEQ Joint International Meeting (2014) 1-5
Neshev D, Decker M, Kruk S, Staude I, Shishkin I, Samusev K, Parkinson P, Sreenivasan V, Minovich A, Miroshnichenko A, Zvyagin A, Jagadish C, Kivshar Y
Control of quantum-dot emission in magnetic metamaterials
7th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics (Metamaterials 2013) (2013)
Control of quantum-dot emission in magnetic metamaterials
7th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics (Metamaterials 2013) (2013)
Journal short contribution
Fu L, Jagadish C
Perspectives on III-V Semiconductor Nanowire Optoelectronics and Beyond [Highlights]
IEEE Nanotechnology Magazine 17, 2(2023) 5-7
Perspectives on III-V Semiconductor Nanowire Optoelectronics and Beyond [Highlights]
IEEE Nanotechnology Magazine 17, 2(2023) 5-7
Rahmani M, Jagadish C
Light-Matter interactions on the nanoscale
Beilstein Journal of Nanotechology 9(2018) 2125-2127
Light-Matter interactions on the nanoscale
Beilstein Journal of Nanotechology 9(2018) 2125-2127
Journal Editor
DenBaars S, Joyce H, Jagadish C
Guest Editorial Introduction to the Special Issue on Semiconductor Optoelectronic Materials and Devices
IEEE Journal of Quantum Electronics 58, 4(2022)
Guest Editorial Introduction to the Special Issue on Semiconductor Optoelectronic Materials and Devices
IEEE Journal of Quantum Electronics 58, 4(2022)
Jagadish C, Fontcuberta i Morral A
Special issue on Nanowires Preface
Journal of Physics D: Applied Physics 47, 39(2014)
Special issue on Nanowires Preface
Journal of Physics D: Applied Physics 47, 39(2014)
Dieny B, Jagadish C
Emerging non-volatile memories: magnetic and resistive technologies
Journal of Physics D: Applied Physics 46, 7(2013)
Emerging non-volatile memories: magnetic and resistive technologies
Journal of Physics D: Applied Physics 46, 7(2013)
Fu L, Tan H, Jagadish C
Nanostructured photovoltaics PREFACE
Journal of Physics D: Applied Physics 46, 2(2013) 1
Nanostructured photovoltaics PREFACE
Journal of Physics D: Applied Physics 46, 2(2013) 1
Jagadish C, Geelhaar L, Gradecak S
Semiconductor Nanowires
Physica Status Solidi: Rapid Research Letters 7, 10(2013) 683-684
Semiconductor Nanowires
Physica Status Solidi: Rapid Research Letters 7, 10(2013) 683-684
Jagadish C
Special issue in honor of Professor J. Gary Eden on the occasion of his 60th birthday
Progress in Quantum Electronics 36, 1(2012) 1-3
Special issue in honor of Professor J. Gary Eden on the occasion of his 60th birthday
Progress in Quantum Electronics 36, 1(2012) 1-3
Journal article (non-refereed)
Lee Y, Gupta B, Tan H, Jagadish C, Oh J, Karuturi S
Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting
STAR Protocols 3, 1(2022) 1-15
Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting
STAR Protocols 3, 1(2022) 1-15
Li Z, Yuan X, Gao Q, Yang I, Li L, Caroff-Gaonac'h P, Allen M, Allen J, Tan H, Jagadish C, Fu L
Erratum: In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse (vol 31, 244002, 2020)
Nanotechnology 31, 34(2020)
Erratum: In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse (vol 31, 244002, 2020)
Nanotechnology 31, 34(2020)
Jagadish C
III-V semiconductor nanowires: Plasmonics and optoelectronics
Australian Physics 52, 3(2015) 84-90
III-V semiconductor nanowires: Plasmonics and optoelectronics
Australian Physics 52, 3(2015) 84-90
Journal short contribution (non refereed)
Dawson M, Geohegan D, Spinka T, Jagadish C
Special issue in honor of the 70th birthday of Professor J. Gary Eden
Progress in Quantum Electronics 81(2021) 1-5
Special issue in honor of the 70th birthday of Professor J. Gary Eden
Progress in Quantum Electronics 81(2021) 1-5
Sarma D, Chowdari B, Hearne S, Fitzsimmons M, Jagadish C
Advances in Materials Science: A special issue in honour of Prof CNR Rao
Journal of Solid State Chemistry 297(2021)
Advances in Materials Science: A special issue in honour of Prof CNR Rao
Journal of Solid State Chemistry 297(2021)
Sarma D, Chowdari B, Hearne S, Fitzsimmons M, Jagadish C
Editorial to the special issue on CNR Rao
Applied Materials Today 22, 100978(2021)
Editorial to the special issue on CNR Rao
Applied Materials Today 22, 100978(2021)
VanDenburgh K, Longobardi L, Jagadish C
Improving our Peer Review Process-Editorial
Applied Physics Reviews 8, 4(2021)
Improving our Peer Review Process-Editorial
Applied Physics Reviews 8, 4(2021)
Jagadish C, Reece P
Semiconductor Nanostructure Optoelectronics
Materials Science and Engineering B 177, 10(2012) 695-695
Semiconductor Nanostructure Optoelectronics
Materials Science and Engineering B 177, 10(2012) 695-695
Jagadish C, Dick K, LaPierre R, MOTOHISA J
Introduction to the issue on nanowires
IEEE Journal on Selected Topics in Quantum Electronics 17, 4(2011) 763-765
Introduction to the issue on nanowires
IEEE Journal on Selected Topics in Quantum Electronics 17, 4(2011) 763-765
Listing does not show publications before 2000
When dialing an ANU extension from outside the university:
- (02) 612 XXXXX (within Australia)
- +61 2 612 XXXXX (outside Australia)
Anti-Spam notice: The email addresses from this directory are made available to support the academic and business activities of ANU. These email addresses are not published as an invitation to receive unsolicited commercial messages or 'spam' and we do not consent to receipt of such materials. Any messages that are received which contravenes this policy is strictly prohibited, and is also a breach of the Spam Act 2003. The University reserves the right to recover all costs incurred in the event of breach of this policy.
Updated: 15 May 2024/ Responsible Officer: Director, RSPE/ Page Contact: Physics Webmaster