EME publications 2002

2002

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Book chapter

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Photon Induced Fabrication of Atomic Scale Structures on Surfaces
International Conference on Photonic, Electronic and Atomic Collisions (XXII ICPEAC)
Rinton Press, Princeton, USA (2002) 92-100

(1 publications)

Journal article

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Electrical Isolation of AlxGa1-xAs by Ion Irradiation
Applied Physics Letters 80() 264-266
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Strong screening effect of photo-generated carriers on piezoelectric field in In0.13Ga0.87N/In0.03Ga0.97N quantum wells
Japanese Journal of Applied Physics 41, 10A() L1093-L1095
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Metal Silicide/Silicon Nanowires from Metal Vapor Vacuum Arc Implantation
Advanced Materials 14, 3() 218-221
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Ultrafine and Uniform Silicon Nanowires Grown with Zeolites
Chemical Physics Letters 365() 22-26
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The Effect of Potassium on the Rate of Solid Phase Epitaxy in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 190() 777-781
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Boron doping of silicon layers grown by liquid phase epitaxy
Journal of Crystal Growth 241, 1-2() 45-50
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Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon
Nuclear Instruments and Methods in Physics Research: Section B 186() 334-338
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Absence of Fusion Suppression Due to Breakup in the 12C+7Li Reaction
Physics Letters B 526, 3-4() 295-300
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Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation
Physical Review B 65() 245201-1-9
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Silicon Nanowires Wrapped with Au Film
Journal of Physical Chemistry B 106() 6980-6984
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Enhancement of the Etch Rate of CVD Diamond by Prior C and Ge Implantation
Diamond and Related Materials 11() 837-840
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Chemical Origin of the Yellow Luminescence in GaN
Journal of Applied Physics 91, 9() 5857-5874
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X-ray Spectrometry Investigation of Electrical Isolation in GaN
Journal of Applied Physics 91, 6() 3940-3942
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Electrical Isolation of ZnO by Ion Bombardment
Applied Physics Letters 81, 18() 3350-3352
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Blistering of H-implanted GaN
Journal of Applied Physics 91, 6() 3928-3930
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Structural Disorder in Ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5() 787-789
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Passive Mode Locking of a Self-frequency-doubling Yb:Yal3 (BO3)4 Laser
Optics Letters 27, 6() 436-438
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Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature
Nuclear Instruments and Methods in Physics Research: Section B 190() 782-786
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Ion-beam-produced Damage and its Stability in AIN Films
Journal of Applied Physics 92, 7() 3554-3558
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How Nanocavities in Amorphous Si Shrink Under Ion Beam Irradiation: An in situ Study
Applied Physics Letters 81, 14() 2617-2619
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In Situ Neutron Diffraction Study (300-1273 K) of Non-Stoichiometric Strontium Ferrite SrFeOx
Journal of Physics and Chemistry of Solids 63() 2085-2092
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15th international conference on Ion-Beam Analysis (IBA-15): 12th AINSE conference on Nuclear Techniques of Analysis (NTA-12)
Nuclear Instruments and Methods in Physics Research: Section B 190, 1-4() vii-viii
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Nanometer Patterning of Epitaxial CoSi2 on Silicon-on-Insulator Substrates
Microelectronic Engineering 60() 183-190
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Self-Assembly Patterning of Epitaxial CoSi2 Nano-Structures
Microelectronic Engineering 64() 443-447
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Measurement and Uncertainties of Energy Loss in Silicon over a Wide Z1 Range using Time of Flight Detector Telescopes
Nuclear Instruments and Methods in Physics Research: Section B 195() 133-146
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Structural disorder in ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5() 787-789

Performance characteristics of lithium ion cells at low temperatures
IEEE Aerospace and Electronic Systems Magazine 17, 12() 16-20
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Measurements of Si Ion Stopping in Amorphous Silicon
Nuclear Instruments and Methods in Physics Research: Section B 190() 84-88
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Enhancing Oxygen Recovery from Ilmenite by Extended Milling
Materials Science and Engineering A 336() 143-149
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Reductive Growth of Nanosized Ligated Metal Clusters on Silicon Nanowires
Inorganic Chemistry 41, 17() 4331-4336
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On the Nature of Radiative Recombination in GaAsN
Applied Physics Letters 81, 23() 4368-4370
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Microstructure and Field Emission Properties of Coral-Like Carbon Nanotubes
Applied Physics Letters 81, 26() 5024-5026
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Formation of Silicon Carbide Nanotubes and Nanowires via Reaction of Silicon (from Disproportionation of Silicon Monoxide) with Carbon Nanotubes
Journal of the American Chemical Society 124() 14464-14471
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Aerodynamic Damping of Randomly Excited Plates in Stationary and Moving Air
Journal of Sound and Vibration 253, 4() 795-805
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Molecular Effect in Semiconductors under Heavy-Ion Bombardment: Quantitative Approach Based on the Concept of Nonlinear Displacement Spikes
Nuclear Instruments and Methods in Physics Research: Section B 194() 323-332
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Threshold Stoichiometry for Beam Induced Nitrogen Depletion of SiN
Nuclear Instruments and Methods in Physics Research: Section B 190() 428-432
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Unique Capabilities of Heavy Ion Elastic Recoil Detection with Gas Ionization Detectors
Nuclear Instruments and Methods in Physics Research: Section B 190() 393-396
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Epitaxial CoSi2-Nanostructures: An approach to silicon nanoelectronics
Microelectronic Engineering 64() 163-171
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Photoluminescence characterization of beryllium-implanted 6H-silicon carbide
Solid State Communications 121, 2-3() 67-71
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A Model for the Growth of Bamboo and Skeletal Nanotubes: Catalytic Capillarity
Journal of Crystal Growth 240, 1-2() 164-169
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Ultrafast Trapping Times in Ion Implanted InP
Journal of Applied Physics 92, 5() 2420-2423
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Single Crystal Si Layers on Glass Formed by Ion Cutting
Journal of Applied Physics 92, 6() 3388-3392
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Large-quantity Production of High-yield Boron Nitride Nanotubes
Journal of Materials Research 17, 8() 1896-1899
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Silicon Detector Response to Heavy Ions at Energies of 1-2MeV/amu
Nuclear Instruments and Methods in Physics Research: Section B 190() 387-392
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Structural Characterization of Amorphised InAs with Synchrotron Radiation
Nuclear Instruments and Methods in Physics Research: Section B 190() 851-855
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Optical Studies of Ion-Implantation Centres in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 186() 1-9
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Accurate Depth Profiling Through Energy-Dependent Pulse Height Deficit Compensation in Gas Ionization Detectors
Nuclear Instruments and Methods in Physics Research: Section B 190() 397-401
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A Systematic Study of the Pulse Height Deficit in Propane-Filled Gas Ionization Detectors
Nuclear Instruments and Methods in Physics Research: Section A 483() 676-688
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Crystal Size and Oxygen Segregation for Polycrystalline GaN
Journal of Applied Physics 92, 6() 3397-3403
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Growth Activation of ZnO Layers with H2O Vapor on a face of Sapphire Substrates by Metalorganic Molecular-Beam Epitaxy
Physica Status Solidi B (On-line) 192() 224-229
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CdO Epitaxial Layers Grown on (001) GaAs Surfaces by Metalorganic Molecular-Beam Epitaxy
Journal of Crystal Growth 237() 518-522
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H2O-Vapor-Activated Growth of ZnO on a-Sapphire Substrate with Metalorganic Molecular-Beam Epitaxy
Japanese Journal of Applied Physics 41() 2851-2854
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Channeling Energy Loss of O Ions in Si: The Barkas Effect
Nuclear Instruments and Methods in Physics Research: Section B 193() 172-177
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Nitrogen-Doped p-Type ZnO Layers Prepared with H2O Vapor-Assisted Metalorganic Molecular-Beam Epitaxy
Japanese Journal of Applied Physics 41() L1281-L1284
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Impurity Gettering by Cavities in Si Investigated with the PAC Technique
Nuclear Instruments and Methods in Physics Research: Section B 190() 846-850
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Spherical Indentation of Compound Semiconductors
Philosophical Magazine A 82, 10() 1931-1939
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Contact-induced Defect Propagation in ZnO
Applied Physics Letters 80, 24() 4537-4539
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Indentation-induced Damage in GaN Epilayers
Applied Physics Letters 80, 3() 383-385
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In Situ Measurements of the Channeling Dependence of Ion-beam-induced Recrystallization in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 190() 772-776

Trap-Limited Migration of Vacancy-Type Defects in 7.5 keV H--Implanted Si
Applied Physics Letters 80, 9() 1577-1579
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Thermally Stimulated Luminescence in Ion-Implanted GaAs
Journal of Luminescence 96() 287-293
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PBII Deposition of Thick Carbon Coatings from a Cathodic Arc Plasma
Surface and Coatings Technology 156() 143-148
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Nanoindentation Studies of Brittle Thin Films on a Titanium Alloy Substrate
Journal of Materials Research 17, 4() 861-870
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The Effect of Crystal Orientation on Thermal Shock-induced Fracture and Properties of Ion Implated Sapphire
Nuclear Instruments and Methods in Physics Research: Section B 190() 751-755
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Analysis of One-Dimensional Photonic Bandgap Structures with Pseudonoise Organization of Layers in the Primitive Periodic Cell
Microwave and Optical Technology Letters 32, 5() 370-373
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Self-Assembly Patterning of Epitaxial CoSi2 Wires
Microelectronic Engineering 60() 239-245
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Platinum Atom Location on the Internal Walls of Nanocavities Investigated by Ion Channeling Analysis
Nuclear Instruments and Methods in Physics Research: Section B 190() 606-610
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Thermal Stability of Ion-implanted Hydrogen in ZnO
Applied Physics Letters 81, 21() 3996-3998
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Rotational Aerophones
Journal of the Acoustical Society of America 111, 3() 1189-1196
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On the Pulsed Anodic Oxidation of n+-InP
Electrochemical and Solid-State Letters 5, 6() G41-G44

Dynamics of the Ion Beam Induced Nitridation of Silicon
Journal of Vacuum Science and Technology A 20, 4() 1261-1269

Harmonic? Anharmonic? Inharmonic?
American Journal of Physics 70, 12() 1205-1207
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Bell Clapper Impact Dynamics and the Voicing of a Carillon
Journal of the Acoustical Society of America 111, 3() 1437-1444
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Electrode Surface Profile and the Performance of Condenser Microphones
Journal of the Acoustical Society of America 112, 6() 2779-2785

Condenser Microphones - A Tutorial
Acoustics Australia 30, 3() 109-113
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Random Stopping Power and Energy Straggling of O-16 Ions into Amorphous Si Target
Nuclear Instruments and Methods in Physics Research: Section B 190() 79-83

(89 publications)

Conference paper

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Study of Diffusivity and Electrical Properties of Zr and Hf in Silicon
Semiconductor Silicon 2002 ?, ?() 440-451
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Diffusion and Defect formation in Ion Implanted Si nanostructures
International Conference on Ion Implantation Technology 2002 ?, ?() 682
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Australian Aboriginal Musical Instruments - The Bullroarer
Australian Acoustical Society Conference (Acoustics 2002) ?, ?() 186-189
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Impurity Free Intermixing for Optoelectronic Device Integration
Integrated Optoelectronics ?, ?() 89-105

(4 publications)

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