Mid Term Review

Morphological control and characterization of InP nanostructures grown by selective area epitaxy

Date & time

Mon 30 Oct 2017, 11am–12pm



RSPE Seminar Room (414)


Members of RSPE welcome


Mr Naiyin Wang

Group III-V semiconductors have revolutionised electronics and optoelectronics due to their superior physical and optoelectronic properties including high carrier mobility, direct bandgap and rich band alignment engineering capability. Among them, InP is highly relevant as a platform for the optoelectronic applications due to their low surface recombination velocity. Reducing their size to nanoscale brings many unique properties, such as large surface-area-to-volume ratio, high aspect ratio, carriers and photons confinement effect. These nanostructures have already been demonstrated for potential applications in solar cells, light emitters, water splitting, etc. However, to date most efforts on the growth of group III-V nanostructures including InP have been limited to nanowires. In this work, we focus on the selective area growth of InP nanostructures with different morphology from nanowires, showing the possibility of obtaining other functional shapes, the capability beyond the limitation of rod-like nanostructure and opening the way to more advanced device geometries.

In this talk, I will present my work on growing stacking fault-free wurtzite InP nano-membranes and nano-rings on InP(111)A substrates using selective-area metalorganic vapour phase epitaxy (SA-MOVPE). This involves a systematic investigation of the growth conditions like growth temperature and precursor flow rates. The morphology, crystal structure and optical properties of these InP nano-shapes will be presented in detail. Then I will present my work on growing InP nano-shapes on InP (111)B and InP(100) substrates, which enables the in-depth understanding of the growth mechanism and could promote the advancement of integration of III-V semiconductor devices with the mainstream Si-based microelectronic technology.

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