Nanoscience and nanotechnology

We conducts extensive research into the design, growth and fabrication of semiconductor and optical devices on the nanometer scale using techniques ranging from MOCVD growth to ion beam processing. Such devices by virtue of their scale, exploit quantum effects to enhance their performance. A large part of this research program focuses on quantum well lasers and detectors of importance to the telecommunications industry.

We also research the nanoscale modification of bulk materials such as nanocrystals within semiconductors induced by ion irradiation. materials modified in this way can have unusual and technologically useful properties such as light emission at wavelengths incompatible with the bulk material band structure.

Nanotubes as their name suggests are microscopically small pipes of material such as carbon - like an elongated form of a "buckie ball". These have exciting properties such as unimaginably high tensile strengths and the School has an active research program on the efficient production of nanotubes by mechano chemistry.

Selected research highlights

Potential student research projects

You could be doing your own research into fusion and plasma confinement. Below are some examples of student physics research projects available in RSPE.

Please browse our full list of available physics research projects to find a project that interests you.

Developing nanoscale lasers with controlled direction of light emission for use in high density information processing.

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This project will address the recently emerged new platform for nanophotonics based on high-index dielectric nanoparticles that opened a whole new realm of all-dielectric resonant nanophotonics and meta-optics. High-permittivity nanoparticles exhibit strong interaction with light due to the excitation of electric and magnetic Mie-type resonances.

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This project aims to invent and apply quantum microscopes to solve major problems across science.

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Simplify nanowire solar cell fabrication by eliminating the need for p-n junctions to increase the ultimate device efficiency.

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Updated:  17 August 2017/ Responsible Officer:  Director, RSPE/ Page Contact:  Physics Webmaster