EME publications 2001

2001

Note: To search this listing with your browser
press ctrl-f or apple-f

Book


Access to Scientific Journals in Australian Libraries
National Library of Australia, Canberra, Australia (2001) 58

(1 publications)

Book chapter


Semiconductors: Irradiation Effects
Encyclopaedia of Materials Science and Technology
Elsevier, Netherlands (2001) tba

(1 publications)

Journal article

, ,
Preparation of Polycrystalline Silicon Films by Aluminium Induced Crystallization at Low Temperatures
Journal of Inorganic Materials (Wuji Cailiao Xuebao) 16, 4() 688-692
, , , , , , , ,
Implantation-induced Disorder in Amorphous Ge: Production and Relaxation
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 21-25

Surface Plasma Passivation of the Polycrystalline Silicon Thin Films by using NH3 or N2O Gas
Journal of Inorganic Materials (Wuji Cailiao Xuebao) 16, 4() 693-696
,
Electrical Transients in the Ion-Beam-Induced Nitridation of Silicon
Applied Physics Letters 78, 22() 3445-3447
, , , , , ,
Structural characterisation of amorphised compound semiconductors
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 280-285
,
Wavelength Insensitive Asymmetric Triple Mode Evolution Couplers
Optics Communications 187() 129-133
, , ,
Efficiency of dislocations and cavities for gettering of Cu and Fe in silico
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 154-158
, , , , , , , , , , , , ,
Doping of Silicon Carbide by Ion Implantation
Materials Science Forum 353-356() 549-554
, ,
Self-Ion-induced Swelling of Germanium
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 193-196
, , , , , , ,
Free-Standing Single Crystal Silicon Nanoribbons
Journal of the American Chemical Society 123() 11095-11096
, , , , ,
Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Physical Review B 64() 195211/1-10
, , , , , , , ,
Fusion around the barrier for 7Li + 12C
Pramana 57, No. 1() 195 - 198
, , , , , ,
Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys
Applied Physics Letters 79, 12() 1810-1812
, , , , , , , , , ,
Solubility Limit and Precipitate Formation in Al-doped 4H-SiC Epitaxial Material
Applied Physics Letters 79, 13() 2016-2018
, , , , , , ,
The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
Journal of Crystal Growth 222() 786-790
, , , , , ,
Channeling Measurements of Ion Implantation Damage in 4H-SiC
Materials Science Forum 353-356() 595-598
, ,
The crystallisation of deep amorphous wells in silicon produced by ion implantation
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 164-168
, ,
Defect Formation Due to the Crystallization of Deep Amorphous Volumes Formed in Silicon by Mega Electron Volt (MeV) Ion Implantation
Journal of Materials Research 16, 11() 3229-3237
, , , , , , , , , ,
Carrier transfer between V-grooved quantum wire and vertical quantum well
Physics Letters A 280() 77-80
, , , , ,
Application of Selective Implantation in AIGaAs/InGaAs/GaAs Pseudomorphic Single Quantum Wire Structures
Nanotechnology 1() 389-392
, , ,
Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique
Journal of Physics: Condensed Matter 13, 18() 3923-3930
, ,
Flow Structures Generated by Pressure-Controlled Self-Oscillating Reed Valves
Journal of Sound and Vibration 247, 2() 213-226
, , ,
Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions
Journal of Applied Physics 90, 8() 3867-3872

Epitaxy on GaN bulk crystals
Opto-Electronics Review 9, 2() 125-128
, ,
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16() 2561-2563
,
Low energy O2 + and N2 + beam-induced profile broadening effects in Si
Journal of Vacuum Science and Technology A 19, 3() 893-898
, , ,
Synthesis of III-Nx-V1-x thin films by n ion implantation
Materials Research Society Symposium Proceedings 650()
,
Interface phonons in CdSe/ZnSe self-assembled quantum dot structures
Physica Status Solidi. B: Basic Research 224, 1() 165-168

Implantation-produced structural damage in InxGa1-xN
Applied Physics Letters 79, 5() 602-604
, , , , ,
Interactions of point defects and impurities with open volume defects in silicon
Materials Research Society Symposium Proceedings 647() O2.4.1-O2.4.11

Crystalline-to-amorphous phase transformation in ion-irradiated GaAs
Physical Review B 64, 15() 1552021-1552026
,
Impurity-free intermixing of GaAs/AIGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5() 1962-1966
, , ,
Mechanical deformation of crystalline silicon during nanoindentation
Materials Research Society Symposium Proceedings 649() Q8.10.1-Q8.10.6
,
Enhanced gas-solid reaction after extended milling
Journal of Materials Science Letters 20, 20() 1849-1851
,
Mechanochemical Processing of Gold-Bearing Sulphides
Minerals Engineering 14, 3() 341-347
,
Novel Process for Enhanced Lunar Oxygen Recovery
Journal of Materials Science 36() 2343-2348
, , ,
X-ray diffraction analysis on gallium-indium interdiffusion in quantum dot superlattices
Chinese Physics Letters 18, 6() 810-812
, , , , , , , , , , ,
Interaction of Defects and Metals with Nanocavities in Silicon
Nuclear Instruments and Methods in Physics Research: Section B 178() 33-43
, , ,
Acoustic Impedance Spectra of Classical and Modern Flutes
Journal of Sound and Vibration 243, 1() 127-144
, , , , , ,
Direct Observation of Irradiation-Induced Nanocavity Shrinkage in Si
Applied Physics Letters 79, 21() 3416-3418
, , , ,
Mechanical properties of As-grown and ion-beam-modified GaN films
Materials Research Society Symposium Proceedings 649() Q5.5.1-Q5.5.6
, , , , , , , , ,
Formation of diluted III-V nitride thin films by N ion implantation
Journal of Applied Physics 90, 5() 2227-2234
, , , , , ,
Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy
Physica Status Solidi B (On-line) 188, 2() 681-685
, , , ,
Implantation-Produced Structural Damage in InxGa1-xN
Applied Physics Letters 79, 5() 602-604
, , , ,
High-dose ion implantation into GaN
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 214-218

On Defects Created in 45 keV H--Implanted n-type Cz Si: a Fluence Dependence and Isochronal Annealing Study
Physica B 308-310() 190-192
,
Effect of Stress on Impurity-free quantum well intermixing
Electrochemical and Solid-State Letters 4() G11-G13

Effect of Rapid Thermal Annealing on the Electrical Properties of Ion-Beam-Synthesized Oxide Layers Using 12 keV O2+ Bombardment of Si
Surface and Interface Analysis 31() 1087-1093
, , , ,
Possibility of improved frequency response from intermixed quantum-well devices
Superlattices and Microstructures 29, 2() 105-110
, , ,
Electrically Steerable Lasers using Wide-Aperture VCSELs
IEEE Photonics Technology Letters 13, 6() 544-546
,
Impurity free intermixing of GaAs/AlGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5() 1962-1966
,
Low energy O2+ and N2+ beam-induced profile broadening effects in Si
Journal of Vacuum Science and Technology A 19, 3() 893-898
, , , , ,
Physical and optical characterisation of Ge-implanted silica
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 637-640
, , , ,
Structural Modifications in Amorphous Ge Produced by Ion Implantation
Nuclear Instruments and Methods in Physics Research: Section B 178() 192-195
, ,
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16() 2561-2563
,
Photoluminescence from Si Nanocrystals ini Silica: The Effect of Hydrogen
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 422-425
, ,
Grating Structures with Symmetric Fractionally Organized Gaps
Microwave and Optical Technology Letters 31, 3() 223-229
, ,
Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 235-240
, ,
Acoustics of a Small Australian Burrowing Cricket: The Control of Low-Frequency Pure-Tone Songs
Journal of Experimental Biology 204() 2827-2841
, ,
Optical Fibers with Low Nonlinearity and Low Polarization-Mode Dispersion for Terabit Communications
Optics and Laser Technology 33() 285-291
, , ,
Role of ZnS Buffer Layers in Growth of Zincblende ZnO on GaAs Substrates by Metalorganic Molecular-Beam Epitaxy
Journal of Crystal Growth 221() 435-439
, , , ,
Electrical isolation of GaN by MeV ion irradiation
Applied Physics Letters 78, 7() 943-945
,
Effect of Hydrogen on the Photoluminescence of Si Nanocrystals Embedded in a SiO2 Matrix
Applied Physics Letters 78, 9() 1225-1227
,
Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in SiO2
Applied Physics Letters 78, 13() 1912-1914
, , , , , ,
Experimental Analysis of Reflected Modes in a Multimode Strained Grating
Microwave and Optical Technology Letters 28, 1() 4-8
, , , ,
Mechanical Deformation in Silicon by Micro-indentation
Journal of Materials Research 16, 5() 1500-1507
, , , , ,
Effects of Ambient Pressure on Silicon Nanowire Growth
Chemical Physics Letters 334() 229-232

Recent Progress in the Acoustics of Wind Instruments
Acoustical Science and Technology 22, 3() 169-176
, , , , ,
Deformation Behavior of Ion-Beam-Modified GaN
Applied Physics Letters 78, 2() 156-158
, , , , ,
Cathodoluminescence Depth Profiling of Ion-Implanted GaN
Applied Physics Letters 78, 1() 34-36

Amorphous Zone Evolution in Si During Elevated Temperature Ion Bombardment
Nuclear Instruments and Methods in Physics Research: Section B 174() 130-136
, , ,
Fabrication of Epitaxial CoSi2-Nanowires
Applied Physics Letters 79, 6() 824-826
, , , , , , ,
Nanometer Patterning of Thin CoSi2 Films by Application of Local Stress
Microelectronic Engineering 55() 177-182
, , , ,
Effects of excitation density on cathodoluminescence from GaN
Applied Physics Letters 79, 14() 2154-2156
, ,
Ion Implantation into GaN
Materials Science and Engineering R-Reports 33() 51-107
, , , , ,
Ion-beam-induced reconstruction of amorphous GaN
Physical Review B 63() 113202-1-4
, , , ,
The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN
Nuclear Instruments and Methods in Physics Research: Section B 178() 209-213
, , , , ,
Effect of ion species on the accumulation of ion-beam damage in GaN
Physical Review B 64() 035202/1-10
, , ,
"A High Nonlinearity Elliptical Fiber for Applications in Raman and Brillouin Sensors"
Applied Optics 33() 293-298
, , ,
Reflectivity Spectra Evolution in Grating Structures with Fractionally Organized Gaps
Microwave and Optical Technology Letters 29, 1() 42-45
, , , , , , ,
Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing
Infrared Physics and Technology 42() 171-175
, , , , , , , ,
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4() 2351-2356
, ,
Wave Propagation on Helices and Hyperhelices: A Fractal Regression
Proceedings of the Royal Society of London Series A: Mathematical, Physical and Engineering Sciences 457() 33-43

Vibrato in Music
Acoustics Australia 29, 3() 97-102
, , , , , , , ,
Photoluminescence study of beryllium implantation induced intrinsic defects in 6H-silicon carbide
Physica B 308() 710-713
, , , , ,
Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler
Nuclear Instruments and Methods in Physics Research: Section B 173() 528-532
, , , , , ,
Structure and Low-temperature Thermal Relaxation of Ion-implanted Germanium
Journal of Synchrotron Radiation 8() 773-775
, , ,
Ion Beam Modification of Thermal Stress Resistance of MgO Single Crystals with Different Crystallographic Faces
Nuclear Instruments and Methods in Physics Research: Section B 178() 138-143
, , , , , , ,
Structural-relaxation-induced Bond Length and Bond Angle Changes in Amorphized Ge
Physical Review B 63() 073204/1-4
, , ,
Irradiation-induced defect configurations in Ge substrates characterised with perturbed angular correlation
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 51-55
, , , , ,
Electron and trap dynamics in As-ion-implanted and annealed GaAs
Applied Physics Letters 78, 12() 1667-1669
, , , ,
Single-Crystalline Rocksalt CdO Layers Grown on GaAs (001) Substrates by Metalorganic Molecular-Beam Epitaxy
Applied Physics Letters 79, 4() 470-472

(111 publications)

Conference paper

, , , , , , , ,
Interactions of Point Defects and Impurities With Open Volume Defects in Silicon
Materials Research Society Meeting Fall 2000 ?, ?() 02.4.1-02.4.11
, , , , , , ,
Synthesis of III-Nx-V1-x thin films by N ion implantation
Materials Research Society Meeting Fall 2000 ?, ?() 013.3.1/R8.3.1-013.3.6/R8.3.6
, ,
Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities
199th Meeting of the Electrochemical Society ?, ?() 147-155
, , , , ,
Ion Beam Damage Processes in GaN
III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) ?, ?() 150-160
, , , , , ,
Mechanical Properties of As-Grown and Ion-Beam-Modified GaN Films
Materials Research Society Meeting Fall 2000 ?, ?() Q5.5.1-Q5.5.6
, , , ,
Mechanical Deformation of Crystalline Silicon During Nanoindentation
Materials Research Society Meeting Fall 2000 ?, ?() Q8.10.1-6

(6 publications)

Updated:  16 January 2019/ Responsible Officer:  Director, RSPE/ Page Contact:  Physics Webmaster