Dr Sonachand Adhikari
Position |
Postdoctoral Fellow |
|---|---|
Department |
Electronic Materials Engineering |
Office phone |
50374 |
Email |
|
Office |
Physics New 3 14 |
Research publications
Journal article
Adhikari S, Kremer F, Lysevych M, Jagadish C, Tan H
Core-shell GaN/AlGaN nanowires grown by selective area epitaxy
Nanoscale Horizons 8, 4(2023) 530-542
Core-shell GaN/AlGaN nanowires grown by selective area epitaxy
Nanoscale Horizons 8, 4(2023) 530-542
Gopakumar Saraswathyvilasam A, Adhikari S, Gupta B, Balendhran S, Higashitarumizu N, Tournet J, Li L, Javey A, Crozier K, Karuturi S, Jagadish C, Tan H
Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition
Nanotechnology 34, 49(2023) 1-10
Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition
Nanotechnology 34, 49(2023) 1-10
Adhikari S, Lee Cheong Lem O, Kremer F, Vora K, Brink F, Lysevych M, Tan H, Jagadish C
Nonpolar Al x Ga1?x N/Al y Ga1?y N multiple quantum wells on GaN nanowire for UV emission
Nano Research 15, 8(2022) 7670 - 7680
Nonpolar Al
Nano Research 15, 8(2022) 7670 - 7680
Adhikari S, Lysevych M, Jagadish C, Tan H
Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters
Crystal Growth & Design 22, 9(2022) 5345-5353
Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters
Crystal Growth & Design 22, 9(2022) 5345-5353
Gagrani N, Vora K, Adhikari S, Jiang Y, Jagadish C, Tan H
n-SnOx as a Transparent Electrode and Heterojunction for p-InP Nanowire Light Emitting Diodes
Advanced Optical Materials 10, 11(2022)
n-SnOx as a Transparent Electrode and Heterojunction for p-InP Nanowire Light Emitting Diodes
Advanced Optical Materials 10, 11(2022)
Mondal R, Adhikari S, Chatterjee V, Pal S
Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies
Materials Research Bulletin 140(2021) 1-28
Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies
Materials Research Bulletin 140(2021) 1-28
Chugh D, Adhikari S, Wong-Leung J, Lysevych M, Jagadish C, Tan H
Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN
Crystal Growth & Design 20, 3(2020) 1811-1819
Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN
Crystal Growth & Design 20, 3(2020) 1811-1819
Listing does not show publications before 0
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