Available student project - Mastering control over structure, composition and homogeneity in ternary nanowire growth

Research fields

  • Materials Science and Engineering
  • Nanoscience and Nanotechnology
(a) Scanning electron micrograph of InGaAs nanowire cross-section (b)-(d) Energy dispersive spectrometry (EDS) maps of In, Ga and As from a cross-section of the nanowire showing the non-uniform composition

Project details

Semiconductor nanowires are small semiconductor crystals with diameter around 10-100 nm and long aspect ratio of a few microns in length. The uniqueness of its applications lies in each of these nanowires becoming a potential device after growth. Thus for large scale integration and the full functionality of ternary nanowires, it is essential to achieve absolute control on the structure and the composition of these nanowires as well as homogeneity because these factors determine the bandgap of the semiconductor and hence its emission wavelength. In this project, innovative growth strategies will be designed to engineer ternary semiconductor nanowires of uniform composition and crystal structures. The 3D structure and composition of these nanowires will be fully characterised by a range of electron microscopy techniques with a suite of sectioning techniques including FIB and microtoming. The aim of this project is to grow homogeneous nanowires with tunability over a range of emission wavelengths by controlling the composition of the ternary semiconductor. This project has been funded by the ARC (PhD positions available for application and suitable candidates will considered for top up scholarship on application)

Project suitability

This research project can be tailored to suit students of the following type(s)
  • Phd or Masters

Contact supervisor

Wong-Leung, Jennifer profile

Other supervisor(s)

Tan, Hoe profile

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