EME publications 1999

1999

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Journal article

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Photoluminescence of selectively Si d-doped In0.2Ga0.8As heterostructure at 77K
Journal of Environmental Chemical Engineering 20, 7() 573-577
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Photoluminescence of InGaAs/GaAs with double lights
Journal of Environmental Chemical Engineering 20, 8() 656-661
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Radiative recombination in p-type d-doped layers in GaAs
Physical Review B 60, 4() R2193-R2196
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Photomodulation spectroscopy of Zn d-doped GaAs
Griffith Asia Quarterly () 519-521
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Photoluminescence of Si d-doped InGaAs/GaAs heterostructures with double beam excitation
Griffith Asia Quarterly () 516-518
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Impurity-free interdiffusion in GaAs/Al 0.54Ga 0.46As multiple quantum wells capped with PECVD SiO x: Effect of nitrous oxide flow
Griffith Asia Quarterly () 361-364
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Characterization of low-temperature PECVD silicon dioxide films
Materials Research Society Symposium Proceedings 555() 197-202

Characterization of thin films using heavy ion beams
Bulletin of Materials Science 22, 3() 601-606
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Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions
Griffith Asia Quarterly () 505-508
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Ion irradiation of GeSi/Si strained-layer heterostructures
Materials Research Society Symposium Proceedings 540() 55-65

Selective intermixing of ion irradiated semiconductor heterostructures
Materials Research Society Symposium Proceedings 540() 15-26
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Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices
Griffith Asia Quarterly () 352-354
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Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation
Griffith Asia Quarterly () 355-357

Acoustics of the avian vocal tract
Journal of the Acoustical Society of America 105, 1() 35-49
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Interdiffused quantum-well infrared photodetectors for color sensitive arrays
Applied Physics Letters 75, 7() 923-925
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A dlts investigation of the effect of ion mass, fluence and energy on the introduction of a higher-order vacancy cluster in noble gas ion bombarded n-Si
Materials Research Society Symposium Proceedings 540() 121-126
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An XPS and glancing angle RBS investigation of metallic impurity contamination of magnetron sputter etched Si
Journal of Environmental Chemical Engineering , 291 SUPPL.2() 365-367
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Ambient-Temperature Mechanochemical Formation of Titanium Nitride-Alumina Composites from TiO2 and FeTiO3
Journal of the American Ceramic Society 82, 9() 2332-2336
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Ultra-Micro-Indentation of Silicon and Compound Semiconductors with Spherical Indenters
Journal of Materials Research 14, 6() 2338-2343
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The Role of Oxygen on the Stability of Gettering of Metals to Cavities in Silicon
Applied Physics Letters 75, 16() 2424-2426

Multicarbide Formation Direct from Concentrate
Journal of Materials Science Letters 18() 141-143

Non-Thermal Production of Tungsten from Scheelite
Materials Science and Technology 15() 456-458

Ambient Temperature Formation of (Ta, Nb)C and (Ta, Nb)N
Journal of Materials Science 34() 21-27

Room Temperature Reduction of Scheelite (CaWO4)
Journal of Materials Research 14, 2() 619-627
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Mechanochemical synthesis of boron nitride nanotubes
Materials Science Forum () 173-178
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Diffusion and Transient Trapping of Metals in Silicon
Physical Review B 59, 11() 7990-7998
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Instability of Nanocavities in Amorphous Silicon
Applied Physics Letters 74, 16() 2313-2315
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Low-Temperature Thermopower in Nanostructured Silver
Applied Physics Letters 75, 1() 136-138
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Structural Changes in Ultra-High-Dose Self-Implanted Crystalline and Amorphous Silicon
Nuclear Instruments and Methods in Physics Research: Section B 148() 268-272
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Radiative recombination in p-type delta doped layers in GaAs
Physical Review B 60() R2193-R2196
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Local structures of free-standing AlGaN thin films studied by extended x-ray absorption fine structure
Applied Physics Letters 75() 4097-4099
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Local structures of Ga atoms in Amorphous Silicon and Hydrogenated Amorphous Silicon Before and After Synchrotron X-ray Irradiation
Applied Physics Letters 75, 21() 3282-3284

Changes in interdiffusion associated with thermally oxidized GaAs
Griffith Asia Quarterly () 218-221

Proton irradiation effects on the intersubband transition in GaAs/AlGaAs multiple quantum wells with bulk or superlattice barriers
Applied Physics Letters 75, 4() 525-527
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Intermixing induced resonance shift in GaAs/Al xO y DBR resonators
Griffith Asia Quarterly () 365-368
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Fabrication and characterization of delta-doped In 0.2Ga 0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy
Griffith Asia Quarterly () 140-143
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Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence
Griffith Asia Quarterly () 187-190
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Quantum dot exciton dynamics through a nanoaperture: Evidence for two confined states
Physical Review Letters 83, 14() 2797-2800

Spin asymmetries A1 of the proton and the deuteron in the low x and low Q2 region from polarized high energy muon scattering
Physical Review D 60, 7() 1-Sep
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Enhancement of the etch rate of LiNbO3 by prior bombardment with MeV O2+ ions
Journal of Vacuum Science and Technology A 17, 6() 3358-3361

Large streamer chamber muon tracking detector in a high-flux fixed-target application
Nuclear Instruments and Methods in Physics Research: Section A 435, 3() 354-374
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Comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy
Griffith Asia Quarterly () 348-351
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Application of selective implantation induced intermixing on V-grooved AlGaAs/GaAs coupled quantum wire
Griffith Asia Quarterly () 513-515
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TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wells
Griffith Asia Quarterly () 358-360
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Tuning of detection wavelength of GaAs/AlGaAs quantum-well IR photo-detectors by thermal interdiffusion
Griffith Asia Quarterly () 128-130
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Thermal fatigue of ion implanted magnesium oxide crystals
Nuclear Instruments and Methods in Physics Research: Section B 148, 1-Apr() 773-777
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Thermal stress resistance of ion implanted sapphire crystals
Nuclear Instruments and Methods in Physics Research: Section B 147, 1-Apr() 221-225
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Carbothermic reduction of llmenite (FeTiO3) and rutile (TiO2)
Metallurgical and Materials Transactions B 30, 6() 1075-1082

Instability of nanocavities in disordered and amorphous silicon under ion irradiation
Materials Research Society Symposium Proceedings 540() 127-132

Implant isolation study of In0.53Ga0.47As
Griffith Asia Quarterly () 29-32

Composition-dependent bond lengths in crystalline and amorphized GexSi1-x alloys
Physical Review B 60, 15() 10831-10836

Progress in Reactive Ion Etching of epitaxial GaN
Journal of Environmental Chemical Engineering () 171-174

Sealing Method of Dry-Etched AlAs/GaAs Top Mirrors in Vertical Cavity Surface Emitting Lasers
Electrochemical and Solid-State Letters 2, 2() 83-85

Growth of high quality, MOCVD grown Ga-polar GaN layers on GaN substrates after novel reactive ion etching
Physica Status Solidi (A) Applied Research 176, 1() 573-577
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Observation of state filling effects in the carrier dynamics of self-assembled quantum dots
Griffith Asia Quarterly () 344-347

Scanning ion deep level transient spectroscopy
Nuclear Instruments and Methods in Physics Research: Section B 158, 1() 464-469
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Inter-facet noise correlation measurement as a diagnostic tool for semiconductor laser studies
Griffith Asia Quarterly () 236-239

Chemical and complementary role of fluorine in a chlorine-based reactive ion etching of GaN
Physica Status Solidi (A) Applied Research 176, 1() 755-758

Final polishing of Ga-polar GaN substrates using reactive ion etching
Journal of Electronic Materials 28, 12() 1448-1451
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Optical properties of self-organized InGaAs/GaAs quantum dots in field-effect structures
Materials Research Society Symposium Proceedings 536() 269-274
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Nonlinear optical properties of ion-implanted GaAs
Griffith Asia Quarterly () 151-153
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Ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers
Griffith Asia Quarterly () 105-108
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Asymmetric current injection for polarization stabilization in vertical-cavity surface-emitting lasers
Journal of Environmental Chemical Engineering () 47-48
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Improved designs of gas ionization detectors used for elastic recoil detection
Nuclear Instruments and Methods in Physics Research: Section B B 156() 236-243
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Vibration of Beams and Helices with Arbitrarily Large Uniform Curvature
Journal of Sound and Vibration 228() 305-332
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Blowing Pressure, Power and Spectrum in Trumpet Playing
Journal of the Acoustical Society of America 105() 874-881
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Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers
Journal of Applied Physics 85() 6786-6789
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Energy Sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As Quantum Wire
Superlattices and Microstructures 26, 5() 307-315
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Acoustics of the Avian Vocal Tract
Journal of the Acoustical Society of America 105() 35-49

The Nonlinear Physics of Musical Instruments
Reports on Progress in Physics 62() 723-764

Materials for Musical Instruments
Acoustics Australia 27() 5-9
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Refractive indices and thickness of optical waveguides fabricated by Si ion implantation into silica glass
Thin Solid Films 340() 233-236
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Defects Formed During 1 MeV Si Ion-Irradiation of GeSi/Si Strained Layer Heterostructures at Elevated Temperature
Nuclear Instruments and Methods in Physics Research: Section B B148() 206-210
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Thermal Fatigue of Ion Implanted Magnesium Oxide Crystals
Nuclear Instruments and Methods in Physics Research: Section B 148() 773-777
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Photon-stimulated desorption of H+ and H- ions from diamond surfaces: Evidence for direct and indirect processes
Physical Review B 59() 3203-3209
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Proton irradiation of n-type GaAs
Nuclear Instruments and Methods in Physics Research: Section B B148() 446-449
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Preferential Amorphization at Extended Defects of Self-Ion-Irradiated-Silicon
Physical Review Letters 82, 4() 771-774
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Structural Characterization of Amorphized InP: Evidence for Chemical Disorder
Applied Physics Letters 74, 12() 1713-1715
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Characterisation of ion-implantation-induced disorder in GaAs by EXAFS
Japanese Journal of Applied Physics 38, 38-1() 548-551
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Hydrogen Interaction with Implantation Induced Point Defects in p-type Silicon
Journal of Applied Physics 85, 5() 2562-2567
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Nonlinear Optical Properties of Semiconducting Nanocrystal in Fused Silica
Nuclear Instruments and Methods in Physics Research: Section B B148() 964-968
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Increased Dissolution of Ilmenite Induced by High-Energy Ball Milling
Materials Science and Engineering A 271/1-2() 485-490
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The effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2
Nuclear Instruments and Methods in Physics Research: Section B B148() 986-990
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Negative Photoconductivity in SiO2 Films Containing Si Nanocrystals
Applied Physics Letters 74, 26() 3987-3989
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Synthesis of boron nitride nanotubes at low temperatures using reactive ball milling
Chemical Physics Letters 299(3-4)() 260-264
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Nanoporous Carbon Produced by Ball Milling
Applied Physics Letters 74, 19() 2782-2784
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Mechanochemical Reactions in the System FETiO3-Si
Journal of Materials Research 13, 12() 3499-4503
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A solid-state process for formation of boron nitride nanotubes
Applied Physics Letters 74() 2960-2962
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Reversible Charging Effects in SiO2 Films Containing Si Nanocrystals
Applied Physics Letters 75, 7() 968-970
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Intermixing induced resonance shift in GaAs/AlxOy distributed Bragg resonators
Journal of Applied Physics 85() 7964-7966
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Nonlinear Optical Response of Ge Nanocrystals in a Silica Matrix
Applied Physics Letters 74, 2() 239-241
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Atomic Force Microscopy and High-Resolution RBS Investigation of the Surface Modification of Magnetron Sputter-Etched Si(111) in an Argon Plasma at Different Pressures
Surface and Interface Analysis 27() 881-888
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Electrical Characterization and Annealing Properties of Electrically Active Defects Introduced in n-Si During Sputter Etching in an Ar-plasma
Nuclear Instruments and Methods in Physics Research: Section B B148() 300-305
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On the Migration Behaviour of Metal Impurities in Si During Secondary Ion Mass Spectrometry Profiling Using Low-Energy Oxygen Ions
Journal of Applied Physics 85, 8() 3993-3998
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Angular and Energy Dependence of the Ion Beam Oxidation of Si Using Oxygen Ions from a Duoplasmatron Source
Surface and Interface Analysis 27() 92-97
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An X-ray reflectivity study of the influence of anodic oxidation and annealing on interface structure in quantum well devices
Colloids and Surfaces A: Physicochemical and Engineering Aspects 155() 85?91
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Continuous wave operation of low confinement asymmetric structure diode lasers
Electronics Letters 35() 148-149
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Ion implantation of SiC and GaN
Nuclear Instruments and Methods in Physics Research: Section B B148() 416-420
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S and Si ion implantation in GaSb grown on GaAs
Journal of Applied Physics 86() 6068-6071
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Ion implantation in bulk semi-insulating 4H-SiC
Journal of Applied Physics 86() 752-758
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Window Effects in a Large Solid Angle, Position-Sensitive Gas Ionisation Detector for Elastic Recoil Detection Analysis (ERDA)
Nuclear Instruments and Methods in Physics Research: Section A A423() 381-393
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Non-Linearities and Entrance Window Effects in Large Solid-Angle Gas Ionization Detectors
Nuclear Instruments and Methods in Physics Research: Section A 423() 381-393

The Kinetics of Dopant-Enhanced Solid Phase Epitaxy in H-Free Amorphous Silicon Layers
Nuclear Instruments and Methods in Physics Research: Section B B148() 350-354
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Synthesis of Ti: Sapphire by Ion Implantation
Nuclear Instruments and Methods in Physics Research: Section B B148() 726-729
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Atomic-level characterisation of ion-induced amorphisation in compound semiconductors
Nuclear Instruments and Methods in Physics Research: Section B B148() 391-395
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Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements
Nuclear Instruments and Methods in Physics Research: Section B 147() 148-154
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Role of Implantation-Induced Defects on the Response Time of Semiconductor Saturable Absorbers
Applied Physics Letters 75, 10() 1437-1439
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Low-Frequency Mode Transition in the Free In-Plane Vibration of Curved Beams
Journal of Sound and Vibration 228() 69-90
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Reduction of Band-Gap Energy in GaNAs and AlGaNAs Synthesized by N+ Implantation
Applied Physics Letters 75, 10() 1410-1412
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Synthesis of SrFeO2.5 from Mechanically Activated Reactants
Journal of Alloys and Compounds 283() 117-121
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Composition-dependent bondlengths in crystalline and amorphous GexSi1-x alloys
Physical Review B 60() 10831-10836
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Structural analysis of a carbon foam formed by high pulse-rate laser ablation
Applied Physics A: Materials Science and Processing 69 Supplement() S755 - S758
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Proton irradiation effects on the inter sub-band transitions in GaAs/AlGaAs multiple quantum wells with bulk and superlattice barriers
Applied Physics Letters 75() 525-527
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Deep Level Properties of Erbium Implanted Epitaxially Grown SiGe
Nuclear Instruments and Methods in Physics Research: Section B 148() 523-527
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Mass Effects on Regrowth Rates and Activation Energies of Solid-Phase Epitaxy Induced by Ion Beams in Silicon
Physical Review B 59, 23() 15 214-15 224
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Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3
Nuclear Instruments and Methods in Physics Research: Section B B159() 187-190
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Activation Energies for Light Ions in Ion Beam Induced Epitaxial Crystallization
Nuclear Instruments and Methods in Physics Research: Section B 148() 370-374
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Low Temperature Mechanochemical Formation of Titanium Carbonitride
Nanostructured Materials 11, 2() 233-239
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Interdiffused quantum well infrared photodetector tuning for colour sensitive arrays
Applied Physics Letters 75() 923-925
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Vertical Integration of Dual Wavelength Index Guided GaAs-Lasers
Electronics Letters 35() 815-817
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Dislocation-induced changes in quantum dots: step alignment and radiative emission
Applied Physics Letters 74() 2301-2304
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Proton Implantation and Rapid Thermal Annealing Effects on GaAs/A1GaAs Quantum Well Infrared Photodetectors
Superlattices and Microstructures 26, 5() 317-324
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Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealing
Applied Physics Letters 75() 3339-3341
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Inhibited carrier transfer in ensembles of isolated quantum dots
Physical Review B 60, 24() 16 647 - 16 651
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Wavelength tuning of GaAs/AlGaAs quantum well infrared photodetectors by thermal interdiffusion
Japanese Journal of Applied Physics 38() 5044-5045
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Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots
Physical Review Letters 82, 25() 5148-5151
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Mechanochemical Reaction and Formation of an Amorphous Nitride Phase During Ball Milling of Si in NH3
Applied Physics Letters 75, 20() 3111-3113
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The Role of Fe on the Crystallisation of a-Si3N4 from Amorphous Si-N Formed by Ion Implantation
Nuclear Instruments and Methods in Physics Research: Section B 148() 534-539
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Implantation-induced Amorphization of InP Characterised with perturbed Angular Correlation
Applied Physics Letters 75, 13() 1923-1925

(134 publications)

Conference paper

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Cluster-assembled amorphous carbon nano-foam synthesised by high-pulse-rate laser ablation
International Winterschool/Euroconference on Electronic Properties of Novel Materials ?, ?() 512

(1 publications)

Journal article (non-refereed)

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Investigation of Combustion Reactions under Different Milling Conditions
Journal of Metastable and Nanocrystalline Materials 2-6() 79-84
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Atomic-level characterisation of ion-induced amorphisation in compound semiconductors
Nuclear Instruments and Methods in Physics Research: Section B 148() 391-395
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Investigation of nanoporous carbon powders produced by high energy ball milling and formation of carbon nanotubes during subsequent annealing
Journal of Metastable and Nanocrystalline Materials 2-6() 375-380

(3 publications)

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