EME publications 2003

2003

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Journal article

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In-situ Microscopy Study of Nanocavity Shrinkage in Si under Ion Beam Irradiation
European Physical Journal - Applied Physics 23() 39-40
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Common Structure in Amorphised Compound Semiconductors
Nuclear Instruments and Methods in Physics Research: Section B 199() 235-239
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Athermal Annealing of Si-implanted GaAs and InP
Journal of Applied Physics 94, 1() 130-135
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High-resolution Photoemission Study of Hydrogen Interaction with Polar and Nonpolar GaAs Surfaces
Physical Review B 67() 195325-1-8
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Shrinkage Mechanism of Nanocavities in Amorphous Si under Ion Irradiation: An in situ Study
Nuclear Instruments and Methods in Physics Research: Section B 206() 912-915
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Ferromagnetic Ga1-xMnxAs Produced by Ion Implantation and Pulsed-laser Melting
Applied Physics Letters 82, 8() 1251-1253
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Epitaxially Grown GaAsN Random Laser
Journal of Applied Physics 93, 10() 5855-5858
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Multilayered Carbon Films for Tribological Applications
Diamond and Related Materials 12() 178-184
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Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
Physica Status Solidi B (On-line) 235, 2() 427-431
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Growth Direction and Cross-Sectional Study of Silicon Nanowires
Advanced Materials 15, 7-8() 607-609
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Vacancy and Interstitial Depth Profiles in Ion-implanted Silicon
Journal of Applied Physics 93, 2() 871-877
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Determination of Carrier-transfer Length from Side-wall Quantum Well to Quantum Wire by Micro-photoluminescence Scanning
Journal of Electronic Materials 32, 8() 913-916
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Solubility Limits of Dopants in 4H-SiC
Applied Surface Science 203-204() 427-432
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Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon
Applied Physics Letters 82, 18() 2987-2989
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Ion-Cutting of Si onto Glass by Pulsed and Direct-Current Plasma Immersion Ion Implantation
Journal of Vacuum Science and Technology B 21, 5() 2109-2113
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Defective Crystal Recovered from the Crystallization of Potassium-doped Amorphous Silicon Films
Journal of the Electrochemical Society 150, 4() G266-G270
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Photonic Band-gap Effects on Photoluminescence of Silicon Nanocrystals Embedded in Artificial Opals
Journal of Applied Physics 93, 8() 4471-4474
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Active Planar Optical Waveguide Made from Luminescent Silicon Nanocrystals
Applied Physics Letters 82, 6() 955-957

President's column
Australian Physics 40, 3() 67-
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Silicon Nanowires as Chemical Sensors
Chemical Physics Letters 369, 1-2() 220-224
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Fabrication of Schottky Barrier MOSFETs on SOI by a Self-Assembly CoSi2-Patterning Method
Solid-State Electronics 47() 1183-1186
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Passively mode-locked, self-frequency doubled, diode-pumped Yb:YAl3(BO3)4 laser
Journal of Environmental Chemical Engineering 71() 158-160

Formation of InAs islands on InP(3 1 1)B surface by molecular beam epitaxy
Journal of Crystal Growth 257, 1-2() 104-109

Nano-optoelectronics
Australian Physics 40, 1() 26-

Condenser microphones - A tutorial
Canadian Acoustics 31, 2() 35-39
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Mutual Passivation of Group IV Donors and Isovalent Nitrogen in Diluted GaNxAs1-x Alloys
Physica B 340-342() 389-393
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Kinetics of H2 Passivation of Si Nanocrystals in SiO2
Physical Review B 68() 155302-1-8
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Nature of Planar Defects in Ion-implanted GaN
Electrochemical and Solid-State Letters 6, 3() G34-G36
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Mutual Passivation of Group IV Donors and Nitrogen in Diluted GaNxAs1-x Alloys
Applied Physics Letters 83, 14() 2844-2846
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Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates
Applied Physics Letters 83, 17() 3477-3479
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Fabrication and Characterization of Pure and Well-Aligned Carbon Nanotubes Using Methane/Nitrogen - Ammonia Plasma
Journal of Physical Chemistry B 107() 1514-1517
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Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon
European Physical Journal - Applied Physics 23() 5-9
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Deep Level Transient Spectroscopy of Defects Introduced in Si and SiGe by Low Energy Particles
Journal of Physics: Condensed Matter 15() S2859-S2886
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EXAFS Measurements of Metal-decorated Nanocavities in Si
Nuclear Instruments and Methods in Physics Research: Section B 199() 179-184
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Direct Observation of Structural Relaxation in Amorphous Compound Semiconductors
Nuclear Instruments and Methods in Physics Research: Section B 206() 1024-1027
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Direct Evidence of Defect Annihilation during Structural Relaxation of Amorphous Indium Phosphide
Physical Review B: Condensed Matter and Materials 68() 115204-1-6
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Electrical Characterization of Impurity-free Disordered p-type GaAs
Electrochemical and Solid-State Letters 6, 3() G37-G40
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A Comparison of Low-energy As Ion Implantation and Impurity-free Disordering Induced Defects in N-type GaAs Epitaxial Layers
Japanese Journal of Applied Physics 42, 3() 1158-1163
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Electron emission properties of a defect at ~(Ec�0.23eV) in impurity-free disorded n-GaAs
Physica B 340-342() 315-319
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Carbon nanotubes formed in graphite after mechanical grinding and thermal annealing
Applied Physics A: Materials Science and Processing 76() 633-636
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Ultrafast carrier trapping and recombination in highly resistive ion implanted InP
Journal of Applied Physics 94, 2() 1074-1078
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Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures
Journal of the Electrochemical Society 150, 8() G481-G487
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Gettering of Pd to Implantation-induced Nanocavities in Si
Applied Physics Letters 83, 5() 946-947
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In Situ Electrical Characterization of Phase Transformations in Si during Indentation
Physical Review B 67() 085205-1-9
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Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
Applied Physics Letters 82, 22() 3913-3915
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Electrical Characterization of Impurity-free Disordering-induced Defects in n-GaAs using Native Oxide Layers
Applied Physics A: Materials Science and Processing 76() 961-964
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Hydrogen Incorporation, Diffusivity and Evolution in Bulk ZnO
Solid-State Electronics 47() 2255-2259
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ICP Dry Etching of ZnO and Effects of Hydrogen
Solid-State Electronics 47() 2289-2294
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Analysis of Hybrid Photonic Crystal Vertical Cavity Surface Emitting Lasers
Optics Express 11, 15() 1799-1808
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Structural Properties of CdO Layers Grown on GaAs (001) Substrates by Metalorganic Molecular Beam Epitaxy
Journal of Crystal Growth 252() 219-225
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Growth of Triangular Shaped InGaAs/GaAs Quantum Wire Structures
Journal of Materials Science Letters 22() 467-469
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Ion-Beam-Produced Structural Defects in ZnO
Physical Review B 67, 9() 094115-1-11
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Implant Isolation of ZnO
Journal of Applied Physics 93, 5() 2972-2976
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Study of defects in ion-implanted silicon using photoluminescence and positron annihilation
Physica B 340-342() 738-742
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Structure of Amorphous Silicon Investigated by EXAFS
Nuclear Instruments and Methods in Physics Research: Section B 199() 195-199

Australian Aboriginal Musical Instruments: The Didjeridu, The Bullroarer and the Gumleaf
Acoustics Australia 31, 2() 51-54
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Nanotube growth during annealing of mechanically milled Boron
Applied Physics A: Materials Science and Processing 76() 107-110
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A Novel Pin-On-Apparatus
WEAR 254() 111-119
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Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition
Japanese Journal of Applied Physics 42() 6827-6832
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Carbon Coating of Ti-6A1-4V for Reduced Wear in Combined Impact and Sliding Applications
Tribology International 36() 873-882

(81 publications)

Conference paper

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Pump-probe Measurements using Silicon Nanocrystal Waveguides
Materials Research Society Meeting Spring 2003 ?, ?() 63-68
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Interdiffusion in InGaAs Quantum Dots by Ion Implantation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 515-518
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Growth of InGaAs Quantum Dots by Metal Organic Chemical Vapour Deposition
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 307-310
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Effect of Microcavity Structures on the Photoluminescence of Silicon Nanocrystals
Materials Research Society Meeting Spring 2003 ?, ?() 51-56
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Properties of Radiative Recombination in GaAsN Epilayers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 483-486
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Production and Processing of Semiconductor Nanocrystals and Nanostructures for Photonic Applications
National Conference and Exhibition on Nanotechnology 2003 ?, ?() 74-80
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Hydrogen Passivation Kinetics of Si Nanocrystals in SiO2
Materials Research Society Meeting Spring 2003 770() 81-86
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A Deep Level Transient Spectroscopy Study of Vacancy-related Defect Profiles in Channeled Ion Implanted Silicon
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 437-440
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Growth and Characterization of GaAsN Bulk Layer and (InGaAsN Quantum-well Structures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 247-250
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Evolution of InGaAs/InP Quantum Well Intermixing as a Function of Cap Layer
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 491-494
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Improvement of Kink-free Operation in InGaAs/GaAs/AlGaAs High Power, Ridge Waveguide Laser Diodes
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 25-28
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Structural, Electrical and Optical Properties of MEV As+ Ion Implanted InP
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 487-490
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Atomic Relocation of Fast Diffusers in Impurity-free Disordered P-type GaAs
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 495-498
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Suppression of Interdiffusion in In0.5Ga0.5As/GaAs Quantum Dots
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 503-506

Acoustics of the Syrinx or Panpipes
Western Pacific Acoustics Conference 2003 ?, ?() TB31-1-4
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Computation of the Modal Reflectivity for a Partially Etched Mirror: Application for Integration of a Laser Diode and a Waveguide
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 137-140

(16 publications)

Journal short contribution (non refereed)


What is the Meaning of Physics?
Australian Physics 40, 4() 109-111

(1 publications)

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