EME publications 2000

2000

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Journal article

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Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon
Journal of Applied Physics 88() 1312-1318
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Effect of implant temperature on extended defects created by ion implantation in silicon
Defects and Diffusion Forum Part A: Defect and Diffusion Forum 183, 1() 163-169
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Preferential Amorphization and Defect Annihilation at Nanocavities in Silicon Durion Ion Irradiation
Applied Physics Letters 77() 4280-4282
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Ion Beam Induced Epitaxy Experiments in Silicon under Channeling and Random Alignments
Nuclear Instruments and Methods in Physics Research: Section B 161-163() 505-509
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Zinc and Group V Element Co-Implantation in Indium Phosphide
Nuclear Instruments and Methods in Physics Research: Section B 168() 65-71
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Nitrogen-induced enhancement of the free electron concentration in Sulfur implanted GaNxAs1-x
Applied Physics Letters 77() 2858-2860
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Application of high energy implantation in tuning the detection wavelength of quantum well infrared photodetectors
Journal of Environmental Chemical Engineering 1() 88-89

Highly chemical reactive ion etching of gallium nitride
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1()
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Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
Journal of Applied Physics 88() 2519-2522
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Correlation of Energy-loss and collected-charge in Si DE detectors: measurements using an Enge spectrometer
Nuclear Instruments and Methods in Physics Research: Section B 164-165() 186-190
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Mechanochemical Formation of Metal-Ceramic Composites
Journal of the American Chemical Society 83() 33-40
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Ion Beam Induced Amorphous-Crystalline Phase Transition in Si: Quantitative Approach
Nuclear Instruments and Methods in Physics Research: Section B 168() 375-388
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Simplifying position-sensitive gas-ionization detectors for heavy ion elastic recoil detection
Nuclear Instruments and Methods in Physics Research: Section B 161-163() 19-28
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New design features of gas ionization detectors used for elastic recoil detection
Nuclear Instruments and Methods in Physics Research: Section A 447() 536-543
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Oscillating Reed Valves - An Experimental Study
Journal of the Acoustical Society of America 108() 400-406
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Imaging Charge Trap Distributions in GaN Using Environmental Scanning Electron Micrsocopy
Applied Physics Letters 77() 1342-1344
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Characterization of Silicon Oxynitride Films using Ion Beam Analysis Techniques
Nuclear Instruments and Methods in Physics Research: Section B 170() 461-466
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Solubilization of Zircon by Mechanically Induced Solid-State Cation Exchange with Alkaline Earth Oxides
Transactions of the Institution of Mining and Metallurgy Section C: Mineral Processing and Extractive Metallurgy 109() C57-C60
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Mechanical Activation of Coal
Fuel Processing Technology 68() 75-82
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Novel Route to Submicrometer Tungsten Carbide
AIChE Journal 46() 68-71
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The use of micro-raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1()
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Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147, 5() 1950-1956
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Exciton kinetics in self-assembled CdSe/ZnSe quantum dots
Journal of Environmental Chemical Engineering () 87-
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Using exciton dynamics to probe the internal structure of CdSe/ZnSe self-assembled quantum dots
Physica Status Solidi. B: Basic Research 221, 1() 55-58
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Phonons and exciton recombination in CdSe/ZnSe self-assembled quantum dots
Applied Physics Letters 77, 12() 1813-1815

Measurement of the SMC muon beam polarization using the asymmetry in the elastic scattering off polarized electrons
Nuclear Instruments and Methods in Physics Research: Section A 443, 1() 1-19
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Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures
Japanese Journal of Applied Physics 39, 9 A() 5124-5127
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The micro-photoluminescence of a single V-groove GaAs/AlGaAs quantum wire
Wuli Xuebao/Acta Physica Sinica 49, 9() 1812-1813
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The use of micro-raman spectroscopy to monitor high-pressure hightemperature annealing of ion-implanted GaN films
Materials Research Society Symposium Proceedings 595() W11461-W11466
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Ion-beam-induced dissociation and bubble formation in GaN
Applied Physics Letters 77, 22() 3577-3579
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Raman spectral study of silicon nanowires: High-order scattering and phonon confinement effects
Physical Review B 61, 24() 16827-16832

Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots
Physical Review B 62, 4() 2737-2742

The physiological demands of wind instrument performance
Acoustics Australia 28, 2() 53-56

A class of chaotic bird calls?
Journal of the Acoustical Society of America 108, 2() 821-826
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Performance comparison of GaAs/AlGaAs quantum well infrared photodetectors grown by MOCVD and MBE
Journal of Environmental Chemical Engineering 21, 5() 441-444
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Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector
Journal of Environmental Chemical Engineering 19, 1() 25-28

A history of musical acoustics research in Australia
Acoustics Australia 28, 3() 97-101

Properties of ion implanted epitaxial CoSi2/Si(1 0 0) after rapid thermal oxidation
Nuclear Instruments and Methods in Physics Research: Section B 164() 1004-1009
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Dynamic scaling of plasma etched InP surface
Journal of Environmental Chemical Engineering () 201-204

Highly chemical reactive ion etching of gallium nitride
Materials Research Society Symposium Proceedings 595() W11761-W11766
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Photoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Micrsocopy Measurements on MeV Self-Ion Implanted and Annealed n-type Silicon
Journal of Applied Physics 88() 2309-2317
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Ion-Dose-Dependent Microstructure in Amorphous Ge
Physical Review B: Condensed Matter and Materials 61() 12 586-12 589
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Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147() 1950-1956
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Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells
Materials Research Society Symposium Proceedings 607() 491-502
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Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells
Surface and Interface Analysis 29() 754-760
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Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers
Journal of Applied Physics 88() 5255-5261
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Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition
Applied Physics Letters 77() 696-698
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Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing
Applied Physics Letters 76() 837-839
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Enhanced Dissolution Following Extended Milling
AIChE Journal 46() 666-669
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Simultaneous Hydrogen Detection with an ERD Gas Ionization Detector
Nuclear Instruments and Methods in Physics Research: Section B 161-163() 231-234
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On the Segregation of Ca at SiO2/Si Interface During Oxygen Ion Bombardment
Surface and Interface Analysis 29() 160-167
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Segregation Effects of Li, K and F in Si During Depth Profiling by Oxygen Ions
Journal of Applied Physics 87() 2178-2184
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Intrinsic Defect-Related Blue-Violet and Ultraviolet Photoluminescence from Si+-Implanted Fused Silica
Applied Physics Letters 76() 2062-2064
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The Effect of Ion-Irradiation and Annealing on the Luminescence of Si Nanocrystals in SiO2
Nuclear Instruments and Methods in Physics Research: Section B 166-167() 851-856
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Solid-State Formation of Carbon and Boron Nitride Nanotubes
Materials Science Forum 343-346() 63-67
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Transmission Electron Microscopy Observation of Deformation Microstructure under Spherical Indentation in Silicon
Applied Physics Letters 77() 3749-3751
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Strain Development and Damage Accumulation During Neon Ion Implantation into Silicon at Elevated Temperatures
Journal of Applied Physics 88() 1771-1775
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Heavy-ion elastic-recoil detection ananlysis of doped-silica films for integrated photonics
Nuclear Instruments and Methods in Physics Research: Section B 161() 624-628
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Damage Accumulation in Si Crystal During Ion Implantation at Elevated Temperatures: Evidence of Chemical Effects
Journal of Applied Physics 87() 8385-8388
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Photoluminescence in delta-doped InGaAs/GaAs single quantum wells
Journal of Applied Physics 87() 3896-3899
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A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells
Journal of Applied Physics 88() 5252-5254
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Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
Physical Review B 61() 8306-8311
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Strong photosensitivity in tin-doped silica films
Electronics Letters 36, 9() 842-843
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Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
Journal of Applied Physics 87() 1566-1568
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Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures
Physics Letters A 271() 213-216
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Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing
Japanese Journal of Applied Physics 39() 1687-1689
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Investigation of AlGaAs/GaAs V-grooved Quantum Wire Infrared
Japanese Journal of Applied Physics 39() 5124-5127
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Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers
Applied Physics Letters 76() 1306-1308
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GaAs delta-doped layers in Si for evaluation of SIMS depth resolution
Surface and Interface Analysis 29() 362-268
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Photon-stimulated desorption of hydrogen ions from semiconductor surfaces: evidence for direct and indirect processes
Fizika A 8() 275-284
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Selective photon-stimulated desorption of hydrogen from GaAs surfaces
Physical Review Letters 84() 2255-2258
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Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi
Physical Review B 62() 12 882-12 887
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Ion beam induced dissociation and bubble formation in GaN
Applied Physics Letters 77() 3577-3579
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Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment
Journal of Applied Physics 88() 5493-5495
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Comparison of the Annealing Characteristics of Resistivity and Vacancy Defects for Implant Isolated n-type GaAs
Journal of Applied Physics 87, 2() 663-
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Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells
Applied Physics Letters 77() 2867-2869
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Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/A10.3Ga0.7As Multiple Quantum Wells
Materials Research Society Symposium Proceedings 607() 217-222
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High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering
Journal of Applied Physics 87() 2736-2741
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Nanoindentation of Epitaxial GaN Films
Applied Physics Letters 77() 3373-3375
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Ion-Beam-Induced Porosity of GaN
Applied Physics Letters 77() 1455-1457
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Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN
Applied Physics Letters 76() 3899-3901
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Transport and quantum electron mobility in the modulation Si d-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy
Applied Physics Letters 77() 999-1001

(86 publications)

Conference paper

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Charge Contrast in SE Images Obtained Using the ESEM
Institute of Physics Conference No 165 (2000) ?, ?() 275-276
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On the Angular Dependence of Profile Broadening in Silicon Under Oxygen and Nitrogen Bombardment
Secondary Ion Mass Spectrometry (SIMS 1999) ?, ?() 545-548

(2 publications)

Journal short contribution (non refereed)


Al and Ag diffusion study in alpha-titanium
Applied Physics A: Materials Science and Processing 71, 2() 169-174

(1 publications)

Journal article (non-refereed)

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Micro- and macrostructure of implantation-induced disorder in Ge
Nuclear Instruments and Methods in Physics Research: Section B 161-163() 1033-1037

(1 publications)

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