Miss Qian Gao is a past member of RSPE. Contact details and information may no longer be correct.

Miss Qian Gao

Position PhD Student
Department Department of Electronic Materials Engineering
Office phone (02) 612 51593
Email
Office Cockcroft 4 48

Publications

Journal article

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Shape Engineering of InP Nanostructures by Selective Area Epitaxy
ACS Nano 13, 6() 7261-7269
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Vertically Emitting Indium Phosphide Nanowire Lasers
Nano Letters 18, 6() 3414-3420
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Radial Growth Evolution of InGaAs/InP Multi Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy
ACS Nano 12, 10() 10374-10382
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Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance
Progress in Natural Science: Materials International 28, 2() 178-182
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Distinguishing cap and core contributions to the photoconductive terahertz response of single GaAs based core–shell–cap nanowire detectors
Lithuanian Journal of Physics 58, 1() 15-23
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Single n+-i-n+ InP Nanowires for Highly Sensitive Terahertz Detection
Nanotechnology 28, 12() 9
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Engineering Highly Interconnected Neuronal Networks on Nanowire Scaffolds
Nano Letters 17, 6() 3369-3375
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Nonconservative dynamics of optically trapped high-aspect-ratio nanowires
Physical Review E 93, 2() 1-7
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Long-Lived Hot Carriers in III-V Nanowires
Nano Letters 16, 5() 3085-3093
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Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating
Nano Energy 28, -() 106-114
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Simultaneous Selective-Area and Vapor?Liquid?Solid Growth of InP Nanowire Arrays
Nano Letters 16, 7() 4361-4367
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Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors
Nano Letters 16, 8() 4925-4931
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Transfer Printing of Semiconductor Nanowires with Lasing Emission for Controllable Nanophotonic Device Fabrication
ACS Nano 10, 4() 3951-3958
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Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping
Nano Letters 15, 5() 3017-3023
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Mode Profiling of Semiconductor Nanowire Lasers
Nano Letters 15, 8() 5342-5348
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Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Nano Letters 14, 9() 5206-5211

(16 publications)

Conference paper

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Room temperature GaAsSb array photodetectors
1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018 ?, ?() 143-145
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Broadband single-nanowire photoconductive terahertz detectors
CLEO: Science and Innovations, CLEO_SI 2017 ?, ?() 2
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InP single nanowire solar cells
Light, Energy and the Environment 2015 ?, ?()
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Selective area epitaxial growth of InP nanowire array for solar cell applications
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 252-253
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Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014) ?, ?() 272-274
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InP Nanowires Grown by SA-MOVPE
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) ?, ?() 45-46

(6 publications)

Conference written presentation

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Direct Characterization of Axial p-n Junctions for InP Nanowire Array Solar Cells Using Electron Beam-Induced Current
Light, Energy and the Environment 2015 ?, ?()

(1 publications)

Journal article (non-refereed)

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Erratum: In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse (vol 31, 244002, 2020)
Nanotechnology 31, 34()

(1 publications)

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