Professor Chennupati Jagadish AC

Professor Chennupati Jagadish AC
Position
Distinguished Professor
Department
Department of Electronic Materials Engineering
Qualifications
B.Sc., M.Sc(Tech)., M.Phil., Ph.D., FAA, FTSE, FIEEE, FAPS, FMRS, FOSA, FInstP, FAIP, FIoN, FSPIE, FECS, FIET, FAAAS, FAVS
Office phone
50363
Email
Office
John Carver 4 18
Curriculum vitae
Jagadish AC CV (37KB PDF)
Publication list
Jagadish AC publication list (328KB PDF)

Research publications

Book editor

Advances in Infrared Photodetectors Gunapala S, Rhiger D, Jagadish AC C (Eds.)
Advances in Infrared Photodetectors
Elsevier, USA (2011)
VLSI Micro- and Nanophotonics: Science, Technology, and Applications Lee E, Eldada L, Razeghi M, Jagadish AC C (Eds.)
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011)
Christen J, Jagadish AC C, Look D, Yao T, Bertram F (Eds.)
Zinc Oxide and Related Materials (Volume 957)
Materials Research Society, USA (2007)

Book chapter

Guide to State-of-the-Art Electron Devices Lunardi L, Mokkapati S, Jagadish AC C
Optoelectronic Devices
Guide to State-of-the-Art Electron Devices
John Wiley & Sons Inc, UK (2013) 265-274
Optical Techniques for Solid-State Materials Characterization Davis J, Jagadish AC C
Semiconductors and their nanostructures
Optical Techniques for Solid-State Materials Characterization
CRC Press LLC, Boca Raton Florida USA (2012) 39-78
GaN and ZnO-based Materials and Devices Davis J, Jagadish AC C
ZnO/MgZnO quantum wells
GaN and ZnO-based Materials and Devices
Springer-Verlag Berlin Heidelberg, London (2012) 413-434
VLSI Micro- and Nanophotonics: Science, Technology, and Applications Mokkapati S, Tan H, Jagadish AC C
Quantum Dot Integrated Optoelectronic Devices
VLSI Micro- and Nanophotonics: Science, Technology, and Applications
CRC Press LLC, Boca Raton USA (2011) 11-1 to 11-32
Fu L, Mokkapati S, Barik S, Buda M, Tan H, Jagadish AC C
Disordering of quantum structures for optoelectronic device integration
Comprehensive Semiconductor Science and Technology
Elsevier, Amsterdam Netherlands (2011) 584-621
Self-Assembled Quantum Dots Sears K, Mokkapati S, Tan H, Jagadish AC C
In(Ga)As/GaAs quantum dots grown by MOCVD for optoelectronic device applications
Self-Assembled Quantum Dots
Springer, New York (2008) 359-403
Coleman V, Bradby J, Jagadish AC C, Phillips M
A Comparison of the Mechanical properties and the impact of contact induced damage in a- and c- Axis ZnO Single crystals
Zinc Oxide and Related Materials (Volume 957)
Materials Research Society, USA (2007) 213-218

Journal article

Peng K, Parkinson P, Gao Q, Boland J, Li Z, Wang F, Mokkapati S, Fu L, Johnston M, Tan H, Jagadish AC C
Single n+-i-n+ InP Nanowires for Highly Sensitive Terahertz Detection
Nanotechnology 28, 12() 9
Qu J, Du S, Burgess T, Wang C, Cui X, Gao Q, Wang W, Tan H, Liu H, Jagadish AC C, Zhang Y, Chen H, Khan M, Ringer S, Zheng R
3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Advanced Materials Online() 1-8
Qu J, Du S, Burgess T, Wang C, Cui X, Gao Q, Wang W, Tan H, Liu H, Jagadish AC C, Zhang Y, Chen H, Khan M, Ringer S, Zheng R
3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition
Advanced Materials Online() 1-8
Yuan X, Saxena D, Caroff-Gaonac'h P, Wang F, Lockrey M, Mokkapati S, Tan H, Jagadish AC C
Strong Amplified Spontaneous Emission from High Quality GaAs1-xSbx Single Quantum Well Nanowires
Journal of Physical Chemistry C 121, 15() 8636-8644
Yuan X, Saxena D, Caroff-Gaonac'h P, Wang F, Lockrey M, Mokkapati S, Tan H, Jagadish AC C
Strong Amplified Spontaneous Emission from High Quality GaAs1-xSbx Single Quantum Well Nanowires
Journal of Physical Chemistry C 121, 15() 8636-8644
Baig S, Boland J, Damry D, Tan H, Jagadish AC C, Joyce H, Johnston M
An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires
Nano Letters 17, 4() 2603-2610
Karuturi S, Tan H, Jagadish AC C
Nanostructured Photoelectrodes via Template-Assisted Fabrication
Scopus Journal Not Found - Do Not Edit this Journal ()
Gao Q, Tan H, Jagadish AC C, Wagner H, Kaveh M, Langbein W
Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires
Scopus Journal Not Found - Do Not Edit this Journal 95, 4()
Carrad D, Mostert A, Ullah A, Burke A, Joyce H, Tan H, Jagadish AC C, Krogstrup P, Nygård J, Meredith P, Micolich A
Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry
Nano Letters 17, 2() 827-833
Gareso P, Buda M, Tan H, Jagadish AC C
The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes
Indian Journal of Pure & Applied Physics 55, 5() 333-338
Joyce H, Baig S, Parkinson P, Davies C, Boland J, Tan H, Jagadish AC C, Herz L, Johnston M
The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires
Journal of Physics D: Applied Physics 50, 22()
Gautam V, Gautam V, Gautam V, Naureen S, Shahid N, Gao Q, Wang Y, Nisbet D, Jagadish AC C, Daria V, Gao Q
Engineering Highly Interconnected Neuronal Networks on Nanowire Scaffolds
Nano Letters ()
Soo M, Zheng K, Gao Q, Tan H, Jagadish AC C, Zou J
Mirror-twin induced bicrystalline InAs nanoleaves
Nano Research 9, 3() 766-773
Tedeschi D, De Luca M, del Águila A, Gao Q, Ambrosio G, Capizzi M, Tan H, Christianen P, Jagadish AC C, Polimeni A
Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires
Nano Letters 16, 10() 6213-6221
Soo M, Zheng K, Gao Q, Tan H, Jagadish AC C, Zou J
Temperature-dependent side-facets of GaAs nanopillars
Semiconductor Science and Technology 31, 9()
Soo M, Zheng K, Gao Q, Tan H, Jagadish AC C, Zou J
Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks
Nano Letters 16, 7() 4189-4193
Shi T, Jackson H, Smith L, Jiang N, Tan H, Jagadish AC C
Thermal Delocalization of Excitons in GaAs/AlGaAs Quantum Well Tube Nanowires
Nano Letters 16() 1392-1397
Tedeschi D, De Luca M, Fonseka H, Gao Q, Mura F, Tan H, Rubini S, Martelli F, Jagadish AC C, Capizzi M, Polimeni A
Long-Lived Hot Carriers in III-V Nanowires
Nano Letters 16, 5() 3085-3093
Zhang G, Li Z, Yuan X, Wang F, Fu L, Zhuang Z, Ren F, Liu B, Zhang R, Tan H, Jagadish AC C
Single nanowire green InGaN/GaN light emitting diodes
Nanotechnology 27, 43() 1-7
Zhong Z, Li Z, Gao Q, Li Z, Peng K, Li L, Mokkapati S, Vora K, Wu J, Zhang G, Wang Z, Fu L, Tan H, Jagadish AC C
Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating
Nano Energy 28, -() 106-114
Saxena D, Jiang N, Yuan X, Mokkapati S, Guo Y, Tan H, Jagadish AC C
Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers
Nano Letters 16, 8() 5080-5086
Zhang G, Guo X, Ren F, Li Y, Liu B, Ye J, Ge H, Xie Z, Zhang R, Tan H, Jagadish AC C
High-Brightness Polarized Green InGaN/GaN Light-Emitting Diode Structure with Al-Coated p-GaN Grating
ACS Photonics 3, 10() 1912-1918
Yang J, Wang Z, Wang F, Xu R, Tao J, Zhang S, Qin Q, Luther-Davies B, Jagadish AC C, Yu Z, Lu Y
Atomically thin optical lenses and gratings
Light: Science & Applications 5()
Toe W, Ortega-Piwonka I, Angstmann C, Gao Q, Tan H, Jagadish AC C, Henry B, Reece P
Nonconservative dynamics of optically trapped high-aspect-ratio nanowires
Physical Review E 93, 2() 1-7
Xu W, Ren F, Ye J, Lu H, Liang L, Huang X, Liu M, Shadrivov I, Powell D, Yu G, Jin B, Zhang R, Zheng Y, Tan H, Jagadish AC C
Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays
Scientific Reports 6()
Gao Q, Dubrovskii V, Caroff-Gaonac'h P, Wong-Leung J, Li L, Guo Y, Fu L, Tan H, Jagadish AC C
Simultaneous Selective-Area and Vapor−Liquid−Solid Growth of InP Nanowire Arrays
Nano Letters 16() 4361-4367
Chen Y, Burgess T, An X, Mai Y, Tan H, Zou J, Ringer S, Jagadish AC C, Liao X
Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires
Nano Letters 16, 3() 1911-1916
Chan K, Vines L, Li L, Jagadish AC C, Svensson B, Wong-Leung J
Zn precipitation and Li depletion in Zn implanted ZnO
Applied Physics Letters 109, 2() 022102-1-4
Rota M, Ameruddin A, Fonseka H, Gao Q, Mura F, Polimeni A, Miriametro A, Tan H, Jagadish AC C, Capizzi M
Bandgap Energy of Wurtzite InAs Nanowires
Nano Letters 16, 8() 5197-5203
Burgess T, Saxena D, Mokkapati S, Li Z, Hall C, Davis J, Wang Y, Smith L, Fu L, Caroff-Gaonac'h P, Tan H, Jagadish AC C
Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
Nature Communications 7()
Jagadish AC C, Yu P, Wu J, Liu S, Xiong J, Wang Z
Design and fabrication of silicon nanowires towards efficient solar cells
Nano Today 11, 6() 704-737
Peng K, Parkinson P, Boland J, Gao Q, Wenas Y, Davies C, Li Z, Fu L, Johnston M, Tan H, Jagadish AC C
Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors
Nano Letters 16, 8() 4925-4931
Mokkapati S, Jagadish AC C
Review on photonic properties of nanowires for photovoltaics
Optics Express 24, 15() 17345-17358
Liu G, Karuturi S, Simonov A, Fekete M, Chen H, Nasiri-Varg N, Le N, Narangari P, Lysevych M, Gengenbach T, Lowe A, Tan H, Jagadish AC C, Spiccia L, Tricoli A
Robust Sub-Monolayers of Co3O4 Nano-Islands: A Highly Transparent Morphology for Efficient Water Oxidation Catalysis
Advanced Energy Materials 6, 15()
Peng K, Parkinson P, Fu L, Gao Q, Jiang N, Guo Y, Wang F, Joyce H, Boland J, Tan H, Jagadish AC C, Johnston M
Single nanowire photoconductive terahertz detectors
Nano Letters 15, 1() 206-210
Peng K, Parkinson P, Fu L, Gao Q, Jiang N, Guo Y, Wang F, Joyce H, Boland J, Tan H, Jagadish AC C, Johnston M
Single nanowire terahertz detectors
Nano Letters 15, 1() 206-210
Saxena D, Wang F, Gao Q, Mokkapati S, Tan H, Jagadish AC C
Mode Profiling of Semiconductor Nanowire Lasers
Nano Letters 15, 8() 5342-5348
Pemasiri K, Jackson H, Smith L, Wong B, Paiman S, Gao Q, Tan H, Jagadish AC C
Quantum confinement of excitons in wurtzite InP nanowires
Journal of Applied Physics 117, 19() 1-4
Yuan X, Caroff-Gaonac'h P, Wang F, Guo Y, Wang Y, Jackson H, Smith L, Tan H, Jagadish AC C
Antimony Induced {112}A Faceted Triangular GaAs1-xSbx/InP Core/Shell Nanowires and Their Enhanced Optical Quality
Advanced Functional Materials 25, 33() 5300-5308
Zilli A, De Luca M, Tedeschi D, Fonseka H, Miriametro A, Tan H, Jagadish AC C, Capizzi M, Polimeni A
Temperature dependence of interband transitions in wurtzite InP nanowires
ACS Nano 9, 4() 4277-4287
Shi T, Jackson H, Smith L, Jiang N, Gao Q, Tan H, Jagadish AC C, Zheng C, Etheridge J
Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes
Nano Letters 15, 3() 1876-1882
Kaveh M, Dyck O, Duscher G, Gao Q, Jagadish AC C, Wagner H
Exciton emission from hybrid organic and plasmonic polytype InP nanowire heterostructures
Materials Research Express 2, 4() 1-13
Badada B, Shi T, Jackson H, Smith L, Zheng C, Etheridge J, Gao Q, Tan H, Jagadish AC C
Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Localization
Nano Letters 15, 12() 7847-7852
Burgess T, Caroff-Gaonac'h P, Wang Y, Badada B, Jackson H, Smith L, Guo Y, Tan H, Jagadish AC C
Zn3As2 Nanowires and Nanoplatelets: Highly Efficient Infrared Emission and Photodetection by an Earth Abundant Material
Nano Letters 15() 378-385
Li Z, Yuan X, Fu L, Peng K, Wang F, Fu X, Caroff-Gaonac'h P, White T, Jagadish AC C, Tan H
Room temperature GaAsSb single nanowire infrared photodetectors
Nanotechnology 26, 44()
Ameruddin A, Fonseka H, Caroff-Gaonac'h P, Wong-Leung J, Op het Veld R, Boland J, Johnston M, Tan H, Jagadish AC C
InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology
Nanotechnology 26, 20() 1-10
Ameruddin A, Caroff-Gaonac'h P, Tan H, Jagadish AC C, Dubrovskii V
Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires
Nanoscale 7, 39() 16266-16272
Chan K, Vines L, Li L, Jagadish AC C, Svensson B, Wong-Leung J
Equilibrium shape of nano-cavities in H implanted ZnO
Applied Physics Letters 106, 21()
Badada B, Shi T, Jackson H, Smith L, Zheng C, Etheridge J, Gao Q, Tan H, Jagadish AC C
Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Localization
Nano Letters 15, 12() 7847-7852
Chen Y, Gao Q, Wang Y, An X, Liao X, Mai Y, Tan H, Zou J, Ringer S, Jagadish AC C
Determination of Youngs Modulus of Ultrathin Nanomaterials
Nano Letters 15, 8() 5279-5283
Li Z, Wenas Y, Fu L, Mokkapati S, Tan H, Jagadish AC C
Influence of Electrical Design on Core - Shell GaAs Nanowire Array Solar Cells
IEEE Journal of Photovoltaics 5, 3() 854-864
De Luca M, Zilli A, Fonseka H, Mokkapati S, Miriametro A, Tan H, Smith L, Jagadish AC C, Capizzi M, Polimeni A
Polarized light absorption in wurtzite InP nanowire ensembles
Nano Letters 15, 2() 998-1005
Davies C, Parkinson P, Jiang N, Boland J, Conesa-Boj S, Tan H, Jagadish AC C, Herz L, Johnston M
Low ensemble disorder in quantum well tube nanowires
Nanoscale 7, 48() 20531-20538
Menelaou C, Tierney S, Blouin N, Mitchell W, Tiwana P, McKerracher I, Jagadish AC C, Carrasco M, Herz L
Effect of nanocrystalline domains in photovoltaic devices with benzodithiophene-based donor-acceptor copolymers
Journal of Physical Chemistry C 118, 31() 17351-17361
Joyce H, Parkinson P, Jiang N, Docherty C, Gao Q, Tan H, Jagadish AC C, Herz L, Johnston M
"Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires"
Nano Letters 14, 10() 5989-5994
Wang Y, Jackson H, Smith L, Burgess T, Paiman S, Gao Q, Tan H, Jagadish AC C
Carrier thermalization dynamics in single zincblende and wurtzite InP nanowires
Nano Letters 14, 12() 7153-7160
Sun W, Huang Y, Guo Y, Liao Z, Gao Q, Tan H, Jagadish AC C, Liao X, Zou J
Spontaneous formation of core-shell GaAsP nanowires and their enhanced electrical conductivity
Journal of Materials Chemistry C: materials for optical and electronic devices 3, 8() 1745-1750
Ren F, Xu W, Ye J, Ang K, Lu H, Zhang R, Yu M, Lo G, Tan H, Jagadish AC C
Second-order surface-plasmon assisted responsivity enhancement in germanium nanophotodetectors with bull's eye antennas
Optics Express 22, 13() 15949-15956
De Luca M, Polimeni A, Fonseka H, Meaney A, Christianen P, Maan J, Paiman S, Tan H, Mura F, Jagadish AC C, Capizzi M
Magneto-optical properties of wurtzite-phase InP nanowires
Nano Letters 14, 8() 4250-4256
Carrad D, Burke A, Lyttleton R, Joyce H, Tan H, Jagadish AC C, Storm K, Linke H, Samuelson L, Micolich A
Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors
Nano Letters 14, 1() 94-100
Chan K, Ton-That C, Vines L, Choi S, Phillips M, Svensson B, Jagadish AC C, Wong-Leung J, Wong-Leung J
Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO
Journal of Physics D: Applied Physics 47, 34() 1-6
Bao P, Wang Y, Cui X, Gao Q, Yen H, Liu H, Yeoh W, Liao X, Du S, Tan H, Jagadish AC C, Zou J, Ringer S, Zheng R
Atomic-scale observation of parallel development of super elasticity and reversible plasticity in GaAs nanowires
Applied Physics Letters 104, 021904() 1-4
Gao Q, Saxena D, Wang F, Fu L, Mokkapati S, Guo Y, Li L, Wong-Leung J, Caroff-Gaonac'h P, Tan H, Jagadish AC C
Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Nano Letters 14, 9() 5206-5211
Parkinson P, Lee Y, Fu L, Breuer S, Tan H, Jagadish AC C
Three-dimensional in situ photocurrent mapping for nanowire photovoltaics
Nano Letters 13, 4() 1405-1409
Perera S, Fickenscher M, Shi T, Jackson H, Smith L, Yarrison-Rice J, Paiman S, Gao Q, Tan H, Jagadish AC C
Illuminating the second conduction band and spin-orbit energy in single wurtzite InP nanowires
Nano Letters 13, 11() 5367-5372
Staude I, Decker M, Ventura M, Jagadish AC C, Neshev D, Gu M, Kivshar Y
Hybrid high-resolution three-dimensional nanofabrication for metamaterials and nanoplasmonics
Advanced Materials 25, 9() 1260-1264
Paiman S, Gao Q, Tan H, Jagadish AC C, Zhang X, Zou J
Effects of growth rate on InP nanowires morphology and crystal structure
Journal of Crystal Growth 383() 100-105
Saxena D, Mokkapati S, Parkinson P, Jiang N, Gao Q, Tan H, Jagadish AC C
Optically pumped room-temperature GaAs nanowire lasers
Nature Photonics 7, 12() 963-968
Sun W, Guo Y, Xu H, Liao Z, Gao Q, Tan H, Jagadish AC C, Zou J
Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Journal of Physical Chemistry C 117, 37() 19234-19238
Mironov E, Li Z, Hattori H, Vora K, Tan H, Jagadish AC C
Titanium nano-antenna for high-power pulsed operation
Journal of Lightwave Technology 31, 15() 2459-2466
Mironov E, Li Z, Hattori H, Vora K, Tan H, Jagadish AC C
Titanium Nano-Antenna for High-Power Pulsed Operation
Journal of Lightwave Technology 31, 15() 2459-2466
Yong C, Wong-Leung J, Joyce H, Lloyd-Hughes J, Gao Q, Tan H, Jagadish AC C, Johnson M, Herz L
Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions
Nano Letters 13, 9() 4280-4287
Zheng C, Wong-Leung J, Gao Q, Tan H, Jagadish AC C, Etheridge J
Polarity-driven 3-fold symmetry of GaAs/AlGaAs core multishell nanowires
Nano Letters 13, 8() 3742-3748
Wang F, Toe W, Lee W, Gao Q, McGloin D, Tan H, Jagadish AC C, Reece P
Resolving stable axial trapping points of nanowires in an optical tweezers using photoluminescence mapping
Nano Letters 13, 3() 1185-1191
Wang F, Toe W, Lee W, Gao Q, McGloin D, Tan H, Jagadish AC C, Reece P
Resolving stable axial trapping points of nanowires in an optical tweezers using photoluminescence mapping
Nano Letters 13, 3() 1185-1191
Sun W, Guo Y, Xu H, Liao Z, Gao Q, Tan H, Jagadish AC C, Zou J
Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition
Journal of Physical Chemistry C 117, 37() 19234-19238
Little D, Kuruwita R, Joyce A, Gao Q, Burgess T, Jagadish AC C, Kane D
Phase-stepping interferometry of GaAs nanowires: Determining nano-wire radius
Applied Physics Letters 103, 16() 161107
Ullah A, Joyce H, Burke A, Wong-Leung J, Tan H, Jagadish AC C, Micolich A
Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
Physica Status Solidi: Rapid Research Letters 7, 10() 911-914
Decker M, Kremers C, Minovich A, Staude I, Miroshnichenko A, Chigrin D, Neshev D, Jagadish AC C, Kivshar Y
Electro-optical switching by liquid-crystal controlled metasurfaces
Biomedical Optics Express 21, 7() 8879-8885
Decker M, Staude I, Shishkin I, Samusev K, Parkinson P, Sreenivasan V, Minovich A, Miroshnichenko A, Zvyagin A, Jagadish AC C, Neshev D, Kivshar Y
Dual-channel spontaneous emission of quantum dots in magnetic metamaterials
Nature Communications 4() 10
Du S, Burgess T, Gault B, Gao Q, Bao P, Li L, Cui X, Yeoh W, Liu H, Yao L, Ceguerra A, Tan H, Jagadish AC C, Ringer S, Zheng R
Quantitative dopant distributions in GaAs nanowires using atom probe tomography
Ultramicroscopy 132() 186-192
Du S, Burgess T, Gault B, Gao Q, Bao P, Li L, Cui X, Yeoh W, Liu H, Yao L, Ceguerra A, Tan H, Jagadish AC C, Ringer S, Zheng R
Quantitative dopant distributions in GaAs nanowires using atom probe tomography
Ultramicroscopy 132() 186-192
Chen Z, Lei W, Chen B, Wang Y, Liao X, Tan H, Zhou J, Ringer S, Jagadish AC C
Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy
Scripta Materialia 69, 8() 638-641
Chen B, Wang J, Gao Q, Chen Y, Liao X, Lu C, Tan H, Mai Y, Zou J, Ringer S, Gao H, Jagadish AC C
Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing
Nano Letters 13, 9() 4369-4373
Burgess T, Breuer S, Caroff-Gaonac'h P, Wong-Leung J, Wong-Leung J, Gao Q, Tan H, Jagadish AC C
Twinning superlattice formation in GaAs nanowires
ACS Nano 7, 9() 8105-8114
Chan K, Vines L, Johansen K, Monakhov E, Ye J, Parkinson P, Jagadish AC C, Svensson B, Wong-Leung J
Defect formation and thermal stability of H in high dose H implanted ZnO
Journal of Applied Physics 114, 8()
Chen B, Gao Q, Wang Y, Liao X, Mai Y, Tan H, Zou J, Jagadish AC C, Ringer S
Anelastic behavior in GaAs semiconductor nanowires
Nano Letters 13, 7() 3169-3172
Du S, Burgess T, Loi S, Gault B, Gao Q, Bao P, Li L, Cui X, Yeoh W, Tan H, Jagadish AC C, Ringer S, Zheng R
Full tip imaging in atom probe tomography
Ultramicroscopy 124() 96-101
Chen B, Gao Q, Chang L, Wang Y, Chen Z, Liao X, Tan H, Zou J, Ringer S, Jagadish AC C
Attraction of semiconductor nanowires: An in situ observation
Acta Materialia 61, 19() 7166-7172
Jiang N, Gao Q, Parkinson P, Wong-Leung J, Mokkapati S, Breuer S, Tan H, Zheng C, Jagadish AC C, Etheridge J
Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell Nanowires through shell growth optimization
Nano Letters 13, 11() 5135-5140
Joyce H, Docherty C, Gao Q, Tan H, Jagadish AC C, Lloyd-Hughes J, Herz L, Johnston M
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
Nanotechnology 24, 21() 7
Du S, Burgess T, Loi S, Gault B, Gao Q, Bao P, Li L, Cui X, Yeoh W, Tan H, Jagadish AC C, Ringer S, Zheng R
Full tip imaging in atom probe tomography
Ultramicroscopy 124() 96-101
Guo Y, Xu H, Auchterlonie G, Burgess T, Joyce H, Tan H, Gao Q, Jagadish AC C, Shu H, Chen X, Lu W, Kim Y, Zou J
Phase separation induced by Au catalysts in ternary InGaAs nanowires
Nano Letters 13, 2() 643-650
Kruk S, Helgert C, Decker M, Staude I, Menzel C, Etrich C, Rockstuhl C, Jagadish AC C, Pertsch T, Neshev D, Kivshar Y
Optical metamaterials with quasicrystalline symmetry: Symmetry-induced optical isotropy
Physical Review B: Condensed Matter and Materials 88, 20() 1-5
Guo Y, Burgess T, Gao Q, Tan H, Jagadish AC C, Zou J
Polarity-driven Nonuniform Composition in InGaAs Nanowires
Nano Letters 13, 11() 5085−5089
Fickenscher M, Shi T, Jackson H, Smith L, Yarrison-Rice J, Zheng C, Miller P, Etheridge J, Gao Q, Wong B, Deshpande S, Tan H, Jagadish AC C
Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes
Nano Letters 13, 3() 1016-1022
Guo Y, Burgess T, Gao Q, Tan H, Jagadish AC C, Zou J
Polarity-driven nonuniform composition in InGaAs nanowires
Nano Letters 13, 11() 5085-5089
Vines L, Wong-Leung J, Wong-Leung J, Jagadish AC C, Quemener V, Monakhov E, Svensson B
Acceptor-like deep level defects in ion-implanted ZnO
Applied Physics Letters 100, 21()
Xia H, Lu S, Li T, Parkinson P, Liao Z, Liu F, Lu W, Hu W, Chen P, Xu H, Zou J, Jagadish AC C
Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping
ACS Nano 6, 7() 6005-6013
Vines L, Wong-Leung J, Wong-Leung J, Jagadish AC C, Monakhov E, Svensson B
Ion implantation induced defects in ZnO
Physica B 407() 1471-1484
Saxena D, Mokkapati S, Jagadish AC C
Semiconductor Nanolasers
IEEE Photonics Journal 4, 2() 582-585
Xu H, Guo Y, Sun W, Liao Z, Burgess T, Lu H, Gao Q, Tan H, Jagadish AC C, Zou J
Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
Nanoscale Research Letters 7, 1() 1-6
Ren Q, Lu J, Tan H, Wu S, Sun L, Zhang W, Xie W, Sun Z, Zhu Y, Jagadish AC C, Shen S, Chen Z
Spin-resolved purcell effect in a quantum dot microcavity system
Nano Letters 12, 7() 3455-3459
Staude I, Maksymov I, Decker M, Miroshnichenko A, Neshev D, Jagadish AC C, Kivshar Y
Broadband scattering by tapered nanoantennas
Physica Status Solidi: Rapid Research Letters 6, 12() 466-468
Ye J, Parkinson P, Ren F, Gu S, Tan H, Jagadish AC C
Raman probing of competitive laser heating and local recrystallization effect in ZnO nanocrystals
Biomedical Optics Express 20, 21() 23281-23289
Yong C, Joyce H, Lloyd-Hughes J, Gao Q, Tan H, Jagadish AC C, Johnston M, Herz L
Ultrafast Dynamics of Exciton Formation in Semiconductor Nanowires
Small 8, 11() 1725-1731
Yong C, Noori K, Gao Q, Joyce H, Tan H, Jagadish AC C, Giustino F, Johnston M, Herz L
Strong Carrier Lifetime Enhancement in GaAs Nanowires coated with Semiconducting Polymer
Nano Letters 12, 12() 6293-6301
Montazeri M, Jackson H, Smith L, Yarrison-Rice J, Kang J, Gao Q, Tan H, Jagadish AC C
Transient Rayleigh scattering: A new probe of picosecond carrier dynamics in a single semiconductor nanowire
Nano Letters 12, 10() 5389-5395
Ye J, Lim S, Bosman M, Gu S, Zheng Y, Tan H, Jagadish AC C, Sun X, Teo K
Spin-polarized Wide Electron Slabs in Functionally Graded Polar Oxide Heterostructures
Scientific Reports 2()
Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Jiang N, Tan H, Jagadish AC C, Zou J
High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films
Crystal Growth & Design 12, 4() 2018-2022
Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Tan H, Jagadish AC C, Zou J
Defect-Free <110> zinc-blende structured InAs nanowires catalyzed by palladium
Nano Letters 12, 11() 5744-5749
Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Jiang N, Tan H, Jagadish AC C, Zou J
High-Density, Defect-Free, and Taper-Restrained Epitaxial GaAs Nanowires Induced from Annealed Au Thin Films
Crystal Growth & Design 12, 4() 2018-2022
Xu H, Guo Y, Sun W, Liao Z, Burgess T, Lu H, Gao Q, Tan H, Jagadish AC C, Zou J
Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
Nanoscale Research Letters 7, 1() 1-6
Kang J, Gao Q, Parkinson P, Joyce H, Tan H, Jagadish AC C, Guo Y, Xu H, Zou J, Kim Y
Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates
Nanotechnology 23, 41() 1-11
Joyce H, Wong-Leung J, Wong-Leung J, Yong C, Docherty C, Paiman S, Gao Q, Tan H, Jagadish AC C, Lloyd-Hughes J, Herz L, Johnston M
Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy
Nano Letters 12, 10() 5325-5330
Johnson B, Villis B, Burgess J, Stavrias N, McCallum J, Charnvanichborikarn S, Wong-Leung J, Wong-Leung J, Jagadish AC C, Williams J
Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
Journal of Applied Physics 111, 9() 094910/1-8
Mokkapati S, Saxena D, Jiang N, Parkinson P, Wong-Leung J, Wong-Leung J, Gao Q, Tan H, Jagadish AC C
Polarization Tunable, Multicolor Emission from Core-Shell Photonic III-V Semiconductor Nanowires
Nano Letters 12, 12() 6428-6431
Chen Z, Lei W, Chen B, Wang Y, Liao X, Tan H, Zou J, Ringer S, Jagadish AC C
Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
Nanoscale Research Letters 7() 486
Lu H, Mokkapati S, Fu L, Jolley G, Tan H, Jagadish AC C
Plasmonic quantum dot solar cells for enhanced infrared response
Applied Physics Letters 100, 103505() 1 - 4
Minovich A, Farnell J, Neshev D, McKerracher I, Karouta F, Tian J, Powell D, Shadrivov I, Tan H, Jagadish AC C, Kivshar Y
Liquid crystal based nonlinear fishnet metamaterials
Applied Physics Letters 100, 12() 121113-1-4
Kim J, Moon S, Kim Y, Chen Z, Zou J, Choi D, Joyce H, Gao Q, Tan H, Jagadish AC C
Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process
Nanotechnology 23, 11() 115603
Kim J, Moon S, Yoon H, Jung J, Kim Y, Chen Z, Zou J, Choi D, Joyce H, Gao Q, Tan H, Jagadish AC C
Taper-free and Vertically Oriented Ge Nanowires on Ge/Si Substrates Grown by a Two-Temperature Process
Crystal Growth & Design 12, 1() 135-141
Li L, Guo Y, Cui X, Zheng R, Ohtani K, Kong C, Ceguerra A, Moody M, Ye J, Tan H, Jagadish AC C, Liu H, Stampfl C, Ohno H, Ringer S, Matsukura F
Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
Physical Review B 85, 17() 1-8
Li L, Guo Y, Cui X, Zheng R, Ohtani K, Kong C, Ceguerra A, Moody M, Ye J, Tan H, Jagadish AC C, Liu H, Stampfl C, Ohno H, Ringer S, Matsukura F
Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
Physical Review B: Condensed Matter and Materials 85, 17() 1-8
McCallum J, Villis B, Johnson B, Stavrias N, Burgess J, Charnvanichborikarn S, Wong-Leung J, Williams J, Jagadish AC C
Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon
Physica Status Solidi A 208, 3() 620-623
McKerracher I, Wong-Leung J, Jolley G, Fu L, Tan H, Jagadish AC C
Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors
IEEE Journal of Quantum Electronics 47, 5() 577-590
Li Z, Hattori H, Fu L, Tan H, Jagadish AC C
Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18() 2690-2697
Messing M, Wong-Leung J, Zanolli Z, Joyce H, Tan H, Gao Q, Wallenberg L, Johansson J, Jagadish AC C
Growth of Straight InAs-on-GaAs Nanowire Heterostructures
Nano Letters 11, 9() 3899-3905
Wang F, Reece P, Paiman S, Gao Q, Tan H, Jagadish AC C
Nonlinear Optical Processes in Optically Trapped InP Nanowires
Nano Letters 11, 10() 4149-4153
Wang Y, Wang L, Joyce H, Gao Q, Liao X, Mai Y, Tan H, Zou J, Ringer S, Gao H, Jagadish AC C
Super Deformability and Young's Modulus of GaAs Nanowires
Advanced Materials Research 23, 11() 1356-1360
Li Z, Hattori H, Fu L, Tan H, Jagadish AC C
Merging photonic wire lasers and nanoantennas
Journal of Lightwave Technology 29, 18() 2690-2697
Wang Y, Joyce H, Gao Q, Liao X, Tan H, Zou J, Ringer S, Shan Z, Jagadish AC C
Self-healing of fractured GaAs nanowires
Nano Letters 11, 4() 1546-1549
Wang F, Reece P, Paiman S, Gao Q, Tan H, Jagadish AC C
Nonlinear Optical Processes in Optically Trapped InP Nanowires
Nano Letters 11, 10() 4149-4153
Reece P, Toe W, Wang F, Paiman S, Gao Q, Tan H, Jagadish AC C
Characterization of Semiconductor Nanowires Using Optical Tweezers
Nano Letters 11, 6() 2375-2381
Reece P, Toe W, Wang F, Paiman S, Gao Q, Tan H, Jagadish AC C
Characterization of Semiconductor Nanowires Using Optical Tweezers
Nano Letters 11, 6() 2375-2381
Montazeri M, Wade A, Fickenscher M, Jackson H, Smith L, Yarrison-Rice J, Gao Q, Tan H, Jagadish AC C
Photomodulated Rayleigh Scattering of Single Semiconductor Nanowires: Probing Electronic Band Structure
Nano Letters 11() 4329-4336
Kang J, Gao Q, Joyce H, Tan H, Jagadish AC C, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
Crystal Growth and Design 11, 7() 3109-3114
Fickenscher M, Jackson H, Smith L, Yarrison-Rice J, Kang J, Paiman S, Gao Q, Tan H, Jagadish AC C
Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires
Applied Physics Letters 99, 263110() 1-4
Gao Q, Tan H, Jackson H, Smith L, Yarrison-Rice J, Zou J, Jagadish AC C
Growth and properties of III-V compound semiconductor heterostructure nanowires
Semiconductor Science and Technology 26, 1() 1-10
Davis J, Hall C, Dao L, Nugent K, Quiney H, Tan H, Jagadish AC C
Three-dimensional electronic spectroscopy of excitons in asymmetric double quantum wells
Journal of Chemical Physics 135, 044510() 1-9
Andres-Arroyo A, Reece P, Johnson C, Vora K, Karouta F, Jagadish AC C
Wavelength selective filter based on polarization control in a photonic bandgap structure with a defect
Optics Express 19, 25() 25643 - 25650
Handapangoda D, Premaratne M, Rukhlenko I, Jagadish AC C
Optimal design of composite nanowires for extended reach of surface plasmon-polaritons
Optics Express 19, 17() 16058 -16074
Gao Q, Joyce H, Paiman S, Kang J, Tan H, Kim Y, Smith L, Jackson H, Yarrison-Rice J, Zou J, Jagadish AC C
III-V compound semiconductor nanowires for optoelectronic device applications
International Journal of High Speed Electronics and Systems 20, 1() 131-141
Joyce H, Gao Q, Wong-Leung J, Kim Y, Tan H, Jagadish AC C
Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 17, 4() 766-778
Headley C, Fu L, Parkinson P, Xu X, Lloyd-Hughes J, Jagadish AC C, Johnston M
Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1() 17-21
Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y, Zou J, Smith L, Jackson H, Yarrison-Rice J, Parkinson P, Johnston M
III-V semiconductor nanowires for optoelectronic device applications
Progress in Quantum Electronics 35() 23-75
Kang J, Gao Q, Joyce H, Tan H, Jagadish AC C, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Defect-free GaAs/AlGaAs Core-shell nanowires on Si substrates
Crystal Growth & Design 11, 7() 3109-3114
Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y, Zou J, Smith L, Jackson H, Yarrison-Rice J, Parkinson P, Johnston M
III-V semiconductor nanowires for optoelectronic device applications
Progress in Quantum Electronics 35, 2-3() 23-75
Headley C, Fu L, Parkinson P, Xu X, Lloyd-Hughes J, Jagadish AC C, Johnston M
Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17, 1() 17-21
Minovich A, Neshev D, Powell D, Shadrivov I, Lapin M, McKerracher I, Hattori H, Tan H, Jagadish AC C, Kivshar Y
Tilted response of fishnet metamaterials at near-infrared optical wavelengths
Physical Review B: Condensed Matter and Materials 81, 115109() 6
Montazeri M, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J, Kang J, Gao Q, Tan H, Jagadish AC C, Guo Y, Zou J, Pistol M, Pryor C
Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires
Nano Letters 10, 3() 880-886
Zhang P, Song Y, Zhang X, Tan J, Jagadish AC C, Tan H, Zhang Z
Tunable, high beam quality and narrow linewidth semiconductor disk laser
Optical Engineering 49, 10() 5
Smith L, Jackson H, Yarrison-Rice J, Jagadish AC C
Insights into single semiconductor nanowire heterostructures using time-resolved photoluminescence
Semiconductor Science and Technology 25, 2() 1-13
Perera S, Pemasiri K, Fickenscher M, Jackson H, Smith L, Yarrison-Rice J, Paiman S, Gao Q, Tan H, Jagadish AC C
Probing valence band structure in wurtzite InP nanowires using excitation spectroscopy
Applied Physics Letters 97, 2()
Paiman S, Gao Q, Joyce H, Kim Y, Tan H, Jagadish AC C, Zhang X, Guo Y, Zou J
Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
Journal of Physics D: Applied Physics 43, 44() 1-6
Neshev D, Minovich A, Dieing T, Hattori H, McKerracher I, Tan H, Jagadish AC C, Kivshar Y
Near-field studies of arrays of chirped subwavelength apertures
Physica Status Solidi: Rapid Research Letters 4, 10() 253-255
Paiman S, Gao Q, Joyce H, Kim Y, Tan H, Jagadish AC C, Zhang X, Guo Y, Zou J
Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
Journal of Physics D: Applied Physics 43, 44() 1-6
Montazeri M, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J, Kang J, Gao Q, Tan H, Jagadish AC C, Guo Y, Zou J, Pistol M, Pryor C
Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires
Nano Letters 10, 3() 880-886
Kim Y, Jung J, Yoon H, Song M, Bae S, Kim Y, Chen Z, Zou J, Joyce H, Gao Q, Tan H, Jagadish AC C
CdS/CdSe lateral heterostructure nanobelts by a two-step physical vapor transport method
Nanotechnology 21, 14() 5
Charnvanichborikarn S, Villis B, Johnson B, Wong-Leung J, McCallum J, Williams J, Jagadish AC C
Effect of boron on interstitial-related luminescence centers in silicon
Applied Physics Letters 96, 1() 051906
Barik S, Tan H, Wong-Leung J, Jagadish AC C
Growth and characterization of self-assembled InAs/InP quantum dot structures
Journal of Nanoscience and Nanotechnology 10, 3() 1525-1536
Amaratunga V, Premaratne M, Tan H, Hattori H, Jagadish AC C
Performance assessment of hybrid surface emitting lasers with lateral one-dimensional photonic-crystal mirrors
Journal of the Optical Society of America B 27, 4() 806-817
Dong H, Chen Z, Sun L, Xie W, Tan H, Lu J, Jagadish AC C, Shen X
Single-crystalline hexagonal ZnO microtube optical resonators
Journal of Materials Chemistry 20, 26() 5510-5515
Kang J, Gao Q, Joyce H, Tan H, Jagadish AC C, Kim Y, Choi D, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Novel growth and properties of GaAs nanowires on Si substrates
Nanotechnology 21, 3() 1-6
Handapangoda D, Rukhlenko I, Premaratne M, Jagadish AC C
Optimization of gain-assisted waveguiding in metal-dielectric nanowires
Optics Letters 35, 24() 4190-4192
Kang J, Gao Q, Joyce H, Tan H, Jagadish AC C, Kim Y, Choi D, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Novel growth and properties of GaAs nanowires on Si substrates
Nanotechnology 21, 3() 1-6
Jung J, Yoon H, Kim Y, Song M, Kim Y, Chen Z, Zou J, Choi D, Kang J, Joyce H, Gao Q, Tan H, Jagadish AC C
Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers
Nanotechnology 21, 29() 295602
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y
Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
Journal of Applied Physics 105, 073503() 1-4
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y
Evolution of wurtzite structured GaAs shells around InAs nanowire cores
Nanoscale Research Letters 4, 8() 846-849
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y
Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures
Angewandte Chemie International Edition 48, 4() 780-783
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y
Formation of Hierarchical InAs Nanoring/GaAs Nanowire Heterostructures
Angewandte Chemie International Edition 48, 4() 780-783
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y
Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
Journal of Applied Physics 105, 073503() 1-4
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Nanoscale Research Letters 4, 8() 846-849
Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce H, Gao Q, Tan H, Jagadish AC C
Evolution of epitaxial InAs nanowires on GaAs (111)B
Small 5, 3() 366-369
Xu H, Guo Y, Wang Y, Zou J, Kang J, Gao Q, Tan H, Jagadish AC C
Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si
Journal of Applied Physics 106, 083514() 1-4
Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce H, Gao Q, Tan H, Jagadish AC C
Evolution of Epitaxial InAs Nanowires on GaAs (111)B
Small 5, 3() 366-369
Paiman S, Gao Q, Tan H, Jagadish AC C, Pemasiri K, Montazeri M, Jackson H, Smith L, Yarrison-Rice J, Zhang X, Zou J
The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires
Nanotechnology 20, 22() 7
Xu H, Guo Y, Wang Y, Zou J, Kang J, Gao Q, Tan H, Jagadish AC C
Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si
Journal of Applied Physics 106, 083514() 1-4
Wen X, Davis J, Dao L, Hannaford P, Coleman V, Tan H, Jagadish AC C, Koike K, Sasa S, Inoue M, Yano M
Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing
Journal of Luminescence 129, 2() 153-157
Reece P, Paiman S, Abdul-Nabi O, Gao Q, Gal M, Tan H, Jagadish AC C
Combined optical trapping and microphotoluminescence of single InP nanowires
Applied Physics Letters 95, 10() 101109-1 - 101109-3
Rukhlenko I, Handapangoda D, Premaratne M, Fedorov A, Baranov A, Jagadish AC C
Spontaneous emission of guided polaritons by quantum dot coupled to metallic nanowire: Beyond the dipole approximation
Optics Express 17, 20() 17570-1
Pemasiri K, Montazeri M, Gass R, Smith L, Jackson H, Yarrison-Rice J, Paiman S, Gao Q, Tan H, Jagadish AC C, Zhang X, Zou J
Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures
Nano Letters 9, 2() 648-654
Minovich A, Hattori H, McKerracher I, Tan H, Neshev D, Jagadish AC C, Kivshar Y
Enhanced transmission of light through periodic and chirped lattices of nanoholes
Optics Communications 282() 2023-2027
Hall C, Dao L, Koike K, Sasa S, Tan H, Inoue M, Yano M, Hannaford P, Jagadish AC C, Davis J
Recombination dynamics and screening of the internal electric field in ZnO/ZnxMg1-xO multiple quantum wells
Physical Review B: Condensed Matter and Materials 80, 23() 6
Hattori H, Liu D, Tan H, Jagadish AC C
Large Square Resonator Laser With Quasi-Single-Mode Operation
IEEE Photonics Technology Letters 21, 6() 359-361
Dong H, Chen Z, Sun L, Zhong L, Ling Y, Yu C, Tan H, Jagadish AC C, Shen X
Nanosheets-Based Rhombohedral In2O3 3D Hierarchical Microspheres: Synthesis, Growth Mechanism, and Optical Properties
Journal of Physical Chemistry C 113, 24() 10511-10516
Mokkapati S, Jagadish AC C
III-V Compound SC for Optoelectronic Devices
Materials Today 12, 4() 22-32
Amaratunga V, Hattori H, Premaratne M, Tan H, Jagadish AC C
Directional Optically Pumped Laterally Coupled DFB Lasers With Circular Mirrors
Journal of Lightwave Technology 27, 11() 1425-1433
Davis J, Jagadish AC C
Ultrafast spectroscopy of ZnO/ZnMgO quantum wells
Laser and Photonics Reviews 3, 1-2() 85-96
Dong H, Chen Z, Sun L, Lu J, Xie W, Tan H, Jagadish AC C, Shen X
Whispering gallery modes in indium oxide hexagonal microcavities
Applied Physics Letters 94, 173115() 1-3
Liu D, Hattori H, Fu L, Tan H, Jagadish AC C
Coupling Analysis of GaAs-Based Microdisk Lasers With Different External Claddings
Journal of Lightwave Technology 27, 22() 5090-5098
Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y, Fickenscher M, Perera S, Hoang T, Smith L, Jackson H, Yarrison-Rice J, Zhang X, Zou J
Unexpected Benefits of Rapid Growth Rate for III-V Nanowires
Nano Letters 9, 2() 695-701
Liu D, Hattori H, Fu L, Tan H, Jagadish AC C
Single-mode operation of a large optically pumped triangular laser with lateral air trenches
Journal of the Optical Society of America B 26, 7() 1417-1422
Maharjan A, Pemasiri K, Kumar P, Wade A, Smith L, Jackson H, Yarrison-Rice J, Kogan A, Paiman S, Gao Q, Tan H, Jagadish AC C
Room temperature photocurrent spectroscopy of single zincblende and wurtzite InP nanowires
Applied Physics Letters 94, 19() 3
Paladugu M, Zou J, Guo Y, Zhang X, Kim Y, Joyce H, Gao Q, Tan H, Jagadish AC C
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
Applied Physics Letters 93, 101911() 1-3
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y
Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
Applied Physics Letters 93, 201908() 1-3
Paladugu M, Zou J, Guo Y, Zhang X, Kim Y, Joyce H, Gao Q, Tan H, Jagadish AC C
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
Applied Physics Letters 93, 101911() 1-3
Mokkapati S, Wong-Leung J, Tan H, Jagadish AC C, McBean K, Phillips M
Tuning the bandgap of InAs quantum dots by selective-area MOCVD
Journal of Physics D: Applied Physics 41, 085104() 1-4
Paladugu M, Zou J, Guo Y, Zhang X, Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y
Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
Applied Physics Letters 93, 201908() 1-3
Wong-Leung J, Janson M, Kuznetsov A, Svensson B, Linnarsson M, Hallen A, Jagadish AC C, Cockayne D
Ion implantation in 4H-SiC
Nuclear Instruments and Methods in Physics Research: Section B 266() 1367-1372
Zubiaga A, Tuomisto F, Coleman V, Tan H, Jagadish AC C, Koike K, Sasa S, Inoue M, Yano M
Mechanisms of electrical isolation in O+-irradiated ZnO
Physical Review B: Condensed Matter and Materials 78, 3() 1-5
Zubiaga A, Tuomisto F, Coleman V, Jagadish AC C
Clusterization of vacancy defects in ZnO irradiated with 2 MeV O+
Applied Surface Science 255() 234-236
Wen X, Dao L, Hannaford P, Mokkapati S, Tan H, Jagadish AC C
Electron dynamics in modulation p-doped InGaAs/GaAs quantum dots
European Physical Journal B 62() 65-70
Li Q, Barik S, Tan H, Jagadish AC C
Effect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots
Journal of Physics D: Applied Physics 41, 205107() 1-6
Perera S, Fickenscher M, Jackson H, Smith L, Yarrison-Rice J, Joyce H, Gao Q, Tan H, Jagadish AC C, Zhang X, Zou J
Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
Applied Physics Letters 93, 5() 1-3
Song M, Jung J, Kim Y, Wang Y, Zou J, Joyce H, Gao Q, Tan H, Jagadish AC C
Vertically standing Ge nanowires on GaAs(110) substrates
Nanotechnology 19, 125602() 1-6
Burgess T, Jagadish AC C
Nanoscale Materials: How Small is Big
Proceedings of the IEEE 96, 12() 1895-1897
Castro-Camus E, Fu L, Lloyd-Hughes J, Tan H, Jagadish AC C, Johnston M
Photoconductive response correction for detectors of terahertz radiation
Journal of Applied Physics 104, 053113() 1-7
Buda M, Iordache G, Mokkapati S, Tan H, Jagadish AC C, Stancu V, Botila T
Capacitance spectroscopy study of InGaAs/GaAs quantum dot structures
Journal of Optoelectronics and Advanced Materials 10, 2() 323-326
Amaratunga V, Hattori H, Premaratne M, Tan H, Jagadish AC C
Photonic crystal phase detectors
Journal of the Optical Society of America B 25, 9() 1532-1536
Davis J, Dao L, Wen X, Ticknor C, Hannaford P, Coleman V, Tan H, Jagadish AC C, Koike K, Sasa S, Inoue M, Yano M
Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing
Nanotechnology 19, 5() 1-4
Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y, Fickenscher M, Perera S, Hoang T, Smith L, Jackson H, Yarrison-Rice J, Zhang X, Zou J
High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization
Advanced Functional Materials 18() 3794-3800
Parkinson P, Lloyd-Hughes J, Gao Q, Tan H, Jagadish AC C, Johnston M, Herz L
Transient Terahertz Conductivity of GaAs Nanowires
Nano Letters 7, 7() 2162-2165
Sathish N, Dhamodaran S, Pathak A, Krishna G, Khan S, Avasthi D, Pandey A, Muralidharan R, Jagadish AC C, Li G
HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers
Nuclear Instruments and Methods in Physics Research: Section B 256() 281-287
Parkinson P, Lloyd-Hughes J, Gao Q, Tan H, Jagadish AC C, Johnston M, Herz L
Transient Terahertz Conductivity of GaAs Nanowires
Nano Letters 7, 7() 2162-2165
Paladugu M, Zou J, Guo Y, Auchterlonie G, Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
Small 3, 11() 1873-1877
Paladugu M, Zou J, Auchterlonie G, Guo Y, Kim Y, Joyce H, Gao Q, Tan H, Jagadish AC C
Evolution of InAs branches in InAs/GaAs nanowire heterostructures
Applied Physics Letters 91, 13() 133115 1-3
Titova L, Hoang T, Yarrison-Rice J, Jackson H, Kim Y, Joyce H, Gao Q, Tan H, Jagadish AC C, Zhang X, Zou J, Smith L
Dynamics of Strongly Degenerate Electron-Hole Plasmas and Excitons in Single InP Nanowires
Nano Letters 7, 11() 3383-3387
Paladugu M, Zou J, Auchterlonie G, Guo Y, Kim Y, Joyce H, Gao Q, Tan H, Jagadish AC C
Evolution of InAs branches in InAs/GaAs nanowire heterostructures
Applied Physics Letters 91, 13() 133115 1-3
Paladugu M, Zou J, Guo Y, Auchterlonie G, Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
Small 3, 11() 1873-1877
Kim Y, Joyce H, Jagadish AC C
Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
AIP Conference Proceedings 893() 869-870
Guo Y, Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y
Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process
Nano Letters 7, 4() 921-926
Zou J, Paladugu M, Wang H, Auchterlonie G, Guo Y, Kim Y, Gao Q, Joyce H, Tan H, Jagadish AC C
Growth Mechanism of Truncated Triangular III-V Nanowires
Small 3, 3() 389-393
Zou J, Paladugu M, Wang H, Auchterlonie G, Guo Y, Kim Y, Gao Q, Joyce H, Tan H, Jagadish AC C
Growth mechanism of truncated triangular III-V nanowires
Small 3, 3() 389-393
Wen X, Davis J, Dao L, Hannaford P, Coleman V, Tan H, Jagadish AC C, Koike K, Sasa S, Inoue M, Yano M
Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells
Applied Physics Letters 90() 221914/ 1-3
Wen X, Davis J, McDonald D, Dao L, Hannaford P, Coleman V, Tan H, Jagadish AC C, Koike K, Sasa S, Inoue M, Yano M
Ultrafast dynamics in ZnO/ZnMgO multiple quantum wells
Nanotechnology 18() 315403 1-5
Wen X, Dao L, Davis J, Hannaford P, Mokkapati S, Tan H, Jagadish AC C
Carrier dynamics in p-type InGaAs/GaAs quantum dots
Journal of Materials Science: Materials in Electronics 18() S363-S365
Wen X, Dao L, Hannaford P, Mokkapati S, Tan H, Jagadish AC C
The state filling effect in p-doped InGaAs/GaAs quantum dots
Journal of Physics: Condensed Matter 19() 386213/ 1-10
Castro-Camus E, Lloyd-Hughes J, Fu L, Tan H, Jagadish AC C, Johnston M
An ion-implanted InP receiver for polarization resolved terahertz spectroscopy
Optics Express 15, 11() 1-11
Mokkapati S, Du S, Buda M, Fu L, Tan H, Jagadish AC C
Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
Nanoscale Research Letters 2() 550-553
Hattori H, McKerracher I, Tan H, Jagadish AC C, De La Rue R
In-plane coupling of light from InP-based photonic crystal band-edge lasers into single-mode waveguides
IEEE Journal of Quantum Electronics 43, 4() 279-286
Mishra A, Titova L, Hoang T, Jackson H, Smith L, Yarrison-Rice J, Kim Y, Joyce H, Gao Q, Tan H, Jagadish AC C
Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
Applied Physics Letters 91() 263104 1-3
Kim Y, Song M, Kim Y, Jung J, Gao Q, Tan H, Jagadish AC C
Epitaxial Germanium Nanowires on GaAs Grown by Chemical Vapor Deposition
Journal of the Korean Physical Society 51, 1() 120-124
Matsik S, Rinzan M, Perera A, Tan H, Jagadish AC C, Liu H
Effects of a p-n junction on heterojunction far infrared detectors
Infrared Physics and Technology 50() 274-278
Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y, Zhang X, Guo Y, Zou J
Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process
Nano Letters 7, 4() 921-926
Hoang T, Titova L, Yarrison-Rice J, Jackson H, Govorov A, Kim Y, Joyce H, Tan H, Jagadish AC C, Smith L
Resonant Excitation and Imaging of Nonequilibrium Exciton Spins in Single Core-Shell GaAs-AlGaAs Nanowires
Nano Letters 7, 3() 588-595
Laird J, Jagadish AC C, Jamieson D, Legge G
Scanning Ion Deep Level Transient Spectroscopy: II. Ion Irradiated Au-Si Schottky Junctions
Journal of Physics D: Applied Physics 39() 1352-1362
Petravic M, Deenapanray P, Coleman V, Jagadish AC C, Kim K, Kim B, Koike K, Sasa S, Inoue M, Yano M
Chemical States of Nitrogen in ZnO Studied by near-edge X-ray Absorption Fine Structure and Core-level Photoemission Spectroscopies
Surface Science 600() L81-L85
Laird J, Jagadish AC C, Jamieson D, Legge G
Scanning Ion Deep Level Transient Spectroscopy: I. Theory
Journal of Physics D: Applied Physics 39() 1342-1351
Siegert J, Marcinkevicius S, Fu L, Jagadish AC C
Recombination Properties of Si-doped InGaAs/GaAs Quantum Dots
Nanotechnology 17() 5373-5377
Titova L, Hoang T, Jackson H, Smith L, Yarrison-Rice J, Kim Y, Joyce H, Tan H, Jagadish AC C
Temperature Dependence of Photoluminescence from Single Core-shell GaAs-AlGaAs Nanowires
Applied Physics Letters 89, 17() 173126-1-3
Kim Y, Joyce H, Gao Q, Tan H, Jagadish AC C, Paladugu M, Zou J, Suvorova A
Influence of Nanowire Density on the Shape and Optical Properties of Ternary InGaAs Nanowires
Nano Letters 6, 4() 599-604
Tan H, Sears K, Mokkapati S, Fu L, Kim Y, McGowan P, Buda M, Jagadish AC C
Quantum Dots and Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronic Device Applications
IEEE Journal on Selected Topics in Quantum Electronics 12, 6() 1242-1254
Gareso P, Buda M, Tan H, Jagadish AC C, Ilyas S, Gal M
On Quantifying the Group-V to Group-III Interdiffusion Rates in InxGa1-xAs/InP Quantum Wells
Semiconductor Science and Technology 21() 829-832
Huang S, Chen Z, Wang F, Shen S, Tan H, Fu L, Fraser M, Jagadish AC C
Carrier Transfer and Magneto-transport in Single Modulation-doped V-grooved Quantum Wire modified by Ion Implantation
Journal of Luminescence 119-120() 198-203
Davis J, Dao L, Wen X, Hannaford P, Coleman V, Tan H, Jagadish AC C, Koike K, Sasa S, Inoue M, Yano M
Observation of Coherent Biexcitons in ZnO/ZnMgO Multiple Quantum Wells at Room Temperature
Applied Physics Letters 89, 18() 182109-1-3
Coleman V, Buda M, Tan H, Jagadish AC C, Phillips M, Koike K, Sasa S, Inoue M, Yano M
Observation of Blue Shifts in ZnO/ZnMgO Multiple Quantum Well Structures by Ion-implantation Induced Intermixing
Semiconductor Science and Technology 21() L25-L28
Huang S, Chen Z, Bai L, Chen X, Tan H, Fu L, Fraser M, Jagadish AC C
Micro-photoluminescence Confocal Mapping of Single V-grooved GaAs Quantum Wire
Chinese Physics Letters 23, 12() 3341-3344
Gareso P, Buda M, Petravic M, Tan H, Jagadish AC C
Effect of Rapid Thermal Annealing on the Atomic Intermixing of Zn- and C-Doped InGaAs/AlGaAs Quantum Well Laser Structures
Journal of the Electrochemical Society 153, 9() G879-G882
Gareso P, Buda M, Fu L, Tan H, Jagadish AC C, Dao L, Wen X, Hannaford P
Proton Irradiation-induced Intermixing in InxGa1-xAs/InP Quantum Wells - the Effect of In Composition
Semiconductor Science and Technology 21() 1441-1446
Slotte J, Saarinen K, Janson M, Hallen A, Kuznetsov A, Svensson B, Wong-Leung J, Jagadish AC C
Fluence, Flux and Implantation Temperature Dependence of Ion-Implantation-Induced Defect Production in 4H-SiC
Journal of Applied Physics 97, 3() 033513-1-7
Mokkapati S, McGowan P, Tan H, Jagadish AC C, McBean K, Phillips M
Controlling the Properties of InGaAs Quantum Dots by Selective-Area Epitaxy
Applied Physics Letters 86, 11() 113102-1-3
Coleman V, Tan H, Jagadish AC C, Kucheyev S, Zou J
Thermal Stability of Ion-Implanted ZnO
Applied Physics Letters 87, 23() 231912-1-3
Gao Q, Buda M, Tan H, Jagadish AC C
Room-Temperature Preperation of InGaAsN Quantum Dot Lasers Grown by MOCVD
Electrochemical and Solid-State Letters 8, 2() G57-G59
Castro-Camus E, Lloyd-Hughes J, Johnston M, Fraser M, Tan H, Jagadish AC C
Polarization-Sensitive Terahertz Detection by Multicontact Photoconductive Receivers
Applied Physics Letters 86, 25() 254102-1-3
Coleman V, Bradby J, Jagadish AC C, Munroe P, Heo Y, Pearton S, Norton D, Inoue M, Yano M
Mechanical Properties of ZnO Epitaxial Layers Grown on a- and c-axis Sapphire
Applied Physics Letters 86, 20() 203105-1-3
Deenapanray P, Petravic M, Jagadish AC C, Krispin M, Auret F
Electrical Characterization of p-GaAs Epilayers Disordered by Doped Spin-On-Glass
Journal of Applied Physics 97, 3() 033524-1-7
Fu L, McGowan P, Tan H, Jagadish AC C, Reece P, Gal M
Study of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration
IEE Proceedings - Circuits, Devices and Systems 152, 5() 491-496
McGowan P, Buda M, Tan H, Jagadish AC C
Investigation of the Blueshift in Electroluminescence Spectra from MOCVD Grown InGaAs Quantum Dots
IEEE Journal of Quantum Electronics 40, 10() 1410-1416
McGowan P, Buda M, Tan H, Jagadish AC C
Characteristics of MOCVD-Grown Thin p-Clad InGaAs Quantum-Dot Lasers
IEEE Photonics Technology Letters 16, 12() 2589-2591
Lloyd-Hughes J, Castro-Camus E, Fraser M, Jagadish AC C, Johnston M
Carrier Dynamics in Ion-Implanted GaAs Studied by Simulation and Observation of Terahertz Emission
Physical Review B: Condensed Matter and Materials 70() 235330-1-6
Fraser M, Jagadish AC C
Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
Physical Review B: Condensed Matter and Materials 70, 23() 1-6
Li X, Li N, Demiguel S, Zheng X, Campbell J, Tan H, Jagadish AC C
A Partially Depleted Absorber Photodiode with Graded Doping Injection Regions
IEEE Photonics Technology Letters 16, 10() 2326-2328
Presenti G, Boudinov H, Carmody C, Jagadish AC C
Variable Temperature Hall-effect Measurements in Ion Bombarded InP
Nuclear Instruments and Methods in Physics Research: Section B 218() 386-390
Coelho A, Boudinov H, Lippen T, Tan H, Jagadish AC C
Implant Isolation of AlGaAs Multilayer DBR
Nuclear Instruments and Methods in Physics Research: Section B 218() 381-385
Carmody C, Tan H, Jagadish AC C, Douheret O, Maknys K, Anand S, Zou J, Dao L, Gal M
Structural, Electrical, and Optical Analysis of Ion Implanted Semi-insulating InP
Journal of Applied Physics 95, 2() 477-482
Bogaart E, Haverkort J, Mano T, Notzel R, Wolter J, McGowan P, Tan H, Jagadish AC C
Picosecond Time-Resolved Bleaching Dynamics of Self-Assembled Quantum Dots
IEEE Transactions on Nanotechnology 3, 3() 348-352
Gao Q, Tan H, Jagadish AC C, Sun B, Gal M, Ouyang L, Zou J
Metalorganic Chemical Vapor Deposition of GaAsN Epilayers: Microstructures and Optical Properties
Journal of Crystal Growth 264() 92-97
Cohen M, Jagadish AC C
Its All About Speed
IEEE Circuits and Devices 20, 1() 38-43
Kucheyev S, Timmers H, Zou J, Williams J, Jagadish AC C, Li G
Lattice Damage Produced in GaN by Swift Heavy Ions
Journal of Applied Physics 95, 10() 5360-5365
Leveque P, Hallen A, Svensson B, Wong-Leung J, Jagadish AC C, Privitera V
Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon
European Physical Journal - Applied Physics 23() 5-9
Leveque P, Kortegaard-Nielsen H, Pellegrino P, Hallen A, Svensson B, Kuznetsov A, Wong-Leung J, Jagadish AC C, Privitera V
Vacancy and Interstitial Depth Profiles in Ion-implanted Silicon
Journal of Applied Physics 93, 2() 871-877
Kim S, Han I, Chung S, Jagadish AC C
Growth of Triangular Shaped InGaAs/GaAs Quantum Wire Structures
Journal of Materials Science Letters 22() 467-469
Kucheyev S, Williams J, Jagadish AC C, Zou J, Evans C, Nelson A, Hamza A
Ion-Beam-Produced Structural Defects in ZnO
Physical Review B 67, 9() 094115-1-11
Kucheyev S, Jagadish AC C, Williams J, Deenapanray P, Yano M, Koike K, Sasa S, Inoue M, Ogata K
Implant Isolation of ZnO
Journal of Applied Physics 93, 5() 2972-2976
Wang Y, Zou J, Kucheyev S, Williams J, Jagadish AC C, Li G
Nature of Planar Defects in Ion-implanted GaN
Electrochemical and Solid-State Letters 6, 3() G34-G36
Jagadish AC C
Nano-optoelectronics
Australian Physics 40, 1() 26-
Ip K, Overberg M, Heo Y, Norton D, Pearton S, Stutz C, Kucheyev S, Jagadish AC C, Williams J, Luo B, Ren F, Look D, Zavada J
Hydrogen Incorporation, Diffusivity and Evolution in Bulk ZnO
Solid-State Electronics 47() 2255-2259
Sun B, Gal M, Gao Q, Tan H, Jagadish AC C, Puzzer T, Ouyang L, Zou J
Epitaxially Grown GaAsN Random Laser
Journal of Applied Physics 93, 10() 5855-5858
Linnarsson M, Zimmermann U, Wong-Leung J, Schoner A, Janson M, Jagadish AC C, Svensson B
Solubility Limits of Dopants in 4H-SiC
Applied Surface Science 203-204() 427-432
Li Z, Lu W, Liu Q, Chen X, Shen S, Fu Y, Willander M, Tan H, Jagadish AC C
Determination of Carrier-transfer Length from Side-wall Quantum Well to Quantum Wire by Micro-photoluminescence Scanning
Journal of Electronic Materials 32, 8() 913-916
Deenapanray P, Svensson B, Tan H, Jagadish AC C
A Comparison of Low-energy As Ion Implantation and Impurity-free Disordering Induced Defects in N-type GaAs Epitaxial Layers
Japanese Journal of Applied Physics 42, 3() 1158-1163
Ip K, Overberg M, Baik K, Wilson R, Kucheyev S, Williams J, Jagadish AC C, Ren F, Heo Y, Norton D, Zavada J, Pearton S
ICP Dry Etching of ZnO and Effects of Hydrogen
Solid-State Electronics 47() 2289-2294
Buda M, Hay J, Tan H, Fu L, Jagadish AC C, Reece P, Gal M
Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures
Journal of the Electrochemical Society 150, 8() G481-G487
Carmody C, Tan H, Jagadish AC C, Gaarder A, Marcinkevicius S
Ultrafast carrier trapping and recombination in highly resistive ion implanted InP
Journal of Applied Physics 94, 2() 1074-1078
Carmody C, Tan H, Jagadish AC C, Gaarder A, Marcinkevicius S
Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
Applied Physics Letters 82, 22() 3913-3915
Deenapanray P, Coleman V, Jagadish AC C
Electrical Characterization of Impurity-free Disordered p-type GaAs
Electrochemical and Solid-State Letters 6, 3() G37-G40
Deenapanray P, Tan H, Jagadish AC C
Electrical Characterization of Impurity-free Disordering-induced Defects in n-GaAs using Native Oxide Layers
Applied Physics A: Materials Science and Processing 76() 961-964
Deenapanray P, Deenapanray P, Meyer W, Auret F, Krispin M, Jagadish AC C
Electron emission properties of a defect at ~(Ec�0.23eV) in impurity-free disorded n-GaAs
Physica B 340-342() 315-319
Gao Q, Tan H, Jagadish AC C, Deenapanray P
Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition
Japanese Journal of Applied Physics 42() 6827-6832
Lippen T, Boudinov H, Tan H, Jagadish AC C
Electrical Isolation of AlxGa1-xAs by Ion Irradiation
Applied Physics Letters 80() 264-266
Lederer M, Hildebrandt M, Kolev V, Luther-Davies B, Taylor B, Dawes J, Dekker P, Piper J, Tan H, Jagadish AC C
Passive Mode Locking of a Self-frequency-doubling Yb:Yal3 (BO3)4 Laser
Optics Letters 27, 6() 436-438
Kucheyev S, Williams J, Zou J, Li G, Jagadish AC C, Titov A
Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature
Nuclear Instruments and Methods in Physics Research: Section B 190() 782-786
Monakhov E, Wong-Leung J, Kuznetsov A, Jagadish AC C, Svensson B
Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation
Physical Review B 65() 245201-1-9
Kucheyev S, Williams J, Zou J, Jagadish AC C, Pophristic M, Guo S, Ferguson I, Manasreh M
Ion-beam-produced Damage and its Stability in AIN Films
Journal of Applied Physics 92, 7() 3554-3558
Williams J, Jagadish AC C, Li G
Structural disorder in ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5() 787-789
Sun B, Gal M, Gao Q, Tan H, Jagadish AC C
On the Nature of Radiative Recombination in GaAsN
Applied Physics Letters 81, 23() 4368-4370
Pellegrino P, Leveque P, Kortegaard-Nielsen H, Hallen A, Wong-Leung J, Jagadish AC C, Svensson B
Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon
Nuclear Instruments and Methods in Physics Research: Section B 186() 334-338
Kucheyev S, Williams J, Zou J, Li G, Jagadish AC C, Manasreh M, Pophristic M, Guo S, Ferguson I
Structural Disorder in Ion-implanted AlxGa1-xN
Applied Physics Letters 80, 5() 787-789
Deenapanray P, Martin A, McGowan P, Jagadish AC C
On the Pulsed Anodic Oxidation of n+-InP
Electrochemical and Solid-State Letters 5, 6() G41-G44
Bradby J, Kucheyev S, Williams J, Jagadish AC C, Swain M, Munroe P, Phillips M
Contact-induced Defect Propagation in ZnO
Applied Physics Letters 80, 24() 4537-4539
Kucheyev S, Williams J, Jagadish AC C, Zou J, Li G
Blistering of H-implanted GaN
Journal of Applied Physics 91, 6() 3928-3930
Carmody C, Boudinov H, Tan H, Jagadish AC C, Lederer M, Kolev V, Luther-Davies B, Dao L, Gal M
Ultrafast Trapping Times in Ion Implanted InP
Journal of Applied Physics 92, 5() 2420-2423
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish AC C, Li G
X-ray Spectrometry Investigation of Electrical Isolation in GaN
Journal of Applied Physics 91, 6() 3940-3942
Gal M, Dao L, Kraft E, Johnston M, Carmody C, Tan H, Jagadish AC C
Thermally Stimulated Luminescence in Ion-Implanted GaAs
Journal of Luminescence 96() 287-293
Kucheyev S, Deenapanray P, Jagadish AC C, Williams J, Yano M, Koike K, Sasa S, Inoue M, Ogata K
Electrical Isolation of ZnO by Ion Bombardment
Applied Physics Letters 81, 18() 3350-3352
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish AC C, Li G
Chemical Origin of the Yellow Luminescence in GaN
Journal of Applied Physics 91, 9() 5857-5874
Ip K, Overberg M, Heo Y, Norton D, Pearton S, Kucheyev S, Jagadish AC C, Williams J, Wilson R, Zavada J
Thermal Stability of Ion-implanted Hydrogen in ZnO
Applied Physics Letters 81, 21() 3996-3998
Liu X, Lu W, Shen S, Tan H, Jagadish AC C, Zou J
Application of Selective Implantation in AIGaAs/InGaAs/GaAs Pseudomorphic Single Quantum Wire Structures
Nanotechnology 1() 389-392
Lu W, Liu Q, Li Z, Shen S, Zhao Q, Fu Y, Willander M, Tan H, Jagadish AC C, Zou J, Cockayne D
Carrier transfer between V-grooved quantum wire and vertical quantum well
Physics Letters A 280() 77-80
Pellegrino P, Leveque P, Lalita J, Hallen A, Jagadish AC C, Svensson B
Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Physical Review B 64() 195211/1-10
Kuznetsov A, Janson M, Hallen A, Svensson B, Jagadish AC C, Grunleitner H, Pensl G
Channeling Measurements of Ion Implantation Damage in 4H-SiC
Materials Science Forum 353-356() 595-598
Li N, Fu L, Li N, Chan Y, Lu W, Shen S, Tan H, Jagadish AC C
The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
Journal of Crystal Growth 222() 786-790
Deenapanray P, Jagadish AC C
Impurity-free intermixing of GaAs/AIGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5() 1962-1966
Kucheyev S, Williams J, Zou J, Jagadish AC C, Li G
High-dose ion implantation into GaN
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 214-218
Deenapanray P, Martin A, Jagadish AC C
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16() 2561-2563
Svensson B, Hallen A, Linnarsson M, Kuznetsov A, Janson M, Aberg D, Osterman J, Persson P, Hultman L, Storasta L, Carlsson F, Bergman J, Jagadish AC C, Morvan E
Doping of Silicon Carbide by Ion Implantation
Materials Science Forum 353-356() 549-554
Boudinov H, de Souza J, Jagadish AC C
Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability
Nuclear Instruments and Methods in Physics Research: Section B 175-177() 235-240
Deenapanray P, Jagadish AC C
Effect of Stress on Impurity-free quantum well intermixing
Electrochemical and Solid-State Letters 4() G11-G13
Boudinov H, Kucheyev S, Williams J, Jagadish AC C, Li G
Electrical isolation of GaN by MeV ion irradiation
Applied Physics Letters 78, 7() 943-945
Dao L, Gal M, Fu L, Tan H, Jagadish AC C
Possibility of improved frequency response from intermixed quantum-well devices
Superlattices and Microstructures 29, 2() 105-110
Fu Y, Willander M, Liu Q, Lu W, Shen S, Tan H, Jagadish AC C, Zou J, Cockayne D
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
Journal of Applied Physics 89, 4() 2351-2356
Deenapanray P, Martin A, Jagadish AC C
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Applied Physics Letters 79, 16() 2561-2563
Fu L, Tan H, Jagadish AC C, Li N, Li N, Liu Q, Lu W, Shen S
Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing
Infrared Physics and Technology 42() 171-175
Cohen M, Allerman A, Choquette K, Jagadish AC C
Electrically Steerable Lasers using Wide-Aperture VCSELs
IEEE Photonics Technology Letters 13, 6() 544-546
Gal M, Wengler M, Ilyas S, Rofii I, Tan H, Jagadish AC C
Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler
Nuclear Instruments and Methods in Physics Research: Section B 173() 528-532
Kucheyev S, Williams J, Zou J, Jagadish AC C, Li G
The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN
Nuclear Instruments and Methods in Physics Research: Section B 178() 209-213
Kucheyev S, Williams J, Zou J, Bradby J, Jagadish AC C, Li G
Ion-beam-induced reconstruction of amorphous GaN
Physical Review B 63() 113202-1-4
Kucheyev S, Williams J, Jagadish AC C, Zou J, Li G, Titov A
Effect of ion species on the accumulation of ion-beam damage in GaN
Physical Review B 64() 035202/1-10
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish AC C
Effects of excitation density on cathodoluminescence from GaN
Applied Physics Letters 79, 14() 2154-2156
Giniunas L, Danielius R, Tan H, Jagadish AC C, Adomavicius R, Krotkus A
Electron and trap dynamics in As-ion-implanted and annealed GaAs
Applied Physics Letters 78, 12() 1667-1669
Kucheyev S, Bradby J, Williams J, Jagadish AC C, Swain M, Li G
Deformation Behavior of Ion-Beam-Modified GaN
Applied Physics Letters 78, 2() 156-158
Kucheyev S, Toth M, Phillips M, Williams J, Jagadish AC C, Li G
Cathodoluminescence Depth Profiling of Ion-Implanted GaN
Applied Physics Letters 78, 1() 34-36
Deenapanray P, Jagadish AC C
Impurity free intermixing of GaAs/AlGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate
Journal of Vacuum Science and Technology B 19, 5() 1962-1966
Wong-Leung J, Fatima S, Jagadish AC C, Fitzgerald J
Effect of implant temperature on extended defects created by ion implantation in silicon
Defects and Diffusion Forum Part A: Defect and Diffusion Forum 183, 1() 163-169
Marcinkevicius S, Jagadish AC C, Tan H, Kaminska M, Korona K, Adomavicius R, Krotkus A
Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers
Applied Physics Letters 76() 1306-1308
Schmidt D, Svensson B, Seibt M, Jagadish AC C, Davies G
Photoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Micrsocopy Measurements on MeV Self-Ion Implanted and Annealed n-type Silicon
Journal of Applied Physics 88() 2309-2317
Toth M, Kucheyev S, Williams J, Jagadish AC C, Phillips M, Li G
Imaging Charge Trap Distributions in GaN Using Environmental Scanning Electron Micrsocopy
Applied Physics Letters 77() 1342-1344
Wong-Leung J, Fatima S, Jagadish AC C, Fitzgerald J, Chou C, Zou J, Cockayne D
Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon
Journal of Applied Physics 88() 1312-1318
Tan H, Williams J, Jagadish AC C
The use of micro-raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
MRS Internet Journal of Nitride Semiconductor Research 5, SUPPL. 1()
Williams J, Jagadish AC C
The use of micro-raman spectroscopy to monitor high-pressure hightemperature annealing of ion-implanted GaN films
Materials Research Society Symposium Proceedings 595() W11461-W11466
Liu Q, Lu W, Chen X, Shen S, Tan H, Yuan S, Jagadish AC C, Johnston M, Dao L, Gal M, Zou J, Cockayne D
Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
Journal of Applied Physics 87() 1566-1568
Williams J, Jagadish AC C
Ion-beam-induced dissociation and bubble formation in GaN
Applied Physics Letters 77, 22() 3577-3579
Tan H, Jagadish AC C
The micro-photoluminescence of a single V-groove GaAs/AlGaAs quantum wire
Wuli Xuebao/Acta Physica Sinica 49, 9() 1812-1813
Tan H, Jagadish AC C
Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures
Japanese Journal of Applied Physics 39, 9 A() 5124-5127
Deenapanray P, Tan H, Gaff K, Petravic M, Jagadish AC C
Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147, 5() 1950-1956
Zhao Q, Willander M, Lu W, Liu Q, Shen S, Tan H, Jagadish AC C, Zou J, Cockayne D
Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
Journal of Applied Physics 88() 2519-2522
Gingrich H, Morath C, Manasreh M, Ballet P, Smathers J, Salamo G, Jagadish AC C
Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/A10.3Ga0.7As Multiple Quantum Wells
Materials Research Society Symposium Proceedings 607() 217-222
Fu Y, Willander M, Lu W, Liu Q, Shen S, Jagadish AC C, Gal M, Zou J, Cockayne D
Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
Physical Review B 61() 8306-8311
Fu L, Deenapanray P, Tan H, Jagadish AC C, Dao L, Gal M
Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing
Applied Physics Letters 76() 837-839
Hegeler F, Manasreh M, Morath C, Ballet P, Yang H, Salamo G, Tan H, Jagadish AC C
Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells
Applied Physics Letters 77() 2867-2869
Kuball M, Hayes J, Suski T, Jun J, Leszczynski M, Domagala J, Tan H, Williams J, Jagadish AC C
High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering
Journal of Applied Physics 87() 2736-2741
Kucheyev S, Williams J, Jagadish AC C, Li G, Pearton S
Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN
Applied Physics Letters 76() 3899-3901
Kucheyev S, Bradby J, Williams J, Jagadish AC C, Toth M, Phillips M, Swain M
Nanoindentation of Epitaxial GaN Films
Applied Physics Letters 77() 3373-3375
Deenapanray P, Tan H, Jagadish AC C, Auret F
Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition
Applied Physics Letters 77() 696-698
Deenapanray P, Tan H, Jagadish AC C, Auret F
Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers
Journal of Applied Physics 88() 5255-5261
Dao L, Gal M, Li G, Jagadish AC C
Photoluminescence in delta-doped InGaAs/GaAs single quantum wells
Journal of Applied Physics 87() 3896-3899
Dao L, Gal M, Carmody C, Tan H, Jagadish AC C
A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells
Journal of Applied Physics 88() 5252-5254
Liu Q, Li Z, Chen X, Lu W, Shen S, Tan H, Yuan S, Jagadish AC C
Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures
Physics Letters A 271() 213-216
Deenapanray P, Fu L, Petravic M, Jagadish AC C, Gong B, Lamb R
Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells
Surface and Interface Analysis 29() 754-760
Deenapanray P, Tan H, Jagadish AC C
Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells
Materials Research Society Symposium Proceedings 607() 491-502
Deenapanray P, Tan H, Cohen M, Gaff K, Gaff K, Petravic M, Jagadish AC C
Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells
Journal of the Electrochemical Society 147() 1950-1956
Kucheyev S, Williams J, Jagadish AC C, Zou J, Craig V, Li G
Ion-Beam-Induced Porosity of GaN
Applied Physics Letters 77() 1455-1457
Babinski M, Siwiec-Matuszyk J, Baranowski J, Li G, Jagadish AC C
Transport and quantum electron mobility in the modulation Si d-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy
Applied Physics Letters 77() 999-1001
Kucheyev S, Williams J, Zou J, Jagadish AC C, Li G
Ion beam induced dissociation and bubble formation in GaN
Applied Physics Letters 77() 3577-3579
Liu Q, Li N, Li Z, Lu W, Shen S, Fu Y, Willander M, Tan H, Jagadish AC C, Zou J
Investigation of AlGaAs/GaAs V-grooved Quantum Wire Infrared
Japanese Journal of Applied Physics 39() 5124-5127
Kucheyev S, Williams J, Jagadish AC C, Zou J, Li G
Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment
Journal of Applied Physics 88() 5493-5495
Liu Q, Li N, Lu W, Li N, Yuan X, Shen S, Fu L, Tan H, Jagadish AC C
Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing
Japanese Journal of Applied Physics 39() 1687-1689
Jagadish AC C
Scanning ion deep level transient spectroscopy
Nuclear Instruments and Methods in Physics Research: Section B 158, 1() 464-469
Jagadish AC C
Proton irradiation effects on the intersubband transition in GaAs/AlGaAs multiple quantum wells with bulk or superlattice barriers
Applied Physics Letters 75, 4() 525-527
Fu L, Tan H, Jagadish AC C
Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation
Griffith Asia Quarterly () 355-357
Manasreh M, Ballet P, Smathers J, Salamo G, Jagadish AC C
Proton irradiation effects on the inter sub-band transitions in GaAs/AlGaAs multiple quantum wells with bulk and superlattice barriers
Applied Physics Letters 75() 525-527
Jagadish AC C
Selective intermixing of ion irradiated semiconductor heterostructures
Materials Research Society Symposium Proceedings 540() 15-26
Jagadish AC C
Changes in interdiffusion associated with thermally oxidized GaAs
Griffith Asia Quarterly () 218-221
Jagadish AC C, Fu L
Inter-facet noise correlation measurement as a diagnostic tool for semiconductor laser studies
Griffith Asia Quarterly () 236-239
Jagadish AC C, Gal M
Observation of state filling effects in the carrier dynamics of self-assembled quantum dots
Griffith Asia Quarterly () 344-347
Tan H, Jagadish AC C, Gal M
Comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy
Griffith Asia Quarterly () 348-351
Tan H, Fu L, Jagadish AC C
Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence
Griffith Asia Quarterly () 187-190
Tan H, Yuan S, Jagadish AC C, Lu W
Application of selective implantation induced intermixing on V-grooved AlGaAs/GaAs coupled quantum wire
Griffith Asia Quarterly () 513-515
Yuan S, Jagadish AC C, Zou J
TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wells
Griffith Asia Quarterly () 358-360
Yuan S, Tan H, Jagadish AC C, Lu W, Yuan X
Tuning of detection wavelength of GaAs/AlGaAs quantum-well IR photo-detectors by thermal interdiffusion
Griffith Asia Quarterly () 128-130
Tan H, Jagadish AC C
Fabrication and characterization of delta-doped In 0.2Ga 0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy
Griffith Asia Quarterly () 140-143
Tan H, Jagadish AC C
Intermixing induced resonance shift in GaAs/Al xO y DBR resonators
Griffith Asia Quarterly () 365-368
Lederer M, Luther-Davies B, Tan H, Jagadish AC C
Ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers
Griffith Asia Quarterly () 105-108
Lederer M, Luther-Davies B, Tan H, Jagadish AC C
Nonlinear optical properties of ion-implanted GaAs
Griffith Asia Quarterly () 151-153
Lobo C, Jagadish AC C
Optical properties of self-organized InGaAs/GaAs quantum dots in field-effect structures
Materials Research Society Symposium Proceedings 536() 269-274
Fu L, Tan H, Jagadish AC C
Interdiffused quantum-well infrared photodetectors for color sensitive arrays
Applied Physics Letters 75, 7() 923-925
Fu L, Tan H, Jagadish AC C, Gal M
Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices
Griffith Asia Quarterly () 352-354
Lederer M, Luther-Davies B, Tan H, Jagadish AC C, Akhmediev N, Soto-Crespo J
Multipulse Operation of a Ti:sapphire Laser Mode locked by an Ion-Implanted Semiconductor Saturable-Absorber Mirror
Journal of the Optical Society of America B 16, 6() 895-904
Karouta F, Tan H, Jagadish AC C, van Roy B
Vertical Integration of Dual Wavelength Index Guided GaAs-Lasers
Electronics Letters 35() 815-817
Johnston M, Gal M, Chen Z, Liu Q, Li N, Lu W, Shen H, Fu L, Tan H, Jagadish AC C, Li N
Interdiffused quantum well infrared photodetector tuning for colour sensitive arrays
Applied Physics Letters 75() 923-925
Iordache G, Buda M, Acket G, van de Roer T, Kaufmann L, Karouta F, Jagadish AC C, Tan H
Continuous wave operation of low confinement asymmetric structure diode lasers
Electronics Letters 35() 148-149
Fatima S, Jagadish AC C, Wong-Leung J
Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions
Griffith Asia Quarterly () 505-508
Liu Q, Chen X, Lu W, Xu W, Yuan X, Li N, Shen H, Yuan S, Tan H, Jagadish AC C, Li N
Wavelength tuning of GaAs/AlGaAs quantum well infrared photodetectors by thermal interdiffusion
Japanese Journal of Applied Physics 38() 5044-5045
Tan H, Jagadish AC C, Lederer M, Luther-Davies B, Zou J, Cockayne D, Haiml M, Siegner U, Keller U
Role of Implantation-Induced Defects on the Response Time of Semiconductor Saturable Absorbers
Applied Physics Letters 75, 10() 1437-1439
Zhao Q, Willander M, Holtz P, Lu W, Dou H, Shen H, Li G, Jagadish AC C
Radiative recombination in p-type delta doped layers in GaAs
Physical Review B 60() R2193-R2196
Liu Q, Lu W, Li Z, Chen Y, Shen H, Fu Y, Willander M, Tan H, Yuan S, Jagadish AC C, Zou J, Cockayne D
Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealing
Applied Physics Letters 75() 3339-3341
Fu Y, Willander M, Liu Q, Lu W, Shen H, Tan H, Yuan S, Jagadish AC C
Energy Sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As Quantum Wire
Superlattices and Microstructures 26, 5() 307-315
Lederer M, Luther-Davies B, Tan H, Jagadish AC C, Haiml M, Siegner U, Keller U
Nonlinear Optical Absorption and Temporal Response of Arsenic-and Oxygen-Implantated GaAs
Applied Physics Letters 74, 14() 1993-1995
Dou H, Jagadish AC C
Photomodulation spectroscopy of Zn d-doped GaAs
Griffith Asia Quarterly () 519-521
Dou H, Li G, Jagadish AC C
Radiative recombination in p-type d-doped layers in GaAs
Physical Review B 60, 4() R2193-R2196
Fu L, Tan H, Johnston M, Gal M, Jagadish AC C
Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers
Journal of Applied Physics 85() 6786-6789
Deenapanray P, Tan H, Petravic M, Williams J, Jagadish AC C
Characterization of low-temperature PECVD silicon dioxide films
Materials Research Society Symposium Proceedings 555() 197-202
Dou H, Jagadish AC C
Photoluminescence of Si d-doped InGaAs/GaAs heterostructures with double beam excitation
Griffith Asia Quarterly () 516-518
Deenapanray P, Tan H, Jagadish AC C
Impurity-free interdiffusion in GaAs/Al 0.54Ga 0.46As multiple quantum wells capped with PECVD SiO x: Effect of nitrous oxide flow
Griffith Asia Quarterly () 361-364
Fatima S, Jagadish AC C, Lalita J, Svensson B, Hallen A
Hydrogen Interaction with Implantation Induced Point Defects in p-type Silicon
Journal of Applied Physics 85, 5() 2562-2567
Cohen M, Tan H, Jagadish AC C
Intermixing induced resonance shift in GaAs/AlxOy distributed Bragg resonators
Journal of Applied Physics 85() 7964-7966
Li G, Yuan S, Jagadish AC C
Si and C d-doping for device applications
Journal of Crystal Growth 195, 1-Apr() 54-57
Yuan S, Tan H, Jagadish AC C
Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells
Journal of Applied Physics 83, 3() 1305-1311
Yuan S, Jagadish AC C, Tan H, Petravic M
Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures
IEEE Journal on Selected Topics in Quantum Electronics 4, 4() 629-634
Jagadish AC C, Krotkus A
Urbach tail in InP with nanometer metallic precipitates
Physica Status Solidi (A) Applied Research 168, 2() 475-477
Jagadish AC C, Li G
Si and C d-doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlattices
Materials Science and Engineering B 51, 1-Mar() 103-105

Conference paper

Alexander-Webber J, Groschner C, Sagade A, Hofmann S, Tan H, Jagadish AC C, Joyce H
Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering
CLEO: Applications and Technology, CLEO_AT 2017 ()
Li Z, Fu L, Tan H, Jagadish AC C, Tan L, Ma J
GaAs/AlGaAs core-shell ensemble nanowire photodetectors
CLEO: QELS_Fundamental Science, CLEO_QELS 2017 ()
Peng K, Parkinson P, Gao Q, Boland J, Li Z, Wang F, Wenas Y, Davies C, Fu L, Johnston M, Tan H, Jagadish AC C, Gao Q
Broadband single-nanowire photoconductive terahertz detectors
CLEO: Science and Innovations, CLEO_SI 2017 () 2
Baig S, Boland J, Damry D, Tan H, Jagadish AC C, Joyce H, Johnston M
Modulation of terahertz polarization on picosecond timescales using polymer-encapsulated semiconductor nanowires
CLEO: Science and Innovations, CLEO_SI 2017 () 2
Camacho Morales M, Rahmani M, Kruk S, Wang L, Xu L, Miroshnichenko A, Smirnova D, Tan H, Karouta F, Naureen S, Vora K, Solntsev A, Carletti L, De Angelis C, Jagadish AC C, Kivshar Y, Neshev D
Shaping the radiation pattern of second-harmonic generation from AlGaAs nonlinear nanoantennas DUPLICATE ?
Photonics and Fiber Technology ()
Ren F, Xu W, Lu H, Ye J, Tan H, Jagadish AC C
Dynamic control of THz waves through thin-film transistor metamaterials
SPIE Micro+Nano Materials, Devices, and Applications Symposium 2015 ()
Zhong Z, Li Z, Fu L, Gao Q, Li Z, Peng K, Li L, Zhang G, Wang Z, Tan H, Jagadish AC C
InP single nanowire solar cells
Light, Energy and the Environment 2015 ()
Badada B, Shi T, Jackson H, Smith L, Gao Q, Tan H, Jagadish AC C
Photocurrent spectroscopy of single GaAs/AlGaAs core-multishell nanowire devices
Annual Device Research Conference, DRC 2015 () 81-82
Ullah A, Joyce H, Burke A, Wong-Leung J, Wong-Leung J, Tan H, Jagadish AC C, Micolich A
How InAs Crystal Phase affects the Electrical Performance of InAs Nanowire FETs
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) () 283-285
Toe W, Ortega-Piwonka I, Andres-Arroyo A, Gao Q, Tan H, Jagadish AC C, Henry B, Angstmann C, Reece P
Anomalous dynamic behaviour of optically trapped high aspect ratio nanowires
Optical Trapping and Optical Micromanipulation XI () 91641L 6
Peng K, Parkinson P, Fu L, Gao Q, Jiang N, Guo Y, Wang F, Joyce H, Boland J, Johnston M, Tan H, Jagadish AC C
Single GaAs/AlGaAs Nanowire Photoconductive Terahertz Detectors
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) () 221-222
Wagner H, Wickremasighe N, Kaveh M, Ajward M, Wang X, Schmitzer H, Gao Q, Jagadish AC C
Optical properties of Alq3 films and Alq3/plasmonic heterostructures
Light Manipulating Organic Materials and Devices ()
Ren F, Lu H, Tan H, Jagadish AC C
Broad-linewidth and high-efficiency second harmonic generation in cascaded photonic crystals
The 5th International Conference on Metamaterials, Photonic Crystals and Plasmonics META'14 ()
Wang F, Gao Q, Peng K, Guo Y, Li Z, Fu L, Smith L, Tan H, Jagadish AC C
Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) () 272-274
Ye J, Zhen K, Gu S, Wang F, Tan H, Jagadish AC C
Formation of Intermediate Band in ZnTe: O Highly Mismatched Alloy Synthesized by Ion Implantation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) () 259-261
Wenas Y, Mokkapati S, Tan H, Jagadish AC C
Extremely High Short-Circuit Current Density in Vertical Single Nanowire Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) () 77-78
Paiman S, Gao Q, Joyce H, Tan H, Jagadish AC C, Kim Y, Guo Y, Pemasiri K, Montazeri M, Jackson H, Smith L
MOCVD-grown indium phosphide nanowires for optoelectronics
2013 International Conference on Nanoscience and Nanotechnology, NANO-SciTech 2013 832() 201-205
Mokkapati S, Saxena D, Jiang N, Tan H, Jagadish AC C
Plasmonic cavities for increasing the radiative efficiency of GaAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) () 244-245
Gao Q, Fu L, Wang F, Guo Y, Li Z, Peng K, Li L, Li Z, Wenas Y, Mokkapati S, Tan H, Jagadish AC C
Selective area epitaxial growth of InP nanowire array for solar cell applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) () 252-253
Naureen S, Shahid N, Vora K, Lysevych M, Tan H, Jagadish AC C, Karouta F
Top-down approach for fabricating InP nanowires with Ohmic metal contacts
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) () 3-6
Decker M, Kruk S, Staude I, Jagadish AC C, Neshev D, Kivshar Y
Manipulation of Quantum-Dot Emission by Multipolar Magnetic Metamaterials
The 5th International Conference on Metamaterials, Photonic Crystals and Plasmonics META'14 ()
Carrad D, Burke A, Svensson S, Lyttleton R, Joyce H, Tan H, Jagadish AC C, Storm K, Samuelson L, Linke H, Micolich A
Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) () 286-289
Jiang N, Wong-Leung J, Wong-Leung J, Gao Q, Tan H, Jagadish AC C
Sidewall evolution in VLS grown GaAs Nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) () 87-89
Fonseka H, Caroff-Gaonac'h P, Guo Y, Wang F, Wong-Leung J, Wong-Leung J, Tan H, Jagadish AC C
InP-Based Radial Heterostructures Grown on [100] Nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) () 168-170
Narangari P, Naureen S, Wang F, Vora K, Shahid N, Karouta F, Tan H, Jagadish AC C
Fabrication and Photoluminescence Studies of GaN Nanopillars
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) () 133-136
Lysevych M, Tan H, Karouta F, Jagadish AC C
Positioning of the active region in broad-waveguide laser for optimized hole injection
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) () 41-43
Mokkapati S, Saxena D, Jiang N, Gao Q, Tan H, Jagadish AC C
III-V semiconductor nanowire lasers
2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 () 217-218
Mokkapati S, Jiang N, Saxena D, Tan H, Jagadish AC C
High quantum efficiency (Al) GaAs nanowires for optoelectronic devices
2014 Summer Topicals Meeting Series, SUM 2014 () 13-14
Reece P, Wang F, Toe W, Andres-Arroyo A, Gao Q, Tan H, Jagadish AC C
Using Spectroscopic Techniques to Interrogate Trapping Dynamics of Nanoscale Objects
Optical Trapping Applications, OTA 2013 () 1
Pemasiri K, Perera S, Wang Y, Montazeri M, Jackson H, Smith L, Yarrison-Rice J, Gao Q, Tan H, Jagadish AC C
Determining wurtzite band structure using optical spectroscopies on single InP nanowires
International Conference on the Physics of Semiconductors ICPS 2012 () 476-477
Reece P, Wang F, Toe W, Andres-Arroyo A, Gao Q, Tan H, Jagadish AC C
Using Spectroscopic Techniques to Interrogate Trapping Dynamics of Nanoscale Objects
Optical Trapping Applications, OTA 2013 ()
Vora K, Karouta F, Jagadish AC C
Nanostencil Lithography for fabrication of III-V nanostructures
Nanoengineering: Fabrication, Properties, Optics, and Devices X 8816() 88161B-1 - 88161B-7
Pemasiri K, Perera S, Wang Y, Montazeri M, Jackson H, Smith L, Yarrison-Rice J, Gao Q, Tan H, Jagadish AC C
Determining wurtzite band structure using optical spectroscopies on single InP nanowires
International Conference on the Physics of Semiconductors ICPS 2012 () 476-477
Tan H, Jiang N, Saxena D, Lee Y, Mokkapati S, Fu L, Gao Q, Joyce H, Jagadish AC C
III-V nanowires for optoelectronic applications
International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting 58, 7() 93-98
Smith L, Kang J, Gao Q, Tan H, Jagadish AC C
Transient Rayleigh scattering from single semiconductor nanowires
International Conference on the Physics of Semiconductors ICPS 2012 () 425-426
Joyce H, Docherty C, Yong C, Wong-Leung J, Gao Q, Paiman S, Tan H, Jagadish AC C, Lloyd-Hughes J, Herz L, Johnston M
Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy
SPIE Micro+Nano Materials, Devices, and Applications 2013 Conference 8923() 1-6
Gao Q, Jiang N, Joyce H, Paiman S, Wong-Leung J, Wong-Leung J, Lee Y, Fu L, Tan H, Jagadish AC C
Compound semiconductor nanowires for optoelectronic devices
10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 () 1-2
Mokkapati S, Saxena D, Jiang N, Gao Q, Tan H, Jagadish AC C
Multi-colour emission from GaAs core-AlGaAs shell photonic nanowires
2013 26th IEEE Photonics Conference, IPC 2013 () 153-154
Joyce H, Docherty C, Yong C, Wong-Leung J, Gao Q, Paiman S, Tan H, Jagadish AC C, Lloyd-Hughes J, Herz L, Johnston M
Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 () 1-2
Jiang N, Gao Q, Parkinson P, Wong-Leung J, Tan H, Jagadish AC C
High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
2013 26th IEEE Photonics Conference, IPC 2013 () 476-477
Little D, Kuruwita R, Gao Q, Joyce A, Burgess T, Jagadish AC C, Kane D
Nanoparticle Measurement in the Optical Far-Field
Conference on Lasers and Electro-Optics-Int Quantum Electronics Conference CLEO_Europe_IQEC 2013 () 1
Staude I, Maksymov I, Decker M, Miroshnichenko A, Neshev D, Jagadish AC C, Kivshar Y
Tapered nanoantennas for efficient broadband unidirectional emission enhancement
International Congress on Advanced Electromagnetic Materials in Microwaves and Optics 2012 () 743-745
Staude I, Maksymov I, Decker M, Miroshnichenko A, Neshev D, Jagadish AC C, Kivshar Y
Broadband unidirectional Yagi-Uda nanoatennas
Australian Institute of Physics Congress (AIP 2012) () 1
Staude I, Maksymov I, Decker M, Miroshnichenko A, Neshev D, Jagadish AC C, Kivshar Y
Tapered Yagi-Uda nanoantennas for broadband unidirectional emission
Materials Research Society Meeting Fall 2012 ()
Staude I, Decker M, Ventura M, Jagadish AC C, Neshev D, Gu M, Kivshar Y
A novel hybrid fabrication approach for three-dimensional photonic nanostructures
Australian Institute of Physics Congress (AIP 2012) () 1
Sun W, Guo Y, Xu H, Liao Z, Zou J, Gao Q, Tan H, Jagadish AC C
Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 147-148
Sajewicz P, Fu L, Tan H, Vora K, Jagadish AC C
Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 137-138
Parkinson P, Wang H, Gao Q, Tan H, Jagadish AC C
Picosecond carrier lifetime measurements on a single GaAs nanowire
Conference on Lasers and Electro-Optics (CLEO 2012) ()
Parkinson P, Peng K, Jiang N, Gao Q, Tan H, Jagadish AC C
Non-linear direct-write lithography for semiconductor nanowire characterisation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 135-136
Tan H, Jiang N, Lee Y, Saxena D, Parkinson P, Gao Q, Fu L, Jagadish AC C
III-V nanowires for optoelectronic applications
5th International Conference on Computers and Devices for Communication, CODEC 2012 () 1-3
Saxena D, Mokkapati S, Tan H, Jagadish AC C
Designing single GaAs nanowire lasers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 101-102
Smith L, Jackson H, Yarrison-Rice J, Jagadish AC C
Measuring the Energy Landscape in Single Semiconductor Nanowires
WELCOME Scientific Meeting on Hybrid Nanostructures 122, 2() 316-320
Song Y, Zhang P, Tian J, Zhang Z, Tan H, Jagadish AC C
High repetition frequency mode-locked semiconductor disk laser
International Conference on Data Communication Networking, International Conference on e-Business and International Conference on Optical Communication Systems 2012 () 361-364
Wang F, Lee W, Toe W, Gao Q, Tan H, Jagadish AC C, Reece P
PL Mapping and Optimized Optical Trapping of Nanowires SLM beam shaping
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 29-30
Xu H, Guo Y, Liao Z, Zou J, Gao Q, Tan H, Jagadish AC C
Growth of defect-free InAs Nanowires using Pd catalyst
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 31-32
Willems van Beveren L, McCallum J, Tan H, Jagadish AC C
Progress towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 49-50
Ye J, Lim S, Gu S, Tan H, Jagadish AC C, Teo K
Magneto-transport Study on the Two Dimensional Electron Gas in ZnMgO/ZnO Heterostructure Grown by MOVPE
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 201-202
Yuan X, Tan H, Parkinson P, Wong-Leung J, Wong-Leung J, Breuer S, Gao Q, Jagadish AC C
Growth and characterization of GaAx1-xSbx nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 141-142
Montazeri M, Wade A, Fickenscher M, Jackson H, Smith L, Yarrison-Rice J, Gao Q, Tan H, Jagadish AC C
Photomodulated Rayleigh scattering from single semiconductor nanowires
Materials Research Society Fall Meeting 2011 1408() 11-16
Wang H, Parkinson P, Tian J, Saxena D, Mokkapati S, Gao Q, Prasai P, Fu L, Karouta F, Tan H, Jagadish AC C
Optoelectronic properties of GaAs nanowire photodector
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 139-140
Wang F, Toe W, Hartstone A, Ming Lee W, McGloin D, Gao Q, Tan H, Jagadish AC C, Reece P
Mapping optical process in semiconductor nanowires using dynamic optical tweezers
Optical Trapping and Optical Micromanipulation IX 8458() 1-7
Turner S, Mokkapati S, Jolley G, Fu L, Tan H, Jagadish AC C
Dielectric Diffraction Gratings for Light-Trapping in InGaAs-GaAs Quantum Well Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 129-130
Vines L, Neuvonen P, Kuznetsov A, Wong-Leung J, Jagadish AC C, Svensson B
Anomalous diffusion of intrinsic defects in K+ implanted ZnO using Li as tracer
Materials Research Society Fall Meeting 2011 1394() 75-80
Wang F, Lee W, Toe W, Gao Q, Tan H, Jagadish AC C, Reece P
PL Mapping and Optimized Optical Trapping of Nanowires SLM beam shaping
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 29-30
Wang F, Toe W, Hartstone A, Ming Lee W, McGloin D, Gao Q, Tan H, Jagadish AC C, Reece P
Mapping optical process in semiconductor nanowires using dynamic optical tweezers
Optical Trapping and Optical Micromanipulation IX 8458() 1-7
Tollerud J, Richards G, Tan H, Jagadish AC C, Davis J
Demonstration of a stable and flexible coherent multidimensional spectroscopy apparatus to study coherent coupling in asymmetric double quantum wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 151-152
Decker M, Kremers C, Minovich A, Miroshnichenko A, Tan H, Chigrin D, Neshev D, Jagadish AC C, Kivshar Y
Tuning magnetic metamaterials with liquid crystals
Australian Institute of Physics Congress (AIP 2012) () 1
Gao Q, Tan H, Fu L, Parkinson P, Breuer S, Wong-Leung J, Wong-Leung J, Jagadish AC C
InP Nanowires Grown by SA-MOVPE
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 45-46
Fonseka H, Tan H, Kang J, Paiman S, Gao Q, Parkinson P, Jagadish AC C
Growth of InP Nanowires on Silicon Using a Thin Buffer Layer
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 43-44
Guo Y, Zou J, Burgess T, Gao Q, Tan H, Jagadish AC C
Shell formation in InGaAs Nanowires Driven by Lattice Latching and Polarity Effect
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 51-52
Hall C, Richards G, Tollerud J, Tan H, Jagadish AC C, Koike K, Sasa S, Inoue M, Yano M, Davis J
Diffusion and Population Dynamics of Excitons in c-axis grown ZnO Quantum Wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 59-60
Mokkapati S, Saxena D, Gao Q, Tan H, Jagadish AC C
Effect of plasmonic nanoparticles on the quantum efficiency of lll-V semiconductor nanorwire emitters
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 47-48
Decker M, Staude I, Shishkin I, Samusev K, Parkinson P, Sreenivasan V, Minovich A, Miroshnichenko A, Zvyagin A, Jagadish AC C, Neshev D, Kivshar Y
Photoluminescence enhancement in magnetic quantum-dot metamaterials
Australian Institute of Physics Congress (AIP 2012) () 1
Decker M, Minovich A, Kremers C, Miroshnichenko A, Tan H, Chigrin D, Neshev D, Jagadish AC C, Kivshar Y
Liquid crystal infiltrated optical magnetic metamaterials
International Congress on Advanced Electromagnetic Materials in Microwaves and Optics 2012 () 813-815
Ameruddin A, Tan H, Fonseka H, Gao Q, Wong-Leung J, Wong-Leung J, Parkinson P, Breuer S, Jagadish AC C
Influence of growth temperature and V/III ratio on Au-assisted InxGa1-xAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 37-38
Breuer S, Karouta F, Tan H, Jagadish AC C
MOCVD growth of GaAs nanowires using Ga droplets
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 39-40
Burgess T, Du S, Gault B, Gao Q, Tan H, Zheng R, Jagadish AC C
Quantification of the zinc dopant concentration in GaAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 41-42
Chan K, Ye J, Parkinson P, Monakhov E, Johansen K, Vines L, Svensson B, Jagadish AC C, Wong-Leung J, Wong-Leung J
Structural and Optical properties of H implanted ZnO
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 219-220
Jiang N, Parkinson P, Gao Q, Wong-Leung J, Wong-Leung J, Breuer S, Tan H, Jagadish AC C
Improvement of Minority Carrier Lifetime in GaAs/AlxGal1-xAs Core-Shell Nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 33-34
Helgert C, Decker M, Kruk S, Pertsch T, Jagadish AC C, Neshev D, Kivshar Y
Magnetic quasi-crystal metamaterials
Australian Institute of Physics Congress (AIP 2012) () 1
Maksymov I, Staude I, Miroshnichenko A, Decker M, Tan H, Neshev D, Jagadish AC C, Kivshar Y
Arrayed nanoantennas for efficient broadband unidirectional emission enhancement
Conference on Lasers and Electro-Optics (CLEO 2012) () 1-2
Kruk S, Helgert C, Decker M, Staude I, Etrich C, Menzel C, Rockstuhl C, Jagadish AC C, Pertsch T, Neshev D, Kivshar Y
Quasicrystal metamaterials: A route to optical isotropy
2012 Asia Communications and Photonics Conference, ACP 2012 () 1-2
Minovich A, Farnell J, Neshev D, McKerracher I, Karouta F, Tian J, Powell D, Shadrivov I, Tan H, Jagadish AC C, Kivshar Y
Nonlinear fishnet metamaterials based on liquid crystal infiltration
Conference on Lasers and Electro-Optics (CLEO 2012) () 1-2
Minovich A, Farnell J, Neshev D, McKerracher I, Karouta F, Tian J, Powell D, Shadrivov I, Tan H, Jagadish AC C, Kivshar Y
Nonlinear effects in liquid-crystal-infiltrated fishnet metamaterials
International Congress on Advanced Electromagnetic Materials in Microwaves and Optics 2012 () 828-830
Mokkapati S, Lu H, Turner S, Fu L, Tan H, Jagadish AC C
Plasmonics for III-V semiconductor solar cells
IEEE Photonics Conference (IPC 2012) () 56-57
Lysevych M, Tan H, Karouta F, Fu L, Jagadish AC C
Reduction of Gain-Saturation in Merged Beam Lasers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 189-190
Lu H, Fu L, Jolley G, Tan H, Jagadish AC C
Improved performance of InGaAs/GaAs Quantum Dot Solar Cells using Si-modulation doping
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 127-128
Kruk S, Helgert C, Decker M, Staude I, Etrich C, Menzel C, Rockstuhl C, Jagadish AC C, Pertsch T, Neshev D, Kivshar Y
Quasicrystalline metamaterials
Frontiers in Optics 2012 () 1-2
Kruk S, Minovich A, Farnell J, McKerracher I, Karouta F, Tian J, Powell D, Shadrivov I, Tan H, Jagadish AC C, Neshev D, Kivshar Y
Tunable and nonlinear fishnet metamaterials based on liquid crystal infiltration
Metamaterials: Fundamentals and Applications V 8455() 84552O1-10
Lee Y, Li Z, Fu L, Parkinson P, Vora K, Tan H, Jagadish AC C
Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 131-132
Li Z, Hattori H, Karouta F, Tian J, Parkinson P, Fu L, Tan H, Jagadish AC C
Coupling of light from microdisk lasters to nano-antennas with nano-tapers
IEEE Photonics Conference (IPC 2012) () 889-890
Lei W, Parkinson P, Tan H, Jagadish AC C
Drop epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) () 53-54
Jolley G, Fu L, Tan H, Jagadish AC C
Growth and confinement effects in III-V semiconductor nanostructures
Microoptics Conference (MOC 2011) ()
Jolley G, Lu H, Fu L, Tan H, Rao Tatavarti S, Jagadish AC C
The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties
IEEE Photovoltaic Specialists Conference PVSC 2011 () 513-516
Jackson H, Perera S, Pemasiri K, Smith L, Yarrison-Rice J, Kang J, Gao Q, Tan H, Jagadish AC C, Guo Y, Zou J
Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy
International Conference on the Physics of Semiconductors 2010 1399() 481-482
Wang F, Paiman S, Gao Q, Tan H, Jagadish AC C, Reece P
Two-photon luminescence study of optically trapped InP semiconductor nanowires
2011 International Quantum Electronics Conference, IQEC 2011 and Conference on Lasers and Electro-Optics, CLEO Pacific Rim 2011 () 221-223
Reece P, Toe W, Wang F, Paiman S, Gao Q, Tan H, Jagadish AC C
High speed synchronous position sensing and acousto-optic switching for optical tweezers applications
Optical Trapping Applications, OTA 2011 () Paper Code 102735
Jackson H, Perera S, Pemasiri K, Smith L, Yarrison-Rice J, Kang J, Gao Q, Tan H, Jagadish AC C, Guo Y, Zou J
Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy
International Conference on the Physics of Semiconductors 2010 1399() 481-482
Gao Q, Tan H, Jackson H, Smith L, Yarrison-Rice J, Zou J, Johnson M, Jagadish AC C
Growth and characterization of III-V compound semiconductor nanowires
Opto-Electronics and Communications Conference (OECC 2011) () 366-367
Gao Q, Joyce H, Paiman S, Kang J, Tan H, Jackson H, Smith L, Yarrison-Rice J, Zou J, Jagadish AC C
Compound Semiconductor Nanowires for Optoelectronic Device Applications
ICO International Conference of Information Photomics () 1-2
Fu L, Lu H, Mokkapati S, Jolley G, Tan H, Jagadish AC C
Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells
Photonics Society 2011 annual meeting () 387-388
Gao Q, Kang J, Tan H, Jackson H, Smith L, Yarrison-Rice J, Zou J, Jagadish AC C
Growth and characterization of compound semiconductor nanowires on Si
IEEE Conference on Nanotechnology (IEEE-NANO 2011) () 44-47
Paiman S, Gao Q, Joyce H, Tan H, Jagadish AC C, Kim Y, Guo Y, Zou J
Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 37-38
Paiman S, Gao Q, Joyce H, Tan H, Jagadish AC C, Kim Y, Guo Y, Zou J
Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 37-38
Parkinson P, Joyce H, Xu X, Gao Q, Tan H, Jagadish AC C, Herz L, Johnston M
Characterisation of nanostructures via terahertz spectroscopy
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 23-24
Minovich A, Farnell J, Neshev D, Powell D, Shadrivov I, McKerracher I, Tan H, Jagadish AC C, Kivshar Y
Infrared metamaterials tuned by liquid crystals
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 27-28
Lu H, Fu L, Jolley G, Tan H, Rao Tatavarti S, Jagadish AC C
Temperature Dependence of Dark Current Properties of InGaAs/GaAs Quantum Dot Solar Cells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 127-128
Ramesh V, Gao Q, Tan H, Paiman S, Guo Y, Zou J, Jagadish AC C
InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 83-84
Lu J, Ren Q, Tan H, Wu S, An Z, Zhang S, Zhu Y, Chen Z, Jagadish AC C, Shen X
Selective enhancement of photon emission in a quantum dot coupling with micropillar cavity
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 71-72
McKerracher I, Wong-Leung J, Jolley G, Fu L, Tan H, Jagadish AC C
Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 2
Waddington D, Burke A, Fricke S, Tan H, Jagadish AC C, Hamilton A, Trunov K, Reuter D, Wieck A, Micolich A
Can insulating the gates lead us to stable modulation-doped hole quantum devices?
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 199-200
Williams M, Burke A, Joyce H, Micolich A, Tan H, Jagadish AC C
A comparative study of transistors based on wurtzite and zincblende InAs nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 203-204
Xu H, Wang Y, Guo Y, Zou J, Gao Q, Tan H, Jagadish AC C
Growth of GaAs nanowires using different Au catalysts
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 35-36
Xu H, Wang Y, Guo Y, Zou J, Gao Q, Tan H, Jagadish AC C
Growth of GaAs nanowires using different Au catalysts
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 35-36
Wang F, Toe W, Paiman S, Gao Q, Gal M, Tan H, Jagadish AC C, Reece P
Photoluminescence study of optically trapped InP semiconductor nanowires
Optical Trapping and Optical Micromanipulation VII 7762() 1-6
Wang F, Toe W, Paiman S, Gao Q, Gal M, Tan H, Jagadish AC C, Reece P
Photoluminescence study of optically trapped InP semiconductor nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 211-212
Vora K, Belay K, Pyke D, Karouta F, Jagadish AC C
Correlating properties of PECVD SiNx layers to deposition parameters
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 197-198
Liu D, Hattori H, Fu L, Tan H, Jagadish AC C
Increasing the coupling efficiency of a microdisk laser to waveguides by using spiral structures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 69-70
Ramesh V, Gao Q, Tan H, Paiman S, Guo Y, Zou J, Jagadish AC C
InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 83-84
Majid A, Fu L, Jagadish AC C, Tan H
MOCVD grown quantum dot-in-a-well solar cells
11th International Symposium on Advanced Materials, ISAM-2009 442() 398-403
Hall C, Dao L, Koike K, Sasa S, Tan H, Inoue M, Yano M, Jagadish AC C, Davis J
Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 45-46
Hall C, Dao L, Koike K, Sasa S, Tan H, Inoue M, Yano M, Jagadish AC C, Davis J
Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells
International Conference on Ultrafast Phenomena, UP 2010 () 1-2
Hall C, Dao L, Tan H, Jagadish AC C, Davis J
Observation of spatially separated coherent coupling near the LO phonon resonance within asymmetric double quantum wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 115-116
Liu D, Hattori H, Fu L, Tan H, Jagadish AC C
Analysis of multi-wavelength photonic crystal single-defect laser arrays
23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 () 500-501
Guo Y, Zou J, Joyce H, Gao Q, Tan H, Jagadish AC C
Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 51-52
Dong H, Chen Z, Sun L, Lu J, Xie W, Tan H, Jagadish AC C, Shen X
Synthesis of indium oxide hexagonal microcavity and identification of its whispering gallery modes
14th International Conference on II-VI Compounds, II-VI 2009 7, 6() 1672-1674
Du S, Fu L, Tan H, Jagadish AC C
Study of intermixing mechanism in AlInGaAs/InGaAs quantum well
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 47-48
Fu L, Jolley G, Lu H, Majid A, Tan H, Jagadish AC C
Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 716-717
Headley C, Fu L, Parkinson P, Xu X, Lloyd-Hughes J, Jagadish AC C, Johnston M
Improved performance of GaAs-based terahertz emitters
35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 ()
Guo Y, Zou J, Joyce H, Gao Q, Tan H, Jagadish AC C
Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 51-52
Li Z, Hattori H, Fu L, Tan H, Jagadish AC C
High efficiency coupling of light from photonic wire lasers into nano-antennas
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 67-68
Li Z, Hattori H, Fu L, Tan H, Jagadish AC C
High efficiency coupling of light from photonic wire lasers into nano-antennas
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 67-68
Kang J, Gao Q, Joyce H, Tan H, Jagadish AC C, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Improvement of Morphology, Structure, and Optical Properties of GaAs Nanowires Grown on Si substrates
IEEE Conference on Nanotechnology (IEEE-NANO 2010) () 470-473
Lei W, Tan H, Jagadish AC C
Mid-infrared InAsSb quantum dots with high emission efficiency
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 65-66
Lei W, Tan H, Jagadish AC C
Shape control and emission wavelength extension of InP-based InAsSb nanostructures
2009 MRS Fall Meeting 1208() 178-183
Kang J, Gao Q, Joyce H, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J, Tan H, Jagadish AC C
Structural and Optical Characterization of Vertical GaAs / GaP Core-Shell Nanowires Grown on Si Substrates
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) () 57-58
Kang J, Gao Q, Joyce H, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J, Tan H, Jagadish AC C
Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010) na() 57-58
Kang J, Gao Q, Joyce H, Tan H, Jagadish AC C, Kim Y, Guo Y, Xu H, Zou J, Fickenscher M, Smith L, Jackson H, Yarrison-Rice J
Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates
IEEE Conference on Nanotechnology (IEEE-NANO 2010) () 470-473
Paiman S, Joyce H, Kang J, Gao Q, Tan H, Kim Y, Zhang X, Zou J, Jagadish AC C
III-V compound semiconductor nanowires
2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 () 155-156
Song Y, Zhang P, Tian J, Zhang X, Jagadish AC C, Tan H
Semiconductor disk laser with a diamond heatspreader
CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics () 1-2
Paiman S, Gao Q, Tan H, Jagadish AC C, Pemasiri K, Montazeri M, Jackson H, Smith L, Yarrison-Rice J, Zhang X, Zou J
Effect of the crystal structure on the optical properties of InP nanowires
2009 IEEE LEOS Annual Meeting Conference, LEOS '09 () 145-146
Gao Q, Joyce H, Paiman S, Kang J, Tan H, Kim Y, Smith L, Jackson H, Yarrison-Rice J, Zhang X, Zou J, Jagadish AC C
Nanowires for optoelectronic device applications
15th International Semiconducting and Insulating Materials Conference, SIMC-XV 6, 12() 2678-2682
Minovich A, Neshev D, Powell D, Shadrivov I, Lapin M, McKerracher I, Hattori H, Tan H, Jagadish AC C, Kivshar Y
Tilted response of fishnet photonic metamaterials at near-infrared wavelengths
Australasian Conference on Optics, Lasers and Spectroscopy and the Australian Conference on Optical Fibre Technology in association with the International Workshop on Dissipative Solitons (ACOLS ACOFT 2009) () 2
Gao Q, Joyce H, Paiman S, Tan H, Kim Y, Smith L, Jackson H, Yarrison-Rice J, Zhang X, Zou J, Jagadish AC C
Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
14th OptoElectronics and Communications Conference (OECC 2009) ()
Joyce H, Paiman S, Gao Q, Tan H, Kim Y, Smith L, Jackson H, Yarrison-Rice J, Zhang X, Zou J, Jagadish AC C
III-V compound semiconductor nanowires
2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 () 59-60
McKerracher I, Hattori H, Fu L, Tan H, Jagadish AC C
Photonic crystal-enhanced quantum dot infrared photodetectors
Nanoengineering: Fabrication, Properties, Optics, and Devices 2008 7039() 70390S/1-11
McKerracher I, Fu L, Tan H, Jagadish AC C
Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering
Nanoengineering: Fabrication, Properties, Optics, and Devices 2008 7039() 70390U/1-10
Zou J, Paladugu M, Guo Y, Zhang X, Auchterlonie G, Joyce H, Gao Q, Tan H, Jagadish AC C, Kim Y
Growth behavior of epitaxial semiconductor axial nanowire heterostructures
IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008) () 71-74
Minovich A, Hattori H, McKerracher I, Tan H, Neshev D, Jagadish AC C, Kivshar Y
Light transmission through nanohole arrays of periodic and quasi-periodic geometries
Optical Fabrication and Testing, OFT 2008 ()
Jackson H, Perera S, Fickenscher M, Smith L, Yarrison-Rice J, Joyce H, Gao Q, Tan H, Jagadish AC C, Zhang X, Zou J
Optical properties of single InP and GaAs nanowire heterostructures
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2008) () 427-428
Barik S, Fu L, Tan H, Jagadish AC C
Role of Stress on Impurity Free Disordering of Quantum Dots
IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008) () 221-224
Joyce H, Gao Q, Kim Y, Tan H, Jagadish AC C, Zhang X, Guo Y, Zou J, Fickenscher M, Perera S, Hoang T, Smith L, Jackson H, Yarrison-Rice J
Growth, Structural and Optical Properties of High Quality GaAs Nanowires for Optoelectronics
IEEE Conference on Nanotechnology (IEEE-NANO 2008) () 59-62
Joyce H, Gao Q, Kim Y, Tan H, Jagadish AC C, Zhang X, Guo Y, Zou J, Fickenscher M, Perera S, Hoang T, Smith L, Jackson H, Yarrison-Rice J
Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics
2008 8th IEEE Conference on Nanotechnology, IEEE-NANO () 59-62
Joyce H, Gao Q, Kim Y, Tan H, Jagadish AC C
Growth, structural and optical properties of GaAs, InGaAs and AIGaAs nanowires and nanowire heterostructures
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2007) () 407-408
Lloyd-Hughes J, Castro-Camus E, Fraser M, Tan H, Jagadish AC C, Johnston M
Terahertz Emission and Lifetime Measurements of Ion-implanted Semiconductors: Experiment and Simulation
Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science/Conference on Photonic Applications, Systems and Technologies (CLEO/QELS 2006) () JTuD18-1-2
Mokkapati S, Tan H, Jagadish AC C, McBean K, Phillips M
Integration of Quantum Dot devices by Selective Area Epitaxy
International Conference on Nanoscience and Nanotechnology (ICONN 2006) () 442-445
Paladugu M, Zou J, Wang H, Auchterlonie G, Kim Y, Joyce H, Gao Q, Tan H, Jagadish AC C
Understanding the Kink Formation in GaAs/InAs Heterostructural Nanowires
International Conference on Nanoscience and Nanotechnology (ICONN 2006) () 600-603
Sears K, Tan H, Buda M, Wong-Leung J, Jagadish AC C
Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers
International Conference on Nanoscience and Nanotechnology (ICONN 2006) () 505-508
Zou J, Wang H, Auchterlonie G, Paladugu M, Gao Y, Kim Y, Joyce H, Gao Q, Tan H, Jagadish AC C
Growth Mechanism of Truncated Triangular GaAs Nanowires
International Conference on Nanoscience and Nanotechnology (ICONN 2006) () 604-605
Joyce H, Kim Y, Gao Q, Tan H, Jagadish AC C
Growth, Structural and Optical Properties of GaAs/AlGaAs Core/Shell Nanowires with and without Quantum Well Shells
International Conference on Nanoscience and Nanotechnology (ICONN 2006) () 450-453
Jolley G, Fu L, Tan H, Jagadish AC C, Vukmirovic N, Harrison P
Quantum Dots-in-a-Well Infrared Photodetectors Grown by MOCVD
International Conference on Nanoscience and Nanotechnology (ICONN 2006) () 419-422
Barik S, Tan H, Jagadish AC C
Growth of Stacked InAs/InP Quantum Dot Structures
International Conference on Nanoscience and Nanotechnology (ICONN 2006) () 454-457
Castro-Camus E, Lloyd-Hughes J, Fraser M, Tan H, Jagadish AC C, Johnston M
Polarization Sensitive Terahertz Time Domain Spectroscopy
Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science/Conference on Photonic Applications, Systems and Technologies (CLEO/QELS 2006) () CMS4-1-2
Fu L, McKerracher I, Tan H, Jagadish AC C
Thermal Annealing Study on InGaAs/GaAs Quantum Dot Infrared Photodetectors
International Conference on Nanoscience and Nanotechnology (ICONN 2006) () 493-496
Gao Q, Buda M, Tan H, Jagadish AC C
InGaAsN Quantum Dots for Long Wavelength Lasers
International Conference on Nanoscience and Nanotechnology (ICONN 2006) () 482-485
Mokkapati S, McGowan P, Tan H, Jagadish AC C, McBean K, Phillips M
Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) 4() 273-275
McGowan P, Lowrie-Nunes Z, Buda M, Tan H, Jagadish AC C
Characterisation of InGaAs/GaAs Quantum Dot Lasers Grown by Metal-Organic Vapour Phase Epitaxy
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) () 277-279
Mokkapati S, Tan H, Jagadish AC C
Integration of an InGaAs Quantum-Dot Laser with a Passive Waveguide using Selective-Area MOCVD
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005() 915-916
Sears K, Wong-Leung J, Buda M, Tan H, Jagadish AC C
Growth and Characterisation of InAs/GaAs Quantum Dots grown by MOCVD
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) () 1-4
Sears K, Mokkapati S, Buda M, McGowan P, Tan H, Jagadish AC C
Quantum Dot Lasers and Optoelectronic Device Integration
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005() 606-608
Sears K, Buda M, Tan H, Jagadish AC C
The Impact of AlGaAs Cladding Layers Grown at Low Temperature on the Performance of MOCVD based in InAs/GaAs Quantum Dot Laser Diodes
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005() 911-912
Kim Y, Joyce H, Gao Q, Tan H, Jagadish AC C
Growth of GaAs/InAs Vertical Nanowires on GaAs (111)B by Metalorganic Chemical Vapor Deposition
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005() 455-456
Coleman V, Tan H, Jagadish AC C, Kucheyev S, Zou J, Phillips M
Towards p-type Doping of ZnO by Ion Implantation
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 829() 847-848
Hoskens R, van de Roer T, Smalbrugge E, Kwaspen J, Tolstikhin V, Tan H, Jagadish AC C, Acket G
Hot Electron Injection Laser controlled carrier-heating induced gain switching
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) () 397-400
Fu L, Kuffner P, McKerracher I, Tan H, Jagadish AC C
Rapid Thermal Annealing Study of InGaAs/GaAs Quantum Dot Infrared Photodetectors grown by Metal-Organic Chemical Vapour Deposition
Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005) 2005() 228-229
Barik S, Tan H, Jagadish AC C
Role of Thin GaAs Interlayer on InAs Quantum Dots Grown on InGaAsP/InP (100) by Metalorganic Chemical Vapor Deposition
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) () 331-334
Gareso P, Tan H, Wong-Leung J, Jagadish AC C, Dao L
Proton Irradiation Induced Intermixing in InxGa1_xAs/InP Quantum Wells
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) () 93-96
Gao Q, Fu L, McGowan P, Mokkapati S, Buda M, Tan H, Jagadish AC C
Quantum Dot Optoelectronic Devices
Microoptics Conference (MOC 2005) () J5-1-4
Gao Q, Buda M, Tan H, Jagadish AC C
Comparison of Photocurrent Spectra of InGaAsN QD and InGaAs QW Laser Devices
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) () 9-12
Deenapanray P, Krispin M, Meyer W, Tan H, Jagadish AC C, Auret F
Defect Engineering and Atomic Relocation Processes in Impurity-Free Disordered GaAs and AIGaAs
Materials Research Society Meeting 2003 799() 1
Lay M, McCallum J, De Medeiros Azevedo G, Deenapanray P, Jagadish AC C
A Deep Level Transient Spectroscopy Study of Vacancy-related Defect Profiles in Channeled Ion Implanted Silicon
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) () 437-440
McGowan P, Tan H, Jagadish AC C
Growth of InGaAs Quantum Dots by Metal Organic Chemical Vapour Deposition
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) () 307-310
Williams J, Elliman R, Tan H, McGowan P, Wong-Leung J, Jagadish AC C
Production and Processing of Semiconductor Nanocrystals and Nanostructures for Photonic Applications
National Conference and Exhibition on Nanotechnology 2003 () 74-80
Gao Q, Tan H, Jagadish AC C, Sun B, Gal M, Ouyang L, Zou J
Growth and Characterization of GaAsN Bulk Layer and (InGaAsN Quantum-well Structures
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) () 247-250
Sun B, Gal M, Gao Q, Tan H, Jagadish AC C
Properties of Radiative Recombination in GaAsN Epilayers
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) () 483-486
McGowan P, Tan H, Reece P, Gal M, Jagadish AC C
Interdiffusion in InGaAs Quantum Dots by Ion Implantation
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) () 515-518
Coleman V, Deenapanray P, Tan H, Jagadish AC C
Atomic Relocation of Fast Diffusers in Impurity-free Disordered P-type GaAs
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) () 495-498
Fu L, McGowan P, Tan H, Jagadish AC C, Reece P, Gal M
Suppression of Interdiffusion in In0.5Ga0.5As/GaAs Quantum Dots
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) () 503-506
Buda M, Tan H, Fu L, Josyula L, Jagadish AC C
Improvement of Kink-free Operation in InGaAs/GaAs/AlGaAs High Power, Ridge Waveguide Laser Diodes
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) () 25-28
Buda M, Jagadish AC C
Computation of the Modal Reflectivity for a Partially Etched Mirror: Application for Integration of a Laser Diode and a Waveguide
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) () 137-140
Carmody C, Tan H, Jagadish AC C, Zou J, Dao L, Gal M
Structural, Electrical and Optical Properties of MEV As+ Ion Implanted InP
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) () 487-490
Carmody C, Tan H, Jagadish AC C
Evolution of InGaAs/InP Quantum Well Intermixing as a Function of Cap Layer
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) () 491-494
Vyvenko O, Sachdeva R, Istratov A, Armitage R, Weber E, Deenapanray P, Jagadish AC C, Gao Y, Huff H
Study of Diffusivity and Electrical Properties of Zr and Hf in Silicon
Semiconductor Silicon 2002 () 440-451
Buda M, Fu L, Hay J, Deenapanray P, Tan H, Jagadish AC C, Reece P, Gal M
Impurity Free Intermixing for Optoelectronic Device Integration
Integrated Optoelectronics () 89-105
Kucheyev S, Williams J, Zou J, Jagadish AC C, Bradby J, Li G
Ion Beam Damage Processes in GaN
III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) () 150-160
Kucheyev S, Bradby J, Williams J, Swain M, Toth M, Phillips M, Jagadish AC C
Mechanical Properties of As-Grown and Ion-Beam-Modified GaN Films
Materials Research Society Meeting Fall 2000 () Q5.5.1-Q5.5.6
Toth M, Phillips M, Kucheyev S, Williams J, Jagadish AC C, Li G
Charge Contrast in SE Images Obtained Using the ESEM
Institute of Physics Conference No 165 (2000) () 275-276

Conference written presentation

Gao Q, Fu L, Li L, Vora K, Li Z, Wang F, Li Z, Wenas Y, Mokkapati S, Karouta F, Tan H, Jagadish AC C
Direct Characterization of Axial p-n Junctions for InP Nanowire Array Solar Cells Using Electron Beam-Induced Current
Light, Energy and the Environment 2015 ()
Jackson H, Smith L, Jagadish AC C
Recent advances in semiconductor nanowire heterostructures
Symposium on State-of-the-Art Program on Compound Semiconductors 56, SOTAPOCS 2014 - 2014 ECS and SMEQ Joint International Meeting () 1-5
Neshev D, Decker M, Kruk S, Staude I, Shishkin I, Samusev K, Parkinson P, Sreenivasan V, Minovich A, Miroshnichenko A, Zvyagin A, Jagadish AC C, Kivshar Y
Control of quantum-dot emission in magnetic metamaterials
7th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics (Metamaterials 2013) ()
Miroshnichenko A, Maksymov I, Staude I, Decker M, Neshev D, Jagadish AC C, Kivshar Y
Tapered Broadband Nanoantennas: Design, fabrication, characterization and practical applications
The 6th International Conference on Surface Plasmon Photonics (SPP6) ()

Journal Editor

Jagadish AC C, Fontcuberta i Morral A
Special issue on Nanowires Preface
Journal of Physics D: Applied Physics 47, 39()
Jagadish AC C, Geelhaar L, Gradecak S
Semiconductor Nanowires
Physica Status Solidi: Rapid Research Letters 7, 10() 683-684
Fu L, Tan H, Jagadish AC C
Nanostructured photovoltaics PREFACE
Journal of Physics D: Applied Physics 46, 2() 1
Dieny B, Jagadish AC C
Emerging non-volatile memories: magnetic and resistive technologies
Journal of Physics D: Applied Physics 46, 7()
Jagadish AC C
Nanowires
Semiconductor Science and Technology 25, 2()

Journal short contribution (non refereed)

Jagadish AC C, Reece P
Semiconductor Nanostructure Optoelectronics
Materials Science and Engineering B 177, 10() 695-695
Jagadish AC C, Dick K, LaPierre R, MOTOHISA J
Introduction to the issue on nanowires
IEEE Journal on Selected Topics in Quantum Electronics 17, 4() 763-765

Scopus import

Jagadish AC C, Fu L
InGaP/GaAs negative differential resistance heterojunction bipolar transistor with a new structure
Scopus Journal Not Found - Do Not Edit this Journal 26, 9() 1783-1788
Lederer M, Kolev V, Luther-Davies B, Tan H, Jagadish AC C
Passively mode-locked, self-frequency doubled, diode-pumped Yb:YAl3(BO3)4 laser
Scopus Journal Not Found - Do Not Edit this Journal 71() 158-160
Dou H, Tan H, Fu L, Jagadish AC C
Performance comparison of GaAs/AlGaAs quantum well infrared photodetectors grown by MOCVD and MBE
Scopus Journal Not Found - Do Not Edit this Journal 21, 5() 441-444
Dou H, Fu L, Jagadish AC C, Tan H
Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector
Scopus Journal Not Found - Do Not Edit this Journal 19, 1() 25-28
Fu L, Tan H, Jagadish AC C
Application of high energy implantation in tuning the detection wavelength of quantum well infrared photodetectors
Scopus Journal Not Found - Do Not Edit this Journal 1() 88-89
Dou H, Jagadish AC C
Photoluminescence of InGaAs/GaAs with double lights
Scopus Journal Not Found - Do Not Edit this Journal 20, 8() 656-661
Dou H, Jagadish AC C
Photoluminescence of selectively Si d-doped In0.2Ga0.8As heterostructure at 77K
Scopus Journal Not Found - Do Not Edit this Journal 20, 7() 573-577
Dou H, Jagadish AC C
Effect of anodization of photoluminescence of GaAs/AlGaAs quantum wires
Scopus Journal Not Found - Do Not Edit this Journal 19, 1() 72-75

Listing does not show publications before 2000

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