Available student project - Singling out the depletion region in semiconductor devices by scanning electron microscopy

Research fields

  • Nanoscience and Nanotechnology
  • Materials Science and Engineering
FEI Verios scanning electron microscope

Project details

Scanning electron microscopy (SEM) is a powerful and widely used tool for exploring the topography and chemical composition of materials. Recently, it has been shown that the contrast observed around certain device structure can be optimised such that the depletion region can be imaged quite clearly. This project investigates the accuracy, sensitivity and limitations of the SEM technique in determining the depletion width. The project compares the depletion width in Schottky diodes as determined by the capacitance-voltage measurement technique and depletion width measured by contrast measurement in the SEM. The FEI Verios has a range of electron detectors that enable imaging with high lateral resolution. In particular this instrument has several detectors that capitalize on different electron signal generated by the scanning beam. The project will explore which imaging conditions bring out the depletion region with the highest contrast. This is of special interest to students who would like to build up their knowledge of semiconductors and electron microscopy, a technique routinely used in semiconductor characterisation.

Required background

PHYS3032 or Semiconductors course in Engineering

Project suitability

This research project can be tailored to suit students of the following type(s)
  • 3rd year special project
  • PhB (2nd or 3rd year)
  • Honours project

Contact supervisor

Wong-Leung, Jennifer profile
Senior Fellow
(02) 612 50360

Other supervisor(s)

Lockrey, Mark profile
Microanalysis Research Officer
(02) 612 59638

Updated:  15 January 2019/ Responsible Officer:  Director, RSPE/ Page Contact:  Physics Webmaster