Departmental Seminar

In(Ga)As(P)/InP Based Quantum Well Nanowire Growth and Device Applications

Mr Fanlu Zhang

Owing to their nanoscale size and unique one-dimensional geometry, III-V compound semiconductor nanowires have shown advantages of small footprints, large aspect ratio and effective strain relaxation for epitaxy growth on lattice mismatched substrate, and hence being considered as potential building blocks for next-generation nanoscale optoelectronic integrated circuits. In particular, for optoelectronic device applications such as lasers1 or light emitting diodes (LEDs)2, In(Ga)As(P)/InP based quantum well (QW) nanowires have attracted much interest due to the quantum confinement effect and tunable/suitable bandgap for telecommunication windows.

A few groups3-5 have reported the growth of In(Ga)As(P)/InP quantum well (QW) embedded in nanowires with further demonstration of nanowire array LED devices. It has been found that QW nanowire growth is highly sensitive to the material growth conditions leading to complicated NW morphology, crystal structures and thus optical properties. To date, there is still lack of in-depth knowledge on the QW nanowire growth to achieve controlled morphology and crystal structure. In this work, we systematically investigated the growth of In(Ga)As(P)/InP based QW nanowires and demonstrated nanowire array-based high-performance near-infrared LEDs and photodetectors.

In this talk, we will firstly present controlled growth of wurtzite and zincblende InP nanowires with different facets on InP(111)A substrates using selective-area metalorganic vapour phase epitaxy. We show that InAsP/InP single QW nanowires can be grown with different morphologies and thus different QW profiles by carefully choosing the growth parameters. Based on the understanding of single QW nanowire growth, highly uniform In(Ga)As(P)/InP QW nanowires with up to 40 QWs have been achieved.

Based on our optimised QW growth conditions, we fabricated InGaAs/InP single QW nanowire array LEDs with electroluminescence at around 1.3 and 1.55 µm, which are desirable for on-chip telecommunications and LiFi applications. Finally, we fabricated a 40-QW InGaAs/InP n-i-n nanowire detector which exhibits broadband photoresponse close to 1.55 µm as a near-infrared photodetector, which will be further optimised and explored for mid-wavelength infrared photodetection based on intersubband transitions within the QWs. 

1. Schuster, F., Kapraun, J., Malheiros-Silveira, G. N., Deshpande, S. & Chang-Hasnain, C. J. Site-Controlled Growth of Monolithic InGaAs/InP Quantum Well Nanopillar Lasers on Silicon. Nano Lett. 17, 2697-2702, doi:10.1021/acs.nanolett.7b00607 (2017).

2. Yang, I. et al. Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes. Nano Energy 71, 104576, doi: (2020).

3. Yang, I. et al. Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy. ACS Nano 12, 10374-10382, doi:10.1021/acsnano.8b05771 (2018).

4. Zhang, G. et al. Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature. Science Advances 5, eaat8896, doi:10.1126/sciadv.aat8896 (2019).

5. Deshpande, S. et al. Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths. ACS Photonics 4, 695-702, doi:10.1021/acsphotonics.7b00065 (2017).

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