Professor Lan Fu

Fu, Lan profile
Position Head of Department
Department Electronic Materials Engineering
Research group Semiconductor optoelectronics and nanotechnology group
Qualifications MSc(USTC), PhD (ANU)
Office phone (02) 612 54060
Email
Office Physics New 3 08

Publications

Book chapter

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Disordering of quantum structures for optoelectronic device integration
Comprehensive Semiconductor Science and Technology
Elsevier, Amsterdam Netherlands (2011) 584-621
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Quantum Dot Infared Photodetectors
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011) 1-24

(2 publications)

Journal article

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Optical Nonlinearity Enabled Super-Resolved Multiplexing Microscopy
Advanced Materials 36, 2() 2308844
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Perovskite photodetector-based single pixel color camera for artificial vision
Light: Science & Applications 12, 1()
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Design of InAs nanosheet arrays for high-performance polarization-sensitive infrared photodetection
Journal of Physics D: Applied Physics 56, 1()
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Nano-structuring metal organic frameworks on semiconductor nanowire arrays for highly sensitive and selective chemical sensing
Applied Physics Reviews 10, 3() 1-12
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Light-Induced Adaptive Structural Evolution in Gallium Nitride Nanowire/Nickel Hydroxide Symbiotic System in Photoelectrochemical Environment
Advanced Functional Materials 34, 7()
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Low-Threshold Multiwavelength Plasmonic Nanolasing in an ?H?-Shape Cavity
Laser and Photonics Reviews 17, 10() 2300187
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Review on III?V Semiconductor Nanowire Array Infrared Photodetectors
Advanced Materials Technologies 8, 13()
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Vertical Emitting Nanowire Vector Beam Lasers
ACS Nano 17, 11() 10918-10924
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An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics
Nature Communications 14, 1() 1-10
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Nanoscale 3D Tomography by In-Flight Fluorescence Spectroscopy of Atoms Sputtered by a Focused Ion Beam
Nano Letters 22, 20() 8287-8293
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Investigation of light-matter interaction in single vertical nanowires in ordered nanowire arrays
Nanoscale 14, 9() 3527-3536
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Large area van der Waals epitaxy of II–VI CdSe thin films for flexible optoelectronics and full-color imaging
Nano Research 15, 1() 368�¢â?¬â??376
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Non-invasive and non-destructive characterization of MBE-grown CdZnTe/CdTe superlattice-based dislocation filtering layers
Journal of Applied Physics 131, 20()
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Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires
SCOPUS Not Found 11, 1()
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A Self-Powered Portable Nanowire Array Gas Sensor for Dynamic NO2 Monitoring at Room Temperature
Advanced Materials 35, 12() 2207199
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Self-frequency-conversion nanowire lasers
Light: Science & Applications 11, 1() 1-9
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Integrating a Nanowire Laser in an on-Chip Photonic Waveguide
Nano Letters 22, 24() 9920-9927
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Bidirectional photocurrent in p–n heterojunction nanowires
Nature Electronics 4, 9() 645-652
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Slowing Hot-Electron Relaxation in Mix-Phase Nanowires for Hot-Carrier Photovoltaics
Nano Letters 21, 18() 7761-7768
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Direct observation and manipulation of hot electrons at room temperature
National Science Review 8, 9() 1-9
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Semiconductor Nanowire Arrays for High-Performance Miniaturized Chemical Sensing
Advanced Functional Materials 32, 5()
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Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers
ACS Nano 15, 5() 9126-9133
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A High-Efficiency Wavelength-Tunable Monolayer LED with Hybrid Continuous-Pulsed Injection
Advanced Materials 33, 29()
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Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors
Advanced Materials 32, -() 1-10
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In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse
Nanotechnology 31, 24()
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Three-dimensional cross-nanowire networks recover full terahertz state
Science 368, 6490() 510-513
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Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts
IEEE Journal of Photovoltaics 10, 6() 1657-1666
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Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes
Nano Energy 71()
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Axial p-n junction design and characterization for InP nanowire array solar cells
Progress in Photovoltaics: Research and Applications 27, 3() 237-244
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Damage analysis of a perfect broadband absorber by a femtosecond laser
Scientific Reports 9, 15880() 1-8
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High Fluence Chromium and Tungsten Bowtie Nano-antennas
Scientific Reports 9, 1()
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Ferroelectric-Driven Exciton and Trion Modulation in Monolayer Molybdenum and Tungsten Diselenides
ACS Nano 13, 5() 5335-5343
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Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes
Nano Letters 19, 6() 3821-3829
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Broadband Metamaterial Absorbers
Advanced Optical Materials 7, 3() 1-32
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Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission
Journal of Spectroscopy and Dynamics 13, 11() 13492-13500
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Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire
ACS Nano 13, 3() 3492-3499
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Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory
ACS Applied Electronic Materials 1, 9() 1825-1831
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Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires
Nanotechnology 29, 22() 1-10
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Identification and modulation of electronic band structures of single-phase ?-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy
Applied Physics Letters 113, 4() 1-6
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Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance
Progress in Natural Science: Materials International 28, 2() 178-182
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Modal refractive index measurement in nanowire lasers - a correlative approach
Nano Futures 2, 035004()
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Distinguishing cap and core contributions to the photoconductive terahertz response of single GaAs based core–shell–cap nanowire detectors
Lithuanian Journal of Physics 58, 1() 15-23
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Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer
Journal of Physics D: Applied Physics 51, 39() 1-9
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Vertically Emitting Indium Phosphide Nanowire Lasers
Nano Letters 18, 6() 3414-3420
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Radial Growth Evolution of InGaAs/InP Multi Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy
ACS Nano 12, 10() 10374-10382
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Giant optical pathlength enhancement in plasmonic thin film solar cells using core-shell nanoparticles
Journal of Physics D: Applied Physics 51, 29() 8
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Introduction to the Special Issue on Emerging Areas in Integrated Photonics
IEEE Journal of Selected Topics in Applied Earth Observations and Remote Sensing 24, 6() 1-3
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High-Efficiency Monolayer Molybdenum Ditelluride Light-Emitting Diode and Photodetector
ACS Applied Materials and Interfaces 10, 50() 43291-43298
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Large-scale statistics for threshold optimization of optically pumped nanowire lasers
Nano Letters 17, 8() 4860-4865
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Low-Voltage High-Performance UV Photodetectors: An Interplay between Grain Boundaries and Debye Length
ACS Applied Materials and Interfaces 9, 3() 2606-2615
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Extreme absorption enhancement in ZnTe:O/ZnO intermediate band core-shell nanowires by interplay of dielectric resonance and plasmonic bowtie nanoantennas
Scientific Reports 7, 1() 7503-7503
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Single n+-i-n+ InP Nanowires for Highly Sensitive Terahertz Detection
Nanotechnology 28, 12() 9
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Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
Nature Communications 7()
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Molecule-Induced Conformational Change in Boron Nitride Nanosheets with Enhanced Surface Adsorption
Advanced Functional Materials 26, 45() 8202-8210
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Simultaneous Selective-Area and Vapor?Liquid?Solid Growth of InP Nanowire Arrays
Nano Letters 16, 7() 4361-4367
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Structural Engineering of Nano-Grain Boundaries for Low-Voltage UV-Photodetectors with Gigantic Photo- to Dark-Current Ratios
Advanced Optical Materials 4, 11() 1787-1795
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Tunable Band-Selective UV-Photodetectors by 3D Self-Assembly of Heterogeneous Nanoparticle Networks
Advanced Functional Materials 26, 40() 7359-7366
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Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors
Nano Letters 16, 8() 4925-4931
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Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors
ACS Nano 10, 2() 2046-2053
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Single nanowire green InGaN/GaN light emitting diodes
Nanotechnology 27, 43() 1-7
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Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating
Nano Energy 28, -() 106-114
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Colossal Dielectric Permittivity in (Nb+Al) Codoped Rutile TiO2 Ceramics: Compositional Gradient and Local Structure
Chemistry of Materials 27, 14() 4934-4942
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Influence of Electrical Design on Core-Shell GaAs Nanowire Array Solar Cells
IEEE Journal of Photovoltaics 5, 3() 854-864
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Room temperature GaAsSb single nanowire infrared photodetectors
Nanotechnology 26, 44()
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Ultraporous Electron-Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible-Blind UV Photodetectors
Advanced Materials 27, 29() 4336-4343
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Single nanowire photoconductive terahertz detectors
Nano Letters 15, 1() 206-210
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Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Nano Letters 14, 9() 5206-5211
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The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells
Progress in Photovoltaics: Research and Applications 21, 4() 736-746
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Three-dimensional in situ photocurrent mapping for nanowire photovoltaics
Nano Letters 13, 4() 1405-1409
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Periodic dielectric structures for light-trapping in InGaAs/GaAs quantum well solar cells
Optics Express 21, 9() A324-A335
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Plasmonic quantum dot solar cells for enhanced infrared response
Applied Physics Letters 100, 10() 1 - 4
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Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1() 17-21
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Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1() 17-21
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Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18() 2690-2697
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Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18() 2690-2697
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Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells
Applied Physics Letters 98, 18() 183509/1-3
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Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors
IEEE Journal of Quantum Electronics 47, 5() 577-590
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Single-mode operation of a large optically pumped triangular laser with lateral air trenches
Journal of the Optical Society of America B 26, 7() 1417-1422
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Coupling Analysis of GaAs-Based Microdisk Lasers With Different External Claddings
Journal of Lightwave Technology 27, 22() 5090-5098
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Analytical expression for the quantum dot contribution to the quasi static capacitance for conduction band characterization
Journal of Applied Physics 104, 2() 1-11
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Photoconductive response correction for detectors of terahertz radiation
Journal of Applied Physics 104, 053113() 1-7
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Over 1.0 mm-long boron nitride nanotubes
Chemical Physics Letters 463, 1-3() 130-133
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Nano Au-decorated boron nitride nanotubes: Conductance modification and field-emission enhancement
Applied Physics Letters 92, 243105() 1-3
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Two-color InGaAs/GaAs quantum dot infrared photodetectors by selective area interdiffusion
Applied Physics Letters 93, 1() 1-3
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Impurity-free disordering of InAs/InP quantum dots
Applied Physics Letters 90() 243114 1-3
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An ion-implanted InP receiver for polarization resolved terahertz spectroscopy
Optics Express 15, 11() 1-11
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Tunable Electric Conductivities of Au-Doped Boron Nitride Nanotubes
NANO 2, 6() 1-6
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Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
Nanoscale Research Letters 2() 550-553
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Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors
Journal of Applied Physics 99, 11() 114517-1-8
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Proton Irradiation-induced Intermixing in InxGa1-xAs/InP Quantum Wells - the Effect of In Composition
Semiconductor Science and Technology 21() 1441-1446
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Micro-photoluminescence Confocal Mapping of Single V-grooved GaAs Quantum Wire
Chinese Physics Letters 23, 12() 3341-3344
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Influence of Surface Passivation on Ultrafast Carrier Dynamics and Terahertz Radiation Generation in GaAs
Applied Physics Letters 89, 23() 232201-1-3
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Recombination Properties of Si-doped InGaAs/GaAs Quantum Dots
Nanotechnology 17() 5373-5377
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Quantum Dots and Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 12, 6() 1242-1254
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Study of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration
IEE Proceedings - Circuits, Devices and Systems 152, 5() 491-496
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InGaP/GaAs negative differential resistance heterojunction bipolar transistor with a new structure
Journal of Environmental Chemical Engineering 26, 9() 1783-1788
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Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures
Journal of the Electrochemical Society 150, 8() G481-G487
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Influence of Rapid Thermal Annealing on a 30 Stack InAs/GaAs Quantum Dot Infrared Photodetector
Journal of Applied Physics 94, 8() 5283-5289
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Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers
Applied Physics Letters 80, 23() 4351-4353
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Study of Intermixing in a GaAs/AlGaAs Quantum-well Structure using Dope Spin-on Silica Layers
Applied Physics Letters 80, 7() 1171-1173
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Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide
Journal of Applied Physics 92, 7() 3579-3583
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Possibility of improved frequency response from intermixed quantum-well devices
Superlattices and Microstructures 29, 2() 105-110
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Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing
Infrared Physics and Technology 42() 171-175
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The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
Journal of Crystal Growth 222() 786-790
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Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells
Surface and Interface Analysis 29() 754-760
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Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing
Applied Physics Letters 76() 837-839
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Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing
Japanese Journal of Applied Physics 39() 1687-1689
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Application of high energy implantation in tuning the detection wavelength of quantum well infrared photodetectors
Journal of Environmental Chemical Engineering 1() 88-89
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Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector
Journal of Environmental Chemical Engineering 19, 1() 25-28
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Performance comparison of GaAs/AlGaAs quantum well infrared photodetectors grown by MOCVD and MBE
Journal of Environmental Chemical Engineering 21, 5() 441-444
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Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers
Journal of Applied Physics 85() 6786-6789
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Interdiffused quantum well infrared photodetector tuning for colour sensitive arrays
Applied Physics Letters 75() 923-925
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Interdiffused quantum-well infrared photodetectors for color sensitive arrays
Applied Physics Letters 75, 7() 923-925
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Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation
Griffith Asia Quarterly () 355-357
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Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices
Griffith Asia Quarterly () 352-354
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Inter-facet noise correlation measurement as a diagnostic tool for semiconductor laser studies
Griffith Asia Quarterly () 236-239
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Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence
Griffith Asia Quarterly () 187-190

(167 publications)

Conference paper

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Self-Powered Room Temperature Nanowire Array NO2 Sensor
IEEE Nanotechnology Materials and Devices Conference (NMDC) ?, ?() 662-663
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An Efficient Workflow of Modeling Single-Nanowire Based Single-Photon Avalanche Detectors
International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) ?, ?() 121-122
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Polarization-resolved Terahertz Time-domain Spectroscopy Enabled by Nanowire Sensor Technology
Optical Sensors and Sensing Congress 2022 ?, ?() SM3C.5
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Nanowire Sensors Facilitate Polarization Sensitive Terahertz Spectroscopy
47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) ?, ?()
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Pushing limits of photovoltaics and photodetection using radial junction nanowire devices
2022 IEEE International Conference on Emerging Electronics (ICEE) ?, ?()
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Nanowires: A New Horizon for Polarization-resolved Terahertz Time-domain Spectroscopy
"2021 Conference on Lasers and Electro-Optics (CLEO)" ?, ?() 1-2
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Terahertz Full-polarization-state Detection by Nanowires
Conference on Lasers and Electro-Optics Europe (CLEO EUROPE, 2021) ?, ?() 1-1
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High-speed InGaAs/lnP Quantum Well Nanowire Array Light Emitting Diodes at Telecommunication Wavelength
2021 IEEE Photonics Conference (IPC) ?, ?()
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The Route to Nanoscale Terahertz Technology: Nanowire-based Terahertz Detectors and Terahertz Modulators
43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018) 2018-September() 2
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Room temperature GaAsSb array photodetectors
1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018 ?, ?() 143-145
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Chromium for High Fluence Bowtie Nano-Antennas
31st Annual Conference of the IEEE Photonics Society, IPC 2018 ?, ?()
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Tungsten Refractory Plasmonic Material for High Fluence Bowtie Nano-antenna
7th International Conference on Computer and Communication Engineering, ICCCE 2018 ?, ?() 20-22
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Broadband single-nanowire photoconductive terahertz detectors
CLEO: Science and Innovations, CLEO_SI 2017 ?, ?() 2
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Single nanowire terahertz detectors
CLEO: Science and Innovations, CLEO_SI 2015 15, 1() 206-210
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InP single nanowire solar cells
Light, Energy and the Environment 2015 ?, ?()
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Selective area epitaxial growth of InP nanowire array for solar cell applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 252-253
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Single GaAs/AlGaAs Nanowire Photoconductive Terahertz Detectors
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 221-222
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Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 272-274
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Compound semiconductor nanowires for optoelectronic devices
10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 ?, ?() 1-2
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III-V nanowires for optoelectronic applications
International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting 58, 7() 93-98
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InP Nanowires Grown by SA-MOVPE
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 45-46
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Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 131-132
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Coupling of light from microdisk lasters to nano-antennas with nano-tapers
IEEE Photonics Conference (IPC 2012) ?, ?() 889-890
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Improved performance of InGaAs/GaAs Quantum Dot Solar Cells using Si-modulation doping
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 127-128
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Reduction of Gain-Saturation in Merged Beam Lasers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 189-190
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Plasmonics for III-V semiconductor solar cells
IEEE Photonics Conference (IPC 2012) ?, ?() 56-57
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Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 137-138
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III-V nanowires for optoelectronic applications
5th International Conference on Computers and Devices for Communication, CODEC 2012 ?, ?() 1-3
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Dielectric Diffraction Gratings for Light-Trapping in InGaAs-GaAs Quantum Well Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 129-130
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Optoelectronic properties of GaAs nanowire photodector
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 139-140
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Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells
Photonics Society 2011 annual meeting ?, ?() 387-388
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Growth and confinement effects in III-V semiconductor nanostructures
Microoptics Conference (MOC 2011) ?, ?()
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The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties
IEEE Photovoltaic Specialists Conference PVSC 2011 ?, ?() 513-516
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Study of intermixing mechanism in AlInGaAs/InGaAs quantum well
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 47-48
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Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 716-717
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Improved performance of GaAs-based terahertz emitters
35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 ?, ?()
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High efficiency coupling of light from photonic wire lasers into nano-antennas
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 67-68
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High efficiency coupling of light from photonic wire lasers into nano-antennas
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 67-68
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Analysis of multi-wavelength photonic crystal single-defect laser arrays
23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 ?, ?() 500-501
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Increasing the coupling efficiency of a microdisk laser to waveguides by using spiral structures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 69-70
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Temperature Dependence of Dark Current Properties of InGaAs/GaAs Quantum Dot Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 127-128
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MOCVD grown quantum dot-in-a-well solar cells
11th International Symposium on Advanced Materials, ISAM-2009 442() 398-403
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Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) ?, ?() 2
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Role of Stress on Impurity Free Disordering of Quantum Dots
IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008) ?, ?() 221-224
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Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells
International Conference on Nanoscience and Nanotechnology (ICONN 2008) ?, ?() 32-35
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Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering
Nanoengineering: Fabrication, Properties, Optics, and Devices 2008 7039() 70390U/1-10
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Photonic crystal-enhanced quantum dot infrared photodetectors
Nanoengineering: Fabrication, Properties, Optics, and Devices 2008 7039() 70390S/1-11
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Thermal Annealing Study on InGaAs/GaAs Quantum Dot Infrared Photodetectors
International Conference on Nanoscience and Nanotechnology (ICONN 2006) ?, ?() 493-496
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Quantum Dots-in-a-Well Infrared Photodetectors Grown by MOCVD
International Conference on Nanoscience and Nanotechnology (ICONN 2006) ?, ?() 419-422
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Rapid Thermal Annealing Study of InGaAs/GaAs Quantum Dot Infrared Photodetectors grown by Metal-Organic Chemical Vapour Deposition
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005() 228-229
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Quantum Dot Optoelectronic Devices
Microoptics Conference (MOC 2005) ?, ?() J5-1-4
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Improvement of Kink-free Operation in InGaAs/GaAs/AlGaAs High Power, Ridge Waveguide Laser Diodes
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 25-28
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Suppression of Interdiffusion in In0.5Ga0.5As/GaAs Quantum Dots
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ?, ?() 503-506
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Impurity Free Intermixing for Optoelectronic Device Integration
Integrated Optoelectronics ?, ?() 89-105

(54 publications)

Conference written presentation

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Direct Characterization of Axial p-n Junctions for InP Nanowire Array Solar Cells Using Electron Beam-Induced Current
Light, Energy and the Environment 2015 ?, ?()

(1 publications)

Journal short contribution

(1 publications)

Journal article (non-refereed)

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Erratum: In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse (vol 31, 244002, 2020)
Nanotechnology 31, 34()

(1 publications)

Journal Editor

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Nanostructured photovoltaics PREFACE
Journal of Physics D: Applied Physics 46, 2() 1

(1 publications)